WO1992022982A1 - Dispositif de conversion photoelectrique, dispositif d'enregistrement d'images et dispositif d'enregistrement/reproduction d'images - Google Patents

Dispositif de conversion photoelectrique, dispositif d'enregistrement d'images et dispositif d'enregistrement/reproduction d'images Download PDF

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Publication number
WO1992022982A1
WO1992022982A1 PCT/JP1991/000781 JP9100781W WO9222982A1 WO 1992022982 A1 WO1992022982 A1 WO 1992022982A1 JP 9100781 W JP9100781 W JP 9100781W WO 9222982 A1 WO9222982 A1 WO 9222982A1
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WIPO (PCT)
Prior art keywords
solid
photoelectric conversion
image
information
recording
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Application number
PCT/JP1991/000781
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English (en)
Japanese (ja)
Inventor
Masuo Tsuji
Original Assignee
Seiko Epson Corporation
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Publication date
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Priority to PCT/JP1991/000781 priority Critical patent/WO1992022982A1/fr
Publication of WO1992022982A1 publication Critical patent/WO1992022982A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/58—Means for changing the camera field of view without moving the camera body, e.g. nutating or panning of optics or image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/48—Increasing resolution by shifting the sensor relative to the scene

Definitions

  • the present invention relates to a photoelectric conversion device, a video recording device, and a video reproduction device having a solid-state imaging device.
  • the solid-state imaging device in the photoelectric conversion device which obtains information on the solid-state imaging device optically imaged by the conventional optical imaging means such as an optical lens and the solid-state imaging device, performs photoelectric conversion and accumulation. It has a one-dimensional or two-dimensional array of pixels and a circuit having a scanning function for sequentially taking out signal charges accumulated in each pixel in a time-series manner.
  • looking at the two-dimensional solid-state image sensor it can be roughly divided into two by the scanning method.
  • One is that the method of electron beam scanning in the image pickup tube is replaced in principle with an integrated circuit as it is, using MOS, etc., in which a selection pulse is sequentially sent to each pixel and the signal charge stored there is read.
  • the other is using a CCD or the like that has a self-scanning (transfer) function.
  • the signal charges accumulated in each pixel are sequentially transferred in one direction, and finally extracted as signals. This method is called the charge transfer method.
  • the image information is scanned in the horizontal direction and output serially in time.Next, when the horizontal scanning is completed, the horizontal scanning is performed one pixel down in the vertical direction. As it moves, two-dimensional image information is extracted by repeating horizontal scanning like a TV video signal.
  • Fig. 19 shows the configuration of an interline type CCD as a typical conventional example. A simple model will be described with a total of 36 pixels, 6 x 6 pixels. The shaded portions 101 to 136 are photosensitive portions, and 141 to 146 are vertical CCDs. 147 is a horizontal CCD and 148 is an output amplifier.
  • 20 is a cross-sectional structure diagram of the interline CCD, and numeral 151 denotes an N + diffusion layer formed on the substrate surface, which is a photodiode portion which responds to incident light 158 from above, and numeral 152 is P-type diffusion layer, 153 is an N-diffusion layer, which is a vertical CCD. Reference numerals 154 and 155 denote P + diffusion layers, which are channel stops. The shaded area of 156 is silicon oxide, which is an insulator. 157 is an aluminum shield. As is clear from FIG. 20, there is a non-photoelectric conversion region other than the photodiode in the horizontal direction on the solid-state image sensor surface of the two-dimensional CCD, and a non-photoelectric conversion region similarly exists between pixels in the vertical direction. Existing.
  • FIG. 21 shows a block diagram of a conventional photoelectric conversion device that converts light information into electrical information.
  • Subject 35 0 The optical information 400 is converted into optical imaging information 410 by the optical imaging means 370, and further obtained as electrical information 420 by the solid-state imaging device 360. Is done.
  • FIG. 22 shows a specific conventional photoelectric conversion device and a photoelectric conversion device having a solid-state image pickup device for converting the formed image into electrical information.
  • Reference numeral 171 denotes a typical lens as an optical imaging means.
  • Reference numeral 172 denotes a solid-state image sensor.
  • FIG. 23 shows an image 17 4 formed on the solid-state image sensor 17 2.
  • Reference numerals 201 to 236 denote photodiode portions of each pixel.
  • this photodiode portion is a photoelectric conversion portion, and the other portions are non-photoelectric conversion regions. For this reason, even if an image of the subject is formed outside the photo diode portion, the image cannot be detected electrically. In other words, no matter how high the resolution of the optical imaging device is, the information that can be actually electrically extracted is only the part visible from the so-called windows indicated by the photodiodes 201 to 236. It is.
  • the CCD of 23 inch optical system with 250 thousand pixels has a pixel pitch of 18 microns in the horizontal direction and this 18 Inside, a photodiode, a TG (transfer gate) and a vertical CCD are included.
  • a recent 1Z2 inch optical CCD with 400,000 pixels has a pixel pitch of about 8.5 microns.
  • the opening of the photodiode where the incident light is used is 25 to 30%, The conversion efficiency is not good, and the miniaturization makes the photoelectric conversion output even weaker, and the signal-to-noise ratio, the so-called SZN ratio, gets worse.
  • the CCD type was explained as a conventional example, but the MOS type also has the same problem.
  • an object of the present invention is to provide a high-resolution photoelectric conversion device without increasing the cost and the signal-to-noise ratio SZN.
  • the present invention relates to a photoelectric conversion device having an optical imaging means and a solid-state imaging device for converting the formed image into electrical information, wherein a relative relationship between an optically formed image and the solid-state imaging device is provided.
  • a low-noise, high-resolution photoelectric conversion device by processing the extracted electrical information; and providing a plurality of positions at different relative positions from the photoelectric conversion device.
  • a video recording device for recording the electrical information; and a video playback device for reading and synthesizing the electrical information recorded in the video recording device. At multiple positions with different relative positions
  • the means for combining the electrical information and the synthetic electrical information A video recording device B having recording means is provided.
