WO2000067303A1 - Procede et appareil d'exposition - Google Patents

Procede et appareil d'exposition Download PDF

Info

Publication number
WO2000067303A1
WO2000067303A1 PCT/JP2000/002761 JP0002761W WO0067303A1 WO 2000067303 A1 WO2000067303 A1 WO 2000067303A1 JP 0002761 W JP0002761 W JP 0002761W WO 0067303 A1 WO0067303 A1 WO 0067303A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
illumination light
illumination
mask
prism
Prior art date
Application number
PCT/JP2000/002761
Other languages
English (en)
Japanese (ja)
Inventor
Takashi Aoki
Naomasa Shiraishi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU41430/00A priority Critical patent/AU4143000A/en
Publication of WO2000067303A1 publication Critical patent/WO2000067303A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Definitions

  • the present invention relates to an exposure method used when manufacturing a microdevice such as a semiconductor integrated circuit, an imaging device (CCD or the like), a liquid crystal display, a plasma display, or a thin-film magnetic head by using a lithography technique.
  • a microdevice such as a semiconductor integrated circuit, an imaging device (CCD or the like), a liquid crystal display, a plasma display, or a thin-film magnetic head by using a lithography technique.
  • a halogen molecule laser such as an F 2 laser (wavelength: 157 nm)
  • F 2 laser wavelength: 157 nm
  • laser light is used as exposure light.
  • laser light is light that is strongly linearly polarized and has high coherence. Therefore, when laser light is used as the exposure light, speckle-like interference fringes called speckles are generated in the illumination area. The occurrence of this speckle makes the illuminance distribution of the exposure light non-uniform and deteriorates the uniformity of the line width of a circuit pattern formed on a substrate to be exposed such as a wafer. Speed, etc.) It may cause malfunction.
  • a quartz prism is arranged in the optical path of the exposure light to reduce the coherence of the exposure light.
  • ordinary crystals have a large decrease in transmittance for vacuum ultraviolet light with a wavelength of about 200 nm or less. Therefore, if the exposure light is about the ArF excimer laser light, the crystal can be used by taking measures such as prolonging the exposure time against a decrease in illuminance, but the throughput will be significantly reduced. There is an inconvenience. And, the crystal becomes difficult to use to greatly reduced transmittance with respect to a shorter wavelength of F 2 laser light.
  • the present invention provides a method for controlling the illuminance of the illumination light even when using light having a coherence with a wavelength of about the vacuum ultraviolet region as the exposure illumination light. It is a first object of the present invention to provide an exposure method that can increase the uniformity of the illuminance distribution of the illumination light without significantly reducing the illuminance.
  • a second object of the present invention is to provide an illumination optical device and an exposure device capable of performing such an exposure method.
  • the present invention seeks a material having a birefringence effect and a high transmittance with respect to illumination light having a wavelength in the vacuum ultraviolet range, and an illumination optical device capable of performing such an exposure method using this material.
  • the third purpose is to provide.
  • Still another object of the present invention is to provide a method for manufacturing such an exposure apparatus and a method for manufacturing a device using such an exposure method. Disclosure of the invention
  • a first exposure method is an exposure method for illuminating a mask (R) with illumination light and transferring the pattern of the mask onto a substrate (W), wherein the wavelength of the illumination light is about 180 nm.
  • An optical element made of magnesium fluoride (MgF 2 ) is placed on the optical path until the illumination light enters the mask, and a direction substantially perpendicular to the optical path of the illumination light Then, the polarization state of the illumination light is gradually changed.
  • the polarization state of the illumination light is a predetermined state such as linearly polarized light or circularly polarized light
  • the polarization state is gradually changed in a direction substantially perpendicular to the optical path.
  • the spatial coherence of the illumination light Spatial coherency
  • the occurrence of scattering in the illumination area is suppressed, and the uniformity of the illuminance distribution is improved.
  • the wavelength of the illumination light is set to 180 nm.
  • the polarization state of the illuminating light is changed by an optical element made of magnesium fluoride prior to incidence on the mask.
  • generation of speckles in the illumination area is suppressed, and the uniformity of the illuminance distribution is improved.
  • the entire mask pattern is transferred onto the substrate with high line width uniformity and high throughput. be able to.
  • a first illumination optical device is an illumination optical device (15) for illuminating a mask (W) with illumination light having a wavelength of 200 nm or less from a light source (1), On the optical path of the illuminating light between the light source (1) and the mask, the illuminating light is formed of a material that is transmissive and birefringent to the illuminating light, and intersects the optical axis of the illuminating optical device A prism (3) whose thickness changes gradually in the direction is arranged.
  • the exposure method of the present invention can be performed. That is, since the prism is formed of a birefringent material, the prism is inclined in a plane perpendicular to the optical axis in a plane perpendicular to the optical axis. According to the position, the polarization state of the illumination light can be continuously changed in a direction perpendicular to the optical axis. Further, as a material of the prism, a wavelength of about 200 nm or less, that is, a relatively high transmittance even in a vacuum ultraviolet region. By using an optical glass material with an excessive ratio, the illuminance on the mask can be kept high.
  • a crystal of magnesium fluoride (MgF 2 ) can be used as a material having high transmittance and birefringence even in the vacuum ultraviolet region.
