WO2000036192A1 - Procede de production d'un silicium monocristallin, silicium monocristallin et plaquette de silicium produits selon le procede - Google Patents

Procede de production d'un silicium monocristallin, silicium monocristallin et plaquette de silicium produits selon le procede Download PDF

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Publication number
WO2000036192A1
WO2000036192A1 PCT/JP1999/006949 JP9906949W WO0036192A1 WO 2000036192 A1 WO2000036192 A1 WO 2000036192A1 JP 9906949 W JP9906949 W JP 9906949W WO 0036192 A1 WO0036192 A1 WO 0036192A1
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WIPO (PCT)
Prior art keywords
crystal
furnace
region
pulling
silicon single
Prior art date
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PCT/JP1999/006949
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English (en)
Japanese (ja)
Inventor
Makoto Iida
Masanori Kimura
Shozo Muraoka
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Shin-Etsu Handotai Co., Ltd.
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Publication of WO2000036192A1 publication Critical patent/WO2000036192A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)

Definitions

  • the present invention adjusts the furnace internal structure in order to produce a silicon single crystal having few crystal defects, and calculates a method or an appropriate furnace internal structure for adjusting the furnace internal structure.
  • the present invention relates to a method for searching for silicon, and a method for producing a silicon single crystal using the method. Background art
  • the V region is a region where there are many vacancies, that is, depressions and holes generated due to lack of silicon atoms, and an I region. Is the region where dislocations and extra silicon atom clusters are generated due to the presence of extra silicon atoms, and the V region and I region Between Means that there is a neutral (Neutra 1, hereafter sometimes abbreviated as N) region with no (small) atom shortage or excess. And, the above-mentioned green-in defects (FPD, LSTD, COP) are all developed when V and I are in a supersaturated state. It has been found that even if there is a deviation, if it is below saturation, it does not exist as a defect.
  • the degree of these two-point defects is determined by the relationship between the crystal pulling rate (growth rate) in the CZ method and the temperature gradient G near the solid-liquid interface in the crystal, and the boundary between the V region and the I region.
  • a defect called 0 SF Oxidation Induced Stacking Fault
  • OSF ring sometimes abbreviated as 0R.
  • HZ hot zone
  • L / D Large D islocation: abbreviation for lattice dislocation loop, LSEPD, LFPD, etc.
  • LSEPD lattice dislocation loop
  • LFPD LFPD
  • the N-region exists obliquely to the direction of the growth axis when the pulling speed is reduced from high speed to low speed in the usual method, and therefore, it is partially formed in the wafer surface. Or did not exist.
  • the type of point defect is V / G, which is the ratio of the pulling rate (V) to the temperature gradient (G) in the crystal-solid interface axial direction. He claims to determine the total concentration. Considering this, the pulling speed should be almost constant in the plane (g direction of the crystal), so that G has a radial distribution in the plane. At a high pulling speed, no crystal could be obtained that had a V-rich region at the center, an I-rich region around the N-region, and an N-region. Therefore, recently, the distribution of G in the plane was improved, and this N- region, which existed only a little diagonally, was raised, for example, while the pulling speed V was gradually reduced.
  • N can be achieved to some extent by maintaining the pulling speed when the area spreads sideways. Also, taking into account that G changes as the crystal grows, adjust the pulling speed so that V / G remains constant, by compensating for it. For example, the crystal as the entire N-region can be expanded in the growth direction. This entire N-region crystal has no green-in defects and good oxide film breakdown voltage characteristics.
  • the present invention has been made in view of such a problem, and for example, it has been made Developed an appropriate repair method and a method to find a groove in the furnace that can respond to any change in single crystal manufacturing conditions such as when the pulling speed deviates from the set value.
  • the aim is to produce crystals under stable conditions.
  • the present invention has been made in order to speed up the above-mentioned S-type, and therefore, at least in the growth direction when a silicon single crystal is produced by the Chioclarsky method.
