WO1999030171A1 - Method of producing probe of tunnel scanning microscope and the probe - Google Patents
Method of producing probe of tunnel scanning microscope and the probe Download PDFInfo
- Publication number
- WO1999030171A1 WO1999030171A1 PCT/JP1998/005543 JP9805543W WO9930171A1 WO 1999030171 A1 WO1999030171 A1 WO 1999030171A1 JP 9805543 W JP9805543 W JP 9805543W WO 9930171 A1 WO9930171 A1 WO 9930171A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- probe
- scanning tunneling
- tip
- tunneling microscope
- stm
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/06—Probe tip arrays
Definitions
- the present invention relates to a method for manufacturing a scanning tunneling microscope probe and the probe.
- the probe material is heated from the outside when the STM probe is manufactured, and the tip shape of the probe material is not shaped by evaporation by an electric field.
- the STM probe is manufactured in a field emission microscope (FEM), so that the distance between the STM probe and the substrate is 5 cm, and the applied force is 5 cm. Since it is manufactured by field emission of electrons at a voltage of 10 kV or more, it is necessary to heat the probe material from outside without heating by tunnel current. ⁇ Further, due to the large distance between the substrate, the electric field intensity in 2 X 1 0 5 V / m about the small fry, no evaporation of the probe material by the electric field is.
- FEM field emission microscope
- the present invention is directed to a scanning tunneling microscope probe that can eliminate the above problems, prevent contamination of the probe, and obtain high resolution using the operation function of the STM without making any modifications to the STM device.
- An object of the present invention is to provide a manufacturing method and a probe thereof. Disclosure of the invention
- a probe material and a scanning tunneling microscope sample are opposed to each other in a vacuum chamber of the scanning tunneling microscope, and a distance between the probe material and the scanning tunneling microscope sample is set.
- a first voltage is adjusted to a first distance to apply a predetermined voltage to evaporate atoms at the tip of the probe material, and a tunnel current is applied to heat the probe material.
- Evaporate to a second distance collect the atoms of the probe material by diffusing to the tip of the probe material, finally stop one atom at the tip of the probe material, and apply the applied voltage Is cut and cooled.
- the probe material is tungsten.
- the probe material is Si.
- the first distance is 0.5 to 2 A.
- the predetermined voltage is DC 10 to 20 V.
- the heating temperature by the tunnel current is approximately / to / of the melting temperature of the probe material.
- the second distance is 10 to 20 A.
- FIG. 1 is a schematic view of an apparatus for manufacturing an STM probe according to a first embodiment of the present invention.
- FIG. 2 is a manufacturing process diagram of an STM probe showing a first embodiment of the present invention.
- FIG. 3 is a schematic view of a multi-electrode probe manufacturing apparatus according to a second embodiment of the present invention.
- FIG. 4 is a plan view of a probe material of a method for manufacturing a multi-electrode probe according to a second embodiment of the present invention.
- FIG. 5 is a perspective view of a probe material of a method for manufacturing a multi-electrode probe according to a second embodiment of the present invention.
- FIG. 6 is a manufacturing process diagram of an STM probe showing a second embodiment of the present invention.
- FIG. 7 is an experimental result showing characteristics of an STM probe manufactured using the first example of the present invention.
- FIG. 1 is a schematic view of an apparatus for manufacturing an STM probe according to a first embodiment of the present invention
- FIG. FIG. 3 is a manufacturing process diagram of an STM probe showing a first example of the present invention.
- a description will be given of a production example of the tungsten probe.
- 1 is a tungsten probe material
- 2 is an STM sample side substrate
- 3 is an STM probe holder
- 4 is an STM probe control device
- 5 is a DC power supply
- 6 is a tunnel current.
- the tungsten probe material 1 manufactured by ordinary etching is mounted on the STM probe holder 13 in the vacuum chamber 1 of the STM device. As shown in FIG. 2 (a), the tip of the tungsten probe material 1 has a diameter of 30 to 50 persons, and the STM sample side substrate 2 uses a metal or a sample to be measured. Using the STM probe control device 4, set the distance between the tungsten probe material 1 and the STM sample side substrate 2 to 0.5 to 2 persons, and stop controlling the distance.
