WO2000038322A1 - Tampon e/s protege contre les surtensions - Google Patents
Tampon e/s protege contre les surtensions Download PDFInfo
- Publication number
- WO2000038322A1 WO2000038322A1 PCT/EP1999/009357 EP9909357W WO0038322A1 WO 2000038322 A1 WO2000038322 A1 WO 2000038322A1 EP 9909357 W EP9909357 W EP 9909357W WO 0038322 A1 WO0038322 A1 WO 0038322A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- field
- effect transistor
- transistor
- control
- output
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
Definitions
- the present invention relates to an I/O buffer, and more specifically to a tristate I/O buffer, i.e. a buffer whose output can be in one of the three states: a first state in which the output is actively high, a second state in which the output is actively low and in a third state, also referred to as tristate, in which the output is inactive and this output has a high impedance with respect to the exterior.
- a tristate I/O buffer i.e. a buffer whose output can be in one of the three states: a first state in which the output is actively high, a second state in which the output is actively low and in a third state, also referred to as tristate, in which the output is inactive and this output has a high impedance with respect to the exterior.
- the present invention more specifically relates to an I/O buffer constructed as an IC or forming part of an IC.
- Such logic buffers are generally known and in the active state they produce at their outputs a logic HIGH/LOW level which depends on the logic level received at a data input.
- An important task of such a buffer is to supply a logic output signal to a load , while a preceding circuit which supplies the data signal is not or hardly loaded.
- LOW or "0" then corresponds to a first voltage level designated V ss and generally referred to as "ground” and HIGH or " 1" corresponds to a higher second voltage level designated V DD and generally referred to as "supply voltage”.
- V ss first voltage level
- V DD second voltage level
- supply voltage the output of the tristate buffer is connected to a bus to which at least one input of at least one other logic circuit is connected and to which also one or more outputs of other logic circuits are connected.
- the logic level of the bus is always determined by one of the connected logic circuits.
- the connected circuits are controlled in such a manner that only one of them can be in an active HIGH/LOW state, the other circuits then being in their tristates in which their outputs consequently present a high impedance with respect to the bus and thus hardly or not affects the HIGH/LOW level supplied by said one circuit.
- Logic circuits are designed for a predetermined supply voltage.
- a conventional value for this supply voltage is 5 V but recently circuits have been developed for lower supply voltages. Examples of such lower standard supply voltages are 3.0 V and 3.3 V. These circuits have been developed particularly for battery-powered systems such as, for example, a laptop, because the power consumption decreases as the supply voltage is lower.
- Another reason for the trend towards circuits with a low supply voltage is the fact that there is a continual tendency towards further miniaturization, which means that the dimensions of the circuit components are constantly reduced. When the supply voltage remains the same the circuit components are exposed to inadmissibly high field strengths.
- an apparatus may include several logic circuits designed for mutually different supply voltages.
- a reason for this may be, for example, that a version for a lower supply voltage has not yet been developed for a given circuit or that the performance of a version having a higher supply voltage is better.
- an I/O buffer is connected to a bus which is also connected to circuits which operate at a supply voltage higher than that of this buffer.
- a situation may the arise in which the buffer is in its tristate condition and the logic level of the bus is HIGH, which is caused by a circuit which operates at such a higher supply voltage, as a result of which the voltage level appearing at the output terminal of the I/O buffer is higher than its supply voltage level V DD .
- the I/O buffer therefore has a protection circuit which can prevent such an undesired current.
- Said protection circuit includes two PMOS transistors, one NMOS transistor and an inverter.
- the protection circuit is controlled by the control signal for the PMOS pull-up transistor and is consequently derived from the data signal. This has several disadvantages.
- the control signal for the PMOS pull-up transistor is supplied by a logic unit which in the circuit described in said publication is a NAND gate.
- this logic unit serves to control not the PMOS pull-up transistor but also the protection circuit, which implies that this logic unit must be capable of supplying comparatively large currents and should therefore be relatively overproportioned.
- the output of this logic unit is affected by the switching transients of not only the PMOS pull-up transistor but also those of the protection circuit, specifically those of the PMOS blocking transistor, which is arranged in series with the PMOS pull-up transistor.
- the protection circuit is controlled by a control signal derived from the data signal means that the protection circuit is switched from the on state to the off state comparatively frequently, which is attended by a comparatively high power dissipation. Moreover, this means that the known circuit responds comparatively slowly to changes of state, which implies a limitation of the frequency range.
- the gate of the PMOS blocking transistor is controlled via a second PMOS transistor.