  • the crystal is pulled up so that the entire surface in the ⁇ 3 ⁇ 4 direction of the crystal becomes an N-region, the manufacturing conditions other than the internal structure of the pulling furnace change, and the solid-liquid interface in the crystal
  • the radial distribution of the temperature gradient G (temperature change ⁇ crystal axial length) [° C / mm] from the nearby melting point to 140 ° C is inclined, and therefore the crystal pulling speed is reduced.
  • the internal structure of the pulling furnace is adjusted to reduce the radial inclination of G, and the V / G value is set to a value such that the entire surface in the radial direction is in the N-region.
  • the crystal when the crystal is pulled so that the entire surface in the radial direction of the crystal is at least partly in the growth direction to be the N- region, manufacturing conditions other than the furnace internal structure of the pulling furnace are used. If the G value fluctuates and the radial distribution of G slopes, so that the V-no G value is no longer in the N-region over the entire surface in the radial direction, the method of correcting this is By adjusting the internal structure to reduce the radial gradient of G, the V / G value can be made to be in the N-region over the entire surface in the radial direction. It is possible to stably produce a single crystal of con.
  • the internal structure of the pulling furnace is adjusted by providing an annular solid-liquid interface heat insulating material on the outer periphery of the solid-liquid interface of the crystal and adjusting the distance S [mm] between the lower end of the heat insulating material and the melt surface. It is desirable to do this by adjusting.
  • the present invention relates to a method of manufacturing a silicon single crystal by the Chiochralsky method of applying a magnetic field, wherein the structure in the furnace is adjusted in response to a change in magnetic field strength.
  • This is a method for producing a silicon single crystal characterized by the following.
  • the magnetic field strength may be varied.
  • the internal structure of the furnace is adjusted in response to a change in crystal rotation speed.
  • the crystal rotation speed needs to be varied in order to improve the in-plane distribution and the like, and if the furnace internal structure is appropriately adjusted in response to this variation, the N ⁇ It is possible to manufacture silicon single crystals to be used as regions.
  • the pulling speed is gradually increased using at least two or more types of in-furnace structures under the manufacturing conditions.
  • the entire surface in the radial direction becomes an N-region at a certain pulling speed.
  • the actual G value shows the entire surface in the radial direction. This makes it easy to select a furnace structure that will be flat.
  • the present invention provides an analysis using a Schumi-Layer that can accurately calculate the effect of changes in the radial distribution of G due to changes in manufacturing conditions other than the furnace internal structure.
  • This is a method for producing a silicon single crystal, characterized by finding an in-furnace structure that becomes an N-region over the entire surface in the radial direction.
  • the present invention cannot accurately calculate the effect of a change in the radial distribution of G due to a change in manufacturing conditions other than the furnace internal structure, or cannot perform such a comparison. If you use a simulator that does not perform the Adjust the pulling speed V of the crystal pulled under these conditions by adjusting to the experimental results obtained before the fluctuations, or searching for conditions that match the breaking results. Calculate the V / G value obtained by dividing by G obtained from the analysis, and quantify the VZG value at each boundary of the radial and axial defect distribution of the glow-in defect.
  • the present invention gradually reduces the pulling speed from a high speed to a low speed, or reduces the pulling speed from a low speed in the radial and axial defect distribution diagrams of green-in defects.
  • the inner line of the 0 SF ring, the outer line of the ⁇ SF ring, V — rich region N — region and I-rich region N Quantify at least one of the boundary lines of the region and at least one of the lines where dislocation loops begin to occur by V / G values, and
  • V / G value and pulling speed obtained earlier are used to determine the G at each boundary position in the crystal ⁇ direction.
  • the present invention relates to a method for producing a silicon single crystal by the Chiral key method, by controlling the temperature distribution and the pulling speed in a pulling furnace and at least in the radial direction of the crystal.
  • the furnace is below the maximum AG corresponding to the minimum pulling speed fluctuation width ⁇ V [mm / min] unique to each pulling furnace.
