WO2000016407A3 - Geschaltetes netzteil mit reduzierten schaltverlusten - Google Patents
Geschaltetes netzteil mit reduzierten schaltverlusten Download PDFInfo
- Publication number
- WO2000016407A3 WO2000016407A3 PCT/DE1999/002874 DE9902874W WO0016407A3 WO 2000016407 A3 WO2000016407 A3 WO 2000016407A3 DE 9902874 W DE9902874 W DE 9902874W WO 0016407 A3 WO0016407 A3 WO 0016407A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switching
- losses
- transistor
- switching transistor
- reduced
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000570842A JP2002525853A (ja) | 1998-09-11 | 1999-09-10 | 低減されたスイッチング損失を有する接続されたパワーパック |
EP99969183A EP1119876A2 (de) | 1998-09-11 | 1999-09-10 | Geschaltetes netzteil mit reduzierten schaltverlusten |
US09/804,325 US6388287B2 (en) | 1998-09-11 | 2001-03-12 | Switch mode power supply with reduced switching losses |
US10/846,998 USRE40352E1 (en) | 1998-09-11 | 2004-05-14 | Switch mode power supply with reduced switching losses |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19841754.3 | 1998-09-11 | ||
DE19841754A DE19841754A1 (de) | 1998-09-11 | 1998-09-11 | Schalttransistor mit reduzierten Schaltverlusten |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/804,325 Continuation US6388287B2 (en) | 1998-09-11 | 2001-03-12 | Switch mode power supply with reduced switching losses |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000016407A2 WO2000016407A2 (de) | 2000-03-23 |
WO2000016407A3 true WO2000016407A3 (de) | 2000-11-09 |
Family
ID=7880725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1999/002874 WO2000016407A2 (de) | 1998-09-11 | 1999-09-10 | Geschaltetes netzteil mit reduzierten schaltverlusten |
Country Status (5)
Country | Link |
---|---|
US (2) | US6388287B2 (de) |
EP (1) | EP1119876A2 (de) |
JP (1) | JP2002525853A (de) |
DE (1) | DE19841754A1 (de) |
WO (1) | WO2000016407A2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6713813B2 (en) | 2001-01-30 | 2004-03-30 | Fairchild Semiconductor Corporation | Field effect transistor having a lateral depletion structure |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US6819089B2 (en) | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
US6828609B2 (en) * | 2001-11-09 | 2004-12-07 | Infineon Technologies Ag | High-voltage semiconductor component |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
JP4832731B2 (ja) | 2004-07-07 | 2011-12-07 | 株式会社東芝 | 電力用半導体装置 |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
AT504998A2 (de) | 2005-04-06 | 2008-09-15 | Fairchild Semiconductor | Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
KR101630734B1 (ko) | 2007-09-21 | 2016-06-16 | 페어차일드 세미컨덕터 코포레이션 | 전력 소자 |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
DE102008032876B4 (de) | 2008-07-14 | 2010-04-08 | Sew-Eurodrive Gmbh & Co. Kg | Verfahren, Schaltungsanordnung und Brückenschaltung |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
US8319290B2 (en) | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8860136B2 (en) * | 2012-12-03 | 2014-10-14 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
US9698768B2 (en) | 2015-07-14 | 2017-07-04 | Infineon Technologies Austria Ag | System and method for operating a switching transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216275A (en) * | 1991-03-19 | 1993-06-01 | University Of Electronic Science And Technology Of China | Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
US5438215A (en) * | 1993-03-25 | 1995-08-01 | Siemens Aktiengesellschaft | Power MOSFET |
DE19702102A1 (de) * | 1996-01-22 | 1997-07-24 | Fuji Electric Co Ltd | Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung |
WO1997029518A1 (de) * | 1996-02-05 | 1997-08-14 | Siemens Aktiengesellschaft | Durch feldeffekt steuerbares halbleiterbauelement |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56129423A (en) | 1980-03-14 | 1981-10-09 | Sony Corp | Triangle wave generating circuit |
GB2257830B (en) * | 1991-07-12 | 1995-04-05 | Matsushita Electric Works Ltd | Low output-capacity, double-diffused field effect transistor |
IT1272567B (it) * | 1992-09-15 | 1997-06-23 | Int Rectifier Corp | Dispositivo transistore di potenza, dotato di una regione ultraprofonda a concentrazione maggiorata |
JP3808116B2 (ja) * | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 高耐圧ic |
US6057558A (en) * | 1997-03-05 | 2000-05-02 | Denson Corporation | Silicon carbide semiconductor device and manufacturing method thereof |
US6239466B1 (en) * | 1998-12-04 | 2001-05-29 | General Electric Company | Insulated gate bipolar transistor for zero-voltage switching |
US6380569B1 (en) * | 1999-08-10 | 2002-04-30 | Rockwell Science Center, Llc | High power unipolar FET switch |
US6870220B2 (en) * | 2002-08-23 | 2005-03-22 | Fairchild Semiconductor Corporation | Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses |
-
1998
- 1998-09-11 DE DE19841754A patent/DE19841754A1/de not_active Withdrawn
-
1999
- 1999-09-10 JP JP2000570842A patent/JP2002525853A/ja active Pending
- 1999-09-10 WO PCT/DE1999/002874 patent/WO2000016407A2/de not_active Application Discontinuation
- 1999-09-10 EP EP99969183A patent/EP1119876A2/de not_active Withdrawn
-
2001
- 2001-03-12 US US09/804,325 patent/US6388287B2/en not_active Ceased
-
2004
- 2004-05-14 US US10/846,998 patent/USRE40352E1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216275A (en) * | 1991-03-19 | 1993-06-01 | University Of Electronic Science And Technology Of China | Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
US5438215A (en) * | 1993-03-25 | 1995-08-01 | Siemens Aktiengesellschaft | Power MOSFET |
DE19702102A1 (de) * | 1996-01-22 | 1997-07-24 | Fuji Electric Co Ltd | Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung |
WO1997029518A1 (de) * | 1996-02-05 | 1997-08-14 | Siemens Aktiengesellschaft | Durch feldeffekt steuerbares halbleiterbauelement |
Non-Patent Citations (1)
Title |
---|
ZHANG M T ET AL: "DESIGN CONSIDERATIONS AND PERFORMANCE EVALUATIONS OF SYNCHRONOUS RECTIFICATION IN FLYBACK CONVERTERS", APEC. ANNUAL APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION,US,NEW YORK, IEEE, vol. CONF. 12, 23 February 1997 (1997-02-23), pages 623 - 630, XP000731009, ISBN: 0-7803-3705-0 * |
Also Published As
Publication number | Publication date |
---|---|
EP1119876A2 (de) | 2001-08-01 |
USRE40352E1 (en) | 2008-06-03 |
WO2000016407A2 (de) | 2000-03-23 |
JP2002525853A (ja) | 2002-08-13 |
US20010050549A1 (en) | 2001-12-13 |
US6388287B2 (en) | 2002-05-14 |
DE19841754A1 (de) | 2000-03-30 |
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