  • Magnesium fluoride has a sufficiently high transmittance for ultraviolet light up to a wavelength of about 130 nm. In particular, when the wavelength is about 180 nm or less in the vacuum ultraviolet region, the transmittance of the conventionally used quartz is greatly reduced, and magnesium fluoride is effective.
  • a second illumination optical device is an illumination optical device for illuminating a mask (R) with illumination light having a wavelength of 200 nm or less from a light source, and the illumination light from the light source is provided.
  • a prism (which is made of a material that is transparent and birefringent to the illumination light, and whose thickness gradually changes in a direction intersecting the optical axis of the illumination optical device). 3), a vibrating member (4) for vibrating the illumination light passing through the prism, and an optical integray (5A, 5B) for forming a plurality of light source images from the illumination light passing through the vibrating member.
  • a condenser optical system (9) for guiding the illumination light emitted from the optical integrator to the mask.
  • the present invention it is possible to improve the uniformity of the illuminance distribution of the illumination light as in the first illumination optical device. Further, by vibrating the vibrating member during illumination, the illuminance unevenness of the illumination light is reduced by the integration effect.
  • the use of the optical integrator (homogenizer) allows the illumination light to be superimposed, thereby making the illuminance distribution of the illumination light more uniform.
  • a first exposure apparatus is an exposure apparatus including the illumination optical device (15) of the present invention, and illuminates a mask (R) with illumination light from the illumination optical device. Transfers mask pattern onto substrate (W) It is.
  • the exposure method of the present invention can be carried out, and the entire pattern of the mask can be transferred onto the substrate with high line width uniformity at high throughput. it can.
  • the second exposure apparatus has an illumination optical system that irradiates a mask with coherent illumination light having a wavelength of about 180 nm or less, and exposes the substrate with the illumination light via the mask.
  • an optical element that changes the polarization state of the illumination light is formed of magnesium fluoride in order to reduce the flexibility of the illumination light in the illumination optical system.
  • the second exposure method of the present invention can be performed, and the entire mask pattern can be formed on the substrate with high line width uniformity at high throughput. Can be transcribed.
  • a method of manufacturing an exposure apparatus includes assembling the illumination optical device of the present invention, a mask stage for holding a mask thereof, and a substrate stage for holding a substrate in a predetermined positional relationship.
  • the device manufacturing method according to the present invention includes a step of illuminating the mask with the illumination light using the exposure method of the present invention, and transferring a pattern of the mask onto the substrate.
  • the entire mask pattern can be transferred onto the substrate with high line width uniformity without lowering the illuminance of the illumination light.
  • Devices can be manufactured with high throughput.
  • FIG. 1 is a schematic configuration diagram illustrating a projection exposure apparatus according to an example of an embodiment of the present invention.
  • FIG. 2 is an enlarged perspective view showing the relationship between the prism 3 in FIG. 1 and the traveling direction and polarization direction of the illumination light.
  • FIG. 3 is a diagram illustrating an example of the polarization state of the illumination light emitted from the prism 3.
  • Figure 4 shows the manufacturing of semiconductor devices. It is a figure showing a fabrication process. BEST MODE FOR CARRYING OUT THE INVENTION
  • the present invention is applied to a projection exposure apparatus for manufacturing a semiconductor device.
  • FIG. 1 shows a schematic configuration of the projection exposure apparatus of the present embodiment.
  • a laser light source 1 as an exposure light source to an illumination optical system 15 composed of a condenser lens system 9 are used.
  • Illumination light (exposure light) IL illuminates, for example, a rectangular illumination area on the pattern surface (lower surface) of reticle R as a mask.
  • vacuum ultraviolet (VUV) F 2 laser light (wavelength: 157 nm) is used as the exposure light.
  • ArF excimer laser light (wavelength: 193 nm), YAG laser light
  • the exposure light Even when light having a wavelength of about 200 nm or less, such as harmonics of solid-state laser light or semiconductor laser light, or vacuum ultraviolet light is used as the exposure light, the coherence of the exposure light is strong. In such a case, the present invention is effective.
  • Illumination light IL passes through the temporal coherence retarder 2 is an optical member for reducing the (time coherency I) (described in detail later), magnesium fluoride is a material having a Fuku ⁇ folding resistance (M g F 2 Incident on the prism 3 made of).
  • M g F 2 Incident on the prism 3 made of
  • the polarization state of the illumination light IL continuously changes in the direction perpendicular to the optical axis according to the position of the line projected on the plane perpendicular to the optical axis of the slope of the illumination light IL.
  • space Effective coherency (spatial coherency) is reduced.
  • the illumination light IL that has passed through the prism 3 passes through a vibrating mirror 4 as an optical element for further reducing spatial coherence, and then travels through a first stage fly as an optical integrator (homogenizer). After reaching the eye lens 5A, a plurality of light source images are formed at the rear focal position near the exit surface.
  • the illumination light IL from the plurality of light source images enters the stop 7 via the lens 6A.
  • the aperture diameter of the aperture 7 is adjustable, and the illuminance (light amount) of the illumination light IL on the reticle R can be controlled by controlling the aperture diameter.
