WO1999054935A1

WO1999054935A1 - Portable communication equipment

Info

Publication number: WO1999054935A1
Application number: PCT/JP1998/001744
Authority: WO
Inventors: Toshinori Hirashima; Tsuneo Endo; Masatoshi Morikawa; Mitsuaki Hibino; Tomio Yamada; Sakae Kikuchi; Shinji Moriyama
Original assignee: Hitachi, Ltd.; Hitachi Tohbu Semiconductor, Ltd.
Priority date: 1998-04-16
Filing date: 1998-04-16
Publication date: 1999-10-28
Also published as: AU6852498A

Abstract

Portable communication equipment provided with an antenna and a power amplifier circuit module for amplifying high-frequency signals emitted from the antenna, wherein the power amplifier circuit module is provided with a wiring board (1) and a semiconductor element (CHT) (2) which is mounted on the wiring board (1) and electrically and mechanically connected to the board (1) through a plurality of bump electrodes (3), characterized in that the substrate (1) has conductors (4 and 5) which are electrically and mechanically connected to part of the bump electrodes (3) and work as heat dissipating paths. The portable communication equipment is further characterized in that the wiring board (1) is constituted in a multilayered wiring board composed of multiple wiring layers and the conductors (4 and 5) used as the above heat dissipating paths are formed through each wiring layer of the multilayered wiring board, thereby further reducing the size of the power amplifier circuit module and, accordingly, the portable communication equipment.

Description

W / 54

Description Mobile communication device Technical field

The present invention relates to a mobile communication device, and particularly to a technology effective when applied to a mobile communication device such as a mobile phone or a mobile phone equipped with an antenna and a power amplifier circuit module. Background art

2. Description of the Related Art In recent years, mobile communication devices such as a PDC (Persona1Digitala1C1E1lullar) type mobile phone and a mobile phone such as a PHS (Persona1 1Handy phponesyms) type mobile phone have rapidly spread. In general, these portable communication devices emit an electric wave and receive an electric wave, an antenna for supplying a transmitting high-frequency signal to the antenna, a radio unit for converting a received high-frequency signal received by the antenna to an intermediate frequency, and a voice unit. It consists of a baseband unit that performs signal processing and input / output control. The configuration of these portable communication devices is disclosed in, for example, “Hitachi Review”, vol. 78, No. 11 (1996-1-11), and pp. 21-26. .

The widespread use of mobile communication devices such as mobile phones and mobile phones is due to their ability to exchange information "anytime, anywhere, with anyone" by taking advantage of their small size and light weight. However, there is a demand for further downsizing of the mobile communication device in order to further spread the use of the mobile communication device. In order to meet this demand, it is necessary to further reduce the size of each component of the mobile communication device.

One of the components of the upper device is a power amplifier circuit module provided in the wireless section of a portable communication device. To reduce the size of this power amplifier circuit module, it is necessary to reduce the size of the semiconductor chip that constitutes the amplifier. Is essential. However, when the size of the semiconductor chip is reduced, the ability to radiate heat generated inside the semiconductor chip to the outside decreases. As a result, the heat generated inside the semiconductor chip adversely affects the amplification characteristics of the amplifying element, and may cause deterioration of the characteristics of the mobile communication device. For this reason, there is a problem that it is difficult to further reduce the size of the power amplification circuit module.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and an object of the present invention is to further reduce the size of a power amplifier circuit module in a portable communication device, and to further reduce the size. The aim is to provide technologies that can be achieved.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings. Disclosure of the invention

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) A portable communication device including an antenna and a power amplification circuit module for amplifying a high-frequency signal radiated from the antenna, wherein the power amplification circuit module is mounted on a wiring board, and on the wiring board, Multiple ba In a portable communication device having a semiconductor chip electrically and mechanically connected to the wiring board via a bump electrode, the wiring board is connected to a part of the plurality of bump electrodes by a bump electrode. It has a conductor that is electrically and mechanically connected and serves as a heat dissipation path.

(2) The wiring board is a multilayer wiring board in which wiring layers are formed over multiple layers, and the conductor serving as the heat dissipation path is formed to penetrate each wiring layer of the multilayer wiring board. Features.

(3) The conductor serving as the heat dissipation path is characterized in that a cross-sectional shape of a wiring layer in contact with the bump electrode of the multilayer wiring board is an ellipse or an ellipse.

