JP2013159525A - Method for manufacturing silicon single crystal and device for manufacturing silicon single crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon single crystal and a device for manufacturing the silicon single crystal that can grow the silicon single crystal while performing diameter control with high precision by suitably correcting a heater temperature.SOLUTION: In a method for manufacturing silicon single crystal including steps of: detecting the diameter of the silicon single crystal being lifted by a diameter detection section 1, correcting a heater temperature by temperature correction operation means 3A on the basis of the detected diameter, and lifting the silicon single crystal while controlling the diameter when manufacturing the silicon single crystal by heating and lifting seed crystal from a melt by a Czochralski method, a diameter variation determination section 5 determines whether variation factor in detected diameter is caused by a disturbance for correction of the heater temperature. When it is determined that the variation is caused by a disturbance, temperature correction operation means 3B for disturbance different from the temperature correction operation means 3A corrects the heater temperature and the silicon single crystal is lifted while having its diameter controlled.

Description

  The present invention relates to a silicon single crystal manufacturing method and a manufacturing apparatus for pulling up a silicon single crystal while controlling a variation in diameter by the Czochralski method.

  In recent years, since the integration degree of LSI MOS type highly integrated semiconductor elements has been increased and the gate oxide film has been thinned, there is a strong demand for improvement in the dielectric strength characteristics of the gate oxide film. However, it is known that a silicon single crystal manufactured by the Czochralski method (CZ method) has a minute defect (Grown-in defect). Adversely affects device characteristics.

  In order to solve the problem due to this Grown-in defect, Patent Document 1 proposes a method of growing a silicon single crystal at a low speed of 0.8 mm / min or less. However, a wafer obtained from a silicon single crystal grown at a low speed also has grown-in defects such as infrared scattering defects, OSF rings, and dislocation clusters, and the defect-free region is limited in the wafer plane. . In addition, it is not preferable to grow a single crystal at a low speed because the productivity is lowered.

Therefore, Patent Document 2 proposes a method for manufacturing a silicon single crystal wafer having no grown-in defects over the entire surface. In this method, when the pulling rate is V (mm / min) and the average value of the temperature gradient in the crystal in the pulling axis direction in the temperature range from the silicon melting point to 1300 ° C. is G (° C./mm), V This is a manufacturing method in which a silicon single crystal is grown by controlling the / G value within a predetermined range.
In the present invention, by controlling the V / G value, it is possible to produce a silicon single crystal that is defect-free over the entire cross section, or to generate or disappear at a position aimed at the OSF ring. Become. That is, if the single crystal can be grown with the temperature gradient G being constant in the specific growth furnace and the pulling speed V being constant, a defect-free silicon single crystal on the entire surface or a silicon single crystal in which the position of the OSF ring is controlled can be manufactured.

On the other hand, when growing a silicon single crystal, it is also important from the standpoint of manufacturing yield when manufacturing a wafer to suppress the fluctuation of the diameter of the single crystal to be grown and to grow it while controlling it at a desired diameter. Become. As a method for controlling the diameter of the single crystal, there is a diameter control method in which the diameter of the single crystal to be grown is controlled by a pulling speed and a heater supply power (heater temperature, hereinafter simply referred to as temperature) (patent) Reference 3).
In such a diameter control method, when the pulling-up speed is changed, there is a rapid effect and the diameter can be changed immediately, whereas when the heater temperature is changed, the effect is slow to appear. . As described above, due to the effect of the increase / decrease in the heater temperature, it takes a long time for the diameter of the single crystal to increase / decrease because the temperature of the melt changes due to the change in the heater temperature, This is because it takes time to conduct.

  For this reason, if the diameter is controlled only by the heater temperature so that the pulling speed is kept constant without changing at all and the diameter is controlled only by the heater temperature, it becomes difficult to grow the target diameter. For this reason, the control method of the supplied power is not to change the power supplied to the heater according to the detected diameter, but mainly to control the diameter of the single crystal to be grown by changing the pulling speed according to the detected diameter. However, a method of controlling the supply power in accordance with the change in the pulling speed is used.

As described above, when the diameter of a single crystal to be grown is controlled by changing the pulling speed according to the detected diameter, the pulling speed change has a rapid effect and the diameter can be changed immediately. . However, even if the detected diameter changes slightly, the pulling speed changes correspondingly, so that the pulling speed cannot be controlled within a certain range.
Therefore, Patent Document 4 proposes a method of suppressing the fluctuation of the diameter of the single crystal and controlling the V / G value within a certain narrow range.

