JPH09148373A - Radio communication module - Google Patents

Radio communication module

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Publication number
JPH09148373A
JPH09148373A JP30302795A JP30302795A JPH09148373A JP H09148373 A JPH09148373 A JP H09148373A JP 30302795 A JP30302795 A JP 30302795A JP 30302795 A JP30302795 A JP 30302795A JP H09148373 A JPH09148373 A JP H09148373A
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interconnection
frequency
formed
high
layer
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JP30302795A
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Japanese (ja)
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Hiroaki Tanaka
裕明 田中
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Murata Mfg Co Ltd
株式会社村田製作所
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
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    • H01L2924/01Chemical elements
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2924/013Alloys
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
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    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
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    • H01L2924/30107Inductance

Abstract

PROBLEM TO BE SOLVED: To improve the packing density of a high frequency chip having bumps, reduce the interconnection loss, power consumption and noise and improve the high frequency characteristics and heat radiation property.
SOLUTION: A dielectric layer 2b such as polyimide or epoxy resin having a dielectric constant of 4 is formed on a metal base 2b. interconnection 3 is formed in and on the surface of layer 2b of a thin film multilayer substrate 2 and chip 4 having active and passive high frequency parts of a high frequency circuit is connected through its bumps 4a to the interconnection 3 formed on the surface of the layer 2a of the substrate 2. Since the layer 2b is as low as 4 in dielectric constant, it allows the width of the interconnection 3 formed in it or on its surface to be increased to reduce the transmission loss, thereby matching it. Thus, the interconnection loss, power consumption, distortion and noise can be reduced.
COPYRIGHT: (C)1997,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、超小型の無線通信モジュール、特に携帯通信端末に用いられる無線通信モジュールに関する。 The present invention relates to the ultra-small wireless communication module, and more particularly to a wireless communication module used in a portable communication terminal.

【0002】 [0002]

【従来の技術】従来の無線通信モジュールの実装形態を図6に示す。 BACKGROUND OF THE INVENTION The implementation of a conventional wireless communication module shown in FIG. ICなどの高周波部品のベアチップ42 Bare chip 42 of the high-frequency components such as IC
が、セラミック多層基板41に接着され、かつ、セラミック多層基板41に形成されたパッド43にワイヤボンディングされている。 But it is bonded to the ceramic multilayer substrate 41 and are wire-bonded to the pads 43 formed on the ceramic multilayer substrate 41.

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、従来の無線通信モジュールは、ワイヤボンディングを実施するに当たり、ワイヤ接続のパッド43を設けるスペースがセラミック多層基板41に必要となり、実装密度を向上させることができなかった。 [SUMMARY OF THE INVENTION However, the conventional wireless communication module, carrying out the wire bonding, space for providing the pad 43 of the wire connection is required for the ceramic multilayer substrate 41, it is possible to improve the mounting density There was no. また、セラミック多層基板41の熱抵抗が大きいために、実装密度を上げると装置温度が上昇していた。 Further, in the thermal resistance of the ceramic multilayer substrate 41 is large, the device temperature increase packing density was increased. また、セラミック多層基板41の誘電率εrが、例えばεr=8と、高いので、整合を取るために配線44が細くなりすぎて配線44の配線損失が大きくなり、したがって消費電力、雑音とも大きくなっていた。 Further, the dielectric constant .epsilon.r of the ceramic multilayer substrate 41, for example a .epsilon.r = 8, is higher, the matching wiring loss of the wiring 44 is the wiring 44 becomes too thin increases to take, thus becomes the power consumption, noise also increases which was.

【0004】そこで、本発明は、バンプを形成した高周波部品のチップを、金属ベース薄膜多層基板にフリップチップ実装することにより、実装密度を向上させて小形化を図り、配線損失、消費電力および雑音を低減した無線通信モジュールを提供することを目的とする。 [0004] Therefore, the present invention provides a high-frequency component of the chip forming the bumps by flip-chip mounted on the metal base thin-film multilayer substrate, to improve the mounting density achieving miniaturization, the wiring loss, power consumption and noise and to provide a wireless communication module having reduced.