(4) The cross-sectional area of the wiring layer other than the wiring layer in contact with the bump electrode of the multilayer wiring board is larger than the cross-sectional area of the wiring layer in contact with the bump electrode of the multilayer wiring board. Is also large.

(5) The cross-sectional shape of the wiring layer other than the wiring layer in contact with the bump electrode of the multilayer wiring board is circular.

(6) The semiconductor chip is a field-effect transistor formed on one main surface of a semiconductor substrate.

(7) The conductor serving as the heat dissipation path is electrically and mechanically connected to a bump electrode formed on a source electrode of the field effect transistor.

(8) Further, in a portable communication device having an antenna and a power amplification circuit module, the power amplification circuit module includes a plurality of wiring layers and a plurality of through holes whose inside is filled with a metal layer. Having a gate electrode, a source electrode, and a drain electrode on its main surface A semiconductor chip having a field-effect transistor formed thereon, the semiconductor chip being mounted on the multilayer wiring such that the main surface faces the multilayer wiring board; and the gate electrode, the source electrode, and the drain of the semiconductor chip. And a plurality of bump electrodes for electrically and mechanically connecting the plurality of wiring layers of the multilayer wiring board to each other, and at a position facing the source electrode of the semiconductor chip. At least one of the plurality of through holes is arranged, and each of the through holes arranged at a position facing the source electrode and the source electrode are electrically and mechanically connected via the plurality of bump electrodes. Is connected to the terminal.

(9) The semiconductor chip has a rectangular shape, and the source electrode has a first portion extending planarly along a long side direction of the semiconductor chip; and a short portion of the semiconductor chip extending from the first portion. A second portion extending along a side direction, wherein the plurality of bump electrodes connected to the source electrode are connected to the second portion along a short side direction of the semiconductor chip. It is characterized by that.

(10) The multilayer wiring board is a ceramic board, and a minimum pitch at which the plurality of bump electrodes can be arranged is smaller than a minimum pitch at which the plurality of through holes can be arranged.

According to the above-described means, in a power amplification circuit module of a portable communication device, a semiconductor chip is mounted on a wiring board by a flip-chip method, and a conductor serving as a heat dissipation path is provided on the wiring board, and the heat dissipation path is provided. Can be electrically and mechanically connected to the bump electrode, and the heat generated inside the semiconductor chip can be efficiently radiated, so that the high-frequency power amplifier module can be further miniaturized. And thereby the mobile communication device It is possible to further reduce the size. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a block diagram showing a schematic configuration of a mobile phone according to an embodiment of the present invention.

FIG. 2 is a circuit diagram showing an example of a circuit configuration of the power amplifier shown in FIG.

FIG. 3 is a top plan view of a power amplifier circuit module in which the circuit configuration shown in FIG. 2 is modularized.

FIG. 4 is a diagram for explaining a method of mounting a semiconductor chip (CHT 2) on a multilayer wiring board in the present embodiment.

FIG. 5 is a diagram showing a state in which a semiconductor chip (CHT 2) is mounted on a multilayer wiring board in the present embodiment.

FIG. 6 is a cross-sectional view of a main part of a multilayer wiring board on which a semiconductor chip (CHT 2) is mounted in the present embodiment.

FIG. 7 is a top plan view of a conventional power amplifier circuit module.

FIG. 8 is a diagram for explaining a method of manufacturing the power amplification circuit module of the present embodiment.

FIG. 9 is a diagram showing a specific example of the power amplification circuit module of the present embodiment.

FIG. 10 is a circuit diagram showing another example of the circuit configuration of the power amplifier shown in FIG.

FIG. 11 is a circuit diagram showing another example of the circuit configuration of the power amplifier shown in FIG. FIG. 12 is a diagram showing a modification of the thermal via (through hole) of the present embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

In all the drawings for describing the embodiments, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

As shown in FIG. 1, the mobile phone according to the present embodiment emits radio waves, supplies an antenna 10 for receiving radio waves, a high-frequency signal to the antenna 10, and a reception signal received by the antenna 10. It comprises a radio section 20 for converting a high-frequency signal to an intermediate frequency and a baseband section 30. Here, the radio section 20 includes a high frequency section 120 and a low frequency section 130.

