WO1992022982A1 - Photoelectric conversion device, image recording device and image recording/reproducing device - Google Patents
Photoelectric conversion device, image recording device and image recording/reproducing device Download PDFInfo
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- WO1992022982A1 WO1992022982A1 PCT/JP1991/000781 JP9100781W WO9222982A1 WO 1992022982 A1 WO1992022982 A1 WO 1992022982A1 JP 9100781 W JP9100781 W JP 9100781W WO 9222982 A1 WO9222982 A1 WO 9222982A1
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- photoelectric conversion
- image
- information
- recording
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/58—Means for changing the camera field of view without moving the camera body, e.g. nutating or panning of optics or image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/48—Increasing resolution by shifting the sensor relative to the scene
Definitions
- the present invention relates to a photoelectric conversion device, a video recording device, and a video reproduction device having a solid-state imaging device.
- the solid-state imaging device in the photoelectric conversion device which obtains information on the solid-state imaging device optically imaged by the conventional optical imaging means such as an optical lens and the solid-state imaging device, performs photoelectric conversion and accumulation. It has a one-dimensional or two-dimensional array of pixels and a circuit having a scanning function for sequentially taking out signal charges accumulated in each pixel in a time-series manner.
- looking at the two-dimensional solid-state image sensor it can be roughly divided into two by the scanning method.
- One is that the method of electron beam scanning in the image pickup tube is replaced in principle with an integrated circuit as it is, using MOS, etc., in which a selection pulse is sequentially sent to each pixel and the signal charge stored there is read.
- the other is using a CCD or the like that has a self-scanning (transfer) function.
- the signal charges accumulated in each pixel are sequentially transferred in one direction, and finally extracted as signals. This method is called the charge transfer method.
- the image information is scanned in the horizontal direction and output serially in time.Next, when the horizontal scanning is completed, the horizontal scanning is performed one pixel down in the vertical direction. As it moves, two-dimensional image information is extracted by repeating horizontal scanning like a TV video signal.
- Fig. 19 shows the configuration of an interline type CCD as a typical conventional example. A simple model will be described with a total of 36 pixels, 6 x 6 pixels. The shaded portions 101 to 136 are photosensitive portions, and 141 to 146 are vertical CCDs. 147 is a horizontal CCD and 148 is an output amplifier.
- 20 is a cross-sectional structure diagram of the interline CCD, and numeral 151 denotes an N + diffusion layer formed on the substrate surface, which is a photodiode portion which responds to incident light 158 from above, and numeral 152 is P-type diffusion layer, 153 is an N-diffusion layer, which is a vertical CCD. Reference numerals 154 and 155 denote P + diffusion layers, which are channel stops. The shaded area of 156 is silicon oxide, which is an insulator. 157 is an aluminum shield. As is clear from FIG. 20, there is a non-photoelectric conversion region other than the photodiode in the horizontal direction on the solid-state image sensor surface of the two-dimensional CCD, and a non-photoelectric conversion region similarly exists between pixels in the vertical direction. Existing.
- FIG. 21 shows a block diagram of a conventional photoelectric conversion device that converts light information into electrical information.
- Subject 35 0 The optical information 400 is converted into optical imaging information 410 by the optical imaging means 370, and further obtained as electrical information 420 by the solid-state imaging device 360. Is done.
- FIG. 22 shows a specific conventional photoelectric conversion device and a photoelectric conversion device having a solid-state image pickup device for converting the formed image into electrical information.
- Reference numeral 171 denotes a typical lens as an optical imaging means.
- Reference numeral 172 denotes a solid-state image sensor.
- FIG. 23 shows an image 17 4 formed on the solid-state image sensor 17 2.
- Reference numerals 201 to 236 denote photodiode portions of each pixel.
- this photodiode portion is a photoelectric conversion portion, and the other portions are non-photoelectric conversion regions. For this reason, even if an image of the subject is formed outside the photo diode portion, the image cannot be detected electrically. In other words, no matter how high the resolution of the optical imaging device is, the information that can be actually electrically extracted is only the part visible from the so-called windows indicated by the photodiodes 201 to 236. It is.
- the CCD of 23 inch optical system with 250 thousand pixels has a pixel pitch of 18 microns in the horizontal direction and this 18 Inside, a photodiode, a TG (transfer gate) and a vertical CCD are included.
- a recent 1Z2 inch optical CCD with 400,000 pixels has a pixel pitch of about 8.5 microns.
