WO1996025243A1 - Procede de fabrication d'un systeme de couches sur des substrats et systeme de couches realise avec ce procede - Google Patents
Procede de fabrication d'un systeme de couches sur des substrats et systeme de couches realise avec ce procede Download PDFInfo
- Publication number
- WO1996025243A1 WO1996025243A1 PCT/DE1996/000277 DE9600277W WO9625243A1 WO 1996025243 A1 WO1996025243 A1 WO 1996025243A1 DE 9600277 W DE9600277 W DE 9600277W WO 9625243 A1 WO9625243 A1 WO 9625243A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer system
- layer
- metal
- substrate
- adhesive layer
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
Definitions
- the invention relates to a method for producing a layer system consisting of an adhesive layer and an organic coating, in which the adhesive layer is applied by means of barrier discharge and then the substrate coated in this way is then provided with an organic coating, and the layer systems produced using this method .
- Chromate layers are applied to a large extent on metallic workpieces, preferably galvanized steel workpieces, in particular sheet metal and aluminum. These increase the corrosion resistance of the zinc or aluminum and at the same time serve as a primer for a subsequently applied layer of lacquer or adhesive. Iron materials are covered with a phosphating layer for the same reason Mistake. The effect is based on a certain roughening of the surface and a prevention of reactions between the base material and the paint or adhesive.
- the chromating layer is obtained by treatment with an acidic aqueous solution of Cr (IV) (Practical Galvanotechnik, Eugen G. Leuze Verlag, Saulgau 1984). Hexavalent chromium is characterized by high toxicity and environmental damage. Chromatization is one of the main sources of Cr (IV) in the environment, in addition, considerable quantities fall in part. highly diluted liquid waste from treatment and rinsing baths, which is therefore disposed of with great energy expenditure. Therefore, environmentally friendly alternatives to chromium-free passivation processes are being sought.
- Protective layers made of lacquer play a major role in the field of electronic components, particularly in the case of thin-film precision resistors. The problem is similar here: if water vapor penetrates through the protective lacquer layer, the metal-containing resistors are corroded by insufficient electrolyte oxidation and change their resistance value. So far this no adhesive layers are used, which limits the possible uses of these resistors under extreme climatic conditions.
- Siloxane or SiO x layers are also suitable as adhesive layers for lacquers on electronic components.
- SiO x layers have hitherto been produced by hydrolysis of organosilicon compounds and silicic acid esters, that is to say wet-chemically or by flame pyrolysis of organosilicon compounds (silicoater process®).
- the parts to be treated are immersed in highly dilute (approx. 2%) solutions of the silicon-containing starting compound in a solvent. Relative to the layer mass applied, large amounts of solvents are therefore necessary.
- Disadvantages of the silicoater process are the fire hazard inherent in a burner flame, a temperature load of 150 ° C. on the substrates to be coated, and possibly the need for a subsequent wet chemical step to apply a silane coupling agent.
- the object of the present invention is a method for producing a
- an adhesive layer can be applied inexpensively to substrates, in particular metal substrates, the adhesive layer being intended to ensure complete adhesion of a coating over the entire surface.
- the invention is therefore characterized in that the adhesive layer is applied by means of a physical process, namely by means of a plasma process, and the substrate thus coated is subsequently provided with a coating. It is essential in the solution according to the invention that the adhesive layer is produced by means of a barrier discharge becomes. Since the method according to the invention works at or near atmospheric pressure, it is extremely cost-effective.
- a barrier discharge is understood to mean a silent electrical discharge, as it is e.g. in their characteristics in H. Gobrecht, 0. Meinhardt, F. Hein: On the silent electrical discharge in ozonizers, Ber. Bunsenges. 68 (1964), 55.
- the invention therefore expressly includes the disclosure content of this document. It is preferred to work in such a way that a pressure range of 0.1 to 1.5 bar and a voltage range of at least 3 kV is maintained. The selection of the voltage depends on the type and size of the system used. According to the invention, the frequency of the alternating field is in the range from 0.05 to 100 kHz.
- the adhesive layer is produced in such a way that the precursors provided for the adhesive layer to be applied are supplied as gas or as aerosol in a recipient into the gas discharge zone while observing the process conditions described above.
- All compounds known from the prior art in the field of gas phase deposition can be used as precursors. Examples of these are hydrocarbons, silicon-containing compounds, boron or phosphorus-containing compounds or metal compounds. It has been shown that it is particularly advantageous if the method described above is carried out with metal as the substrate.
- the metal can be in a variety of forms.
- the metal can be part of a passive or active electronic component, such as a component of a thin-film precision resistor in flat chip design or a component of a cylindrical thin-film precision resistor.
- the substrate is an iron material or aluminum. It is preferred if it is in the form of a strip material, plates, profiles or profile tubes. According to the invention, it is also possible for the substrate to be moved while the layer is being built up.
- the adhesive layers according to the invention can be provided with organic coating lacquers as well as with an adhesive layer and a connection to a second component that immediately follows. With these adhesive connections one could increased resistance to aging, in the case of paints an increased corrosion resistance is found.
