JPH0590437A - Composite substrate for heat dissipation - Google Patents
Composite substrate for heat dissipationInfo
- Publication number
- JPH0590437A JPH0590437A JP3273320A JP27332091A JPH0590437A JP H0590437 A JPH0590437 A JP H0590437A JP 3273320 A JP3273320 A JP 3273320A JP 27332091 A JP27332091 A JP 27332091A JP H0590437 A JPH0590437 A JP H0590437A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat
- layer
- heat dissipation
- heat transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 title claims abstract description 18
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000012546 transfer Methods 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、放熱性に優れた放熱用
複合基板に関し、特に、ＩＣ等の高密度実装や高速信号
処理を可能にする放熱用複合基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat-dissipating composite substrate having excellent heat dissipation, and more particularly to a heat-dissipating composite substrate which enables high-density mounting of ICs and the like and high-speed signal processing.
【０００２】[0002]
【従来の技術】近年、導体配線やコンデンサ等を内層化
した低温焼成のガラスセラミックス基板が実用化されつ
つある。このような基板は、従来のガラス−エポキシ基
板に比べて微細配線が可能であり、しかも、多層化が容
易であるため、基板全体を小型化できるというメリット
を有している。2. Description of the Related Art In recent years, low-temperature fired glass ceramic substrates having conductor wiring, capacitors, etc. as inner layers have been put into practical use. Such a substrate allows fine wiring as compared with a conventional glass-epoxy substrate, and moreover has a merit that the whole substrate can be miniaturized because it is easy to form multiple layers.
【０００３】一方、ＩＣ等を高密度に実装したり、ま
た、高速でＩＣに信号処理させたりすると、ＩＣチップ
自身が発熱し、その性能が劣化することが知られてい
る。従って、基板をガラスセラミックス製にすることに
より微細配線を可能にしても、ＩＣの発する熱を逃さな
ければ、高密度実装はできないものである。On the other hand, it is known that when an IC or the like is mounted at a high density or when the IC performs signal processing at a high speed, the IC chip itself generates heat and its performance deteriorates. Therefore, even if fine wiring is made possible by making the substrate of glass ceramics, high-density mounting cannot be achieved without releasing the heat generated by the IC.
【０００４】上記問題点を解決するため、従来、ガラス
セラミックス基板と高熱伝導性の窒化アルミニウム基板
とを接合し、ＩＣの発する熱を速やかに取り去ることが
提案されている。例えば特開昭63−213948号公報には、
ガラスにより接合された窒化アルミニウム基板とガラス
セラミックス基板とからなる複合基板を提案している。
その他にも、銀ロウ等で部品実装面の裏面に窒化アルミ
ニウムや炭化けい素、金属板等の高熱伝導性放熱材料を
接合し、発生した熱を放熱する試みも提案されている。In order to solve the above problems, it has been conventionally proposed that a glass ceramic substrate and an aluminum nitride substrate having high thermal conductivity are bonded to quickly remove the heat generated by the IC. For example, in JP-A-63-213948,
We have proposed a composite substrate consisting of an aluminum nitride substrate and a glass ceramics substrate joined by glass.
In addition, there has been proposed an attempt to radiate the generated heat by joining a high thermal conductive heat radiation material such as aluminum nitride, silicon carbide or a metal plate to the back surface of the component mounting surface with silver solder or the like.
【０００５】しかしながら、もともとガラスセラミック
スの熱伝導率が低いため、裏面に接合された放熱材料に
熱が達しにくく、結果として期待されたほどの放熱効果
の改善が見られなかった。However, since the thermal conductivity of glass ceramics is originally low, it is difficult for heat to reach the heat dissipation material bonded to the back surface, and as a result, the expected improvement in heat dissipation effect has not been observed.