  • the optimum relative positional relationship can be determined. It is intended to provide a photoelectric conversion device characterized in that it is controlled so that it can be easily maintained.
  • the optimum relative positional relationship can be determined. It is characterized by control so that it can be easily maintained.
  • information on each imaging element surface optically imaged in a substantially photoelectric conversion region (photodiode region) and a non-photoelectric conversion region of each pixel is optically formed.
  • the relative positional relationship between the image and the image sensor is changed on the same plane as the image sensor surface, and image information optically imaged at a plurality of positions having different relative positional relationships of the same subject is obtained.
  • Video information which is electrical information extracted from the solid-state semiconductor imaging device, is recorded in a recording device before or after the synthesis. If recorded before compositing, read out the information from the recording device and compose to reproduce the video information.
  • the optimum relative positional relationship is obtained. Is controlled so that is easily maintained.
  • a photoelectric conversion device including an optical imaging unit and a solid-state imaging device that converts the formed image into electrical information
  • an optically formed image and The positional relationship with the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device, and image information optically formed at a plurality of positions having different relative positional relationships is transmitted from the solid-state imaging device.
  • image information optically formed at a plurality of positions having different relative positional relationships is transmitted from the solid-state imaging device. Extracted multiple times as electrical information, in other words, each image
  • the method of the present invention means to increase the number of windows without reducing the size of the so-called windows of the light receiving unit which is the photoelectric conversion unit.
  • This has the effect of increasing the resolution of the solid-state imaging device, as is clear from the sampling theorem, and the present invention provides a high-resolution optical signal without increasing the cost and the signal-to-noise ratio SZN. It is possible to perform electrical conversion. Also, while maintaining the noise ratio SZN and resolution as before, the size of the imaging device such as a lens, which is a component of the photoelectric device, and the solid-state imaging device can be reduced and the cost can be reduced, and the cost of the photoelectric device itself can be reduced. It is possible to reduce the size.
  • the relative position is not necessarily fixed at all within a finite time during which the imaging information is converted into the electrical information in the image sensor at each of the relative positions.
  • the above effect can also be obtained.
  • This is a model in which the relative position changes continuously with time in a fixed cycle. If the center of gravity of the relative position is different from each other in each time divided in the fixed cycle, the solid-state imaging device Since the position and center of gravity of the image information captured by each pixel in the pixel are different from each other, the obtained electrical information is synthesized and compared with the case where the relative position is fixed to one place. Because it is possible to extract detailed image information It is white.
  • the effect of increasing the resolution can also be expected by actually capturing the imaging information during the movement time between a plurality of different positions as image information at a plurality of different relative positions near each other. Therefore, it is possible to use the optical information as a high-resolution photoelectric device while efficiently using the optical information during the movement time without completely fixing the relative positions during the time of capturing the optical information from the subject. .
  • the size of the window at the completely fixed position in the above description even if the image information captured at each different relative position slightly overlaps, in other words, the so-called window overlaps slightly. Since the position and center of gravity of the image information are different from each other, the effect of the present invention can be expected.
  • the method of the present invention is applicable to an interlaced image sensor and a color image sensor, and is applied to a video camera, an electronic still camera, and the like. It can be applied to one-dimensional line sensors used for faxing, etc., and its application range is wide.
  • the photoelectric conversion device when changing the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device on the same plane as the surface of the solid-state semiconductor image pickup device, By detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor imaging device based on electrical information of image information optically imaged at a plurality of positions having different relationships, a device manufacturing stage The alignment accuracy of the relative position at It is easy to assemble without requiring much, and has the effect of automatically adjusting the mechanical displacement of the relative position due to aging of the device.
  • the present invention can be expected to have effects such as high resolution, miniaturization, and cost reduction even in a recording device capable of recording and reproducing, such as an electronic still camera and a video camera, in addition to the photoelectric conversion device.
  • one recording method of the present invention uses a large area of a recording medium in the conventional recording format to record high-resolution video information, and devises a reading method such as thinning out the reading. It explains that it is possible to use a common recording system with one mat. Therefore, when the recording apparatus in the case of the embodiment of FIG. 24 using the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention, the use of the recording apparatus is not limited to a normal video signal.
  • a recording method characterized by sequentially and separately recording in a recording device by providing means for dividing intermittently serial video information at a plurality of sampling positions into a plurality of pieces of video information in front of the recording device is also considered. Therefore, the present invention is highly developable, such as being applied to other applications.
  • FIG. 1 is a block diagram of an embodiment of the present invention.
  • FIG. 2 is a configuration diagram in an embodiment of the present invention.
  • FIG. 3 is a block diagram of another embodiment 2 of the present invention.
  • FIG. 4 is a configuration diagram of still another embodiment 3 of the present invention.
  • FIG. 5 is a configuration diagram of still another embodiment 4 of the present invention.
  • FIG. 6 is a configuration diagram of still another embodiment 5 of the present invention.
  • FIG. 7 is a configuration diagram of still another embodiment 6 of the present invention.
  • FIGS. 8 (a) and 8 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the first and second embodiments of FIGS. 2 and 3 of the present invention.
  • FIG. 4 is a diagram showing a positional relationship between each pixel and a photodiode portion.
  • FIG. 9 is a diagram showing the relationship between the synthesized window of FIGS. 8 (a) and 8 (b) and the image 174 formed.
  • FIGS. 10 (a) and 10 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the case of the third and fourth embodiments of FIGS. 4 and 5, respectively.
  • FIG. 4 is a diagram showing a positional relationship between a pixel and a photodiode portion.
  • FIG. 11 is a diagram showing the relationship between the combined window of FIGS. 10 (a) and 10 (b) and the image 174 formed.
  • FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) are solid-state imaging devices in the case of the fifth and sixth embodiments of FIGS. 6 and 7 of the present invention.
  • FIG. 17 is a view showing the positional relationship between the pixels 174 and 201 to 236 formed on the image 172 and the photodiode unit of each pixel.
