WO1995005004A1 - Procede et appareil de lavage de plaquettes - Google Patents

Procede et appareil de lavage de plaquettes Download PDF

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Publication number
WO1995005004A1
WO1995005004A1 PCT/JP1994/001314 JP9401314W WO9505004A1 WO 1995005004 A1 WO1995005004 A1 WO 1995005004A1 JP 9401314 W JP9401314 W JP 9401314W WO 9505004 A1 WO9505004 A1 WO 9505004A1
Authority
WO
WIPO (PCT)
Prior art keywords
hydrogen
wafer
gas
active
cleaning
Prior art date
Application number
PCT/JP1994/001314
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Priority to EP94923094A priority Critical patent/EP0714120A4/fr
Priority to US08/596,245 priority patent/US6003243A/en
Publication of WO1995005004A1 publication Critical patent/WO1995005004A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Definitions

  • the present invention relates to a wafer cleaning apparatus and a cleaning method, and more particularly, to a wafer cleaning apparatus and a cleaning method for terminating a wafer surface after cleaning with hydrogen.
  • wafer cleaning is a very important step to remove impurities such as metals, organic substances, and fine particles that adversely affect semiconductor characteristics.
  • the wafer surface after cleaning and drying is extremely active with many dangling bonds.
  • the present inventors have studied a method for terminating and stabilizing dangling bonds with hydrogen.
  • a hydrogen terminating method there are 1) a method of treating the wafer with ultra-pure water by dilute hydrofluoric acid after the final cleaning step, and 2) a method of treating the wafer with boiling ultra-pure water after the final cleaning. And 3) a method of treating in a hydrogen atmosphere at a high temperature of 600 ° C. or more.
  • Nitrogen blowing and spin drying are used for drying the wafer, but it is difficult to completely remove surface forces and water molecules, and there is a problem that a non-uniform natural oxide film is formed.
  • the present invention provides a wafer, a cleaning apparatus, and a cleaning device capable of completely terminating the wafer surface after the wafer cleaning and preventing contamination of the wafer surface after cleaning and generation of a natural oxide film.
  • the aim is to provide a method. Disclosure of the invention
  • a first gist of the present invention is a wafer cleaning apparatus for performing cleaning and drying of a wafer with a cleaning liquid in a single cleaning tank, wherein the hydrogen activated species for generating a hydrogen activated species from a gas containing hydrogen is provided.
  • Generating means for introducing an active gas containing a hydrogen active species into the cleaning tank, and blowing a dangling bond of the wafer by blowing the active gas containing the hydrogen active species onto the wafer. It is present in a wafer cleaning device characterized by terminating hydrogen.
  • the gas containing hydrogen is preferably a mixed gas of hydrogen and an inert gas, and the inert gas is preferably an argon gas.
  • At least a part of the contact portion with the gas containing hydrogen is preferably made of a material such as Ni which is a catalyst for a hydrogen radical reaction.
  • the material is preferably heated to 300-450 ° C.
  • a second gist of the present invention is a wafer cleaning method for cleaning a wafer with a cleaning liquid and then drying the wafer, wherein a gas containing a hydrogen active species is sprayed on the wafer surface during drying to form a dangling bond on the wafer surface.
  • Ueno which is characterized in that it is terminated with hydrogen, exists in a cleaning method. Action
  • argon gas containing active hydrogen active species is sprayed, thereby allowing hydrogen termination on the wafer surface more easily and at a lower temperature. be able to.
  • Hydrogen active species are very active and have been considered to have a short life in the past.
  • pure argon gas and hydrogen gas and by making active gas introduction means with a material having a catalytic action, the service life can be substantially extended and high-concentration hydrogen active species can be introduced to the surface and surface.
  • the hydrogen terminal Can be performed completely.
  • the cleaning tank of the present invention is provided with a wafer installation member therein, and has a nozzle and a drain port for introducing various chemicals, and various chemicals and ultrapure water are introduced therein.
  • a cleaning device in which a wafer is immersed for cleaning or a cleaning device in which a wafer is mounted on a rotary chuck and a chemical solution or ultrapure water is sprayed while rotating the wafer can be used. After cleaning with chemicals and ultrapure water, a gas containing active hydrogen species is sprayed on the wafers and dried to effectively terminate dangling bonds generated by cleaning with hydrogen. it can.
  • the members constituting the cleaning tank are made of a material having resistance to various chemicals used for cleaning.
  • the hydrogen-active species generating means for example, one in which a part or the whole of the inner surface of the pipe is made of a material serving as a catalyst for a hydrogen radical reaction can be used.
  • a mixed gas of an inert gas and a hydrogen gas By flowing a mixed gas of an inert gas and a hydrogen gas through such a pipe, the hydrogen gas in the mixed gas can be converted into active species such as radicals.
  • the heating temperature is preferably from 300 to 450 ° C, more preferably from 300 to 400 ° C.
  • the amount of active hydrogen species generated is small, and when the temperature exceeds 450 ° C, the amount of active hydrogen species increases, but a passive film is formed on the inner surface of the pipe. If not, impurities may be released from the surface and mixed into the mixed gas.
  • the catalyst used for the generation of active hydrogen species is preferably a material containing Ni, for example, a Ni-based alloy is preferable. Also, among the Ni-based alloys, Ni-Mo based alloys and Ni-W based alloys are preferable. More specifically, for example, Hastelloy (registered trademark) can be mentioned.
