WO2001018830A1 - Condensateur en couche mince - Google Patents

Condensateur en couche mince Download PDF

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Publication number
WO2001018830A1
WO2001018830A1 PCT/EP2000/008319 EP0008319W WO0118830A1 WO 2001018830 A1 WO2001018830 A1 WO 2001018830A1 EP 0008319 W EP0008319 W EP 0008319W WO 0118830 A1 WO0118830 A1 WO 0118830A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin
film capacitor
individual layers
substrate
layer
Prior art date
Application number
PCT/EP2000/008319
Other languages
German (de)
English (en)
Inventor
Roland Slowak
Susanne Hoffmann
Ralf Liedtke
Rainer Waser
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Publication of WO2001018830A1 publication Critical patent/WO2001018830A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Definitions

  • the present invention relates to a thin film capacitor, in particular for use in electrical and microelectronic circuits.
  • Thin-film capacitors are very often required in electrical and microelectronic circuits as passive components for diverse applications. For example, they are used for filtering, decoupling, stabilizing DC voltage supplies, etc. In addition to high capacitance values and low losses, a low temperature dependence of the dielectric constant ⁇ r (T) is required for most applications.
  • Ceramic multilayer thin-film capacitors are currently used as discrete components for these fields of application, which have been generally known for many years. As shown in FIG. 6, for example, these capacitors have a ceramic composite 10 produced by lamination, in which metallic inner electrode layers 11 are embedded. These metallic inner electrode layers 11 are alternately connected to head contacts 12, so that n-1 plate capacitors are formed in the case of n inner electrode layers and are connected in parallel. In this way, extraordinarily high capacity densities achieved, due to a large number of individual capacitors, a small electrode spacing, which is currently around 10 ⁇ m, and dielectric ceramics with high dielectric constants, which depending on the type of capacitor can be over 10,000, but only in connection with poor temperature characteristics.
  • ceramics from the mixed crystal series Sr (Ti 3 Zr) 0 3 (STZ), tiger phases from the BaO-Ti0 2 system , phases of the material systems ZrO 2 - TiO 2 -Sn0 2 (ZTS) and materials from the system Nd 2 0 3 -BaO-Ti0 2 (NBT) are used.
  • the almost temperature-independent dielectric constant of these systems have values up to about 100.
  • BaTi0 3 has relatively high values of the dielectric constant in the ferroelectric range below the Curie point T c . Only in a very small temperature interval is there a relatively flat temperature profile. An expansion of the flat temperature characteristic is only possible if two or more ferroelectric phases exist side by side in the ceramic, which must not mix with one another.
  • Such multilayer capacitors are manufactured using powder-based dispersions, which are drawn out to form green foils, and by screen printing techniques for the metal electrodes.
  • the manufacturing temperatures for the standard pen are here above 1000 ° C.
  • the dimensions for multilayer capacitors are approximately 0.5 x 1.0 x 0.5 mm 3 .
  • the known discrete ceramic multilayer capacitors with a flat ⁇ r (T) characteristic have the disadvantage that the dielectric layer thickness cannot be easily reduced to less than 1 ⁇ m with the aid of powder-based ceramic techniques. Furthermore, the components cannot be integrated with the usual techniques of semiconductor manufacturing on semiconductor chips, since the films and screen printing technology are in no way compatible with the semiconductor technologies. Furthermore, the conventional powder-based processes with multiphase, ie heterogeneous ferroelectric materials in thin film technology cannot be used for integrated capacitors.
  • the object of the present invention is therefore to create a thin-film capacitor which has a flat ⁇ r (T) characteristic, ie a temperature-stable dielectric constant, and which can be produced using thin-film processes in semiconductor technology.
  • T flat ⁇ r
  • a thin-film capacitor with a substrate, an oxide ceramic layer arranged thereon, which consists of a plurality of function-graded individual layers made of at least two materials of high dielectric, and an electrode arrangement which is arranged on the substrate opposite side of the oxide ceramic layer is provided.
  • the object is achieved by a thin-film capacitor with a substrate which carries a bottom electrode, an oxide ceramic layer arranged thereon, which has a plurality of function-graded individual layers made of at least two materials of high dielectric and which contacts the bottom electrode, and an electrode which is on the substrate opposite side of the oxide ceramic layer is provided.
  • the invention is therefore based on the consideration of providing individual layers between the substrate and the electrodes which form a multiplicity of plate capacitors which are connected in parallel or in series by the selected electrode arrangement.
  • the parallel connection of the individual layers is realized by the deposition of interdigital electrodes on the oxide-ceramic layer, the oxide-ceramic layer being deposited on an electrically insulating substrate.
  • the series connection of the individual layers is achieved by the deposition of the oxide ceramic layer over a base electrode on a semiconductor substrate and the deposition of an electrode on the layer.
  • the bottom electrode serves as the back electrode of the capacitor structure.
  • the individual layers each consist of at least two materials with the desired high dielectric constant, the individual layers being functionally graded, ie the material composition of the individual layers changes.
  • the die- Electricity number ⁇ r of the individual layers each show different temperature dependency characteristics. Because the individual layers are connected in parallel or in series, their curves of dielectric are superimposed as a function of the temperature, with the result that the dielectric constant of the oxide-ceramic thin layer composed of the function-graded individual layers is not very temperature-dependent, ie the oxide-ceramic thin layer is a flat ⁇ r (T) characteristic.