- the opening of the photodiode where the incident light is used is 25 to 30%, The conversion efficiency is not good, and the miniaturization makes the photoelectric conversion output even weaker, and the signal-to-noise ratio, the so-called SZN ratio, gets worse.
- the CCD type was explained as a conventional example, but the MOS type also has the same problem.
- an object of the present invention is to provide a high-resolution photoelectric conversion device without increasing the cost and the signal-to-noise ratio SZN.
- the present invention relates to a photoelectric conversion device having an optical imaging means and a solid-state imaging device for converting the formed image into electrical information, wherein a relative relationship between an optically formed image and the solid-state imaging device is provided.
- a low-noise, high-resolution photoelectric conversion device by processing the extracted electrical information; and providing a plurality of positions at different relative positions from the photoelectric conversion device.
- a video recording device for recording the electrical information; and a video playback device for reading and synthesizing the electrical information recorded in the video recording device. At multiple positions with different relative positions
- the means for combining the electrical information and the synthetic electrical information A video recording device B having recording means is provided.
- the optimum relative positional relationship can be determined. It is intended to provide a photoelectric conversion device characterized in that it is controlled so that it can be easily maintained.
- the optimum relative positional relationship can be determined. It is characterized by control so that it can be easily maintained.
- information on each imaging element surface optically imaged in a substantially photoelectric conversion region (photodiode region) and a non-photoelectric conversion region of each pixel is optically formed.
- the relative positional relationship between the image and the image sensor is changed on the same plane as the image sensor surface, and image information optically imaged at a plurality of positions having different relative positional relationships of the same subject is obtained.
- Video information which is electrical information extracted from the solid-state semiconductor imaging device, is recorded in a recording device before or after the synthesis. If recorded before compositing, read out the information from the recording device and compose to reproduce the video information.
- the optimum relative positional relationship is obtained. Is controlled so that is easily maintained.
- a photoelectric conversion device including an optical imaging unit and a solid-state imaging device that converts the formed image into electrical information
- an optically formed image and The positional relationship with the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device, and image information optically formed at a plurality of positions having different relative positional relationships is transmitted from the solid-state imaging device.
- image information optically formed at a plurality of positions having different relative positional relationships is transmitted from the solid-state imaging device. Extracted multiple times as electrical information, in other words, each image
- the method of the present invention means to increase the number of windows without reducing the size of the so-called windows of the light receiving unit which is the photoelectric conversion unit.
- This has the effect of increasing the resolution of the solid-state imaging device, as is clear from the sampling theorem, and the present invention provides a high-resolution optical signal without increasing the cost and the signal-to-noise ratio SZN. It is possible to perform electrical conversion. Also, while maintaining the noise ratio SZN and resolution as before, the size of the imaging device such as a lens, which is a component of the photoelectric device, and the solid-state imaging device can be reduced and the cost can be reduced, and the cost of the photoelectric device itself can be reduced. It is possible to reduce the size.
- the relative position is not necessarily fixed at all within a finite time during which the imaging information is converted into the electrical information in the image sensor at each of the relative positions.
- the above effect can also be obtained.
- This is a model in which the relative position changes continuously with time in a fixed cycle. If the center of gravity of the relative position is different from each other in each time divided in the fixed cycle, the solid-state imaging device Since the position and center of gravity of the image information captured by each pixel in the pixel are different from each other, the obtained electrical information is synthesized and compared with the case where the relative position is fixed to one place. Because it is possible to extract detailed image information It is white.
- the effect of increasing the resolution can also be expected by actually capturing the imaging information during the movement time between a plurality of different positions as image information at a plurality of different relative positions near each other. Therefore, it is possible to use the optical information as a high-resolution photoelectric device while efficiently using the optical information during the movement time without completely fixing the relative positions during the time of capturing the optical information from the subject. .
- the size of the window at the completely fixed position in the above description even if the image information captured at each different relative position slightly overlaps, in other words, the so-called window overlaps slightly. Since the position and center of gravity of the image information are different from each other, the effect of the present invention can be expected.
- the method of the present invention is applicable to an interlaced image sensor and a color image sensor, and is applied to a video camera, an electronic still camera, and the like. It can be applied to one-dimensional line sensors used for faxing, etc., and its application range is wide.
- the photoelectric conversion device when changing the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device on the same plane as the surface of the solid-state semiconductor image pickup device, By detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor imaging device based on electrical information of image information optically imaged at a plurality of positions having different relationships, a device manufacturing stage The alignment accuracy of the relative position at It is easy to assemble without requiring much, and has the effect of automatically adjusting the mechanical displacement of the relative position due to aging of the device.
