WO1996015287A3 - Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment - Google Patents

Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment Download PDF

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Publication number
WO1996015287A3
WO1996015287A3 PCT/US1995/014231 US9514231W WO9615287A3 WO 1996015287 A3 WO1996015287 A3 WO 1996015287A3 US 9514231 W US9514231 W US 9514231W WO 9615287 A3 WO9615287 A3 WO 9615287A3
Authority
WO
WIPO (PCT)
Prior art keywords
space
heating element
heating
cvd
sealed
Prior art date
Application number
PCT/US1995/014231
Other languages
French (fr)
Other versions
WO1996015287A2 (en
Inventor
Carl White
Jon R Macernie
Joseph T Hillman
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Priority to AU43630/96A priority Critical patent/AU4363096A/en
Priority to EP95942394A priority patent/EP0791082A2/en
Priority to JP51612796A priority patent/JP2001525984A/en
Publication of WO1996015287A2 publication Critical patent/WO1996015287A2/en
Publication of WO1996015287A3 publication Critical patent/WO1996015287A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A CVD apparatus (10) for heating a wafer (106) isolates the heating element (120) from the CVD environment and includes a susceptor body (100) defining a sealed space (140) to contain the heating element (120) and a backplane (102) for supporting and heating the wafer (106). The susceptor space (140) is sealed from the CVD environment and is vacuumed to a first pressure. Heating gas is delivered through a space (190) extending through the susceptor body (100) which is sealed from the susceptor space (140) containing the heating element and is vacuumed to a second pressure preferably less than the CVD reaction pressure to clamp the wafer (106). The heating gas delivery space is formed by an elongated sheath (186) surrounding a hollow wafer lift tube (62). The sheath (186) is sealed at one end to the backplane (102) and at the other end to the tube (62), which moves up and down within the sheath (186). Various seals provide isolation of the heating element space and gas delivery space from each other and from the CVD reaction environment to protect the heating elements from the corrosive effects of CVD vapors.
PCT/US1995/014231 1994-11-09 1995-10-31 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment WO1996015287A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU43630/96A AU4363096A (en) 1994-11-09 1995-10-31 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
EP95942394A EP0791082A2 (en) 1994-11-09 1995-10-31 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
JP51612796A JP2001525984A (en) 1994-11-09 1995-10-31 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/336,496 1994-11-09
US08/336,496 US5562947A (en) 1994-11-09 1994-11-09 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment

Publications (2)

Publication Number Publication Date
WO1996015287A2 WO1996015287A2 (en) 1996-05-23
WO1996015287A3 true WO1996015287A3 (en) 1996-08-08

Family

ID=23316360

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/014231 WO1996015287A2 (en) 1994-11-09 1995-10-31 Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment

Country Status (7)

Country Link
US (2) US5562947A (en)
EP (1) EP0791082A2 (en)
JP (1) JP2001525984A (en)
AU (1) AU4363096A (en)
CA (1) CA2202074A1 (en)
TW (1) TW366514B (en)
WO (1) WO1996015287A2 (en)

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EP0791082A2 (en) 1997-08-27
AU4363096A (en) 1996-06-06
US5562947A (en) 1996-10-08
TW366514B (en) 1999-08-11
CA2202074A1 (en) 1996-05-23
WO1996015287A2 (en) 1996-05-23
JP2001525984A (en) 2001-12-11
US5897380A (en) 1999-04-27

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