WO2000007771A1 - Procede et dispositif de polissage - Google Patents
Procede et dispositif de polissage Download PDFInfo
- Publication number
- WO2000007771A1 WO2000007771A1 PCT/JP1999/004062 JP9904062W WO0007771A1 WO 2000007771 A1 WO2000007771 A1 WO 2000007771A1 JP 9904062 W JP9904062 W JP 9904062W WO 0007771 A1 WO0007771 A1 WO 0007771A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- surface plate
- grooves
- work
- receiving portion
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004744 fabric Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 239000003082 abrasive agent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
- B24D9/08—Circular back-plates for carrying flexible material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the present invention relates to a polishing method and a polishing apparatus for polishing (mirror polishing) a work (for example, a semiconductor wafer), and more particularly, to a polishing table receiving portion for supporting a polishing table of a polishing apparatus. is there. Background art
- the polishing is performed by pressing the workpiece while flowing an abrasive onto a polishing cloth attached to the surface plate and rotating the work and the surface plate.
- the polishing apparatus used for this polishing process includes a platen on which a polishing cloth is adhered, a platen receiving portion for forming a groove and supporting the platen on the groove forming surface, and supplying an abrasive to the polishing cloth.
- Abrasive supply means for rotating the work and the surface plate.
- polishing machines have come to be able to remove the surface plate in order to improve productivity, specifically, to shorten the equipment stop time when replacing the polishing cloth.
- high-strength materials such as solid, stainless steel and ceramics are used for the surface plate and the surface plate receiving portion. Grooves are provided on the platen support surface of the platen support to facilitate removal of the platen from the platen receiver.
- the surface plate receives a polishing load from the work, and the surface plate receives a reaction force from the surface plate receiving portion.
- This reaction force is the pressing force between the polishing cloth and the peak.
- a groove is provided in the surface plate A reaction force is received from the grooveless part of the surface plate receiving part, but no reaction force is received from the grooved part.
- the pressing force between the polishing cloth and the work becomes non-uniform in the plane of the work, the polishing rate of the work becomes non-uniform in the plane, and minute undulations are formed on the work surface.
- a concentric groove 9d is provided in the surface plate receiving portion 3d, and the rotation center of the surface plate receiving portion 3d and the rotation center of the workpiece are provided.
- portions where the pressing force against the polishing cloth is strong and portions where the pressing force is weak are concentrically and alternately generated with respect to the rotation center of the workpiece.
- the difference in the pressing force changes the polishing rate of the work. Therefore, the portion corresponding to the non-groove portion of the work is polished more, and the portion corresponding to the grooved portion is polished less, so that the work W is concentric as shown in FIG. Undulations are formed.
- the present invention has been made in view of such a problem, and provides a polishing method and a polishing apparatus in which a pressing force between a work and a polishing cloth is substantially uniform in a plane, and a work of good quality is obtained. With the goal. Disclosure of the invention
- the plurality of grooves are arranged in a linear direction.
- the platen is supported on the groove forming surface of the provided platen receiving portion, and the work is pressed while flowing an abrasive on the polishing cloth attached to the platen, and the work and the platen are rotated to polish the work. It is characterized in that processing is performed.
- the trajectory of the groove of the surface plate receiving portion with respect to each part of the rotating work shows a complicated trajectory, and The pressing force with the workpiece is substantially averaged. For this reason, the pressing force from the polishing cloth in the workpiece surface is also averaged, so that a work of good quality can be obtained.
- a polishing apparatus of the present invention comprising: a surface plate on which a polishing cloth is stuck; a surface plate receiving portion for forming a groove and supporting the surface plate on the groove forming surface;
- a polishing apparatus comprising: an abrasive supply unit for supplying an abrasive to the polishing cloth; and a rotating mechanism for rotating the work and the surface plate, wherein the groove is provided in the receiving portion in a linear direction. It is characterized by being.
- the trajectory of the groove of the surface plate receiving portion with respect to each portion of the rotating work shows a complicated trajectory.
- the pressing force of the platen receiving portion is substantially averaged. Therefore, the pressing force from the polishing cloth in the work surface is also averaged, so that a good quality peak can be obtained.
- the grooves may be arranged in parallel.
- the grooves can be arranged in a grid or radially. Further, it is preferable that the center of rotation of the surface plate receiving portion and the center of rotation of the work are shifted from each other. Thereby, the pressing force between the polishing cloth and the work is substantially averaged.
- the work may be a semiconductor device.
- a work requiring extremely high flatness such as a semiconductor wafer
- the effect of applying the method or apparatus of the present invention is particularly remarkable.