- the present invention can be expected to have effects such as high resolution, miniaturization, and cost reduction even in a recording device capable of recording and reproducing, such as an electronic still camera and a video camera, in addition to the photoelectric conversion device.
- one recording method of the present invention uses a large area of a recording medium in the conventional recording format to record high-resolution video information, and devises a reading method such as thinning out the reading. It explains that it is possible to use a common recording system with one mat. Therefore, when the recording apparatus in the case of the embodiment of FIG. 24 using the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention, the use of the recording apparatus is not limited to a normal video signal.
- a recording method characterized by sequentially and separately recording in a recording device by providing means for dividing intermittently serial video information at a plurality of sampling positions into a plurality of pieces of video information in front of the recording device is also considered. Therefore, the present invention is highly developable, such as being applied to other applications.
- FIG. 1 is a block diagram of an embodiment of the present invention.
- FIG. 2 is a configuration diagram in an embodiment of the present invention.
- FIG. 3 is a block diagram of another embodiment 2 of the present invention.
- FIG. 4 is a configuration diagram of still another embodiment 3 of the present invention.
- FIG. 5 is a configuration diagram of still another embodiment 4 of the present invention.
- FIG. 6 is a configuration diagram of still another embodiment 5 of the present invention.
- FIG. 7 is a configuration diagram of still another embodiment 6 of the present invention.
- FIGS. 8 (a) and 8 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the first and second embodiments of FIGS. 2 and 3 of the present invention.
- FIG. 4 is a diagram showing a positional relationship between each pixel and a photodiode portion.
- FIG. 9 is a diagram showing the relationship between the synthesized window of FIGS. 8 (a) and 8 (b) and the image 174 formed.
- FIGS. 10 (a) and 10 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the case of the third and fourth embodiments of FIGS. 4 and 5, respectively.
- FIG. 4 is a diagram showing a positional relationship between a pixel and a photodiode portion.
- FIG. 11 is a diagram showing the relationship between the combined window of FIGS. 10 (a) and 10 (b) and the image 174 formed.
- FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) are solid-state imaging devices in the case of the fifth and sixth embodiments of FIGS. 6 and 7 of the present invention.
- FIG. 17 is a view showing the positional relationship between the pixels 174 and 201 to 236 formed on the image 172 and the photodiode unit of each pixel.
- FIG. 13 is a diagram showing the relationship between the four synthesized windows shown in FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) and the image 174 formed.
- FIG. 14 is a block diagram of a block according to still another embodiment of the present invention.
- FIG. 15 is a block diagram of a block according to still another embodiment of the present invention.
- FIG. 16 is a block diagram of a block according to still another embodiment of the present invention.
- FIG. 17 is a block diagram of still another embodiment of the present invention.
- FIG. 18 is a block diagram of still another embodiment of the present invention.
- FIG. 19 is a block diagram of an in-line CCD as a conventional example.
- FIG. 20 is a cross-sectional view of a conventional interline CCD. .
- FIG. 21 is a block diagram of a conventional photoelectric conversion device.
- FIG. 22 is a photoelectric conversion device having a conventional optical imaging means and a solid-state imaging device for converting the formed image into electrical information.
- FIG. 3 is a view showing an image 1 ⁇ 4 formed.
- FIG. 24 is a block diagram of an imaging-recording-reproducing-display system composed of a video recording device A 700, a video reproducing device 701, and a display device 7002 according to an embodiment of the present invention.
- FIG. 5 is a block diagram of an imaging-recording-reproducing-display system composed of video recording devices B and 703, reading means 731 and a display device 72, which is another embodiment of the present invention.
- FIG. 6 is an internal block configuration diagram of the synthesizing means 7 22 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
- FIG. 27 is a block diagram of another embodiment of the synthesizing means 7 23 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
- FIG. 28 is a block diagram of a block according to another embodiment of the present invention.
- FIG. 29 is a block diagram of an embodiment of the present invention shown in FIG. 28, which is a block diagram of the imaging / imaging element relative position detection control means 50 ⁇
- FIG. 30 is a block diagram of still another embodiment of the present invention.
- FIG. 1 is a block diagram showing a photoelectric conversion device according to an embodiment of the present invention.
- the optical information 400 from the subject 350 is converted into optical image information 11 by the optical imaging means 371, and further converted into electrical information 420 by the solid-state imaging device 361. It is taken out.
- the imaging / image sensor relative position change control signal 4300 changes the imaging / image sensor relative position change means 390 to the optical imaging means 371 and the solid-state image sensor 361 By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positions are changed.