【０００６】そこで、これを改善すべく研究が行なわ
れ、ガラスセラミックス基板の発熱部品実装部分に熱伝
導性の高い物質を置換して熱輸送経路とし、直接この物
質を通して放熱材料まで熱を伝導する、という提案がな
されている。この場合、ガラスセラミックス基板に予め
大きな穴を開けておく必要があり、このため、製造上困
難を極め、コストが高くなってしまう欠点を有してい
る。Therefore, research has been conducted to improve this, and a substance having high thermal conductivity is replaced in the heat-generating component mounting portion of the glass ceramic substrate to form a heat transport path, and heat is directly conducted to the heat dissipation material through this substance. , Has been proposed. In this case, it is necessary to preliminarily make a large hole in the glass ceramics substrate, which is disadvantageous in that the manufacturing is extremely difficult and the cost is high.
【０００７】この欠点を解消するため、更に改善された
提案がなされている。即ち、内部配線を層間で接続する
ためのヴァイアホ−ルをこの熱輸送経路として用いると
いうものである。この方法は、内部回路配線用のヴァイ
アホ−ルを穿孔するとき、同時に伝熱用ヴァイアホ−ル
も穿孔でき、更には、内部回路配線用ヴァイアホ−ルに
導体を充填するとき、同時に伝熱物質としての導体も充
填することができるため、特別な工程を必要とせず、実
際の製造工程を考えると、実に優れた提案であるという
ことができる。In order to eliminate this drawback, further improved proposals have been made. That is, a via hole for connecting internal wiring between layers is used as this heat transport path. In this method, when the via hole for the internal circuit wiring is punched, the via hole for the heat transfer can be punched at the same time, and further, when the conductor is filled in the via hole for the internal circuit wiring, at the same time as the heat transfer substance Since it is possible to fill the conductor of No. 1 as well, no special process is required, and it can be said that this is a really excellent proposal when considering the actual manufacturing process.
【０００８】[0008]
【発明が解決しようとする課題】このように優れた方法
であるけれども、この方法では、単位面積当りに形成で
きる伝熱用ヴァイアホ−ルの断面積は限られており、ま
た、伝熱用ヴァイアホ−ルの設置可能な部分は、発熱部
品の電極等の関係上ほぼ発熱部品の大きさ程度までであ
るため、伝達できる熱の量に限界があり、発熱部品が過
熱してしまうという問題点を有している。Although this is an excellent method, in this method, the cross-sectional area of the heat transfer via-hole that can be formed per unit area is limited, and the heat transfer via-hole is also limited. -Since the area where the heat generating component can be installed is up to about the size of the heat generating component due to the electrodes of the heat generating component, there is a limit to the amount of heat that can be transferred, and the problem that the heat generating component overheats occurs. Have
【０００９】そこで、本発明者等は、上記問題点を解決
すべく検討を重ね、ガラスセラミックスの第２層以後は
発熱部品の電極形状等の制約がないという点に着目し、
この着想を基にして更に研究を重ねた結果、本発明を完
成したものである。即ち、本発明は、上記問題点を解決
する放熱用複合基板を提供することを目的とし、そし
て、ＩＣ等の高密度実装や高速信号処理を可能とする放
熱用複合基板を提供することを目的とする。Therefore, the inventors of the present invention have conducted extensive studies to solve the above-mentioned problems, and paid attention to the fact that there is no restriction on the shape of electrodes of heat-generating components after the second layer of glass ceramics,
As a result of further research based on this idea, the present invention has been completed. That is, an object of the present invention is to provide a heat dissipation composite substrate that solves the above problems, and an object thereof is to provide a heat dissipation composite substrate that enables high-density mounting of ICs and high-speed signal processing. And
【００１０】[0010]
【課題を解決するための手段】そして、本発明は、上記
したとおり、ガラスセラミックスの第２層以後の層が発
熱部品の電極形状等の制約がないという事実に基づい
て、この第２層以後の伝熱用ヴァイアホ−ルの総断面積
を第１層の伝熱用ヴァイアホ−ルの総断面積より多くし
たことを特徴とし、これによって、上記目的を達成した