  • FIG. 13 is a diagram showing the relationship between the four synthesized windows shown in FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) and the image 174 formed.
  • FIG. 14 is a block diagram of a block according to still another embodiment of the present invention.
  • FIG. 15 is a block diagram of a block according to still another embodiment of the present invention.
  • FIG. 16 is a block diagram of a block according to still another embodiment of the present invention.
  • FIG. 17 is a block diagram of still another embodiment of the present invention.
  • FIG. 18 is a block diagram of still another embodiment of the present invention.
  • FIG. 19 is a block diagram of an in-line CCD as a conventional example.
  • FIG. 20 is a cross-sectional view of a conventional interline CCD. .
  • FIG. 21 is a block diagram of a conventional photoelectric conversion device.
  • FIG. 22 is a photoelectric conversion device having a conventional optical imaging means and a solid-state imaging device for converting the formed image into electrical information.
  • FIG. 3 is a view showing an image 1 ⁇ 4 formed.
  • FIG. 24 is a block diagram of an imaging-recording-reproducing-display system composed of a video recording device A 700, a video reproducing device 701, and a display device 7002 according to an embodiment of the present invention.
  • FIG. 5 is a block diagram of an imaging-recording-reproducing-display system composed of video recording devices B and 703, reading means 731 and a display device 72, which is another embodiment of the present invention.
  • FIG. 6 is an internal block configuration diagram of the synthesizing means 7 22 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
  • FIG. 27 is a block diagram of another embodiment of the synthesizing means 7 23 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
  • FIG. 28 is a block diagram of a block according to another embodiment of the present invention.
  • FIG. 29 is a block diagram of an embodiment of the present invention shown in FIG. 28, which is a block diagram of the imaging / imaging element relative position detection control means 50 ⁇
  • FIG. 30 is a block diagram of still another embodiment of the present invention.
  • FIG. 1 is a block diagram showing a photoelectric conversion device according to an embodiment of the present invention.
  • the optical information 400 from the subject 350 is converted into optical image information 11 by the optical imaging means 371, and further converted into electrical information 420 by the solid-state imaging device 361. It is taken out.
  • the imaging / image sensor relative position change control signal 4300 changes the imaging / image sensor relative position change means 390 to the optical imaging means 371 and the solid-state image sensor 361 By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positions are changed.
  • FIG. 28 shows a block diagram of another embodiment of the present invention.
  • Optical information from the subject 35 It is converted into optical imaging information 411 by the biological imaging means 371, and is further extracted as electrical information 42 by the solid-state imaging device 361.
  • the imaging and imaging element relative position changing means 390 are smaller than the optical imaging means 371 and solid-state imaging element 361 by the imaging and imaging element relative position change control signal 430. By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and at a plurality of positions having different relative positions.
  • FIG. 28 is different from FIG. 1 which is a block configuration diagram in the embodiment of the present invention, in that the imaging / imaging element relative position detection control means 500 0 stores the electrical information 420.
  • the relative position is detected as an input signal, and an image formation / image pickup device relative position change control signal 4330 is output so as to optimize the relative position displacement amount, and the image formation / image pickup device relative position change means 3 is output.
  • FIG. 29 is a block diagram of the embodiment of the present invention shown in FIG. 28, and shows an embodiment of the imaging / imaging element relative position detection control means 50 block.
  • the imaging / imaging element relative position change control signal 430 is described as a single control signal, but as shown in the embodiments of the present invention after FIG. 2 to be described later.
  • the direction in which the relative position is changed becomes complicated, it is necessary to consider separately the signal for controlling the direction of change and the signal for controlling the amount of displacement for the imaging / relative position change control signal 430 of the image sensor. Is coming.
  • the imaging / image sensor relative position change control signal 430 is a signal that changes in both the positive and negative directions with respect to the reference potential, and indicates the direction in which the relative position is changed in positive and negative directions. It will be described as a signal shown. Naturally, the positive / negative repetition frequency matches the imaging / image sensor relative position change frequency.
  • the electrical information 420 is input to the electrical information synthesizing means 600, and the imaging and image sensor relative position and direction reference signal output from the imaging and image sensor relative position and direction reference signal generating means 62 are input.
  • the signal is controlled and synthesized by the signal No. 4 2 3 to obtain a synthesized electric signal 4 21.
  • This electrical information synthesizing means 6 ⁇ 0 will be described in further detail.
  • Electrical information 420 extracted at one image formation / image sensor relative position is delayed by a delay element or a storage element to form another image. '' It combines the electrical information 420 extracted at the relative position of the image sensor, and the combined electrical signal 421, which is the output, is extracted at multiple relative positions of the imaging device and the image sensor.
  • the obtained electrical information 420 is synthesized so as to be extracted just in the order of the physical imaging position in the image sensor.
  • the signal as the electrical information of the actual image formation may be used from the combined electrical signal 421, or another combining means may be used separately from the electrical information 420.
  • This synthesizing technology can be realized as an application of a video signal synthesizing technology that is displaced in the vertical direction of scanning lines, which is one of the high image quality technologies currently implemented in televisions and videos. .
  • a video signal synthesizing technology that is displaced in the vertical direction of scanning lines, which is one of the high image quality technologies currently implemented in televisions and videos.
  • horizontal and vertical synchronization signals are required together with the electrical information 420 from the imaging device, similar to the video signal synthesis technology for television, video, etc. .
  • the synthesized electric signal 421 is inputted to the high frequency component detecting means 601, and the higher the high frequency component of the synthesized electric signal 421, the higher the high frequency detection output 422.
  • the controller 603 forms an image with the high frequency detection output 422.Image is formed based on the image sensor relative position direction reference signal 423.Image is formed by determining the displacement amount of the image sensor relative position.Image sensor Outputs relative position change control signal 4330.
  • the displacement amount becomes appropriate, the composite electric signal 421 has the highest frequency component, and is used as a high-resolution photoelectric conversion device. Function. In other words, the displacement amount may be changed, and the combined electric signal 421 may be automatically adjusted so as to have the highest frequency component.
