WO1997041625A1 - Laser a semi-conducteurs et son procede de fabrication - Google Patents

Laser a semi-conducteurs et son procede de fabrication Download PDF

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Publication number
WO1997041625A1
WO1997041625A1 PCT/JP1997/001426 JP9701426W WO9741625A1 WO 1997041625 A1 WO1997041625 A1 WO 1997041625A1 JP 9701426 W JP9701426 W JP 9701426W WO 9741625 A1 WO9741625 A1 WO 9741625A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor laser
value
layer
stripe
active layer
Prior art date
Application number
PCT/JP1997/001426
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English (en)
Japanese (ja)
Inventor
Isao Kidoguchi
Hideto Adachi
Yasuhito Kumabuchi
Masahiro Kitoh
Masahiro Kume
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO1997041625A1 publication Critical patent/WO1997041625A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis

Definitions

  • the present invention relates to a semiconductor laser used for an optical information processing device such as an optical disk, and more particularly to a semiconductor laser having a high COD level and a high optical output.
  • the current block layer 905 is provided with a stripe-shaped groove (also referred to as a "stripe structure") 905a. Further, the p-type A 1 GaAs buried layer 906 and the p-type GaAs contact layer 90 0 are covered so as to cover the current block layer 905 including the stripe-shaped groove 905 a. 7 is crystal-grown. A p-side electrode 909 is provided on the p-type contact layer 907, and an n-side electrode 908 is provided on the back surface of the n-side GaAs substrate 91.
  • this semiconductor laser 900 a difference in effective refractive index is provided in a direction parallel to the surface of the active layer 903, and the refractive index of the waveguide region is higher than the refractive index outside the waveguide region.
  • the confinement of light inside the waveguide region is enhanced, the differential quantum efficiency is high, and oscillation occurs in a single transverse mode.
  • semiconductor lasers that emit light in the visible light region particularly in the red region in the wavelength range of about 630 nm to about 700 nm, use A] GaInP-based materials.
  • A] Ga I n p type semiconductor laser having an oscillation wavelength in such a visible light region has application as a light source for devices such as an optical disc, recently been ⁇ its importance.
  • a semiconductor laser is used as a light source for a device such as an optical disk, a high light output is generally required.
  • an optical output of about 3 OmW or more is generally required.
  • COD is caused by heat generation near the resonant mirror of a semiconductor laser.
  • COD is likely to be generated if a stable high output is to be obtained.
  • the cavity facet of the semiconductor laser is destroyed, and the desired operation of the semiconductor laser cannot be realized.
  • a semiconductor laser includes: an active layer made of an A 1 GaInP-based material; and a pair of cladding layers provided so as to sandwich the active layer.
  • a stripe structure is further provided to make the carrier injection region for the layer stripe-shaped in the direction of the resonator, and the width of the stripe structure is determined by the value W1 at the emission-side end surface of the resonator and the emission-side end surface. At the end face opposite to W2 satisfies the relationship of Wl and W2, and is set to decrease from the value W2 to the value W1 with respect to the resonator direction, and the value W2 is about 2 ⁇ or more.
  • the active layer is made of an A1GaAs-based material.
  • said value W2 is in the range from about 2 jum to about 5.
  • the semiconductor device further includes a current block layer in which a stripe-shaped groove is formed, and the groove functions as the stripe-shaped structure.
  • said value W1 is about 2 m or less.
  • a semiconductor laser including an active layer, a pair of cladding layers provided so as to sandwich the active layer, and a stripe structure for injecting a carrier into the active layer in a stripe shape.
  • the current blocking layer is made of a dielectric material
  • the width of the stripe structure is opposite to the value W1 at the emission-side end face of the resonator and the width of the emission-side end face.
  • the value W2 at the side end face satisfies the relationship of W1 and W2, and is set so as to decrease from the value W2 to the value W1 with respect to the resonator direction. 2 m or more.
  • said value W2 is in the range from about 2 ⁇ m to about 5.
  • a stripe-shaped groove is formed in the current block layer, and the groove functions as the stripe-shaped structure.
  • the effective refractive index difference in a direction parallel to the surface of the active layer is in a range from about 0.003 to about 0.02.