- the invention further relates to a layer system which has been produced by the method described above.
- the layer system is constructed in such a way that the adhesive layer preferably has a thickness of 0.001 to 10 ⁇ m, particularly preferably a thickness of 0.01 to 0.1 ⁇ m.
- Particularly suitable substrates for the layer system according to the invention are sheets made of metal, preferably aluminum, steel and galvanized sheet steel, plates made of steel, galvanized steel or aluminum, profiles, profile tubes, wires made of steel, galvanized steel or aluminum. It is particularly preferred in the layer system if the metal is part of an electronic component, such as a thin-film resistor either in a flat chip or in a cylindrical version.
- FIG. 1 shows the schematic structure in cross section of a device according to the invention for carrying out the method with a fixed substrate
- the exemplary embodiment of the device for carrying out the method according to FIG. 1 consists of a recipient 1, in which the electrode arrangement consisting of electrode rods 3 arranged in pairs is installed.
- Aluminum oxide ceramics are used as the dielectric 2.
- the barrier removal burns in the discharge space 9 between the rod-shaped electrodes 3 on one side and the counter electrode 5, which is simultaneously connected to the substrate 6, on the other side.
- flat chip precision resistors were provided with a 0.1 ⁇ m thin SiO x layer.
- oxygen and TMS were introduced between the electrodes 3 via the gas inlet 7.
- the supplied gases are directed to the substrate 6 by a fan which is connected to the recipient via the connection 8.
- FIG. 2 shows a further embodiment of a device for carrying out the method according to the invention, which is constructed analogously to FIG. 1, but with the difference that here the substrate 10, which at the same time represents the counter electrode, is in the recipient 1 is mobile.
- the substrate 10 which at the same time represents the counter electrode, is in the recipient 1 is mobile.
- this embodiment it is now possible to coat sheets made of metal, preferably aluminum, steel or galvanized steel sheet, as well as profiles, profile tubes or wires.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Paints Or Removers (AREA)
Abstract
La présente invention concerne un procédé de fabrication d'un système de couches sur un substrat. Ce système est constitué par une couche d'accrochage et un revêtement organique, comme des vernis ou des adhésifs, et a) la couche d'accrochage est produite au moyen d'une décharge en barrière sous une pression de 0,1 à 1,5 bar; b) le substrat ainsi recouvert est pourvu du revêtement organique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19505449A DE19505449C2 (de) | 1995-02-17 | 1995-02-17 | Verfahren zur Herstellung eines Schichtsystems auf Substraten und das mit diesem Verfahren hergestellte Schichtsystem |
DE19505449.0 | 1995-02-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996025243A1 true WO1996025243A1 (fr) | 1996-08-22 |
Family
ID=7754288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1996/000277 WO1996025243A1 (fr) | 1995-02-17 | 1996-02-16 | Procede de fabrication d'un systeme de couches sur des substrats et systeme de couches realise avec ce procede |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE19505449C2 (fr) |
WO (1) | WO1996025243A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001034313A3 (fr) * | 1999-11-08 | 2002-01-10 | Fraunhofer Ges Forschung | Couche a fonctionnalisation selective de la surface |
DE102010045035A1 (de) * | 2010-09-10 | 2012-03-15 | Siemens Aktiengesellschaft | Verkapselung und Herstellen einer verkapselten bestückten Leiterplatte |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19807086A1 (de) | 1998-02-20 | 1999-08-26 | Fraunhofer Ges Forschung | Verfahren zum Beschichten von Oberflächen eines Substrates, Vorrichtung zur Durchführung des Verfahrens, Schichtsystem sowie beschichtetes Substrat |
DE19851579B4 (de) * | 1998-11-09 | 2005-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallisierter Kunststoff und Verfahren zu dessen Herstellung |
DE19955880A1 (de) * | 1999-11-20 | 2001-05-23 | Henkel Kgaa | Plasmabeschichtung von Metallen bei Atmosphärendruck |
DE10035177C2 (de) * | 2000-07-19 | 2002-06-20 | Fraunhofer Ges Forschung | Verfahren zur plasmagestützten Behandlung der Innenfläche eines Hohlkörpers und Verwendung desselben |
DE10254427B4 (de) * | 2002-11-21 | 2005-03-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsanlage und Verfahren zur Beschichtung |
