WO2000038218A2 - Dispositif et procede de traitement de substrats - Google Patents

Dispositif et procede de traitement de substrats Download PDF

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Publication number
WO2000038218A2
WO2000038218A2 PCT/EP1999/008853 EP9908853W WO0038218A2 WO 2000038218 A2 WO2000038218 A2 WO 2000038218A2 EP 9908853 W EP9908853 W EP 9908853W WO 0038218 A2 WO0038218 A2 WO 0038218A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
container
overflow
edge
process container
Prior art date
Application number
PCT/EP1999/008853
Other languages
German (de)
English (en)
Other versions
WO2000038218A3 (fr
Inventor
Wolfgang Kroeber
Joachim Pokorny
Andreas STEINRÜCKE
Original Assignee
Steag Microtech Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19934298A external-priority patent/DE19934298A1/de
Application filed by Steag Microtech Gmbh filed Critical Steag Microtech Gmbh
Publication of WO2000038218A2 publication Critical patent/WO2000038218A2/fr
Publication of WO2000038218A3 publication Critical patent/WO2000038218A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Definitions

  • a treatment fluid is generally passed onto a substrate arranged on the substrate holder.
  • the flow to the substrate is essentially perpendicular to a substrate surface.
  • gas bubbles are trapped beneath the substrate, which impair good, uniform treatment of the substrate.
  • the uniform treatment can also be disrupted by a stall on a substrate surface spaced above the process container.
  • a device of the type mentioned is known for example from US-A-5,000 827.
  • a semiconductor wafer is held above the process container by means of a multiplicity of support members on which the afer rests and flowed from below with a treatment fluid which flows over an edge of the process container through a gap formed between the substrate and the process container wall.
  • the object of the present invention is to ensure a good and uniform treatment of substrates.
  • a special task is to flush out gas bubbles trapped beneath a substrate before and / or during treatment of a substrate.
  • this object is achieved by a device of the type mentioned above, in which an inner circumference widening outwards is provided for an edge of the container wall facing the substrate. Due to the outward widening inner circumference of the edge of the container wall facing the substrate, a flow of the treatment fluid is directed towards edge areas of a substrate located above it, in order to avoid areas of relative flow calmness there. This ensures a good flushing out of gas bubbles and a good, even treatment even in an area outside the inner dimensions of the container wall.
  • the thickness of the container wall tapers towards the edge in order to allow the opening of the process container to overlap as much as possible with the substrate above, while at the same time forming a sufficient flow channel between a part of the substrate holder surrounding the edge and the edge.
  • the taper is advantageously formed by contouring the outer circumference of the container wall in order to form a sufficient flow channel between the part of the substrate holder and the container wall.
  • the contouring of the outer circumference of the container wall is advantageously adapted to an inner circumferential shape of a carrier ring of the substrate holder in order to prevent the flow channel formed between them from changing too suddenly and the flow tearing off.
  • the device has an anode arrangement arranged inside the process container in order to apply a voltage between the substrate and the anode arrangement in order to promote the treatment process.
  • the anode arrangement is advantageously formed by a perforated plate or an expanded metal.
  • the latter has a funnel-shaped base which widens towards the substrate and which, according to one embodiment, is formed by an insert.
  • the funnel-shaped bottom could be formed in one piece with a vertical container wall. According to a particularly preferred embodiment of the invention, the funnel-shaped bottom forms part of the container wall.
  • At least one perforated plate is provided between a bottom of the process container and the edge of the container wall of the process container facing the substrate.
  • an overflow collar surrounding the process container is provided, which advantageously has an upwardly open space between the container wall of the process container and the
  • a further process container surrounding the process container is provided to collect the treatment fluid used.
  • the additional process container enables the treatment fluid used to be collected and possibly recycled.
  • the device is used as a metal plating device.
