WO2000079603A1 - Dispositif a semi-conducteur en diamant et son procede de production - Google Patents

Dispositif a semi-conducteur en diamant et son procede de production Download PDF

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Publication number
WO2000079603A1
WO2000079603A1 PCT/JP2000/004064 JP0004064W WO0079603A1 WO 2000079603 A1 WO2000079603 A1 WO 2000079603A1 JP 0004064 W JP0004064 W JP 0004064W WO 0079603 A1 WO0079603 A1 WO 0079603A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond semiconductor
semiconductor device
type
diamond
junction
Prior art date
Application number
PCT/JP2000/004064
Other languages
English (en)
Japanese (ja)
Inventor
Toshihiro Ando
Yoichiro Sato
Eiji Yasu
Mika Gamo
Isao Sakaguchi
Original Assignee
Japan Science And Technology Corporation
National Institute Of Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science And Technology Corporation, National Institute Of Materials Science filed Critical Japan Science And Technology Corporation
Publication of WO2000079603A1 publication Critical patent/WO2000079603A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6603—Diodes

Abstract

L'invention concerne un dispositif à semi-conducteur en diamant présentant une jonction p-n permettant une rectification à haute température. Une couche de cristal (4) de diamant à semi-conducteur de type n dopé au soufre en tant que donneur et tirée sur un cristal (2) en diamant à semi-conducteur de type b constitué de diamant synthétique sous haute pression dopé au bore ou de diamant IIb naturel, par exemple, par un procédé de dépôt chimique en phase vapeur au plasma pour former une jonction p-n (6). La jonction p-n est capable d'une rectification à une température pouvant aller jusqu'à 500 °C.
PCT/JP2000/004064 1999-06-21 2000-06-21 Dispositif a semi-conducteur en diamant et son procede de production WO2000079603A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17472299A JP4002955B2 (ja) 1999-06-21 1999-06-21 ダイヤモンド半導体デバイスの製造方法
JP11/174722 1999-06-21

Publications (1)

Publication Number Publication Date
WO2000079603A1 true WO2000079603A1 (fr) 2000-12-28

Family

ID=15983519

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/004064 WO2000079603A1 (fr) 1999-06-21 2000-06-21 Dispositif a semi-conducteur en diamant et son procede de production

Country Status (3)

Country Link
JP (1) JP4002955B2 (fr)
TW (1) TW466777B (fr)
WO (1) WO2000079603A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ301473B6 (cs) * 2006-04-03 2010-03-17 Polovodice, A. S. Polovodicová soucástka pro usmernení strídavého proudu velkého výkonu

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1331235C (zh) 2002-06-18 2007-08-08 住友电气工业株式会社 n型半导体金刚石的制造方法及半导体金刚石
JP5119553B2 (ja) * 2008-07-24 2013-01-16 独立行政法人産業技術総合研究所 ダイヤモンド半導体素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001452A (en) * 1987-06-02 1991-03-19 Sumitomo Electric Industries, Ltd. Semiconducting diamond and process for producing the same
EP0643423A2 (fr) * 1993-09-10 1995-03-15 Sumitomo Electric Industries, Ltd. Dispositif semi-conducteur en diamant

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001452A (en) * 1987-06-02 1991-03-19 Sumitomo Electric Industries, Ltd. Semiconducting diamond and process for producing the same
EP0643423A2 (fr) * 1993-09-10 1995-03-15 Sumitomo Electric Industries, Ltd. Dispositif semi-conducteur en diamant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ301473B6 (cs) * 2006-04-03 2010-03-17 Polovodice, A. S. Polovodicová soucástka pro usmernení strídavého proudu velkého výkonu

Also Published As

Publication number Publication date
TW466777B (en) 2001-12-01
JP4002955B2 (ja) 2007-11-07
JP2001007348A (ja) 2001-01-12

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