The high-frequency section 120 is composed of a power mixer (high-frequency power amplifier circuit module) 122 that amplifies the power of the transmission high-frequency signal output from the transmission mixer 123 and the transmission mixer 123, and an antenna 110 on the transmission side. And a receiving side, an antenna switch 122, a low noise amplifier 124 for amplifying a high frequency signal received by the antenna 10, and a receiving mixer 125. Further, the low frequency section 130 is composed of a quadrature modulator 131, a frequency synthesizer 132, and an intermediate frequency amplifier 133. The baseband unit 30 performs audio signal processing and input / output control.

As shown in the circuit diagram of FIG. 2, the power amplifier 122 shown in FIG. 1 uses field-effect transistors (FET1, FET2) as the amplification elements. The second circuit is a power amplifier having a two-stage configuration in which an FET amplification circuit having a source ground circuit configuration is cascaded in two stages. As shown in FIG. 3, the power amplifier shown in FIG. 1 includes a chip component CH such as a resistor and a capacitor and a semiconductor chip (CHT 1 and CHT 2) on a multilayer wiring board 1 composed of a ceramic substrate. ) Are implemented and modularized. This semiconductor chip (CHT1, CHT2) is composed of a single crystal semiconductor substrate such as silicon (Si) or a compound semiconductor substrate such as gallium arsenide (GaAs). Field-effect transistors (FET1, FET2) are formed on the surface.

Next, a method of mounting the semiconductor chip (C HT 2) and the multilayer wiring board 1 will be described with reference to FIG. As shown in FIG. 4 (a), the surface of the semiconductor chip (CHT 2) in contact with the multilayer wiring board 1 is provided on both sides of the element forming region 6 with the gate electrode 7g, the source electrode 7s, and the drain, respectively. An electrode 7d is provided. Here, the source electrode 7 s is formed in a comb tooth shape, and the gate electrode 7 g is arranged between the comb teeth of the source electrode 7 s. Note that the region that substantially operates as an FET is shown as an active region AE in FIG. As shown in FIG. 4 (b), on the uppermost surface of the multilayer wiring board 1 composed of a ceramic substrate, the electrodes (gate electrode 7g, source electrode 7s, Corresponding to the drain electrode 7d), a gate wiring electrode 2g, a source wiring electrode 2s, and a drain wiring electrode 2d are formed, respectively. The gate electrode 7 g, the source electrode 7 s and the drain electrode 7 d of the semiconductor chip (C HT 2) are connected to the gate wiring electrode 2 g of the multilayer wiring board 1 and the source wiring electrode via the bump electrode 3. 2s and drain wiring electrode 2d are electrically and mechanically connected. Thereby, the semiconductor chip (CHT 2) is mounted on the multilayer wiring board 1 as shown in FIG. Here, a plurality of bump electrodes 3 are provided on the source electrode 7 s and the drain electrode 7 d of the semiconductor chip (C HT 2). The source wiring electrode 2 s and the gate wiring electrode 2 g on the multilayer wiring board 1 are formed in a comb-teeth shape, and a thermal via (therma 1 viahole) ( 4, 5) are formed. Hereinafter, the thermal via is also referred to as a through hole.

The thermal vias (4, 5) penetrate through the inside of the multilayer wiring board 1 and are provided up to the back surface layer of the multilayer wiring board 1, as shown in FIG. 6 (a). In this case, as shown in FIG. 6 (b), the cross-sectional shape of the thermal via 4 in the first wiring layer (or the surface layer) of the multilayer wiring board 1 has an oval (or elliptical) shape. However, the cross-sectional shape of the thermal via 5 in the second and subsequent wiring layers (or the inner layer and the back surface layer) of the multilayer wiring board 1 is formed in a circular shape. The size of the cross-sectional shape of the thermal via 5 of the second and subsequent wiring layers is such that the elliptical shape (or elliptical shape) of the thermal via 4 of the first wiring layer is included in the circular shape. To be. Since power amplifiers handle large signals, a large drain current (IDS) flows between the source and drain of the field-effect transistor (FET 2). Heat generation becomes a problem. That is, the characteristics of Si—FETs that use Si (silicon) as a semiconductor substrate deteriorate because the transconductance (gm) decreases as the temperature rises, and G a A as a semiconductor substrate. In G a A s — FETs that use s (gallium arsenide), thermal runaway occurs at elevated temperatures, and in the worst case, the FETs burst.

