WO2000052528A3 - Masque sous forme de membrane monograin - Google Patents

Masque sous forme de membrane monograin Download PDF

Info

Publication number
WO2000052528A3
WO2000052528A3 PCT/DE2000/000708 DE0000708W WO0052528A3 WO 2000052528 A3 WO2000052528 A3 WO 2000052528A3 DE 0000708 W DE0000708 W DE 0000708W WO 0052528 A3 WO0052528 A3 WO 0052528A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
mask
membrane
resistant
state
Prior art date
Application number
PCT/DE2000/000708
Other languages
German (de)
English (en)
Other versions
WO2000052528A2 (fr
Inventor
Dieter Meissner
Original Assignee
Forschungszentrum Juelich Gmbh
Dieter Meissner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Dieter Meissner filed Critical Forschungszentrum Juelich Gmbh
Priority to EP00922424A priority Critical patent/EP1157308A2/fr
Publication of WO2000052528A2 publication Critical patent/WO2000052528A2/fr
Publication of WO2000052528A3 publication Critical patent/WO2000052528A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un masque, un procédé de production d'un masque, un masque ainsi produit, ainsi que des utilisations avantageuses de celui-ci. Ledit procédé comprend les étapes suivantes: on utilise une membrane monograin qui est constituée de particules photosensibles telles que, dans un premier état, elles sont résistantes vis-à-vis de la lumière, et que, dans un second état, elles ne sont pas résistantes vis-à-vis de la lumière; on fait passer la membrane monograin de l'état résistant à la lumière à l'état non résistant à la lumière; la membrane est ensuite exposée conformément à une structure prédéterminée; conformément à l'exposition, les particules s'échappent de la membrane monograin ou se dissolvent; et enfin, on fait passer la membrane de l'état photosensible à l'état non photosensible. Le masque est, en conséquence, constitué d'une membrane monograin présentant des structures définies. Elle est par exemple utilisée dans un procédé de sérigraphie ou de lithographie, ou bien pour la production d'électrodes. Selon ledit procédé, il n'est absolument pas nécessaire d'utiliser une laque photosensible, ce qui représente un avantage.
PCT/DE2000/000708 1999-03-03 2000-03-01 Masque sous forme de membrane monograin WO2000052528A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00922424A EP1157308A2 (fr) 1999-03-03 2000-03-01 Masque sous forme de membrane monograin

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19909187.0 1999-03-03
DE19909187A DE19909187C1 (de) 1999-03-03 1999-03-03 Monokornmembranmaske

Publications (2)

Publication Number Publication Date
WO2000052528A2 WO2000052528A2 (fr) 2000-09-08
WO2000052528A3 true WO2000052528A3 (fr) 2001-01-11

Family

ID=7899490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/000708 WO2000052528A2 (fr) 1999-03-03 2000-03-01 Masque sous forme de membrane monograin

Country Status (3)

Country Link
EP (1) EP1157308A2 (fr)
DE (1) DE19909187C1 (fr)
WO (1) WO2000052528A2 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6510097A (fr) * 1965-08-04 1967-02-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALTOSAAR ET AL: "monograin layers and membranes for photovoltaics", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,US,NEW YORK, IEEE, VOL. CONF. 25, PAGE(S) 877-880, ISBN: 0-7803-3167-2, XP002121609 *
LERCEL M J ET AL: "SELF-ASSEMBLED MONOLAYER ELECTRON-BEAM RESISTS ON GAAS AND SIO2", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 11, no. 6, 1 November 1993 (1993-11-01), pages 2823 - 2828, XP000423435, ISSN: 0734-211X *
PATENT ABSTRACTS OF JAPAN vol. 002, no. 072 (C - 014) 31 May 1978 (1978-05-31) *

Also Published As

Publication number Publication date
EP1157308A2 (fr) 2001-11-28
WO2000052528A2 (fr) 2000-09-08
DE19909187C1 (de) 2000-10-26

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