- the width of each groove is 3 to 15 mm
- the interval between the grooves is 10 to 100 mm
- the depth of the groove is 1 to 10 mm.
- the semiconductor wafer is polished according to the present invention, if the groove is within this range, good flatness can be obtained, and the surface plate can be easily removed from the surface plate receiving portion. Become. BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1 is a schematic configuration diagram of a polishing apparatus according to a first embodiment of the present invention
- FIG. 2 is a plan view of a platen receiving portion of the polishing apparatus according to the first embodiment
- FIG. It is a plan view of a surface plate receiving portion of another polishing apparatus according to the second embodiment of the present invention
- FIG. 4 is a plan view of a surface plate receiving portion of another polishing apparatus according to the third embodiment of the present invention.
- FIG. 5 is a diagram for explaining preferred groove specifications of the surface plate receiving portion of FIG. 4, and FIG. 6 is a plan view of a surface plate receiving portion of a polishing device according to a prior developed technology.
- FIG. 7 is a view showing a polished surface of a workpiece when polished using the platen receiving portion of FIG.
- FIG. 8 is a view showing a polished surface of a work when polishing is performed using the surface plate receiving portion of FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a schematic diagram of a polishing apparatus according to a first embodiment of the present invention.
- the polishing apparatus 1 includes a surface plate 2, a surface plate receiving portion 3, an abrasive supply unit 4, a polishing head 5, a head rotating mechanism 6, and a surface rotating mechanism 7.
- polishing cloth 8 is attached to the surface plate 2.
- the surface plate 2 is detachably supported by the surface plate receiving portion 3a. Polishing cloth 8 This is because the polishing pad 8 can be easily replaced by removing it integrally with the surface plate 2 when replacing the polishing pad. In this case, the fixing of the surface plate 2 to the surface plate receiving portion 3a is performed by a special jig.
- a lattice-shaped groove 9a is provided on the upper surface of the surface plate receiving portion 3a.
- the grooves 9a may be wavy lines as long as they are provided in a lattice shape as a whole.
- the reason why the grooves 9a are formed on the surface of the platen receiving portion 3a in this manner is that when the platen 2 is removed from the platen receiving portion 3a, a fluid, for example, water is supplied to the grooves 9a and the water pressure is applied. This makes it possible to easily remove the platen 2 with.
- the shaft 10 of the surface plate receiving portion 3a is connected to a motor (not shown) via a speed reducer.
- the reduction gear and the motor constitute a platen rotating mechanism 7.
- the center of rotation of the platen receiving portion 3a is shifted from the center of rotation of the workpiece W. Thereby, the pressing force between the polishing pad 8 and the workpiece W is substantially averaged as much as possible.
- the abrasive supply unit 4 has a nozzle 12 connected to an abrasive storage tank (not shown).
- the abrasive 12 is supplied from the nozzle 12 to a sliding portion between the workpiece W and the polishing cloth 8. It is supposed to be.
- the polishing head 5 is for pressing the workpiece W against the polishing cloth 8, but is not pressed directly, but is pressed via the plate 13.
- the work W is attached to the plate 13 by a wax method or a waxless method.
- the shaft 14 of the polishing head 5 is connected to a motor (not shown) via a speed reducer.
- the reduction gear and the motor constitute a head rotation mechanism 6.
- the plate 13 to which the work W is attached is placed under the polishing head 5, and the work W is brought into contact with the polishing cloth 8.
- the polishing head 5 is lowered, and the work W is pressed against the polishing cloth 8 via the plate 13.
- the abrasive is supplied from the nozzle 12 of the abrasive supply unit 4 Is supplied to polish the work W.
- polishing apparatus 1 According to the polishing apparatus 1 and the polishing method performed by the polishing apparatus 1, the following effects can be obtained.
- the platen 2 is formed from the grooved portion and the grooveless portion of the platen receiving portion 3a.
- the grooves 9a are formed in a lattice pattern, so that the grooved and non-grooved portions of the platen receiving portion 3a are defined for each part of the rotating workpiece W.
- the portion transferred to the platen 2 comes into contact with each part of the work W through the polishing pad 8 without being tight.
- the pressing force against the platen 2 in the plane of the work W is also averaged, so that no uneven load acts on the work W, and good quality can be obtained.
- FIG. 3 shows a surface plate receiving portion 3b of the polishing apparatus according to the second embodiment, and the grooves 9b are formed in parallel and linearly.
- the groove 9b may be a wavy line as long as it is provided as a whole in a linear direction.