JP-A-2-267195 JP-A-8-330316 Japanese Examined Patent Publication No. 7-74117 JP-A-2001-316199

In Patent Document 4, the V / G value is controlled by limiting the feedback amount to the pulling speed according to the detected diameter to an extremely narrow range of ± 0.01 to 0.05 mm / min. Therefore, in order to control the diameter of the single crystal by the pulling speed, the heater temperature correction amount is calculated by comparing the pulling speed control value before the span restriction with the set pulling speed, and the heater temperature setting Has been proposed to control the diameter of the silicon single crystal.
By this method, it became possible to grow a single crystal to a target diameter mainly by controlling the power supplied to the heater regardless of the pulling speed.

However, in the production of a single crystal that is pulled up using this method, there may occur a case where the diameter fluctuation becomes large with a certain probability. It has a relatively large change in heater temperature, which takes time to increase and decrease in diameter, compared to a change in pulling speed that is effective for increasing and decreasing the diameter in controlling the diameter of a single crystal. It depends on what you are doing.
That is, in the above method, it is necessary to set a large control amount of the heater temperature in order to accelerate the diameter increase / decrease effect due to the change of the heater temperature. However, if the control amount is set too large, appropriate control can be maintained if the diameter fluctuation is small, but once the diameter change becomes large, the control amount becomes too large and the diameter within a certain range. May be in a hunting state where unevenness is repeated, or the diameter control may fail. Further, if the control amount is set too small, appropriate control can be maintained even for a large diameter change. However, if the diameter change is small, fluctuations in the diameter with a long cycle may not be suppressed.

  The present invention has been made in view of the above problems, and by appropriately correcting the heater temperature, a silicon single crystal manufacturing method capable of growing a silicon single crystal while controlling the diameter with high accuracy, and An object is to provide a manufacturing apparatus.

  In order to achieve the above object, the present invention provides a silicon single crystal that is being pulled when the silicon single crystal is produced by heating with a heater and pulling up a seed crystal from a melt by the Czochralski method. In the method for producing a silicon single crystal, wherein the diameter of the crystal is detected, the heater temperature is corrected by temperature correction calculation means based on the detected diameter, and the diameter of the silicon single crystal is controlled and pulled up. In the correction, it is determined whether the variation factor of the detected diameter is a disturbance, and if it is determined that the disturbance is a disturbance, the heater temperature is corrected by a disturbance temperature correction calculation unit different from the temperature correction calculation unit, Provided is a method for producing a silicon single crystal characterized by pulling up while controlling the diameter of the silicon single crystal.

  In this way, it is determined whether the variation factor of the detected diameter is a disturbance, and the heater temperature is corrected by the normal temperature correction calculation unit and the disturbance temperature correction calculation unit, so that the excessive heater temperature with respect to the diameter variation due to the disturbance Since the correction can be suppressed and the heater temperature can be appropriately corrected for both large and small diameter fluctuations, the diameter can be controlled with high accuracy. Therefore, the diameter control width by the pulling speed can be reduced, and the desired crystal quality can be easily obtained. As described above, a silicon single crystal having excellent crystallinity and diameter uniformity can be manufactured with high yield.

At this time, it is preferable that the disturbance temperature correction calculation unit calculates a correction amount smaller than the correction amount of the heater temperature calculated by the temperature correction calculation unit when the detected diameter is the same.
With such disturbance temperature correction calculation means, it is possible to appropriately correct the heater temperature without calculating an excessive correction amount with respect to sudden diameter fluctuations due to disturbance.

At this time, the determination of whether the variation factor of the detected diameter is a disturbance is made based on whether the absolute value of the difference between the detected diameter and the target diameter is a certain value or more, and the detected diameter of the detected diameter at a certain time immediately before the detected diameter. It is preferable to determine that the disturbance is present when the absolute value of the difference from the average value corresponds to at least one of a certain value or more.
By determining in this way, it can be accurately and easily determined whether the variation factor of the detected diameter is disturbance.