ものである。即ち、本発明は、発熱部品実装位置に複数
本の伝熱用ヴァイアホ−ルを設けたガラスセラミックス
多層基板と窒化アルミニウム基板とからなる放熱用複合
基板において、ガラスセラミックスの第２層以後の伝熱
用ヴァイアホ−ルの総断面積を第１層の伝熱用ヴァイア
ホ−ルの総断面積より多くし、かつ、各層間を熱導体に
よって接続してなることを特徴とする放熱用複合基板を
要旨とする。As described above, the present invention is based on the fact that the layers after the second layer of glass ceramics are not restricted by the shape of electrodes of heat-generating components and the like. The total cross-sectional area of the heat-transfer via-hole of No. 1 is set to be larger than the total cross-sectional area of the heat-transfer via-hole of the first layer, thereby achieving the above object. That is, according to the present invention, in a heat dissipation composite substrate including a glass ceramic multilayer substrate having a plurality of heat transfer via holes provided at the mounting positions of heat generating components and an aluminum nitride substrate, the heat transfer from the second layer onward of the glass ceramics is performed. The heat dissipation composite substrate is characterized in that the total cross-sectional area of the via vial is larger than the total cross-sectional area of the heat transfer vial of the first layer and each layer is connected by a heat conductor. And
【００１１】以下、本発明を詳細に説明すると、本発明
の構成材料であるガラスセラミックス基板としては、従
来公知のものを使用することができる。これを例示すれ
ば、本発明で特に限定するものではないが、アルミナ、
石英ガラス、ムライト、コ−ディエライト、亜鉛アルミ
ナスピネル等の結晶質粒子と非晶質ガラスマトリックス
とからなる基板であって、通常、1050℃以下の温度にて
焼成された基板であり、必要に応じて内層に銀や銅など
からなる配線が形成され、ヴァイアホ−ルと呼ばれる層
間配線をもったものを使用することができる。（以下、
混乱を避けるため、電気回路配線のためのヴァイアホ−
ルを「内部回路配線用ヴァイアホ−ル」と称し、伝熱の
ためのヴァイアホ−ルを「伝熱用ヴァイアホ−ル」と称
する。）The present invention will be described in detail below. As the glass-ceramic substrate which is a constituent material of the present invention, conventionally known ones can be used. Illustrating this, although not particularly limited in the present invention, alumina,
A substrate comprising crystalline particles such as quartz glass, mullite, cordierite, and zinc alumina spinel, and an amorphous glass matrix, which is usually a substrate fired at a temperature of 1050 ° C. or lower, Accordingly, a wiring made of silver, copper, or the like is formed in the inner layer, and a wiring having an interlayer wiring called a via hole can be used. (Less than,
Vias for electrical circuit wiring to avoid confusion
The heat transfer via hole is referred to as "internal circuit wiring via hole", and the heat transfer via hole is referred to as "heat transfer via hole". )
【００１２】また、本発明の構成材料である放熱用の窒
化アルミニウム基板としては、通常、市販されているも
のを用いることができ、熱伝導率が高いものほど好適に
使用することができる。As the aluminum nitride substrate for heat dissipation, which is a constituent material of the present invention, a commercially available one can be used, and one having a higher thermal conductivity can be preferably used.
【００１３】本発明において、伝熱用ヴァイアホ−ルに
導体を充填する方法としては、周知・慣用手段により、
例えば、各層ごとにパンチングマシ−ンで穿孔した伝熱
用ヴァイアホ−ルに、印刷法により、導体ペ−ストを充
填することができる。そして、上記各層を積層し、プレ
スし、焼成することにより得られたガラスセラミックス
多層基板を使用することができる。In the present invention, as a method for filling the conductor for heat transfer via holes, there are well-known and conventional means.
For example, a conductor paste can be filled by a printing method into a heat transfer via hole in which each layer is punched with a punching machine. Then, a glass-ceramic multilayer substrate obtained by laminating the above layers, pressing and firing can be used.
