WO1999042995A1 - Support d'information - Google Patents

Support d'information Download PDF

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Publication number
WO1999042995A1
WO1999042995A1 PCT/JP1999/000768 JP9900768W WO9942995A1 WO 1999042995 A1 WO1999042995 A1 WO 1999042995A1 JP 9900768 W JP9900768 W JP 9900768W WO 9942995 A1 WO9942995 A1 WO 9942995A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
nitrogen content
interface
recording medium
information recording
Prior art date
Application number
PCT/JP1999/000768
Other languages
English (en)
Japanese (ja)
Inventor
Reiji Tamura
Hitoshi Watanabe
Yoshihiro Ikari
Motoyasu Terao
Yasushi Miyauchi
Akemi Hirotsune
Original Assignee
Hitachi Maxell, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell, Ltd. filed Critical Hitachi Maxell, Ltd.
Priority to KR1020007009273A priority Critical patent/KR20010024949A/ko
Publication of WO1999042995A1 publication Critical patent/WO1999042995A1/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B33/00—Constructional parts, details or accessories not provided for in the other groups of this subclass
    • G11B33/14—Reducing influence of physical parameters, e.g. temperature change, moisture, dust
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays

Definitions

  • the present invention relates to an information recording medium capable of recording digital information such as video, audio, and computer data using a recording beam such as a laser beam or an electron beam.
  • the formation of the nucleus can be considered to be impeded by this alteration, causing an overwrite failure.
  • the information once written cannot be rewritten, it means that the information in the file management area and defect management area cannot be rewritten, and if left as it is, it may cause a serious accident in the market.
  • an object of the present invention is to solve the above-mentioned problems and to provide an information recording medium having excellent reliability even in a severe environment.
  • the present inventors have conducted various studies in order to achieve the above object, and found that the state of the interface between the recording film and the protective film in an information recording medium having a configuration in which the recording film and the protective film in contact with the recording film were formed. It is extremely important, and it has been found that the above problem can be solved as much as possible by devising the nitrogen content near the interface.
  • the nitrogen content on the recording film side with respect to the above-described interface is larger than that on the protective film side, and the nitrogen content near the interface of the recording film is larger than the nitrogen content inside the recording film.
  • the configuration was adopted.
  • the recording film may be formed of a layer having a high nitrogen content and a layer having a low nitrogen content, or the nitrogen content in the recording film may be continuously reduced from the interface to the inside.
  • the configuration may be any.
  • the nitrogen content on the protective film side with respect to the above-described interface is larger than that on the recording film side, and the protective film mainly includes at least one nitride among the elements constituting the recording film. Was adopted.
  • the nitrogen content on the protective film side across the above-mentioned interface is described.
  • the protective film is composed mainly of sulfide.
  • the recording film is composed of Si, P, V, Mn, Fe, Co, Ni, Cu, Zn, Nb, It preferably contains at least one element of Mo, Ru, Rh, Pd, Ag, Cd, Sn, Ta, 0s, Ir, Pt, Au, Tl, Pb, Bi, and Cr. More preferably, the sulfide is zinc sulfate and the nitrogen content of the protective film is 25 atomic% or less.
  • the content of at least one of Au, Tl, Pb, Bi, and Cr is preferably from 0.1 atom to 10 atom%.
  • FIG. 1 is a sectional view of an information recording medium obtained in Experimental Example 1 of the present invention.
  • FIG. 2 is a sectional view of the information recording medium obtained in Experimental Example 2 of the present invention.
  • FIG. 3 is a cross-sectional view of the information recording medium obtained in Experimental Example 3 of the present invention.
  • the method of making the nitrogen content of the recording film higher than that of the protective film is that the nitrogen content in the recording film can be selected relatively freely, and it is easy to control the nitrogen content gradient across the interface.
