CN109234795A - A kind of crystal growth control method, device, system and computer storage medium - Google Patents
A kind of crystal growth control method, device, system and computer storage medium Download PDFInfo
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- CN109234795A CN109234795A CN201811330586.2A CN201811330586A CN109234795A CN 109234795 A CN109234795 A CN 109234795A CN 201811330586 A CN201811330586 A CN 201811330586A CN 109234795 A CN109234795 A CN 109234795A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The present invention provides a kind of crystal growth control method, device, system and computer storage medium for shouldering process, which comprises presets the setting value of the setting value of the crystal diameter changing value of shouldering process different phase, the setting value of shouldering length varying value and crystal growth technique parameter；The crystal diameter and shouldering length of shouldering process different phase are obtained, and calculates changing value；The ratio of crystal diameter changing value and shouldering length varying value is compared with the ratio of the setting value of crystal diameter changing value and the setting value of the shouldering length varying value, obtains difference, the input variable as pid algorithm；The regulated value that crystal growth technique parameter is calculated by pid algorithm, the output variable as pid algorithm；Regulated value is added with setting value, obtains the technological parameter of actual (tube) length crystalline substance process.It using method, apparatus of the invention, system and computer storage medium, is controlled to adjust using diameter change of the pid algorithm to shouldering process, overcomes thermal field minor change to influence, guarantee that the changing value of crystal diameter is consistent, improve repeatability and technology stability.
Description
Technical field
The present invention relates to field of crystal growth, in particular to a kind of crystal growth control method, device, system and meter
Calculation machine storage medium more particularly to it is a kind of for the crystal growth control method of shouldering process, device, system and computer store
Medium.
Background technique
Monocrystalline silicon is generally used for manufacture integrated circuit and other electronic components as a kind of semiconductor material.Preparing silicon
During monocrystalline, mainly by immersing diameter lesser seed crystal in silicon melt, it is thinner that one section of diameter is grown by seeding
Fine grain come dislocation is discharged with achieve the purpose that grow zero dislocation crystal.It later can be by shouldering process, so that crystal is by fine grain
It grows up to aimed dia, then obtains the crystal of required size by isodiametric growth.
Shouldering process is technical process more crucial during length is brilliant, is the basis for obtaining aimed dia crystal.Currently,
The main method used is that drop pulling rate is used to increase crystal diameter constantly to reach mesh with the method that cooling degree combines
Mark diameter.The change of pulling rate and temperature is mainly determined by shouldering time started or shouldering length during shouldering
Change, so needing to match the pulling rate and temperature of different phase in shouldering technical process.But in actual (tube) length crystalline substance process
In using time, seeding temperature, heater life etc. can have some difference when every vice-minister's crystalline substance due to thermal field, so such as
Fruit can not adjust temperature and pulling rate setting in time and will lead to shouldering process and lose crystal structure.In addition, different crystal growing conditions
Variation also result in the difference of shouldering technique, cause shouldering to become a part the most difficult in crystal growing technology development process,
The trial for needing to carry out many times can just find suitable temperature and pulling rate setting.It is simultaneously also that long brilliant process is most difficult to control
A part, so that each shouldering is all reached consistent extremely difficult.
The present invention provides a kind of store for the crystal growth control method of shouldering process, device, system and computer and is situated between
Matter, to solve the above technical problems.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention provides a kind of crystal growth control method for shouldering process, which comprises presets and puts
The setting value of the crystal diameter changing value of shoulder process different phase, the setting value of shouldering length varying value and the shouldering process are not
With the setting value of the crystal growth technique parameter in stage；The crystal diameter of the shouldering process different phase is obtained, and calculates institute
State the changing value of crystal diameter；The shouldering length of the shouldering process different phase is obtained, and calculates the change of the shouldering length
Change value；By the ratio of the changing value of the crystal diameter and the changing value of the shouldering length and the crystal diameter changing value
The ratio of the setting value of the changing value of setting value and the shouldering length is compared, and obtains difference, and take the difference as
The input variable of pid algorithm；The regulated value that crystal growth technique parameter is calculated by pid algorithm, the output as pid algorithm become
Amount；The regulated value of the crystal growth technique parameter is added with the setting value of the crystal growth technique parameter, obtains reality
The technological parameter of long crystalline substance process.
Further, the crystal growth technique parameter of the shouldering process includes pulling rate and/or temperature.
Further, the shouldering process different phase includes at different shouldering times or different crystal length.
Further, the crystal diameter of the shouldering process different phase is obtained by diameter measuring device.
Further, the shouldering length of the shouldering process different phase is obtained by shouldering length-measuring appliance.