- This second PMOS transistor has its gate connected to the internal supply voltage V DD -
- V DD the internal supply voltage
- the second PMOS transistor will not be driven into full conduction but will tend to keep the PMOS blocking transistor cut off by means of a leakage current.
- this will not wholly succeed, as a result of which a leakage current will also flow from the output to the internal supply V DD via the blocking transistor and the pull-up transistor. Since these transistors are larger than the second PMOS transistor this leakage current will also be larger than the leakage current through the second PMOS transistor.
- a major object of the present invention is to provide an overvoltage-protected I/O buffer with an improved performance.
- a further object of the present invention is to provide an I/O buffer having a smaller number of components.
- Another important object of the present invention is to provide an I/O buffer having a protection circuit, in which a control circuit for the protection circuit is derived exclusively from the enable signal.
- Figure 1 diagrammatically illustrates the basic principle of an I/O buffer
- Figure 2 diagrammatically illustrates the structure of a PMOS transistor
- Figure 3 shows the circuit diagram of a preferred embodiment of an I/O buffer in accordance with the present invention.
- FIG. 1 illustrates the basic principle of an I/O buffer, which as a whole bears the reference numeral 1.
- the buffer 1 comprises a PMOS pull-up field-effect transistor 10 having a source 11, a drain 12 and a gate 13, and an NMOS pull-down field-effect transistor 20 having a source 21, a drain 22 and a gate 23.
- the drain 12 of the PMOS pull-up transistor 10 and the drain 22 of the NMOS pull-down transistor 20 are connected to one another and to an output terminal 4 for supplying an output signal X.
- the source 11 of the PMOS pull-up transistor 10 is connected to a supply voltage V DD and the source 21 of the NMOS pull-down transistor 20 is connected to a reference voltage level Vss, referred to hereinafter as zero level.
- the PMOS pull-up transistor 10 and the NMOS pull-down transistor 20 are controlled by a control device 5 having two outputs 6 and 7.
- the first output 6 of the control device 5 is connected to the gate 13 of the PMOS pull-up transistor 10 and the second output 7 of the control device 5 is connected to the gate 23 of the NMOS pull-down transistor 20.
- the control device 5 has a first input 2 for receiving a data signal A, which input will also be referred to as the data input.
- the control device 5 has a second input 3 for receiving an enable signal E, which input is also referred to as the enable input.
- the value of the enable signal determines whether the mode of operation of the buffer 1 is "active" or "tristate". Depending on the implementation the active mode of the buffer 1 may be defined by an enable signal E whose value is HIGH and the tristate mode of the buffer 1 may be defined by an enable signal E whose value is low, or the other way around.
- the control device 5 is adapted to produce a LOW signal at its two outputs 6 and 7 in the active mode of the buffer 1 when the input signal A is HIGH. This causes the PMOS pull-up transistor 10 to be driven into conduction, while the NMOS pull-down transistor 20 is cut off, as a result of which the voltage at the output terminal 4 is pulled up to the level V DD .
- the control device 5 is further adapted to produce a HIGH signal at its two outputs 6 and 7 in the active mode of the buffer 1 when the input signal A is LOW. This causes NMOS pull-down transistor 20 to be driven into conduction, while the primary PMOS transistor is cut off, as a result of which the output voltage X at the output terminal 4 is pulled down to the level V S s-
- control device 5 is further adapted to supply a HIGH signal at its first output 6 and to supply a LOW signal at its second output 7, regardless of the value of the data signal A, as a result of which the pull-up transistor 10 and the pull-down transistors 20 are both turned off.
- the PMOS pull-up transistor 10 then forms a high impedance between the output 4 and the supply voltage V DD
- the NMOS pull-down transistor 20 forms a high impedance between the output 4 and the zero level Vss- If in this situation the output 4 of the buffer 1 is connected to a bus 30, which is also connected to the output of a second signal supply means 31 as well as the input of a signal processing means 32, the signal supply means 31 can supply its output signal to the signal processing means 32 without any problems, without being hindered by the connected buffer 1, because the output 4 forms a high impedance for the bus 30 and consequently does not load the output signal of the signal supply means 31.
- the signal supply means 31 operates at a supply voltage higher than the supply voltage V DD at which the buffer 1 operates, it may occur that the voltage level of the bus 30 is higher than the supply voltage V D D-
- the voltage level of the bus 30 is higher than the supply voltage V D D-
- i-e- the voltage at the drain 12 of the PMOS pull-up transistor 10 is higher than the voltage at the source 11 of this transistor, an undesired leakage current from the drain 12 to the source 11 and, consequently, from the output 4 to V DD , may occur, as will be explained hereinafter.