  • this method has an advantage, it has a disadvantage that the melting point is increased and the recording sensitivity is lowered at the same time. Therefore, it is preferable to include nitrogen only in the vicinity of the protective film interface of the recording film. This method is easy to control the nitrogen content gradient without lowering the recording sensitivity.
  • the thickness of J5 of the layer having a high nitrogen content is lnm or more and 5 nm or less.
  • the nitrogen content of the protective film is made larger than that of the recording film, if at least one of the main components of the material forming the protective film is a nitride of an element constituting the recording film, the recording film and the Since the same element is contained in the protective film, the formation of crystal nuclei at the interface is easily promoted.
  • the protective film containing nitride as a main component is transparent to the recording / reproducing laser wavelength. The optical requirement that this must be done limits the nitrogen content to some extent, and has the disadvantage that it is difficult to freely select the nitrogen content gradient across the interface.
  • nitrides may have an adverse effect that the thermal conductivity is high and the recording sensitivity is reduced.
  • a nitride When a nitride is used as a protective film, the nitrogen content near the recording film interface and the content at a region away from the interface are changed continuously or discontinuously to make it optically transparent and nitrogen content. A configuration with few restrictions can be achieved. Also, if a sulfide having a lower thermal conductivity than a nitride is used as a protective film material, there is an advantage that a decrease in recording sensitivity is hardly caused. Zinc sulfide is preferred as sulfide, and a mixture of zinc sulfide and silicon dioxide will have lower thermal conductivity. Is more preferable.
  • the diffusion of sulfur in the recording film hardly occurs, or the element that does not deteriorate the optical constant or the crystallization speed even if the diffusion occurs, that is, Si, P, V, Mn, Fe, Co, Ni , Cu, Zn, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Sn-Ta, 0s, Ir, Pt, Au, Tl, Pb, Bi, Cr This is preferable because the number of times increases.
  • These elements combine with the diffused sulfur to form sulfides and form a barrier layer that prevents the diffusion of sulfur, and have the effect of preventing the adverse effects of sulfur diffusion.
  • Co, Pd, Ag, Ta, Pt, Au, Tl and Cr are preferred.
  • the protective film for sulfuric acid it is preferable to use zinc sulfide as the protective film for sulfuric acid and to reduce the nitrogen content to 25 atomic% or less, since diffusion of sulfur hardly occurs.
  • the amount added is preferably 0.1 atom;
  • a known material such as a Ge-Sb-Te system, an In-Sb-Te system, an Ag-In-Sb-Te system, or an In-Se system can be used as a main component.
  • the substrate 1 has a plurality of sputtering chambers and is disposed in a first sputtering chamber in a sputtering apparatus having excellent film thickness uniformity and reproducibility. Evening with a mixture of ZnS and Si0 2 as an rodents bets, the thickness of 90nm in argon gas (ZnS) 80 (Si0 2) Z0 ( mol%) to form a first protective layer 2.
  • ZnS argon gas
  • the thickness was changed in argon gas.
  • a chromium oxide interface film 3 of lOnm was formed.
  • the interface film 3 the effect of such S in the first coercive Mamorumaku consisting ZnS-Si0 2 is prevented from spreading.
  • the target Ag 2. 5 Ge 2.
  • the disc constructed as described above is called A1.
  • A1 By changing the nitrogen content of the argon-nitrogen mixed gas when forming the Ag-Ge-Sb-Te-N film (nitride recording film) 4 on the A1 disc, the interface between the nitride recording film and the protective film is sandwiched. The change in nitrogen content in the atmosphere.
  • Substrate 1 similar to that of Experimental Example 1 was placed in the first sputter chamber in a sputter apparatus having a plurality of sputter chambers and having excellent film thickness uniformity and reproducibility. Evening with a mixture of ZnS and Si0 2 as a target, a thickness of 90nm in argon gas (ZnS) 8Q (Si0 2) 20 ( mol%) to form a first protective layer 2. Next, after transferring this substrate to the second sputtering chamber, a chromium oxide interface film having a thickness of 20 nm was used in an argon gas atmosphere using chromium oxide as a getter. Formed three.