  • Suitable materials for the individual layers of the oxide-ceramic thin layer are, for example, strontium titanate (SrTi0 3 ), barium strontium titanate (Ba 1 _ x Sr x Ti0 3 ) and lead titanate (PbTi0 3 ), the function-graded individual layers then each consisting of at least two of these materials with changing composition.
  • the individual layers of the oxide ceramic layer can also consist essentially of barium titanate zirconate (Ba (Ti 1 _ y Zr y ) 0 3 ) and lead zirconate titanate (Pb (Zr 1. Y Ti y ) 0 3 ).
  • the grading can take place in such a way that the phase transition temperature (Curie temperature) of the individual layers close to the substrate is lower than the phase transition temperature of the individual layers remote from the substrate, and in particular the individual layers are arranged such that a single layer close to the substrate has a low has a lower phase transition temperature than the adjacent single layer which is spaced further from the substrate.
  • the reverse layer sequence is also possible.
  • the individual layer close to the substrate can consist essentially, in particular 100%, of strontium titanate and the barium portion in the barium strontium titanate individual layers deposited above it with increasing Increase distance from the substrate, in which case the single layer furthest away from the substrate can consist of 100% barium titanate.
  • the grading can be done in such a way that the material composition changes in uniform steps from single layer to individual layer. A different, non-linear grading profile is also possible.
  • the individual layers of the oxide-ceramic thin layer can be produced by physical processes such as laser ablation, magnetron sputtering processes or also by chemical processes such as gas phase deposition or by wet chemical coating, ie. H. Manufacture techniques that are common in semiconductor manufacturing.
  • FIG. 1 shows a schematic representation of a thin-film capacitor with the parallel connection of the individual layers in accordance with the present invention together with the associated circuit diagram
  • FIG. 2 shows the thin-film capacitor from FIG. 1 in plan view
  • Figure 3 is a schematic representation of a thin film capacitor with a series connection of the individual layers according to the present invention together with the associated circuit diagram
  • FIG. 4 shows an enlarged representation of the layer structure of the thin-film capacitor according to FIGS. 1 and 3,
  • FIG. 5 is a diagram showing the temperature dependence of the relative dielectric ( ⁇ r ) of different materials.
  • Figure 6 is a diagram showing the temperature dependence of the relative change in capacitance with respect to room temperature of different materials and Figure 7 is a schematic view of a discrete ceramic multilayer capacitor according to the prior art.
  • This thin-film capacitor 1 has a substrate 2 which is made of an electrically insulating material such as Al 2 O 3 , sapphire or the like. there is an oxide ceramic thin layer 3 arranged thereon and an interdigital electrode arrangement 4 which is provided on the side of the oxide ceramic thin layer 3 opposite the substrate 2.
  • the oxide-ceramic thin layer 3 is formed from a multiplicity of individual layers 3a, 3b, 3c ... which each extend parallel to the substrate 2 and consist of high-dielectric materials, so that the individual layers 3a, 3b, 3c ... of the oxide-ceramic thin layer 3 Form plate capacitors, which, as indicated in Figure 1, are connected in parallel.
  • the individual layers 3a, 3b, 3c each consist of at least two materials of high dielectric and are function-graded, ie their composition changes with increasing distance from the substrate 2, as is shown by way of example in FIG. 3.
  • An oxide-ceramic thin-layer arrangement 3 consisting of 11 individual layers 3a, 3b ..., 31 is shown there, which consists of the material systems strontium titanate (SrTi0 3 ) and barium titanate (BaTi0 3 ) exist.
  • the oxide ceramic layers have total layer thicknesses of approximately 170 to 190 nm.
  • the individual layer 3a coming into contact with the substrate 2 consists entirely of stronium titanate, and the strontium portion in the barium strontium titanate layers decreases from layer to layer in favor of a correspondingly growing portion of barium, ie Strontium titanate is no longer contained in the 11th individual layer 31 coming into contact with the interdigital electrode arrangement 4.
  • Figure 4 shows the temperature dependence of the dielectric constant of pure Ba 0 _ 5 Sr 0 5 TiO 3 and Ba ⁇ i0 3 im
  • V rms 10 kHz
  • the curves of B o, 5 Sr o, 5 T '- 0 3 and BaTi0 3 have pronounced maxima, while the graded material has a flat course, ie a low temperature dependence.
  • the characteristic curve of the graded material can be set by appropriate selection of suitable material systems and by the composition of the individual layers.
  • the composition can also consist, for example, of the material systems strontium titanate, barium titanate, lead titanate with suitable doping.
  • a material system barium titanate zirconate (Ba (Ti y Zr y ) 0 3 ) lead zirconate titanate (Pb (Z ⁇ y i y JO j ) with suitable doping is also conceivable.
  • the individual layers of the oxide-ceramic thin layer 3 can be produced by conventional physical methods such as laser ablation, magnetron sputtering methods etc. or by chemical methods such as gas phase deposition or wet chemical coating, as are common in semiconductor technology.
  • the interdigital electrode arrangement can be applied to the oxide-ceramic thin layer, for example, by a combination of sputtering and the use of lift-off photolithography.
  • FIG. 3 shows a further embodiment of a thin-film capacitor 1 according to the present invention in a schematic, enlarged representation.
  • This thin-film capacitor 1 has a semiconductor substrate 2 which carries a bottom electrode 5.
  • An oxide-ceramic thin layer 3 is attached to the bottom electrode. orders, on which in turn an electrode 4 is provided.
  • the oxide ceramic thin layer 3 is formed in the manner described above from a multiplicity of individual layers 3a, 3b, 3c ...., each extending parallel to the substrate 2 and consisting of highly dielectric materials, so that the individual layers 3a, 3b, 3c ... of the oxide ceramic thin layer 3 form plate capacitors which, as indicated in FIG. 3, are connected in series with one another.