  • the above object is also achieved by a method for treating substrates, in particular semiconductor wafers, in which a substrate is moved into a first position above and at a distance from a container wall of a process container by means of a substrate holder, and a treatment fluid through the Process container is directed to a surface of the substrate facing the process container, wherein the treatment fluid is directed towards an outer region of the substrate via an outwardly widening inner peripheral surface of an edge of the container wall of the process container facing the substrate.
  • the substrate is advantageously raised into a second position which is further spaced from the edge of the container wall of the process container.
  • This lifting of the substrate leads to an enlargement of the flow channel formed between the substrate and the substrate carrier on the one hand and the process container on the other hand, in order after the flushing out of gas bubbles for a further treatment of the substrate a low flow speed and a more uniform flow between the inner and outer regions of the To provide substrate.
  • a voltage is applied between an anode arrangement located in the process container and the substrate in order to promote the treatment of the substrate.
  • the surface of the substrate facing the process container is advantageously electrically contacted.
  • the applied voltage is changed depending on the position of the substrate.
  • the applied voltage in the second position of the substrate is advantageously higher than in the first position. This has the advantage that, for example, deposition of a material on the substrate in the first position, in which the flow velocity is higher than in the second position, is prevented.
  • the flow directed onto the substrate is homogenized within the process container in order for a good and even treatment of the substrate to provide a homogeneous flow.
  • the homogenization is advantageously achieved via a funnel-shaped bottom of the process container and / or at least one perforated plate arranged in the process container.
  • a drain is opened in an overflow collar surrounding the edge of the process container, so that the treatment fluid can flow off freely and the blowing-out flow is not opposed.
  • the drain is advantageously closed in order to achieve an accumulation of treatment fluid.
  • the treatment fluid is advantageously dammed up until it reaches a height that is at least at the height of the raised substrate in order to ensure good contact between the treatment fluid and the substrate.
  • a further overflow is arranged adjacent to the overflow, so that the treatment fluid level in the overflow is limited to the further overflow in a simple manner by the height of the overflow edge.
  • a height-adjustable overflow rim is preferably provided in order to provide different treatment fluid levels in the overflow in a simple manner.
  • a floating body has the overflow edge. Due to its natural buoyancy, the floating body enables a particularly simple possibility of adjusting the height of the overflow edge.
  • a slide having the overflow edge is provided, via which the height of the overflow edge is adjusted.
  • the slide is preferably biased upwards by means of a spring and is easily adjustable against the spring preload.
  • a spacer is preferably provided between the floating body or the slide and the substrate holder, which specifies a predetermined distance between the floating body or the slide and the substrate holder. This results in a particularly simple possibility of setting the height of the overflow edge and thus the treatment fluid level directly via the movement of the substrate holder. In particular, this creates a fixed, essentially constant relationship between the Maintain the height of the overflow edge and the height of the substrate holder.
  • the object is achieved in a method for treating substrates with a treatment fluid, in which a substrate with a substrate holder is held over a basin surrounded by an overflow and flowed with the treatment fluid from below, in that the level of the Treatment fluid in the overflow is controlled depending on the distance between the substrate holder and the basin.
  • FIG. 1 shows a schematic cross-sectional view of a device according to the invention for treating substrates
  • Figure 2 is an enlarged partial view of the device according to the invention.
  • FIG. 3 shows a further enlarged partial view of a pot edge contour of a process container of the present invention
  • Figure 4 is a schematic cross-sectional view of an alternative embodiment of the device according to the invention.
  • FIGS. 5 and 6 are schematic cross-sectional views of a further exemplary embodiment of the device according to the invention in different treatment positions;
  • FIG. 1 shows a metal plating device 1, in particular a copper plating device, with a substrate holder 2 and a process container 3.
  • the substrate holder 2 consists of an upper cover 5 and a lower ring 6, between which a wafer 7 is clamped.
  • the substrate holder 2 can be raised and lowered vertically above the process container 3.
  • a seal 9 is provided on an inner circumference of the ring 6 and is arranged concentrically around a center point of the wafer 7.