- the atoms 7 are evaporated until the distance between the Tandasten probe material 1 and the STM sample-side substrate 2 becomes 10 to 20 persons. This evaporation removes contamination on the surface of the tip of the tungsten probe material 1, and performs atomic-level cleaning.
- an STM tip having one atom 8 at the tip is obtained as shown in FIG. 2 (d).
- atoms are collected by diffusion at the base 1A of the probe material and at the tip of the base 1A of the probe material, and the extra atoms diffused thereafter are collected.
- a viramid-shaped portion 7A composed of atoms of the probe material left after being removed by evaporation, and a leading-edge portion composed of one atom of the probe material formed on the pyramid-shaped portion 7A. 8 A.
- FIG. 3 is a schematic diagram of a multi-electrode probe manufacturing apparatus showing a second embodiment of the present invention
- FIGS. 4 and 5 are diagrams for explaining a multi-electrode probe manufacturing method of the second embodiment of the present invention.
- FIG. 4 is a plan view
- FIG. 5 is a perspective view thereof
- FIG. 6 is a manufacturing process diagram of an STM probe showing a second embodiment of the present invention.
- 11 is a Si substrate
- 12 is a Si post for a probe formed on the Si substrate
- 20 is an insulating layer
- 21 is a normal STM probe (tungsten probe).
- 22 is an STM probe holder
- 23 is an STM probe control device
- 24 is a DC power supply
- 16 is a tunnel current.
- a Si substrate 11 is used as a material of the multi-electrode probe, and the Si substrate 11 is etched to have a diameter of 30 to 5 mm.
- a Si post 12 for the probe of 0 people is made, and each probe Si post 12 is electrically greened in the green layer 20.
- the tungsten probe 21 is used for each probe Si boss 12 by the method shown in the first embodiment.
- a multi-electrode probe made of the Si substrate 11 is manufactured on the Si post 12.
- the atoms 17 are evaporated until the distance between the tip of the probe Si bost 12 and the tungsten probe 21 becomes 10 to 20 persons. This evaporation removes contamination on the surface of the tip of the probe Si boss 12 and performs atomic-level cleaning.
- an STM probe having one atom 18 at the tip is obtained as shown in FIG. 6 (d).
- the STM probe obtained in this manner has the base material 12A of the probe material and the atoms collected at the tip of the base material 12A of the probe material by diffusion, and then the extra material that has diffused.
- the tungsten probe 21 is moved by the operation of the STM probe control device 23 to sequentially produce the STM probe of the Si post 12 for the probe.
- the material for the STM probe is not limited to tungsten and Si, but may be polycrystal. However, since the single crystal has a unique atomic arrangement, a single crystal is used. It is possible to stably form the tip of an atomic probe.
- the probe material is mainly heated by the tunnel current, and the probe is required to be more quickly evaporated and diffused by the probe. It is also effective to supplementally heat the material using a heating means other than the tunnel current.
- a tungsten probe for STM was manufactured using the first embodiment of the present invention, and it was confirmed using an STM device that there was indeed one atom at the tip of the STM probe. The experimental results are shown.
- the horizontal axis shows the applied voltage of the STM tip, and the vertical axis shows the differential conductance obtained from the tunnel current.
- the trace (a) above shows the characteristic when only one atom exists at the tip of the STM probe, and shows the characteristic that the differential conductance increases discretely with the applied voltage. This is a phenomenon that occurs when a tunnel current flows through one atom at the tip because the electron tunneling is limited by the Coulomb opening effect.
- the lower trace (b) shows the characteristics when one atom at the tip of the same tip is mechanically removed, and tunneling of electrons to many atoms (three in this case) at the tip. As a result, the Coulomb mouth effect is lost and does not show discrete characteristics.
- a probe material of tungsten or silicon is used.
- other probe materials such as gold and platinum can be used to produce a probe in the same manner.
- the present invention is not limited to the above embodiments, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
- Industrial applicability As described above, according to the present invention, the following effects can be obtained.
- An STM probe can be manufactured by using the functions of the STM without making any modifications to the STM device.