【0005】 [0005]

【課題を解決するための手段】本発明は、上記目的を達成するために、下記の手段を採ることを特徴とする。 SUMMARY OF THE INVENTION The present invention, in order to achieve the above object, characterized in that it takes the following means. 1. 1. 金属をベースとする低誘電率の薄膜多層基板上に、 Metal in the low dielectric constant of the thin-film multilayer substrate based,
高周波部品のチップをフリップチップ実装してなる無線通信モジュール。 Wireless communication module comprising the high-frequency component of the chip by flip-chip mounting.

【0006】2. [0006] 2. 上記1記載の無線通信モジュールが、 Wireless communication module of the one described,
テープ・キャリア・パッケージに接続されてなる無線通信モジュール。 Wireless communication module formed by connecting to a tape carrier package.

【0007】3. [0007] 3. 前記薄膜多層基板に形成された凹部に、前記チップが実装されてなる上記1記載の無線通信モジュール。 Wherein the recess formed in the thin-film multilayer substrate, the wireless communication module of claim 1, wherein the said chip mounted.

【0008】以上のように、本発明は、バンプを形成した高周波部品のチップを、金属ベース薄膜多層基板にフリップチップ実装することにより、チップの実装密度が向上し、配線損失、消費電力、雑音が低減し、高周波特性と熱放散特性も向上する。 [0008] As described above, the present invention provides a high-frequency component of the chip forming the bumps by flip-chip mounted on the metal base thin-film multilayer substrate, improved mounting density of chips, wiring loss, power consumption, noise There is reduced, also improved high-frequency characteristics and heat dissipation characteristics. また、実装形態としてテープ・キャリア・パッケージ(TCP)を使用することにより、ワイヤボンディングに比べて、インダクタンスを軽減でき高周波特性が改善される。 Further, by using a tape carrier package (TCP) as the implementations, as compared with the wire bonding, high-frequency characteristics are improved can reduce inductance.

【0009】また、金属ベース薄膜多層基板の誘電体層に設けた凹部にチップを載置し、かつ、薄膜多層基板の誘電体層の上面にグランド電極を形成しているので、放熱特性が向上し、併せて妨害波の外部からの飛来および内部回路からの放射を防止することができる。 [0009] The chip is placed into the recess provided in the dielectric layer of the metal base thin-film multilayer substrate, and, since the forming ground electrodes on the top surface of the dielectric layer of the thin-film multilayer substrate, improved heat dissipation characteristics and the radiation from flying and internal circuitry from external disturbance can be prevented together.

【0010】 [0010]

【発明の実施の形態】以下に、本発明の実施例について図面を参照して説明する。 DETAILED DESCRIPTION OF THE INVENTION Hereinafter, will be described with reference to the accompanying drawings embodiments of the present invention. 図1は第1実施例の無線通信モジュール1の斜視図を示し、図2は図1に示す無線通信モジュール1の概略の側面図である。 Figure 1 shows a perspective view of the wireless communication module 1 of the first embodiment, FIG. 2 is a side view of a schematic of a radio communication module 1 shown in FIG. 両図において、 In both figures,
2は薄膜多層基板で、金属ベース2aの上に誘電率εr 2 is a thin-film multilayer substrate, dielectric constant εr on the metal base 2a
=4のポリイミド樹脂、エポキシ樹脂などの誘電体層2 = 4 of the polyimide resin, the dielectric layer 2, such as an epoxy resin
bを形成し、この誘電体層2b中およびその表面に配線3を形成したものである。 b is formed, it is obtained by forming the wiring 3 in the dielectric layer 2b and in its surface. この薄膜多層基板2の誘電体層2bは、誘電率εrが4以下と低いため、この誘電体層2b中あるいはその表面に形成される配線3の幅を従来よりも大きくして伝送損失を少なくし、整合を取ることができる。 Dielectric layer 2b of the thin-film multilayer substrate 2, since the dielectric constant εr of 4 or less and low, less transmission loss widths of the wiring 3 formed on the dielectric layer 2b during or its surface is larger than the conventional and, it is possible to take the matching. このため、配線損失、消費電力、歪みおよび雑音が低減する。 Therefore, wiring loss, power consumption, distortion and noise are reduced.

【0011】薄膜多層基板2の誘電体層2aの表面に形成された配線3には、高周波回路の能動および受動の高周波部品のチップ4がそのバンプ4aにより接続される。 [0011] dielectric layer 2a wiring 3 formed on the surface of the thin-film multilayer substrate 2, the chip 4 of active and passive RF components of the high frequency circuits are connected by the bumps 4a. この高周波部品は、例えば、ガリヒソ・パワーモジュール(GaAs PA/Mod )、高周波SAWフィルタ、誘電体フィルタ、電圧制御発振器、ガリヒソ・ローノイズアンプ・ミキサー(GaAs LNA・MIX)、SAWディスクリミネータ、シリコン・デモジュレータ(Si Demod)、中間周波SAWフィルタなどよりなる。 The high-frequency component, for example, Garihiso power module (GaAs PA / Mod), high-frequency SAW filter, dielectric filter, a voltage controlled oscillator, Garihiso low noise amplifier mixer (GaAs LNA-MIX), SAW discriminator, Silicon demodulator (Si Demod), composed of such as an intermediate frequency SAW filter. また、5は薄膜多層基板2の表面の配線3から、金属ベース2aに至るビアホールで、チップ4の発熱をバンプ4aおよびビアホール5を介して金属ベース1に逃がすと同時に、グランド接続をも兼ねるものである。 Further, 5 from the wiring 3 of the surface of the thin-film multilayer substrate 2, via hole reaching the metal base 2a, and at the same time released to the metal base 1 via the bumps 4a and the via hole 5 to heat generation of the chip 4, which also serves as a ground connection it is.

【0012】つぎに、本発明の第2実施例について図3 [0012] Next, FIG. 3 for the second embodiment of the present invention
および図4を参照して説明する。 And it will be described with reference to FIG. 図3において、Aはテープ・キャリア・パッケージ(TCP)20を示し、B In FIG. 3, A represents a tape carrier package (TCP) 20, B
は図1に示す無線通信モジュール1を示す。 Shows a wireless communication module 1 shown in FIG. このTCP The TCP
20は、無線通信モジュール1の配線端子3aに対応する位置にフィンガー端子21を有する。 20 has a finger pin 21 at a position corresponding to the wiring terminal 3a of the wireless communication module 1. 無線通信モジュール1の配線端子3aには、バンプ3bが形成されている。 The wiring terminals 3a of the wireless communication module 1, the bump 3b is formed. そして、図4に示すように、無線通信モジュール1 Then, as shown in FIG. 4, a wireless communication module 1
の上に、TCP20を載置して、そのフィンガー端子2 On top of, and it placed the TCP20, the finger terminal 2
1の先端をバンプ3b上に当接し熱圧着して接続する。 1 of the tip connecting to contact thermocompression bonding on the bump 3b.
このようにして、TCP20に複数個の無線通信モジュール1が接続されることになる。 In this manner, so that the plurality of wireless communication module 1 are connected to the TCP 20. この無線通信モジュール1をセット基板に実装するときには、破線で示す部位をカットして接続することになる。 When implementing this wireless communication module 1 on printed circuit boards will be connected by cutting the portion indicated by a broken line.

【0013】本実施例においては、無線通信モジュール1がボンディング・ワイヤに比較して、かなり太めのT [0013] In this embodiment, the wireless communication module 1 compares the bonding wire, rather thick T
CP20のフィンガー端子21により接続されるので、 Because it is connected by the finger terminals 21 of CP20,
インダクタンスが小さくなり高周波特性が良好となる。 Inductance is high-frequency characteristics is improved reduced.

【0014】つぎに、本発明の第3実施例について図5 [0014] Next, a third embodiment of the present invention FIG. 5
を参照して説明する。 With reference to the description. 同図において、30は本実施例の無線通信モジュールを示す。 In the figure, 30 denotes a wireless communication module of the present embodiment. 金属ベース31の上には樹脂などの誘電体層32が形成され、この誘電体層32中には薄膜多層配線32aが形成され、その表面にはグランド電極32bが形成されている。 On the metal base 31 is formed a dielectric layer 32, such as a resin, this is in the dielectric layer 32 thin-film multilayer wiring 32a is formed, the ground electrode 32b is formed on the surface thereof. このグランド電極3 The ground electrode 3
2bは破線で示すように、金属ベース31とビアホール、側面短絡電極などにより接続されている。 2b, as indicated by a broken line, the metal base 31 and the via-hole are connected by such side short-circuit electrodes. 33は誘電体層32を一部削除して形成した凹部で、この凹部3 33 is a recess formed by removing part of the dielectric layer 32, the recess 3
3の底面は誘電体層32よりなり、その底面の誘電体層32の一部に薄膜多層配線32aが露出している。 3 of the bottom is made of a dielectric layer 32, a thin film multi-layer wiring 32a is exposed to a portion of the dielectric layer 32 of the bottom surface. そして、この露出している薄膜多層配線32aにチップ4がそのバンプ4aを介して接続され、このチップ4は凹部33中に収納された構造となる。 Then, the chip 4 to the thin-film multilayer wiring 32a that this exposure are connected via the bumps 4a, the chip 4 becomes housed in the recess 33 structure.

【0015】本実施例は、誘電体層32の一部に凹部3 [0015] The present embodiment, the recess 3 in a portion of the dielectric layer 32
3を設けて、この凹部33の底面の誘電体層32の厚さを薄くしているので、その熱抵抗が下がり、チップ4の発生熱を金属ベース31に容易に放熱することができる。 3 is provided, since the thickness of the bottom surface of the dielectric layer 32 of the recess 33, the heat resistance is lowered, the heat generated by the chip 4 can be easily dissipated to the metal base 31. また、グランド電極32bを誘電体層32の上面に設けているので、妨害波の外部からの飛来および内部回路からの放射を防止することができる。 Further, since the provided ground electrode 32b on the upper surface of the dielectric layer 32, it is possible to prevent the radiation from flying and internal circuitry from external disturbance.

【0016】 [0016]

【発明の効果】本発明は、バンプを形成した高周波部品のチップを、金属をベースとする薄膜多層基板にフリップチップ実装するので、実装密度が向上して小形化を図ることができ、併せて配線損失、消費電力および雑音も低減することができる。 According to the present invention, a high-frequency component of the chip forming the bump, since the flip-chip mounted on the thin-film multilayer substrate based on metal can packing density improved made compact, together wiring loss, power consumption and noise can be reduced.

【0017】また、実装形態としてTCPを採用した場合には、ワイヤボンディングに比べて、インダクタンスを軽減でき高周波特性が改善できる。 Further, in the case of employing TCP as implementation, as compared with the wire bonding can be improved high-frequency characteristics can reduce inductance.

【0018】また、金属ベース薄膜多層基板の誘電体層に凹部を設け、この凹部にチップを載置し、かつ、誘電体層の上面にグランド電極を形成しているので、熱放散特性が向上すると共に、妨害波の外部からの飛来および内部回路からの放射を防止することができる。 Further, a recess provided in the dielectric layer of the metal base thin-film multilayer substrate, placing the chip in the recess, and, since the forming ground electrodes on the top surface of the dielectric layer, improving heat dissipation characteristics while, it is possible to prevent radiation from flying and internal circuitry from external disturbance.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明の無線通信モジュールの第1実施例の概略形態の斜視図 Perspective view of a schematic configuration of a first embodiment of a wireless communication module of the present invention; FIG

【図2】 図1の一側面の概略形態図 2 is a schematic configuration diagram of an aspect of FIG. 1

【図3】 本発明の無線通信モジュールの第2実施例を示すもので、AはTCPの斜視図、Bは無線通信モジュールの斜視図 [Figure 3] shows the second embodiment of the wireless communication module of the present invention, A is a perspective view of a TCP, B is a perspective view of a wireless communication module

【図4】 図1に示すTCPに無線通信モジュールを接続した場合の斜視図 4 is a perspective view of a case of connecting the wireless communication module TCP shown in FIG. 1

【図5】 本発明の無線通信モジュールの第3実施例の概略形態図 Figure 5 is a schematic configuration diagram of a third embodiment of the wireless communication module of the present invention

【図6】 従来の無線通信モジュールの概略形態の斜視図 6 is a perspective view of a schematic configuration of a conventional wireless communication module

【符号の説明】 DESCRIPTION OF SYMBOLS

1、30 無線通信モジュール 2 薄膜多層基板 2a、31 金属ベース 2b、32 誘電体層 3、32a 配線 4 チップ 4a バンプ 5 ビアホール 32b グランド電極 1,30 wireless communication module 2 thin-film multilayer substrate 2a, 31 metal base 2b, 32 dielectric layer 3,32a wiring 4 chips 4a bumps 5 hole 32b ground electrode

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 金属をベースとする低誘電率の薄膜多層基板上に、高周波部品のチップをフリップチップ実装してなる無線通信モジュール。 1. A metal in a low dielectric constant thin-film multilayer substrate based, wireless communication module comprising the high-frequency component of the chip by flip-chip mounting.
  2. 【請求項2】 請求項1記載の無線通信モジュールが、 2. A wireless communication module of claim 1 wherein is
    テープ・キャリア・パッケージに接続されてなる無線通信モジュール。 Wireless communication module formed by connecting to a tape carrier package.
  3. 【請求項3】 前記薄膜多層基板に形成された凹部に、 To 3. A recess formed in the thin-film multilayer substrate,
    前記チップが実装されてなる請求項1記載の無線通信モジュール。 The wireless communication module according to claim 1, wherein the chip is mounted.
JP30302795A 1995-11-21 1995-11-21 Radio communication module Pending JPH09148373A (en)

Priority Applications (1)

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JP30302795A JPH09148373A (en) 1995-11-21 1995-11-21 Radio communication module

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Application Number Priority Date Filing Date Title
JP30302795A JPH09148373A (en) 1995-11-21 1995-11-21 Radio communication module
GB9624155A GB9624155D0 (en) 1995-11-21 1996-11-20 Radio communications module
DE1996148308 DE19648308A1 (en) 1995-11-21 1996-11-21 Radio communication module

Publications (1)

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JPH09148373A true true JPH09148373A (en) 1997-06-06

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Country Link
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DE (1) DE19648308A1 (en)
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WO2003058813A1 (en) * 2001-12-28 2003-07-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module
US7088983B2 (en) 1999-02-03 2006-08-08 Rohm Co., Ltd. Semiconductor device for radio communication device, and radio communication device using said semiconductor device

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GB2341482B (en) * 1998-07-30 2003-07-09 Bookham Technology Ltd Lead frame attachment for integrated optoelectronic waveguide device
US6018192A (en) * 1998-07-30 2000-01-25 Motorola, Inc. Electronic device with a thermal control capability
WO2001003188A1 (en) * 1999-07-01 2001-01-11 Intermec Ip Corp. Integrated circuit attachment process and apparatus
JP4049239B2 (en) * 2000-08-30 2008-02-20 Tdk株式会社 The method of manufacturing radio frequency module parts including surface acoustic wave device

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US5194933A (en) * 1990-10-05 1993-03-16 Fuji Electric Co., Ltd. Semiconductor device using insulation coated metal substrate
US5297333A (en) * 1991-09-24 1994-03-29 Nec Corporation Packaging method for flip-chip type semiconductor device
DE4222402A1 (en) * 1992-07-08 1994-01-13 Daimler Benz Ag Arrangement for the multiple wiring Mulichipmodulen
JP3110922B2 (en) * 1993-08-12 2000-11-20 富士通株式会社 Multi-chip module
JP3194553B2 (en) * 1993-08-13 2001-07-30 富士通株式会社 A method of manufacturing a semiconductor device
US5402003A (en) * 1993-11-12 1995-03-28 Trw Inc. Low dielectric constant interconnect for multichip modules
WO1996017505A1 (en) * 1994-12-01 1996-06-06 Motorola Inc. Method, flip-chip module, and communicator for providing three-dimensional package

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US7088983B2 (en) 1999-02-03 2006-08-08 Rohm Co., Ltd. Semiconductor device for radio communication device, and radio communication device using said semiconductor device
WO2003058813A1 (en) * 2001-12-28 2003-07-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module
US6937114B2 (en) 2001-12-28 2005-08-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module

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GB9624155D0 (en) 1997-01-08 grant
GB2307596A (en) 1997-05-28 application
DE19648308A1 (en) 1997-05-22 application

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