  • said value W1 is about 2 m or less.
  • the semiconductor laser according to another aspect of the further of the present invention includes a substrate, formed on the substrate,] I n a G a - a N and an active layer comprising a (0 ⁇ a ⁇ 1), the active Upper and lower A 1 b G a b N cladding layers (0 ⁇ b ⁇ 1) formed above and below A current blocking layer having an opening formed on the pad layer, and a third cladding layer formed so as to fill the opening, wherein the refractive index of the current blocking layer is The width of the opening is smaller than the refractive index of the upper cladding layer and smaller than the refractive index of the third cladding layer. Is set so that the value W2 at the opposite end face satisfies the relationship of W1 and W2, and decreases from the value W2 to the value W1 with respect to the resonator direction.
  • the value W2 is about 2 or more.
  • said value W2 is in the range from about 2 m to about 5.
  • the substrate may be a SiC substrate or a sapphire substrate.
  • a light source for condensing laser light emitted from the light source on a recording medium, and a photodetector for detecting laser light reflected by the recording medium
  • the light source is a semiconductor laser having the configuration as described above.
  • the photodetector may be arranged near the semiconductor laser.
  • the method of manufacturing a semiconductor laser according to the present invention includes a step of forming a stacked structure including at least a first clad layer, an active layer, a second clad layer, and a predetermined semiconductor layer on a substrate; Forming the second cladding layer and the predetermined semiconductor layer into a stripe shape, and forming an insulating film on the second cladding layer and the predetermined semiconductor layer processed into the stripe shape. And removing the predetermined semiconductor layer and the insulating film thereon.
  • the width of the stripe shape is such that the value W 1 at the emission-side end face of the resonator and the value W 2 at the end face opposite to the emission-side end face are W 1 ⁇ W2 is satisfied, and the width of the stripe shape is set to decrease from the value W2 to the value W1 with respect to the resonator direction, and the value W2 is set to about 2 ⁇ .
  • a step of processing the second clad layer and the predetermined semiconductor layer may be included.
  • said value W1 is about 2 or less.
  • the width of the stripe shape is such that the value W 1 at the emission-side end face of the resonator and the value W 2 at the end face opposite to the emission-side end face are W 1 ⁇ W 2. And the width of the stripe shape is set to decrease from the value W2 to the value W1 with respect to the resonator direction, and the value W2 is about 2 m or more. Processing the second cladding layer and the first insulating film.
  • said value W2 is in the range from about 2 m to about 5 m.
  • said value W 1 is about 2 ⁇ m or less.
  • the effective refractive index difference in a direction parallel to the surface of the active layer is about 0.0.
  • a method of manufacturing a semiconductor laser comprising: forming a laminated structure including at least a first cladding layer, an active layer, and a second cladding layer on a substrate; Forming a current blocking layer made of a dielectric on the cladding layer, and forming a stripe structure in the current blocking layer for injecting carriers into the active layer in a stripe shape.
  • the width of the stripe structure is such that the value W1 at the emission end face of the resonator and the value W2 at the end face opposite to the emission end face are W1 and W2.
  • the width of the stripe structure is set to decrease from the value W2 to the value W1 with respect to the resonator direction, and the value W2 is about 2 m or more.
  • said value W1 is about 2 ⁇ or less.
  • the dielectric may be A 1 NO or SION.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of an emission-side end face of a resonator in a semiconductor laser according to an embodiment of the present invention.
  • FIG. 2A, FIG. 2B, FIG. 2C, and FIG. FIG. 4 is a top perspective view schematically illustrating various changes in the width of the rip structure.
  • FIG. 3 is a diagram schematically showing a change in a waveguide mode due to a change in the width of a stripe structure in the semiconductor laser of the present invention.
  • FIG. 4 is a diagram showing the relationship between the width of the stripe structure and the threshold current density.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of an emission-side end face of a resonator in a semiconductor laser according to another embodiment of the present invention.