- the groove spacing and the number of grooves are not particularly limited, but for removal of the platen 2, three or more linear grooves must be formed in parallel at almost equal intervals over the entire platen. Is preferred.
- FIG. 4 shows a surface plate receiving portion 3c of the polishing apparatus according to the third embodiment, and the grooves 9c are provided radially.
- the grooves 9c may be wavy lines as long as they are provided radially as a whole.
- the groove spacing exceeds 100 mm, it will be difficult to remove the surface plate. On the other hand, if it is less than 10 mm, the surface of the platen is fine and pulsates, which affects the flatness.
- the rotation center of the surface plate receiving portion 3c and, consequently, the rotation center of the surface plate and the rotation center of the work are deviated, and the eccentric position of the surface plate.
- the workpiece is polished.
- the arc length X is at least 10 mm.
- the depth of the groove exceeds 10 mm, the rigidity of the platen receiving part decreases, which affects the flatness. On the other hand, if it is less than 1 mm, it is difficult to introduce water into the groove of the surface plate receiving part when removing the surface plate, and it becomes difficult to remove the surface plate.
- polishing was performed using the surface plate receiving part 3a provided with the lattice-shaped grooves 9a as shown in Fig. 2, and in order to compare the effect with that, the prior art as shown in Fig. 6 was used.
- the work (subject to be polished) was polished using the surface plate receiving part 3d provided with concentric grooves 9d by the developed technology.
- the object to be polished was a single-crystal silicon wafer (thickness: 735 zm) grown by the Chiyoklarsky method, and was a P-type, crystal orientation ⁇ 100>, etching wafer of 20 ° ⁇ . Was prepared.
- a non-woven type polishing cloth with a hardness of 80 (Asu-Ri-C hardness: in accordance with JI SK6301) was used.
- the work was pressed against the polishing cloth with a polishing load of 250 g / cm 2 using a polishing head.
- the removal amount by polishing that is, the polishing allowance was set to 12 m.
- a plate made of SiC and having a thickness of 30 mm and a diameter of 700 mm was used.
- the width of the groove was 10 mm, the interval was 30 mm, and the depth of the groove was 3 mm.
- the platen was attached to the platen receiving part, and the center of the platen receiving part and the center of the work were shifted by 200 mm, and the work was polished in a single wafer type.
- the rotation speeds of the work and the surface plate are each 4 Orpm.
- the platen is polished by swinging ⁇ 10 mm.
- polishing of a semiconductor wafer was mainly described, but the present invention is not limited to a semiconductor wafer other than a semiconductor wafer such as a glass substrate for a liquid crystal panel, a quartz glass substrate for a photomask, and a magnetic disk substrate. Of course, it can also be used for polishing thin plates.
- the platen is supported on the groove forming surface of the platen receiving portion in which the groove extends in the linear direction, and the work is pressed while flowing the abrasive on the polishing cloth attached to the platen. Since the grinding process is performed by rotating the work and the surface plate, a work of good quality can be obtained. It is also easy to replace the surface plate. Therefore, the polishing method and the polishing apparatus of the present invention are particularly suitable for polishing various thin plate products such as semiconductor devices, glass substrates for liquid crystal panels, quartz glass substrates for photomasks, and magnetic disk substrates.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/509,208 US6332830B1 (en) | 1998-08-04 | 1999-07-29 | Polishing method and polishing device |
DE69913476T DE69913476T2 (de) | 1998-08-04 | 1999-07-29 | Polierverfahren und vorrichtung |
KR1020007003595A KR100579431B1 (ko) | 1998-08-04 | 1999-07-29 | 연마방법 및 연마장치 |
EP99933146A EP1020254B1 (en) | 1998-08-04 | 1999-07-29 | Polishing method and polishing device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10/220573 | 1998-08-04 | ||