  • a main control system 13 that controls the overall operation of the apparatus controls the aperture diameter of the aperture 7 via an illumination system control device 14.
  • the illumination light IL that has passed through the aperture 7 passes through the lens 6B and the second-stage fly-eye lens 5B, and forms a large number of light source images at the rear focal point near the exit surface of the fly-eye lens 5B.
  • An aperture stop ( ⁇ stop) 5C is arranged near the exit surface.
  • the illumination light IL that has passed through the aperture stop 5C is turned 90 ° downward by a mirror 8 and then condensed by a condenser lens system.
  • the condenser lens system 9 is shown in a simplified manner, it is actually an optical system that forms an image once inside and has a reticle blind (variable field stop) on the image forming surface.
  • the illumination optical system 15 in this example is a double integrator system with a two-stage fly-eye lens (fly-eye and integrator system). The uniformity of the illuminance distribution has been improved.
  • the reticle R has a predetermined circuit pattern formed on a pattern surface of a transparent substrate such as fluorite or fluorine-doped quartz glass which is transparent to the illumination light IL and does not exhibit birefringence. An enlarged reticle pattern was formed. Illumination light IL that has passed through reticle R is applied to both sides (or to the wafer side). One side) Through a telecentric projection optical system PL, a pattern image in the illumination area of the reticle R is coated with a photoresist as a substrate at a predetermined projection magnification] 3 (3 is 1Z4, 1Z5, etc.) Projected on the wafer W.
  • the wafer W is a disk-shaped substrate such as a semiconductor (silicon or the like) or an SOI (silicon on insulator) for manufacturing a semiconductor device.
  • an imaging characteristic correction member 30 made of a parallel plate and having a variable tilt angle is installed, and the main control system 13 is connected to the imaging characteristic correction member 3 via a drive system (not shown).
  • the configuration is such that the desired imaging characteristics (distortion and the like) of the projection optical system PL can be corrected to a desired state.
  • the projection optical system PL can be constituted by a refraction system.
  • a catadioptric system combining a reflective system and a refractive system, or a reflective system may be used. Examples of the catadioptric system include, for example, Japanese Patent Application Laid-Open No.
  • a projection optical system PL a pair of reflection elements (primary mirror and secondary mirror) each having an opening (transmission part) through which exposure light passes are arranged on an optical axis on which a plurality of refraction elements are arranged.
  • An optical system that forms a primary image (intermediate image) by using a plurality of refraction elements for example, Japanese Patent Application No. 10-37011043 and Japanese Patent Application No.
  • the Z axis is taken parallel to the optical axis AX of the projection optical system PL
  • the X axis is taken parallel to the plane of Fig. 1 in the plane perpendicular to the optical axis AX
  • the Y axis is taken perpendicular to the plane of Fig. 1. Will be explained.
  • reticle R is held on reticle stage RST.
  • the stage RST positions the reticle R on the reticle base 31 within a predetermined range in the X direction, the Y direction, and the rotation direction.
  • the position of reticle stage RST (reticle R) is measured with high precision by a laser interferometer incorporated in reticle stage control system 12 and is based on the position information and control information from main control system 13.
  • the reticle stage control system 12 controls the positioning operation of the reticle stage RST.
  • the wafer W is held on a wafer stage WST via a wafer holder (not shown), and the wafer stage WST is two-dimensionally movably mounted on the wafer base 10.
  • the wafer stage WST positions the wafer W in the X direction and the Y direction by, for example, a linear motor method.
  • the position of wafer stage WST (wafer W) is measured with high precision by a laser interferometer built into wafer stage control system 11, and its position information and control information from main control system 13 are provided. Based on the above, the wafer stage control system 11 controls the positioning operation of the wafer stage WST.
  • the wafer stage WST has a focus position (optical axis
  • a position in the X direction) and a Z tilt drive mechanism to control the tilt angle are incorporated.
  • the focus position is measured at a plurality of measurement points on the surface of the wafer W by an auto focus sensor (not shown). Align the surface of W with the image plane of the projection optical system PL.
  • the illumination system control device 14 causes the laser light source 1 to emit the illumination light IL under the instruction of the main control system 13 at the time of exposure, and instructs the vibration reflecting mirror driving device 4a. Then, while the image of the pattern of the reticle R is being exposed on each shot area on the wafer, the vibration reflecting mirror 4 is continuously vibrated.
  • the wafer stage W is aligned after the wafer W is aligned.
  • the reticle R is illuminated with the illumination light IL from the illumination optical system 15 for a predetermined time to perform exposure, and then the next shot area on the wafer W is moved to the exposure area to perform exposure.
  • a reduced image of the reticle pattern is transferred to each shot area on the wafer W.
  • a semiconductor device is manufactured through processes such as development of a photoresist, etching of a light-shielding film, and stripping of a resist, followed by dicing and bonding.
  • the projection exposure apparatus of this embodiment can be of a step-and-scan type.
  • a reticle stage RST is also provided with a continuous moving mechanism in a predetermined scanning direction (Y direction). Is done. Then, the reticle R is illuminated by the illumination light IL from the illumination optical system 15 in a rectangular illumination area elongated in the X direction, and in synchronization with scanning the reticle R in the Y direction with respect to the illumination area, By scanning the wafer W in the Y direction with a projection ratio of [3] as the speed ratio, the image of the reticle scale pattern is sequentially transferred to each shot area on the wafer W.