  • a passivation film formed by heat treatment in an oxidizing atmosphere having an impurity concentration of 1 O ppb or less is formed on the surface of the stainless steel.
  • a passivation film formed by performing a reduction treatment in a hydrogen atmosphere after the formation of the passivation film is more preferable. Since the surface of such a passivation film contains chromium oxide as a main component, it is possible to prevent impurities from being mixed into the mixed gas.
  • the passivation film contains chromium oxide as a main component, but contains nickel oxide.
  • the nickel oxide acts as a catalyst, and the hydrogen gas in contact with the surface of the passivation film is removed. It is considered to be activated to generate hydrogen active species.
  • the means for generating the hydrogen active species may be, for example, a fiber-like, mesh-like, sponge-like, or tubular catalyst provided in the vessel in addition to the above-mentioned pipe shape. Such a shape is advantageous in that the contact area with the hydrogen gas is increased and the activation efficiency is increased.
  • the impurities in the inert gas and the hydrogen gas used in the present invention are preferably 10 ppb or less, more preferably 1 ppb or less. Further, the mixing ratio of hydrogen gas in the mixed gas is preferably 0.1% or more, and more preferably 1 to 10%. In this range, the amount of active hydrogen species generated will increase. He gas and N are used as the inert gas. Gas, Ar gas, etc. are preferably used, but Ar is particularly preferred.
  • the active gas introduction means of the present invention is for guiding an active gas containing hydrogen active species generated by the hydrogen active species generation means to the cleaning tank, and is generally used, for example, for piping.
  • the inner surface is made of, for example, a material containing Ni or the like.
  • the gas is introduced from above the cleaning tank, and a down flow can uniformly supply the gas to the upper surface of the wafer.
  • FIG. 1 is a conceptual diagram showing an example of the wafer cleaning apparatus of the present invention.
  • FIG. 1 shows a wafer cleaning apparatus used in this embodiment.
  • reference numeral 1 denotes a cleaning tank, which is configured to be divided into a main body 10 and a sealing hood 9.
  • 2 is a plurality of chemical liquid nozzles connected to various chemical liquid supply devices (not shown)
  • 3 is a Si wafer
  • 4 is a wafer chuck
  • 5 is an exhaust / drainage port
  • 6 is an N gas inlet
  • 7 is a rotation.
  • a motor, 8 is a nozzle for cleaning the back surface of the wafer while moving, 11 is an active gas introduction pipe for spraying hydrogen active species onto the wafer, 12 is a hydrogen active species generation means provided with heating means 13, 1 4 is a mixer for Ar gas and H 2 gas, 15 is a mixed gas pipe, 16 and 17 are Ar gas pipes and H 2 gas pipes, respectively.
  • Supply device connected to H 2 gas supply device (not shown).
  • the hydrogen active species generating means 12 was formed by rolling and bundling a 10-meter Ni wire inside a cylindrical stainless steel (SUS316) container whose inner surface was electropolished. Using the inserted one, the heater 13 was heated to 350 ° C. A stainless steel tube (SUS316) with its inner surface electropolished was used as the active gas introduction tube. The mixing ratio of the mixed gas, A r 9 0%, and the H 9 1 0%.
  • N 2 gas is introduced from the N 9 inlet 6, and the wafer 3 is set on the chuck 4 and the sealing hood is closed.
  • ultrapure water ozone-added ultrapure water (removal of organic matter and oxide film formation), hydrofluoric acid + Hydrogen oxide (natural oxide film and metal removal), ammonium hydroxide + hydrogen peroxide (fine particles, organic matter and metal removal), hydrofluoric acid + hydrogen peroxide (natural oxide film and metal removal), ultra-pure water Washing was performed by dropping. Subsequently, the wafer was rotated at 150 rpm and dried while spraying a mixed gas containing a hydrogen active species from the mixed gas introduction pipe onto the wafer.
  • the Si-H bond on the wafer surface cleaned as described above was measured using FT-IR. After the wafer was left in a clean room for 6 hours, the amount of natural oxide film generated was measured. In addition, after immersion in a 1 ppm Cu aqueous solution to show the difficulty of attaching metal impurities on the wafer surface, TRXRF The amount of deposition was measured.
  • the wafer, dangling bonds on the surface due to cleaning, and dangling bonds on the surface are completely terminated to stabilize the wafer surface, and prevent re-contamination and the formation of a natural oxide film when the wafer is transferred. it can.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un lave-plaquette de circuits imprimés, et un procédé de lavage qui permet de parachever le nettoyage des surfaces de plaquettes ainsi lavées avec de l'hydrogène, pour empêcher une contamination et une oxydation spontanée. Un lave-plaquette comporte une seule cuve, pour le lavage liquide et le séchage, un dispositif de production d'hydrogène actif naissant à partir d'un gaz contenant de l'hydrogène, et un dispositif permettant d'introduire ce gaz actif contenant l'hydrogène actif naissant dans la cuve de lavage, ce qui permet de parachever le nettoyage des liaisons pendantes de plaquettes avec l'hydrogène en pulvérisant le gaz actif contenant cet hydrogène actif naissant. On décrit un procédé de séchage de plaquettes qui consiste, après les avoir lavées avec une solution de lavage, à pulvériser leurs surfaces avec un gaz contenant l'hydrogène actif naissant, pendant le séchage, puis à parachever l'opération pour les liaisons pendantes présentes sur ces surfaces, en utilisant de l'hydrogène.
PCT/JP1994/001314 1993-08-09 1994-08-09 Procede et appareil de lavage de plaquettes WO1995005004A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP94923094A EP0714120A4 (fr) 1993-08-09 1994-08-09 Procede et appareil de lavage de plaquettes
US08/596,245 US6003243A (en) 1993-08-09 1994-08-09 Wafer cleaning apparatus and method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5/197442 1993-08-09
JP19744293A JP3436776B2 (ja) 1993-08-09 1993-08-09 ウエハ洗浄装置及び洗浄方法

