CN113265702A - Shoulder-placing method with controllable liquid gap distance - Google Patents

Shoulder-placing method with controllable liquid gap distance Download PDF

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Publication number
CN113265702A
CN113265702A CN202110553789.3A CN202110553789A CN113265702A CN 113265702 A CN113265702 A CN 113265702A CN 202110553789 A CN202110553789 A CN 202110553789A CN 113265702 A CN113265702 A CN 113265702A
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shouldering
crucible
preset
diameter
lifting speed
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梁万亮
丁亚国
马国忠
顾燕滨
河野贵之
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Ferrotec Ningxia Advanced Quartz Material Co Ltd
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Ferrotec Ningxia Advanced Quartz Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

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Abstract

The invention provides a shouldering method with controllable liquid gap distance, and belongs to the technical field of monocrystalline silicon. Through predetermineeing the shape of shouldering, predetermine the parameter of shouldering, carry out the operation of shouldering to rise CL to the crucible of shouldering the process1Adjusting to make crucible lifting speed CL0Equal to the measured crucible lifting speed CL1And + delta CL, after several times of adjustment, the obtained shouldering process is applied to the actual shouldering process, so that the liquid opening distance can be effectively controlled in the shouldering process, the manual intervention is reduced, the dependence degree of the shouldering process on the experience of operators is reduced, and the shouldering survival rate is improved.

Description

Shoulder-placing method with controllable liquid gap distance
Technical Field
The invention belongs to the technical field of monocrystalline silicon, and particularly relates to a shouldering method with controllable liquid gap distance.
Background
The process for producing the monocrystalline silicon by the Czochralski method (CZ method) mainly comprises the steps of charging, melting, seeding, shouldering, shoulder rotating, diameter equalizing, ending and the like, wherein the shouldering is a process of amplifying a thin neck to a target crystal pulling diameter after the seeding is finished, and is one of important processes for producing the monocrystalline silicon by the Czochralski method.
The traditional shouldering process adjusts shouldering parameters according to the temperature of crystal growth and the pull rate of actual crystal growth. For example, chinese patent No. 202010860262.0 discloses a large diameter single crystal silicon shouldering growth process by adjusting the SP value of the shouldering process (difference in shouldering temperature divided by difference in shouldering length). However, the liquid opening distance (the distance from the upper surface of the silicon solution in the quartz crucible to the bottom of the heat shield) in the shouldering process and at the beginning of the equal diameter process has a significant influence on the diameter process, in actual production, the liquid opening distance needs to be adjusted in the shouldering process according to process requirements, or the liquid opening distance is kept unchanged, or gradually reduced or gradually increased, the conventional shouldering process mostly depends on manual intervention for adjusting the liquid opening distance, the experience requirement on operators is high, and the shouldering survival rate is low.
Disclosure of Invention
In view of the above, the invention provides a shouldering method with controllable liquid port distance, which is used for obtaining an automatic shouldering process according to the process demand liquid port distance, reducing the dependence of the shouldering process on the experience of operators and improving the shouldering survival rate.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a shouldering method with controllable liquid gap distance comprises the following steps:
a. positioning the gap of the seeding liquid;
b. presetting a shouldering shape, and acquiring a theoretical shouldering diameter D corresponding to the preset shouldering length L according to the preset shouldering shape0And according to the theoretical shoulder-laying diameter D0Calculating a preset heel ratio R corresponding to the preset shouldering length L0；
c. According to the preset crucible heel ratio R0Shouldering;
d. in the shouldering process, the shouldering diameter D is measured intermittently1And according to the actual shoulder-laying diameter D1Calculating the current measured crucible lifting speed CL1；
e. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1+ Δ CL, where Δ CL is an adjustment factor introduced according to process requirements;
f. after shouldering is finished, obtaining the adjusted shouldering process, and adjusting the preset crucible heel ratio R according to the adjusted shouldering process0Correcting to obtain the corrected crucible heel ratio R0＇；
g. To correctThe rear crucible-to-heel ratio R0Taking the preset crucible-to-heel ratio, performing the next shouldering, and repeating the steps d-f until the theoretical crucible lifting speed CL0＝a(CL1+ Δ CL), where a is the allowable error coefficient;
h. obtaining the shouldering process after the last adjustment, and according to the shouldering process after the last adjustment and the preset crucible heel ratio R0Correcting to obtain the corrected preset crucible-to-heel ratio R0' as a shouldering method with controllable liquid gap for practical production.
