WO1994006182A1 - System and method for selectively laser processing a target structure of materials of a multimaterial, multilayer device - Google Patents

System and method for selectively laser processing a target structure of materials of a multimaterial, multilayer device Download PDF

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Publication number
WO1994006182A1
WO1994006182A1 PCT/US1993/008484 US9308484W WO9406182A1 WO 1994006182 A1 WO1994006182 A1 WO 1994006182A1 US 9308484 W US9308484 W US 9308484W WO 9406182 A1 WO9406182 A1 WO 9406182A1
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Prior art keywords
laser
target structure
laser output
wavelength
substrate
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PCT/US1993/008484
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English (en)
French (fr)
Inventor
Yunlong Sun
Craig Dean Hutchens
Original Assignee
Electro Scientific Industries, Inc.
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Application filed by Electro Scientific Industries, Inc. filed Critical Electro Scientific Industries, Inc.
Priority to KR1019950700946A priority Critical patent/KR100231811B1/ko
Priority to GB9500774A priority patent/GB2283859B/en
Publication of WO1994006182A1 publication Critical patent/WO1994006182A1/en
Priority to US08/343,778 priority patent/US5473624A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/14—Titanium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B23K2103/26—Alloys of Nickel and Cobalt and Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0401—Arrangements for thermal management of optical elements being part of laser resonator, e.g. windows, mirrors, lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H01S3/1653—YLiF4(YLF, LYF)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Definitions

  • the present invention relates to laser systems and methods for selectively processing a material of a single or multiple layer structure of a multimaterial, multilayer device and, in particular, to laser systems and processing methods that employ an output within a wavelength range that facilitates selective removal of an electrically conductive link or resistive film structure on a silicon substrate of an integrated circuit, as well ' as facilitates functional laser processing of active or dedicated devices that are sensitive to a certain spectrum of light.
  • Link processing which is presented herein only by way of example of selective material processing, may include total or partial removal, cutting, or vaporization of the link material.
  • link processing laser systems include model Nos. 8000C and 9000 manufactured by Electro Scientific Industries, Inc., which is the assignee of the present invention.
  • resistive film trimming and functional device trimming laser systems include model Nos. 44 and 4200, respectively, which are also manufactured by Electro
  • Figs. 1A and IB depict a conventional output energy distribution of a laser output or pulse 10 directed at an integrated circuit or memory link structure 12, which can be positioned between link terminators 14, and is typically covered by a protective layer 16 often the result of oxide passivation.
  • Link structure 12 may be composed of one or more layers of a single material or a composite "sandwich" of several materials including those required for anti-reflective coating, binding, or other manufacturing purposes.
  • link structure 12 may include sublayers of titanium and tungsten to enhance adhesion between aluminum base link material and a silicon substrate 22 which may include oxide layers.
  • Chlipala et al. suggest that a laser pulse 10 focused to a spot 18 of radius R (which is, for example, about 2 ⁇ m) and applied across link structure 12 should have a suitable duration or pulse width and be of sufficient energy at a certain wavelength to cause a temperature distribution capable of cutting link structure 12. Since the spatial or critical dimensions of spot 18 are typically (but not always) larger than the width (which is, for example, about 1 ⁇ m) of link structure 12, a portion of laser pulse 10 impinges on silicon substrate 22. Laser pulse 10 must, therefore, be tailored not to have energy sufficient to damage silicon substrate 22 or adjacent circuit structures 20 either by direct laser energy absorption, by residual pulse energy coupled into substrate 22 below link structure 12 after it is vaporized, or by thermal conduction.
  • Yields of memory devices have been dramatically improved by combining the use of 1.064 or 1.047 ⁇ m laser output with * the use of polysilicon and polycide link structures 12 to enable redundant memory cells.
  • polysilicon-based material has been used to fabricate link structures 12 because it is more easily processed by laser systems generating a conventional laser output at a wavelength of 1.047 ⁇ m or 1.064 ⁇ m at energy levels that do not prohibitively damage silicon substrate 22.
  • a laser output having well-controlled energy and power levels can generate across an entire polysilicon link structure 12 a desired temperature distribution that exceeds the melting temperature of polysilicon.
  • Scarfone et al. attribute this advantage to the relatively large optical absorption depth of polysilicon at 1.064 ⁇ m in combination with other favorable parameters such as the mechanical strength, the thermal conductivity, and the melting and vaporization temperatures of polysilicon, protective layer 16, substrate 22, and other materials involved.
  • link structures 12 Because metals have higher conductivity and are typically deposited as a top conductive layer of memory devices, manufacturers would like to switch the material of link structures 12 to metals such as, for example, aluminum, titanium, nickel, copper, tungsten, platinum, gold, metal-nitrides (e.g., titanium nitride), or other electrically conductive metal-like materials in new generations of high-density, high-speed memory chips, whose storage capacity would exceed 4 and even 16 megabits.
