WO2000062056A1 - Halbleiter-gassensor mit gehäuse und verfahren zur messung von gaskonzentrationen - Google Patents
Halbleiter-gassensor mit gehäuse und verfahren zur messung von gaskonzentrationen Download PDFInfo
- Publication number
- WO2000062056A1 WO2000062056A1 PCT/DE2000/001105 DE0001105W WO0062056A1 WO 2000062056 A1 WO2000062056 A1 WO 2000062056A1 DE 0001105 W DE0001105 W DE 0001105W WO 0062056 A1 WO0062056 A1 WO 0062056A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- housing
- sensor element
- opening
- sensor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 68
- 230000035945 sensitivity Effects 0.000 description 5
- 230000009969 flowable effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical class [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/0037—NOx
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/0039—O3
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/004—CO or CO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
Definitions
- the present invention relates to a semiconductor gas sensor according to the preamble of claim 1, and a method for measuring gas concentrations with a semiconductor gas sensor.
- Carbon monoxide, nitrogen oxides and ozone which is a significant burden on the environment and the human body. To reduce these loads, it is necessary to measure or analyze the gases generated during combustion. In particular, by measuring the exhaust gases during operation, pollutant emissions can be reduced by appropriate feedback.
- Semiconductor gas sensors offer a possibility for gas analysis, in which a gas-sensitive layer, which changes its electrical resistance when exposed to certain gases, is brought to a certain measuring temperature. By measuring the electrical resistance of the sensitive layer at certain temperatures, different gas concentrations, for example of CO, NO, N0 2 or 0 3, can be determined.
- the gas-sensitive layer is in most cases a metal oxide layer, for example made of SnO 2 .
- a thin layer is made of Sn0 2 is arranged on a heating structure.
- a Si0 2 layer separates a heating element from the gas-sensitive Sn0 2 layer.
- the heating structure with the gas-sensitive layer is arranged on an Si 3 N 4 membrane, which in turn is mounted on a silicon substrate Exposure to the gas-sensitive layer with the gas Diffusion, or by flow to the sensor element.
- the sensor element with the gas-sensitive layer is arranged in a housing.
- the object of the present invention to provide a semiconductor gas sensor which has an improved time behavior. Furthermore, the gas sensor should be compact and inexpensive to manufacture. In addition, a method for measuring gas concentrations is to be specified, which shows an improved time behavior and enables accurate measurements.
- the semiconductor gas sensor according to the invention comprises a heatable sensor element for measuring gas concentrations, and a housing, in the interior of which the sensor element is arranged, the housing having a first opening which connects the interior to the exterior, and wherein one or more in the housing second openings are arranged which are lower than the first opening to drive a gas flow from the second opening to the first opening by convection.
- the second openings or gas inlet openings are preferably arranged in the lower part of the housing on its side walls, and the first opening can be arranged on the top of the housing.
- the second opening is or are preferably the second openings are arranged at the same height or lower than the sensor element. This results in a particularly favorable gas flow in the interior of the housing.
- the housing is preferably made of silicon using microtechnology.
- the sensor element can be integrated in two silicon troughs which lie one above the other or opposite one another, the second opening or the second openings being formed between the mutual boundary surfaces of the troughs.
- the first opening is formed in the silicon trough located above the sensor element.
- the second openings, which form the gas inlet openings, are preferably formed by passages or channels located between the silicon troughs.
- Flow-through elements for filtering or converting the gas can be arranged in the second opening or gas inlet openings.
- the flowable element has on its inner surfaces e.g. a material that the gas flowing through converts chemically and / or catalytically before it reaches the sensor element. This allows the sensitivity of the sensor to be set or changed for different gases.
- a method for measuring gas concentrations with a semiconductor gas sensor in which a gas flow is driven through a housing by convection, the gas flowing through the housing from the bottom up and passing a sensor element that generates a measurement signal dependent on the gas concentration.
- FIG. 1 schematically shows a first embodiment of the semiconductor gas sensor according to the invention in a sectional view
- Figure 2 schematically illustrates a further embodiment of the semiconductor gas sensor according to the invention.
- the semiconductor gas sensor in a preferred embodiment of the invention comprises a sensor element 1, which is accommodated in a housing 2.
- a housing 2 At the top 21 of the housing 2 there is an opening 3 which connects the interior 20 of the housing 2 with areas located outside the housing or with the exterior. Further openings 4a, 4b are arranged in the lower part of the housing 2.
- the sensor element 1 In measuring operation, the sensor element 1 is heated, which is why the air or the gas warms up and rises in the areas above.
- the gas can flow into the interior 20 from the outside through the further openings 4a, 4b, while it escapes through the opening 3 on the upper side.
- the gas flow through the interior of the sensor is driven by convection.
- a known sensor element is used as sensor element 1, as is described in detail, for example, in the above-mentioned article by B. Ruhland et al. It comprises a gas-sensitive layer, the electrical conductivity or resistance of which changes depending on the respective gas concentration. Metal oxide layers, in particular made of SnO 2, are suitable for this. On the sensitive layer of the Sensor element 1 means are arranged for measuring the electrical conductivity or the electrical resistance, for example in the form of a pair of contact electrodes.