Preferably, in step b, the predetermined shouldering length L is 5mm to 10 mm.
Preferably, in step e, an adjustment coefficient introduced according to the process requirement is calculated according to the formula Δ CL ═ Δ l/t, where Δ l represents a liquid gap distance variation value of the process requirement in time t;
when the process requires the liquid opening distance to be increased, delta l is greater than 0;
when the process requires that the distance between liquid ports is not changed, delta l is 0;
when the process requires the liquid gap to be reduced, delta l is less than 0.
Preferably, in step g, the allowable error coefficient is 0.98 ≦ a ≦ 1.02.
Preferably, in step c, "according to a predetermined crucible-to-heel ratio R0In the process of shouldering, when the inner diameter/shouldering diameter of the crucible is 9-10, the crucible is increased, and the crucible enters into the shoulder rotating process until the inner diameter/shouldering diameter of the crucible is 1.2-1.5.
Preferably, in step D, the "actual shouldering diameter D1Calculating the current measured crucible lift CL1"comprises the following steps:
d1. according to the formula R1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1；
d2. According to equation CL1＝R1·SL1Calculating the current measured crucible lift CL1；
Wherein SL1For the current crystal growth rate, ρsIs the silicon solid density, plThe density of the silicon liquid, d is the inner diameter of the quartz crucible.
According to the technical scheme, the invention provides a shouldering method with controllable liquid gap distance, which has the beneficial effects that: through predetermineeing the shape of shouldering, predetermine the parameter of shouldering, carry out the operation of shouldering to rise CL to the crucible of shouldering the process1Adjusting to make crucible lifting speed CL0Equal to the measured crucible lifting speed CL1And + delta CL, after several times of adjustment, the obtained shouldering process is applied to the actual shouldering process, so that the liquid opening distance (the distance from the upper surface of the silicon solution in the quartz crucible to the bottom of the heat shield) can be effectively controlled in the shouldering process, the manual intervention is reduced, the dependence degree of the shouldering process on the experience of operators is reduced, and the shouldering survival rate is improved.
Detailed Description
The technical solution and the technical effects of the present invention are further described in detail below.
In one embodiment, a shouldering method with controllable liquid gap distance comprises the following steps:
s11, positioning the gap of the seeding liquid.
And (4) positioning the distance between the seeding liquid ports, namely keeping the distance between the liquid ports to be approximately equal after seeding in each crystal pulling process. The distance between the liquid ports is fixed during seeding, the seeding temperature is close, the temperature is close when shouldering is carried out, and the shouldering shape difference caused by temperature difference among batches is avoided.
S12, presetting a shouldering shape, and acquiring a theoretical shouldering diameter D corresponding to the preset shouldering length L according to the preset shouldering shape0And according to the theoretical shoulder-laying diameter D0Calculating a preset crucible heel ratio R corresponding to the preset shouldering length L0。
Presetting the shape of the shoulder of the single crystal silicon after one shouldering is finished, such as the shouldering diameter D2The crucible is lifted when the crucible is lifted, the shouldering shape is preset according to the process requirement, and the predicted shouldering length is l1Left and right, shoulder diameter up to D3When the shoulder is put on, the shoulder is turned. In the process, the length of the shoulder is l2When left and right, the diameter of the shoulder is D4And the diameter is increased by delta D about every delta l increase of the shouldering length until the shouldering is finished.
Thus, the formula R can be usedi＝(Di/d)2·ρs·ρlCalculating different shouldering diameters D in the preset shouldering shapeiCorresponding crucible heel ratio RiAnd forming a preset shouldering control process.
Preferably, the predetermined shouldering length L is 5mm to 10mm, and in principle, the smaller the predetermined shouldering length is, the more precise the obtained shouldering process is, and the preset shouldering length L is preferably 5mm to 10mm in consideration of the actual adjustment process.
S13, according to a preset crucible heel ratio R0And (6) shouldering.
Setting a preset crucible heel ratio R of the single crystal furnace according to the preset shouldering control process formed in the step S120(notably: the preset crucible-to-heel ratio R0Comprising a set of different or identical Ri) Entering the shouldering process.