  • magnesium fluoride (M g F 2) As a birefringent optical material.
  • quartz has been used as a birefringent optical material.
  • ordinary quartz greatly reduces the transmittance of vacuum ultraviolet light, especially when the wavelength is less than 180 nm. Has a considerably lower transmittance.
  • magnesium fluoride is a uniaxial crystal and exhibits optical anisotropy (birefringence), whereas fluorite and lithium fluoride are both cubic and exhibit birefringence. Since quartz glass is amorphous and does not exhibit birefringence because it is amorphous, magnesium fluoride is the most suitable optical material that has high transmittance in the vacuum ultraviolet region and exhibits birefringence at present.
  • the magnesium fluoride having a high transmittance at a wavelength of 1 5 0 wavelength has a 80% degree or more transmittance nm is 1 3 0 nm even 4 about 0% over more than
  • the exposure light is F 2 laser (Wavelength: 157 nm), and even a laser beam having a shorter wavelength (for example, a harmonic) can maintain a high transmittance.
  • Magnesium fluoride can also be used as a window material for vacuum ultraviolet light, but in such applications it is better not to cause birefringence.
  • the optical axis (optic axis), which is the axis of, is set to be approximately parallel to the optical path of the illumination light.
  • the birefringence of magnesium fluoride since the birefringence of magnesium fluoride is actively used, a state in which birefringence occurs for the illumination light, that is, the optical axis of the magnesium fluoride and the illumination light They differ in that they are installed in a direction perpendicular to the optical axis.
  • FIG. 2 shows a state in which the illumination light IL is incident on the prism 3.
  • the illumination light IL travels along the optical axis of the illumination optical system 15 (in this example, parallel to the Z axis).
  • the prism 3 is formed in a wedge shape whose thickness changes linearly in a direction perpendicular to the optical axis (in this example, a direction parallel to the X axis). It is set wider than the cross-sectional shape of the illumination light IL.
  • Magnesium fluoride constituting the prism 3 is birefringent. This is a uniaxial crystal with a characteristic, and is arranged in the illumination optical system 15 (see Fig.
  • each of the three axis directions of this crystal is parallel to the X axis, Y axis, and Z axis.
  • the ⁇ axis and the E axis indicate the direction of the ordinary ray component and the direction of the extraordinary ray component due to birefringence, respectively, and the 0 axis and the E axis are parallel to the X axis and the Y axis, respectively.
  • the optical axis of the prism 3 is parallel to the E axis (Y axis).
  • laser light is linearly polarized light due to a window material or the like provided to increase the reflectance of the resonator
  • the laser light source used in the projection exposure apparatus has a laser light inside a resonator.
  • Prisms and the like for reducing the chromatic aberration of the projection optical system are installed, and the band of the laser light is narrowed.
  • the laser light becomes stronger linearly polarized light, and the polarization direction depends on the installation angle of the prism installed in the resonator.
  • the illumination light IL of this example is also strong linearly polarized light, and its polarization direction is set in the direction indicated by the arrow 20.
  • the ⁇ axis (X axis) or E axis (Y axis) of the crystal of the prism 3 forms a predetermined inclination angle ⁇ ; with respect to the polarization direction of the illumination light IL indicated by the arrow 20, and the illumination optical system
  • the prism 3 is arranged so that the thickness of the prism 3 gradually changes in the direction (X direction) orthogonal to the optical axis of the prism.
  • the tilt angle may be any angle other than 0 ° and 90 °, but in order to greatly change the polarization state, the tilt angle is preferably closer to 45 °. Therefore, in this example, the inclination angle is set within a range of about 45 ° ⁇ 10 ° as an example.
  • the prism 3 By arranging the prism 3 so that the ⁇ axis or the E axis of the crystal of the prism 3 forms an inclination angle ⁇ ; with respect to the polarization direction when the illumination light IL is incident, it is possible to obtain the usual birefringence.
  • the polarization state of the illumination light I that is, the ellipticity in the polarization amplitude space representing the degree of polarization, is determined by the length of the optical path of the illumination light IL in the prism 3. It can be changed according to the thickness (thickness).
  • the polarization at the time of emission of the illumination light IL The light state will be different from the polarization state at the time of incidence. Since the thickness of the prism 3 changes gradually along the X direction, the polarization state of the illumination light IL emitted from the prism 3 changes gradually along the X direction.
  • FIG. 3 shows an example of a change in the polarization state of the light beams IL1 to IL4 in the linearly polarized illumination light IL incident on the prism 3.
  • the light beams IL1 to IL4 Since the length of each optical path (thickness of prism 3) is different from L1 to L4, the phase difference between ordinary ray and extraordinary ray due to birefringence when emitted from prism 3 is ⁇ 1 to ⁇ 4 Also change.
  • the light beam I L 1 is assumed to be emitted from the prism 3 as linearly polarized light (hereinafter referred to as “0 ° linearly polarized light”) indicated by an arrow 21 ⁇ .
  • the light beam IL 2 becomes, for example, an arrow 2
  • the light is emitted from prism 3 as clockwise circularly polarized light indicated by 1 B.
  • the phase difference ⁇ 3 of the light beam IL 3 is different from the phase difference ⁇ by 180 ° corresponding to 1 Z 2 wavelengths, the light beam IL 3 has a polarization direction of 1 with respect to the light beam IL 1.
  • linearly polarized light at 180 ° The light exits from the prism 3 as linearly polarized light indicated by an arrow 21 C different by 80 ° (hereinafter referred to as “linearly polarized light at 180 °”). Also, assuming that the phase difference (/) 4 of the light beam IL 4 is different from the phase difference ⁇ 2 by 270 ° corresponding to 3/4 wavelength, the light beam IL 4 is opposite to the light beam IL 2 The light is emitted from the prism 3 as left-handed circularly polarized light.