  The present invention is also an apparatus for producing a silicon single crystal by heating with a heater and pulling up a seed crystal from a melt by the Czochralski method, and detecting the diameter of the silicon single crystal being pulled. A diameter detecting unit that determines whether the variation factor of the detected diameter by the diameter detecting unit is a disturbance, and the diameter variation determining unit determines that the disturbance is not a disturbance. A heater temperature correction unit that corrects the heater temperature by a disturbance temperature correction calculation unit different from the temperature correction calculation unit when the temperature correction calculation unit corrects the heater temperature and the diameter variation determination unit determines disturbance. When the diameter variation determining unit determines that the variation factor of the detected diameter is not a disturbance, the temperature correction calculating unit corrects the heater temperature, and the diameter variation determining unit When it is determined that the fluctuation factor is disturbance, the heater temperature is corrected by the disturbance temperature correction calculation means, and the diameter is increased while controlling the diameter of the silicon single crystal. An apparatus for producing a silicon single crystal is provided.

  With such an apparatus, it is possible to perform diameter control by appropriate heater temperature correction for both large diameter fluctuation and small diameter fluctuation. Therefore, the diameter control width by the pulling speed can be reduced, and the desired crystal quality can be easily obtained. From the above, an apparatus capable of producing a silicon single crystal excellent in crystallinity and diameter uniformity is obtained.

In this case, it is preferable that the disturbance temperature correction calculation unit calculates a correction amount smaller than the heater temperature correction amount calculated by the temperature correction calculation unit when the detected diameters are the same.
With such disturbance temperature correction calculation means, it becomes a device that can appropriately correct the heater temperature without calculating an excessive correction amount against sudden diameter fluctuations due to disturbance.

At this time, the diameter variation determination unit is configured such that the absolute value of the difference between the detected diameter and the target diameter is a certain value or more, and the absolute value of the difference between the detected diameter and the average value of the detected diameters for a certain time immediately before the detection. Preferably, it is determined that the disturbance is a disturbance when at least one of the values falls within a certain value.
Such a diameter variation determination unit is an apparatus that can accurately and easily determine whether the variation factor of the detected diameter is a disturbance.

  As described above, according to the present invention, a silicon single crystal having excellent crystallinity and excellent uniformity in diameter is produced by efficiently controlling the heater temperature and suppressing the diameter fluctuation of the silicon single crystal. Can be manufactured with good performance.

It is the schematic of an example of the manufacturing apparatus of the silicon single crystal of this invention. It is a flow figure at the time of controlling the diameter of a silicon single crystal in the present invention. It is a flowchart at the time of diameter control of the conventional silicon single crystal.

  Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.

  FIG. 1 shows a schematic view of an example of an apparatus for producing a silicon single crystal according to the present invention. The silicon single crystal manufacturing apparatus 10 has a main chamber 11 having a neck portion 12 formed at the top thereof. A pull chamber (not shown) and a pulling mechanism (not shown) are provided above the neck portion 12 of the main chamber 11 via a gate valve portion 13.

  Inside the main chamber 11, a quartz crucible 15 fitted to a graphite crucible 20 is installed via a support shaft 14. A heater 18 for melting the raw material silicon polycrystal is provided so as to surround the quartz crucible 15, and a heat insulating material 19 is provided between the heater 18 and the inner wall of the main chamber 11. In order to have an in-furnace structure around the heater 18 and around the hot zone formed above the silicon melt 16 such that the average value G of the temperature gradient in the crystal in the pull-up axis direction becomes a desired value. In some cases, a sub-heater may be provided.

  In addition, pulling means 22 for pulling up the silicon single crystal 24 is suspended from the pull chamber so as to freely rotate up and down. In the illustrated example, a seed crystal 23 is attached to the tip of the pulling means 22. The pulling means 22 may be one using a shaft or one using a flexible means such as a wire.

In the window provided on the shoulder portion of the main chamber 11, a diameter detecting means 21 for imaging the crystal growth interface 17 is arranged in order to detect the diameter of the silicon single crystal 24. As this diameter detection means 21, for example, a CCD camera can be used.
Then, as shown in FIGS. 2A and 2B, the diameter detector 1 that detects the diameter of the silicon single crystal 24 being pulled up from the image captured by the diameter detector 21, and the diameter detector 1 When the diameter variation determining unit 5 determines whether the variation factor of the detected diameter is disturbance, and when the diameter variation determining unit 5 determines that it is not disturbance, the temperature correction calculation unit 3A determines the heater temperature based on the detected diameter. When the correction is performed and the diameter fluctuation determination unit 5 determines that the disturbance is present, the heater temperature correction unit 3 is provided that corrects the heater temperature using a disturbance temperature correction calculation unit 3B different from the temperature correction calculation unit 3A.