The thermal vias (4, 5) described above are used for the semiconductor chip (CHT2). It is provided to make it easier to dissipate the heat generated inside and to prevent the problems described above. The thermal vias (4, 5) are formed in an elliptical (or elliptical) cross section in the first wiring layer of the multilayer wiring board 1. In the second and subsequent wiring layers, the cross-sectional shape is formed in a circular shape, whereby the heat radiation effect can be improved.

What is important here is that the thermal vias (4, 5) are arranged immediately below the bump electrodes 3. When the positions of the thermal vias (4, 5) and the bump electrode 3 are shifted, a thermal resistance corresponding to the shift is added, and efficient heat dissipation is difficult.

As described above, in the power amplifier circuit module of the present embodiment, the heat generated inside the semiconductor chip (C HT 2) can be efficiently dissipated, so that the field effect transistor (TFT 2) Deterioration of characteristics or destruction of the field effect transistor (TFT 2) can be prevented, and the current value of the drain current (IDS) that can flow between the source and the drain of the field effect transistor (TFT 2) can be prevented. Since the width (difference between the maximum current value and the minimum current value) can be increased, the design margin can be improved.

For comparison, a method of mounting the semiconductor chip (C HT 2) and the multilayer wiring board 1 in a conventional power amplifier circuit module will be described with reference to FIG. As shown in FIG. 7, in the conventional power amplifier circuit module, each electrode (source electrode, gate electrode and drain electrode) of the semiconductor chip (CHT 2) and the multi-layer wiring board 1 are connected by wire bonding. The formed wiring electrodes (source wiring electrode, gate wiring electrode, and drain wiring electrode) were electrically connected. In this wire bonding, a predetermined distance is required between each electrode of the semiconductor chip (CHT 2) and the wiring electrode formed on the multilayer wiring board 1. Therefore, in the conventional power amplifier circuit module, when mounting the semiconductor chip (CHT2) on the multilayer wiring board 1, a large area (or area) is required, and there is a limit to the miniaturization of the power amplifier circuit module. there were.

As shown in FIG. 7, for example, when a conventional power amplifier circuit module has a size of 10 mm × 10 mm, according to the power amplifier circuit module of the present embodiment, as shown in FIG. Thus, for example, the size can be 7 mm X 7 mm. Thus, according to the power amplification circuit module of the present embodiment, it is possible to further reduce the size. Further, the present embodiment is suitable for a high-frequency circuit because the wiring length is shorter than that of wire bonding.

In this embodiment, the thermal vias (4, 5) are formed on the teeth of the comb of the source wiring electrode 2s. This is because when a thermal via (4, 5) is formed at the connection of the comb teeth of the gate wiring electrode 2 g, the drain wiring electrode 2 d or the source wiring electrode 2 s, the field effect transistor (FET 2 This is because parasitic capacitance is added to the gate electrode or drain electrode of), which affects the amplification characteristics of the field-effect transistor (FET 2).

However, as can be seen from the circuit diagram of FIG. 2, the source electrode of the field-effect transistor (FET 2) is at the ground potential (G ND), so that the thermal via (4, 5) Is formed on the teeth of the comb of the source wiring electrode 2 s without adversely affecting the amplification characteristics of the field-effect transistor (FET 2). If the amplification characteristics of the field-effect transistor (FET 2) are not affected, the thermal vias (4, 5) are connected to the gate wiring electrode 2g, the drain wiring electrode 2d, or the source wiring electrode 2d. It may be formed at the connecting portion of the teeth of the s comb.

The power amplification circuit module of the present embodiment is manufactured by the following method.

First, as shown in Fig. 8 (a), using a silver paste or a copper paste, the green for each layer on which the wiring patterns (2g, 2s, 2d) and thermal vias (4, 5) are formed Prepare sheets (9a to 9e). In FIG. 8, only the first wiring layer is shown, and other wiring layers are not shown.

Next, as shown in Fig. 8 (b), the green sheets (9a to 9e) are aligned and superimposed, and then each green sheet is heated and pressurized to thereby obtain a respective dust sheet. (9a-9e) is sintered to form a multilayer wiring board 1 made of ceramic. The ceramic substrate has a lower coefficient of linear expansion than silicon and GaAs and a lower stress than glass-epoxy substrates. Also, the dielectric constant is low.