  • the interface film 3 the effect of such S in the first protective film made of ZnS-Si0 2 is prevented from spreading.
  • a third sputter evening chamber evening and one rodent bets and Ag 2. 5 Ge 2D Sb 22 . 5 Te 55 ( atomic%) sintered body, Ag 2. 5 in an argon gas Ge 20 Sb 22. 5 Te 55 ( atomic%) and the recording film 5 to 16nm is formed.
  • the substrate was moved to the fourth sputtering chamber, and a Ta-N sintered body was used as a target, and a Ta-N second protective layer 11 having a thickness of 18 nm was formed in a mixed gas of argon and nitrogen.
  • the nitrogen content of the mixed gas was set to 40 mol%.
  • an AlCr alloy was used as a target in the fifth sputtering chamber to form Al 94 Cr 6 (atomic 5 first reflecting layer 7 having a thickness of 35 nm.
  • an AlTi alloy was used as a target in the sixth sputtering chamber to obtain ⁇ ⁇ ⁇ ⁇ (% by weight)
  • the second reflective layer 8 was formed to have a thickness of 35 nm
  • the laminated substrate was taken out of the sputtering apparatus, and an ultraviolet curable resin protective layer 9 was formed on the uppermost layer by spin coating.
  • the disk constructed as described above is called A2.
  • A2 discs by changing the nitrogen content of the argon-nitrogen mixed gas when forming the Ta-N second protective layer 11, the nitrogen content change across the interface between the nitride recording film and the protective film can be changed. Can be done.
  • Substrate 1 similar to that of Experimental Example 1 was placed in the first sputter chamber in a sputter apparatus having a plurality of sputter chambers and having excellent film thickness uniformity and reproducibility. Evening with a mixture of ZnS and Si0 2 as a target, the 90 dishes thickness in argon gas (ZnS) 8 () (Si0 2) 2 () Zumoru%) to form a first protective layer 2. Next, after moving this substrate to the second sputtering chamber, a chromium oxide interface film 3 having a thickness of 20 nm was formed in argon gas using chromium oxide as a getter. The interface film 3, the effect of such S in the first protective film made of ZnS-Si0 2 is prevented from spreading.
  • first protective layer 2' another sheet of the same substrate 1, chromium oxide surface layer 3 ', Ag 2. 5 Ge 20 Sb 22. 5 Te 55 (atomic%) recording film 5 ', ZnS-Si0 2 - N second protective layer 12', Al 94 Cr 6 (atomic%) the first reflective layer 7 ', Al ⁇ Ti (wt !; second reflection
  • the layer 8 'and the UV-curable resin protective layer 9' were formed, and the two substrates were bonded together with the adhesive layer 10 with the UV-curable resin protective layers 9 and 9 'inside. When the diameter of the adhesive layer was set to 118 or more, peeling of the adhesive layer due to impact such as dropping was less likely to occur.
  • the disc constructed as described above is called A3.
  • A3 nitrogen content in the disc ZnS-Si0 2 -N by Rukoto changing the nitrogen content of the argon one nitrogen mixed gas for forming the second protective layer 11 across the interface between the protective film and the nitride recording film Change can be changed.
  • the Al, A2, A3, and B1 disks fabricated as described above are rotated at a linear velocity of 6 m / s, and a semiconductor laser beam with a wavelength of 660 nm is focused by an NA0.6 objective lens and passed through the substrate. Then, irradiation on the recording film was performed to perform recording and reproduction.
  • a 8-16 modulated random signal was recorded using a waveform in which the laser power was modulated between llmW and 5 mW.
  • a recording mark was formed with a power of llmW, and erasure was performed with a power of 5 mW.
  • a multi-path that divides the recording Loose recording waveforms were used.
  • the average for all disks was 8.5% or less.
  • the jitter was measured by directly overwriting the random signal in the same place where the data was recorded.
  • the Al, A2, and A3 disks had the same jitter of 8.5% or less as before the environment was introduced, but the disk B1 had a jitter of 15% or more, indicating degradation in the overwrite characteristics.
  • the A1 disk had 3 atomic% / nm
  • the A2 disk had 30 atomic% / nm
  • the A3 disk had 7 atom% / nm
  • the B1 disk had 0 atom.
  • the nitrogen content gradient at the interface of the A2 component disk was 0.5 atom3 ⁇ 4 / thigh and 1 atom
  • the nitrogen content near the interface with the recording film was the nitrogen content gradient inside the protective film.
  • the configuration is smaller than the volume.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