- FIG. 28 shows a block diagram of another embodiment of the present invention.
- Optical information from the subject 35 It is converted into optical imaging information 411 by the biological imaging means 371, and is further extracted as electrical information 42 by the solid-state imaging device 361.
- the imaging and imaging element relative position changing means 390 are smaller than the optical imaging means 371 and solid-state imaging element 361 by the imaging and imaging element relative position change control signal 430. By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and at a plurality of positions having different relative positions.
- FIG. 28 is different from FIG. 1 which is a block configuration diagram in the embodiment of the present invention, in that the imaging / imaging element relative position detection control means 500 0 stores the electrical information 420.
- the relative position is detected as an input signal, and an image formation / image pickup device relative position change control signal 4330 is output so as to optimize the relative position displacement amount, and the image formation / image pickup device relative position change means 3 is output.
- FIG. 29 is a block diagram of the embodiment of the present invention shown in FIG. 28, and shows an embodiment of the imaging / imaging element relative position detection control means 50 block.
- the imaging / imaging element relative position change control signal 430 is described as a single control signal, but as shown in the embodiments of the present invention after FIG. 2 to be described later.
- the direction in which the relative position is changed becomes complicated, it is necessary to consider separately the signal for controlling the direction of change and the signal for controlling the amount of displacement for the imaging / relative position change control signal 430 of the image sensor. Is coming.
- the imaging / image sensor relative position change control signal 430 is a signal that changes in both the positive and negative directions with respect to the reference potential, and indicates the direction in which the relative position is changed in positive and negative directions. It will be described as a signal shown. Naturally, the positive / negative repetition frequency matches the imaging / image sensor relative position change frequency.
- the electrical information 420 is input to the electrical information synthesizing means 600, and the imaging and image sensor relative position and direction reference signal output from the imaging and image sensor relative position and direction reference signal generating means 62 are input.
- the signal is controlled and synthesized by the signal No. 4 2 3 to obtain a synthesized electric signal 4 21.
- This electrical information synthesizing means 6 ⁇ 0 will be described in further detail.
- Electrical information 420 extracted at one image formation / image sensor relative position is delayed by a delay element or a storage element to form another image. '' It combines the electrical information 420 extracted at the relative position of the image sensor, and the combined electrical signal 421, which is the output, is extracted at multiple relative positions of the imaging device and the image sensor.
- the obtained electrical information 420 is synthesized so as to be extracted just in the order of the physical imaging position in the image sensor.
- the signal as the electrical information of the actual image formation may be used from the combined electrical signal 421, or another combining means may be used separately from the electrical information 420.
- This synthesizing technology can be realized as an application of a video signal synthesizing technology that is displaced in the vertical direction of scanning lines, which is one of the high image quality technologies currently implemented in televisions and videos. .
- a video signal synthesizing technology that is displaced in the vertical direction of scanning lines, which is one of the high image quality technologies currently implemented in televisions and videos.
- horizontal and vertical synchronization signals are required together with the electrical information 420 from the imaging device, similar to the video signal synthesis technology for television, video, etc. .
- the synthesized electric signal 421 is inputted to the high frequency component detecting means 601, and the higher the high frequency component of the synthesized electric signal 421, the higher the high frequency detection output 422.
- the controller 603 forms an image with the high frequency detection output 422.Image is formed based on the image sensor relative position direction reference signal 423.Image is formed by determining the displacement amount of the image sensor relative position.Image sensor Outputs relative position change control signal 4330.
- the displacement amount becomes appropriate, the composite electric signal 421 has the highest frequency component, and is used as a high-resolution photoelectric conversion device. Function. In other words, the displacement amount may be changed, and the combined electric signal 421 may be automatically adjusted so as to have the highest frequency component.
- This technology is used for auto cameras used in video cameras, etc. It can be realized by a technology similar to what is called a piezo autofocus in the contrast detection method, a so-called passive type contrast technology.
- a piezo auto force method the image sensor is moved by the piezo element, and when the image is focused and the outline of the image is clear, the high-frequency component increases in the video signal, so the component is examined and this is used as the focus voltage. is there.
- the relative positional relationship between the optical imaging and the imaging device is changed on the same plane as the imaging device surface.
- the optical imaging and the imaging are performed. This is a method in which the relative positional relationship with the element is changed in a direction perpendicular to the imaging element surface, that is, in the direction in which the focus changes.
- the direction of change of the relative position and the intended purpose are completely different, but general relative As a method of controlling the positional relationship, it is possible to respond to the conventional technology.