  • the polarization state of the illumination light IL emitted from the prism 3 is 0 ° linearly polarized light, clockwise circularly polarized light, and 18 ° sequentially along the direction (X direction) perpendicular to the optical axis of the illumination optical system. 0.
  • the tilt angle in FIG. 2 described above is not necessarily 45 °, but when the tilt angle ⁇ is 45 °, that is, in the middle of the directions of two crystal axes having different refractive indexes from each other.
  • the prism 3 is arranged so that the direction of the illumination light IL substantially matches the polarization direction of the illumination light IL, a part of the illumination light IL passing through the prism 3 is completely circularly polarized, so that the illumination light IL There is an advantage that the coherence can be efficiently reduced.
  • the illumination light lifting Chi a high transmittance to (F 2 laser) IL
  • the illumination optical system of FIG. 1 the flop rhythm 3 formed by magnesium fluoride is glass material of the birefringent 1
  • the illumination light IL By arranging the illumination light IL inside the reticle R, it is possible to suppress the occurrence of a spike in the illumination area of the reticle R without lowering the illuminance of the illumination light IL, thereby preventing the illumination light IL from deteriorating the uniformity of the illuminance distribution. Can be.
  • a reflector 2 in addition to the prism 3 made of magnesium fluoride, a reflector 2, an oscillating reflector 4, and a flywheel are used as optical elements for uniformizing the illuminance distribution.
  • Eye lenses 5A and 5B are provided to make the illuminance distribution of the illumination light IL more uniform.
  • the retarder (optical delay element) 2 is a partial optical delay element composed of a multiple reflection element composed of a semi-transparent mirror 2a and reflection mirrors 2b and 2c. About 1 to 2 of the light IL is reflected by the semi-transparent mirror 2 a and travels to prism 3. Then, the illumination light IL 5 transmitted through the semi-transparent mirror 2a is reflected by the reflection mirrors 2b and 2c, and its optical path again matches the illumination light directly reflected by the semi-transparent mirror 2a. I have.
  • the illumination light IL 5 transmitted through a has a longer optical path length than the illumination light directly reflected by the semi-transparent mirror 2 a, the illumination light IL traveling toward the prism 3 is allowed to pass through the retarder 2 by passing through the retarder 2. Interference can be reduced.
  • the vibration reflecting mirror 4 is also an optical element for reducing the occurrence of speckle.
  • the vibration reflecting mirror 4 By vibrating the vibration reflecting mirror 4 with the vibration axis at the very short period about the optical axis by the vibration reflecting mirror driving device 4a, the light path of the illumination light IL is vibrated within a small angle around the predetermined direction, and the vibration is very small.
  • the spatial responsiveness of the illumination light IL can be reduced.
  • the use of two-stage fly-eye lenses 5A and 5B makes the illuminance distribution of the illumination light IL more uniform.
  • the prism 3 made of magnesium fluoride in this example impairs the functions of the above-described optical elements (the retarder 2, the vibration reflecting mirror 4, and the fly-eye lenses 5A and 5B) for uniformizing the illuminance distribution. Needless to say, they can be used together.
  • magnesium fluoride was used as an optical material for forming the prism 3.
  • the glass material is birefringent and has a high transmittance to illumination light for exposure, it is used as the prism 3. It goes without saying that you can do it. As a result, the coherence of the illumination light can be reduced and the generation of speckles can be suppressed without lowering the illuminance of the illumination light as in the present example.
  • the prism 3 is a prism whose thickness changes in a one-dimensional direction, but other than that, the prism whose thickness changes in a two-dimensional direction, for example, intersects each other in a plane perpendicular to the optical axis of the illumination optical system.
  • a prism whose thickness changes gradually in two directions may be used.
  • a prism whose thickness changes in a high-order function of second order or more may be used.
  • a prism was used as a transmission type optical element that changes the polarization state.
  • the optical element may have any shape and configuration.
  • the retarder 2 and the vibration reflecting mirror 4 are used in addition to the prism 3.
  • the present invention is not limited to the combination of the retarder 2 and the vibration reflecting mirror 4.
  • a fly eye lens is used as an optical integrator (homogenizer). You may use it together.
  • the number of optical integrators arranged in the illumination optical system is not limited to two, but may be one or three or more.
  • a light source for generating light in the vacuum ultraviolet region eg if the wavelength 1 4 6 nm krypton dimer laser (K r 2 laser), wavelength 1 3 4 nm of K r A r laser, or a wavelength 1 2 6 nm It is also possible to use an argon dimer laser (Ar 2 laser).
  • optical path is shifted by disposing the prism 3 in the optical path of the illumination light IL, it is desirable to further dispose an optical member (prism or the like) for correcting this.
  • FIG. 4 shows an example of a semiconductor device manufacturing process.
  • a wafer W is manufactured from a silicon semiconductor or the like.
  • a photoresist is applied on the wafer W (step S10), and the next step S12 is performed.
  • the reticle R1 is loaded on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1), and the pattern (represented by the symbol A) of the reticle R1 is transferred to the entire shot area SE on the wafer W. Transfer (exposure) to The wafer W is, for example, a wafer (12-inch wafer) having a diameter of 300 mm.
  • a predetermined pattern is formed in each shot region SE of the wafer W by performing development, etching, ion implantation, and the like.