  • This technology is used for auto cameras used in video cameras, etc. It can be realized by a technology similar to what is called a piezo autofocus in the contrast detection method, a so-called passive type contrast technology.
  • a piezo auto force method the image sensor is moved by the piezo element, and when the image is focused and the outline of the image is clear, the high-frequency component increases in the video signal, so the component is examined and this is used as the focus voltage. is there.
  • the relative positional relationship between the optical imaging and the imaging device is changed on the same plane as the imaging device surface.
  • the optical imaging and the imaging are performed. This is a method in which the relative positional relationship with the element is changed in a direction perpendicular to the imaging element surface, that is, in the direction in which the focus changes.
  • the direction of change of the relative position and the intended purpose are completely different, but general relative As a method of controlling the positional relationship, it is possible to respond to the conventional technology.
  • the present invention is a method of adjusting the displacement of the relative position by using optical information from a subject.
  • Such a state of the subject generally appears as a loss of focus even in a so-called passive type and an autofocus method in a contrast detection method, but similarly to the method for solving the problem, the present invention is also applicable.
  • the control unit 603 in Fig. 29 a method for setting an appropriate time constant for control, and an appropriate amount of This can be dealt with by a method such as storing the state of the position.
  • the relative positional relationship between the optically formed image and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device. It is characterized in that image information optically formed at a plurality of different positions is extracted as electrical information from the solid-state imaging device, and a combination of the plurality of electrical information is used.
  • this synthesizing technique is also possible by applying a high-quality technique for television, video, etc., so that the imaging-image sensor relative position detection control means 500 in FIG. Embodiments may consider other methods, but further detailed description is omitted.
  • a part of the imaging / relative position detection control means 500 of the electric information synthesizing means 600 and the high-frequency component detecting means 6 ⁇ 1 may be incorporated in the solid-state image sensor 36 1. Possible ⁇
  • Imaging ⁇ Blocks of image sensor relative position detection control means 5 ⁇ 0 are common and will not be described.
  • the imaging-imaging element relative position changing means 390 which controls the imaging element relative position changing means 390
  • the imaging element relative position changing control signal 430 itself is the above-described omitted imaging. The explanation will be made assuming that the block is generated.
  • FIG. Figure 2 7 to 7 are more specific embodiments of the embodiment corresponding to FIG. 1 of the present invention.
  • the imaging / imaging element relative position changing means 390 is composed of the optical imaging means 37 1 and the solid-state imaging element 36. It is assumed that it is not necessary to move both of them, only one of them is sufficient.
  • FIG. 2 is a configuration diagram of an embodiment of the present invention.
  • Reference numeral 171 denotes a representative lens as optical imaging means
  • reference numeral 172 denotes a solid-state image sensor
  • the upper image is 174
  • 175 is a component that changes the relative positional relationship between the optically formed image and the solid-state imaging device on the same plane as the surface of the solid-state imaging device.
  • 175 is attached to the lower part of the solid-state imaging device of 172, but is schematically shown, and a part is fixed to the solid-state imaging device of 172, and other parts are fixed.
  • any element that causes mechanical displacement by an electric signal such as a piezo element may be used.
  • the mounting position may be left, right, up, down, or the back, without being limited to the lower portion.
  • the L direction indicated by the arrow indicates that the 17 2 solid-state imaging device moves to the left, and the R direction indicated by the arrow indicates that the 1 ⁇ 2 solid-state imaging device moves to the right.
  • FIG. 3 is a block diagram of another embodiment 2 of the present invention.
  • 17 1 is a representative lens as an optical imaging means
  • 17 2 is a solid-state
  • the image formed on the solid-state imaging device is 174.
  • the difference from FIG. 2 is that in order to change the relative positional relationship between the optically imaged image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor, the difference in FIG. It is not to move the solid-state imaging device, but to move it on the optical imaging device side.
  • the moving parts 17 6 are attached to the lower part of the 17 1 lens, but are schematically shown in the same way as in Fig. 2, with a part fixed to the 1 1 lens and other parts fixed. Any material that causes mechanical displacement by an electric signal such as a piezo element may be used.
  • FIG. 4 shows still another embodiment 3 of the present invention
  • FIG. 2 shows a case where the solid-state image sensor 17 2 is moved left and right while FIG. 4 shows a case where the solid-state image sensor 17 2 is moved up and down.
  • Reference numeral 177 denotes a part corresponding to 175 in FIG. U direction is 1
  • the solid-state image sensor 72 moves upward, and the D direction indicated by an arrow indicates that the solid-state image sensor 72 moves downward.
  • FIG. 5 shows still another embodiment 4 of the present invention
  • FIG. 3 shows that the image 17 4 formed on the solid-state image pickup device 17 2 is moved left and right on the optical imaging device side.
  • Fig. 5 shows the case of moving up and down.
  • Reference numeral 178 denotes a part corresponding to 176 in FIG.
  • the lens 17 1 moves upward, and the solid-state image sensor 17 2 moves downward relative to the image 17 4 formed as in the case of Fig. 2.
  • the lens 17 1 moves downward, and the lens 17 1 moves relative to the image 17 4 formed in the same way as in FIG. Indicates that the solid-state image sensor moves upward.
  • FIG. 6 shows still another embodiment 5 of the present invention, which is an example in which FIGS. 2 and 4 are combined, in which the solid-state imaging device can be moved up, down, left, and right.
  • FIG. 7 shows still another embodiment 6 of the present invention, which is an example in which FIG. 3 and FIG. 5 are combined.
  • And 172 solid-state imaging devices can be moved up, down, left, and right.
  • FIGS. 6 and 7 by combining the examples of FIGS. 2 and 5, or by combining the examples of FIGS. It is also possible to divide into optical imaging means.
  • FIG. 8 (a) and FIG. 8 (b) correspond to FIG. 2 and FIG. FIG. 3 is a diagram showing a positional relationship between an image formed on a solid-state image sensor 172 and a photodiode portion of each of pixels 201 to 236 in Examples 1 and 2 in FIG. .