  • the seal 9 seals an edge region of the wafer 7. This edge area of the wafer 7 is contacted via a plurality of contact springs 11, one of which can be seen in FIG. 3.
  • the process container 3 has a base plate 15 and side walls 16.
  • a line 18 is formed in the base plate 15, which is connected at one end via an opening 20 to a space formed between the side walls.
  • the line 18 is connected to a source of a liquid electrolyte via a connecting piece 22 connected to the line 18 and lines not shown.
  • One end of the line 18 spaced from the opening 20 is closed by a stop fenelement 24 closed, which is attached to a rod 26.
  • a stop fenelement 24 closed, which is attached to a rod 26.
  • a funnel element 30 is arranged between the side walls 16 and spaced apart from the base plate 15 and is fastened to the side walls 16 in a suitable manner, such as, for example, screws.
  • a chamber 32 is formed between the base plate 15 and the funnel element 30.
  • the funnel element 30 has a centered opening 34 facing the chamber 32 with a small diameter. Starting from the opening 34, the funnel element 30 forms a funnel-shaped space 36 that widens upward. Above the funnel-shaped space 36, a perforated plate 38 is provided which is in contact with an upper edge 39 of the funnel element 30. The perforated plate 38 rests on the upper edge 39 of the funnel element and is fastened to the side walls 16 in a suitable manner, for example by screws 40.
  • An upper wall part 44 is fastened on an end face 42 of the side wall 16 opposite the base plate 15.
  • the wall part 44 has openings 46 for the passage of electrical contact elements 48.
  • the contact elements 48 are in electrical contact with an anode plate 50 located above and spaced apart from the perforated plate 38, which is also designed as a perforated plate.
  • the anode plate 50 can be designed as an expanded metal.
  • the wall element 44 has a contoured inner peripheral surface 52.
  • the inner peripheral surface 52 is inclined in a lower region with respect to a longitudinal central axis. In a further region located above, the inner circumferential surface 52 is essentially parallel to the longitudinal central axis.
  • the circumference of the inner circumferential surface 52 increases due to an outwardly curved rounding 55.
  • the wall thickness of the wall element 44 tapers upwards to a tip 56, as can best be seen in FIG. 3 .
  • the taper is achieved by a bevelled outer contour 58 in the edge region 54 of the wall element 44.
  • This outer contour 58 is adapted to an inward-pointing contour of the seal 9 of the substrate holder 2.
  • An overflow collar 60 which surrounds the wall element 44, is attached to the wall element 44.
  • the overflow collar 60 forms an upwardly open space 62 between it and the wall element 44.
  • a controllable drain 64 is formed in a side wall of the overflow collar 60 and can be opened and / or closed as described below.
  • the side walls of the overflow collar 60 are higher than the uppermost tip 56 of the wall element 44.
  • the flow cross section in a region behind the tip 56 of the wall element 44 is kept as uniform as possible over a short distance in order to prevent the flow from breaking off in this region, thereby ensuring good air blowing out.
  • the substrate holder 2 is raised somewhat, since given the small distance between the substrate 7 and the tip 56, the flow rate would be too high for a homogeneous deposition of metal on the substrate, in particular in this area.
  • liquid electrolyte is accumulated in the overflow collar 60 at the same time as the overflow 64 is closed, so that the cover is at least partially absorbed in the liquid.
  • the liquid level is raised to the level of the wafer or beyond to ensure that the contact between the electrolyte and the wafer does not break due to the increased distance.
  • the distance between substrate 7 and tip 56 can be adjusted depending on the desired flow conditions for the deposition.
  • the funnel element 102 has a funnel 108 which widens upwards.
  • a lower opening 109 of the funnel 108 is closed by a connection element 110, via which treatment fluid is introduced into the funnel 108.
  • the connector 110 is attached to the funnel 108, for example, by welding or some other technique known in the art.
  • a support element 112, at least partially surrounding the funnel 108, is attached to the outer circumference of the funnel 108.
  • the funnel 108 has a greatly broadened wall thickness.
  • this area 114 at least one through opening 116 is provided for receiving or carrying through a contact pin 118, which will be described below.
  • a passage opening 120 is provided in the area 114, at the lower end of which a connection element 122 is attached.
  • a bore 124 is also provided in area 114. This serves to receive a fastening screw 126, for fastening the container wall 104 to the funnel element 102, as will be described in greater detail below.