JP22057398A JP3920465B2 (ja) | 1998-08-04 | 1998-08-04 | 研磨方法および研磨装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000007771A1 true WO2000007771A1 (fr) | 2000-02-17 |
Family
ID=16753112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/004062 WO2000007771A1 (fr) | 1998-08-04 | 1999-07-29 | Procede et dispositif de polissage |
Country Status (7)
Country | Link |
---|---|
US (1) | US6332830B1 (ja) |
EP (1) | EP1020254B1 (ja) |
JP (1) | JP3920465B2 (ja) |
KR (1) | KR100579431B1 (ja) |
DE (1) | DE69913476T2 (ja) |
TW (1) | TW425327B (ja) |
WO (1) | WO2000007771A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6520843B1 (en) * | 1999-10-27 | 2003-02-18 | Strasbaugh | High planarity chemical mechanical planarization |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
KR20030015567A (ko) * | 2001-08-16 | 2003-02-25 | 에스케이에버텍 주식회사 | 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드 |
US6866560B1 (en) * | 2003-01-09 | 2005-03-15 | Sandia Corporation | Method for thinning specimen |
JP4712539B2 (ja) * | 2005-11-24 | 2011-06-29 | ニッタ・ハース株式会社 | 研磨パッド |
US20100099342A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Pad conditioner auto disk change |
CN102366931A (zh) * | 2011-10-27 | 2012-03-07 | 苏州金牛精密机械有限公司 | 一种工件研磨治具 |
US10105812B2 (en) | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
WO2017165216A1 (en) * | 2016-03-24 | 2017-09-28 | Applied Materials, Inc. | Textured small pad for chemical mechanical polishing |
US11685013B2 (en) * | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
CN110977753B (zh) * | 2019-11-22 | 2022-06-28 | 中国航发西安动力控制科技有限公司 | 等分偏心球窝精细研磨工装及加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61175352U (ja) * | 1985-04-23 | 1986-10-31 | ||
JPH05237761A (ja) * | 1992-02-28 | 1993-09-17 | Shin Etsu Handotai Co Ltd | 研磨機の除熱方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5398459A (en) * | 1992-11-27 | 1995-03-21 | Kabushiki Kaisha Toshiba | Method and apparatus for polishing a workpiece |
JP3264589B2 (ja) * | 1994-09-07 | 2002-03-11 | 東芝機械株式会社 | 研磨装置 |
JP3418467B2 (ja) * | 1994-10-19 | 2003-06-23 | 株式会社荏原製作所 | ポリッシング装置 |
US5904609A (en) * | 1995-04-26 | 1999-05-18 | Fujitsu Limited | Polishing apparatus and polishing method |
JPH1058317A (ja) * | 1996-05-16 | 1998-03-03 | Ebara Corp | 基板の研磨方法及び装置 |
JPH10156705A (ja) | 1996-11-29 | 1998-06-16 | Sumitomo Metal Ind Ltd | 研磨装置および研磨方法 |
US5855804A (en) * | 1996-12-06 | 1999-01-05 | Micron Technology, Inc. | Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints |
US5975986A (en) * | 1997-08-08 | 1999-11-02 | Speedfam-Ipec Corporation | Index table and drive mechanism for a chemical mechanical planarization machine |
US5972162A (en) * | 1998-01-06 | 1999-10-26 | Speedfam Corporation | Wafer polishing with improved end point detection |
US5997390A (en) * | 1998-02-02 | 1999-12-07 | Speedfam Corporation | Polishing apparatus with improved alignment of polishing plates |
US6213855B1 (en) * | 1999-07-26 | 2001-04-10 | Speedfam-Ipec Corporation | Self-powered carrier for polishing or planarizing wafers |
-
1998
- 1998-08-04 JP JP22057398A patent/JP3920465B2/ja not_active Expired - Fee Related
-
1999
- 1999-07-28 TW TW088112812A patent/TW425327B/zh not_active IP Right Cessation
- 1999-07-29 EP EP99933146A patent/EP1020254B1/en not_active Expired - Lifetime
- 1999-07-29 DE DE69913476T patent/DE69913476T2/de not_active Expired - Lifetime
- 1999-07-29 KR KR1020007003595A patent/KR100579431B1/ko not_active IP Right Cessation
- 1999-07-29 WO PCT/JP1999/004062 patent/WO2000007771A1/ja active IP Right Grant
- 1999-07-29 US US09/509,208 patent/US6332830B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61175352U (ja) * | 1985-04-23 | 1986-10-31 | ||
JPH05237761A (ja) * | 1992-02-28 | 1993-09-17 | Shin Etsu Handotai Co Ltd | 研磨機の除熱方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1020254A4 * |
Also Published As
Publication number | Publication date |
---|---|
DE69913476T2 (de) | 2004-11-25 |
KR100579431B1 (ko) | 2006-05-15 |
JP3920465B2 (ja) | 2007-05-30 |
US6332830B1 (en) | 2001-12-25 |
EP1020254A4 (en) | 2001-10-17 |
EP1020254A1 (en) | 2000-07-19 |
DE69913476D1 (de) | 2004-01-22 |
KR20010030901A (ko) | 2001-04-16 |
JP2001129758A (ja) | 2001-05-15 |
EP1020254B1 (en) | 2003-12-10 |
TW425327B (en) | 2001-03-11 |
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