WO2000075963A3 - Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür - Google Patents

Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür Download PDF

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Publication number
WO2000075963A3
WO2000075963A3 PCT/DE2000/001609 DE0001609W WO0075963A3 WO 2000075963 A3 WO2000075963 A3 WO 2000075963A3 DE 0001609 W DE0001609 W DE 0001609W WO 0075963 A3 WO0075963 A3 WO 0075963A3
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WO
WIPO (PCT)
Prior art keywords
anode
commutated
recovery time
cathode
semiconductor body
Prior art date
Application number
PCT/DE2000/001609
Other languages
English (en)
French (fr)
Other versions
WO2000075963A2 (de
Inventor
Hans-Joachim Schulze
Franz Josef Niedernostheide
Original Assignee
Siemens Ag
Schulze Hans Joachim
Franz Josef Niedernostheide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Schulze Hans Joachim, Franz Josef Niedernostheide filed Critical Siemens Ag
Priority to EP00945534A priority Critical patent/EP1218924A2/de
Priority to JP2001502143A priority patent/JP2003501825A/ja
Priority to US10/018,592 priority patent/US6723586B1/en
Publication of WO2000075963A2 publication Critical patent/WO2000075963A2/de
Publication of WO2000075963A3 publication Critical patent/WO2000075963A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Thyristors (AREA)

Abstract

Die Erfindung betrifft einen Thyristor bestehend aus einem Halbleiterkörper (1) mit einer anodenseitigen Basiszone (2) von einem ersten Leitungstyp und einer kathodenseitigen Basiszone (3) von dem zweiten entgegengesetzten Leitungstyp sowie mit kathodenseitigen und anodenseitigen Emitterzonen (4, 5). Damit der Thyristor bereits innerhalb der Freiwerdezeit wieder mit einem Spannungsstoß belastet werden kann, ohne dabei durch eine in der Kathodenfläche auftretende Stromfilamentierung zerstört zu werden, wird eine anodenseitige Defektzone (10) mit verminderter Lebensdauer der freien Ladungsträger mit einer vorgegebenen Dicke von mindestens 20 νm innerhalb der anodenseitigen Basiszone (2) vorgeschlagen. Die Defektzone (10) kann durch anodenseitige Bestrahlung von vorgegebenen Bereichen des Halbleiterkörpers (1) mit geladenen Teilchen und Temperung des Halbleiterkörpers (1) zur Stabilisierung der Defektzone (10) hergestellt werden.
PCT/DE2000/001609 1999-06-08 2000-05-19 Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür WO2000075963A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00945534A EP1218924A2 (de) 1999-06-08 2000-05-19 Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür
JP2001502143A JP2003501825A (ja) 1999-06-08 2000-05-19 リカバリタイム保護機能が集積されたサイリスタ及びその製造方法
US10/018,592 US6723586B1 (en) 1999-06-08 2000-05-19 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19926104 1999-06-08
DE19926104.0 1999-06-08

Publications (2)

Publication Number Publication Date
WO2000075963A2 WO2000075963A2 (de) 2000-12-14
WO2000075963A3 true WO2000075963A3 (de) 2002-05-02

Family

ID=7910555

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001609 WO2000075963A2 (de) 1999-06-08 2000-05-19 Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US6723586B1 (de)
EP (1) EP1218924A2 (de)
JP (1) JP2003501825A (de)
WO (1) WO2000075963A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
DE102004025082B4 (de) * 2004-05-21 2006-12-28 Infineon Technologies Ag Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung
DE102004062183B3 (de) * 2004-12-23 2006-06-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristoranordnung mit integriertem Schutzwiderstand und Verfahren zu deren Herstellung
DE102006035630B4 (de) * 2006-07-31 2012-12-06 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements
DE102007041124B4 (de) * 2007-08-30 2009-06-04 Infineon Technologies Ag Thyristor mit verbessertem Einschaltverhalten, Thyristoranordnung mit einem Thyristor, Verfahren zur Herstellung eines Thyristors und einer Thyristoranordnung
DE102009051828B4 (de) * 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung
US8835975B1 (en) 2013-05-10 2014-09-16 Ixys Corporation Ultra-fast breakover diode
US9312135B2 (en) * 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0651446A2 (de) * 1993-10-28 1995-05-03 Kabushiki Kaisha Toshiba GTO-Thyristor
EP0767500A2 (de) * 1995-10-03 1997-04-09 Hitachi, Ltd. Halbleiterleistungsbauteil mit Gitterfehlstellen
DE19650762A1 (de) * 1996-09-30 1998-07-02 Eupec Gmbh & Co Kg Thyristor mit Durchbruchbereich
US5869358A (en) * 1996-12-02 1999-02-09 Asea Brown Boveri Ag Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors
JPH0680820B2 (ja) * 1989-10-16 1994-10-12 株式会社東芝 過電圧保護機能付半導体装置及びその製造方法
US5243205A (en) * 1989-10-16 1993-09-07 Kabushiki Kaisha Toshiba Semiconductor device with overvoltage protective function
WO1992017907A1 (de) * 1991-03-27 1992-10-15 Siemens Aktiengesellschaft Thyristor mit einstellbarer kippspannung und verfahren zu seiner herstellung
JP3238415B2 (ja) * 1996-09-30 2001-12-17 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト ブレークダウン領域をもつサイリスタ
JP3488599B2 (ja) * 1996-10-17 2004-01-19 株式会社東芝 半導体装置
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0651446A2 (de) * 1993-10-28 1995-05-03 Kabushiki Kaisha Toshiba GTO-Thyristor
EP0767500A2 (de) * 1995-10-03 1997-04-09 Hitachi, Ltd. Halbleiterleistungsbauteil mit Gitterfehlstellen
DE19650762A1 (de) * 1996-09-30 1998-07-02 Eupec Gmbh & Co Kg Thyristor mit Durchbruchbereich
US5869358A (en) * 1996-12-02 1999-02-09 Asea Brown Boveri Ag Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter

Also Published As

Publication number Publication date
WO2000075963A2 (de) 2000-12-14
US6723586B1 (en) 2004-04-20
JP2003501825A (ja) 2003-01-14
EP1218924A2 (de) 2002-07-03

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