【００１４】また、上記の伝熱用ヴァイアホ−ルに対す
る導体充填方法として、前記した従来法により、即ち、
回路配線用ヴァイアホ−ルに充填する導体と同一導体を
使用し、そして、内部回路配線用ヴァイアホ−ルに導体
を充填するとき、同時にこの導体を伝熱用ヴァイアホ−
ルにも充填する手段を採用することができる。この手段
は、製造工程上、また、コスト的にみても有利であると
ころから、本発明で限定するものでないが、特に好まし
い。As a conductor filling method for the above heat transfer via hole, the above-mentioned conventional method is used.
When using the same conductor as the conductor to be filled in the circuit wiring via hole, and at the same time as filling the conductor in the internal circuit wiring via hole, this conductor is also used as the heat transfer via hole.
It is also possible to employ a means for filling the same. This means is not limited in the present invention because it is advantageous in terms of manufacturing process and in terms of cost, but is particularly preferable.
【００１５】本発明の特徴とするところは、前記したと
おり、ガラスセラミックス多層基板の第２層以後の伝熱
用ヴァイアホ−ルの総断面積を第１層のその総断面積よ
り多くする点にあり、具体的には、第２層以後の伝熱用
ヴァイアホ−ルの総数（穿孔数）を第１層の伝熱用ヴァ
イアホ−ルの総数（穿孔数）より増加すること（換言す
れば、第２層以後の層に、第１層の伝熱用ヴァイアホ−
ルよりも多くの伝熱用ヴァイアホ−ルを設けること）に
より達成することができる。勿論、伝熱用ヴァイアホ−
ルの径を太くすることによっても達成することができ
る。この点を更に説明すると、前記したとおり、表面層
（第１層）の単位面積当りに設置できるヴァイアホ−ル
の断面積は、限られており、発熱部品の大きさで規制さ
れ、ほぼ定まってしまうけれども、第２層以後は、その
制約がないため、任意に設置でき、任意数又は任意径の
伝熱用ヴァイアホ−ルを穿孔することができる。The feature of the present invention is that the total cross-sectional area of the vial for heat transfer after the second layer of the glass-ceramic multilayer substrate is made larger than that of the first layer as described above. Yes, specifically, to increase the total number of heat transfer via holes (the number of holes) after the second layer from the total number of heat transfer via holes of the first layer (the number of holes) (in other words, The second and subsequent layers are heat transfer vias for the first layer.
More heat transfer via holes). Of course, heat transfer via
It can also be achieved by increasing the diameter of the cable. To further explain this point, as described above, the cross-sectional area of the via hole that can be installed per unit area of the surface layer (first layer) is limited, and is regulated by the size of the heat-generating component and is almost fixed. However, after the second layer, since there is no such limitation, it is possible to arbitrarily install the heat transfer via holes and to bore the heat transfer via holes of any number or diameter.
【００１６】そして、各層に内部回路を形成するための
導体を印刷する際、これと同じ導体を伝熱用ヴァイアホ
−ル上にもそれぞれがつながるように印刷することによ
り作ることができる。この場合、伝熱用ヴァイアホ−ル
間を線で接続するよりも、面状（ベタ）に接続する方
が、面内の熱抵抗がより低下するため、特に好ましい。When a conductor for forming an internal circuit is printed on each layer, the same conductor can be printed on the heat transfer via hole so that they are connected to each other. In this case, it is particularly preferable to connect the heat transfer via-holes with a wire rather than to connect the heat transfer via-holes because the in-plane thermal resistance is further reduced.
【００１７】[0017]
【作用】従来法による場合、第１層から最終層まで同じ
断面積であるため、１層当りの熱抵抗値は同一である。
これに対して、本発明では、第１層の熱抵抗値について
は、従来法によるものと同一であるけれども、第２層以
後は、総断面積を増加したことにより低い熱抵抗値とな
り、そのため、全体として熱抵抗が低減し、発熱部品の
発する熱を放熱用窒化アルミニウム基板まで効率よく伝
達する作用が生ずる。また、各層間が接続しているた
め、各層のヴァイアホ−ルの熱抵抗値が多少バラついて
も、効率よく熱を分配して伝達することができる。In the case of the conventional method, since the first layer to the final layer have the same cross-sectional area, the thermal resistance value per layer is the same.
