WO1998034287A9 - Elements inductifs integres sans trous d'interconnexions pour des applications electromagnetiques - Google Patents
Elements inductifs integres sans trous d'interconnexions pour des applications electromagnetiquesInfo
- Publication number
- WO1998034287A9 WO1998034287A9 PCT/US1998/001879 US9801879W WO9834287A9 WO 1998034287 A9 WO1998034287 A9 WO 1998034287A9 US 9801879 W US9801879 W US 9801879W WO 9834287 A9 WO9834287 A9 WO 9834287A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductor elements
- layer
- magnetic core
- spaced conductor
- isolation
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title description 13
- 239000004020 conductor Substances 0.000 claims abstract description 71
- 238000002955 isolation Methods 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005459 micromachining Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 11
- 229920001721 Polyimide Polymers 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000011162 core material Substances 0.000 abstract description 32
- 238000000034 method Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 238000000059 patterning Methods 0.000 abstract description 6
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000001965 increased Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 210000001124 Body Fluids Anatomy 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010839 body fluid Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000003247 decreasing Effects 0.000 description 1
- 230000001809 detectable Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001053 micromoulding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 230000001681 protective Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Definitions
- This invention relates to microelectronics. It is specifically directed to inductive devices which are batch fabricated by the application of micromachining technology.
- Inductors having a maximum linear turns density of approximately 15 turns/mm have been fabricated for high flux applications. Vias have been provided through plasma etching procedures, and conductors have been provided by electroplating. Inductors have also been fabricated by means of thick film technology.
- U.S. Patent 3,614,554 discloses the fabrication of inductor coils with feed through holes (vias) through the use of thin film technology.
- the metallic layers deposited by this means are necessarily of very thin cross section, and thus the current carrying coils are characterized by high resistance, while the magnetic cores are characterized by high reluctance.
- the presence of vias contributes to both conductor resistance per turn and power loss.
- This invention provides a novel inductive element, which may be constructed through batch fabrication techniques.
- a typical fabrication process for realization of the inductor utilizes standard microelectronics materials and equipment.
- the inductor may be fabricated by means of a post process utilizing micromachining technologies, rather than the thin film technologies conventional to integrated circuit fabrication.
- Presently preferred fabrication procedures utilize relatively few, typically four, masks, and are completely compatible with, although distinguishable from, current integrated circuit fabrication technology.
- the manufacturing process used to realize the integrated inductive components of the invention can be implemented to enhance or supplement foundry produced integrated circuits.
- the process requires no high temperature processing steps or specialized equipment or materials.
- the inductor of this invention is generic in character; variations on the manufacturing procedure in accordance with specific design requirements produce a corresponding variety of integrated magnetic components.
- a planar substrate element serves as the structural base for the magnetic component of this invention.
- the substrate element may comprise any of the materials commonly used for that purpose by the microelectronic industry, including without limitation, silicon, gallium arsenide, indium phosphide, and ceramics .
- the substrate element may contain integrated circuit elements of systems with which a component fashioned in accordance with this invention is to be integrated.
- an insulating layer is deposited on the substrate, and is patterned to open contact pads for connection from the magnetic component to any underlying circuitry.
- a first (bottom) conductor is deposited and patterned in accordance with conventional photolithographic techniques.
- the conductor may comprise any or a combination of conductive materials, typically low resistance metals. These metals may be deposited by means of sputtering, electron beam evaporation, filament evaporation, electro-deposition or other suitable techniques.
- an insulating layer typically between about l ⁇ m to about 10 ⁇ m thick
- any magnetic material that can be electroplated is a viable candidate for use in an inductor.
- the core material selected for any specific device depends upon the characteristics of interest (e.g. high permeability, low losses at high frequencies).
- the thickness of the electroplated metal is typically 1 ⁇ m to 50 ⁇ m.
- insulating material usually within the range of about l ⁇ m to about 10 ⁇ m thick
- This procedure is followed by deposition and patterning of a second (top) conductor.
- the same materials are generally, but not necessarily, used for the top insulator and conductor as for the bottom insulator and conductor, respectively.
- the entire structure may be encapsulated for protection from moisture.
- a moisture resistant material is required.
- Bio compatible encapsulation may be required to render the inductors suitable for use in conductive body fluids, for example.
- Polyimide and parylene are examples of suitable encapsulating materials for most applications.
- inductive elements of preferred embodiments provide a low reluctance core.
- inductors of this invention may be incorporated in a variety of practical devices, notably, integrated inductors, integrated transformers, position sensors, telemetry systems and micromotors.
- bar-type inductive elements are fashioned with metallic (ideally an electric grade aluminum alloy) conductors wrapped around a permalloy magnetic core. Connection between the upper and lower conductors of the device requires no vias. Therefore, losses due to series resistance through the wrapped conductor are minimized, and the heat generated by relatively large currents is also minimized.