  • the furnace internal structure corresponding to the fluctuation range of the pulling speed specific to each pulling furnace is specified, and the N— region formed in the radial direction of the crystal is expanded in the axial direction of the crystal.
  • an extremely low defect silicon single crystal which is an N— region in the entire single crystal rod.
  • a G — 6.5 A V -l- 0. 1 7 8 5
  • the crystal is pulled up by adjusting the internal structure of the furnace so that it is less than the G [° C / mm] value, the height of the N-region in the axial direction can be further stabilized and increased. High quality silicon single crystal can be manufactured.
  • the present invention when a silicon single crystal is produced by the Chiral key method, at least a part in the growth direction, and the entire surface in the radial direction of the crystal is an N—region.
  • the internal structure of the pulling furnace fluctuates, the radial distribution of the temperature gradient G is inclined, and the V / G value is in the N- region.
  • the manufacturing conditions other than the furnace structure are adjusted to adjust the G conditions.
  • Diameter If the directional gradient is made small and the V / G value is set so that it becomes N-region over the entire surface in the ⁇ ⁇ direction, a single-piece silicon product that becomes ⁇ -region over the entire surface in the radial direction is formed. can do .
  • the manufacturing conditions to be adjusted can be the magnetic field strength and the crystal rotation speed.
  • a silicon single crystal when a silicon single crystal is manufactured by the Chiral Clarke method, at least a part of the crystal in the growth direction and the entire surface of the crystal in the g direction is N—.
  • the rotation speed of the crucible was changed, and if the crystal pulling speed to obtain the N— region changed, the N— region was changed accordingly.
  • This is a method for producing a silicon single crystal which is characterized by changing a crystal pulling speed for obtaining the same.
  • the effect of the change in the magnetic field strength and the crystal rotation speed on the temperature gradient G is different from that in the case of G. If the pulling speed is changed, if the pulling speed is changed, the absolute value of the value will change or the oxygen concentration will change.
  • a silicon single crystal serving as an N-region can be formed over the entire surface.
  • the present invention is a silicon single crystal produced by the above method.
  • the extremely low-defect silicon has a N-region over the entire surface in the radial direction of the crystal, and an N-region over a wide area in the axial direction of the crystal. Single crystal can be manufactured.
  • the present invention is a silicon single crystal wafer manufactured from the above silicon single crystal.
  • a silicon single crystal wafer produced from a silicon single crystal produced according to the present invention is an N— region over the entire surface of the crystal, Since it is extremely low in defect, it can be made extremely useful silicon.
  • the present invention when a silicon single crystal having a normal defect distribution is being pulled under a certain internal structure of a furnace, a disturbance or a meaning is caused. If the defect distribution is abnormal due to the diagrammatic fluctuations in the manufacturing conditions, the internal structure of the furnace can be repaired by appropriate adjustment: it can be repaired under any conditions. It is possible to stably pull up the crystal serving as the entire N— region, thereby improving the yield and productivity of ultra-low defect silicon single crystal. In addition, ⁇ G was obtained for each pulling furnace, which is unique to each pulling furnace and for the fluctuation width of the pulling speed.Thus, by appropriately adjusting the furnace internal structure, it is possible to stabilize the entire growth direction in the growth direction. It has become possible to pull up the crystal that becomes the N-region. BRIEF DESCRIPTION OF THE FIGURES
  • Figure 1 shows the ⁇ direction IS of the crystal in the silicon single crystal axis direction as the horizontal axis and the pulling speed V as the vertical axis when manufactured under the optimal pulling conditions. It is a distribution map of various defects.
  • Fig. 2 is a defect distribution diagram showing an example in which one condition is changed from the pulling condition in Fig. 1.
  • Fig. 3 shows an example in which another condition fluctuates from the pulling condition in Fig. 1! 3 ⁇ 4 Distribution map.
  • FIG. 4 is a distribution chart of various elements showing an example in a case where one other condition fluctuates from the pulling condition of FIG.