- CMOS technology a PMOS transistor is normally fabricated in an N-type well.
- a substrate as a whole bears the reference numeral 40.
- an N-type well 41 is formed in a surface portion of the substrate 40.
- two P+ regions 42 and 43 are formed, which are connected to a source terminal 52 and a drain terminal 53, respectively.
- a gate electrode 54 is arranged between the source terminal 52 and the drain terminal 53 and defines a channel region 44 between said two P+ regions 42 and 43 in the surface of the N-type well 41.
- an N+ region 45 is formed in the N-type well 41 and is connected to an N-well electrode 55, which is connected to the source electrode 52 by an electrical connection 56.
- the structure of such a PMOS transistor is, in principle, symmetrical, with the proviso that the P+ regions 42 and 43 are substantially identical, as a result of which, in principle, the source and drain terminals in a circuit may be interchanged.
- the N-well terminal 45 is connected to only one of these two P+ regions 42 and 43 and it is common practice to refer to the P+ region connected to the N+ type N-well terminal 45 as the source.
- the transition between the P+ region 42 and the N-well region 41 forms a parasitic POSITION junction 662, which will also be referred to hereinafter as the parasitic source junction 62.
- the transition between the P+ region 43 and the N-well region 41 forms a parasitic drain junction 63.
- FIG. 3 shows an embodiment of an I/O buffer 101 in accordance with the present invention, in which the an overvoltage protection circuit 110 is arranged between the drain 12 of the PMOS pull-up transistor 10 and the output 4.
- This overvoltage protection circuit 110 includes a PMOS blocking field-effect transistor 120, a first control field-effect transistor 130 of the PMOS type, and a second control field-effect transistor 140 of the NMOS type.
- the PMOS blocking transistor 120 has its drain 122 connected to the drain 12 of the PMOS pull-up transistor 10 and has its source 121 connected to the output 4.
- the first (PMOS) control transistor 130 has its drain 132 connected to the gate 123 of the PMOS blocking transistor 120 and has its source 131 connected to the output 4.
- the second (NMOS) control transistor 140 has its drain 142 connected to the gate 123 of the PMOS blocking transistor 120 and has its source 141 connected to ground Vss-
- the respective gates 133 and 143 of the two control transistors 130 and 140 receive the enable signal A.
- Figure 3 further shows the circuit diagram of an example of the control device 5.
- the control device 5 comprises a NAND gate 151, an AND gate 152 and an inverter 153.
- the NAND gate 151 receives the data signal and the enable signal E at its two respective inputs and its output forms the first output 6 of the control device 5 and is consequently connected to the gate 13 of the PMOS pull-up transistor 10.
- the AND gate 152 receives the enable signal E and the data signal A, inverted via the inverter 153, at its two respective inputs and its output forms the second output 7 of the control device 5 and is consequently connected to the gate 23 of the NMOS pull-down transistor 20.
- the level of the gate 143 of the second NMOS control transistor 140 is then HIGH, as a result of which the second NMOS control transistor 140 is conductive and the gate 123 of the PMOS blocking transistor 120 is pulled to a LOW level, as a result of which this PMOS blocking transistor 120 is also conductive.
- the level of the gate 133 of the first PMOS control transistor 130 is HIGH, as a result of which this transistor is cut off.
- the level at the output 4 is then HIGH.
- the level of the first output 6 of the control device 5 is HIGH, as a result of which the PMOS pull-up transistor 10 is cut off, and the level of the second output 7 of the control device 5 is LOW, as a result of which the NMOS pulldown transistor 20 is cut off.
- the level of the gate 143 of the second NMOS control transistor 140 is then LOW, as a result of which the second NMOS control transistor 140 is cut off.
- the level of the gate 133 of the first PMOS control transistor 130 is low, as a result of which the first PMOS control transistor 130 is turned on if external sources cause the voltage at the output 4 to increase, as a result of which the level of the gate 123 of the blocking transistor 120 is pulled up to the level of the source 121 of this, so that this blocking transistor 120 is cut off and the comparatively high voltage level of the output 4 cannot reach the PMOS pull-up transistor 10.
- a major advantage of the circuit proposed by the present invention is that the gates 151 and 152 of the control device 5 only have to control the pull-up and pull-down transistors 10 and 20 and are not loaded by components of the overvoltage protection circuit 110.
- Another major advantage of the circuit proposed by the present invention is that the switching state of the components of the overvoltage protection circuit 110 depends exclusively on the state of the enable signal E and not on the data signal A because the control voltage for the gates 133, 143 of the two control transistors 130, 140 are derived exclusively from the enable signal E.