  • step S16 a photoresist is applied on the wafer W, and then in step S18, the reticle R2 is loaded on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1). Then, the pattern (represented by the symbol B) of the reticle R 2 is transferred (exposed) to each shot area SE on the wafer W. Then, in step S20, a predetermined pattern is formed in each shot region of the wafer W by performing development, etching, ion implantation, and the like of the wafer W.
  • step S22 a dicing process for separating each chip CP on the wafer W one by one, a bonding process and a packaging process (step S224), a semiconductor device as a product is obtained.
  • Chair SP is manufactured.
  • the application of the projection exposure apparatus according to the above-described embodiment is not limited to an exposure apparatus for manufacturing a semiconductor.
  • an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern to a square glass plate It can be widely applied to exposure equipment for manufacturing plasma display thin film magnetic heads, imaging devices (CCD, etc.), micro machines, and the like.
  • a reticle or a mask used in an exposure apparatus for manufacturing a device for manufacturing a semiconductor element or the like may be used, for example.
  • the projection exposure apparatus of the above-described embodiment can be suitably used also when manufacturing with an exposure apparatus using far ultraviolet light (DUV light) or vacuum ultraviolet light (VUV light).
  • DUV light far ultraviolet light
  • VUV light vacuum ultraviolet light
  • the present invention provides a step-and-stitch type reduction projection exposure apparatus that uses, for example, vacuum ultraviolet light or the like as exposure illumination light, or a projection optical system that uses vacuum ultraviolet light or the like as exposure light.
  • the present invention can be applied to a proximity type exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact.
  • a single-wavelength laser in the infrared or visible region oscillated from a DFB semiconductor laser or a fiber laser as exposure illumination light for example, erbium (Er) (or both erbium and ytterbium (Yb)) is used.
  • harmonics that have been amplified by a coupled fiber amplifier and wavelength-converted to ultraviolet light using a nonlinear optical crystal.
  • the oscillation wavelength of a single-wavelength laser is in the range of 1.544 to 1.553 / xm
  • the 8th harmonic in the range of 193 to 194 nm, that is, almost the same as the ArF excimer laser same wave length and comprising the ultraviolet light is obtained, when the oscillation wavelength 1. and 57 to 1.58 01 within the range of 1 0 harmonic in the range of 1. 57 to 1 58 nm, i.e. the F 2 lasers Ultraviolet light having substantially the same wavelength can be obtained.
  • the projection exposure apparatus includes an illumination optical system including a prism formed of a birefringent glass material that is transparent to illumination light and is made of birefringent glass material, such as magnesium fluoride described above.
  • the projection optical system is incorporated into the exposure apparatus body to perform optical adjustments, and a reticle stage or wafer stage consisting of a large number of mechanical parts is attached to the exposure apparatus body to connect wiring and piping for further comprehensive adjustment (electrical adjustment, operation Confirmation etc.). It is desirable that the projection exposure apparatus be manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
  • the spatial coherence of the illumination light is reduced, and the occurrence of speckle is suppressed, so that the deterioration of the uniformity of the illuminance distribution of the illumination light is suppressed. be able to. Therefore, exposure can be performed with a uniform illuminance distribution using illumination light in a vacuum ultraviolet region having a wavelength of 200 nm or less.
  • the polarization state of the illumination light can be gradually changed in a direction perpendicular to the optical axis of the illumination light, and the spatial The coherence can be reduced to suppress the occurrence of speckle, and the deterioration of the uniformity of the illuminance of the illumination light can be suppressed.
  • the second illumination optical device further includes the vibrating member and the optical integre, the illuminance distribution of the illumination light can be made more uniform.
  • a prism made of magnesium fluoride even when vacuum ultraviolet light is used, high illuminance uniformity and low extinction coefficient can be realized with almost no change in the entire apparatus.
  • the pattern of the mask is formed on the substrate with high precision, and the height of the device is further increased. Integration and high speed can be achieved.
  • a high-performance device can be manufactured with high throughput.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un procédé d'exposition permettant de réaliser une exposition avec une grande intensité d'éclairement uniforme au moyen d'une lumière d'exposition (IL) même si la lumière d'exposition (IL) est un faisceau laser dont la longueur d'onde se situe dans la région de l'ultraviolet extrême. La lumière d'exposition (IL), qui est un faisceau laser F2 linéairement polarisé émis par une source lumineuse (1), traverse un prisme (3), un miroir oscillant (4), des lentilles (5A, 5B), et un objectif condensateur (9), et éclaire un réticule (R). Le motif du réticule (R) est transféré sur une plaquette (W) avec un système optique de projection. Le prisme (3) est en fluorure de magnésium (MgF2) à l'état cristal, qui constitue un matériau vitreux biréfringent transparent au faisceau laser F2. Le prisme (3) présente une épaisseur qui varie graduellement selon un axe perpendiculaire à l'axe optique de la lumière d'exposition (IL), celui-ci étant disposé de manière à présenter une biréfringence par rapport à la lumière d'exposition (IL). La polarisation de la lumière d'exposition (IL) est soumise à une modification continue selon un sens prédéterminé dans un plan perpendiculaire à l'axe optique.
PCT/JP2000/002761 1999-04-28 2000-04-27 Procede et appareil d'exposition WO2000067303A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU41430/00A AU4143000A (en) 1999-04-28 2000-04-27 Exposure method and apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/122906 1999-04-28
JP12290699 1999-04-28