For example, the following manufacturing method of the present invention can be carried out using the single crystal manufacturing apparatus 10 of the present invention as described above.
For example, the raw material silicon polycrystalline housed in the quartz crucible 15 is heated and melted by the heater 18 to form the melt 16. Then, the seed crystal 23 is immersed in the melt 16 and pulled up while the silicon single crystal 24 is grown by the pulling means 22. At this time, the silicon single crystal 24 is pulled up to have a desired diameter and a desired defect region while controlling the pulling speed and the heater output.

In the apparatus 10 of the present invention, the diameter of the silicon single crystal 24 is controlled by feeding back the single crystal diameter obtained by the diameter detecting means 21 to the pulling speed and the heater temperature.
The single crystal diameter control flow in the silicon single crystal production of the present invention will be described below.

  First, the diameter detector 21 images the vicinity of the crystal growth interface 17 between the melt 16 and the silicon single crystal 24, and the diameter detector 1 detects the diameter of the growing silicon single crystal 24. At this time, in the diameter detection unit 1, correction is made based on the distance between the crystal growth interface 17 in the quartz crucible 15 and the diameter detection means 21, and the luminous ring having the highest luminous intensity in the region observed by the diameter detection means 21. The diameter of the part is calculated, and the diameter of the growing single crystal is calculated (the solidification heat is dissipated when solidifying from the melt to the silicon single crystal, and the luminous intensity is the highest, so the luminous intensity is the highest. The ring is the diameter of the growing single crystal).

  Then, the diameter control calculation means compares the detected diameter detected by the diameter detection unit 1 with the set diameter, performs the diameter control calculation, and calculates the difference between the diameter of the actually grown single crystal and the set diameter. Extract.

The diameter variation determining unit 5 determines whether the current factor of the diameter variation is a disturbance based on the diameter of the single crystal obtained by the diameter detecting unit 1 and the diameter control calculating means.
The criterion is that the absolute value of the diameter deviation (difference between the detected diameter and the target diameter) is a certain value or more is determined as a disturbance. In this case, for example, the fixed value as a reference can be set to a value of 1.5 mm or more.

Alternatively, it is determined that the absolute value of the diameter change rate (the difference between the average diameter value for a certain time immediately before detection and the detected (current) diameter value) is a certain value or more is a disturbance. In this case, for example, the reference fixed value can be set to a value of 0.2 mm / min or more.
Further, the disturbance may be determined by a combination of a diameter deviation (difference between a detected diameter and a target diameter) and a diameter change rate (difference between an average diameter value and a detected diameter value for a certain time immediately before detection).

  Since the diameter variation due to the disturbance has a difference from the target diameter and the rate of change larger than the normal variation, the diameter variation due to the disturbance can be efficiently and accurately determined by making the above determination.

  At this time, when the diameter fluctuation determining unit 5 determines that the diameter fluctuation is normal (not the fluctuation due to disturbance), as shown in FIG. 2A, the temperature correction calculation means (normal time) 3A is used. Then, an output for correction is calculated, a basic value based on the crystal length from the basic temperature pattern calculation means 2 is added, and appropriate control of the heater temperature is continued with the heater temperature setting output 4.

On the other hand, when the diameter variation determining unit 5 determines that the diameter variation factor is disturbance, as shown in FIG. 2B, the disturbance temperature correction calculation means (at the time of disturbance) 3B is used for correction. The output is calculated, the basic value based on the crystal length from the basic temperature pattern calculating means 2 is added, and the heater temperature is controlled by the heater temperature setting output 4.
In this way, by using different calculation means during disturbance and during normal time, it is possible to suppress the correction of the heater temperature excessively and perform accurate diameter control.

Preferably, the disturbance temperature correction calculation means calculates a correction amount smaller than the heater temperature correction amount calculated by the temperature correction calculation means when the detected diameter is the same.
In this way, during disturbance, the heater temperature setting output is only a small change by calculating the correction amount (control amount) smaller than normal at the same detected diameter (same diameter fluctuation), so hunting is repeated with uneven diameters. The failure of state and diameter control can be effectively prevented.

In this way, the disturbance temperature correction calculation unit 3B that calculates the correction amount smaller than normal is calculated by multiplying the calculation formula of the temperature correction calculation unit 3A by a predetermined ratio (0 to 1), for example. The correction amount may be reduced, or the value of each term (proportional term P, differential term D, integral term I) in PID control may be set so that the correction amount is small. Alternatively, the disturbance temperature correction calculation unit 3B may perform no correction at all (correction amount = 0).
Further, the set values in the temperature correction calculation means 3A and the disturbance temperature correction calculation means 3B are not limited to one set, and for example, a plurality of sets can be set for the straight body length (crystal length).