  • 6A to 6C are cross-sectional views of the emission-side end face, schematically showing each step of the method for manufacturing the semiconductor laser of FIG.
  • FIG. 7 is a cross-sectional view schematically illustrating a configuration of an emission-side end face of a resonator in a semiconductor laser according to still another embodiment of the present invention.
  • 8A to 8E are cross-sectional views of an emission-side end face, schematically illustrating steps of a method for manufacturing a semiconductor laser according to still another embodiment of the present invention.
  • FIG. 11 is a diagram schematically showing a configuration of an optical disk device according to the present invention.
  • FIG. 1 is a cross-sectional view schematically showing a structure of a lateral mode control type semiconductor laser 100 according to the first embodiment of the present invention.
  • an n-GaAs buffer layer 102 is used to form A1GaInP.
  • ⁇ -type cloud consisting of Layer 103, multiple quantum well active layer 104 including a well layer composed of GaInP, p-type first cladding layer 105 composed of A1GaInP, etching stop layer composed of p-type Ga1nP 106 are sequentially formed.
  • a current block layer 107 made of n-type A] G a In P is formed, and the current block layer 10 ⁇ has a stripe-shaped opening 107 a (hereinafter referred to as “ Stripe structure 107a ”).
  • a p-type second cladding made of A 1 G a In P is formed on the etching stop layer 106 exposed through the current blocking layer 107 and the striped opening 107 a of the current blocking layer 107.
  • a p-side electrode 111 made of Cr / PtZAu is provided on the cap layer 109, and an n-side electrode 110 made of Au / Ge / Ni is provided on the back surface of the substrate 101. ing.
  • the composition and thickness of each of the above layers are as shown in Table 1 below.
  • the active layer 104 has a multiple quantum well structure including three GaInP well layers and four A1GaInP barrier layers.
  • Table 1 Name Composition thickness cap layer 109 G a A s to about 3 mp type second clad layer 108 (A 1 0. 6 G a 0. D) 0. 5 I n 0. 5 P about 0.9 m current block Layer 1 07 (A 1 0 7 Ga 0 3 ) 0 s I n 0 5 P About 0.
  • P-type first clad layer 105 (A 10 6 G a 0. 4) 0 5 I ⁇ 0., P about 0, 15 // m multi-quantum well active layer 104
  • Well layer Ga 0 5 In . . 5 P about 50A barrier layer (A 1 o. 5 G a 0. S).
  • s I n. . 5 P about 50A n-type clad layer 103 (A] 0. 7 G a 0. 3 ) o. 5 I n 0 S P about lO m
  • FIGS. 2A to 2D show top perspective views of various configurations of the semiconductor laser 100.
  • the individual chips of the semiconductor laser 100 typically have a resonator length of about 700 and a width perpendicular to the resonator length of about 300.
  • the overall size of about 700 mx about 300 is the same in the configurations shown in FIGS. 2B to 2C.
  • the width W2 of the stripe structure 107a at the opposite end face 100b is about 3.0. m.
  • FIG. 3 schematically shows how the waveguide mode changes in the semiconductor laser 100 due to a change in the width of the stripe structure 107a.
  • (I) in FIG. 3 shows a stripe structure near the end face 100b of the semiconductor laser 100; In the region where the width of 07a is wide), and ( ⁇ ) in FIG. 3 is close to the emission end face 100a of the semiconductor laser 100, and the width of the stripe structure 107a is narrow. This is the waveguide mode in region ⁇ .
  • (I) shows a state in which the guided modes are densely packed in the thickness direction of the active layer, but ( ⁇ ) shows a state in which such guided modes are not densely packed.
  • the waveguide mode has a substantially circular shape.
  • an effective refractive index difference ⁇ n-about 0.05 is provided in a direction parallel to the surface of the active layer 104.
  • the light emitted from the semiconductor laser 100 has a wavelength that is hardly absorbed by the current blocking layer 107 due to the difference in band gap. Therefore, in the semiconductor laser 100, the differential quantum efficiency is increased, and high output is realized.
  • the effective refractive index difference in the direction parallel to the surface of the active layer 1 0 4 ⁇ n is about 0. 0 0 3 to about 0. 0 is preferably in the 2 range.
  • the effective refractive index difference ⁇ n refers to a region of the active layer 104 into which a current is injected (specifically, a stripe structure (opening) 107 a of the current blocking layer 107).
  • the stripe structure 107a is tapered in the region of about 100 in length on the side of the emission-side end face 100a, and its width is continuously changed.
  • the width of the stripe structure 107a is constant at about 3 ⁇ .
  • the configuration shown in FIG. 2C has an effect of reducing the scattering loss of the guided light due to the change in the width of the stripe structure 107a.