The present invention also provides a kind of crystal growth control devices for shouldering process, and described device includes: to preset
Module, the setting value of the crystal diameter changing value for presetting shouldering process different phase, shouldering length varying value are set
The setting value of the crystal growth technique parameter of definite value and the shouldering process different phase；Diameter measuring device, for obtaining
The crystal diameter of shouldering process different phase is stated, and calculates the changing value of the crystal diameter；Shouldering length-measuring appliance, is used for
The shouldering length of the shouldering process different phase is obtained, and calculates the changing value of the shouldering length；Comparison module, being used for will
The setting value of the ratio of the changing value of the crystal diameter and the changing value of the shouldering length and the crystal diameter changing value
It is compared with the ratio of the setting value of the changing value of the shouldering length, obtains difference；Pid control module, being used for will be described
Input variable of the difference as the pid control module, and by pid algorithm calculate crystal growth technique parameter regulated value,
Output variable as the pid control module；Technological parameter setup module, by the regulated value of the crystal growth technique parameter
It is added with the setting value of the crystal growth technique parameter, obtains the technological parameter of actual (tube) length crystalline substance process.
Further, the crystal growth technique parameter of the shouldering process includes pulling rate and/or temperature.
Further, the shouldering process different phase includes at different shouldering times or different crystal length.
The present invention also provides a kind of crystal growth control system for shouldering process, including memory, processor and deposit
The computer program run on the memory and on the processor is stored up, the processor executes the computer program
The step of Shi Shixian above method.
The present invention also provides a kind of computer storage mediums, are stored thereon with computer program, which is characterized in that the meter
The step of above method is realized when calculation machine program is computer-executed.
In conclusion crystal growth control method, device, system and the computer according to the present invention for shouldering process
Storage medium is controlled to adjust using diameter change of the pid algorithm to shouldering process, by finely tuning crystal growth technique parameter
The crystal diameter variation for controlling shouldering process, overcomes influence of the thermal field minor change to shouldering process, so that grow every time
The repeatability of crystal shape and brilliant shoulder shape is high, guarantees that the changing value of shouldering process crystal diameter is consistent, improves shouldering technique
The stability of repeatability and technique is that the stability of entire crystal growing technology and repeatability establish basis, makes to grow every time
Crystal quality is consistent, to guarantee the consistency of each shouldering diameter and the variation of shouldering length, and then guarantees different batches
The stabilization of crystal growth quality.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the schematic diagram of long crystal furnace used in crystal growth control method provided by the embodiment of the present invention；
Fig. 2 shows the signals of crystal growth control method monocrystalline silicon crystal bar obtained provided by the embodiment of the present invention
Figure；
Fig. 3 shows the main technique stream of the crystal growth control method according to an embodiment of the present invention for shouldering process
Journey schematic diagram；
Fig. 4 shows the schematic diagram of the crystal growth control method according to an embodiment of the present invention for shouldering process；
Fig. 5 shows the schematic block diagram of the crystal growth control device for shouldering process of the embodiment of the present invention；
Fig. 6 shows the schematic block diagram of the crystal growth control system for shouldering process of the embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
The crystal growth control method for shouldering process.Obviously, execution of the invention is not limited to the technology of semiconductor field
The specific details that personnel are familiar with.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiments.
It should be understood that when the term " comprising " and/or " including " is used in this specification, indicating described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or their combination.
Fig. 1 shows the schematic diagram of long crystal furnace used in crystal growth control method provided by the embodiment of the present invention,
As shown in Figure 1, the long crystal furnace is used to use Grown by CZ Method silicon single crystal, including furnace body 101, heating dress is equipped in furnace body 101
It sets and pulling apparatus.Heating device includes silica crucible 102, graphite crucible 103, heater 104.Wherein, silica crucible 102 is used
In holding silicon material, such as polysilicon.Silicon material is heated to be silicon melt 105 wherein.Graphite crucible 103 is wrapped in silica crucible
102 outside, for providing support to silica crucible 102 during heating, graphite crucible 103 is arranged in heater 104
Outside.Heat shielding 106 is provided with above silica crucible 102, the heat shielding 106 has downwardly extending circular 107 growth district of silicon single crystal
Back taper screen shape object, the direct hot spoke for the monocrystalline silicon crystal bars 107 that heater 104 and 105 pairs of high temperature silicon melt can be blocked to grow
It penetrates, reduces the temperature of monocrystalline silicon crystal bar 107.Meanwhile heat shielding can also make under blow protection gas concentration be directly sprayed onto growth interface
Near, further enhance the heat dissipation of monocrystalline silicon crystal bar 107.Thermal insulation material, such as carbon felt are additionally provided on 101 side wall of furnace body.