  • FIG. 8 (a) shows the case where the solid-state image sensor 172 is displaced to the left in the horizontal direction relative to the image 174 formed on the solid-state image sensor 172
  • FIG. 8 (b) The case where the solid-state imaging device 172 is displaced to the right in the horizontal direction relative to the formed image 174 is shown.
  • the horizontal displacement of the solid-state imaging device 172 in FIGS. 8A and 8B is 12 pixel pitches.
  • FIG. 9 shows the relationship between the combined window of FIGS. 8 (a) and 8 (b) and the image 174 formed. In this case, it is possible to increase the horizontal resolution as is clear from the figure.
  • FIGS. 10 (a) and 10 (b) show the solid-state image pickup device 172 in the case of the third and fourth embodiments of FIG. 4 and the fifth group of the present invention, respectively.
  • FIG. 18 is a diagram showing a positional relationship between the formed images 174 and 201 to 236 with respect to a photodiode portion.
  • FIG. 10 (a) shows the case where the solid-state image sensor 172 is displaced upward in the vertical direction relative to the image 1174 formed on the solid-state image sensor 172
  • FIG. ) Shows the case where the solid-state imaging device 172 is displaced downward in the vertical direction relative to the formed image 174.
  • FIGS. 10 (a) shows the case where the solid-state image sensor 172 is displaced upward in the vertical direction relative to the image 1174 formed on the solid-state image sensor 172.
  • FIG. 11 shows the relationship between the synthesized window of FIGS. 10 (a) and 10 (b) and the image 174 formed. In this case, it is possible to increase the vertical resolution as is evident from the figure.
  • FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) show the embodiments 5 and 6 of FIGS. 6 and 7 of the present invention.
  • FIG. 18 is a diagram showing a positional relationship between an image 174 formed on a solid-state imaging device 172 and photodiodes 201 to 236 in each case.
  • FIG. 12 (a) shows a case where the solid-state image sensor 172 is displaced upward in the vertical direction and leftward in the horizontal direction relative to the image 17 formed on the solid-state image sensor 172.
  • First 2 (b) shows the case where the solid-state image sensor 172 is displaced vertically upward and horizontally to the right relative to the image 1174 formed on the solid-state image sensor 172.
  • Fig. 12 (c) shows the case where the solid-state image sensor 172 is displaced vertically downward and horizontally to the left relative to the image 174 formed on the solid-state image sensor 172.
  • Fig. 12 (d) shows that the solid-state image sensor 172 is displaced vertically downward and horizontally to the right relative to the image 174 formed on the solid-state image sensor 172.
  • Fig. 13 shows the four synthesized windows of Fig. 12 (a), Fig. 12 (b), Fig. 12 (c), and Fig. 12 (d).
  • the relationship of image 174 is shown. In this case, it is possible to increase the resolution both horizontally and vertically.
  • FIG. 14 shows a block diagram of still another embodiment of the present invention.
  • the optical information 400 from the subject 350 is converted into optical imaging information 412 by the optical imaging means 372, and the light direction is changed by the imaging position changing means 392 in the optical path.
  • the optical imaging information is changed into 4 13, which is further extracted as electrical information 4 20 by the solid-state imaging device 36 1.
  • the difference from the block configuration diagram of the embodiment of FIG. 1 of the present invention in FIG. 1 is that the imaging and the imaging device relative position changing means 3 are changed by the imaging and imaging device relative position change control signal 4330 in FIG. While 90 moves the optical imaging means 3 71 itself directly, in FIG.
  • FIG. 14 the direction of light of the optical imaging information 4 12 passing through the optical imaging means 37 2 is shown in FIG. Is moved by the imaging position changing means 392 in the optical path to form an image on the solid-state image sensor 361 as optical image information 413 and to extract it as electrical information 420.
  • the imaging / imaging element relative position change means 391 moves the solid-state imaging element 361, and the optical imaging information 413 and the solid
  • the relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 413 is transferred to the solid-state image sensor 361 at a plurality of positions having different relative positions. It is the same as in the case of FIG. 1 of the present invention in that electrical information is extracted as 42 ° from FIG.
  • Specific optical path imaging position As the position changing means 392, there is a method in which an optical mirror is placed in the optical path and the mirror itself is moved by an electric control signal to change the direction of the light, or an object that refracts and transmits light in the optical path is placed in the electric path.
  • a method using the properties of light such as reflection, refraction, transmission, etc. such as a method of changing the position of the object using a static signal, and a method of placing an object that changes the direction of light passing by an electric signal in the optical path. It is possible.
  • the imaging to move the solid-state imaging device 361, the imaging device relative position changing device 391 is not provided, and only the imaging position changing device 392 in the optical path is used.
  • Another embodiment is possible in which the relative positional relationship between 13 and the solid-state imaging device 36 1 is changed on the same plane as the surface of the solid-state imaging device.
  • FIG. 15 shows a block diagram of still another embodiment of the present invention. This will be described below in comparison with the case of FIG.
  • the optical information 400 from the subject 350 is turned into light 401 by changing the direction of the light by the optical path changing means 390, and then the optical imaging information 4 is obtained by the optical imaging means 372. It is converted to 14 and further extracted as electrical information 42 ⁇ ⁇ ⁇ by the solid-state imaging device 36 1.
  • FIG. 15 which has the same operation as the in-optical-path imaging position changing means 392 in FIG. That is, the optical path changing means 390 for changing the direction of the light is located in front of the optical imaging means 372.
  • the imaging / imaging element relative position changing means 391 moves the solid-state imaging element 361 by the imaging / imaging element relative position change control signal 4330.
  • the relative positional relationship between the optical imaging information 4 14 and the solid-state image sensor 36 1 is changed on the same plane as the solid-state image sensor surface, and the solid-state image sensor 36
  • the point that the optical imaging information 4 14 is converted from 1 and extracted as electrical information 4 2 ° is the same as in the case of FIG. 14 of the present invention.
  • the specific optical path changing means 390 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG.