Publications (1)

Publication Number Publication Date
WO2000067303A1 true WO2000067303A1 (fr) 2000-11-09

Family

ID=14847549

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/002761 WO2000067303A1 (fr) 1999-04-28 2000-04-27 Procede et appareil d'exposition

Country Status (2)

Country Link
AU (1) AU4143000A (fr)
WO (1) WO2000067303A1 (fr)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002229216A (ja) * 2001-02-05 2002-08-14 Dainippon Printing Co Ltd 露光装置
WO2003003429A1 (fr) * 2001-06-28 2003-01-09 Nikon Corporation Systeme de projection optique, systeme d'exposition et procede
US6512780B1 (en) 1999-12-10 2003-01-28 Carl-Zeiss-Stiftung System for compensating directional and positional fluctuations in light produced by a laser
WO2004010483A1 (fr) * 2002-07-18 2004-01-29 Nikon Corporation Systeme optique d'eclairage, systeme d'exposition et procede d'exposition
US6870668B2 (en) 2000-10-10 2005-03-22 Nikon Corporation Method for evaluating image formation performance
WO2005041277A1 (fr) * 2003-10-28 2005-05-06 Nikon Corporation Dispositif optique d'eclairage et dispositif d'alignement de projection
JP2005289693A (ja) * 2004-03-31 2005-10-20 Nikon Corp 人工水晶部材、光学素子、光学系、投影露光装置、及び人工水晶部材の選別方法
EP1589379A2 (fr) * 2004-04-23 2005-10-26 Canon Kabushiki Kaisha Systeme d'éclairage optique, appareil d'exposition et procédé de fabrication d'un dispositif
JP2010226117A (ja) * 2003-11-20 2010-10-07 Nikon Corp 光束変換素子、照明光学装置、露光装置、および露光方法
US8339578B2 (en) 2004-01-27 2012-12-25 Nikon Corporation Optical system, exposure system, and exposure method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US8446579B2 (en) 2008-05-28 2013-05-21 Nikon Corporation Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US8462317B2 (en) 2007-10-16 2013-06-11 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8520291B2 (en) 2007-10-16 2013-08-27 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US8854601B2 (en) 2005-05-12 2014-10-07 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US8861084B2 (en) 2004-01-16 2014-10-14 Carl Zeiss Smt Ag Polarization-modulating optical element
US9097981B2 (en) 2007-10-12 2015-08-04 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9581911B2 (en) 2004-01-16 2017-02-28 Carl Zeiss Smt Gmbh Polarization-modulating optical element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02215117A (ja) * 1989-02-15 1990-08-28 Canon Inc 露光装置
JPH03254114A (ja) * 1990-03-05 1991-11-13 Nikon Corp 照明光学装置及びそれを備えた露光装置並びに露光方法
JPH1164778A (ja) * 1997-08-25 1999-03-05 Nikon Corp 照明光学装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02215117A (ja) * 1989-02-15 1990-08-28 Canon Inc 露光装置
JPH03254114A (ja) * 1990-03-05 1991-11-13 Nikon Corp 照明光学装置及びそれを備えた露光装置並びに露光方法
JPH1164778A (ja) * 1997-08-25 1999-03-05 Nikon Corp 照明光学装置

Cited By (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512780B1 (en) 1999-12-10 2003-01-28 Carl-Zeiss-Stiftung System for compensating directional and positional fluctuations in light produced by a laser
US7061671B2 (en) 2000-10-10 2006-06-13 Nikon Corporation Method for evaluating image formation performance
US6870668B2 (en) 2000-10-10 2005-03-22 Nikon Corporation Method for evaluating image formation performance
JP2002229216A (ja) * 2001-02-05 2002-08-14 Dainippon Printing Co Ltd 露光装置
JP4489982B2 (ja) * 2001-02-05 2010-06-23 大日本印刷株式会社 露光装置
WO2003003429A1 (fr) * 2001-06-28 2003-01-09 Nikon Corporation Systeme de projection optique, systeme d'exposition et procede
WO2004010483A1 (fr) * 2002-07-18 2004-01-29 Nikon Corporation Systeme optique d'eclairage, systeme d'exposition et procede d'exposition
US7307693B2 (en) 2002-07-18 2007-12-11 Nikon Corporation Illumination optical device, photolithography machine, and exposure method
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US9146474B2 (en) 2003-04-09 2015-09-29 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US9164393B2 (en) 2003-04-09 2015-10-20 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9140993B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
JP4543331B2 (ja) * 2003-10-28 2010-09-15 株式会社ニコン 照明光学装置及び投影露光装置
US9146476B2 (en) 2003-10-28 2015-09-29 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
JPWO2005041277A1 (ja) * 2003-10-28 2007-08-23 株式会社ニコン 照明光学装置及び投影露光装置
US9140992B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
WO2005041277A1 (fr) * 2003-10-28 2005-05-06 Nikon Corporation Dispositif optique d'eclairage et dispositif d'alignement de projection
TWI609409B (zh) * 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP2010192914A (ja) * 2003-10-28 2010-09-02 Nikon Corp 照明光学装置及び投影露光装置
JP4543341B2 (ja) * 2003-10-28 2010-09-15 株式会社ニコン 照明光学装置、投影露光装置、露光方法、及び電子デバイス製造方法
TWI573175B (zh) * 2003-10-28 2017-03-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
JP2008182266A (ja) * 2003-10-28 2008-08-07 Nikon Corp 照明光学装置、投影露光装置、露光方法、及び電子デバイス製造方法
US9244359B2 (en) 2003-10-28 2016-01-26 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9423697B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
KR101640327B1 (ko) 2003-10-28 2016-07-15 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2013191858A (ja) * 2003-10-28 2013-09-26 Nikon Corp 照明光学装置及び投影露光装置
JP2013211558A (ja) * 2003-10-28 2013-10-10 Nikon Corp 照明光学装置及び投影露光装置
JP2016053718A (ja) * 2003-10-28 2016-04-14 株式会社ニコン 照明光学装置及び投影露光装置
KR20140027559A (ko) * 2003-10-28 2014-03-06 가부시키가이샤 니콘 조명 광학 장치
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
JP2015008304A (ja) * 2003-11-20 2015-01-15 株式会社ニコン 光束変換素子、照明光学装置、露光装置、および露光方法
JP2016026306A (ja) * 2003-11-20 2016-02-12 株式会社ニコン 光束変換素子、照明光学装置、露光装置、および露光方法
JP2016212434A (ja) * 2003-11-20 2016-12-15 株式会社ニコン 光束変換素子、照明光学装置、露光装置、および露光方法
US9164209B2 (en) 2003-11-20 2015-10-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction
JP2011233911A (ja) * 2003-11-20 2011-11-17 Nikon Corp 光束変換素子、照明光学装置、露光装置、および露光方法
JP2010226117A (ja) * 2003-11-20 2010-10-07 Nikon Corp 光束変換素子、照明光学装置、露光装置、および露光方法
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US9316772B2 (en) 2004-01-16 2016-04-19 Carl Zeiss Smt Gmbh Producing polarization-modulating optical element for microlithography system
US8861084B2 (en) 2004-01-16 2014-10-14 Carl Zeiss Smt Ag Polarization-modulating optical element
US9581911B2 (en) 2004-01-16 2017-02-28 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US8339578B2 (en) 2004-01-27 2012-12-25 Nikon Corporation Optical system, exposure system, and exposure method
US8351021B2 (en) 2004-01-27 2013-01-08 Nikon Corporation Optical system, exposure system, and exposure method
US8436983B2 (en) 2004-01-27 2013-05-07 Nikon Corporation Optical system, exposure system, and exposure method
US9140990B2 (en) 2004-02-06 2015-09-22 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9429848B2 (en) 2004-02-06 2016-08-30 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9423694B2 (en) 2004-02-06 2016-08-23 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
JP2005289693A (ja) * 2004-03-31 2005-10-20 Nikon Corp 人工水晶部材、光学素子、光学系、投影露光装置、及び人工水晶部材の選別方法
EP1589379A2 (fr) * 2004-04-23 2005-10-26 Canon Kabushiki Kaisha Systeme d'éclairage optique, appareil d'exposition et procédé de fabrication d'un dispositif
EP2012183A3 (fr) * 2004-04-23 2011-11-02 Canon Kabushiki Kaisha Systeme d'éclairage optique, appareil d'exposition et procédé de fabrication d'un dispositif
US8854601B2 (en) 2005-05-12 2014-10-07 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9360763B2 (en) 2005-05-12 2016-06-07 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9310696B2 (en) 2005-05-12 2016-04-12 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9429851B2 (en) 2005-05-12 2016-08-30 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US9366970B2 (en) 2007-09-14 2016-06-14 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US9057963B2 (en) 2007-09-14 2015-06-16 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9097981B2 (en) 2007-10-12 2015-08-04 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8462317B2 (en) 2007-10-16 2013-06-11 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8508717B2 (en) 2007-10-16 2013-08-13 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8520291B2 (en) 2007-10-16 2013-08-27 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9057877B2 (en) 2007-10-24 2015-06-16 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US8446579B2 (en) 2008-05-28 2013-05-21 Nikon Corporation Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method
US8456624B2 (en) 2008-05-28 2013-06-04 Nikon Corporation Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
AU4143000A (en) 2000-11-17