Pulling apparatus includes the seed shaft 108 being vertically arranged and crucible axis 109, and seed shaft 108 is arranged in silica crucible 102
Top, the bottom of graphite crucible 103 is arranged in crucible axis 109, and the bottom of seed shaft 108 is equipped with seed crystal by fixture,
Top connects seed crystal axial brake device, can Xiang Shang while rotating and slowly lift.The bottom of crucible axis 109 is equipped with earthenware
Crucible axial brake device makes crucible axis 109 be able to drive crucible and is rotated.
When carrying out crystal growth, silicon material is launched in silica crucible 102 first, long crystal furnace is then switched off and vacuumizes,
Protective gas is filled in long crystal furnace.Illustratively, the protective gas is nitrogen, and purity is 97% or more, and pressure is
0.05Mpa, flow 70L/min.Then, heater 104 is opened, 1420 DEG C of fusion temperature or more is heated to, silicon material is made to exist
Silicon melt 105 is all molten into 20min.
Then, seed crystal is immersed in silicon melt 105, drive seed crystal to rotate by seed shaft 108 and slowly lifted, so that silicon
Atom is monocrystalline silicon crystal bar 107 along seeded growth.The seed crystal is the silicon single crystal cutting by certain crystal orientation or drills through, and is commonly used
Crystal orientation be<100>,<111>,<110>,<511>etc., the seed crystal is generally cylindrical body or cuboid.Monocrystalline silicon crystal bar 107
Long brilliant process successively include seeding, shouldering, turn shoulder, isometrical and ending several stages.
Specifically, the seeding stage is carried out first.I.e. after silicon melt 105 is stabilized to certain temperature, seed crystal immersion silicon is melted
In body, seed crystal is promoted with certain pulling rate, makes thin neck of the silicon atom along seeded growth certain diameter, until thin neck reaches
To predetermined length.The main function of the seeding process is to eliminate the dislocation for causing monocrystalline silicon to be formed because of thermal shock and lack
It falls into, is arranged in order on the silicon solid of solid liquid interface using the degree of supercooling driving silicon atom of crystallization front, forms monocrystalline silicon.Show
Example property, the pulling rate is 1.5mm/min-2.5mm/min, and thin neck length degree is 1.2-1.4 times of boule diameter, and thin neck diameter is
5-7mm。
Then, into the shouldering stage, after thin neck reaches predetermined length, slow down the speed that the seed crystal lifts upwards,
It is decreased slightly as the temperature of low silicon melt simultaneously, carrying out cooling is the cross growth in order to promote the monocrystalline silicon, even if the monocrystalline silicon
Enlarged diameter, which is known as the shouldering stage, as shown in Fig. 2, the stage is formed by the shouldering section that taper crystal bar is crystal bar.
Then, into turning the shoulder stage.When the diameter of monocrystalline silicon increases to aimed dia, by improving heater 104
Heating power, increases the temperature of silicon melt, while adjusting speed, the speed of rotation and quartzy earthenware that the seed crystal lifts upwards
The rotation speed etc. of crucible, inhibits the cross growth of the monocrystalline silicon, promotes its longitudinal growth, makes the intimate equal diameter of the monocrystalline silicon
Growth.
Then, into the isometrical stage.After monocrystalline silicon crystal bar diameter reaches predetermined value, into the isometrical stage, such as Fig. 2 institute
Show, which is formed by isometrical section that cylindrical crystal bar is crystal bar.Specifically, crucible temperature, pulling rate, crucible is adjusted to turn
Speed and crystal rotation stablize growth rate, remain unchanged crystal diameter, until crystal pulling finishes.Isometrical process is monocrystalline silicon
The Main Stage of growth, up to number growth in even more than 100 hours tens hours.
Finally, into finishing phase.When ending, accelerates to promote rate, raise simultaneously the temperature of silicon melt 105, make crystal bar
Diameter gradually becomes smaller, and forms a cone, when cone is sufficiently small, it eventually leaves liquid level.It will complete the crystal bar of ending
It is taken out after rising to furnace chamber cooling a period of time, that is, completes a growth cycle.
In several stages of the long brilliant process of monocrystalline silicon, the shouldering stage is technical process more crucial during length is brilliant,
It is the basis for obtaining aimed dia crystal.Currently, the main method used is combined using drop pulling rate with cooling degree
Method increases crystal diameter constantly to reach aimed dia.Mainly pass through the shouldering time started during shouldering or puts
Shoulder length degree determines the variation of pulling rate and temperature, so need to match the crystal pulling of different phase in shouldering technical process
Speed and temperature.But since thermal field uses time, seeding temperature, heater life etc. in every vice-minister during actual (tube) length crystalline substance
There can be some difference when brilliant, so if can not adjust temperature and pulling rate setting in time will lead to shouldering process and lose
Remove crystal structure.In addition, the variation of different crystal growing conditions also results in the difference of shouldering technique, shouldering is caused to become crystal growing technology
A part the most difficult in development process, the trial for needing to carry out many times just can find suitable temperature and pulling rate is set
It is fixed.Simultaneously it is also long brilliant process a part most rambunctious, each shouldering is made all to reach consistent extremely difficult.