On the other hand, in the present invention, the thermal resistance value of the first layer is the same as that of the conventional method, but after the second layer, the total thermal resistance is low due to the increase in the total cross-sectional area. As a result, the thermal resistance is reduced as a whole, and the effect of efficiently transmitting the heat generated by the heat-generating component to the aluminum nitride substrate for heat radiation occurs. Further, since the respective layers are connected to each other, even if the thermal resistance value of the via holes of the respective layers varies to some extent, the heat can be efficiently distributed and transferred.
【００１８】[0018]
【実施例】以下、本発明の実施例を図１に基づいて詳細
に説明する。 （実施例）図１は、本発明の実施例を示す放熱用複合基
板の模式図であって、以下に記載するとおり、伝熱用ヴ
ァイアホ−ル３、４を有する第１層〜第６層からなるガ
ラスセラミックス多層基板１と窒化アルミニウム基板２
とよりなる放熱用複合基板である。Embodiments of the present invention will now be described in detail with reference to FIG. (Embodiment) FIG. 1 is a schematic view of a heat dissipation composite substrate showing an embodiment of the present invention. As will be described below, first to sixth layers having heat transfer via holes 3 and 4 are provided. Glass-ceramic multilayer substrate 1 and aluminum nitride substrate 2
Is a composite substrate for heat dissipation.
【００１９】放熱用材料として、2インチ角、厚さ0.625
ｍｍの窒化アルミニウム基板２を用いた。また、ガラス
セラミックス多層基板１として、同じく2インチ角のＲ
Ｃ基板（日本セメント社製）を用いた（全６層で0.6ｍ
ｍ厚）。As a heat dissipation material, 2 inch square, thickness 0.625
The mm2 aluminum nitride substrate 2 was used. Also, as the glass-ceramic multilayer substrate 1, a 2-inch square R is also used.
C substrate (manufactured by Nippon Cement Co., Ltd.) was used (0.6m in all 6 layers)
m thickness).
【００２０】第１層〜第６層からなるガラスセラミック
ス多層基板１は、発熱部品実装位置に予めパンチングマ
シ−ンにて伝熱用ヴァイアホ−ル３、４を穿孔し、銀ペ
−ストをその中に充填した後、積層し、焼成して製造し
た。このうち、発熱部品を実装する第１層の伝熱用ヴァ
イアホ−ル３は、発熱部品（寸法：1.6ｍｍ×3.2ｍｍ、
電極間隔約1.5ｍｍの51オ−ムチップ抵抗）の電極用パ
ッド（図示せず）間に、直径0.25ｍｍの伝熱用ヴァイア
ホ−ル３を0.5ｍｍ間隔で、横に２列、縦に３列の計６
本穿孔した。その他の層（第２〜６層）には、第１層の
伝熱用ヴァイアホ−ル３の設置位置を中心にして、同一
直径及び同一間隔で、横に４列、縦に５列の計２０本の
伝熱用ヴァイアホ−ル４を穿孔した。In the glass-ceramic multilayer substrate 1 including the first to sixth layers, the heat transfer via-holes 3 and 4 are pre-punched at the heat-generating component mounting position with a punching machine, and the silver paste is placed there. After filling the inside, it laminated | stacked and baked and manufactured. Of these, the first layer heat transfer via-hole 3 on which the heat generating component is mounted is a heat generating component (dimensions: 1.6 mm × 3.2 mm,
Between the electrode pads (not shown) of 51 ohm chip resistance with an electrode interval of about 1.5 mm, the heat transfer via holes 3 having a diameter of 0.25 mm are arranged at 0.5 mm intervals in two rows horizontally and three rows vertically. Total of 6
This was perforated. The other layers (2nd to 6th layers) have a total of 4 rows in the horizontal direction and 5 rows in the vertical direction with the same diameter and the same interval with the installation position of the heat transfer via hole 3 of the first layer as the center. Twenty heat transfer via holes 4 were punched.