  • FIG. 5 is a schematic explanatory view of a single crystal pulling apparatus by the CZ method used in the present invention.
  • Figure 6 is a distribution diagram of various defects when the horizontal axis represents the position of the crystal in the single crystal axis direction in the single crystal axis direction and the vertical axis represents the growth rate by the conventional pulling method.
  • FIG. 7 is an explanatory diagram showing the relationship between the pulling speed and the in-plane defect distribution in the conventional pulling method.
  • FPD Flow Pattern Defect
  • a wafer is cut out from a silicon single crystal rod after growth, and the strained layer on the surface is etched with a mixed solution of hydrofluoric acid and nitric acid.
  • Ri after removing the Ri collected by pitch in g, Ri by the and this is K 2 C r 2 0 7 and hydrofluoric acid and d the surface with a mixture of water pitch in g (S ecco et pitch in g) Bits and ripples occur.
  • This ripple pattern is referred to as FPD, and the higher the FPD density in the wafer surface, the more the oxidization / decompression withstand voltage failure increases (see Japanese Patent Application Laid-Open No. Hei 4-192435).
  • SEPD Secco Etch Pit Defect
  • LSTD Laser Cattering Tomography Defect
  • COP Crystal Originated P article
  • the diameter of this bit is less than 1 m and examined by the light scattering method.
  • L / D (Lare Dislocation: an abbreviation for interstitial dislocation loop) includes LSEPD, LFPD, etc., which are defects considered to be caused by the dislocation loop.
  • LSEPD is one of the largest SEPDs with a diameter of 10 ⁇ m or more.
  • LFPD refers to those not size tip-bi Tsu large can of force of the door s l 0 ⁇ m or more also in the FPD as described above, this Chi et al also that have been dislocation loops due and ideas, et al.
  • FIG. 1 to Fig. 4 show the defect distribution due to the variation of the crystal pulling manufacturing conditions as a parameter, with the crystal pulling speed V [mm / min] on the vertical axis and the crystal diameter on the horizontal axis.
  • FIG. 2 is a defect distribution diagram shown in FIG.
  • FIG. 5 is a schematic diagram of the pulling furnace used in the present invention.
  • the present inventors first investigated the influence on the defect distribution by changing the parameters other than the furnace internal structure. As a result, it can be seen that the defect distribution changes significantly, especially when the applied transverse magnetic field strength and the rotating speed of the crystal during pulling are changed, among other parameters. discovered.
  • Hikigami 1 used a certain in-furnace structure (HZ-1) to set the transverse magnetic field strength to 300 OG auss and the crystal rotation speed to 15 rpm. Under the conditions, a pulling experiment was performed in which the pulling speed was gradually reduced from high speed to low speed.
  • the in-furnace structure HZ-11 has a ⁇ -shaped solid-liquid interface heat insulator 8 installed around the solid-liquid interface 4 of the crystal, and a gap S [mm] between the lower end of the heat insulator and the melt surface 3. Since it is provided, G and ⁇ G can be controlled by adjusting S.
  • S 30 mm
  • the crystal center temperature gradient G c 3.55 ° C / mm
  • the crystal peripheral temperature gradient G e 3.552 ° C / mm
  • ⁇ G 0.01 ° C / mm. Note that these values are calculated by FEMAG (Comprehensive Heat Transfer Analysis Software).
  • the N-region refers to a region between the V-litch region boundary line including the ⁇ SF region ( ⁇ SF ring) and the I-litch region boundary line.
  • the magnetic field strength is related to the oxygen concentration of the crystal, etc.
  • the crystal rotation speed is a parameter related to the deformation of the product, in-plane uniformity, etc., so it must be changed depending on the operating conditions. You may not get it. In such a case, it is difficult to manufacture a crystal having a full N-region using the same in-furnace structure (HZ). Stable growth in the vertical direction is difficult even at the time of pulling up 1, and it cannot be manufactured at all at pulling up 1-3.