Presence in view of the above problems, the invention proposes a kind of crystal growth control methods for shouldering process, such as
Shown in Fig. 3 comprising following key step:
In step S301, setting value, the shouldering for presetting the crystal diameter changing value of shouldering process different phase are long
Spend the setting value of the setting value of changing value and the crystal growth technique parameter of the shouldering process different phase；
In step s 302, the crystal diameter of the shouldering process different phase is obtained, and calculates the crystal diameter
Changing value；
In step S303, the shouldering length of the shouldering process different phase is obtained, and calculates the shouldering length
Changing value；
In step s 304, by the ratio of the changing value of the crystal diameter and the changing value of the shouldering length with it is described
The ratio of the setting value of crystal diameter changing value and the setting value of the shouldering length varying value is compared, and obtains difference, and
Take the difference as the input variable of pid algorithm；
In step S305, the regulated value of crystal growth technique parameter is calculated by pid algorithm, as the defeated of pid algorithm
Variable out；
In step S306, by setting for the regulated value of the crystal growth technique parameter and the crystal growth technique parameter
Definite value is added, and the technological parameter of actual (tube) length crystalline substance process is obtained, so that it is consistent to guarantee that each shouldering diameter changes with shouldering length
Property, and then guarantee the stabilization of different batches crystal growth quality.
Illustratively, crystal growth control method according to an embodiment of the present invention can be with memory and processor
It is realized in unit or system.
Wherein, the crystal growth technique parameter of the shouldering process includes pulling rate and/or temperature.
Further, the shouldering process different phase includes at different shouldering times or different crystal length.
Specifically, it in step S301, presets at the different shouldering times or different crystal length of shouldering process
The setting value of crystal diameter changing value, the setting value of shouldering length varying value, the setting value of pulling rate and/or the setting of temperature
Value.
In step s 302, the crystal obtained at the different shouldering times or different crystal length of the shouldering process is straight
Diameter, and calculate the changing value of the crystal diameter.
In the present invention, by diameter measuring device obtain the shouldering process the different shouldering times or different crystal it is long
Crystal diameter at degree.Using in CCD (Charge coupled Device, charge coupled cell) camera acquisition long crystal furnace
The image of the three-phase intersection of monocrystalline silicon crystal bar 107 and silicon melt 105, then handles image using computer, obtains
The diameter of monocrystalline silicon crystal bar 107 simultaneously feeds back to control system and controls long crystalline substance.Specifically, during crystal growth,
Bright ring is generated due to the release of latent heat at the solid liquid interface of monocrystalline silicon crystal bar 107 and silicon melt 105.Described in CCD camera obtains
The picture signal of bright ring, and signal is sent to computer system after analog-to-digital conversion, by the image in computer system
Reason program handles crystal growth image, to obtain the measurement diameter of monocrystalline silicon crystal bar 107.As an example, according to CCD phase
The method of the measurement diameter for the image signal acquisition monocrystalline silicon crystal bar 107 that machine obtains includes: that image processing program extracts solid-liquid circle
Bright ring at face is to obtain crystal profile；Crystal profile is fitted, oval boundary is obtained；Oval boundary is corrected into circle
Boundary；Take up an official post in circular boundary and take three pixels, its coordinate value is substituted into circle coordinates formula respectively, constitutive equation and is asked
Solution, can be calculated the diameter of central coordinate of circle and crystal.
In step S303, the shouldering length of the shouldering process different phase is obtained, and calculates the shouldering length
Changing value.
In the present invention, the shouldering length of the shouldering process different phase is obtained by shouldering length-measuring appliance.
In step s 304, by the ratio of the changing value of the crystal diameter and the changing value of the shouldering length with it is described
The ratio of the setting value of the changing value of the setting value of the changing value of crystal diameter and the shouldering length is compared, and obtains difference
Value, and take the difference as the input variable of pid algorithm.
It should be noted that changing value and its setting value (setting of the crystal diameter changing value of the crystal diameter
Value) and the changing value and its setting value of shouldering length be value in the same phase of shouldering process, i.e., in the identical shouldering time
Value, or the value at identical crystal length.
In step S305, the regulated value of pulling rate and/or the regulated value of temperature are calculated by pid algorithm, as PID
The output variable of algorithm.