  • metals such as, for example, aluminum, titanium, nickel, copper, tungsten, platinum, gold, metal-nitrides (e.g., titanium nitride), or other electrically conductive metal-like materials in new generations of high-density, high-speed memory chips, whose storage capacity would exceed 4 and even 16 megabits.
  • metals and other electrically conductive materials have much shorter optical absorption depths and smaller absorption coefficients at 1.047 ⁇ m or 1.064 ⁇ m than the absorption depth and absorption coefficient of polysilicon-like structures, causing most of the 1.047 ⁇ m or 1.064 ⁇ m laser output energy to be reflected away. Consequently, the small amount of laser output energy absorbed heats only the topmost portion or surface of a high conductivity link structure 12 such that most of the underlying volume of link structure 12 remains at a lower temperature. Thus, it is very difficult to cleanly process a high conductivity link structure 12 with the same laser output energy and power levels used to process polysilicon-like structures.
  • resistor structures typically comprise thin films of nickel chromide, tantalum nitride, cesium silicide, or other resistive materials that are embedded within or layered upon a substrate of a different material, such as silicon, and may be laser processed or trimmed to provide resistor structures with desired values.
  • laser link processing laser output that employs conventional wavelengths and has sufficient power to insure clean trimming of resistive films on silicon substrates imposes some risk of damage to the substrate.
  • “Functional” laser processing or trimming of active dedicated devices is yet another example of selective material processing.
  • functional trimming a dedicated device is repeatedly trimmed and evaluated until it performs its dedicated function. Functional trimming is described in detail in "Functional Laser Trimming: An Overview," R.H. Wagner, Proceedings of SPIE, Vol. 611, pp 12-13 (Jan. 1986) and “Functional Laser Trimming of Thin Film Resistors on Silicon ICs, " M.J. Mueller and W. Mickanin, Proceedings of SPIE, Vol. 611, pp 70-83 (Jan. 1986) .
  • Functional trimming with conventional laser outputs such as 1.064 ⁇ m, 1.047 ⁇ m, or their harmonics presents a different problem from link or film processing.
  • An object of the present invention is, therefore, to provide a laser system and method for cleanly processing link or film structures fabricated, respectively, from various high conductivity (e.g. metallic) or resistive materials without damaging underlying or surrounding substrate or adjacent circuit structures.
  • Another object of this invention is to provide such a system and method that employ selected laser output parameters to exploit the differential optical absorbance between high conductivity or resistive materials and silicon in order to reduce or eliminate damage sustained by the silicon substrate from residual laser output coupled into the silicon substrate after the link or film structure has been vaporized or processed.
  • Another object of this invention is to provide such a system and method that employ selected laser output parameters to exploit the differential optical absorbance between high conductivity or resistive materials and silicon in order to efficiently vaporize high conductivity link or resistive film structures without affecting the silicon substrate or adjacent structures falling within the critical dimensions of an oversized spot of the laser output.
  • a further object of this invention is to provide such a system and method that utilize a larger processing window, i.e., accepts a greater variation in device construction and/or allows a greater variation in laser output power and energy levels, pulse widths, and pulse repetition frequencies to accurately process link or film structures.
  • Still another object of this invention is to provide such a system and method that can be relatively inexpensively retrofit into existing link or film processing laser systems.
  • the present invention exploits the differential absorption (also referred to as absorption contrast) between link or film material and the underlying substrate.
  • the system and method of the present invention provide laser output (in a nonconventional range of wavelengths for link or film processing) that optimizes absorption contrast between, for example, silicon and high conductivity or resistive film materials including metals or semiconductors, and results in relatively efficient link or film processing (cutting or vaporizing) without risk of damage to the surrounding and underlying substrate material.
  • silicon has been shown to be only slightly affected by laser output of suitable power in the 1.2-3.0 ⁇ m range, but aluminum, nickel, tungsten, platinum, and gold, as well as other metals, metal alloys such as nickel chromide, metal nitrides (e.g., titanium or tantalum nitride) , and cesium silicide absorb such laser output relatively well.
  • Conventional laser systems and methods for processing link structures 12 or film structures have emphasized the laser power absorption and temperature distribution properties of link structure 12, whereas the present invention considers the optical transmission/absorption properties of substrate 22 as well.
  • Conventional laser systems function primarily to control the temperature distribution within spot 18 by preferring 1.047 ⁇ m or 1.064 ⁇ m laser wavelengths over the 0.532 ⁇ m laser wavelength and manipulating the shape, including duration and power, of pulse 10 to avoid overheating substrate 22 while obtaining the highest possible uniform temperature distribution across link structure 12. Because the present invention exploits the differential absorbance behavior of link structures 12 and substrate 22, the attention to pulse shaping can be relaxed and a pulse 10 of greater peak power and shorter duration can be used without risking damage to substrate 22.