【００２１】それぞれの伝熱用ヴァイアホ−ル３、４
に、回路配線用ヴァイアホ−ルに用いるものと同じ銀導
体ペ−ストを充填し、更に、各層ごとに伝熱用ヴァイア
ホ−ル３、４の設置部分全体を内部配線用銀導体ペ−ス
トで覆うように印刷した（図示せず）。次に、第１層〜
第６層を積層し、熱圧着した後、焼成してガラスセラミ
ックス多層基板１（ＲＣ基板）とした。Each heat transfer via hole 3, 4
Then, the same silver conductor paste as that used for the circuit wiring via hole is filled, and furthermore, the whole installation portion of the heat transfer via holes 3 and 4 is filled with the silver wiring paste for internal wiring for each layer. Printed to cover (not shown). Next, the first layer
The sixth layer was laminated, thermocompression bonded and then fired to obtain a glass-ceramic multilayer substrate 1 (RC substrate).
【００２２】このガラスセラミックス多層基板１と窒化
アルミニウム基板２とを、二液性耐熱エポキシ樹脂を用
いて接着し、次に、1.6×3.2ｍｍの寸法の51オ−ムチッ
プ抵抗をクリ−ムはんだにて前述したパットにはんだ付
けし、更に、0.5ｍｍφの導線もはんだ付けした（図示
せず）。The glass-ceramic multilayer substrate 1 and the aluminum nitride substrate 2 are bonded together using a two-component heat resistant epoxy resin, and then a 51 ohm chip resistor having a size of 1.6 × 3.2 mm is used as a cream solder. Then, the above-mentioned pad was soldered, and a 0.5 mmφ conductor wire was also soldered (not shown).
【００２３】次に、焦点が2ｍｍφの放射温度計にてチ
ップ抵抗の温度を測定しながら、チップ抵抗に１ワ ッ
ト（0.14アンペア）の直流電流を流し、チップ抵抗の温
度が一定となったときの温度を測定したところ、52.3℃
であった。なお、この測定は、湿度60％、室温20℃にコ
ントロ−ルした室内で行ない、無風状態での数値であ
る。Next, while measuring the temperature of the chip resistance with a radiation thermometer having a focus of 2 mmφ, a direct current of 1 watt (0.14 amperes) was applied to the chip resistance, and the temperature of the chip resistance became constant. When the temperature was measured, it was 52.3 ° C.
Met. This measurement was carried out in a room controlled at a humidity of 60% and a room temperature of 20 ° C., and is a value in a windless state.
【００２４】（比較例）第２層以後の伝熱用ヴァイアホ
−ルの本数を第１層と同じにした以外は、実施例と同様
に製造し、実施例と同一条件でチップ抵抗の温度を測定
したところ、68.9℃であった。(Comparative Example) The same procedure as in Example 1 was repeated except that the number of heat transfer via holes after the second layer was the same as that in the first layer. When measured, it was 68.9 ° C.
【００２５】[0025]
【発明の効果】本発明は、以上詳記したとおり、ガラス
セラミックス多層基板の第２層以後の伝熱用ヴァイアホ
−ルの総断面積を第１層の伝熱用ヴァイアホ−ルの総断
面積より多くした構造の放熱用複合基板であり、その構
造が極めて簡単であって、容易に作製することができ、
しかも、放熱性に優れた基板を得ることができる効果を
有する。そして、本発明により、より高度な、例えばＩ
Ｃ等の高密度実装や高速信号処理をすることができる集
積回路用基板を提供することができる。As described in detail above, according to the present invention, the total cross-sectional area of the heat transfer via-hole after the second layer of the glass-ceramic multilayer substrate is calculated as the total cross-sectional area of the heat transfer via-hole of the first layer. It is a composite board for heat dissipation with more structure, its structure is extremely simple, and it can be easily manufactured.