- the present invention is a method of adjusting the displacement of the relative position by using optical information from a subject.
- Such a state of the subject generally appears as a loss of focus even in a so-called passive type and an autofocus method in a contrast detection method, but similarly to the method for solving the problem, the present invention is also applicable.
- the control unit 603 in Fig. 29 a method for setting an appropriate time constant for control, and an appropriate amount of This can be dealt with by a method such as storing the state of the position.
- the relative positional relationship between the optically formed image and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device. It is characterized in that image information optically formed at a plurality of different positions is extracted as electrical information from the solid-state imaging device, and a combination of the plurality of electrical information is used.
- this synthesizing technique is also possible by applying a high-quality technique for television, video, etc., so that the imaging-image sensor relative position detection control means 500 in FIG. Embodiments may consider other methods, but further detailed description is omitted.
- a part of the imaging / relative position detection control means 500 of the electric information synthesizing means 600 and the high-frequency component detecting means 6 ⁇ 1 may be incorporated in the solid-state image sensor 36 1. Possible ⁇
- Imaging ⁇ Blocks of image sensor relative position detection control means 5 ⁇ 0 are common and will not be described.
- the imaging-imaging element relative position changing means 390 which controls the imaging element relative position changing means 390
- the imaging element relative position changing control signal 430 itself is the above-described omitted imaging. The explanation will be made assuming that the block is generated.
- FIG. Figure 2 7 to 7 are more specific embodiments of the embodiment corresponding to FIG. 1 of the present invention.
- the imaging / imaging element relative position changing means 390 is composed of the optical imaging means 37 1 and the solid-state imaging element 36. It is assumed that it is not necessary to move both of them, only one of them is sufficient.
- FIG. 2 is a configuration diagram of an embodiment of the present invention.
- Reference numeral 171 denotes a representative lens as optical imaging means
- reference numeral 172 denotes a solid-state image sensor
- the upper image is 174
- 175 is a component that changes the relative positional relationship between the optically formed image and the solid-state imaging device on the same plane as the surface of the solid-state imaging device.
- 175 is attached to the lower part of the solid-state imaging device of 172, but is schematically shown, and a part is fixed to the solid-state imaging device of 172, and other parts are fixed.
- any element that causes mechanical displacement by an electric signal such as a piezo element may be used.
- the mounting position may be left, right, up, down, or the back, without being limited to the lower portion.
- the L direction indicated by the arrow indicates that the 17 2 solid-state imaging device moves to the left, and the R direction indicated by the arrow indicates that the 1 ⁇ 2 solid-state imaging device moves to the right.
- FIG. 3 is a block diagram of another embodiment 2 of the present invention.
- 17 1 is a representative lens as an optical imaging means
- 17 2 is a solid-state
- the image formed on the solid-state imaging device is 174.
- the difference from FIG. 2 is that in order to change the relative positional relationship between the optically imaged image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor, the difference in FIG. It is not to move the solid-state imaging device, but to move it on the optical imaging device side.
- the moving parts 17 6 are attached to the lower part of the 17 1 lens, but are schematically shown in the same way as in Fig. 2, with a part fixed to the 1 1 lens and other parts fixed. Any material that causes mechanical displacement by an electric signal such as a piezo element may be used.
- FIG. 4 shows still another embodiment 3 of the present invention
- FIG. 2 shows a case where the solid-state image sensor 17 2 is moved left and right while FIG. 4 shows a case where the solid-state image sensor 17 2 is moved up and down.
- Reference numeral 177 denotes a part corresponding to 175 in FIG. U direction is 1
- the solid-state image sensor 72 moves upward, and the D direction indicated by an arrow indicates that the solid-state image sensor 72 moves downward.
- FIG. 5 shows still another embodiment 4 of the present invention
- FIG. 3 shows that the image 17 4 formed on the solid-state image pickup device 17 2 is moved left and right on the optical imaging device side.
- Fig. 5 shows the case of moving up and down.
- Reference numeral 178 denotes a part corresponding to 176 in FIG.
- the lens 17 1 moves upward, and the solid-state image sensor 17 2 moves downward relative to the image 17 4 formed as in the case of Fig. 2.
- the lens 17 1 moves downward, and the lens 17 1 moves relative to the image 17 4 formed in the same way as in FIG. Indicates that the solid-state image sensor moves upward.
- FIG. 6 shows still another embodiment 5 of the present invention, which is an example in which FIGS. 2 and 4 are combined, in which the solid-state imaging device can be moved up, down, left, and right.