  • the upper container wall 104 is covered by an inner wall
  • the inner container wall 128 and an outer overflow collar 130 are formed.
  • the inner container wall 128 is contoured in exactly the same way as the container wall 44.
  • a substantially U-shaped, upwardly open chamber 140 is formed between the inner container wall 128 and the overflow collar 130.
  • the overflow collar 130 surrounds the inner container wall 128 and is higher than this.
  • an opening 142 is formed, as well as a stepped bore 144, which is used for partially receiving and passing the screw 126.
  • the trich The terelement 102 and the container wall 104 are fastened to one another by the screw 126, which extends through the opening 144 in the container wall into the opening 124 in the funnel element.
  • the openings 144 and 124 for receiving the screw 126 are aligned with each other.
  • the openings 142 and 120 are also aligned with one another in order to form an outlet for the chamber 140 via the connection element 122.
  • a perforated plate 150 is clamped in between in suitably designed recesses. Furthermore, when screwing together, an upper side of the pin 118 extending through the widened region 114 of the funnel 108 is clamped against a lower side of a contact element 152 of an anode plate 154. This enables electrical contacting of an anode plate 154 located inside the process container from outside the process container.
  • a collecting container 106 is attached to the outer circumference of the widened region 114 of the funnel 108, such as, for. B. by welding.
  • the collecting container 106 surrounds a part of the funnel 108 and the upper container wall 104, the collecting container 106 having a wall which is higher than the overflow collar 130 of the container wall 104. Between the overflow collar 130 of the container wall 104 and the collecting container 106 a substantially U -shaped, upwardly open chamber 160 is formed, which has an opening, not shown, to which a connecting element 162 is attached.
  • the operation of the device according to this exemplary embodiment is described below with reference to FIGS. 5 and 6. wrote.
  • the substrate holder is brought into the position shown in FIG. 5 with a substrate held therein, so that a narrow gap is formed between a substrate held on the substrate holder and an upper edge of the container wall 128.
  • liquid electrolyte is introduced via the funnel element 102 until it flows into the chamber 140 through the above-mentioned gap between the substrate and the upper edge of the container wall 128. Due to the relatively small gap, air, which is enclosed by the bell shape of the substrate holder below the substrate, is blown out, as in the first exemplary embodiment.
  • a valve 170 connected to an outlet of the chamber 140 is opened in order to ensure a good drainage of the overflowing electrolyte, so that there is no resistance to the flow in the region of the above-mentioned gap.
  • the substrate carrier is raised to the position shown in FIG. 6 and the valve 170 is closed, so that the one flowing into the chamber 140 flows
  • Electrolyte accumulates there.
  • the electrolyte is dammed up until it flows into the outer chamber 160 via the outer overflow collar 130.
  • the level of the treatment fluid in the chamber 140 is raised so that it lies at the level of the substrate from which flow flows from below. This ensures reliable contact between the treatment fluid and the substrate, which could otherwise break off when the substrate carrier is lifted.
  • FIGS. 7 and 8 show a further exemplary embodiment of the present invention.
  • the exemplary embodiment of FIGS. 7 and 8 is essentially the same as that Embodiment of Figures 4 to 6 and therefore the same reference numerals are used in the following.
  • FIGS. 7 and 8 each show two different overflow elements, namely an overflow element designed as a floating body 180 on the left side and a spring-loaded slide 182 on the right side.
  • an overflow element designed as a floating body 180 on the left side
  • a spring-loaded slide 182 on the right side.
  • FIGS. 7 and 8 show two different height-adjustable overflow elements, namely an overflow element designed as a floating body 180 on the left side and a spring-loaded slide 182 on the right side.
  • a uniform overflow element is provided, which is designed either as a floating body 180 or as a spring-loaded element 182.
  • the floating body 180 will now be described in more detail below.
  • the floating body 180 extends around the chamber 140 and is guided on the inner circumference of the outer wall 130.
  • the floating body 180 forms an internal chamber 184 which is essentially rectangular in cross section and is closed.
  • the closed volume of the chamber 184 generates the necessary buoyancy of the floating body 180 in a fluid.
  • the floating body 180 has an overflow flange 186 which extends upwards and tapers upwards to an overflow edge 188.