Preferably, when the inner diameter/shouldering diameter of the crucible is 9-10, the crucible is increased to enter the rotary shoulder until the inner diameter/shouldering diameter of the crucible is 1.2-1.5.
S14, in the shouldering process, intermittently measuring the shouldering diameter D1According to the shoulder-laying diameter D1Calculating the current measured crucible lifting speed CL1。
During the shouldering process, the practical shouldering diameter D is caused by the deviation of process control and other conditions1And a predetermined shoulder-laying diameter D0Deviation exists, and the actual shouldering diameter D is required to be adjusted due to the distance between liquid ports1And a predetermined shoulder-laying diameter D0Deviations must occur. At the moment, the actual shouldering diameter D is detected through a measuring eyepiece arranged on the crystal pulling furnace at a certain interval of time t or a certain shouldering length L1And according to the formula R1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1，SL1For the current crystal growth rate, ρsIs the silicon solid density, plThe density of the silicon liquid, d is the inner diameter of the quartz crucible.
S15, interfering the crucible lifting speed to ensure that the crucible lifting speed CL is equal0Equal to the measured crucible lifting speed CL1+ Δ CL, where Δ CL is an adjustment factor introduced according to process requirements.
When calculating and measuring the CL of crucible liter1Then, if the crucible lifting speed CL displayed on the furnace platform of the single crystal furnace at this time0And measuring crucible lifting speed CL1When the + delta CL has a difference, the crucible lifting speed is interfered, so that the crucible lifting speed CL is enabled to be higher0Equal to the measured crucible lifting speed CL1+ΔCL。
And the delta CL is an adjusting coefficient introduced according to the process requirement, and the adjusting coefficient delta CL introduced according to the process requirement is calculated according to the formula delta CL-delta l/t, wherein delta l represents a liquid port distance change value required by the process within the time t. Wherein when the process requires the liquid mouth distance to be increased, delta l is more than 0; when the process requires that the distance between liquid ports is not changed, delta l is 0; when the process requires the liquid gap to be reduced, delta l is less than 0.
S16, after shouldering is finished, obtaining an adjusted shouldering process, and adjusting the preset crucible heel ratio R according to the adjusted shouldering process0Correcting to obtain the corrected crucible heel ratio R0＇。
According to the method shown in step S15, adjustment is performed while shoulder-off is performed until shoulder-off is completed. After shouldering is finished, obtaining the corrected crucible heel ratio R from a furnace platform system of the single crystal furnace or according to records0＇。
S17, using the corrected crucible heel ratio R0Taking the crucible heel ratio as a preset crucible heel ratio, performing the next shouldering, and repeating the steps S14-S16 until the crucible lifting speed CL0＝a(CL1+ Δ CL), where a is the allowable error coefficient. Among them, the allowable error coefficient of 0.98. ltoreq. a.ltoreq.1.02 is preferable.
S18, obtaining the shouldering process after the last adjustment, and setting the crucible heel ratio R according to the shouldering process after the last adjustment0Correcting to obtain the corrected preset crucible-to-heel ratio R0' as a shouldering method with controllable liquid gap for practical production.
The technical scheme and technical effects of the invention are further explained by the specific examples below.
Example one
The process needs are as follows: in the shouldering process, the liquid opening distance is kept constant.
Taking a product phi 395mm drawn by a 26-inch quartz crucible as an example, the inner diameter of the quartz crucible is 635mm, the shouldering shape is preset according to the process requirements, and the shouldering length L is predicted0When the shoulder is placed at about 140mm, the diameter is 385mm, the shoulder is placed, and the shoulder is turned. At shoulder length L1When the shoulder-putting diameter is about 50mm, the shoulder-putting diameter is about 70mm, and then the diameter is increased by about 35mm when the shoulder-putting length is increased by 10mm until the shoulder-putting is finished. And according to the preset shouldering shape, calculating and acquiring a preset crucible-to-heel ratio R0. Preset shouldering shape and corresponding preset crucible heel ratio R0As shown in Table 1, wherein the preset crucible-to-heel ratio R0According to the formula Ri＝(Di/d)2·ρs·ρlIs calculated as rhosTaking 2.33g/cm3，ρlTaking 2.5g/cm3。
TABLE 1 Preset shouldering shape and Preset crucible heel ratio R0
Shoulder length/mm Shoulder diameter/mm Inner diameter/mm of crucible Presetting crucible heel ratio R0
40 / / 0.000
50 70 635 0.011
60 105 635 0.025
70 140 635 0.045
80 175 635 0.071
90 210 635 0.102
100 245 635 0.139
110 280 635 0.181
120 315 635 0.229
130 350 635 0.283
140 385 635 0.343
And carrying out a first crystal pulling process, and positioning the liquid opening distance after seeding is finished. After seeding is finished, according to the crucible heel ratio R shown in Table 10And (4) shoulder setting is carried out, and other necessary parameters in the shoulder setting process are carried out according to the conventional design. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 5mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1. The measurement and calculation results are shown in Table 2.