- an STM probe By adjusting the probe interval and passing a tunnel current, an STM probe can be manufactured at a low applied voltage.
- the tip of the STM tip is heated only by the tunnel current, if the applied voltage is turned off, the tip is rapidly cooled and the tip shape is preserved.
- the STM tip can be manufactured by heating the tip material by a tunnel current without externally heating the tip material when manufacturing the STM tip.
- the tip of the STM tip can be a single atom, and the highest resolution can be obtained using this tip.
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98957221A EP0990910A4 (en) | 1997-12-09 | 1998-12-08 | PROCESS FOR PRODUCING PROBE FOR TUNNEL EFFECT SCANNING MICROSCOPE AND PROBE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33889497A JP3354463B2 (ja) | 1997-12-09 | 1997-12-09 | 走査トンネル顕微鏡探針の作製方法 |
JP9/338894 | 1997-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999030171A1 true WO1999030171A1 (en) | 1999-06-17 |
Family
ID=18322362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/005543 WO1999030171A1 (en) | 1997-12-09 | 1998-12-08 | Method of producing probe of tunnel scanning microscope and the probe |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0990910A4 (ja) |
JP (1) | JP3354463B2 (ja) |
WO (1) | WO1999030171A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19957824A1 (de) * | 1999-11-19 | 2001-05-31 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung von feinsten Spitzen im Subnanometerbereich |
JP2008519423A (ja) * | 2004-11-08 | 2008-06-05 | バイオメド・ソリューションズ・エルエルシー | 一体化されたサブナノメートルスケール電子ビームシステム |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7507320B2 (en) | 2004-10-09 | 2009-03-24 | Academia Sinica | Single-atom tip and preparation method thereof |
WO2007077842A1 (ja) * | 2005-12-28 | 2007-07-12 | Japan Science And Technology Agency | ナノプローブおよびその製造方法 |
CN104880579B (zh) * | 2015-06-02 | 2019-02-12 | 苏州明志金科仪器有限公司 | 超高真空自旋极化扫描隧道显微镜探针的制备方法和装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63265101A (ja) * | 1987-04-23 | 1988-11-01 | Jeol Ltd | 走査トンネル顕微鏡 |
JPS63265102A (ja) * | 1987-04-23 | 1988-11-01 | Jeol Ltd | 走査トンネル顕微鏡 |
JPH08278315A (ja) * | 1995-04-04 | 1996-10-22 | Mitsubishi Electric Corp | 走査プローブ顕微鏡の使用方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204581A (en) * | 1990-07-12 | 1993-04-20 | Bell Communications Research, Inc. | Device including a tapered microminiature silicon structure |
-
1997
- 1997-12-09 JP JP33889497A patent/JP3354463B2/ja not_active Expired - Fee Related
-
1998
- 1998-12-08 EP EP98957221A patent/EP0990910A4/en not_active Withdrawn
- 1998-12-08 WO PCT/JP1998/005543 patent/WO1999030171A1/ja not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63265101A (ja) * | 1987-04-23 | 1988-11-01 | Jeol Ltd | 走査トンネル顕微鏡 |
JPS63265102A (ja) * | 1987-04-23 | 1988-11-01 | Jeol Ltd | 走査トンネル顕微鏡 |
JPH08278315A (ja) * | 1995-04-04 | 1996-10-22 | Mitsubishi Electric Corp | 走査プローブ顕微鏡の使用方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP0990910A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19957824A1 (de) * | 1999-11-19 | 2001-05-31 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung von feinsten Spitzen im Subnanometerbereich |
DE19957824C2 (de) * | 1999-11-19 | 2002-04-18 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung von feinsten Spitzen im Subnanometerbereich |
JP2008519423A (ja) * | 2004-11-08 | 2008-06-05 | バイオメド・ソリューションズ・エルエルシー | 一体化されたサブナノメートルスケール電子ビームシステム |
Also Published As
Publication number | Publication date |
---|---|
EP0990910A1 (en) | 2000-04-05 |
JP2000346781A (ja) | 2000-12-15 |
JP3354463B2 (ja) | 2002-12-09 |
EP0990910A4 (en) | 2002-09-18 |
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