- FIG. 7 shows still another embodiment 6 of the present invention, which is an example in which FIG. 3 and FIG. 5 are combined.
- And 172 solid-state imaging devices can be moved up, down, left, and right.
- FIGS. 6 and 7 by combining the examples of FIGS. 2 and 5, or by combining the examples of FIGS. It is also possible to divide into optical imaging means.
- FIG. 8 (a) and FIG. 8 (b) correspond to FIG. 2 and FIG. FIG. 3 is a diagram showing a positional relationship between an image formed on a solid-state image sensor 172 and a photodiode portion of each of pixels 201 to 236 in Examples 1 and 2 in FIG. .
- FIG. 8 (a) shows the case where the solid-state image sensor 172 is displaced to the left in the horizontal direction relative to the image 174 formed on the solid-state image sensor 172
- FIG. 8 (b) The case where the solid-state imaging device 172 is displaced to the right in the horizontal direction relative to the formed image 174 is shown.
- the horizontal displacement of the solid-state imaging device 172 in FIGS. 8A and 8B is 12 pixel pitches.
- FIG. 9 shows the relationship between the combined window of FIGS. 8 (a) and 8 (b) and the image 174 formed. In this case, it is possible to increase the horizontal resolution as is clear from the figure.
- FIGS. 10 (a) and 10 (b) show the solid-state image pickup device 172 in the case of the third and fourth embodiments of FIG. 4 and the fifth group of the present invention, respectively.
- FIG. 18 is a diagram showing a positional relationship between the formed images 174 and 201 to 236 with respect to a photodiode portion.
- FIG. 10 (a) shows the case where the solid-state image sensor 172 is displaced upward in the vertical direction relative to the image 1174 formed on the solid-state image sensor 172
- FIG. ) Shows the case where the solid-state imaging device 172 is displaced downward in the vertical direction relative to the formed image 174.
- FIGS. 10 (a) shows the case where the solid-state image sensor 172 is displaced upward in the vertical direction relative to the image 1174 formed on the solid-state image sensor 172.
- FIG. 11 shows the relationship between the synthesized window of FIGS. 10 (a) and 10 (b) and the image 174 formed. In this case, it is possible to increase the vertical resolution as is evident from the figure.
- FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) show the embodiments 5 and 6 of FIGS. 6 and 7 of the present invention.
- FIG. 18 is a diagram showing a positional relationship between an image 174 formed on a solid-state imaging device 172 and photodiodes 201 to 236 in each case.
- FIG. 12 (a) shows a case where the solid-state image sensor 172 is displaced upward in the vertical direction and leftward in the horizontal direction relative to the image 17 formed on the solid-state image sensor 172.
- First 2 (b) shows the case where the solid-state image sensor 172 is displaced vertically upward and horizontally to the right relative to the image 1174 formed on the solid-state image sensor 172.
- Fig. 12 (c) shows the case where the solid-state image sensor 172 is displaced vertically downward and horizontally to the left relative to the image 174 formed on the solid-state image sensor 172.
- Fig. 12 (d) shows that the solid-state image sensor 172 is displaced vertically downward and horizontally to the right relative to the image 174 formed on the solid-state image sensor 172.
- Fig. 13 shows the four synthesized windows of Fig. 12 (a), Fig. 12 (b), Fig. 12 (c), and Fig. 12 (d).
- the relationship of image 174 is shown. In this case, it is possible to increase the resolution both horizontally and vertically.
- FIG. 14 shows a block diagram of still another embodiment of the present invention.
- the optical information 400 from the subject 350 is converted into optical imaging information 412 by the optical imaging means 372, and the light direction is changed by the imaging position changing means 392 in the optical path.
- the optical imaging information is changed into 4 13, which is further extracted as electrical information 4 20 by the solid-state imaging device 36 1.
- the difference from the block configuration diagram of the embodiment of FIG. 1 of the present invention in FIG. 1 is that the imaging and the imaging device relative position changing means 3 are changed by the imaging and imaging device relative position change control signal 4330 in FIG. While 90 moves the optical imaging means 3 71 itself directly, in FIG.
- FIG. 14 the direction of light of the optical imaging information 4 12 passing through the optical imaging means 37 2 is shown in FIG. Is moved by the imaging position changing means 392 in the optical path to form an image on the solid-state image sensor 361 as optical image information 413 and to extract it as electrical information 420.