- the overvoltage protection circuit 110 of the buffer 101 does not have any components whose switching state is to be changed in the active mode when the HIGH/LOW output state changes owing to a HIGH/LOW transition of the data signal A, as a result of which the buffer 101 can respond comparatively rapidly to changes of the data signal A and can therefore handle comparatively high frequencies.
- An further major advantage of the circuit proposed by the present invention is that in the tristate mode the gate 133 of the first PMOS control transistor 130 is constantly held at a LOW level by the enable signal E, as a result of which this first PMOS control transistor 130 is already turned on in the case of small increases of the voltage at the output 4, so that even for small increases of the voltage at the output 4 the gate 123 of the blocking transistor 120 is pulled up to the voltage level of the output 4 and, consequently, the blocking transistor 120 is already cut off for small voltage increases at the output 4.
- This is in contradistinction to the circuit known from WO94/29961, where the blocking transistor is not cut off until the voltage level at the output is higher than V DD plus the threshold voltage of the first control transistor.
- the overvoltage protection circuit 110 has only a very small number of components and that these components can be realized particularly simply during the fabrication of the buffer 101 without the necessity of additional fabrication steps. It will be evident to those skilled in the art that the scope of the present invention is not limited to the examples described hereinbefore but that various alterations and modifications thereof are possible without departing from the scope of the invention as defined in the appended Claims.
- control device 5 can be implemented in another manner.
- control device 5 can be modified simply by means of inverters and/or the use of OR/NAND gates in order to achieve the action described hereinbefore.
- the invention also relates to an inverting buffer whose output is HIGH when the data signal A is LOW, and the other way around, in the active mode.
- the invention can be used not only in a 3 V/5 V environment or 3.3 V/5 V environment but also in other voltage - level environments. Moreover, the invention is also useful if upon turn-off of a system the voltage of a supply line can decrease more rapidly than that of an output.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000590297A JP2002533971A (ja) | 1998-12-18 | 1999-12-01 | 過電圧保護i/oバッファ |
EP99961033A EP1057262A1 (fr) | 1998-12-18 | 1999-12-01 | Tampon e/s protege contre les surtensions |
KR1020007009002A KR20010040990A (ko) | 1998-12-18 | 1999-12-01 | 과전압 보호 i/o 버퍼 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98204343 | 1998-12-18 | ||
EP98204343.2 | 1998-12-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000038322A1 true WO2000038322A1 (fr) | 2000-06-29 |
Family
ID=8234497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1999/009357 WO2000038322A1 (fr) | 1998-12-18 | 1999-12-01 | Tampon e/s protege contre les surtensions |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1057262A1 (fr) |
JP (1) | JP2002533971A (fr) |
KR (1) | KR20010040990A (fr) |
WO (1) | WO2000038322A1 (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002071612A3 (fr) * | 2001-01-09 | 2003-05-30 | Broadcom Corp | Circuit d'entree/sortie submicronique supportant des tensions d'entree elevees tolerant d'importantes variations d'energie |
GB2384073A (en) * | 2001-10-30 | 2003-07-16 | Nec Corp | Portable information terminal |
US6850226B2 (en) | 2001-11-09 | 2005-02-01 | Nokia Corporation | Multifunction mobile communications device with slidable display screen |
US6859074B2 (en) | 2001-01-09 | 2005-02-22 | Broadcom Corporation | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off |
US7138836B2 (en) | 2001-12-03 | 2006-11-21 | Broadcom Corporation | Hot carrier injection suppression circuit |
CN100373300C (zh) * | 2005-12-16 | 2008-03-05 | 北京中星微电子有限公司 | 一种解决共享总线浮空导致io漏电的设计方法及装置 |
CN102257794A (zh) * | 2008-12-18 | 2011-11-23 | 诺基亚公司 | 具有滑动显示屏和屏幕划分构件的移动通信设备 |