- the mutual flux produced by the primary (excitation) side should be maximized correspondingly to maximize the magnetization inductance of the transformer. With the magnetization inductance maximized, the behavior of the transformer more closely approximates that of an ideal transformer at high frequencies.
- the device may be embodied as an isolation transformer for use in communication applications.
- an inductor capable of integration into solid state integrated circuits may be fabricated in accordance with this invention by first selecting an appropriate substrate from those otherwise useful in the fabrication of integrated circuits (an "integrated circuit component substrate”.) A first conductive layer is then deposited atop the substrate, the first conductive layer being patterned to provide a first set of spaced conductor elements.
- a first isolation layer is then deposited atop the first conductive layer, the first isolation layer being patterned to expose opposite ends of individual conductors of the first set of spaced conductor elements.
- a magnetic core element may then be deposited atop the first isolation layer within the boundaries of the first set of spaced conductor elements.
- a second isolation layer is deposited atop the magnetic core element, the second isolation layer being patterned to expose the opposite ends of individual conductors of the first set of spaced conductor elements.
- a second conductive layer is then deposited atop the second isolation layer in contact with the opposite ends of the first set of spaced conductors, the second conductive layer being patterned to provide a second set of spaced conductor elements.
- the conductors of the first and second sets of spaced conductor elements are inherently interconnected (as a consequence of patterning) to form primary and secondary coils around the core element.
- a moisture barrier coating may be applied to surround an entire assembly comprising the first conductive layer, the first isolation layer, the core, the second isolation layer and the second conductive layer.
- the magnetic core is most practically fabricated through micromachining technology, including the steps of depositing a metallic seed layer atop the first isolation layer, depositing a layer of photoresist over the seed layer, etching the photoresist to create a mold, the bottom of which is composed of the seed layer, electroplating the core within the mold atop the seed layer, and removing the excess portion of the photoresist layer and the seed layer.
- Excess is meant all of the seed layer not covered by core material, and all of the photoresist layer not previously etched away during patterning.
- the core is electroplated until it overflows the mold, whereby to achieve a shape characterized by an elliptical cross section. This elliptical section can be established as viewed from any or all coordinate axis directions.
- FIGs. 1-4 are schematic illustrations of the steps of a fabrication process of the invention.
- FIG. 5 is a perspective view of an inductive component of the invention
- FIG. 6 is a sectional view taken along the reference line 6—6 of FIG. 5
- FIG. 7 is a perspective view of a magnetic position sensor of the invention
- FIG. 8 is a sectional view taken along the reference line 8—8 of FIG. 7.
- a vialess inductive component, designated generally 26 is fabricated atop a suitable substrate 30.
- a first conductive layer 32 is deposited on the substrate 30. (Although not shown, an isolation layer is often interposed between the substrate 30 and the first conductive layer.)
- a first isolation layer 34 is deposited atop the first conductive layer, leaving end portions 36, 38 exposed.
- a 0.1 ⁇ m thick layer of copper metal is deposited over the first isolation layer 34 to function as an electroplating seed layer 39.
- a 0.5 ⁇ m photoresist layer 40 is deposited over the seed layer and terminal ends (FIG. 2), leaving an open portion (mold) 42 of the photoresist layer 40 to expose the electroplating seed layer 39.
- a low reluctance magnetic core 50 is electroplated atop the isolation layer (FIG. 3). The photoresist 40 and seed 39 layers are then removed.
- the magnetic core 50 material is allowed to "overplate” out of the mold 42.
- This overplating allows for an elliptical cross-section, which is useful for obtaining coverage over the magnetic core 50 in subsequent steps.
- overplating eliminates sharp corners in the magnetic core material.
- a second isolation layer 52 is deposited over the core 50, followed by the deposition of a second conductive layer 54.
- the entire assembly can then be encapsulated with suitable protective material 56.
- the basic inductive device is shown embodied as a transformer.
- the conductive layers 32, 54 are of aluminum and are patterned cooperatively as primary 60 and secondary 62 coils, characterized by high turns density.
- the isolation layers 34, 52 are of polyimide insulation material.
- the performance of a 1 : 1 transformer of similar construction has been characterized. The efficiency of the device tested was approximately 85 % . This efficiency can be increased by reducing the winding resistance of the current carrying coil.
- Such a reduction can be effected by either or both increasing the cross-sectional area of the conductor and decreasing the contact resistance between the upper and lower conductors of the device.
- the device has been operated up to 10 MHz with minimal changes in characteristics due to high frequency losses. This performance is attributable to: 1) the correct choice of magnetic core materials, 2) the large cross sectional area of the core, and 3) the elimination of sharp corners due to the elliptical design of the core.
- the maximum turns density of the devices is 100 turns/mm.
- the resistance of the coils is less than 1.0 ohms per turn at 500 mA of current.
- the inductive component 26 may alternatively be embodied as a magnetic position sensor, as illustrated by FIGs. 7 and 8.