Abstract

L'invention concerne un condensateur en couche mince composé d'un substrat électroisolant (2), d'une couche de céramique oxydée (3) appliquée sur ce substrat, présentant une pluralité de couches individuelles (3a, 3b, 3c...) à graduation fonctionnelle, réalisées à partir d'au moins deux matériaux très diélectriques, et d'un dispositif d'électrodes interdigital (4), disposé sur le côté de la couche de céramique oxydée (3) faisant face au substrat (2).
PCT/EP2000/008319 1999-09-06 2000-08-26 Condensateur en couche mince WO2001018830A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19942341.5 1999-09-06
DE19942341 1999-09-06

Publications (1)

Publication Number Publication Date
WO2001018830A1 true WO2001018830A1 (fr) 2001-03-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/008319 WO2001018830A1 (fr) 1999-09-06 2000-08-26 Condensateur en couche mince

Country Status (1)

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WO (1) WO2001018830A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313005A1 (de) * 2003-03-24 2004-10-14 Siemens Ag Revervebatterie, Verfahren zu deren Herstellung und Betriebsverfahren für eine derartige Reservebatterie
US20110210806A1 (en) * 2007-07-16 2011-09-01 Us Government As Represented By The Secretary Of The Army Thin film compositionally stratified multi-layer heterostructure for temperature insensitive low dielectric loss and enhanced tunablity otm communications devices and methods for fabrication thereof
US8101495B2 (en) 2008-03-13 2012-01-24 Infineon Technologies Ag MIM capacitors in semiconductor components
GB2504346A (en) * 2012-07-27 2014-01-29 Univ Barcelona Autonoma Magnetic flux concentrator with alternating ferromagnetic and diamagnetic or superconducting elements
US9506153B2 (en) 2014-09-17 2016-11-29 The United States Of America As Represented By The Secretary Of The Army Integrated composite perovskite oxide heterostructure
US10032853B2 (en) 2014-09-17 2018-07-24 The United States Of America As Represented By The Secretary Of The Army Microstructural architecture to enable strain relieved non-linear complex oxide thin films