TABLE 2 measurement and calculation results of a first pull process of the examples
Figure DEST_PATH_IMAGE001
Figure BDA0003076394680000071
And (4) intervening the crucible lifting speed while shouldering according to the steps until shouldering is finished. After shouldering is finished, obtaining the corrected crucible heel ratio R0As shown in table 2.
The second crystal pulling was carried out with the corrected crucible heel ratio R shown in Table 2, maintaining the same seeding liquid gap0' carry out shouldering. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 5mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1. The measurement and calculation results are shown in Table 3.
TABLE 3 measurement and calculation results of a second pulling process of the examples
Figure DEST_PATH_IMAGE002
Figure BDA0003076394680000081
The procedure was repeated for a third pulling operation, and the results of the measurements and calculations are shown in Table 4.
TABLE 4 measurement and calculation results of the third pulling process of the examples
Figure DEST_PATH_IMAGE003
As can be seen from Table 4, the current crucible lifting speed CL is obtained during the third shouldering process0And measuring crucible lifting speed CL1Substantially equal, with an error within 2%, is acceptable.
Obtaining the corrected crucible heel ratio R after the third shouldering is finished0And including the corrected crucible heel ratio R0The internal process parameters are used as the shouldering method with controllable liquid gap for actual production.
The shouldering method with the controllable liquid gap distance is used for actual production, manual intervention is not performed, and the shouldering survival rate of continuous 30-furnace crystal pulling is 100%.
Under the same working condition, the traditional shouldering method is adopted, manual intervention is carried out by operators with 5 years of operation experience to control the liquid opening distance in the shouldering process, and the shouldering survival rate of continuous 30-furnace crystal pulling is 93.3%. And the shouldering survival rate of the continuous 30-furnace crystal pulling is 86.7 percent after the manual intervention of operators with 1-year operation experience.
Example two
The process needs are as follows: after the shouldering is finished, the liquid opening distance is increased by 5mm (within 100min, the growth interface stably rises by 5 mm).
Presetting shouldering shape and presetting crucible heel ratio R according to presetting shouldering shape0The same as the first embodiment.
And carrying out a first crystal pulling process, and positioning the liquid opening distance after seeding is finished. After seeding is finished, according to the crucible heel ratio R shown in Table 10And (4) shoulder setting is carried out, and other necessary parameters in the shoulder setting process are carried out according to the conventional design. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 10mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1-0.005 mm/min. The measurement and calculation results are shown in Table 2.
TABLE 5 results of measurement and calculation of the second first-time pulling procedure in the examples
Figure DEST_PATH_IMAGE004
Figure BDA0003076394680000101
According to the steps, the crucible is lifted up while shoulderingAnd (5) performing intervention until shouldering is finished. After shouldering is finished, obtaining the corrected crucible heel ratio R0As shown in table 2.
The second crystal pulling was carried out with the corrected crucible heel ratio R shown in Table 2, maintaining the same seeding liquid gap0' carry out shouldering. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 5mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1-0.005 mm/min. The measurement and calculation results are shown in Table 3.
TABLE 6 results of measurement and calculation of the second pull of the example
Figure DEST_PATH_IMAGE005
The procedure was repeated for a third pulling operation, and the results of the measurements and calculations are shown in Table 4.
TABLE 7 results of measurement and calculation of the second and third pulling process of the examples
Figure DEST_PATH_IMAGE006
Figure BDA0003076394680000111
As can be seen from Table 4, the current crucible lifting speed CL is obtained during the third shouldering process0And measuring crucible lifting speed CL1Substantially equal, with an error within 2%, is acceptable.