- the imaging / imaging element relative position change means 391 moves the solid-state imaging element 361, and the optical imaging information 413 and the solid
- the relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 413 is transferred to the solid-state image sensor 361 at a plurality of positions having different relative positions. It is the same as in the case of FIG. 1 of the present invention in that electrical information is extracted as 42 ° from FIG.
- Specific optical path imaging position As the position changing means 392, there is a method in which an optical mirror is placed in the optical path and the mirror itself is moved by an electric control signal to change the direction of the light, or an object that refracts and transmits light in the optical path is placed in the electric path.
- a method using the properties of light such as reflection, refraction, transmission, etc. such as a method of changing the position of the object using a static signal, and a method of placing an object that changes the direction of light passing by an electric signal in the optical path. It is possible.
- the imaging to move the solid-state imaging device 361, the imaging device relative position changing device 391 is not provided, and only the imaging position changing device 392 in the optical path is used.
- Another embodiment is possible in which the relative positional relationship between 13 and the solid-state imaging device 36 1 is changed on the same plane as the surface of the solid-state imaging device.
- FIG. 15 shows a block diagram of still another embodiment of the present invention. This will be described below in comparison with the case of FIG.
- the optical information 400 from the subject 350 is turned into light 401 by changing the direction of the light by the optical path changing means 390, and then the optical imaging information 4 is obtained by the optical imaging means 372. It is converted to 14 and further extracted as electrical information 42 ⁇ ⁇ ⁇ by the solid-state imaging device 36 1.
- FIG. 15 which has the same operation as the in-optical-path imaging position changing means 392 in FIG. That is, the optical path changing means 390 for changing the direction of the light is located in front of the optical imaging means 372.
- the imaging / imaging element relative position changing means 391 moves the solid-state imaging element 361 by the imaging / imaging element relative position change control signal 4330.
- the relative positional relationship between the optical imaging information 4 14 and the solid-state image sensor 36 1 is changed on the same plane as the solid-state image sensor surface, and the solid-state image sensor 36
- the point that the optical imaging information 4 14 is converted from 1 and extracted as electrical information 4 2 ° is the same as in the case of FIG. 14 of the present invention.
- the specific optical path changing means 390 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG.
- an image is formed by moving the solid-state imaging device 361, and the optical imaging information 4 1 4 is obtained only by the optical path changing device 390 without the imaging device relative position changing device 391.
- Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
- FIG. 16 shows a block diagram of still another embodiment of the present invention.
- the optical information 400 from the subject 350 can be image-formed and the direction of the light can be changed by the optical imaging means 379 with the variable optical path mechanism.
- the optical imaging means with variable optical path mechanism 379 comprises a first optical imaging means 374, an optical path changing means 394, and a second optical imaging means 375.
- the information 4 ⁇ ⁇ is converted into optical imaging information 415 by the first optical imaging means 374, and then the optical direction is changed by the optical path changing means 394 to obtain the optical imaging information.
- the optical path changing means 3 94 is between the two optical imaging means 3 7 4 and 3 75 That is.
- a plurality of lenses are generally used as high-precision optical imaging means, and the optical path changing means 394 is provided between the plurality of lenses.
- the imaging / image sensor relative position change control signal 4330 causes the image / image sensor relative position change means 391 to move the solid-state image sensor 361, and the optical image information 417 and the solid
- the relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 417 is electrically generated by the solid-state image sensor 361 at a plurality of positions having different relative positions.
- the point of conversion and extraction as the target information 420 is the same as in the case of FIGS. 14 and 15 of the present invention.
- the specific optical path changing means 391 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG.
- an image is formed by moving the solid-state image sensor 361, and there is no image sensor relative position changing means 391, and only the optical path changing means 394 4 provides optical image information 4 1 7
- Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
- FIG. 17 shows a block diagram of still another embodiment of the present invention.
- an embodiment of the present invention will be described in comparison with the case of FIGS. 14, 15 and 16.
- Information 40 ° is converted into optical image information 418 by the optical imaging means 372, and is extracted as electrical information 422 by the solid-state imaging device 369 with the variable optical path mechanism.
- the solid-state image pickup device with a variable optical path mechanism 369 is composed of an optical path changing unit 396 controlled by an imaging device and a relative position change control signal 430 and a solid-state image pickup device 365.
- the optical image information 418 is turned into the optical image information 419 by changing the direction of light by an optical path changing means 396 controlled by an electric signal, and is formed on the solid-state imaging device 365. And retrieved as electrical information 42 ⁇ .
- Embodiments of the present invention The difference from the case of FIGS. 14, 15 and 16 is that the light path changing means 3 96 and the conventional solid state image pickup device 365 are integrated to form a solid state image pickup device 36 with a light path variable mechanism. 9 is composed.