- the structure is similar to that depicted by FIGs. 5 and 6, except that the core 70 is shorter than the tunnel 72 provided by the isolation layers 34, 52. Moreover, the core 70 is reciprocally mounted within the tunnel between blocks 74, 76 of non-magnetic shielding material. Longitudinal movement of the core 70 within the tunnel 72 causes detectable changes in the current and/or voltage detected in the secondary coil 62.
Abstract
La présente invention a trait à un inducteur que l'on peut intégrer dans des circuits et des dispositifs VLSI. Cet inducteur est fabriqué selon un procédé postfonderie de dépôt et de formation de couches de matériau conducteur (32), de matériau isolant (34), de matériau noyau (50), de matériau isolant (52) et de matériau conducteur (54) de façon à produire des bobines conductrices (60, 62) enveloppées autour d'un noyau magnétique, sans qu'il y ait besoin de trous d'interconnexions. Les étapes de fabrication combinent les techniques du microusinage et de la microéléctronique.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53314298A JP2002513511A (ja) | 1997-02-03 | 1998-01-30 | 電磁気応用のためのヴァイアの無い集積誘導性素子 |
CA002279297A CA2279297A1 (fr) | 1997-02-03 | 1998-01-30 | Elements inductifs integres sans trous d'interconnexions pour des applications electromagnetiques |
EP98903872A EP1000442A4 (fr) | 1997-02-03 | 1998-01-30 | Elements inductifs integres sans trous d'interconnexions pour des applications electromagnetiques |
AU60524/98A AU6052498A (en) | 1997-02-03 | 1998-01-30 | Vialess integrated inductive elements for electromagnetic applications |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79433897A | 1997-02-03 | 1997-02-03 | |
US08/794,338 | 1997-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1998034287A1 WO1998034287A1 (fr) | 1998-08-06 |
WO1998034287A9 true WO1998034287A9 (fr) | 1998-12-10 |
Family
ID=25162366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/001879 WO1998034287A1 (fr) | 1997-02-03 | 1998-01-30 | Elements inductifs integres sans trous d'interconnexions pour des applications electromagnetiques |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1000442A4 (fr) |
JP (1) | JP2002513511A (fr) |
KR (1) | KR20000070732A (fr) |
AU (1) | AU6052498A (fr) |
CA (1) | CA2279297A1 (fr) |
TW (1) | TW362287B (fr) |
WO (1) | WO1998034287A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007072375A2 (fr) * | 2005-12-22 | 2007-06-28 | Koninklijke Philips Electronics N.V. | Procede de fabrication d'un composant microelectronique, au moins un enroulement electriquement conducteur etant dispose autour d'un element de noyau en ferrite |
CN108426380A (zh) * | 2018-03-13 | 2018-08-21 | 桑夏太阳能股份有限公司 | 一种新型太阳能光伏光热复合集热器 |
WO2019220862A1 (fr) * | 2018-05-18 | 2019-11-21 | 株式会社村田製作所 | Inducteur et son procédé de production |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3614554A (en) * | 1968-10-24 | 1971-10-19 | Texas Instruments Inc | Miniaturized thin film inductors for use in integrated circuits |
US3881244A (en) * | 1972-06-02 | 1975-05-06 | Texas Instruments Inc | Method of making a solid state inductor |
US3858138A (en) * | 1973-03-05 | 1974-12-31 | Rca Corp | Tuneable thin film inductor |
US4082916A (en) * | 1976-12-16 | 1978-04-04 | Westinghouse Electric Corporation | Encapsulated electrical inductive apparatus |
US4600911A (en) * | 1984-03-20 | 1986-07-15 | Pauwels-Trafo Belgium N.V. | Elliptically shaped magnetic core |
US4848684A (en) * | 1986-11-22 | 1989-07-18 | Kitamura Kiden Co., Ltd. | Wound core having circular and elliptic outer surface portions |
US5070317A (en) * | 1989-01-17 | 1991-12-03 | Bhagat Jayant K | Miniature inductor for integrated circuits and devices |
JPH05166623A (ja) * | 1991-12-12 | 1993-07-02 | Matsushita Electric Ind Co Ltd | 小形固定コイル |
US5279988A (en) * | 1992-03-31 | 1994-01-18 | Irfan Saadat | Process for making microcomponents integrated circuits |
-
1998
- 1998-01-30 WO PCT/US1998/001879 patent/WO1998034287A1/fr not_active Application Discontinuation
- 1998-01-30 JP JP53314298A patent/JP2002513511A/ja active Pending
- 1998-01-30 CA CA002279297A patent/CA2279297A1/fr not_active Abandoned
- 1998-01-30 KR KR1019997006982A patent/KR20000070732A/ko not_active Application Discontinuation
- 1998-01-30 EP EP98903872A patent/EP1000442A4/fr not_active Withdrawn
- 1998-01-30 AU AU60524/98A patent/AU6052498A/en not_active Abandoned
- 1998-02-03 TW TW087101261A patent/TW362287B/zh active
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