  • an image is formed by moving the solid-state imaging device 361, and the optical imaging information 4 1 4 is obtained only by the optical path changing device 390 without the imaging device relative position changing device 391.
  • Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
  • FIG. 16 shows a block diagram of still another embodiment of the present invention.
  • the optical information 400 from the subject 350 can be image-formed and the direction of the light can be changed by the optical imaging means 379 with the variable optical path mechanism.
  • the optical imaging means with variable optical path mechanism 379 comprises a first optical imaging means 374, an optical path changing means 394, and a second optical imaging means 375.
  • the information 4 ⁇ ⁇ is converted into optical imaging information 415 by the first optical imaging means 374, and then the optical direction is changed by the optical path changing means 394 to obtain the optical imaging information.
  • the optical path changing means 3 94 is between the two optical imaging means 3 7 4 and 3 75 That is.
  • a plurality of lenses are generally used as high-precision optical imaging means, and the optical path changing means 394 is provided between the plurality of lenses.
  • the imaging / image sensor relative position change control signal 4330 causes the image / image sensor relative position change means 391 to move the solid-state image sensor 361, and the optical image information 417 and the solid
  • the relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 417 is electrically generated by the solid-state image sensor 361 at a plurality of positions having different relative positions.
  • the point of conversion and extraction as the target information 420 is the same as in the case of FIGS. 14 and 15 of the present invention.
  • the specific optical path changing means 391 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG.
  • an image is formed by moving the solid-state image sensor 361, and there is no image sensor relative position changing means 391, and only the optical path changing means 394 4 provides optical image information 4 1 7
  • Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
  • FIG. 17 shows a block diagram of still another embodiment of the present invention.
  • an embodiment of the present invention will be described in comparison with the case of FIGS. 14, 15 and 16.
  • Information 40 ° is converted into optical image information 418 by the optical imaging means 372, and is extracted as electrical information 422 by the solid-state imaging device 369 with the variable optical path mechanism.
  • the solid-state image pickup device with a variable optical path mechanism 369 is composed of an optical path changing unit 396 controlled by an imaging device and a relative position change control signal 430 and a solid-state image pickup device 365.
  • the optical image information 418 is turned into the optical image information 419 by changing the direction of light by an optical path changing means 396 controlled by an electric signal, and is formed on the solid-state imaging device 365. And retrieved as electrical information 42 ⁇ .
  • Embodiments of the present invention The difference from the case of FIGS. 14, 15 and 16 is that the light path changing means 3 96 and the conventional solid state image pickup device 365 are integrated to form a solid state image pickup device 36 with a light path variable mechanism. 9 is composed.
  • the solid-state imaging device 3669 with an optical path changing mechanism including the optical path changing means 3966 is a mechanical element of the optical path changing means in FIGS. 14, 15 and 16 as another embodiment.
  • FIG. 17 is slightly different from the embodiments of the present invention up to FIG. That is, the embodiments up to FIG. 16 provide a means for changing the relative positional relationship between an optically formed image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor.
  • the image information optically formed at a plurality of positions having different relative positional relationships was taken out as electrical information from the solid-state imaging device.
  • the image is optically formed instead of the relative positional relationship between the image formed optically and the solid-state image pickup device.
  • FIG. 18 shows a block diagram of still another embodiment of the present invention.
  • the optical information 400 from the subject 350 is converted into optical image information 450 by the optical image forming means 372, and the optical image information 460 is further converted by the light dividing means 460. 5 1 and other optical imaging information 4 5 2.
  • the optical imaging information 45 1 and 45 2 are selected by the light switching means 46 1 to become optical imaging information 45 3, which is imaged on the solid-state imaging device 36 1 and electrically connected.
  • the information is retrieved as 420.
  • the optical imaging means 37 2, the light splitting means 46 ⁇ , and the light switching means 46 1 finally turn on the solid-state image pickup device according to the selection of the optical imaging information 45 1 and 45 2.
  • the light switching means 4 61 may be controlled by 0. Further, here, the light splitting means 460 can be easily realized by a so-called half mirror, and the light switching means 461 can be easily realized by a so-called liquid crystal combination. Further, as can be inferred from other embodiments, an embodiment in which the optical imaging means 372 is arranged behind the light switching means 461 is possible.
  • a method using an optical fiber in an optical path from a subject a method of dividing an optical path into a plurality of optical paths as shown in FIG.
  • a number of embodiments can be considered, such as a method using not only a simple optical lens but also a completely different image forming means utilizing the interference fringe phenomenon of light, but the method of the present invention is all optical.
  • the relative positional relationship between the image formed on the solid-state image sensor and the photoelectric conversion region on the solid-state image sensor is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positional relationships are changed. This means that optically formed image information is extracted as electrical information from the solid-state imaging device.
  • the photoelectric conversion region and the non-photoelectric conversion region on the solid-state imaging device are one-to-one, and the relative displacement is set to half the repetition pitch of the photoelectric conversion region.
  • the moving amount of the relative position does not need to be half of the pitch, and even if the moving amount is other than that, the post-process for synthesizing the electronic information is changed, It is possible to achieve the object of the present invention.
  • the optimum value of the relative position is where the resolution becomes the best, and the combined value after combining the read electrical information is used.
  • the high-frequency components of electrical information increase most. Focusing on this point, as a method of optimally controlling the relative position in the system of the present invention, the relative position displacement amount is slightly changed, and after the electrical information of the present invention is synthesized. It is also possible to control the relative position while feeding back such that the integrated processing value becomes a peak value while detecting the high-frequency component of the combined electrical information and comparing it with the integrated value.
  • the imaging / imaging element relative position change control signal if it is fixed, it can be used as a conventional photoelectric conversion device having a lower resolution than the method of the present invention. is there. Focusing on this point, the conventional photoelectric conversion device is used when the movement of the subject itself is faster than the time required for the double reading and combining processing of the present invention, and the present invention is used when the movement of the subject itself is slower. Switching to use depending on the application, such as use as a high-resolution photoelectric conversion device, can be easily realized. This switching method is not limited to manual switching by the user who decides according to the application, and EDTV is currently developing as TV technology.
