WO1997028561A1 - Reducing fixed charge in semiconductor device layers - Google Patents

Reducing fixed charge in semiconductor device layers Download PDF

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Publication number
WO1997028561A1
WO1997028561A1 PCT/US1996/010196 US9610196W WO9728561A1 WO 1997028561 A1 WO1997028561 A1 WO 1997028561A1 US 9610196 W US9610196 W US 9610196W WO 9728561 A1 WO9728561 A1 WO 9728561A1
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WO
WIPO (PCT)
Prior art keywords
approximately
semiconductor device
chamber
thin film
fixed charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/010196
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English (en)
French (fr)
Inventor
Ravi Iyer
Randhir P. S. Thakur
Howard E. Rhodes
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Micron Technology Inc
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Micron Technology Inc
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Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to AU63322/96A priority Critical patent/AU6332296A/en
Publication of WO1997028561A1 publication Critical patent/WO1997028561A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Definitions

  • the present invention relates to methods and apparatus for manufacturing semiconductor devices, and in particular to reducing the fixed charge in insulative layers on such devices.
  • Field effect transistors are formed on silicon, or similar semiconductor substrates.
  • a field effect transistor is usually formed with active areas such as two heavily doped, spaced apart regions of silicon, which are called a source and a drain.
  • a gate structure is formed between the source and the drain, and operates to control the amount of electrical current which flows between them. When appropriate voltage is applied to the gate, an electrically conductive channel is formed under the gate, allowing current flow between the source and the drain.
  • Active areas of adjacent transistors may be isolated from each other by the formation of a field oxide layer which acts as an insulator. Part of the process of forming transistors involves the application of various layers of material. One such layer is utilized as an insulating layer between the gate and metal interconnects.
  • TEOS Tetraethyloxysilicate
  • BPSG borophosphosilicate glass
  • TEOS triethylborane
  • TEPO triethylphosphate
  • Excess fixed charge has an undesirable effect on adjacent layers.
  • Excessive fixed charge for example can cause the silicon surface to invert under the field oxide, resulting in an undesirable channel for current to flow between two active areas that are isolated by the field oxide.
  • This channel has a charge opposite to that ofthe substrate, which is also depleted of charge carriers in the region surrounding the inversion region.
  • the excessive fixed charge creates or quickens the formation ofthe channel through which current flows, at undesired times.
  • Excessive fixed charge also causes threshold voltage degradation in field transistors, causing premature and excessive leakage, in both n-type and p-type channel devices.
  • the threshold voltage is the minimum voltage that must be applied for a current to flow in the channel between active regions. In semiconductor field transistor devices, it is paramount that the threshold voltage be maintained above a certain level to reduce leakage current between active regions.
  • BPSG Tetraethyloxysilicate
  • O 3 ozone
  • Triethylphosphate (TEPO) and triethylborane (TEB) are organometallics used to dope the film with phosphorous and boron respectively.
  • the BPSG is deposited at pressures of approximately 10 Torr to 760 Torr or atmospheric pressure.
  • the temperature of the BPSG layer is higher than approximately 480 degrees C. This provides a low fixed charge film of BPSG which reflows well at low temperatures. The low fixed charge raises the threshold voltage which in turn helps prevent inducement of undesired channels between unassociated active areas in devices formed in the substrate.
  • Figure 1 is a cross section of a semiconductor device formed in accordance with the present invention.
  • Figure 2 is a graph ofthe concentration of carbon versus depth for depositions performed at multiple temperatures.
  • Figure 3 is a graph ofthe threshold voltage of a device having insulating layer depositions performed at multiple temperatures.
  • a semiconductor device comprising a silicon substrate or other suitable semiconductor material indicated generally at 110 has many active areas such as active areas 112 and 114 of adjacent transistors formed therein separated by a field oxide indicated at 116.
  • the field oxide 1 16 provides isolation between adjacent unassociated active areas of transistors.
  • An insulative glass layer 130 such as an oxide film or borophosphosilicate glass (BPSG) is deposited over the active areas to a depth of approximately 25,000 Angstroms using an organic precursor.
  • Metal conductors represented at 140 are then formed on top of the oxide layer 130.
  • a second oxide layer is then formed as in inter metal dielectric, and further conductors and oxide layers are formed on top of that to form multiple levels of conductors.
  • the glass 130 is formed to a depth of between 2K angstroms and 30K angstroms in a standard chemical vapor deposition
  • CVD tetraethy loxy silicate
  • O 3 ozone
  • TEOS tetraethy loxy silicate
  • O 3 ozone
  • TEOS tetraethy loxy silicate
  • O 3 is formed in a corona discharge tube by flowing O 2 at a rate of approximately 2000-8000 cubic centimeters per minute such that the O 3 concentration in O 2 is approximately 13% by weight. In further embodiments, the concentration ranges from approximate 2-20% by weight.
  • TEOS is then pumped by liquid injectors into a flash evaporator at the rate of approximately 200-800 milligrams per minute and combined with a helium carrier gas which is provided at a rate of between approximately 2000-10,000 cubic centimeters per minute. This mixture is then combined with the oxygen mixture and introduced into the reactor through a common shower head to form the oxide layer on the substrate which is preferably heated to a temperature of at least approximately 480 degrees Celsius.
  • Triethylphosphate (TEPO) and Triethylborane (TEB) are organometallics used to dope the film with phosphorous and boron respectively. They are also controllably injected into the flash evaporator at rates of between 20-90 milligrams per minute and 40-300 milligrams per minute respectively to form varying percentages of doping.
  • TEPO Triethylphosphate
  • TEB Triethylborane
  • the percentage of boron is varied between approximately 0.5-6%, and the percentage of phosphorous is varied between approximately 0.5-8%. Boron doping tends to lower the temperature required for reflow ofthe oxide layer. Phosphorous is used as a mobile ion getterer, and in combination with boron, assists in lowering the reflow temperature. Boron and phosphorous doping may also be obtained through the use of other well known organometallics.
  • the glass layer 130 is deposited at a pressure of approximately 200 Torr. In further embodiments, the pressure varies between approximately 10 Torr to 760 Torr or atmospheric pressure.
  • the temperature at which the deposition ofthe glass layer takes place in one embodiment is approximately 510 degrees C or higher.
  • the heating ofthe substrate is provided in a known manner such as by lamp, resistive coils in the substrate chuck or infrared sources.
  • the substrate 1 10 is then transferred to a furnace for a high temperature reflow in the case of BPSG or densifying in the case of oxide.
  • a batch furnace reflow is performed at approximately 907 degrees C for 30 minutes in a nitrogen (N 2 ) environment at approximately atmospheric pressure.
  • N 2 nitrogen
  • the wafer is reflowed by a rapid thermal process (RTP) reflow at approximately 1000 degrees C for 20 seconds, again in an N 2 environment at approximately atmospheric pressure.
  • RTP rapid thermal process
  • the above steps result in the introduction of carbon into the glass layer from the use ofthe organometallic dopants.
  • the carbon level at the interface between the oxide film and active area silicon interface appears to be directly correlated to the amount of fixed charge in the film.
  • the carbon level in the film appears to be scavenged by the O 3 , leading to a lower fixed charge.
  • Figure 2 is a graph ofthe carbon level concentrations in atoms per cubic centimeter at various depths in Angstroms of each oxide layer deposited using the present invention.
  • Oxide layers were formed at various identified oxide deposition temperatures. The oxide layers were also reflowed for 30 minutes at 907 degrees C. The measurements were taken at various depths using standard secondary ion mass spectroscopy (SIMS).
  • the reflow ofthe layer causes the carbon to migrate toward the interface between the silicon and the oxide layer at about 26,000 Angstrom.
  • the data presented in the graph of actual typical experimental results shows the carbon has migrated to depths near the interface.
  • the total concentration of carbon is seen to be significantly reduced when the film is deposited in the presence of O 3 at temperatures of approximately 480 degrees C and above. When deposited at 510 degrees C, the concentration of carbon is fewer than about 10 18 to IO 17 atoms per cubic centimeter at its highest concentration and the fixed charge density is less than approximately 5x10 10 per square centimeter.
  • FIG. 3 is a graph of threshold voltage for 24,000 angstrom thick BPSG fields applied in an O 3 environment in a deposition chamber at the same temperatures as in Figure 2.
  • RTP rapid thermal process
  • the first three layers in Figure 3 were formed with 3% boron (B 2 O 3 ) and 6% phosphorous (P 2 O 5 ). At 530 degrees C, the percentages of boron and phosphorous were both 5%.
  • An inorganic control group silane (SiH 4 ) is also shown.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PCT/US1996/010196 1996-02-02 1996-06-12 Reducing fixed charge in semiconductor device layers Ceased WO1997028561A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU63322/96A AU6332296A (en) 1996-02-02 1996-06-12 Reducing fixed charge in semiconductor device layers