Similar Documents

Publication Publication Date Title
WO2000067303A1 (fr) Procede et appareil d'exposition
US8111378B2 (en) Exposure method and apparatus, and device production method
JP5099933B2 (ja) 露光方法及び装置、並びにデバイス製造方法
JP4923370B2 (ja) 照明光学系、露光装置、及びマイクロデバイスの製造方法
US6597430B1 (en) Exposure method, illuminating device, and exposure system
JP4065923B2 (ja) 照明装置及び該照明装置を備えた投影露光装置、該照明装置による投影露光方法、及び該投影露光装置の調整方法
JP2001284228A (ja) 露光装置及びデバイス製造方法
TWI406107B (zh) 曝光設備和半導體裝置製造方法
JPH09288251A (ja) パルス幅伸長光学系および該光学系を備えた露光装置
JPWO2003023832A1 (ja) 露光方法及び装置、並びにデバイス製造方法
JP4178098B2 (ja) レチクルに形成されたパターンをウェハに投影させる光学システム、ウェハにイメージを形成する方法及びパターンのイメージをウェハ上に光学的に転写する方法
JP4095376B2 (ja) 露光装置及び方法、並びに、デバイス製造方法
JPH0194617A (ja) 半導体露光装置
KR20060039925A (ko) 조명 광학 장치, 노광 장치 및 노광 방법
JP2005166871A (ja) 照明光学装置、投影露光装置、露光方法及びデバイス製造方法
US20030147155A1 (en) Optical element holding device
US6335786B1 (en) Exposure apparatus
TWI232968B (en) Projection optical system, exposure apparatus and device fabrication method
JP2003090978A (ja) 照明装置、露光装置及びデバイス製造方法
JP2005116831A (ja) 投影露光装置、露光方法、及びデバイス製造方法
US7099087B2 (en) Catadioptric projection objective
JP2003051438A (ja) 反射部材及びその調整方法、露光装置及びその製造方法、並びにマイクロデバイスの製造方法
JP3452057B2 (ja) レーザ光の高調波発生装置、及びそれを用いた露光装置、並びにレーザ光の高調波発生方法、及びそれを用いた露光方法、それを用いたデバイス製造方法
JP6140290B2 (ja) マイクロリソグラフィー投影露光装置用光学システム及びマイクロリソグラフィー露光方法
JP2913725B2 (ja) 露光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
ENP Entry into the national phase

Ref country code: JP

Ref document number: 2000 616054

Kind code of ref document: A

Format of ref document f/p: F

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase