WO2011104774A1

WO2011104774A1 - Semiconductor device

Info

Publication number: WO2011104774A1
Application number: PCT/JP2010/005170
Authority: WO
Inventors: 修石川; 隆弘横山; 順治伊藤
Original assignee: パナソニック株式会社
Priority date: 2010-02-23
Filing date: 2010-08-23
Publication date: 2011-09-01
Also published as: JP2011176061A

Abstract

Disclosed is a semiconductor device (100) provided with an insulating substrate (101), insulating films (102a to 102c) which are formed on the insulating substrate (101), a silicon island region (103) which is formed in the shape of an island on insulating film (102a) and which is a silicon layer formed with a transistor (Tr), a passive circuit region which is formed outside the silicon island region (103) and which has a capacitor (C), electrode pads (P1 to P5) which are formed outside the silicon island region (103) and outside the passive circuit region, a SAW filter (SAW) which is mounted on the electrode pads (P1 to P5), and a second wiring layer (104) for connecting the transistor (Tr), the capacitor (C), and the electrode pads (P1 to P5), wherein the transistor (Tr), the capacitor (C), the SAW filter (SAW), and the second wiring layer (104) configure a predetermined circuit.

Description

Semiconductor device

The present invention relates to a semiconductor device.

Communication devices such as mobile phones are required to integrate communication functions corresponding to different communication methods and different frequencies in the same device, and there is a strong demand for further enhancement of functionality and size. It is necessary to integrate a signal processing circuit block having a plurality of different functions such as a digital signal processing block and a high-frequency analog signal processing block on one chip. Furthermore, there is a strong demand for integrating a large signal block for transmission and a very small small signal block for reception on the same chip, although they are the same high-frequency analog signal processing block.

In response to these technical demands for high integration, RFICs (Radio Frequency Integrated Circuits) using silicon semiconductors and MMICs (Microwave Monolithic Integrated Circuits) using semi-insulating substrates such as GaAs are high frequency ICs. Developed and mass produced. However, these RFICs and MMICs are so-called single function ICs such as only a switch circuit function and a power amplification circuit function, and their applications are extremely limited.

Also, these ICs and electronic components that cannot be integrated on a semiconductor chip, such as filters and antenna duplexers, are often combined and mounted on a multilayer ceramic substrate or multilayer resin substrate to be used as a high-frequency module.

By the way, mobile phones have been used all over the world since the early 1990s, and GaAs, which is a compound semiconductor, has been the main device for mobile phones as a device used for transmission and reception. In recent years, as multi-band / multi-mode mobile phones have been demanded as described above, GaAs devices as compound semiconductors with problems in integration and interface circuits with silicon LSIs have been avoided, and silicon semiconductor devices are transmitted. Research to apply to and reception is spreading.

More recently, SOS (Silicon-on-Sapphire) devices in which a silicon layer is formed on a sapphire substrate as a silicon-based high-frequency semiconductor are attracting attention again. The reason is that the SOS device can realize a degree of integration and miniaturization that cannot be achieved by a GaAs device, and can realize high-frequency characteristics equivalent to or higher than those of a GaAs device. Unlike SOS devices, which were 30 years ago when SOS devices were first developed, their manufacturing methods have been innovative.

As an SOS substrate manufacturing method, in addition to the epitaxial method that has been performed for several decades, a method of improving the epitaxial method and recrystallizing the amorphous silicon layer in the lateral direction has been put into practical use for about 10 years ago. ing. Furthermore, in recent years, completely different from the epitaxial method, a completely new SOS made by a bonding method using a hydrogen bond or van der Waals bond generated by bringing a sapphire substrate and a silicon substrate having an oxide film formed thereon into close contact therewith. System boards have also been proposed and some have been announced. The layer structure of the new substrate made by this bonding method is the structure of silicon layer-oxide film layer-sapphire substrate in order from the top of the main surface side. The substrate is a sapphire substrate. It is often classified as an SOS-based device, not a silicon-on-insulator substrate.

Now, as a semiconductor device in which a predetermined circuit combining a semiconductor chip and a passive component is configured, a configuration in which the semiconductor chip and the passive component are mounted on a wiring board has been proposed (for example, see Patent Document 1).

FIG. 11 is a plan view showing the structure of a conventional semiconductor device. FIG. 12 is a plan view showing the configuration of the conventional semiconductor device shown in FIG. 11 with the heat dissipation member omitted.

A semiconductor device 801 shown in FIG. 11 is a so-called high-frequency module, and specifically has a power amplification function for transmission located immediately below an antenna of a mobile phone. The semiconductor device 801 includes a wiring board 802 and

passive components

804a and 804b mounted on the wiring board 802. These

passive components

804a and 804b are mounted on the wiring board 802 so that the substrate-side electrode 812a and the electrodes 809 of the

passive components

804a and 804b are electrically connected. As the passive components of the semiconductor device 801, two types of passive components 804a having a height higher than that of the semiconductor chip 803 and passive components 804b having a height lower than that of the semiconductor chip 803 are used. Of these, as shown in FIG. The high-passive passive component 804a is mounted outside the heat dissipation member 805.

Also, as shown in FIG. 12, the passive component 804b having a lower height than the semiconductor chip 803 is disposed inside the heat dissipation member 805. The electrodes 809 and the substrate-side electrodes 812a of the

passive components

804a and 804b are usually electrically joined and physically fixed simultaneously using a joining material 807 such as solder. Further, the front surface 803a of the semiconductor chip 803 is mounted in a so-called face-down direction toward the main surface of the wiring board 802, and the back surface of the semiconductor chip 803 faces the upper surface.

FIG. 13 is a cross-sectional view taken along line X-X ′ of the conventional semiconductor device shown in FIG.

In FIG. 13, a wiring board 802 is formed by laminating a large number of insulator layers 811 and has a metal electrode wiring layer in its inner layer. The back surface 803d of the semiconductor chip 803 located on the main surface 802a side of the wiring substrate 802 and the ceiling portion 805b covering the upper portion of the semiconductor chip 803 are physically fixed by a joint portion 805d with the heat dissipation member of the semiconductor chip 803. The marking 806 indicating the model number of the product of the semiconductor device is described on the surface 805c of the ceiling portion of the heat radiation member. As shown in FIG. 13, the back surface 803 d of the semiconductor chip 803 is joined to a ceiling portion 805 b that covers the upper portion of the semiconductor chip 803 via a joint portion 805 d with the heat dissipation member of the semiconductor chip 803. Further, the electrode on the surface 803 a of the semiconductor chip 803 is electrically connected to the substrate side electrode 812 a through the bump electrode 808.

The heat generated on the surface 803a of the semiconductor chip 803 configured as described above is also dissipated from the surface 803a of the semiconductor chip 803.

Further, the heat generated on the front surface 803a of the semiconductor chip 803 is conducted to the back surface 803d of the semiconductor chip 803, and enters the ceiling portion 805b that covers the upper portion of the semiconductor chip 803 via the joint portion 805d with the heat dissipation member of the semiconductor chip 803. It is transmitted. Then, the light is transmitted from the ceiling portion 805 b to the side wall portion 805 a surrounding the semiconductor chip 803. The side wall portion 805a is located on the lower surface 802b of the wiring board 802 through the bonding material 807, the board-side electrode 812a, and the via hole (through hole) 810 penetrating the wiring board 802 and embedding the metal electrode, for example, grounding It is electrically and thermally connected to a reference potential supply terminal 812c that provides a potential and has a large area. Therefore, the heat generated on the surface 803a of the semiconductor chip 803 is transmitted to the reference potential supply terminal 812c.

Thus, the conventional semiconductor device 801 has a structure that solves the heat generation problem of the semiconductor chip 803.

FIG. 14 is a circuit block diagram showing a circuit configuration of a semiconductor chip of a conventional semiconductor device.

The internal circuit of the semiconductor chip 803 included in the conventional semiconductor device 801 has a power amplification function for transmission as described above. Specifically, the internal circuit of the semiconductor chip 803 includes two power amplifier circuits (for example, for GSM 900 MHz band and DCS 1800 MHz band) in which three stages of transistors 813a are connected in series. Yes. The plurality of power amplifier circuits of these two systems are connected to a control circuit 813b, and the control circuit 813b controls on / off of the bias circuits of the plurality of power amplifier circuits of the specific system in accordance with a signal input to the Vcontrol terminal. To do.

With the semiconductor chip 803 configured in this manner, for example, a GSM 900 MHz band signal is input to the GSM input terminal Pin (GSM) and amplified by about 30 dB, and a maximum of about 2 watts is obtained from the GSM output terminal Pout (GSM). Is output. Similarly, the DCS 1800 MHz band signal is input to the GSM input terminal Pin (DCS), amplified by about 30 dB, and output from the DCS output terminal Pout (DCS) at about 1 watt or less. Which of these two systems is operated can be controlled by the Vcontrol terminal.

International Publication No. 2006/001087

However, the conventional semiconductor device described above has a large number of parts and has a very large external dimension, which is so large that the conventional semiconductor device cannot be built in when the conventional semiconductor device is arranged in a mobile phone that supports multiband or the like. End up. That is, the size and number of the wiring board 802, the semiconductor chip 803, and the passive component 804 are large.

Furthermore, in order to improve the heat dissipation of the semiconductor chip 803, it is necessary to separately provide a heat dissipation member 805, so it is more difficult to reduce the size of the semiconductor device. Furthermore, since it is necessary to join the back surface 803d of the semiconductor chip 803 and the heat dissipation member 805, it is necessary not only to increase the man-hours but also to produce while clearing strict management standards such as height adjustment. For example, the throughput during production of semiconductor devices could not be improved.

Therefore, an object of the present invention is to realize a small semiconductor device in which a predetermined circuit is configured.

In order to solve the above problems, a semiconductor device according to the present invention includes an insulating substrate, an insulating film formed on the insulating substrate, an island shape formed on the insulating film, and a first active device formed. A first silicon island region which is a silicon layer; a passive circuit region having a passive circuit formed outside the first silicon island region; an electrode formed outside the first silicon island region and outside the passive circuit region; An electronic component mounted on the electrode, and a wiring for connecting the first active device, the passive circuit, and the electrode, the first active device, the passive circuit, the electronic component, and the wiring Constitutes a predetermined circuit.

This makes it possible to realize an extremely small semiconductor device in which a predetermined circuit is configured. Further, the configuration can be simplified. That is, in the semiconductor device according to the present invention, the silicon island region is on the insulating film located at a predetermined location on the insulating substrate, and the passive circuit region is outside the silicon island region. These silicon island regions and passive circuit regions are integrated on an insulating substrate and can be processed by semiconductor process technology, so the resistance and capacitance configured as passive circuits are extremely small, in units of several tens of microns. Can be made with. Furthermore, electronic components are mounted on the electrodes. However, in the semiconductor device of the present invention, passive components such as resistors, capacitors, and inductors can be formed on the insulating substrate simultaneously with the active devices. There is no need to put it on. Instead of having to place passive components as new electronic components, bandpass filters, antenna duplexers, and isolators that are often used in mobile phone sets, such as bandpass filters, are conventionally mounted on printed circuit boards of mobile phone sets. Such electronic components can also be mounted on a semiconductor device. In other words, electronic components that are conventionally mounted on a printed circuit board can be mounted in the vacant space. Therefore, for example, further miniaturization as a portable device can be realized.

That is, since the passive circuit can be manufactured by the semiconductor process technology as described above, the components conventionally mounted on the printed circuit board can be mounted on the insulating substrate on which the silicon island region and the passive circuit region are formed. It can be realized as one communication module. Therefore, a small semiconductor device having a predetermined circuit can be realized. As a result, the mobile device using the semiconductor device according to the present invention can be miniaturized.

Further, the predetermined circuit may be a high frequency circuit.

Thereby, a semiconductor device of a high frequency circuit can be realized. A high frequency circuit is a circuit in which the frequency of a signal to be handled is high. The high frequency is, for example, a frequency used for wireless communication, specifically a frequency used for communication of a mobile phone terminal, and more specifically, 1920 MHz-1980 MHz Band I, 1850 MHz-1910 MHz Band II, 1710 MHz- Band III of 1785 MHz, Band IV of 1710 MHz-1755 MHz, Band V of 824 MHz-849 MHz, Band VI of 830 MHz-840 MHz, Band VIII of 880 MHz-915 MHz, and Band IX of 1749.9 MHz-1784.9 MHz.

Further, the insulating film below the first silicon island region, the insulating film below the passive circuit, and the insulating film below the electronic component may be separated from each other.

Thereby, the degree of isolation (so-called isolation characteristics) between the first active device, the passive circuit, and the electronic component can be increased, and the high-frequency characteristics of the semiconductor device are improved.

The insulating film may be formed on the entire surface of the insulating substrate.

As a result, the adhesion between the insulating substrate and the insulating film can be made extremely strong, so that problems such as peeling of the insulating film do not occur, and a stable semiconductor device can be manufactured during mass production. In other words, the yield of the manufacturing process is improved. Furthermore, by forming this insulating film thick, it is possible to increase the Q value, which is one measure of the high-frequency performance of the passive components constituting the passive circuit.

The semiconductor device further includes a second silicon island region that is a silicon layer formed in an island shape on the insulating film and on which the second active device is formed, and the second active device includes the semiconductor A switch that selectively switches connection and disconnection between an antenna connected to the device and the predetermined circuit may be used.

This can be realized as a single module including a switch connected to the antenna.

The semiconductor device further includes a third silicon island region that is a silicon layer formed in an island shape on the insulating film and on which a third active device is formed, and the third active device includes the predetermined active device. A microcomputer for controlling the circuit may be used.

This makes it possible to realize a control circuit that controls a predetermined circuit. For example, the control circuit includes a circuit that switches an operation mode (for example, a normal mode and a power consumption reduction mode) of a predetermined circuit. Further, a circuit for switching connection of a high-frequency switch mounted on a semiconductor device and a circuit for switching a transmission / reception frequency can be given.

The first active device may be a transistor, and the microcomputer may include a bias control circuit that controls a bias voltage of the transistor.

The microcomputer may have an interface circuit with an external device connected to the semiconductor device.

The electrode is formed on a surface of the insulating substrate opposite to the surface on which the insulating film is formed, and the semiconductor device further penetrates the insulating substrate and connects the wiring and the electrode. An electrode may be provided.

This makes it possible to further reduce the size.

The insulating substrate may be a sapphire substrate, the insulating film may be silicon dioxide, and the insulating substrate and the silicon island region may be bonded to each other via the insulating film.

As a result, since the insulating substrate and the silicon island region are bonded to each other through the insulating film without using an adhesive or the like, for example, a heat dissipating member such as the heat dissipating member 805 in FIGS. 11 to 13 is unnecessary. Thus, the size can be further reduced. The heat generated from the silicon island region is efficiently diffused to the sapphire substrate as the insulating substrate, and there is no problem even if the heat radiating member necessary for the conventional semiconductor device is omitted.

In addition, since the insulating substrate and the silicon island region are bonded together by using van der Waals bonds, hydrogen bonds, etc., which are generated by bringing the insulating substrate and the silicon island region into close contact with each other. In addition to simplification, there is no peeling of the insulating film and the stability of the semiconductor device during mass production can be increased.

According to the present invention, a small semiconductor device having a predetermined circuit can be realized.

FIG. 1 is a plan view showing an example of the configuration of the semiconductor device according to the first embodiment. FIG. 2 is a cross-sectional view taken along line A-A ′ of the semiconductor device shown in FIG. FIG. 3 is a circuit diagram showing an equivalent circuit of the semiconductor device shown in FIG. FIG. 4 is a plan view showing an example of the configuration of the semiconductor device according to the second embodiment. FIG. 5 is a sectional structural view taken along line B-B ′ of the semiconductor device shown in FIG. 4. FIG. 6 is a plan view showing an example of the configuration of the semiconductor device according to the third embodiment. FIG. 7 is a plan view showing an example of the configuration of the semiconductor device according to the fourth embodiment. FIG. 8 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the fifth embodiment. FIG. 9 is a plan view showing an example of the configuration of the semiconductor device according to the sixth embodiment. FIG. 10 is a circuit diagram showing an equivalent circuit of the semiconductor device shown in FIG. FIG. 11 is a plan view showing the structure of a conventional semiconductor device. FIG. 12 is a plan view showing the configuration of the conventional semiconductor device shown in FIG. 11 with the heat dissipation member omitted. FIG. 13 is a cross-sectional view taken along line X-X ′ of the conventional semiconductor device shown in FIG. FIG. 14 is a circuit block diagram showing a circuit configuration of a semiconductor chip of a conventional semiconductor device.

Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, common components are denoted by the same reference numerals or symbols. The thicknesses of layers and regions in the drawings are exaggerated and simplified for the sake of clarity in the specification. In some cases, the structure is shown in a perspective view for easy understanding.

(Embodiment 1)
The semiconductor device according to the present embodiment includes an insulating substrate, an insulating film formed on the insulating substrate, and a silicon layer formed in an island shape on the insulating film and having a first active device formed thereon. A silicon island region; a passive circuit region having a passive circuit formed outside the first silicon island region; an electrode formed outside the first silicon island region and outside the passive circuit region; and on the electrode An electronic component mounted thereon; and a wiring for connecting the first active device, the passive circuit, and the electrode. The first active device, the passive circuit, the electronic component, and the wiring include a predetermined circuit. Configure.

Thereby, a small semiconductor device in which a predetermined circuit is configured can be realized.

Hereinafter, the semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS.

1 is a plan view showing an example of the configuration of the semiconductor device according to the first embodiment, FIG. 2 is a cross-sectional view of the semiconductor device shown in FIG. 1, taken along the line AA ′, and FIG. 2 is a circuit diagram showing an equivalent circuit of the semiconductor device shown in FIG.

A semiconductor device 100 shown in FIGS. 1 and 2 has a high-frequency circuit and is a receiving semiconductor device used for, for example, a mobile phone. The semiconductor device 100 includes an insulating substrate 101, insulating films 102a to 102c, a silicon island region 103, and the like. First wiring layer 108, gate oxide film 105, interlayer insulating film 107, second wiring layer 104, bonding material 109, electrode pads P1 to P5, P_G1 to P_G3, RFin, P_Vdd, RFout1 and RFout2, A high frequency circuit having a SAW (Surface Acoustic Wave) filter SAW and including a transistor Tr, a capacitor C, and a SAW filter SAW as shown in FIG. 3 is realized. The transistor Tr is the first active device of the present invention, the capacitor C is the passive circuit of the present invention, and the SAW filter SAW is the electronic component of the present invention. In FIG. 1, the SAW filter SAW is shown in a semi-transparent view so that the electrode configuration located below can be easily seen.

The insulating substrate 101 is, for example, a sapphire substrate having a planar size of about 1 × 2 mm.

Each of the insulating films 102 a to 102 c is formed in an island shape on the insulating substrate 101. Specifically, it is, for example, a silicon dioxide film formed at a predetermined position on the main surface side of the sapphire substrate as the insulating substrate 101.

The silicon island region 103 is the first silicon island region of the present invention, and is formed on the insulating film 102a, and the transistor Tr is formed on the upper surface side. In other words, the silicon island region 103 is left above the insulating films 102a to 102c, and, for example, a MOS (Metal-Oxide-Silicon) type transistor Tr is formed.

A part of the first wiring layer 108 is used as the source electrode S, the drain electrode D, and the gate electrode G of the MOS transistor Tr, and the material is low resistance polysilicon or the like. Specifically, the first wiring layer 108 disposed on the gate oxide film 105 becomes the gate electrode G of the MOS transistor Tr. The other part of the first wiring layer 108 is used as one electrode of the capacitor C.

The gate oxide film 105 is, for example, silicon dioxide (SiO ₂ ), and is interposed between the gate electrode G and the silicon island region 103.

The interlayer insulating film 107 is, for example, SiO ₂ and is interposed between the first wiring layer 108 on the insulating film 102b and the second wiring layer 104 above the insulating film 102b. Thus, the capacitor C is realized by the first wiring layer 108 on the insulating film 102b, the interlayer insulating film 107, and the second wiring layer 104 above the insulating film 102b. That is, the capacitor C is a MIM (Metal Insulator Metal) capacitor.

The second wiring layer 104 is made of, for example, an aluminum material for connecting a lead-out electrode from the MOS transistor Tr to the outside and each circuit element to form a predetermined circuit. In the first embodiment of the present invention, circuit elements include the above-described MOS transistor Tr, MIM (Metal-Insulator-Metal) capacitor C, and predetermined electrodes P1 to P5 provided on the insulating substrate 101. It is a SAW filter SAW which is an electronic component to be mounted. That is, the second wiring layer 104 is the wiring of the present invention, and connects the transistor Tr, the capacitor C, and the SAW filter SAW. Further, the transistor Tr, the capacitor C, the SAW filter SAW, and the second wiring layer 104 constitute a predetermined circuit such as a receiving circuit of a mobile phone, for example.

The bonding material 109 is, for example, solder that electrically and physically connects the SAW filter SAW to the electrode pads P1 to P5. Specifically, the bonding material 109 connects the component electrode 110 of the SAW filter SAW and the electrode pads P1 to P5.

The electrode pads P1 to P5 correspond to the electrodes of the present invention and are formed outside the silicon island region 103 and outside the passive circuit region.

Here, in the present embodiment, the passive circuit region is a region where the capacitor C is formed, and specifically, a region where the interlayer insulating film 107 constituting the capacitor C is formed.

The electrode pads P_G1 to P_G3, RFin, P_Vdd, RFout1 and RFout2 are electrode pads for external connection of the semiconductor device 100. In the assembling process of the semiconductor device 100 and the package, bonding wires are formed on these electrode pads P_G1 to P_G3, RFin, P_Vdd, RFout1 and RFout2 to connect to the package or the like. Specifically, the electrode pads P_G1 to P_G3 are ground terminals connected to the ground, the electrode pad P_Vdd is a power supply terminal to which the voltage Vdd is supplied, and the electrode pad RFin is received by an antenna connected to the semiconductor device 100. The received signal is input to the semiconductor device 100, and the electrode pad RFout1 and the electrode pad RFout2 are output terminals of the semiconductor device 100.

The SAW filter SAW is a balanced output type SAW filter, which removes noise from an unbalanced high-frequency signal input via the electrode pad P1 and the bonding material 109, and outputs a balanced high-frequency signal from which the noise has been removed. . This SAW filter SAW is mounted by an electronic component high-speed mounting machine called a mounter after each circuit element other than the SAW filter SAW of the semiconductor device 100 is configured.

3 is implemented by the semiconductor device 100 configured as described above. Here, the receiving circuit shown in FIG. 3 will be briefly described.

The transistor Tr has a gate connected to the electrode pad RFin, a source connected to the electrode pad P_G1, and a drain connected to one end of the capacitor C. The drain is also connected to the electrode pad Vdd. In other words, this transistor is a source-grounded amplification transistor, for example, LNA (LowＬNoise Amplifier).

The DC component of the high frequency signal amplified by the transistor Tr is cut by the capacitor C and input to the SAW filter SAW.

Here, the high-frequency signal input to the SAW filter SAW is unbalanced, noise is removed by the SAW filter SAW, and the balanced high-frequency signal is output from the electrode pads RFout1 and RFout2. That is, balanced output is performed.

As described above, the receiving circuit realized by the semiconductor device 100 amplifies the input high frequency signal, removes noise, and outputs a balanced output.

As described above, the semiconductor device 100 according to this embodiment includes the insulating substrate 101, the insulating films 102a to 102c formed on the insulating substrate 101, the island shape on the insulating film 102a, and the transistor Tr. A silicon island region 103 which is a formed silicon layer, a passive circuit region having a capacitor C formed outside the silicon island region 103, and electrode pads P1 to P5 formed outside the silicon island region 103 and outside the passive circuit region And a SAW filter SAW mounted on the electrode pads P1 to P5 and a second wiring layer 104 for connecting the transistor Tr, the capacitor C, and the electrode pads P1 to P5, the transistor Tr, the capacitor C, and the SAW filter The SAW and the second wiring layer 104 constitute a receiving circuit.

Thereby, the semiconductor device 100 according to the present embodiment can be realized as an extremely small semiconductor device having a receiving circuit. For example, the size of the semiconductor device 100 can be about 1 mm × 2 mm in the plan view of FIG.

That is, there is a silicon island region 103 on the insulating film 102 a located at a predetermined location on the insulating substrate 101, and there is a passive circuit region where the capacitor C is formed outside the silicon island region 103. The silicon island region 103 and the passive circuit region are an integrated object formed on the insulating substrate 101 and can be processed by a semiconductor process technique, so that the silicon island region 103 and the passive circuit region can be formed in units of several tens of microns. That is, as described above, the capacitor C and the like can be manufactured by a semiconductor process technology, so that components conventionally mounted on a printed circuit board can be mounted on the insulating substrate 101 in which the silicon island region and the passive circuit region are formed. It can be realized as one communication module of a telephone.

In other words, in the semiconductor device 100, the SAW filter SAW is mounted on the insulating substrate 101 instead of the conventional printed circuit board. In other words, the semiconductor device 100 has the same size as that of a conventional semiconductor device, and there is a possibility that a communication module on which components conventionally mounted on a printed circuit board are mounted can be realized. For example, components mounted on a printed circuit board include a band pass filter, an antenna duplexer, and an isolator often used in a mobile phone set in addition to the SAW filter SAW.

In the semiconductor device 100 according to the present embodiment, the insulating substrate 101 is a sapphire substrate, the insulating films 102a to 102c are silicon dioxide, and the insulating substrate 101 and the silicon island region 103 are interposed via the insulating film 102a. It is stuck together.

Accordingly, since the insulating substrate 101 and the silicon island region 103 are bonded to each other through the insulating film 102a without using an adhesive or the like, for example, a heat radiating member such as the heat radiating member 805 in FIGS. A member becomes unnecessary and it can further reduce in size. Note that the heat generated from the silicon island region 103 is efficiently diffused to the insulating substrate 101, and there is no problem even if the heat radiating member necessary for the conventional semiconductor device is omitted.

In addition, in the semiconductor device 100 according to the present embodiment, the insulating film 102a, the insulating film 102b, and the insulating film 102c are separated from each other. Thereby, the degree of separation between the transistor Tr, the capacitor C, and the SAW filter SAW can be increased, and the high frequency characteristics of the semiconductor device 100 are improved.

Here, a method of bonding the insulating substrate 101 and the silicon island region 103 through the insulating film 102a will be described. Specifically, as a method of bonding the insulating substrate 101 and a silicon substrate having SiO ₂ on the surface because the surface is oxidized, hydrogen bonding or a fan generated by bringing the insulating substrate 101 and the silicon substrate into close contact with each other can be used. Bond and bond using Delwars bond. Then, after bonding, the silicon material in the unnecessary region and the SiO _{2 in the} unnecessary region are removed, and the insulating films 102a to 102c and the silicon island region 103, which are SiO ₂ necessary for forming a predetermined circuit, are locally formed. Leave behind.

By the above method, the insulating substrate 101 and the silicon island region 103 can be bonded to each other via the insulating film 102a.

As described above, the reason why the insulating films 102a to 102c are left locally is that, for example, the degree of isolation between the MOS transistor Tr and the capacitor C of the MIM is increased, the interaction due to the electromagnetic field is extremely reduced, and the malfunction is reduced. Because of that. A high-frequency circuit can be operated in a state close to an ideal state by electrically connecting independent circuit elements having low interaction due to an electromagnetic field, that is, independent circuit elements using the first wiring layer 108 and the second wiring layer 104. Will be able to.

(Embodiment 2)
The semiconductor device according to the second embodiment is substantially the same as the semiconductor device 100 according to the first embodiment, except that an insulating film is formed on the entire surface of the insulating substrate. Hereinafter, the semiconductor device according to the present embodiment will be described focusing on differences from the semiconductor device 100 according to the first embodiment.

Next, a semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS. 4 is a plan view showing an example of the configuration of the semiconductor device according to the second embodiment, and FIG. 5 is a cross-sectional view taken along line B-B ′ of the semiconductor device shown in FIG. 4.

The semiconductor device 200 according to the present embodiment shown in FIGS. 4 and 5 is substantially the same as the semiconductor device 100 according to the first embodiment shown in FIGS. 1 to 3, but instead of the insulating films 102a to 102c. The difference is that an insulating film 202 is formed on almost the entire main surface of the insulating substrate 101, and the silicon island region 103 is located on the insulating film 202.

As a result, the semiconductor device 200 according to the present embodiment can extremely increase the adhesion between the insulating substrate and the insulating film, so that the problem such as peeling of the insulating film does not occur and the semiconductor device is stable during mass production. Can be manufactured. In other words, the yield of the manufacturing process is improved. Furthermore, by forming this insulating film thick, it is possible to increase the Q value, which is one measure of the high-frequency performance of the passive components constituting the passive circuit.

Specifically, after the insulating substrate 101 and a silicon substrate having SiO ₂ on the surface due to oxidation of the surface are bonded together, unnecessary silicon material is removed, and SiO _{2 is applied} to almost the entire surface of the insulating substrate 101. At the same time, the silicon island region 103 is left locally. Thus, the SiO ₂ remaining on the entire surface becomes the insulating film 202.

In addition to reducing the peeling of the insulating film 202 from the insulating substrate 101 by leaving the insulating film 202 almost on the entire surface of the insulating substrate 101, the following effects can be obtained. The degree of adhesion between the first wiring layer 108 and the second wiring layer 104 and the insulating film 202 is stronger than the degree of adhesion between the first wiring layer 108 and the second wiring layer 104 and the insulating substrate 101. Therefore, the first wiring layer 108 and the second wiring layer 104 are not peeled off during the semiconductor process.

(Embodiment 3)
The semiconductor device according to the present embodiment includes a plurality of semiconductor devices 100 according to the first embodiment, and is a silicon layer that is formed in an island shape on the insulating film and has a second active device. The second active device is a switch that selectively switches between connection and disconnection of an antenna connected to the semiconductor device and a predetermined circuit. Furthermore, the semiconductor device according to the present embodiment has a third silicon island region that is a silicon layer formed in an island shape on the insulating film and on which the third active device is formed. This is a microcomputer for controlling the circuit.

Next, a semiconductor device according to Embodiment 3 of the present invention will be described with reference to FIG.

FIG. 6 is a plan view showing an example of the configuration of the semiconductor device according to the third embodiment. In the figure, an antenna ANT connected to the semiconductor device 300 is also shown.

A semiconductor device 300 shown in FIG. 6 includes a silicon island in which receiving circuits Rx1 to Rx3 having a configuration similar to that of the semiconductor device 100 according to the first embodiment of the invention shown in FIG. A region 311, a silicon island region 312 in which the microcomputer block 314 is formed, an insulating film 302 a, and an insulating film 302 b are included.

The reception circuits Rx1 to Rx3 have different reception frequencies. That is, it is a reception system with three different frequencies similar to the semiconductor device 100 according to the first embodiment of the present invention.

The high-frequency switch functional block 313 is a second active device of the present invention, and selectively connects the antenna ANT and any of the receiving circuits Rx1 to Rx3. That is, these three systems are switched. The high-frequency switch functional block 313 is formed in a silicon island region that is a silicon layer formed in an island shape on the insulating film 302a. The silicon island region 311 in which the high frequency switch functional block 313 is formed corresponds to the second silicon island region of the present invention.

The microcomputer block 314 corresponds to the third active device of the present invention, and receives and executes data exchange and command commands with the outside. Specifically, the microcomputer block 314 corresponds to the microcomputer of the present invention and controls the receiving circuits Rx1 to Rx3. Specifically, an interface circuit function corresponding to the interface circuit of the present invention that receives data exchange and command commands from the outside, a function control circuit function that performs switching of a high frequency switch, selection of a reception frequency, and the like, A bias control circuit function corresponding to the bias control circuit of the present invention for switching operation modes (for example, a mode for suppressing power consumption, raising / lowering the operation voltage, turning on / off the power supply, etc.), and temporarily using commands and frequency information as data. It has a memory function that can be saved and recalled automatically. That is, the microcomputer block 314 includes an interface circuit with external devices connected to the semiconductor device 300 and a bias control circuit that controls the bias voltages of the transistors Tr1 to Tr3 of the receiving circuits Rx1 to Rx3.

From the microcomputer block 314, an antenna control signal line 341 is drawn out and connected to the high frequency switch function block 313, and the switching of the high frequency switch is performed via the antenna control signal line 341. The microcomputer block 314 is formed in a silicon island region 312 which is a silicon layer formed in an island shape on the insulating film 302b. The silicon island region where the microcomputer block 314 is formed corresponds to the third silicon island region of the present invention.

Next, the operation of the semiconductor device 300 according to the present embodiment will be described. In FIG. 6, it is assumed that the antenna ANT has a capability of simultaneously receiving three frequencies, for example, a first frequency, a second frequency, and a third frequency.

The high frequency signal received by the antenna ANT is input to the antenna terminal SWa of the semiconductor device 300 of the present embodiment.

The antenna terminal SWa of the high-frequency switch functional block 313 is connected to the receiving circuit Rx2 that amplifies the second frequency band in the example of FIG. Therefore, the high-frequency signal input to the antenna terminal SWa is input to the gate terminal of the source-grounded transistor Tr2 in this case via the high-frequency second input signal line 352.

The high-frequency signal input to the gate terminal of the transistor Tr2 is amplified by the transistor Tr2 and output from the drain terminal of the transistor Tr2. The signal amplified by the transistor is input from a drain terminal of the transistor to a balanced output type SAW filter SAW2 through a capacitor that blocks a DC current.

The high-frequency signal input to the SAW filter SAW2 is filtered with a predetermined bandwidth and is output to the second balanced output terminals RFout21 and RFout22.

Note that the terminals GND21 and GND22 are common ground terminals of the receiving circuit Rx2 when performing balanced output. Further, a DC bias of the gate is applied to the gate electrode of the transistor Tr2 via the second gate bias line 322. Similarly, a DC bias of the drain is applied to the drain electrode of the transistor Tr2 via the drain bias line 320. The DC bias applied to these gate electrode and drain electrode is controlled by the microcomputer block 314.

Switching of connection between the antenna ANT and the receiving circuits Rx1 to Rx3 corresponding to each band is controlled by the microcomputer block 314 via the antenna control signal line 341.

In the above description, the operation of the semiconductor device 300 when operating the second-frequency receiving circuit Rx2 has been described. However, the operation when operating the first-frequency receiving circuit Rx3 and the third-frequency receiving circuit Rx3 is also performed. Is almost the same.

Specifically, when operating the first-frequency receiving circuit Rx1, the switch of the high-frequency switch function block 313 is switched to be connected to the high-frequency first input signal line 351, and a high-frequency signal is input to the gate of the transistor Tr1. . Also in this case, the bias point of the transistor Tr1 is set by the first gate bias line 321 and the drain bias line 320, and an amplification operation is performed. In this case, the signal filtered by the SAW filter SAW2 is output from the first balanced output terminals RFout11 and RFout12. The terminals GND11 and GND12 are common ground terminals of the receiving circuit Rx1 when performing balanced output. Similarly, when operating the third-frequency receiving circuit Rx3, the switch of the high-frequency switch function block 313 is switched so as to be connected to the high-frequency third input signal line 353, and a high-frequency signal is input to the gate of the transistor Tr3. Also in this case, the bias point of the transistor Tr3 is set by the third gate bias line 323 and the drain bias line 320, and an amplification operation is performed. In this case, the signal filtered by the SAW filter SAW3 is output from the third balanced output terminals RFout31 and RFout32. The terminals GND31 and GND32 are common ground terminals of the receiving circuit Rx3 when performing balanced output.

These controls are performed by data from a high-performance microcomputer called a digital baseband that controls the entire device on which the semiconductor device 300 that is sent to the first data terminal D1, the second data terminal D2, and the third data terminal D3 is mounted. And is done by command.

As described above, the semiconductor device 300 according to the present embodiment has three semiconductor devices 100 according to the first embodiment, and is formed in an island shape on the insulating film 302a. The high-frequency switch functional block 313 has a silicon island region 311 which is a formed silicon layer, and a high-frequency switch functional block 313 selectively switches between connection and disconnection of the antenna ANT connected to the semiconductor device and the receiving circuits Rx1 to Rx2. It is.

Thereby, the semiconductor device 300 can be realized as one module including the high-frequency switch functional block 313 connected to the antenna ANT.

In addition, the semiconductor device 300 according to the present embodiment has a silicon island region 312 which is a silicon layer formed in an island shape on the insulating film 302b and in which the microcomputer block 314 is formed. The microcomputer block 314 is a microcomputer for controlling the receiving circuits Rx1 to Rx3.

Thus, a control circuit for controlling the receiving circuits Rx1 to Rx3 can be realized. For example, the control circuit includes a circuit that switches the operation mode (for example, the normal mode and the power consumption reduction mode) of the reception circuits Rx1 to Rx3. Further, a circuit for switching the connection of the high-frequency switch function block 313 mounted on the semiconductor device 300 and a circuit for switching a transmission / reception frequency can be given.

In the present embodiment, the high frequency switch functional block 313 and the microcomputer block 314 are formed on a silicon island region structure similar to the transistors Tr1 to Tr3 used in the amplifier circuits Rx1 to Rx3, that is, on the sapphire substrate as the insulating substrate 101. This is a structure in which the silicon island region is located above the insulating

films

302a and 302b. That is, the high-frequency switch functional block 313 and the microcomputer block 314 are circuit blocks formed using a plurality of transistors formed by a semiconductor process in the silicon island region. The difference between the silicon island region 103 of the transistors Tr1 to Tr3 used in the receiving circuits Rx1 to Rx3, the silicon island region 311 of the high frequency switch functional block 313, and the silicon island region 312 of the microcomputer block 314 is only the number of active transistors. The amplifier, the high-frequency switch function block 313, and the microcomputer block 314 are manufactured by the same semiconductor process. As described above, also in this embodiment, after bonding the insulating substrate 101 to the insulating substrate 101 by using a method of bonding a silicon substrate whose surface is oxidized, so-called hydrogen bonding or van der Waals bonding generated by close adhesion. Then, unnecessary silicon material is removed, and the insulating film 102 and the silicon island region 103, the insulating

films

302a and 302b, and the

silicon island regions

311 and 312 of the receiving circuits Rx1 to Rx3 are placed at predetermined positions on the insulating substrate 101. leave.

In this embodiment, three SAW filters are mounted on the sapphire substrate as the insulating substrate 101 instead of the conventional wiring substrate. The SAW filter in this case similarly assumes a balanced output type SAW filter in the third embodiment. Even if a semiconductor device having such a function is realized, according to the present invention, the external dimensions can be made smaller than that of the prior art, and furthermore, no heat dissipation is required. In addition, as described above, there are few variations in characteristics and there are few problems during mass production such as peeling.

(Embodiment 4)
The semiconductor device according to the fourth embodiment is substantially the same as the semiconductor device 300 according to the third embodiment, except that an insulating film is formed on the entire surface of the insulating substrate. Hereinafter, the semiconductor device according to the present embodiment will be described focusing on differences from the semiconductor device 300 according to the third embodiment.

A semiconductor device according to the fourth embodiment will be described with reference to FIG.

FIG. 7 is a plan view showing an example of the configuration of the semiconductor device according to the fourth embodiment.

The semiconductor device 400 according to the fourth embodiment shown in FIG. 7 has an insulation formed on almost the entire main surface side of the insulating substrate 101 as compared with the semiconductor device 300 according to the third embodiment shown in FIG. The silicon island region 103 of the receiving circuits Rx1 to Rx3, the silicon island region 311 in which the high-frequency switch function block 313 is formed, and the silicon island region in which the microcomputer block 314 is formed on the insulating film 402 312 is different.

As a result, the semiconductor device 400 according to this embodiment can extremely increase the adhesion between the insulating substrate 101 and the insulating film 402, so that problems such as peeling of the insulating film 402 do not occur and the semiconductor device 400 is stable during mass production. A simple semiconductor device can be manufactured. In other words, the yield of the manufacturing process is improved. Furthermore, by forming this insulating film thick, it is possible to increase the Q value, which is one measure of the high-frequency performance of the passive components constituting the passive circuit. Therefore, the Q values of the capacitors C1 to C3 of the receiving circuits Rx1 to Rx3 can be increased.

Specifically, after the insulating substrate 101 and a silicon substrate having SiO ₂ on the surface due to oxidation of the surface are bonded together, unnecessary silicon material is removed, and SiO _{2 is applied} to almost the entire surface of the insulating substrate 101. At the same time, the silicon island region 103, the silicon island region 311 and the silicon island region 312 of the receiving circuits Rx1 to Rx3 are left locally. Thus, the SiO ₂ remaining on the entire surface becomes the insulating film 402.

As described in Embodiment Mode 2, by leaving the insulating film 402 over almost the entire surface of the insulating substrate 101, the peeling of the insulating film 202 from the insulating substrate 101 can be reduced, and in addition, a receiving circuit can be provided during the semiconductor process. There is an effect that the peeling phenomenon of the first wiring layer 108 and the second wiring layer 104 of Rx1 to Rx3 is eliminated.

(Embodiment 5)
In the semiconductor device according to the fifth embodiment, as compared with the semiconductor device 100 according to the first embodiment, the electrode is formed on the surface opposite to the surface on which the insulating film of the insulating substrate is formed, and further penetrates the insulating substrate. And a through electrode for connecting the wiring and the electrode.

Next, a semiconductor device according to the fifth embodiment of the present invention will be described with reference to FIG.

FIG. 8 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the fifth embodiment.

Compared with the semiconductor device 100 shown in FIG. 2, the semiconductor device 500 shown in FIG. 2 has the substrate back surface side electrode 513 for mounting the SAW filter SAW, and the insulating

films

102 a and 102 b of the insulating substrate 101 formed thereon. A substrate through electrode 512 that is formed on the surface opposite to the surface and penetrates the insulating substrate 101 and connects the second wiring layer 104 and the substrate back surface side electrode 513 is provided. The substrate back surface side electrode 513 corresponds to the electrode of the present invention, and the substrate through electrode 512 corresponds to the through electrode of the present invention.

Specifically, the component electrode 110 of the SAW filter SAW is electrically connected to the substrate back surface side electrode 513 provided on the opposite main surface side of the sapphire substrate as the insulating substrate 101 through the bonding material 109 and is physically connected. Also fixed to. A substrate through electrode 512 electrically connected to the substrate back surface side electrode 513 and provided at a predetermined position of the insulating substrate 101 is insulated from various circuit elements such as transistors and capacitors on the main surface side of the insulating substrate 101. The component electrodes 110 of the SAW filter SAW on the opposite main surface side of the substrate 101 are electrically connected to each other to form a circuit. A protective resin 501 is provided on the main surface side of the insulating substrate 101 and is connected to the connection bumps 503 through the front side column electrodes 502.

Thereby, the semiconductor device 500 according to the present embodiment can mount the SAW filter SAW on the opposite main surface side of the insulating substrate 101 as compared with the semiconductor device 100 according to the first embodiment. In addition, a further miniaturized semiconductor device can be realized.

(Embodiment 6)
In the first to fifth embodiments, the configuration in which the semiconductor device according to the present invention is realized as a receiving semiconductor device has been described. The semiconductor device according to the present invention is, for example, a transmitting semiconductor device used in a mobile phone. Can also be realized.

Hereinafter, as a sixth embodiment, a case where a semiconductor device according to the present invention is configured as a semiconductor device for transmission will be described with reference to FIGS. 9 and 10. FIG. FIG. 9 is a plan view showing an example of the configuration of the semiconductor device according to the sixth embodiment, and FIG. 10 is a circuit diagram showing an equivalent circuit of the semiconductor device shown in FIG.

As shown in FIG. 9, a semiconductor device 600 includes an insulating substrate 101, insulating films 602a to 602g formed on the insulating substrate, a transistor Tr1 formed in a silicon island region 603a on the insulating film 602a, and an insulating film. Capacitor C1 formed on 602b, transistor Tr2 formed in silicon island region 603c on insulating film 602c, transistor Tr3 formed in silicon island region 603d on insulating film 602d, and formed on insulating film 602e And the isolator 650 formed on the insulating film 602f. Note that the insulating film 602g is provided to insulate the intersecting wirings.

FIG. 10 is an equivalent circuit diagram of the semiconductor device 600 shown in FIG. The electrode pad Pin shown in FIG. 9 is an input terminal, and a biased high-frequency signal Vg1 + RFin is input. The electrode pad P_Vdd1 is a power supply terminal and is supplied with the voltage Vdd1. Similarly, the electrode pad P_Vdd2 is a power supply terminal and is supplied with the voltage Vdd2. The electrode pad P_Vg2 is a bias terminal and is supplied with the bias voltage Vg2 of the transistors Tr2 and Tr3. The electrode pads P_G1 to P_G3 are ground terminals connected to the ground. The electrode pad Pout is an output terminal, and an output signal RFout is output.

As described above, the semiconductor device 600 according to this embodiment includes the insulating substrate 101, the insulating films 602a to 602g formed on the insulating substrate 101, and the island shape on the insulating film 602a. A silicon island region 603a which is a formed silicon layer and an island shape is formed on the insulating film 602c, and an island shape is formed on the silicon island region 603c which is a silicon layer where the transistor Tr2 is formed and an insulating film 602d. , A silicon island region 603d which is a silicon layer in which the transistor Tr3 is formed, a passive circuit region having capacitors C1 and C2 formed outside the

silicon island regions

603a, 603c and 603d, and

silicon island regions

603a, 603c and 603d. Electrode pads P61 to P63 formed outside and outside the passive circuit region; An isolator 650 mounted on the electrode pads P61 to P63, a transistor Tr1 to Tr2, capacitors C1 and C2, and a second wiring layer 104 for connecting the electrode pads P61 to P63, and the transistors Tr1 to Tr2 and the capacitor C1 and C2, the isolator 650, and the second wiring layer 104 constitute, for example, a transmission circuit of a mobile phone.

Thereby, the semiconductor device 600 according to the present embodiment can be extremely miniaturized similarly to the semiconductor device 100 according to the first embodiment. That is, a small semiconductor device having a transmission circuit can be realized.

As described above, the semiconductor device according to the present invention has been described based on each embodiment, but the present invention is not limited to these embodiments. Unless it deviates from the meaning of this invention, what combined each embodiment and what gave this embodiment the various deformation | transformation which those skilled in the art think are also included in the scope of the present invention.