Finally, as shown in FIG. 8 (c), the semiconductor chip C HT 2 on which the bump electrode 3 is formed is mounted on the multilayer wiring board 1, and is mounted by soldering. The bump electrode 3 is formed, for example, by forming an Au wire on a semiconductor chip electrode by a ball bonding method and leaving only the ball portion of the Au wire. In this case, the minimum pitch between bumps can be about 20 μm. Although not shown in FIG. 8 (c), a chip such as a resistor or a capacitor is provided on the multilayer wiring board 1. Parts are also mounted by soldering.

FIG. 9 shows a specific example of the power amplifier circuit module of the present embodiment manufactured by the method shown in FIG. In the specific example shown in FIG. 9, the thermal via 4 in the first wiring layer of the multilayer wiring board 1 has an elliptical shape having a width of 0.1 mm and a length of 0.25 mm. The thermal vias 5 in the wiring layers other than the first layer of the multilayer wiring board 1 were circular with a diameter of 0.25 mm, and the interval between the thermal vias 5 was 0.50 mm. The bump electrode 3 was a circle having a diameter of 0.09 mm, and the interval between the bump electrodes 3 was 0.12 mm. Note that the thickness of the multilayer wiring board 1 is 0.5 mm.

In the specific example shown in FIG. 9, the size of the thermal via (4, 5) is limited by the manufacturing process of the multilayer wiring board 1 (if the thermal via (4, 5) becomes large, the green sheet It is determined from the fact that the conductor paste comes off from the ground or the gap between the thermal vials (4, 5) becomes narrow, so that the green sheet cracks).

Also, the formation of the through-holes in the multilayer ceramic substrate requires a margin for the alignment of the through-holes between the respective layers, so that it is difficult to match the pitch of the bump electrodes 3. Therefore, in the present invention, the diameter of the through hole is widened so that a plurality of bump electrodes 3 can be connected.

If there are no or less restrictions on the manufacturing process of the multilayer wiring board 1, the size of the thermal vias (4, 5) can be made larger than that shown in FIG. When the size of Malvia (4, 5) is made larger than that shown in Fig. 9, the heat radiation effect can be further improved. Conversely, if the pitch on the bump electrode side is widened, the area of the semiconductor chip itself becomes large, and miniaturization becomes difficult, which is not practical.

In this embodiment, in addition to the circuit configuration shown in FIG. 2, the circuit configuration shown in FIG. 10 or FIG. 11 is adopted as the circuit configuration of the power amplifier shown in FIG. Is also good.

In FIG. 11, a field effect transistor (FET 3) constitutes an active filter circuit.

In this embodiment, the thermal via 4 may be the one shown in FIG. The thermal via 4 shown in FIG. 12 has a half cross section of the thermal via (4a) formed on the source wiring electrodes 2 s at both ends in the first wiring layer of the multilayer wiring board 1. It has a circular shape. According to the thermal via (4 a) shown in FIG. 12, the area of the thermal via (4, 4 a) in the first wiring layer of the multilayer wiring board 1 is increased, so that the heat dissipation effect is further improved. Can be enhanced.

Further, in the present embodiment, the mounting method of the semiconductor chip (C HT 2) and the multilayer wiring board 1 has been described as an example. However, the present invention is not limited to this, and the present invention is shown in FIG. It goes without saying that the present invention is also applicable to a method of mounting the semiconductor chip (CHT 1) and the multilayer wiring board 1.

Further, in the present embodiment, the case of the semiconductor chip (C HT 2) in which the field effect transistors (FET 1, FET 2) are formed on one main surface has been described, but the present invention is not limited to this. the invention, as has been described can be applied in which _c above semiconductor chip bipolar transistor is formed on a principal surface, the following advantages are provided according to the present embodiment. (1) In a power amplifier circuit module for portable communication equipment, a multilayer wiring board A thermal via (4, 5) penetrating to the lowermost wiring layer is formed in 1 and the source electrode 2s of the semiconductor chip (CHT1, CHT2) and the thermal via (4, 5) are bump electrodes. Since the connection is made electrically and mechanically via 3, heat generated inside the semiconductor chips (CHT 1 and CHT 2) can be efficiently dissipated.