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693429A (en) * 1995-01-20 1997-12-02 The United States Of America As Represented By The Secretary Of The Army Electronically graded multilayer ferroelectric composites
EP0814486A1 (fr) * 1996-06-20 1997-12-29 Murata Manufacturing Co., Ltd. Composition diélectrique céramique et son utilisation dans un condensateur monolithique céramique
WO1998000872A1 (fr) * 1996-06-28 1998-01-08 Lsi Logic Corporation Dispositif a circuit integre et son procede de fabrication
US5790367A (en) * 1995-12-12 1998-08-04 U.S. Philips Corporation Multilayer capacitor comprising a dielectric of modified barium strontium titanate
JPH10340900A (ja) * 1997-06-03 1998-12-22 Applied Materials Inc 低誘電率膜用高堆積率レシピ
DE19928280A1 (de) * 1998-07-07 2000-01-20 Samsung Electronics Co Ltd Ferroelektrischer Kondensator und Verfahren zur Herstellung desselben

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693429A (en) * 1995-01-20 1997-12-02 The United States Of America As Represented By The Secretary Of The Army Electronically graded multilayer ferroelectric composites
US5790367A (en) * 1995-12-12 1998-08-04 U.S. Philips Corporation Multilayer capacitor comprising a dielectric of modified barium strontium titanate
EP0814486A1 (fr) * 1996-06-20 1997-12-29 Murata Manufacturing Co., Ltd. Composition diélectrique céramique et son utilisation dans un condensateur monolithique céramique
WO1998000872A1 (fr) * 1996-06-28 1998-01-08 Lsi Logic Corporation Dispositif a circuit integre et son procede de fabrication
JPH10340900A (ja) * 1997-06-03 1998-12-22 Applied Materials Inc 低誘電率膜用高堆積率レシピ
DE19928280A1 (de) * 1998-07-07 2000-01-20 Samsung Electronics Co Ltd Ferroelektrischer Kondensator und Verfahren zur Herstellung desselben

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 03 31 March 1999 (1999-03-31) *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313005A1 (de) * 2003-03-24 2004-10-14 Siemens Ag Revervebatterie, Verfahren zu deren Herstellung und Betriebsverfahren für eine derartige Reservebatterie
DE10313005B4 (de) * 2003-03-24 2007-05-03 Siemens Ag Reservebatterie und Verfahren zu deren Herstellung
US20110210806A1 (en) * 2007-07-16 2011-09-01 Us Government As Represented By The Secretary Of The Army Thin film compositionally stratified multi-layer heterostructure for temperature insensitive low dielectric loss and enhanced tunablity otm communications devices and methods for fabrication thereof
US8053027B2 (en) 2007-07-16 2011-11-08 The United States of America as represented bt the Secretary of the Army Methods for fabrication of thin film compositionally stratified multi-layer heterostructures for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices
US8216701B2 (en) 2007-07-16 2012-07-10 The United States Of America As Represented By The Secretary Of The Army Thin film compositionally stratified multi-layer heterostructure for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices and methods for fabrication thereof
US8101495B2 (en) 2008-03-13 2012-01-24 Infineon Technologies Ag MIM capacitors in semiconductor components
US8314452B2 (en) 2008-03-13 2012-11-20 Infineon Technologies Ag MIM capacitors in semiconductor components
DE102009000627B4 (de) * 2008-03-13 2014-12-11 Infineon Technologies Ag MIM-Kondensatoren in Halbleiterkomponenten und Verfahren zur Herstellung eines Fingerkondensators
GB2504346A (en) * 2012-07-27 2014-01-29 Univ Barcelona Autonoma Magnetic flux concentrator with alternating ferromagnetic and diamagnetic or superconducting elements
GB2504346B (en) * 2012-07-27 2015-01-14 Univ Barcelona Autonoma Device for concentrating or amplifying a magnetic flux, a method for concentrating or amplifying a magnetic flux, a magnetic operating apparatus, and use of a
US9506153B2 (en) 2014-09-17 2016-11-29 The United States Of America As Represented By The Secretary Of The Army Integrated composite perovskite oxide heterostructure
US10032853B2 (en) 2014-09-17 2018-07-24 The United States Of America As Represented By The Secretary Of The Army Microstructural architecture to enable strain relieved non-linear complex oxide thin films

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