  In addition, the determination of the diameter variation factor by the diameter variation determination unit 5 can be performed all the time during the pulling of the single crystal, or can be performed at regular time intervals.

  According to the present invention as described above, in the method of setting the diameter of the silicon single crystal within the target range by the heater temperature correction calculation, the diameter control characteristics of the single crystal to be manufactured can be improved as compared with the conventional method and apparatus. Therefore, there is little variation in diameter, and a single crystal having almost the same target diameter can be produced. Therefore, it is possible to reduce the loss of single crystal due to diameter variation (loss that occurs when grinding the surface in a cylindrical shape according to the product standard diameter), and to reduce quality defects due to diameter variation, etc. Can be improved.

  In the above, as an example of manufacturing a silicon single crystal according to the present invention, an example of manufacturing a silicon single crystal while controlling V / G has been mainly described. However, the present invention is not limited to this, Even when the silicon single crystal is pulled in the range of fluctuations in the pulling rate, it can be applied. The Czochralski method used in the present invention includes the MCZ method in which a magnetic field is applied.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
Example 1
With the single crystal manufacturing apparatus of the present invention as shown in FIG. 1, a silicon crucible having a diameter of 12 inches (300 mm), an axial orientation of <100>, and a conductivity type of P type is converted into a quartz crucible having a diameter of 36 inches (914 mm). It was grown from the melt contained in. In order to control the OSF ring of the cross-section of the single crystal to be grown to a target position so that no detectable Grown-in defects exist over the entire surface of the single crystal cross-section, The pulling speed V was controlled in the range of ± 0.01 mm / min according to the distribution G, and the heat history that the single crystal received in the furnace was kept constant.

As shown in FIGS. 2 (a) and 2 (b), the diameter of the single crystal is controlled by determining whether the variation factor of the diameter is a disturbance or not by the heater temperature correction unit 3. This was performed while correcting the heater temperature by calculating the heater temperature correction amount by switching between the temperature correction calculating means 3A and the disturbance temperature correction calculating means 3B.
At this time, it was determined at 15 minute intervals whether the disturbance was caused by the diameter fluctuation determining unit 5. Further, if the absolute value of the diameter deviation (difference between the detected diameter and the target diameter) is 1.5 mm or more, it is determined as a disturbance, and in the case of a disturbance, the disturbance temperature correction calculation unit 3B does not perform any correction (correction). Amount = 0). Table 1 shows the diameter control status of the single crystal after production.

  As shown in Table 1, in the silicon single crystal manufactured in Example 1, the region of large diameter variation (greater than the target value ± 2 mm) in the entire length of the straight body (product) is 6.7%, and the diameter variation The middle area (± 1 mm or more and ± 2 mm or less of the target value) was 40.0%, and the area of small diameter fluctuation (less than ± 1 mm of the target value) was 53.3%. Moreover, the target crystal quality was obtained over the entire length of the straight body (product).

(Example 2)
In the same manner as in Example 1, a silicon single crystal was manufactured, and the diameter fluctuation determination unit 5 determined whether or not the disturbance was an interval of 15 minutes. However, in Example 2, the absolute value of the diameter deviation (difference between the detected diameter and the target diameter) is 1.0 mm or more, and the absolute value of the diameter change rate (difference between the average diameter value and the current diameter value for a certain period of time immediately before). Was determined to be a disturbance. In the case of disturbance, the disturbance temperature correction calculation means 3B sets the proportional term P in the PID control to ½ of the normal time (temperature correction calculation means 3A) (differential term D = 0, integral term I = 0). ), And corrected. Table 1 shows the diameter control status of the single crystal after production.

  As shown in Table 1, the silicon single crystal manufactured in Example 2 has a diameter variation of 3.3% in the entire length of the straight body (product) (larger than the target value ± 2 mm), and the diameter variation. The area of medium (± 1 mm or more ± 2 mm or less of the target value) is 23.3%, the area of small diameter fluctuation (less than ± 1 mm of the target value) is 73.4%, and the area of small diameter fluctuation is further improved. . Moreover, the target crystal quality was obtained over the entire length of the straight body (product).

(Comparative example)
A silicon single crystal was produced in the same manner as in Example 1. However, as shown in FIG. 3, the diameter control is performed by a conventional method in which the heater temperature correction is performed by only one temperature correction calculation unit without performing the diameter fluctuation determination. Table 1 shows the diameter control status of the single crystal after production.