Obtaining the corrected crucible heel ratio R after the third shouldering is finished0And including the corrected crucible heel ratio R0The technological parameters ofThe shoulder-placing method with controllable liquid gap distance for actual production.
The shouldering method with the controllable liquid gap distance is used for actual production, manual intervention is not performed, and the shouldering survival rate of continuous 30-furnace crystal pulling is 100%.
Under the same working condition, the traditional shouldering method is adopted, manual intervention is carried out by operators with 5 years of operation experience to control the liquid opening distance in the shouldering process, and the shouldering survival rate of continuous 30-furnace crystal pulling is 93.3%. And the shouldering survival rate of the continuous 30-furnace crystal pulling is 86.7 percent after the manual intervention of operators with 1-year operation experience.
EXAMPLE III
The process needs are as follows: after the shouldering is finished, the liquid mouth distance is reduced by 5mm (within 100min, the growth interface is stably reduced by 5 mm).
Presetting shouldering shape and presetting crucible heel ratio R according to presetting shouldering shape0The same as the first embodiment.
And carrying out a first crystal pulling process, and positioning the liquid opening distance after seeding is finished. After seeding is finished, according to the crucible heel ratio R shown in Table 10And (4) shoulder setting is carried out, and other necessary parameters in the shoulder setting process are carried out according to the conventional design. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 5mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1+0.005 mm/min. The measurement and calculation results are shown in Table 2.
TABLE 8 results of measurement and calculation of the third first-time pulling procedure in example
Figure DEST_PATH_IMAGE007
And (4) intervening the crucible lifting speed while shouldering according to the steps until shouldering is finished. ShoulderingAfter the end, obtaining the corrected crucible heel ratio R0As shown in table 2.
The second crystal pulling was carried out with the corrected crucible heel ratio R shown in Table 2, maintaining the same seeding liquid gap0' carry out shouldering. In the shouldering process, the current shouldering diameter D is measured through an ocular lens of the crystal pulling furnace at the interval of 5mm1And calculating the formula R according to the formula1＝(D1/d)2·ρs·ρlCalculating the current crucible-to-heel ratio R1And further according to the formula CL1＝R1·SL1Calculating the current measured crucible lift CL1. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL0Equal to the measured crucible lifting speed CL1+0.005 mm/min. The measurement and calculation results are shown in Table 3.
TABLE 9 results of measurement and calculation of the third and second pulling process of the example
Figure BDA0003076394680000131
The procedure was repeated for a third pulling operation, and the results of the measurements and calculations are shown in Table 4.
TABLE 10 results of measurement and calculation of the third pull process of the example
Figure DEST_PATH_IMAGE008
As can be seen from Table 4, the current crucible lifting speed CL is obtained during the third shouldering process0And measuring crucible lifting speed CL1Substantially equal, with an error within 2%, is acceptable.
Obtaining the corrected crucible heel ratio R after the third shouldering is finished0And including the corrected crucible heel ratio R0The internal process parameters are used as the shouldering method with controllable liquid gap for actual production.
The shouldering method with the controllable liquid gap distance is used for actual production, manual intervention is not performed, and the shouldering survival rate of continuous 30-furnace crystal pulling is 100%.
Under the same working condition, the traditional shouldering method is adopted, manual intervention is carried out by operators with 5 years of operation experience to control the liquid opening distance in the shouldering process, and the shouldering survival rate of continuous 30-furnace crystal pulling is 93.3%. And the shouldering survival rate of the continuous 30-furnace crystal pulling is 86.7 percent after the manual intervention of operators with 1-year operation experience.