  • Existing link or film processing laser systems can be relatively inexpensively modified to generate output in the 1.2 to 3.0 ⁇ m wavelength range.
  • conventional laser devices that produce laser output within this wavelength range can be adapted for link or film processing.
  • Available laser devices that produce output within this wavelength range are conventionally employed in fiber optic communications, medical applications, military range finding, and atmospheric pollution monitoring.
  • Such laser systems have not, however, been used for general material processing because they are more complex and typically deliver laser output of significantly lower power or energy per pulse than, for example, a 1.064 ⁇ m Nd.YAG or a 10.6 ⁇ m C0 2 laser.
  • the conventional wisdom in laser material processing, of maximizing laser output average or peak power with desired beam quality reinforces the avoidance of using wavelengths that do not optimize output power.
  • the present invention employs a laser output having a wavelength window that maximizes absorption contrast for selective material processing, even though the peak power of such laser output maybe lower than that which is conventionally available.
  • Another advantage of the selective material processing achieved by the present invention is that it facilitates the functional laser processing or trimming of dedicated devices or devices having some light-sensitive or photo-electronic portions.
  • employing laser output having a wavelength greater than 1.2 ⁇ m to functionally process silicon-based devices substantially eliminates the undesirable laser-induced function shift or malfunction of the devices because the silicon-based light-sensitive or photo-electronic devices are virtually "blind" to wavelengths greater than 1.2 ⁇ m.
  • FIG. 1A is a fragmentary cross-sectional side view of a conventional semiconductor link structure receiving a laser pulse characterized by a particular energy distribution.
  • Fig. IB is a fragmentary top view of the semiconductor link structure and the laser energy distribution of Fig. 1A, together with adjacent circuit structure.
  • Fig. 2 shows graphical representations of optical transmission properties of silicon vs. wavelength for various silicon temperatures.
  • Fig. 3 shows graphical representations of the optical absorption properties of four different metals vs. wavelength.
  • Fig. 4 is a plan view of a preferred embodiment of a laser system incorporating the present invention.
  • Figs. 2 and 3 graphically show the optical transmittance properties of silicon and optical absorbance properties of different metals such as aluminum, nickel, tungsten, and platinum that may be used in future link structures 12.
  • Fig. 2 is an enlarged replication of a portion of Fig. 6e-52 from D.T. Gillespie, A.L. Olsen, and L.W. Nichols, Appl. Opt.. Vol. 4, p. 1488 (1965) .
  • N-type silicon will transmit nearly 50% of laser output directed at it in a wavelength range of about 1.12 to 4.5 ⁇ m when its temperature is between 25 and 300°C.
  • the transmittance of this type of silicon sharply decreases as the wavelength output drops below 1.12 ⁇ m.
  • Fig. 3 is a compilation of the relevant portions of absorbance graphs found in the "Handbook of Laser Science and Technology, " Volume IV Optical Materials: Part 2 By Marvin J. Weber, CRC Press, (1986) .
  • Fig. 3 shows that metals, such as aluminum, nickel, tungsten, and platinum, absorb usable laser output from a wavelength range from below 0.1 ⁇ m to 3.0 ⁇ m, with aluminum not absorbing quite so much as the other metals.
  • Metal nitrides e.g., titanium nitride
  • metal-like materials used to form link structures 12 have generally similar optical absorption characteristics. However, the absorption coefficients for such materials are not as readily available as are those for metals.
  • wavelengths such as 1.32 ⁇ m and 1.34 ⁇ m are preferred for most high conductivity link processing operations. Wavelengths such as 1.32 ⁇ m and 1.34 ⁇ m are sufficiently long to minimize damage to silicon substrate 22. The choice of 1.32 ⁇ m or 1.34 ⁇ m is also somewhat predicated on laser source availability and other complexities familiar to those skilled in the art.
  • a conventional diode- pumped, solid-state laser with a lasant crystal such as Nd:YAG, Nd:YLF, ND:YAP, or Nd:YV0 4 is reconfigured to produce output in the 1.2 to 3.0 ⁇ m wavelength range.
  • a redesigned laser employs resonator mirrors with appropriate dichroic coatings to be highly transmissive to the most conventional wavelength of the lasant crystal but have desired reflectivity at a selected wavelength within the range 1.2 ⁇ m to 3 ⁇ m and preferably at 1.32 ⁇ m or 1.34 ⁇ m.
  • Such dichroic coatings would suppress laser action at the most conventional wavelength of the lasant crystal, such as 1.06 ⁇ m for Nd:YAG, and enhance laser action at the selected wavelength, preferably 1.32 ⁇ m for Nd:YAG.