  From Table 1, the silicon single crystal produced in the comparative example has a diameter variation of 16.7% in the entire length of the straight body (product) (greater than ± 2 mm of the target value), and the diameter is changing (target value). The region of ± 1 mm or more and ± 2 mm or less) was 56.7%, and the region of small diameter fluctuation (less than the target value ± 1 mm) was 26.6%. In addition, some Grown-in defects were observed in the region of large diameter fluctuation.

  As described above, the uniformity of the diameter of the silicon single crystal is improved by determining the disturbance as in the present invention and performing the diameter control by performing the heater temperature correction even with the disturbance temperature correction calculation means different from the normal time. It was found that a single crystal having excellent crystal quality can be produced.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Diameter detection part, 2 ... Basic temperature pattern calculation means, 3 ... Heater temperature correction | amendment part,
3A ... temperature correction calculation means, 3B ... disturbance temperature correction calculation means,
4 ... Heater temperature setting output, 5 ... Diameter variation judgment part,
DESCRIPTION OF SYMBOLS 10 ... Manufacturing apparatus of a silicon single crystal, 11 ... Main chamber, 12 ... Neck part,
13 ... Gate valve part, 14 ... Support shaft, 15 ... Quartz crucible, 16 ... Melt,
17 ... Crystal growth interface, 18 ... Heater, 19 ... Insulating material, 20 ... Graphite crucible,
21 ... Diameter detection means, 22 ... Lifting means, 23 ... Seed crystal,
24: Silicon single crystal.

Claims (6)

In the Czochralski method, when producing a silicon single crystal by heating with a heater and pulling a seed crystal from the melt, the diameter of the silicon single crystal being pulled is detected, and the detected diameter is based on the detected diameter. In the method of manufacturing a silicon single crystal, the temperature of the silicon single crystal is raised while controlling the diameter of the silicon single crystal by correcting the heater temperature with a temperature correction calculation means.
In the correction of the heater temperature, it is determined whether the variation factor of the detected diameter is a disturbance. If it is determined that the disturbance is a disturbance, the heater temperature is corrected by a disturbance temperature correction calculation unit different from the temperature correction calculation unit. A method for producing a silicon single crystal, wherein the silicon single crystal is pulled while being controlled in diameter.   2. The disturbance temperature correction calculation unit calculates a correction amount smaller than the heater temperature correction amount calculated by the temperature correction calculation unit when the detected diameter is the same. The manufacturing method of the silicon single crystal of description.   The determination of whether the variation factor of the detected diameter is a disturbance is an absolute value of the difference between the detected diameter and the target diameter is a certain value or more, and an average value of the detected diameter and a detected diameter for a certain time immediately before detection 3. The method for producing a silicon single crystal according to claim 1, wherein a disturbance is determined when the absolute value of the difference between the two corresponds to at least one of a certain value or more. 4. An apparatus for producing a silicon single crystal by heating a Czochralski method with a heater and pulling a seed crystal from the melt,
A diameter detection unit that detects the diameter of the silicon single crystal being pulled, a diameter variation determination unit that determines whether the variation factor of the detected diameter by the diameter detection unit is a disturbance, and the diameter variation determination unit is not a disturbance If it is determined that the temperature of the heater is corrected by the temperature correction calculation means based on the detected diameter, and if the disturbance is determined by the diameter fluctuation determination unit, the temperature correction calculation means for disturbance different from the temperature correction calculation means And a heater temperature correction unit that corrects the heater temperature.
When the diameter variation determining unit determines that the variation factor of the detected diameter is not disturbance, the temperature correction calculating unit corrects the heater temperature, and the diameter variation determining unit is the disturbance factor of the detected diameter. If it is determined, the temperature of the heater is corrected by the disturbance temperature correction calculation means, and the silicon single crystal is pulled up while controlling the diameter of the silicon single crystal.   5. The disturbance temperature correction calculation means calculates a correction amount smaller than the heater temperature correction amount calculated by the temperature correction calculation means when the detected diameters are the same. The manufacturing apparatus of the silicon single crystal of description.   The diameter variation determining unit is configured such that an absolute value of a difference between the detected diameter and a target diameter is a certain value or more, and an absolute value of a difference between the detected diameter and an average value of the detected diameters for a certain time immediately before the detection is a constant value. 6. The apparatus for producing a silicon single crystal according to claim 4, wherein the apparatus is judged to be a disturbance when at least one of the above is satisfied.

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