As can be seen from the first to third embodiments, in general, a shouldering process capable of automatically and stably controlling the shouldering liquid port distance according to process requirements can be obtained through 2-3 times of adjustment tests.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (6)

1. A shouldering method with controllable liquid gap distance is characterized by comprising the following steps:
a. positioning the gap of the seeding liquid;
b. presetting a shouldering shape, and acquiring a theoretical shouldering diameter D corresponding to the preset shouldering length L according to the preset shouldering shape0And according to the theoretical shoulder-laying diameter D0Calculating a preset heel ratio R corresponding to the preset shouldering length L0；
c. According to the preset crucible heel ratio R0Shouldering;
d. in the shouldering process, the shouldering diameter D is measured intermittently1And according to the actual shoulder-laying diameter D1Calculating the current measured crucible lifting speed CL1；
e. Interfering the crucible lifting speed to ensure that the crucible lifting speed CL of the current furnace platform0Equal to the measured crucible lifting speed CL1+ Δ CL, where Δ CL is an adjustment factor introduced according to process requirements;
f. after shouldering is finished, obtaining the adjusted shouldering process, and adjusting the preset crucible heel ratio R according to the adjusted shouldering process0Correcting to obtain the corrected crucible heel ratio R0＇；
g. With the corrected crucible heel ratio R0Taking the preset crucible-to-heel ratio, performing the next shouldering, and repeating the steps d-f until the theoretical crucible lifting speed CL0＝a(CL1+ Δ CL), where a is the allowable error coefficient;
h. obtaining the shouldering process after the last adjustment, and according to the shouldering process after the last adjustment and the preset crucible heel ratio R0Correcting to obtain the corrected preset crucible-to-heel ratio R0' as a shouldering method with controllable liquid gap for practical production.
2. The method for shouldering with controllable liquid gap distance according to claim 1, wherein in the step b, the preset shouldering length L is 5 mm-10 mm.
3. The shouldering method with controllable liquid opening distance according to claim 1, wherein in the step e, an adjusting coefficient introduced according to the process requirement is calculated according to the formula of- Δ l/t, wherein Δ l represents the liquid opening distance change value of the process requirement in the time t;
when the process requires the liquid opening distance to be increased, delta l is greater than 0;
when the process requires that the distance between liquid ports is not changed, delta l is 0;
when the process requires the liquid gap to be reduced, delta l is less than 0.
4. The shoulder-putting method with controllable liquid gap distance as claimed in claim 1, characterized in that in step g, the allowable error coefficient is 0.98 ≤ a ≤ 1.02.
5. The shouldering method with controllable liquid gap distance according to claim 1, wherein in the step c, the preset crucible heel ratio R is used as a basis0In the process of shouldering, when the inner diameter/shouldering diameter of the crucible is 9-10, the crucible is increased, and the crucible enters into the shoulder rotating process until the inner diameter/shouldering diameter of the crucible is 1.2-1.5.
6. The shouldering method with controllable liquid gap according to claim 1,characterized in that, in the step D, the step D is carried out according to the actual shouldering diameter D1Calculating the current measured crucible lift CL1"comprises the following steps:
d1. according to the formula R1＝(d/D1)2·ρs·ρlCalculating the current crucible-to-heel ratio R1；
d2. According to equation CL1＝R1·SL1Calculating the current measured crucible lift CL1(ii) a Wherein SL1The current crystal lifting speed is obtained.
CN202110553789.3A 2021-05-20 2021-05-20 Shoulder-placing method with controllable liquid gap distance Pending CN113265702A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537911A (en) * 2022-10-21 2022-12-30 成都东骏激光股份有限公司 Method and equipment for preparing large-size crystal by Czochralski method
CN116288663A (en) * 2023-05-18 2023-06-23 苏州晨晖智能设备有限公司 Equipment debugging method for improving distortion of monocrystalline silicon rod

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CN109234795A (en) * 2018-10-29 2019-01-18 上海新昇半导体科技有限公司 A kind of crystal growth control method, device, system and computer storage medium
CN111893563A (en) * 2020-08-25 2020-11-06 连城凯克斯科技有限公司 Single crystal furnace capable of automatically adjusting shouldering process parameters and control method
CN112323141A (en) * 2020-11-03 2021-02-05 上海新昇半导体科技有限公司 Single crystal growth method and single crystal growth apparatus

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CN109234795A (en) * 2018-10-29 2019-01-18 上海新昇半导体科技有限公司 A kind of crystal growth control method, device, system and computer storage medium
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CN115537911A (en) * 2022-10-21 2022-12-30 成都东骏激光股份有限公司 Method and equipment for preparing large-size crystal by Czochralski method
CN116288663A (en) * 2023-05-18 2023-06-23 苏州晨晖智能设备有限公司 Equipment debugging method for improving distortion of monocrystalline silicon rod

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