Wherein, the pid algorithm is controlled according to the ratio (P) of deviation, integral (I), differential (D).Ratio controls energy
Reflection error rapidly, to reduce error, but ratio control cannot eliminate steady-state error, the increasing of proportional gain can cause system
It is unstable；The effect of integration control is, as long as system, there are error, integral control action constantly accumulates, output control
Amount to eliminate error, as long as therefore have time enough, integration control will completely eliminate error, but integral action by force can very much
System overshoot is increased, or even vibrates system；Differential control can reduce overshoot, overcomes oscillation, makes the steady of system
Qualitative raising, while accelerating the dynamic responding speed of system, reduce adjustment time, so as to improve the dynamic property of system.
Finally, the regulated value of pulling rate is added with the setting value of pulling rate, obtains actual (tube) length in step S306
The pulling rate of brilliant process；The regulated value of temperature is added with the setting value of temperature, obtains the temperature of actual (tube) length crystalline substance process.
Fig. 4 shows the schematic diagram of the crystal growth control method for shouldering process of the invention, as shown in figure 4, PID
The input of algorithm be crystal diameter changing value and shouldering length changing value ratio and crystal diameter variation setting value and
The difference of the ratio of the setting value of shouldering length varying value；The output of pid algorithm is the regulated value of pulling rate and the tune of temperature
The regulated value of pulling rate is added with the setting value of pulling rate, obtains practical pulling rate, by the regulated value of temperature by section value
It is added with the setting value of temperature, obtains actual temperature.
Crystal growth control method according to the present invention for shouldering process is long by the changing value of crystal diameter and shouldering
The ratio of the changing value of degree and the ratio of the setting value of crystal diameter changing value and the setting value of shouldering length varying value are compared
Input variable of the difference relatively obtained as pid algorithm calculates the regulated value of crystal growth technique parameter by pid algorithm, makees
It for the output variable of pid algorithm, is controlled to adjust using diameter change of the pid algorithm to shouldering process, by finely tuning crystal
Growthing process parameter controls the crystal diameter variation of shouldering process, overcomes influence of the thermal field minor change to shouldering process, so that
The repeatability of the crystal shape and brilliant shoulder shape that grow every time is high, guarantees that the changing value of shouldering process crystal diameter is consistent, mentions
The repeatability of high shouldering technique and the stability of technique are that the stability of entire crystal growing technology and repeatability establish basis, make
The crystal quality grown every time is consistent.
As shown in figure 5, the crystal growth control device 500 according to an embodiment of the present invention for shouldering process includes preparatory
Setup module 501, diameter measuring device 502, shouldering length-measuring appliance 503, comparison module 504,505 and of pid control module
Technological parameter setup module 506.
Module 501 is preset, the setting value of the crystal diameter changing value for presetting shouldering process different phase,
The setting value of the crystal growth technique parameter of the setting value of shouldering length varying value and the shouldering process different phase；
Diameter measuring device 502 for obtaining the crystal diameter of the shouldering process different phase, and calculates the crystal
The changing value of diameter；
Shouldering length-measuring appliance 503, for obtaining the shouldering length of the shouldering process different phase, and described in calculating
The changing value of shouldering length；
Comparison module 504, for by the ratio of the changing value of the crystal diameter and the changing value of the shouldering length with
The ratio of the setting value of the changing value of the setting value of the crystal diameter changing value and the shouldering length is compared, and obtains difference
Value；
Pid control module 505 for taking the difference as the input variable of the pid control module, and passes through PID
Algorithm calculates the regulated value of crystal growth technique parameter, the output variable as the pid control module；
Technological parameter setup module 506, by the regulated value and the crystal growth technique of the crystal growth technique parameter
The setting value of parameter is added, and obtains the technological parameter of actual (tube) length crystalline substance process.
Wherein, the crystal growth technique parameter of the shouldering process includes pulling rate and/or temperature.Preset module
501 preset the setting value of the crystal diameter changing value at the different shouldering times or different crystal length of shouldering process, put
The setting value of the setting value of shoulder length varying value, the setting value of pulling rate and/or temperature；Pid control module 505 is by the ratio
Through input variable of difference comparison as the pid control module compared with module 504, and passes through pid algorithm meter
Calculate the regulated value of pulling rate and/or the regulated value of temperature, the output variable as the pid control module；Technological parameter is set
It sets module 506 and is added the regulated value of the pulling rate with the setting value of the pulling rate, obtain actual (tube) length crystalline substance process
The regulated value of the temperature is added with the setting value of the temperature, obtains the temperature of actual (tube) length crystalline substance process by pulling rate.
Further, the shouldering process different phase includes at different shouldering times or different crystal length.The crystalline substance
The changing value and its setting value (setting value of the crystal diameter changing value) of body diameter and the changing value of shouldering length and its
Setting value is the value in the same phase of shouldering process, i.e. the value in the identical shouldering time, or in identical crystal length
The value at place.