SE528890C2 (sv) * | 2005-02-17 | 2007-03-06 | Sandvik Intellectual Property | Metallsubstrat, artikel och förfarande |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58147431A (ja) * | 1982-02-26 | 1983-09-02 | Nippon Sheet Glass Co Ltd | プラズマ重合による保護膜形成方法 |
EP0355621A2 (fr) * | 1988-08-16 | 1990-02-28 | Hoechst Aktiengesellschaft | Feuille comprenant un substrat et un revêtement et son procédé de fabrication |
WO1991012092A1 (fr) * | 1990-02-14 | 1991-08-22 | E.I. Du Pont De Nemours And Company | Procede de revetement de substrat en acier utilisant des techniques au plasma a basse temperature et un appret |
EP0533606A1 (fr) * | 1991-09-18 | 1993-03-24 | Sollac S.A. | Procédé et dispositif de revêtement d'un produit métallurgique par des couches de polymères, et produit obtenu par ce procédé |
DE4242059C1 (de) * | 1992-12-13 | 1994-03-10 | Bayerische Motoren Werke Ag | Verfahren zum thermischen Verbinden von Kunststoff-Formkörpern mit weiteren Kunststoffkomponenten mittels einer durch Plasmapolymerisation aufgetragenen Zwischenschicht |
EP0622474A1 (fr) * | 1993-04-29 | 1994-11-02 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Procédé pour créer un dépôt d'oxyde de silicium sur un substrat solide en défilement |
WO1995010117A1 (fr) * | 1993-10-04 | 1995-04-13 | Catalina Coatings, Inc. | Materiau de revetement a base d'acrylate reticule utile pour former des dielectriques de condensateur et des barrieres a l'oxygene |
DE4404690A1 (de) * | 1994-02-15 | 1995-08-17 | Leybold Ag | Verfahren zur Erzeugung von Sperrschichten für Gase und Dämpfe auf Kunststoff-Substraten |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US3228812A (en) * | 1962-12-04 | 1966-01-11 | Dickson Electronics Corp | Method of forming semiconductors |
DE68922244T2 (de) * | 1988-06-06 | 1995-09-14 | Japan Res Dev Corp | Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck. |
-
1995
- 1995-02-17 DE DE19505449A patent/DE19505449C2/de not_active Expired - Fee Related
-
1996
- 1996-02-16 WO PCT/DE1996/000277 patent/WO1996025243A1/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58147431A (ja) * | 1982-02-26 | 1983-09-02 | Nippon Sheet Glass Co Ltd | プラズマ重合による保護膜形成方法 |
EP0355621A2 (fr) * | 1988-08-16 | 1990-02-28 | Hoechst Aktiengesellschaft | Feuille comprenant un substrat et un revêtement et son procédé de fabrication |
WO1991012092A1 (fr) * | 1990-02-14 | 1991-08-22 | E.I. Du Pont De Nemours And Company | Procede de revetement de substrat en acier utilisant des techniques au plasma a basse temperature et un appret |
EP0533606A1 (fr) * | 1991-09-18 | 1993-03-24 | Sollac S.A. | Procédé et dispositif de revêtement d'un produit métallurgique par des couches de polymères, et produit obtenu par ce procédé |
DE4242059C1 (de) * | 1992-12-13 | 1994-03-10 | Bayerische Motoren Werke Ag | Verfahren zum thermischen Verbinden von Kunststoff-Formkörpern mit weiteren Kunststoffkomponenten mittels einer durch Plasmapolymerisation aufgetragenen Zwischenschicht |
EP0622474A1 (fr) * | 1993-04-29 | 1994-11-02 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Procédé pour créer un dépôt d'oxyde de silicium sur un substrat solide en défilement |
WO1995010117A1 (fr) * | 1993-10-04 | 1995-04-13 | Catalina Coatings, Inc. | Materiau de revetement a base d'acrylate reticule utile pour former des dielectriques de condensateur et des barrieres a l'oxygene |
DE4404690A1 (de) * | 1994-02-15 | 1995-08-17 | Leybold Ag | Verfahren zur Erzeugung von Sperrschichten für Gase und Dämpfe auf Kunststoff-Substraten |
Non-Patent Citations (3)
Title |
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CONNERS K D ET AL: "CORROSION PROTECTION OF COLD-ROLLED STEEL BY PLASMA-POLYMERIZED FILMS OF HEXAMETHYLDISILOXANE", APPLIED POLYMER SYMPOSIA, vol. 54, 1 January 1994 (1994-01-01), pages 167 - 184, XP000468652 * |
H.R. ANDERSON ET AL.: "SILANE ADHESION PROMOTING FILMS", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no. 12, May 1982 (1982-05-01), NEW YORK US, pages 6415, XP002005099 * |
PATENT ABSTRACTS OF JAPAN vol. 007, no. 263 (C - 196) 24 November 1983 (1983-11-24) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001034313A3 (fr) * | 1999-11-08 | 2002-01-10 | Fraunhofer Ges Forschung | Couche a fonctionnalisation selective de la surface |
DE102010045035A1 (de) * | 2010-09-10 | 2012-03-15 | Siemens Aktiengesellschaft | Verkapselung und Herstellen einer verkapselten bestückten Leiterplatte |
CN103098562A (zh) * | 2010-09-10 | 2013-05-08 | 西门子公司 | 封装装配的印刷电路板的封装和制造 |
Also Published As
Publication number | Publication date |
---|---|
DE19505449C2 (de) | 1997-04-30 |
DE19505449A1 (de) | 1996-08-22 |
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