  • the technology for controlling the scanning method of the TV by judging whether there is a motion of the video from the electrical information of the video such as the motion compensation technology in It is also possible to control and automatically switch the imaging and relative position change control signal of the image pickup device. Furthermore, there are many combinations of switching methods to be used, such as switching only in the horizontal and vertical directions as needed. As described above, the methods of the present invention can be easily realized because the switching is easy, and the development is possible. Is great.
  • the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device is changed by a piezo element or the like in a direction perpendicular to the solid-state semiconductor image pickup device surface.
  • FIG. 24 is a block diagram of an image-recording-recording-reproducing-display system composed of a video recording device A, 700, a video reproducing device 701, and a display device 702 according to an embodiment of the present invention. ⁇ ⁇
  • the video recording device ⁇ ⁇ includes the photoelectric conversion device 705 and the recording device 71 7.
  • the electrical information 420 at a plurality of positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different from that of the solid-state semiconductor imaging device is determined by a recording device ⁇ 10 Is entered and recorded.
  • the recording device 7100 is a recording device that uses a semiconductor memory or a magnetic medium such as a magnetic disk or a magnetic tape. If it is a recording device that uses a magnetic disk, video recording device A constitutes a so-called electronic still camera that cannot record video, and if it is a recording device that uses magnetic tape, video recording device A can record video. It is possible to construct any kind of video camera.
  • the method of this embodiment of the present invention is different from a conventional so-called electronic still camera or video camera in that an image in which recorded electronic information is optically formed and the solid-state semiconductor imaging device are used.
  • the electrical information 420 in a plurality of ⁇ ' ⁇ s having different relative positional relationships is recorded before the electrical information 420 is synthesized.
  • the information filling density of the recording medium and the recording format specified by the recording device It is possible to record high-resolution video information for the storage capacity limited by the above. If the area of the recording medium is used as many as the number of positions having different positional relations in the conventional recording format, the recording format shared with the conventional format can be improved by devising a reading method such as reading thinning. It can also be a device.
  • the video reproducing device 701 comprises a reading means 730 and a synthesizing means ⁇ 2 ⁇ .
  • the video information 770 from the recording device 710 in the video recording device A is read by the reading means 730.
  • the read electrical signal 7 8 ⁇ corresponding to the electrical information 4 20 at a plurality of positions where the relative positional relationship between the optically formed image and the solid-state semiconductor imaging device is different is obtained by combining means 7 2 At 0, it is synthesized into normal electrical image information 79 °.
  • the synthesized ordinary electric video information 790 is visualized by the display device 702.
  • Display device 7 ⁇ 2 can be mounted on a normal television.
  • the recording device 7 10 is a recording device using a magnetic medium or the like, recording and reading are usually performed with a so-called magnetic head.
  • the recording device 7 10 is a semiconductor memory, recording and reading are usually performed by controlling a so-called read-write signal.
  • FIG. 25 shows a video recording apparatus B according to another embodiment of the present invention.
  • FIG. 3 is a block diagram of an imaging-recording-reproducing-display system composed of 703, reading means 731, and a display device 702. In this case, the difference from the embodiment in FIG.
  • the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device is recorded, and the recorded electrical information is read out and synthesized, whereas in FIG. 25, Before recording the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device, a means for combining the electrical information is disposed, and the combined electrical information is recorded.
  • the video recording device B includes the photoelectric conversion device 705, the synthesizing means 721, and the recording device 711.
  • the electrical information 42 at multiple positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different is obtained by combining means 721.
  • a normal video signal 791 which is input to the recording device 711 and recorded.
  • the recording device 71 1 can use a conventional recording device.
  • the video information 7 71 from the recording device 7 1 1 is read by the reading means 7 3 1, becomes normal electrical video information 8 ⁇ , and is visualized by the display device 7 0 2.
  • the extracted electrical signal is required It is necessary to perform the synthesis in accordance with the conditions.
  • the synthesis processing technology in the prior art is analog by CCD or the like, and digitally by memory (line memory, field memory). Memory, frame memory, etc.).
  • the synthesizing means 720 in FIGS. 24 and 25 are analog by CCD or the like, and digitally by memory (line memory, field memory). Memory, frame memory, etc.).
  • FIG. 26 is an internal block diagram of the combining means 722 corresponding to 720 in FIG. 24 and 721 in FIG.
  • Input signal 810 and output signal 816 are both analog electric signals.
  • the input signal 810 corresponds to 780 in FIG. 26 and 420 in FIG. 25, and the output signal 816 corresponds to 790 in FIG. 26 and 791 in FIG.
  • the input signal 810 is delayed by the delay circuit 74 °, and the input signal 810 and the delayed input signal 811 are input to the synthesizing unit 750 to become the synthesized output signal 816.
  • the delay time of the delay circuit 74 is matched with the relative position change time between the optically formed image and the solid-state semiconductor image pickup device, the image formed on the image pickup device surface is obtained. It is possible to take out the same composite output signal 8 16 as that obtained by continuously taking out.
  • FIG. 27 is an internal block diagram of another embodiment of the synthesizing means 723 corresponding to 720 in FIG. 24 and 721 in FIG. 25, similarly to FIG. 0,
  • Output signal 8 15 are the same analog electric as in Fig. 26
  • This is a method in which the signal is converted into a digital signal once by an AD converter, signal processing such as delay and synthesis is performed, and finally the signal is converted back into an analog electric signal by a DA converter.
  • the input signal 8110 corresponds to 780 in FIG. 24 and 420 in FIG. 25, and the output signal 815 corresponds to 79 ° in FIG. 24 and 791 in FIG.
  • Input signal 8 1 0 is AD converter 7
  • the signal is converted into a digital signal 812 by 60, and further becomes a delayed digital signal 813 by shift register 741.
  • the digital signal 8 12 and the delayed digital signal 8 13 are processed by the synthesizing unit 751 to become a digital synthesized signal 8 14. Further, the digital composite signal 814 is converted into an analog electric output signal 815 by the DA converter 761.