  • the strip structure 107 a is formed in a region of about 100 m in length on the side of the emission-side end face 100 a as in FIG. 2C. Make it pat The width is continuously changed.
  • the taper shape is curved.
  • the width of the stripe structure 107a is constant at about 3 m.
  • FIG. 1OA is a perspective view schematically showing a configuration of a semiconductor laser 110 disclosed in Appl. Phys. Lett., Vol. 64, pp. 539-541 (1994).
  • the semiconductor laser 10010 is provided with a stripe structure 11013 filled with a p-type doped layer 11012 on the n-type substrate 101.
  • the uniform width of the stripe structure 101 in the region 103 b is about 2.0 m.
  • FIG. 10B is a perspective view schematically showing a configuration of a semiconductor laser 120 disclosed in Electron Lett., Vol. 31, No. 17, pp. 1439/1440 (1995). is there.
  • the semiconductor laser 102 is an InGaAsP-based laser that oscillates at a wavelength of about 1. ⁇ m, and has a stripe structure (strained multiple quantum well active layer). Part of the region 102 is formed to have a tapered shape.
  • the width of the striped structure 1021 is constant outside of the tapered region 1022, but in the tapered region 1022, the stripe structure 1 ⁇ 2 1 Is gradually narrowing from about 1. ⁇ "m to about 0.6 ⁇ .
  • the stripe structure includes a region having a tapered shape.
  • each of these conventional semiconductor lasers 11010 and 10020 is a laser having an oscillation wavelength of about 1 m or more. In such a long-wavelength semiconductor laser, due to the properties of the constituent materials, the effective refractive index difference in a direction (horizontal direction) parallel to the surface of each stacked layer is only about 0.1.
  • the semiconductor lasers 1010 and 10020 as in the present invention, a configuration is formed in which the width W2 at the end face opposite to the emission end facet of the stripe structure is about 2 / m or more. Then, laser oscillation in the basic transverse mode becomes difficult.
  • the purpose of providing a tapered region in the stripe structure with these semiconductor lasers 110 and 102 is to increase the spot size of the laser light and to increase the size of the semiconductor lasers. This is to couple outgoing light to an optical fiber without using a lens. In any case, it is not intended to increase the COD level as in the present invention.
  • the width of the stripe structure at the exit side end face of the resonator is reduced to about 2 m or less, so that light guided in the resonator is more lateral than the stripe structure. It has a configuration that spreads in the direction. As a result, there is no light concentration at the emission-side end face, the COD level is increased, and a highly reliable and high-output semiconductor laser can be obtained.
  • the width of the stripe structure on the end face opposite to the end face on the emission side of the resonator should be approximately
  • the semiconductor laser 1 0 0 in the first embodiment is A 1 G a I n P-based laser
  • the semiconductor laser 2 0 0 in this embodiment A 1 X G a y I n Bok xy N (0x ⁇ l and 0 ⁇ y ⁇ l) laser.
  • the stripe structure has a shape that is narrow on the emission side end face and wide on the opposite side end face as described with reference to FIGS. 2A to 2D. Yes.
  • FIG. 5 is a cross-sectional view schematically illustrating a configuration of the emission-side end face of the semiconductor laser 200.
  • an n-type A] N buffer layer 203 (having a thickness of about 100 ⁇ m) is formed on a ⁇ -type nm), n type A] X G a have X n clad layer 204 (thickness: about 1 m>, ⁇ beauty I n Z G a Z n active layer 205 (thickness: about 50 nm) is formed.
  • the semiconductor laser 300 is different from the semiconductor laser 200 in that the n-side electrode 301 is formed. Specifically, in the semiconductor laser 300, the thickness of the n-type cladding layer 304 is increased to about 2 m, and an opening (striped structure) 307a is formed in the current block layer 307. The semiconductor layered structure corresponding to the region where is not present is removed by etching until the thickness of the n-type cladding layer 304 becomes about 1 // m. An n-side electrode 301 is formed on the surface of the n-type cladding layer 304 exposed by this etching. Note that the P-side electrode 311 is formed on the upper surface of the p-type contact layer 310 as in the case of the semiconductor laser 200.
  • the semiconductor laser 501 is adjusted to operate at a low output of about 5 mW. Further, by driving the semiconductor laser 501 in a self-sustained pulsation mode using, for example, a high frequency superposition method, noise is reduced even in a state where return light from the optical disk 507 exists. In addition, reproduction processing with low distortion can be realized.