- a heating element in the form of a platinum heating resistor is over a Si0 2 layer or
- Passivation layer coupled to the sensitive layer.
- a Si 3 N support membrane is located underneath to support the arrangement.
- the arrangement is stored on a wafer, in the present case on a silicon substrate.
- Thick-film sensors possible, which deliver a measurement signal depending on the respective gas with which they come into contact.
- the housing 2 is made of metal in the embodiment shown here. However, other materials are also possible, for example silicon.
- the upper part of the housing 2 can also be designed as a removable cover.
- the temperature of the sensor element 1 is set. For example, at relatively low temperatures of approx. 50 ° C to approx. 200 ° C there is a considerable sensitivity to NO 2 , whereas a suitable measuring temperature for CO is, for example, in the range from 300 ° C to 400 ° C.
- the different sensitivities at different temperatures make it possible to determine different gas components by means of an array of sensor elements 1 which are arranged in the lower part of the chamber 1.
- flowable elements 5a, 5b are arranged in the openings 4a, 4b, which form the gas inlet.
- the flowable elements 5a, 5b can, depending on the measurement purpose, serve for filtering the gas and / or for chemical and / or catalytic conversion of the gas. You are on this Purpose designed as a filter or provided with passages or holes. They can also be porous.
- a metal oxide for example Sn0 2
- the relatively high 0 3 sensitivity that occurs with thin sensitive layers of sensor element 1 can be compensated for or reduced.
- FIG. 2 shows schematically a cross section through a further embodiment of the present invention.
- the sensor element 10 is integrated in a housing 40 which is made of silicon.
- the housing 40 consists of a lower part 40a and an upper part 40b, which are each designed like a trough.
- Both housing parts 40a, 40b are shaped like a plate, a recess or recess 41a, 41b being structured in the central region of the respective plate in order to accommodate the sensor element 10.
- the two housing parts 40a, 40b lie one above the other in such a way that the cutouts 41a, 41b lie opposite one another and thus form the interior 50 of the housing 40.
- At an upper side of the housing 40 there is an opening 30 which forms the gas outlet.
- Passages 60a, 60b in the form of channels are formed between the housing parts 40a, 40b. These passages or further openings 60a, 60b form the gas inlet on the sides of the housing 40.
- the recesses 41a, 41b or troughs and the channels 60a, 60b can be produced by typical etching techniques which are known in silicon microtechnology . This results in a particularly cost-effective production with a compact design, which is suitable for series production.
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Food Science & Technology (AREA)
- Combustion & Propulsion (AREA)
- Medicinal Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000611069A JP2002541477A (ja) | 1999-04-14 | 2000-04-11 | ケース入り半導体ガスセンサとガス濃度測定方法 |
KR1020017012942A KR20020011379A (ko) | 1999-04-14 | 2000-04-11 | 하우징을 가진 반도체-기체 센서 및 기체 농도의 측정 방법 |
US09/958,957 US6736001B1 (en) | 1999-04-14 | 2000-04-11 | Device for the non-contact storage of components |
EP00938476A EP1192459A1 (de) | 1999-04-14 | 2000-04-11 | Halbleiter-gassensor mit gehäuse und verfahren zur messung von gaskonzentrationen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19916797.4 | 1999-04-14 | ||
DE19916797A DE19916797C2 (de) | 1999-04-14 | 1999-04-14 | Halbleiter-Gassensor mit Gehäuse und Verfahren zur Messung von Gaskonzentrationen |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000062056A1 true WO2000062056A1 (de) | 2000-10-19 |
Family
ID=7904506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/001105 WO2000062056A1 (de) | 1999-04-14 | 2000-04-11 | Halbleiter-gassensor mit gehäuse und verfahren zur messung von gaskonzentrationen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6736001B1 (de) |
EP (1) | EP1192459A1 (de) |
JP (1) | JP2002541477A (de) |
KR (1) | KR20020011379A (de) |
CN (1) | CN1347498A (de) |
DE (1) | DE19916797C2 (de) |
WO (1) | WO2000062056A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1936364A1 (de) * | 2006-12-20 | 2008-06-25 | AppliedSensor GmbH | Sensor und Herstellungsverfahren eines Sensors |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7255836B2 (en) * | 2003-03-13 | 2007-08-14 | Trustees Of Princeton University | Analytical sensitivity enhancement by catalytic transformation |