  • the combining means in the embodiment shown in FIGS. 26 and 27 are shown as analog electric signals for both the input and output signals.
  • FIG. 30 shows an embodiment of a video camera using the method of the present invention when performing electronic zoom processing.
  • Optical information 920 from a subject passes through an optical imaging means 900 having a zoom function, and the optical imaging information 921 forms an image on a solid-state imaging device 901.
  • the electrical information 923 extracted from the solid-state imaging device 901 is converted to a digital signal 924 by the AD converter 902, and the signal 925 processed by the DSP 903 is DA converted.
  • the image is again converted into an analog surface image signal 926 by the unit 9104.
  • the external control signals 933 are control signals for shutter speed, zoom magnification, etc., are input to the external input control section 907, and the individual control signals 933 are input to the microcomputer 908. .
  • the optical imaging means with a zoom function 9 ⁇ ⁇ is controlled by the microcomputer 9 ⁇ 8, and the zoom magnification and the focus adjustment are controlled by the optical system control signal group 927.
  • the imaging device relative position changing means 905 is formed by the imaging and imaging device relative position control signal 93 ° from the microcomputer 908, and the optical imaging device 900 with a zoom function is connected to the solid-state imaging device.
  • the relative position of 901 is controlled by the relative position control signal 928.
  • the solid-state image sensor scanning control signal group 931 from the microcomputer 908 becomes a scanning control signal 929 by the solid-state image sensor scanning unit 906, and controls the reading scan of the solid-state image sensor 9 Perform The control of the reading scan controls the shutter speed, the electronic zoom control, and the like.
  • a general zoom method is to change the magnification of an elephant imaged on a solid-state image sensor by a combination of optical lens groups. It is a method of extracting and expanding a specific area.
  • Such image processing can also be processed by expanding and processing a part of the screen inside the digital signal processor DSP on the image signal read from the solid-state image sensor, but here the signal from the solid-state image sensor is read
  • the method of controlling the reading scan from the solid-state imaging device scanning section 906 is limited to the center 1--4 screen surrounded by half the pixels of the solid-state imaging device 9001 in both the vertical and horizontal directions. This can be changed by scanning in the vertical and horizontal directions. At this time, pixels are lost between pixels on a screen that is simply zoomed (expanded).
  • the image sensor and relative position change means 905 are operated, and the image is synthesized by the DSP 903. It is possible to prevent the resolution from deteriorating by processing.
  • a general electronic zoom as a processing method of a vertical and a horizontal missing pixel, the method of the present invention is not used, and an image obtained by averaging the pixel data of an adjacent area as the missing pixel data using a DSP is used.
  • a method of processing and inserting interpolation is also possible, but as the zoom magnification increases, the resolution naturally deteriorates. For this reason, the resolution can be prevented from deteriorating by operating the method of the present invention in combination only when the electronic zoom magnification exceeds a certain value. In this case, the operating current can be reduced by using the method of the present invention only under certain conditions.
  • the recording apparatus in the embodiment shown in FIG. 24 in the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention to examine the usage thereof, even if the input is a normal video signal, the recording apparatus is temporally difficult.
  • By arranging means for dividing serial video information at multiple sampling positions to generate multiple video information at the front of the recording device it is also possible to consider a recording method characterized by recording separately and sequentially in the recording device. it can.
  • the present invention converts light from a subject into electrical information.
  • a method for increasing the resolution by similarly moving a display unit in a device that displays electrical information is also considered.

Abstract

L'invention se rapporte à un dispositif de conversion photoélectrique, à un dispositif d'enregistrement d'images et à un dispositif d'enregistrement/reproduction d'images ayant des niveaux de bruit faibles et des résolutions élevées. La position relative entre une image obtenue optiquement et le dispositif capteur d'images à solide est modifiée au niveau du plan de la surface du dispositif capteur d'images à solides, et les informations relatives aux images obtenues optiquement sont traitées en plusieurs endroits dont les positions relatives sont mutuellement différentes.
PCT/JP1991/000781 1991-06-11 1991-06-11 Dispositif de conversion photoelectrique, dispositif d'enregistrement d'images et dispositif d'enregistrement/reproduction d'images WO1992022982A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1991/000781 WO1992022982A1 (fr) 1991-06-11 1991-06-11 Dispositif de conversion photoelectrique, dispositif d'enregistrement d'images et dispositif d'enregistrement/reproduction d'images

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1991/000781 WO1992022982A1 (fr) 1991-06-11 1991-06-11 Dispositif de conversion photoelectrique, dispositif d'enregistrement d'images et dispositif d'enregistrement/reproduction d'images

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223388A (ja) * 1984-04-20 1985-11-07 Victor Co Of Japan Ltd 固体撮像装置
JPS61173586A (ja) * 1985-01-29 1986-08-05 Matsushita Electric Ind Co Ltd 画像入力装置
JPS61264873A (ja) * 1985-05-20 1986-11-22 Fujitsu General Ltd 固体撮像装置
JPS6298977A (ja) * 1985-10-25 1987-05-08 Fujitsu Ltd 固体撮像装置
JPS62157482A (ja) * 1985-12-27 1987-07-13 Canon Inc 撮像装置
JPS62159581A (ja) * 1986-01-07 1987-07-15 Canon Inc 撮像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223388A (ja) * 1984-04-20 1985-11-07 Victor Co Of Japan Ltd 固体撮像装置
JPS61173586A (ja) * 1985-01-29 1986-08-05 Matsushita Electric Ind Co Ltd 画像入力装置
JPS61264873A (ja) * 1985-05-20 1986-11-22 Fujitsu General Ltd 固体撮像装置
JPS6298977A (ja) * 1985-10-25 1987-05-08 Fujitsu Ltd 固体撮像装置
JPS62157482A (ja) * 1985-12-27 1987-07-13 Canon Inc 撮像装置
JPS62159581A (ja) * 1986-01-07 1987-07-15 Canon Inc 撮像装置

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