  • Pull-up 1 is the same as Pull-up 2 (magnetic field strength: OG auss) except that HZ-2 is used, and Pull-up 5 is Pull-up 2 except that HZ-3 is used. Under the same conditions, an experiment was conducted in which the pulling speed was gradually reduced.
  • pull-up 1-6 was performed under the same conditions as pull-up 3 (crystal rotation speed: 5 rpm), except that HZ-2 was used, and pull-up 7 was pulled, except that HZ-3 was used. Under the same conditions as above, an experiment was conducted in which the pulling speed was gradually reduced.
  • the manufacturing conditions other than the furnace internal structure are adjusted. If the gradient in the radial direction of G is made small so that the V / G value becomes a ⁇ — region over the entire surface in the g direction, the silicon alone becomes an N — region over the entire surface in the radial direction. Crystals can be formed.
  • the analysis results of the simulation are matched under the conditions of the pull-up.
  • the S criterion that does not match is, for example, the boundary of each defect distribution, such as ⁇ SF, in the experiment of gradually decreasing the pulling speed, and the V / G value calculated from G obtained by analysis. Comparing the distributions, for example, if the line inside ⁇ SF is indicated by a certain value of V / G, it is at least relatively consistent.
  • the calculation method is as follows. First, under the conditions (1), the pulling speed is gradually reduced. And the pulling speed V at each boundary such as 0 SF inside, ⁇ SF outside, N (V) / N (I) boundary, I-reach boundary, etc., and each position ⁇ are clarified. Next, G is calculated by performing a thermal analysis in which the length of the crystal is successively changed, and each defect boundary is compared with the calculated V / G, and each boundary is determined by V / G. Quantify. Using this V / G, G in another experiment is calculated back. For example, in the case of pull one, use one line in the radial direction that spans the ⁇ 3 ring ⁇ 1 ⁇ () / 1 ⁇ (1) boundary, I-litch boundary, etc.
  • the method of combining the simula- tion with this experiment can also be used to change the distribution of defects for any situational change.
  • the AG has a furnace structure and operating conditions of 0.1 [° C / mm] (1) and a furnace structure and operating conditions of 0.02 [° C / mm] (lifting).
  • pulling was performed while gradually lowering the pulling speed in consideration of the change in G in the direction of the growth axis.In 1-8, FPD, LFPD, LSEP, etc.
  • the crystal was successfully grown without any glow-in defects after 10 cm from the straight body of the crystal.
  • the single crystal pulling apparatus 30 is arranged around a pulling chamber 31, a crucible 32 provided in the pulling chamber 31, and a crucible 32.
  • the crucible 32 is provided with a quartz crucible on the side for containing the silicon melt (hot water) 2 inside, and a graphite crucible on the outside thereof. Insulation is also provided on the outer west side of heater 34. Materials 35 are arranged.
  • a rectangular solid-liquid interface heat insulator 8 is provided on the outer periphery of the solid-liquid interface 4 of the crystal. .
  • the solid-liquid interface heat insulating material 8 is provided with an interval S of 1 to 1 ° cm between the lower end and the molten metal surface 3 of the silicon melt 2. This gap S can be adjusted according to the position of the root at the start of crystal pulling and the amount of raw material, and it is possible to raise and lower the solid-liquid interface disconnected material 8 itself May be configured to control the question interval S.
  • a cylindrical cooling device that blows cooling gas or blocks radiant heat to cool the single crystal; (Not shown).
  • a magnet 36 is installed outside the pulling chamber 31 in the horizontal direction, and a horizontal magnetic field is applied to the silicon melt 2 to suppress the convection of the melt.
  • a single crystal is to be grown stably.
  • a high-purity polycrystalline silicon material is heated in a crucible 32 to a temperature higher than the melting point (about 144 ° C.) and melted.
  • the tip of the seed crystal 5 is brought into contact with or immersed substantially in the center of the surface of the melt 2.