DE102011003291B4 (de) | 2011-01-28 | 2021-12-30 | Robert Bosch Gmbh | Betriebsverfahren für einen Gassensor und Gassensor |
JP6100771B2 (ja) * | 2011-07-13 | 2017-03-22 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | ガス検知器 |
GB2500238B (en) * | 2012-03-15 | 2014-04-30 | Crowcon Detection Instr Ltd | Passively cooled gas detector |
US9395344B2 (en) * | 2013-02-06 | 2016-07-19 | Veris Industries, Llc | Gas sensor with thermal measurement compensation |
DE102013204780A1 (de) * | 2013-03-19 | 2014-09-25 | Robert Bosch Gmbh | Abgasführungselement, Abgasmesseinrichtung für ein Fahrzeug und Verfahren zur Herstellung eines Abgasführungselements |
DE102013209469A1 (de) * | 2013-05-22 | 2014-11-27 | Siemens Aktiengesellschaft | Vorrichtung und Verfahren zum Erzeugen eines Gasstroms von einem Raum zu einem Gassensor |
DE102014203863A1 (de) * | 2014-03-04 | 2015-09-10 | Siemens Aktiengesellschaft | Sensor-Vorrichtung und Verfahren zur Analyse eines Gasgemischs in einem Prozessraum |
DE202014005420U1 (de) * | 2014-07-02 | 2014-08-01 | Siemens Aktiengesellschaft | Sensorvorrichtung zur Analyse eines Gasgemischs in einem Prozessraum |
JP6884041B2 (ja) * | 2017-06-07 | 2021-06-09 | アルプスアルパイン株式会社 | 照明一体型ガス検知器 |
DE102017131204A1 (de) | 2017-12-22 | 2019-06-27 | Tdk Electronics Ag | Sensorkomponente und Mobilkommunikationsvorrichtung einschließlich derselben |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4736618A (en) * | 1986-01-23 | 1988-04-12 | Ngk Insulators, Ltd. | Sensor probe |
US5055270A (en) * | 1988-11-23 | 1991-10-08 | Halitec Industries Corp. | Gas sensor |
US5505073A (en) * | 1993-07-22 | 1996-04-09 | Siemens Aktiengesellschaft | Sensor having a sensor element arranged in a housing |
US5549871A (en) * | 1993-01-21 | 1996-08-27 | Servomex Plc | Sensor for combustible gases |
DE19620180A1 (de) * | 1996-05-20 | 1997-01-23 | Ignaz Prof Dr Eisele | Reduzierung der Heizleistung von Gassensoren |
DE19708770C1 (de) * | 1997-03-04 | 1998-08-27 | Siemens Ag | Gassensor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607084A (en) * | 1968-12-02 | 1971-09-21 | Sun Electric Corp | Combustible gas measurement |
EP0095277A3 (de) * | 1982-05-26 | 1984-07-04 | City Technology Limited | Gasfühler |
DK151119C (da) * | 1984-04-24 | 1988-03-28 | Joergensen Aps Georg | Gasfoelerarrangement med foroeget sensivitet |
JP2000241382A (ja) * | 1999-02-22 | 2000-09-08 | Ngk Spark Plug Co Ltd | ガスセンサ |
-
1999
- 1999-04-14 DE DE19916797A patent/DE19916797C2/de not_active Expired - Fee Related
-
2000
- 2000-04-11 WO PCT/DE2000/001105 patent/WO2000062056A1/de not_active Application Discontinuation
- 2000-04-11 US US09/958,957 patent/US6736001B1/en not_active Expired - Fee Related
- 2000-04-11 EP EP00938476A patent/EP1192459A1/de not_active Withdrawn
- 2000-04-11 KR KR1020017012942A patent/KR20020011379A/ko not_active Application Discontinuation
- 2000-04-11 JP JP2000611069A patent/JP2002541477A/ja not_active Withdrawn
- 2000-04-11 CN CN00806254A patent/CN1347498A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4736618A (en) * | 1986-01-23 | 1988-04-12 | Ngk Insulators, Ltd. | Sensor probe |
US5055270A (en) * | 1988-11-23 | 1991-10-08 | Halitec Industries Corp. | Gas sensor |
US5549871A (en) * | 1993-01-21 | 1996-08-27 | Servomex Plc | Sensor for combustible gases |
US5505073A (en) * | 1993-07-22 | 1996-04-09 | Siemens Aktiengesellschaft | Sensor having a sensor element arranged in a housing |
DE19620180A1 (de) * | 1996-05-20 | 1997-01-23 | Ignaz Prof Dr Eisele | Reduzierung der Heizleistung von Gassensoren |
DE19708770C1 (de) * | 1997-03-04 | 1998-08-27 | Siemens Ag | Gassensor |
Non-Patent Citations (1)
Title |
---|
RUHLAND B ET AL: "Gas-kinetic interactions of nitrous oxides with SnO2 surfaces", SENSORS AND ACTUATORS B,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, vol. 50, no. 1, 15 July 1998 (1998-07-15), pages 85 - 94, XP004142107, ISSN: 0925-4005 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1936364A1 (de) * | 2006-12-20 | 2008-06-25 | AppliedSensor GmbH | Sensor und Herstellungsverfahren eines Sensors |
Also Published As
Publication number | Publication date |
---|---|
CN1347498A (zh) | 2002-05-01 |
DE19916797C2 (de) | 2001-08-16 |
US6736001B1 (en) | 2004-05-18 |
EP1192459A1 (de) | 2002-04-03 |
JP2002541477A (ja) | 2002-12-03 |
KR20020011379A (ko) | 2002-02-08 |
DE19916797A1 (de) | 2000-11-23 |
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