Illustratively, the diameter measuring device 502 is CCD camera.Utilize monocrystalline silicon wafer in CCD camera acquisition long crystal furnace
The image of the three-phase intersection of stick 107 and silicon melt 105, then handles image using computer, obtains monocrystalline silicon wafer
The diameter of stick 107 simultaneously feeds back to control system and controls long crystalline substance.Specifically, during crystal growth, in monocrystalline silicon wafer
Bright ring is generated due to the release of latent heat at the solid liquid interface of stick 107 and silicon melt 105.CCD camera obtains the figure of the bright ring
As signal, and signal is sent to computer system after analog-to-digital conversion, by the image processing program pair in computer system
Crystal growth image is handled, to obtain the measurement diameter of monocrystalline silicon crystal bar 107.As an example, obtained according to CCD camera
The method of the measurement diameter of image signal acquisition monocrystalline silicon crystal bar 107 includes: bright at image processing program extraction solid liquid interface
Ring is to obtain crystal profile；Crystal profile is fitted, oval boundary is obtained；Oval boundary is corrected into circular boundary；?
Circular boundary, which is taken up an official post, takes three pixels, respectively substitutes into circle coordinates formula its coordinate value, constitutive equation and solves
The diameter of central coordinate of circle and crystal is calculated
Fig. 6 shows the schematic of the crystal growth control system 600 according to an embodiment of the present invention for shouldering process
Block diagram.Crystal growth control system 600 includes memory 610 and processor 620.
The storage of memory 610 controls for realizing the crystal growth according to an embodiment of the present invention for shouldering process
The program code of corresponding steps in method.
The processor 620 is real according to the present invention to execute for running the program code stored in the memory 610
The corresponding steps of the crystal growth control method for shouldering process of example are applied, and for realizing according to an embodiment of the present invention
It is surveyed for preset module 501, diameter measuring device 502, the shouldering length in the crystal growth control device of shouldering process
Measure device 503, comparison module 504, pid control module 505 and technological parameter setup module 506.
In one embodiment, it is executed when said program code is run by the processor 620 above-mentioned for shouldering
The crystal growth control method of process.
In addition, according to embodiments of the present invention, additionally providing a kind of storage medium, storing program on said storage
Instruction, when described program instruction is run by computer or processor for execute the embodiment of the present invention for shouldering process
The corresponding steps of crystal growth control method, and it is raw for realizing the crystal according to an embodiment of the present invention for shouldering process
Corresponding module in long control device.The storage medium for example may include the storage unit of tablet computer, personal computer
Hard disk, read-only memory (ROM), Erasable Programmable Read Only Memory EPROM (EPROM), portable compact disc read-only memory
(CD-ROM)), any combination of USB storage or above-mentioned storage medium.The computer readable storage medium can be one
Any combination of a or multiple computer readable storage mediums, such as a computer readable storage medium include for randomly
The computer-readable program code of action command sequence is generated, another computer readable storage medium includes for being used
In the computer-readable program code that the crystal growth of shouldering process controls.
In one embodiment, the computer program instructions may be implemented real according to the present invention when being run by computer
Each functional module of the crystal growth control device for shouldering process of example is applied, and/or can be executed according to this hair
The crystal growth control method for shouldering process of bright embodiment.
In one embodiment, the computer program instructions executed when being run by computer more than for shouldering process
Crystal growth control method.
In conclusion crystal growth control method, device, system and the computer according to the present invention for shouldering process
Storage medium is controlled to adjust using diameter change of the pid algorithm to shouldering process, by finely tuning crystal growth technique parameter
The crystal diameter variation for controlling shouldering process, overcomes influence of the thermal field minor change to shouldering process, so that grow every time
The repeatability of crystal shape and brilliant shoulder shape is high, guarantees that the changing value of shouldering process crystal diameter is consistent, improves shouldering technique
The stability of repeatability and technique is that the stability of entire crystal growing technology and repeatability establish basis, makes to grow every time
Crystal quality is consistent.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of crystal growth control method for shouldering process, which comprises the following steps:
Preset the setting value of the crystal diameter changing value of shouldering process different phase, the setting value of shouldering length varying value and
The setting value of the crystal growth technique parameter of the shouldering process different phase；
The crystal diameter of the shouldering process different phase is obtained, and calculates the changing value of the crystal diameter；
The shouldering length of the shouldering process different phase is obtained, and calculates the changing value of the shouldering length；
By the ratio of the changing value of the crystal diameter and the changing value of the shouldering length and the crystal diameter changing value
The ratio of setting value and the setting value of the shouldering length varying value is compared, and obtains difference, and take the difference as PID
The input variable of algorithm；
The regulated value that crystal growth technique parameter is calculated by pid algorithm, the output variable as pid algorithm；
The regulated value of the crystal growth technique parameter is added with the setting value of the crystal growth technique parameter, obtains reality
The technological parameter of long crystalline substance process.