  • the crucible holding shaft 33 is rotated in an appropriate direction, and the wire 7 is wound while being rotated, and the seed crystal 5 is pulled up to thereby obtain a single crystal. Training is started. Thereafter, by adjusting the pulling speed and the temperature appropriately, it is possible to obtain a substantially cylindrical single crystal rod 1.
  • the wafer is an N-region over the entire surface in the radial direction of the crystal, and is also an N-region over the entire region of the crystal because it also expands in the sleeve direction. Therefore, the global region of FPD, C CP, etc. It is an extremely low defect product in which dislocation clusters such as in-defects such as SEP and LFPD do not exist on the entire surface of the wafer.
  • a silicon single crystal having a diameter of 6 inches is grown.
  • the present invention is not limited to this, and a diameter of 8 to 16 inches may be used. It can also be applied to silicon single crystals of inch or larger. Further, it goes without saying that the present invention can be applied to the so-called MCZ method in which a horizontal magnetic field, a longitudinal magnetic field, a cubic magnetic field, or the like is applied to a silicon melt.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de production d'un silicium monocristallin se caractérisant par le fait que lors d'un tirage CZ du cristal de telle sorte que la surface totale dans la direction radiale du cristal se trouve dans une région N, au moins comme une partie de la direction de tirage tel qu'illustré par le diagramme de répartition des défauts dont l'abscisse est le diamètre du cristal et l'ordonnée est V/G [mm2/°C min.], V [mm/min.] représentant la vitesse de tirage du cristal et G [°C/mm] représentant le gradient de température entre le point de fusion et 1400 °C autour de l'interface entre le solide et le liquide dans le cristal, si la valeur V/G provient de la région N pour la surface totale dans la direction radiale parce que la répartition radiale de G est inclinée suite à un changement des conditions de production autres que la structure de l'intérieur du four de tirage, on réduit l'inclinaison dans le diamètre radial de G en ajustant la structure de l'intérieur du four de tirage de sorte que la valeur V/G se trouve dans la région N pour la surface totale dans la direction radiale. L'invention permet d'élaborer un procédé de correction et un procédé de recherche d'une structure de l'intérieur du four, tous deux adaptés à n'importe quelle modification des conditions de production du monocristal, comme par exemple, une différence entre la vitesse de tirage et une valeur prédéfinie due à une perturbation, ce qui permet de produire un cristal présentant très peu de défauts, dans des conditions stables.
PCT/JP1999/006949 1998-12-14 1999-12-10 Procede de production d'un silicium monocristallin, silicium monocristallin et plaquette de silicium produits selon le procede WO2000036192A1 (fr)

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JP10/354447 1998-12-14
JP35444798A JP3601328B2 (ja) 1998-12-14 1998-12-14 シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ

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JP4207577B2 (ja) 2003-01-17 2009-01-14 信越半導体株式会社 Ｐドープシリコン単結晶の製造方法
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JP4496723B2 (ja) * 2003-06-27 2010-07-07 信越半導体株式会社 単結晶の製造方法及び単結晶製造装置
JP2005097049A (ja) * 2003-09-25 2005-04-14 Toshiba Corp シリコン単結晶の製造方法
JP4569103B2 (ja) * 2003-12-25 2010-10-27 信越半導体株式会社 単結晶の製造方法
JP2006045007A (ja) * 2004-08-05 2006-02-16 Komatsu Electronic Metals Co Ltd シリコン単結晶の品質評価方法
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JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法
KR101000326B1 (ko) 2007-05-30 2010-12-13 가부시키가이샤 사무코 실리콘 단결정 인상 장치
KR100916843B1 (ko) * 2009-01-13 2009-09-14 김영조 고효율 다결정 실리콘 잉곳 제조장치
JP5282762B2 (ja) * 2010-04-22 2013-09-04 信越半導体株式会社 シリコン単結晶の製造方法
JP6927150B2 (ja) 2018-05-29 2021-08-25 信越半導体株式会社 シリコン単結晶の製造方法

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