  • the overflow flange 186 has an inner circumference that is larger than the outer circumference of the substrate carrier 2, so that it can be received radially in the overflow flange 186.
  • the floating body 180 also has a spacer 190 in the form of a web, which is arranged within the inner circumference of the overflow flange 186 and is contacted by an underside of the substrate carrier 2, as shown in FIGS. 7 and 8.
  • a spacer 190 in the form of a web, which is arranged within the inner circumference of the overflow flange 186 and is contacted by an underside of the substrate carrier 2, as shown in FIGS. 7 and 8.
  • the float 180 floats in the chamber until the spacer 190 comes into contact with the underside of the substrate carrier 2.
  • the overflow flange 186 extends radially around the substrate holder 2 and forms an overflow edge 188 which lies essentially on the same plane as a substrate accommodated in the substrate holder 2.
  • the overflow edge 188 is in height above an upper edge of the outer container wall 130 'so that treatment fluid introduced into the chamber 140 flows into the chamber 160 via the overflow edge 188 when the valve 170 is closed.
  • the float 180 follows the movement of the substrate carrier 2, due to the buoyancy of the float 180.
  • the level of the treatment fluid in the chamber 140 is always kept at the level of the substrate located in the substrate carrier 2, since the float of every movement of the substrate carrier follows. This results in a simple and stepless height adjustment of the overflow edge 188 for the chamber 40 depending on the distance between the substrate 7 and the inner container wall 128.
  • the floating body 180 is shown to have a substantially closed hollow chamber 184 as a buoyancy body, the floating body 180 can also have a different shape and be made from a solid material with good buoyancy, such as styrofoam.
  • the overflow element 182 has a base body 192 with an outer circumference which is adapted to the inner circumference of the outer container wall 130 'and is guided through the wall 130' in a substantially vertically displaceable manner.
  • the base body 192 has an upper section that tapers to an overflow edge 194.
  • the overflow element 182 has a support flange 196 which extends essentially vertically radially inwards.
  • the support flange 196 is angled 90 degrees downward at the radially inner end to form a pocket for receiving a spring 198, the function of which will be explained in more detail below.
  • a spacer extends from the support flange 196 at a right angle 200 upwards, which, like the spacer 190, sets a predetermined distance between the height-adjustable overflow element 182, in particular the overflow edge 194 and the substrate holder 2.
  • the spring 198 is a compression spring and, as can be seen in FIGS. 7 and 8, it is arranged between a bottom of the chamber 140 and an underside of the support flange 196 and is suitably fastened to it.
  • the spring 198 pushes the overflow element 182 upwards until the spacer 200 comes into contact with an underside of the substrate holder 2.
  • the upward movement of the overflow element is limited by a stop, not shown.
  • the overflow edge 194 lies essentially at the same level as a substrate accommodated in the substrate holder 2.
  • the operation of the device according to the exemplary embodiments in FIGS. 7 and 8 is essentially the same as in the exemplary embodiment in FIGS. 4 to 6.
  • the substrate is first brought into the position shown in FIG. 7 and the flow of treatment fluid flows from below, see above that treatment fluid flows into chamber 140.
  • the treatment fluid is discharged from the chamber 140 via the Valve 170 drained.
  • the valve 170 is then closed so that the treatment fluid accumulates in the chamber 140.
  • a floating body as a height-adjustable overflow element, it floats until it comes into contact with the substrate carrier, as shown in FIG. With the spring-biased overflow element, contact with the substrate carrier is achieved from the start by the spring biased upwards.
  • the substrate carrier 2 is raised in order to enlarge the gap between the substrate and the inner container wall 128.
  • the height-adjustable overflow element 180 or 182 follows the movement of the substrate carrier, so that the respective overflow edge 188 or 194 lies at the height of the substrate received in the substrate carrier 2.
  • an essentially stepless adjustment of the overflow edges 188 and 194, which follows the position of the substrate carrier 2 is possible.
  • the process container 3 can be formed in one piece and the space 32 below the funnel element 30 could be omitted.
  • the funnel element and / or the perforated plate 30 can also be omitted in certain applications.
  • the device is not limited to the metal plating of wafers. It is also suitable for plating other substrates or for other treatment processes.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Coating Apparatus (AREA)