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Laser à semi-conducteurs comportant une couche active et une paire de couches de placage qui maintiennent entre elles la couche active. Ce laser possède également une structure en forme de bande, de manière à créer une zone de support et d'injection semblable à une bande, dans la couche active, vers un résonateur. Cette structure en forme de bande est conçue de façon à être égale au rapport W1∫W2 entre la largeur W1 de ladite structure au niveau de la face d'extrémité côté émission du résonateur et la largeur W2 de la structure au niveau de la face d'extrémité opposée du résonateur et, de plus, la largeur de la structure peut être limitée à W1 = W2 dans le sens du résonateur. W2 est supérieure ou égale à 2 νm.
PCT/JP1997/001426 1996-04-26 1997-04-24 Laser a semi-conducteurs et son procede de fabrication WO1997041625A1 (fr)

Applications Claiming Priority (2)

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JP10672996 1996-04-26
JP8/106729 1996-04-26

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086868A (ja) * 2001-09-12 2003-03-20 Toshiba Corp 光ファイバレーザ装置
JP2006114605A (ja) * 2004-10-13 2006-04-27 Sharp Corp 窒化物半導体レーザ素子
JP2006303267A (ja) * 2005-04-22 2006-11-02 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPWO2018003335A1 (ja) * 2016-06-30 2019-04-25 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294585A (ja) * 1988-09-30 1990-04-05 Hitachi Ltd 半導体レーザ素子
JPH02264488A (ja) * 1989-04-05 1990-10-29 Mitsubishi Electric Corp 半導体レーザ装置
JPH05343810A (ja) * 1992-06-09 1993-12-24 Sumitomo Electric Ind Ltd 半導体レーザ
JPH07106703A (ja) * 1993-10-07 1995-04-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294585A (ja) * 1988-09-30 1990-04-05 Hitachi Ltd 半導体レーザ素子
JPH02264488A (ja) * 1989-04-05 1990-10-29 Mitsubishi Electric Corp 半導体レーザ装置
JPH05343810A (ja) * 1992-06-09 1993-12-24 Sumitomo Electric Ind Ltd 半導体レーザ
JPH07106703A (ja) * 1993-10-07 1995-04-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086868A (ja) * 2001-09-12 2003-03-20 Toshiba Corp 光ファイバレーザ装置
JP2006114605A (ja) * 2004-10-13 2006-04-27 Sharp Corp 窒化物半導体レーザ素子
JP2006303267A (ja) * 2005-04-22 2006-11-02 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPWO2018003335A1 (ja) * 2016-06-30 2019-04-25 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム

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