2. the method according to claim 1, wherein the crystal growth technique parameter of the shouldering process includes drawing
Brilliant speed and/or temperature.
3. the method according to claim 1, wherein the shouldering process different phase includes the different shouldering times
Or at different crystal length.
4. the method according to claim 1, wherein the crystal diameter of the shouldering process different phase passes through directly
Calipers obtain.
5. the method according to claim 1, wherein the shouldering length of the shouldering process different phase is by putting
Shoulder length-measuring appliance obtains.
6. a kind of crystal growth control device for shouldering process, which is characterized in that described device includes:
Module is preset, the setting value of the crystal diameter changing value for presetting shouldering process different phase, shouldering are long
Spend the setting value of the setting value of changing value and the crystal growth technique parameter of the shouldering process different phase；
Diameter measuring device for obtaining the crystal diameter of the shouldering process different phase, and calculates the crystal diameter
Changing value；
Shouldering length-measuring appliance, for obtaining the shouldering length of the shouldering process different phase, and it is long to calculate the shouldering
The changing value of degree；
Comparison module, for by the ratio of the changing value of the crystal diameter and the changing value of the shouldering length and the crystal
The ratio of the setting value of the changing value of the setting value of diameter increm ent and the shouldering length is compared, and obtains difference；
Pid control module is calculated for taking the difference as the input variable of the pid control module, and by pid algorithm
The regulated value of crystal growth technique parameter, the output variable as the pid control module；
Technological parameter setup module, by setting for the regulated value of the crystal growth technique parameter and the crystal growth technique parameter
Definite value is added, and obtains the technological parameter of actual (tube) length crystalline substance process.
7. crystal growth control device according to claim 6, which is characterized in that the crystal growth work of the shouldering process
Skill parameter includes pulling rate and/or temperature.
8. crystal growth control device according to claim 6, which is characterized in that the shouldering process different phase includes
At different shouldering times or different crystal length.
9. a kind of crystal growth control system for shouldering process, including memory, processor and it is stored in the memory
Computer program that is upper and running on the processor, which is characterized in that when the processor executes the computer program
The step of realizing any one of claims 1 to 5 the method.
10. a kind of computer storage medium, is stored thereon with computer program, which is characterized in that the computer program is counted
The step of calculation machine realizes any one of claims 1 to 5 the method when executing.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811330586.2A CN109234795A (en) | 2018-10-29 | 2018-11-08 | A kind of crystal growth control method, device, system and computer storage medium |
| TW108121630A TW202018132A (en) | 2018-10-29 | 2019-06-21 | Control method, device and system for growing crystal and computer storage medium |
| US16/676,408 US20200149186A1 (en) | 2018-11-08 | 2019-11-06 | Method, device, system, and computer storage medium for crystal growing control |
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| CN2018112723885 | 2018-10-29 | ||
| CN201811272388 | 2018-10-29 | ||
| CN201811330586.2A CN109234795A (en) | 2018-10-29 | 2018-11-08 | A kind of crystal growth control method, device, system and computer storage medium |
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| CN109234795A true CN109234795A (en) | 2019-01-18 |
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| CN201811330586.2A Pending CN109234795A (en) | 2018-10-29 | 2018-11-08 | A kind of crystal growth control method, device, system and computer storage medium |
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| TW (1) | TW202018132A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111690980A (en) * | 2019-03-11 | 2020-09-22 | 上海新昇半导体科技有限公司 | Crystal growth control method, device and system for shouldering process and computer storage medium |
| CN112048761A (en) * | 2020-08-24 | 2020-12-08 | 有研半导体材料有限公司 | Large-diameter monocrystalline silicon shouldering growth process |