As a result, the size of the power amplification circuit module of the mobile communication device can be further reduced, so that the size of the mobile communication device can be further reduced.

(2) In a power amplifier circuit module of a portable communication device, heat generated inside the semiconductor chip (CHT1, CHT2) can be efficiently dissipated. Can be improved.

As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and can be variously modified without departing from the gist of the invention. Of course. Industrial applicability

The effects obtained by the representative inventions among the inventions disclosed in the present application will be briefly described as follows.

According to the present invention, it is possible to further reduce the size of a portable communication device.

Claims

The scope of the claims

1. A portable communication device comprising: an antenna; and a power amplification circuit module for amplifying a high-frequency signal radiated from the antenna,

The power amplification circuit module,

A wiring board,

A portable communication device having a semiconductor chip mounted on the wiring board and electrically and mechanically connected to the wiring board via a plurality of bump electrodes;

The portable communication device, wherein the wiring board has a conductor that is electrically and mechanically connected to a part of the plurality of bump electrodes and serves as a heat radiation path.

2. The wiring board is a multilayer wiring board in which wiring layers are formed over multiple layers,

2. The portable communication device according to claim 1, wherein the conductor serving as the heat radiation path is formed so as to penetrate each wiring layer of the multilayer wiring board.

3. The portable communication device according to claim 2, wherein the conductor serving as the heat dissipation path has a cross-sectional shape of a wiring layer in contact with the bump electrode of the multilayer wiring board, which is oval or elliptical. .

4. The conductor serving as the heat dissipation path has a cross-sectional area of a wiring layer other than the wiring layer in contact with the bump electrode of the multilayer wiring board larger than a cross-sectional area of the wiring layer in contact with the bump electrode of the multilayer wiring board. The portable communication device according to claim 2 or claim 3, characterized in that:

5. The mobile phone according to claim 4, wherein the cross-sectional shape of the wiring layer other than the wiring layer in contact with the bump electrode of the multilayer wiring board is circular. Communication equipment.

6. The portable communication device according to any one of claims 1 to 5, wherein the wiring board is made of a ceramic.

7. The semiconductor device according to claim 1, wherein the semiconductor chip is a field effect transistor formed on one main surface of a semiconductor substrate. Mobile communication devices.

8. The portable communication device according to claim 7, wherein said semiconductor substrate is a compound semiconductor substrate.

9. The conductor as the heat dissipation path is electrically and mechanically connected to a bump electrode formed on a source electrode of a field-effect transistor. A mobile communication device according to paragraph 8.

10. The portable communication according to any one of claims 1 to 9, wherein a first reference potential is applied to the conductor serving as the heat radiation path.

machine.

1 1. A portable communication device having an antenna and a power amplification circuit module,

The power amplification circuit module,

A multilayer wiring board having a plurality of wiring layers and a plurality of through holes whose inside is filled with a metal layer;

A semiconductor chip having a field effect transistor having a gate electrode, a source electrode, and a drain electrode formed on a main surface thereof, mounted on the multilayer wiring so that the main surface faces the multilayer wiring board. Semiconductor chip And

A plurality of bump electrodes for electrically and mechanically connecting each of the gate electrode, the source electrode, and the drain electrode of the semiconductor chip to the plurality of wiring layers of the multilayer wiring board;

At least one of the plurality of through holes is arranged at a position facing the source electrode of the semiconductor chip,

A portable communication device, wherein each of the through holes arranged at a position facing the source electrode and the source electrode are electrically and mechanically connected via the plurality of bump electrodes.

12. The semiconductor chip has a rectangular shape, and the source electrode has a first portion extending planarly along a long side direction of the semiconductor chip, and a short portion of the semiconductor chip extending from the first portion. A second portion extending along the side direction,

The mobile communication according to claim 11, wherein the plurality of bump electrodes connected to the source electrode are connected to the second portion along a short side direction of the semiconductor chip. machine.

13. The multilayer wiring board is a ceramic board, and a minimum pitch at which the plurality of bump electrodes can be arranged is smaller than a minimum pitch at which the plurality of through holes can be arranged. The mobile communication device according to paragraph 11 or the scope of the request, paragraph 12.