Publications (1)

Publication Number Publication Date
WO1995005004A1 true WO1995005004A1 (fr) 1995-02-16

Family

ID=16374580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1994/001314 WO1995005004A1 (fr) 1993-08-09 1994-08-09 Procede et appareil de lavage de plaquettes

Country Status (4)

Country Link
US (1) US6003243A (fr)
EP (1) EP0714120A4 (fr)
JP (1) JP3436776B2 (fr)
WO (1) WO1995005004A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394143B2 (ja) * 1996-12-16 2003-04-07 大日本スクリーン製造株式会社 基板洗浄方法及びその装置
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP4135780B2 (ja) * 1997-08-29 2008-08-20 ユーシーティー株式会社 薬液定量注入装置および方法
DE19808408C1 (de) * 1998-02-27 1999-06-24 Bernd Dreisbach Vakuum-Trockenschrank
NL1009171C2 (nl) * 1998-05-14 1999-12-10 Asm Int Waferrek voorzien van een gasverdeelinrichting.
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
JP4554146B2 (ja) 2002-09-24 2010-09-29 忠弘 大見 回転式シリコンウエハ洗浄装置
TW200524018A (en) * 2003-11-20 2005-07-16 Ulvac Inc Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device
JP2005158761A (ja) * 2003-11-20 2005-06-16 Ulvac Japan Ltd 薄膜製造方法、半導体装置の製造方法、及び半導体装置
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
US8030182B2 (en) * 2005-09-20 2011-10-04 Tadahiro Ohmi Semiconductor device manufacturing method and semiconductor manufacturing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04287922A (ja) * 1991-01-22 1992-10-13 Dainippon Screen Mfg Co Ltd 回転式表面処理方法及びその方法を実施するための回転式表面処理装置
JPH05144804A (ja) * 1991-11-22 1993-06-11 Tadahiro Omi 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129732A (ja) * 1989-07-19 1991-06-03 Matsushita Electric Ind Co Ltd 半導体の処理方法
US5227001A (en) * 1990-10-19 1993-07-13 Integrated Process Equipment Corporation Integrated dry-wet semiconductor layer removal apparatus and method
JP3385324B2 (ja) * 1992-10-05 2003-03-10 忠弘 大見 ウエハー乾燥方法及びウエハー乾燥装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04287922A (ja) * 1991-01-22 1992-10-13 Dainippon Screen Mfg Co Ltd 回転式表面処理方法及びその方法を実施するための回転式表面処理装置
JPH05144804A (ja) * 1991-11-22 1993-06-11 Tadahiro Omi 半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0714120A4 *

Also Published As

Publication number Publication date
JPH0758076A (ja) 1995-03-03
EP0714120A4 (fr) 1997-01-22
JP3436776B2 (ja) 2003-08-18
US6003243A (en) 1999-12-21
EP0714120A1 (fr) 1996-05-29

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