| CN112064109A (en) * | 2020-07-23 | 2020-12-11 | 南京晶能半导体科技有限公司 | Control method for crystal growth shouldering shape of semiconductor silicon material crystal |
| CN112789371A (en) * | 2021-01-11 | 2021-05-11 | 眉山博雅新材料有限公司 | Crystal growth control method and system |
| CN113122912A (en) * | 2021-04-25 | 2021-07-16 | 弘元新材料(包头)有限公司 | Large-size silicon single crystal furnace pressure-changing and shoulder-setting survival rate improving device |
| CN113265702A (en) * | 2021-05-20 | 2021-08-17 | 宁夏富乐德石英材料有限公司 | Shoulder-placing method with controllable liquid gap distance |
| CN113308730A (en) * | 2020-02-26 | 2021-08-27 | 隆基绿能科技股份有限公司 | Feeding control method and system for continuous crystal growth |
| CN113445120A (en) * | 2021-06-28 | 2021-09-28 | 无锡松瓷机电有限公司 | Monocrystalline silicon growth control method, device, equipment and computer storage medium |
| CN113684533A (en) * | 2021-08-18 | 2021-11-23 | 包头美科硅能源有限公司 | Large-size single crystal shouldering method capable of preventing edge breakage |
| CN114318512A (en) * | 2021-12-28 | 2022-04-12 | 山东有研半导体材料有限公司 | Method for automatically adjusting pulling speed by monitoring diameter of rotary shoulder of czochralski silicon |
| CN114752996A (en) * | 2022-03-22 | 2022-07-15 | 无锡海纳智能科技有限公司 | Intelligent adjustment method for monocrystalline silicon shoulder-laying stage forking and storage medium |
| CN114959882A (en) * | 2021-02-26 | 2022-08-30 | 晶科能源股份有限公司 | Method for manufacturing silicon single crystal, electronic device, and storage medium |
| CN115477304A (en) * | 2022-09-27 | 2022-12-16 | 新特能源股份有限公司 | Reduction furnace regulation and control method, device and related equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111690980A (en) * | 2019-03-11 | 2020-09-22 | 上海新昇半导体科技有限公司 | Crystal growth control method, device and system for shouldering process and computer storage medium |
| CN113308730A (en) * | 2020-02-26 | 2021-08-27 | 隆基绿能科技股份有限公司 | Feeding control method and system for continuous crystal growth |
| CN112064109A (en) * | 2020-07-23 | 2020-12-11 | 南京晶能半导体科技有限公司 | Control method for crystal growth shouldering shape of semiconductor silicon material crystal |
| CN112048761A (en) * | 2020-08-24 | 2020-12-08 | 有研半导体材料有限公司 | Large-diameter monocrystalline silicon shouldering growth process |
| CN112048761B (en) * | 2020-08-24 | 2022-02-15 | 有研半导体硅材料股份公司 | Large-diameter monocrystalline silicon shouldering growth process |
| CN112789371A (en) * | 2021-01-11 | 2021-05-11 | 眉山博雅新材料有限公司 | Crystal growth control method and system |
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| CN114959882A (en) * | 2021-02-26 | 2022-08-30 | 晶科能源股份有限公司 | Method for manufacturing silicon single crystal, electronic device, and storage medium |
| CN114959882B (en) * | 2021-02-26 | 2023-07-21 | 晶科能源股份有限公司 | Method for producing monocrystalline silicon, electronic device, and storage medium |
| CN113122912A (en) * | 2021-04-25 | 2021-07-16 | 弘元新材料(包头)有限公司 | Large-size silicon single crystal furnace pressure-changing and shoulder-setting survival rate improving device |
| CN113265702A (en) * | 2021-05-20 | 2021-08-17 | 宁夏富乐德石英材料有限公司 | Shoulder-placing method with controllable liquid gap distance |
| CN113445120A (en) * | 2021-06-28 | 2021-09-28 | 无锡松瓷机电有限公司 | Monocrystalline silicon growth control method, device, equipment and computer storage medium |
| CN113684533A (en) * | 2021-08-18 | 2021-11-23 | 包头美科硅能源有限公司 | Large-size single crystal shouldering method capable of preventing edge breakage |
| CN114318512A (en) * | 2021-12-28 | 2022-04-12 | 山东有研半导体材料有限公司 | Method for automatically adjusting pulling speed by monitoring diameter of rotary shoulder of czochralski silicon |
| CN114318512B (en) * | 2021-12-28 | 2023-11-24 | 山东有研半导体材料有限公司 | Method for automatically adjusting pulling speed by monitoring diameter of straight pulling monocrystalline silicon shoulder |
| CN114752996A (en) * | 2022-03-22 | 2022-07-15 | 无锡海纳智能科技有限公司 | Intelligent adjustment method for monocrystalline silicon shoulder-laying stage forking and storage medium |
| CN114752996B (en) * | 2022-03-22 | 2024-05-31 | 无锡海纳智能科技有限公司 | Intelligent adjustment method for shoulder-stage splitting of monocrystalline silicon and storage medium |
| CN115477304A (en) * | 2022-09-27 | 2022-12-16 | 新特能源股份有限公司 | Reduction furnace regulation and control method, device and related equipment |
| CN115477304B (en) * | 2022-09-27 | 2023-08-22 | 新特能源股份有限公司 | Reducing furnace regulation and control method and device and related equipment |
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