For example, in the above embodiment, the configuration of the capacitor is shown as the passive circuit, but a configuration having an inductor may be used. Specifically, a spiral inductor that is often used in a high-frequency circuit can also be formed by a semiconductor process using the first wiring layer 108 and the second wiring layer 104, and can be miniaturized.

In the above-described embodiment, elements such as transistors, capacitors, and inductors are formed on the silicon island region and the insulating island region in the silicon island region formed on the sapphire substrate, that is, the substrate having a so-called SOS structure. However, other elements may be formed on the substrate having the SOS structure. Moreover, you may combine with not only an electronic element but an optical element. Further, for example, a passive element, an active element or the like manufactured in a separate process in advance may be arranged on the SOS substrate.

In the above-described embodiment, the insulating film is formed of SiO _{2 obtained} by oxidizing silicon. However, the insulating film is not limited to a method of oxidizing silicon, and is separately deposited by a method such as a CVD method as an insulating film. Also good. Further, the insulating film is not limited to SiO ₂ but may be another insulating film.

In the above-described embodiment, the silicon substrate is bonded and bonded to the sapphire substrate by the bonding method, but may be bonded by other methods.

Further, in the semiconductor device described above, the thickness of the insulating film in the other region except for the region immediately below the silicon island region may be formed to be thinner than the thickness immediately below the region. Thereby, the heat generated by the active device formed in the silicon island region can be efficiently released to the insulating substrate, and the heat dissipation efficiency is improved.

Also, in other regions except just under the silicon island region, the insulating film may be completely removed by etching or the like. In addition to the silicon island region, the thickness of the insulating film in other regions except just below the wiring layer may be made thinner than the thickness immediately below the insulating layer.

In addition, the material constituting the first wiring layer, the second wiring layer, and the electrode pad is not limited to the above-described material, and may be any material having conductivity, and may be Al, Cu, Au, for example. .

Further, the shape and size of the silicon island region are not limited to the example shown in the above embodiment, and may be changed in any way.

Various devices including the semiconductor device according to the present invention are also included in the present invention. For example, active elements and passive elements formed on an SOS substrate, high-frequency integrated circuits for transmission and reception including these elements, and high-frequency wireless communication systems including these elements and high-frequency integrated circuits are also included in the present invention.

The semiconductor device of the present invention is useful as a semiconductor device applied to a so-called front-end block for receiving and transmitting communication equipment such as a mobile phone, particularly a front-end block corresponding to multiband and multimode communication.

100, 200, 300, 400, 500, 600, 801 Semiconductor device 101 Insulating substrate 102a to 102c, 202, 302a, 302b, 402, 602a to 602g Insulating film 103, 311, 312, 603a, 603c, 603d Silicon island region 104 Second wiring layer 105 Gate oxide film 107 Interlayer insulating film 108 First wiring layer 109 Bonding material 313 High-frequency switch functional block 314 Microcomputer block 320 Drain bias line 321 First gate bias line 322 Second gate bias line 323 Third gate bias line 341 Antenna control signal line 351 High-frequency first input signal line 352 High-frequency second input signal line 353 High-frequency third input signal line 501 Protective resin 502 Front side column electrode 503 Connection van 512 Substrate through electrode 513 Substrate back side electrode 650 Isolator 802 Wiring substrate 802a Wiring substrate main surface 802b Wiring substrate lower surface 803 Semiconductor chip 803a Semiconductor chip surface 803d Semiconductor chip back surface 804, 804a, 804b Passive component 805 Heat radiation member 805a Side wall portion 805b Ceiling portion 805c Surface of ceiling portion of heat radiation member 805d Joint portion with heat radiation member 806 Marking 807 Joint material 808 Bump electrode 810 Via hole 811 Insulator layer 812a Substrate side electrode 812c Reference potential supply terminal 813a Transistor 813b Control Circuit C, C1, C2, C3 Capacitor D Drain electrode D1 First data terminal D2 Second data terminal D3 Third data terminal G Gate electrode GND11, GND12, GND21, GND22, GND31, GND32 Terminals P1 to P5, P_61 to P_63, P_G1 to P_G3, Pin, Pout, P_Vg2 P_Vdd, P_Vdd1, R_Vdd2, RFin, RFout1 RFout, RFout1 RF2 Output terminal RFout21, RFout22 Second balanced output terminal RFout31, RFout32 Third balanced output terminal Rx1, Rx2, Rx3 Receiver circuit S Source electrode SAW, SAW1, SAW2, SAW3 SAW filter SWa Antenna terminal Tr, Tr1, Tr2, Tr3 Transistor

Claims

An insulating substrate;
An insulating film formed on the insulating substrate;
A first silicon island region which is a silicon layer formed in an island shape on the insulating film and having a first active device formed thereon;
A passive circuit region having a passive circuit formed outside the first silicon island region;
An electrode formed outside the first silicon island region and outside the passive circuit region;
An electronic component mounted on the electrode;
A wiring for connecting the first active device, the passive circuit and the electrode;
The first active device, the passive circuit, the electronic component, and the wiring constitute a predetermined circuit. Semiconductor device.
The semiconductor device according to claim 1, wherein the predetermined circuit is a high-frequency circuit.
3. The semiconductor device according to claim 1, wherein the insulating film below the first silicon island region, the insulating film below the passive circuit, and the insulating film below the electronic component are separated from each other. .
The semiconductor device according to claim 1, wherein the insulating film is formed on the entire surface of the insulating substrate.
The semiconductor device further includes:
A second silicon island region that is a silicon layer formed in an island shape on the insulating film and having a second active device formed thereon;
The semiconductor device according to any one of claims 1 to 4, wherein the second active device is a switch that selectively switches connection and disconnection between an antenna connected to the semiconductor device and the predetermined circuit. .
The semiconductor device further includes:
A third silicon island region that is a silicon layer formed in an island shape on the insulating film and having a third active device formed thereon;
The semiconductor device according to any one of claims 1 to 5, wherein the third active device is a microcomputer for controlling the predetermined circuit.
The first active device is a transistor;
The semiconductor device according to claim 6, wherein the microcomputer includes a bias control circuit that controls a bias voltage of the transistor.
The semiconductor device according to claim 6, wherein the microcomputer has an interface circuit with an external device connected to the semiconductor device.
The electrode is formed on a surface of the insulating substrate opposite to the surface on which the insulating film is formed,
The semiconductor device further includes:
The semiconductor device according to any one of claims 1 to 8, further comprising a through electrode that penetrates through the insulating substrate and connects the wiring and the electrode.
The insulating substrate is a sapphire substrate;
The insulating film is silicon dioxide;
The semiconductor device according to any one of claims 1 to 9, wherein the insulating substrate and the silicon island region are bonded to each other via the insulating film.