Abstract

Dispositif et procédé de traitement de substrats, en particulier de tranches de semi-conducteur, destinés à éliminer les bulles de gaz enfermées sous un substrat avant et/ou pendant le traitement dudit substrat. Ledit dispositif comporte une cuve de processus possédant une paroi de cuve et un porte-substrat placé mobile au-dessus de la cuve de processus. Dans ledit dispositif, un bord faisant face au substrat de la paroi de cuve possède une circonférence interne qui s'élargit vers l'extérieur. Du fluide de traitement est orienté par-dessus ce bord vers une zone externe du substrat. Dans un dispositif de traitement de substrats doté d'une cuve pouvant être remplie de fluide de traitement, d'un trop-plein entourant la cuve et d'un porte-substrat destiné à placer un substrat au-dessus de la cuve, un dispositif de régulation du niveau de fluide de traitement dans le trop-plein en fonction de l'écart entre le porte-substrat et la cuve permet un traitement plus homogène des substrats.
PCT/EP1999/008853 1998-12-22 1999-11-18 Dispositif et procede de traitement de substrats WO2000038218A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19859470 1998-12-22
DE19859470.4 1998-12-22
DE19934298A DE19934298A1 (de) 1998-12-22 1999-07-21 Vorrichtung und Verfahren zum Behandeln von Substraten
DE19934298.9 1999-07-21

Publications (2)

Publication Number Publication Date
WO2000038218A2 true WO2000038218A2 (fr) 2000-06-29
WO2000038218A3 WO2000038218A3 (fr) 2000-09-14

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PCT/EP1999/008853 WO2000038218A2 (fr) 1998-12-22 1999-11-18 Dispositif et procede de traitement de substrats

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WO (1) WO2000038218A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394622B2 (en) 2012-11-16 2016-07-19 Atotech Deutschland Gmbh Device and method for the treatment of flat material to be treated
US10711364B2 (en) 2013-11-06 2020-07-14 Lam Research Corporation Uniform flow behavior in an electroplating cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107164798A (zh) * 2017-06-13 2017-09-15 浙江明泉工业装备科技有限公司 新能源汽车车身电泳装置的电泳槽

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443707A (en) * 1992-07-10 1995-08-22 Nec Corporation Apparatus for electroplating the main surface of a substrate
EP0869549A2 (fr) * 1997-03-31 1998-10-07 Shinko Electric Industries Co. Ltd. Formation de perles de soudure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443707A (en) * 1992-07-10 1995-08-22 Nec Corporation Apparatus for electroplating the main surface of a substrate
EP0869549A2 (fr) * 1997-03-31 1998-10-07 Shinko Electric Industries Co. Ltd. Formation de perles de soudure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394622B2 (en) 2012-11-16 2016-07-19 Atotech Deutschland Gmbh Device and method for the treatment of flat material to be treated
US10711364B2 (en) 2013-11-06 2020-07-14 Lam Research Corporation Uniform flow behavior in an electroplating cell

Also Published As

Publication number Publication date
WO2000038218A3 (fr) 2000-09-14
TW447034B (en) 2001-07-21

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