L'invention concerne un support d'information présentant des caractéristiques d'enregistrement et de reproduction supérieures et pouvant être utilisé dans des environnements hostiles. Ledit support d'information se compose d'un substrat sur lequel une couche d'enregistrement est placée, ladite couche réagissant à un faisceau d'enregistrement par le changement de séquence des atomes, et une couche de protection d'isolateur en contact avec la couche d'enregistrement. Les côtés opposés de l'interface entre la couche d'enregistrement et la couche de protection ont différentes teneurs en azote. Le taux de changement de teneur en azote à proximité de l'interface varie de 1 pour cent atomique/nm à 50 pour cent atomique/nm dans le sens perpendiculaire à l'interface.
PCT/JP1999/000768 1998-02-23 1999-02-22 Support d'information WO1999042995A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020007009273A KR20010024949A (ko) 1998-02-23 1999-02-22 정보기록매체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/39976 1998-02-23
JP3997698 1998-02-23

Publications (1)

Publication Number Publication Date
WO1999042995A1 true WO1999042995A1 (fr) 1999-08-26

Family

ID=12567990

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1999/000768 WO1999042995A1 (fr) 1998-02-23 1999-02-22 Support d'information

Country Status (2)

Country Link
KR (1) KR20010024949A (fr)
WO (1) WO1999042995A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185732A (ja) * 1992-01-08 1993-07-27 Ricoh Co Ltd 相変化型情報記録媒体
JPH08216522A (ja) * 1995-02-09 1996-08-27 Ricoh Co Ltd 光情報記録媒体及びその製造方法
JPH0930124A (ja) * 1995-05-12 1997-02-04 Ricoh Co Ltd 光情報記録媒体及びその製造方法
JPH09115180A (ja) * 1995-08-10 1997-05-02 Toray Ind Inc 光記録媒体
JPH1016393A (ja) * 1996-07-03 1998-01-20 Matsushita Electric Ind Co Ltd 相変化型光学情報記録媒体及びその製造方法
JPH10275360A (ja) * 1997-03-31 1998-10-13 Matsushita Electric Ind Co Ltd 光学情報記録媒体及びその製造方法
JPH10289478A (ja) * 1997-04-16 1998-10-27 Matsushita Electric Ind Co Ltd 光学式情報記録媒体及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185732A (ja) * 1992-01-08 1993-07-27 Ricoh Co Ltd 相変化型情報記録媒体
JPH08216522A (ja) * 1995-02-09 1996-08-27 Ricoh Co Ltd 光情報記録媒体及びその製造方法
JPH0930124A (ja) * 1995-05-12 1997-02-04 Ricoh Co Ltd 光情報記録媒体及びその製造方法
JPH09115180A (ja) * 1995-08-10 1997-05-02 Toray Ind Inc 光記録媒体
JPH1016393A (ja) * 1996-07-03 1998-01-20 Matsushita Electric Ind Co Ltd 相変化型光学情報記録媒体及びその製造方法
JPH10275360A (ja) * 1997-03-31 1998-10-13 Matsushita Electric Ind Co Ltd 光学情報記録媒体及びその製造方法
JPH10289478A (ja) * 1997-04-16 1998-10-27 Matsushita Electric Ind Co Ltd 光学式情報記録媒体及びその製造方法

Also Published As

Publication number Publication date
KR20010024949A (ko) 2001-03-26

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