WO2000077827A3 - Niederinduktives halbleiterbauelement - Google Patents

Niederinduktives halbleiterbauelement Download PDF

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Publication number
WO2000077827A3
WO2000077827A3 PCT/DE2000/001254 DE0001254W WO0077827A3 WO 2000077827 A3 WO2000077827 A3 WO 2000077827A3 DE 0001254 W DE0001254 W DE 0001254W WO 0077827 A3 WO0077827 A3 WO 0077827A3
Authority
WO
WIPO (PCT)
Prior art keywords
load
switching elements
semiconductor component
current
connecting elements
Prior art date
Application number
PCT/DE2000/001254
Other languages
English (en)
French (fr)
Other versions
WO2000077827A2 (de
Inventor
Martin Hierholzer
Original Assignee
Eupec Gmbh & Co Kg
Martin Hierholzer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eupec Gmbh & Co Kg, Martin Hierholzer filed Critical Eupec Gmbh & Co Kg
Priority to JP2001503209A priority Critical patent/JP3675403B2/ja
Priority to EP00934918A priority patent/EP1186041A2/de
Publication of WO2000077827A2 publication Critical patent/WO2000077827A2/de
Publication of WO2000077827A3 publication Critical patent/WO2000077827A3/de
Priority to US10/023,189 priority patent/US6809411B2/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Abstract

Es wird ein Halbleiterbauelement vorgeschlagen, das ein Gehäuse, eine Trägerplatte, zumindest ein Keramiksubstrat, das zumindest an seiner Oberseite mit einer Metallisierung (10) versehen ist und zumindest zwei Schaltelemente aufweist, vorgeschlagen. Die Schaltelemente sind auf der Oberseite des Keramiksubstrats elektrisch leitend angeordnet und verfügen jeweils über Laststromanschlüsse und einen Steueranschluß. Erfindungsgemäß verfügt das Halbleiterbauelement über mehrere externe Laststromanschlußelemente, die auf einer ersten Seite und einer zweiten, der ersten gegenüberliegenden Seite angeordnet sind. Die Laststromanschlüsse der Schaltelemente sind über Zuführungen elektrisch mit den externen Laststromanschlußelementen verbunden, die ein erstes und ein zweites Versorgungspotential aufweisen können. Jeweils zwei Schaltelemente sind derart benachbart angeordnet, daß sich die jeweiligen Zuführungen annähernd parallel zu zwei zugeordneten Laststromanschlußelementen hin erstrecken, wobei die zwei benachbarten Laststromanschlußelemente unterschiedliche Polarität aufweisen. Hierdurch wird eine Kompensation der Magnetfelder erzielt.
PCT/DE2000/001254 1999-06-15 2000-04-20 Niederinduktives halbleiterbauelement WO2000077827A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001503209A JP3675403B2 (ja) 1999-06-15 2000-04-20 半導体素子およびその使用方法
EP00934918A EP1186041A2 (de) 1999-06-15 2000-04-20 Niederinduktives halbleiterbauelement
US10/023,189 US6809411B2 (en) 1999-06-15 2001-12-17 Low-inductance semiconductor components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19927285A DE19927285C2 (de) 1999-06-15 1999-06-15 Niederinduktives Halbleiterbauelement
DE19927285.9 1999-06-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/023,189 Continuation US6809411B2 (en) 1999-06-15 2001-12-17 Low-inductance semiconductor components

Publications (2)

Publication Number Publication Date
WO2000077827A2 WO2000077827A2 (de) 2000-12-21
WO2000077827A3 true WO2000077827A3 (de) 2001-04-19

Family

ID=7911315

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001254 WO2000077827A2 (de) 1999-06-15 2000-04-20 Niederinduktives halbleiterbauelement

Country Status (6)

Country Link
US (1) US6809411B2 (de)
EP (1) EP1186041A2 (de)
JP (1) JP3675403B2 (de)
KR (1) KR100458425B1 (de)
DE (1) DE19927285C2 (de)
WO (1) WO2000077827A2 (de)

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DE10109344C1 (de) * 2001-02-27 2002-10-10 Siemens Ag Schaltungsanordnung mit Halbbrücken
JP3748075B2 (ja) * 2002-08-30 2006-02-22 セイコーエプソン株式会社 電子モジュール及びその製造方法並びに電子機器
DE102005036116B4 (de) * 2005-08-01 2012-03-22 Infineon Technologies Ag Leistungshalbleitermodul
DE102006004031B3 (de) * 2006-01-27 2007-03-08 Infineon Technologies Ag Leistungshalbleitermodul mit Halbbrückenkonfiguration
DE102006012781B4 (de) 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
DE102007013186B4 (de) 2007-03-15 2020-07-02 Infineon Technologies Ag Halbleitermodul mit Halbleiterchips und Verfahren zur Herstellung desselben
US7791208B2 (en) 2007-09-27 2010-09-07 Infineon Technologies Ag Power semiconductor arrangement
US8461623B2 (en) 2008-07-10 2013-06-11 Mitsubishi Electric Corporation Power semiconductor module
DE102014219998B4 (de) 2014-10-02 2020-09-24 Vitesco Technologies GmbH Leistungsmodul, Leistungsmodulgruppe, Leistungsendstufe sowie Antriebssystem mit einer Leistungsendstufe

Citations (2)

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EP0558226A2 (de) * 1992-02-25 1993-09-01 AT&T Corp. Ausgleichschaltung zum Reduzieren des induktiven Rauschens äusserlicher Chipverbindungen
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Publication number Priority date Publication date Assignee Title
EP0558226A2 (de) * 1992-02-25 1993-09-01 AT&T Corp. Ausgleichschaltung zum Reduzieren des induktiven Rauschens äusserlicher Chipverbindungen
US5617293A (en) * 1994-11-07 1997-04-01 Siemens Aktiengesellschaft Bridge module

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
JP2003502834A (ja) 2003-01-21
US6809411B2 (en) 2004-10-26
EP1186041A2 (de) 2002-03-13
US20020089046A1 (en) 2002-07-11
KR100458425B1 (ko) 2004-11-26
JP3675403B2 (ja) 2005-07-27
WO2000077827A2 (de) 2000-12-21
KR20020021127A (ko) 2002-03-18
DE19927285A1 (de) 2000-12-28
DE19927285C2 (de) 2003-05-22

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