Moreover, there is an effect that a substrate having excellent heat dissipation can be obtained. And according to the present invention, a higher level, for example I
It is possible to provide an integrated circuit substrate capable of high-density mounting of C or the like and high-speed signal processing.
【図１】本発明の実施例を示す放熱用複合基板の模式図
である。FIG. 1 is a schematic view of a heat dissipation composite substrate showing an embodiment of the present invention.
１ ガラスセラミックス多層基板 ２ 窒化アルミニウム基板 ３ 伝熱用ヴァイアホ−ル ４ 伝熱用ヴァイアホ−ル 1 Glass Ceramics Multilayer Substrate 2 Aluminum Nitride Substrate 3 Heat Transfer Via Hole 4 Heat Transfer Via Hole
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/46 Ｕ 6921−4Ｅ 7352−4Ｍ Ｈ０１Ｌ 23/14 Ｍ ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 5 Identification number Internal reference number for FI Technical indication H05K 3/46 U 6921-4E 7352-4M H01L 23/14 M
Claims (2)
イアホ−ルを設けたガラスセラミックス多層基板と窒化
アルミニウム基板とからなる放熱用複合基板において、
ガラスセラミックスの第２層以後の伝熱用ヴァイアホ−
ルの総断面積を第１層の伝熱用ヴァイアホ−ルの総断面
積より多くし、かつ、各層間を熱導体によって接続して
なることを特徴とする放熱用複合基板。1. A heat dissipation composite substrate comprising a glass-ceramic multilayer substrate having a plurality of heat transfer via holes provided at positions where heat generating components are mounted and an aluminum nitride substrate,
Via-heater for heat transfer after the second layer of glass ceramics
A composite substrate for heat dissipation, characterized in that the total cross-sectional area of each layer is made larger than the total cross-sectional area of the vial for heat transfer of the first layer, and each layer is connected by a heat conductor.
孔数を第１層の穿孔数より多く設けてなる請求項１に記
載の放熱用複合基板。2. The heat dissipation composite substrate according to claim 1, wherein the number of perforations of the heat transfer via holes after the second layer is greater than the number of perforations of the first layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3273320A JP2965223B2 (en) | 1991-09-25 | 1991-09-25 | Composite board for heat dissipation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3273320A JP2965223B2 (en) | 1991-09-25 | 1991-09-25 | Composite board for heat dissipation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0590437A true JPH0590437A (en) | 1993-04-09 |
| JP2965223B2 JP2965223B2 (en) | 1999-10-18 |
Family
ID=17526244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3273320A Expired - Fee Related JP2965223B2 (en) | 1991-09-25 | 1991-09-25 | Composite board for heat dissipation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2965223B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999054935A1 (en) * | 1998-04-16 | 1999-10-28 | Hitachi, Ltd. | Portable communication equipment |
| JP2010272722A (en) * | 2009-05-22 | 2010-12-02 | Bosch Corp | Printed wiring board having heat radiation structure |
| US8803183B2 (en) | 2010-10-13 | 2014-08-12 | Ho Cheng Industrial Co., Ltd. | LED heat-conducting substrate and its thermal module |
-
1991
- 1991-09-25 JP JP3273320A patent/JP2965223B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999054935A1 (en) * | 1998-04-16 | 1999-10-28 | Hitachi, Ltd. | Portable communication equipment |
| JP2010272722A (en) * | 2009-05-22 | 2010-12-02 | Bosch Corp | Printed wiring board having heat radiation structure |
| US8803183B2 (en) | 2010-10-13 | 2014-08-12 | Ho Cheng Industrial Co., Ltd. | LED heat-conducting substrate and its thermal module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2965223B2 (en) | 1999-10-18 |
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