Applications Claiming Priority (2)

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US59465296A 1996-02-02 1996-02-02
US08/594,652 1996-02-02

Publications (1)

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WO1997028561A1 true WO1997028561A1 (en) 1997-08-07

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US (4) US5933760A (enExample)
AU (1) AU6332296A (enExample)
TW (1) TW318947B (enExample)
WO (1) WO1997028561A1 (enExample)

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US6197705B1 (en) * 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6258611B1 (en) * 1999-10-21 2001-07-10 Vlsi Technology, Inc. Method for determining translation portion of misalignment error in a stepper
US6197677B1 (en) * 1999-11-01 2001-03-06 United Microelectronics Corp. Method of depositing a silicon oxide layer on a semiconductor wafer
US7049786B1 (en) * 2002-11-25 2006-05-23 The Texas A&M University System Unipolar drive topology for permanent magnet brushless DC motors and switched reluctance motors
US7198820B2 (en) * 2003-02-06 2007-04-03 Planar Systems, Inc. Deposition of carbon- and transition metal-containing thin films
US7371695B2 (en) * 2006-01-04 2008-05-13 Promos Technologies Pte. Ltd. Use of TEOS oxides in integrated circuit fabrication processes

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Also Published As

Publication number Publication date
US20020190384A1 (en) 2002-12-19
AU6332296A (en) 1997-08-22
US6864561B2 (en) 2005-03-08
TW318947B (enExample) 1997-11-01
US20040119096A1 (en) 2004-06-24
US6441466B1 (en) 2002-08-27
US6667540B2 (en) 2003-12-23
US5933760A (en) 1999-08-03

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