  • a diode-pumped or arc lamp-pumped solid-state laser having a lasant crystal of YAG doped with other dopants such as holmium (laser output at 2.1 ⁇ m) or erbium (2.94 ⁇ m) could be employed to deliver laser output within the 1.2 ⁇ m to 3 ⁇ m wavelength range.
  • all of the transmissive optics in a delivery path of the laser output beam are antireflection coated for the selected wavelength.
  • laser output power or energy monitoring devices are changed, for example, from Si for 1.064 ⁇ m to Ge or GaAlAs for 1.32 ⁇ m or 1.34 ⁇ m, to be responsive to the selective wavelength.
  • Other minor optical modifications to compensate for changes in laser output focusing length are preferred and known to those having skill in the art.
  • laser 52 is positioned against a heat sink 60 and is powered by a diode laser power supply 62 that is controlled by a processing unit 64.
  • Processing unit 64 is also connected to an impedance-matched RF amplifier 66 and controls signals delivered to a transducer coupled to a Q-switch 68.
  • Q-switch 68 is preferably positioned between lasant crystal 58 and an output coupler 70 within a resonator cavity 72.
  • a targeting and focusing system 74 may be employed to direct laser output to a desired position on link structure 12 or other target material. Pumping, Q-switching, and targeting of the laser system 50 of the preferred embodiment are accomplished through conventional techniques well-known to persons skilled in the art.
  • An input mirror coating 76 on lasant crystal 58 and an output mirror coating 78 on output coupler 70 are preferably highly transmissive at the conventional 1.047 ⁇ m YLF emission wavelength.
  • input mirror coating 76 is transmissive to the AlGaAs emission wavelength range and reflective at about 1.32 ⁇ m, and coating 78 is only partly transmissive at 1.32 ⁇ m to permit laser operation.
  • Laser output in the 1.2 ⁇ m to 3.0 ⁇ m range can effectively trim resistor material, such as nickel chromide, tantalum nitride, cesium silicide, and other commonly used resistive materials, but does not substantially stimulate undesirable photocurrents on the photodiode or light- sensitive, typically silicon-based, portions of the devices.
  • resistor material such as nickel chromide, tantalum nitride, cesium silicide, and other commonly used resistive materials
  • Higher power laser output may also raise the link or film structure material temperature more quickly and supply enough energy to exceed the required latent heat of vaporization of the link or film material, therefore resulting in direct vaporization of most or all of the link or film structure material.
  • This direct vaporization is preferred since it will result in little chance of redeposition of the "removed" link or film structure material back onto the surrounding area of the substrate.
  • the laser power is not high enough due to laser system limitations or due to avoiding the risk of damaging the silicon substrate (as with some conventional link or film processing laser systems) , then the direct vaporization rate of the link or film structure material would be much lower. Link or film structure material in the liquid state might then instead be splashed away and redeposited on the surrounding area of the silicon substrate 22 as a conductive "slag" which may cause malfunction of the integrated circuit device.
  • high ' conductivity link structures 12 or resistive film structures are processed in an oxygen- rich atmosphere to promote the oxidation of the liquid link or film material splashed away (i.e., the "slag"), as well as the very small amount of remaining liquid link or film material in the original link or film position so that they become non-conductive oxides, thereby further reducing the chance of the formation of a conductive bridge over the opened link or short circuit to another part of the integrated circuit, thus improving the yield of the laser processing system.
  • the "slag" the very small amount of remaining liquid link or film material splashed away
  • an oxygen concentration sufficient to generate non-conductive slag will vary with the nature of the material processed.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lasers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
PCT/US1993/008484 1992-09-10 1993-09-10 System and method for selectively laser processing a target structure of materials of a multimaterial, multilayer device WO1994006182A1 (en)

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KR1019950700946A KR100231811B1 (ko) 1992-09-10 1993-09-10 다재료, 다층 디바이스 재료의 타겟 구조를 선별 레이저 처리하기 위한 시스템 및 방법
GB9500774A GB2283859B (en) 1992-09-10 1993-09-10 System and method for selectively laser processing a target structure of materials of a multimaterial, multilayer device
US08/343,778 US5473624A (en) 1992-09-10 1994-11-22 Laser system and method for selectively severing links

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US07943875 US5265114C1 (en) 1992-09-10 1992-09-10 System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device
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JP2625261B2 (ja) 1997-07-02
SG81853A1 (en) 2001-07-24
GB2283859B (en) 1996-07-03
JPH07506221A (ja) 1995-07-06
GB2283859A (en) 1995-05-17
KR100231811B1 (ko) 1999-12-01
GB9500774D0 (en) 1995-03-08
US5265114A (en) 1993-11-23
US5265114C1 (en) 2001-08-21
US5569398A (en) 1996-10-29
US5473624A (en) 1995-12-05
TW236032B (en, 2012) 1994-12-11

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