EP2530842A1 (fr) * | 2011-06-03 | 2012-12-05 | Nxp B.V. | Circuit pour maintenir un bus tolérant à haute tension et procédé permettant de faire fonctionner ce circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1994018755A1 (fr) * | 1993-02-10 | 1994-08-18 | National Semiconductor Corporation | Etage de sortie |
JPH07202678A (ja) * | 1994-01-07 | 1995-08-04 | Kawasaki Steel Corp | 半導体集積回路 |
GB2305793A (en) * | 1995-09-29 | 1997-04-16 | Pmc Sierra Inc | A tri-state driver and circuit |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE69407587T2 (de) * | 1993-06-07 | 1998-07-23 | Nat Semiconductor Corp | Überspannungsschutz |
JPH0786910A (ja) * | 1993-09-10 | 1995-03-31 | Oki Electric Ind Co Ltd | 出力駆動回路 |
JP2901171B2 (ja) * | 1993-10-08 | 1999-06-07 | 日本電信電話株式会社 | ディープサブミクロンmosfet出力バッファ回路 |
US5418476A (en) * | 1994-07-28 | 1995-05-23 | At&T Corp. | Low voltage output buffer with improved speed |
JP3366484B2 (ja) * | 1995-03-27 | 2003-01-14 | 沖電気工業株式会社 | 出力ドライバ回路 |
JP3586985B2 (ja) * | 1996-08-26 | 2004-11-10 | 松下電器産業株式会社 | 半導体装置の出力回路 |
JP3544819B2 (ja) * | 1997-03-31 | 2004-07-21 | 株式会社 沖マイクロデザイン | 入力回路および出力回路ならびに入出力回路 |
JPH11317652A (ja) * | 1998-02-13 | 1999-11-16 | Matsushita Electric Ind Co Ltd | 出力回路 |
-
1999
- 1999-12-01 EP EP99961033A patent/EP1057262A1/fr not_active Withdrawn
- 1999-12-01 JP JP2000590297A patent/JP2002533971A/ja active Pending
- 1999-12-01 KR KR1020007009002A patent/KR20010040990A/ko not_active Application Discontinuation
- 1999-12-01 WO PCT/EP1999/009357 patent/WO2000038322A1/fr not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1994018755A1 (fr) * | 1993-02-10 | 1994-08-18 | National Semiconductor Corporation | Etage de sortie |
JPH07202678A (ja) * | 1994-01-07 | 1995-08-04 | Kawasaki Steel Corp | 半導体集積回路 |
GB2305793A (en) * | 1995-09-29 | 1997-04-16 | Pmc Sierra Inc | A tri-state driver and circuit |
Non-Patent Citations (1)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 1995, no. 11 26 December 1995 (1995-12-26) * |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7138847B2 (en) | 2001-01-09 | 2006-11-21 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit which accommodates large power supply variations |
US7292072B2 (en) | 2001-01-09 | 2007-11-06 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US6949964B2 (en) | 2001-01-09 | 2005-09-27 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US6847248B2 (en) | 2001-01-09 | 2005-01-25 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit which accommodates large power supply variations |
US6985015B2 (en) | 2001-01-09 | 2006-01-10 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US6856176B2 (en) | 2001-01-09 | 2005-02-15 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US6859074B2 (en) | 2001-01-09 | 2005-02-22 | Broadcom Corporation | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off |
US6914456B2 (en) | 2001-01-09 | 2005-07-05 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US6628149B2 (en) | 2001-01-09 | 2003-09-30 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
US7746124B2 (en) | 2001-01-09 | 2010-06-29 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (I/O) circuit |
WO2002071612A3 (fr) * | 2001-01-09 | 2003-05-30 | Broadcom Corp | Circuit d'entree/sortie submicronique supportant des tensions d'entree elevees tolerant d'importantes variations d'energie |
US7002379B2 (en) | 2001-01-09 | 2006-02-21 | Broadcom Corporation | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off |
GB2384073A (en) * | 2001-10-30 | 2003-07-16 | Nec Corp | Portable information terminal |
US6850226B2 (en) | 2001-11-09 | 2005-02-01 | Nokia Corporation | Multifunction mobile communications device with slidable display screen |
US7138836B2 (en) | 2001-12-03 | 2006-11-21 | Broadcom Corporation | Hot carrier injection suppression circuit |
CN100373300C (zh) * | 2005-12-16 | 2008-03-05 | 北京中星微电子有限公司 | 一种解决共享总线浮空导致io漏电的设计方法及装置 |
CN102257794A (zh) * | 2008-12-18 | 2011-11-23 | 诺基亚公司 | 具有滑动显示屏和屏幕划分构件的移动通信设备 |
CN102811047A (zh) * | 2011-06-03 | 2012-12-05 | Nxp股份有限公司 | 耐高压总线保持电路及操作电路的方法 |
EP2530842A1 (fr) * | 2011-06-03 | 2012-12-05 | Nxp B.V. | Circuit pour maintenir un bus tolérant à haute tension et procédé permettant de faire fonctionner ce circuit |
Also Published As
Publication number | Publication date |
---|---|
EP1057262A1 (fr) | 2000-12-06 |
JP2002533971A (ja) | 2002-10-08 |
KR20010040990A (ko) | 2001-05-15 |
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