- the solid-state imaging device 3669 with an optical path changing mechanism including the optical path changing means 3966 is a mechanical element of the optical path changing means in FIGS. 14, 15 and 16 as another embodiment.
- FIG. 17 is slightly different from the embodiments of the present invention up to FIG. That is, the embodiments up to FIG. 16 provide a means for changing the relative positional relationship between an optically formed image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor.
- the image information optically formed at a plurality of positions having different relative positional relationships was taken out as electrical information from the solid-state imaging device.
- the image is optically formed instead of the relative positional relationship between the image formed optically and the solid-state image pickup device.
- FIG. 18 shows a block diagram of still another embodiment of the present invention.
- the optical information 400 from the subject 350 is converted into optical image information 450 by the optical image forming means 372, and the optical image information 460 is further converted by the light dividing means 460. 5 1 and other optical imaging information 4 5 2.
- the optical imaging information 45 1 and 45 2 are selected by the light switching means 46 1 to become optical imaging information 45 3, which is imaged on the solid-state imaging device 36 1 and electrically connected.
- the information is retrieved as 420.
- the optical imaging means 37 2, the light splitting means 46 ⁇ , and the light switching means 46 1 finally turn on the solid-state image pickup device according to the selection of the optical imaging information 45 1 and 45 2.
- the light switching means 4 61 may be controlled by 0. Further, here, the light splitting means 460 can be easily realized by a so-called half mirror, and the light switching means 461 can be easily realized by a so-called liquid crystal combination. Further, as can be inferred from other embodiments, an embodiment in which the optical imaging means 372 is arranged behind the light switching means 461 is possible.
- a method using an optical fiber in an optical path from a subject a method of dividing an optical path into a plurality of optical paths as shown in FIG.
- a number of embodiments can be considered, such as a method using not only a simple optical lens but also a completely different image forming means utilizing the interference fringe phenomenon of light, but the method of the present invention is all optical.
- the relative positional relationship between the image formed on the solid-state image sensor and the photoelectric conversion region on the solid-state image sensor is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positional relationships are changed. This means that optically formed image information is extracted as electrical information from the solid-state imaging device.
- the photoelectric conversion region and the non-photoelectric conversion region on the solid-state imaging device are one-to-one, and the relative displacement is set to half the repetition pitch of the photoelectric conversion region.
- the moving amount of the relative position does not need to be half of the pitch, and even if the moving amount is other than that, the post-process for synthesizing the electronic information is changed, It is possible to achieve the object of the present invention.
- the optimum value of the relative position is where the resolution becomes the best, and the combined value after combining the read electrical information is used.
- the high-frequency components of electrical information increase most. Focusing on this point, as a method of optimally controlling the relative position in the system of the present invention, the relative position displacement amount is slightly changed, and after the electrical information of the present invention is synthesized. It is also possible to control the relative position while feeding back such that the integrated processing value becomes a peak value while detecting the high-frequency component of the combined electrical information and comparing it with the integrated value.
- the imaging / imaging element relative position change control signal if it is fixed, it can be used as a conventional photoelectric conversion device having a lower resolution than the method of the present invention. is there. Focusing on this point, the conventional photoelectric conversion device is used when the movement of the subject itself is faster than the time required for the double reading and combining processing of the present invention, and the present invention is used when the movement of the subject itself is slower. Switching to use depending on the application, such as use as a high-resolution photoelectric conversion device, can be easily realized. This switching method is not limited to manual switching by the user who decides according to the application, and EDTV is currently developing as TV technology.
- the technology for controlling the scanning method of the TV by judging whether there is a motion of the video from the electrical information of the video such as the motion compensation technology in It is also possible to control and automatically switch the imaging and relative position change control signal of the image pickup device. Furthermore, there are many combinations of switching methods to be used, such as switching only in the horizontal and vertical directions as needed. As described above, the methods of the present invention can be easily realized because the switching is easy, and the development is possible. Is great.
- the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device is changed by a piezo element or the like in a direction perpendicular to the solid-state semiconductor image pickup device surface.
- FIG. 24 is a block diagram of an image-recording-recording-reproducing-display system composed of a video recording device A, 700, a video reproducing device 701, and a display device 702 according to an embodiment of the present invention. ⁇ ⁇
- the video recording device ⁇ ⁇ includes the photoelectric conversion device 705 and the recording device 71 7.
- the electrical information 420 at a plurality of positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different from that of the solid-state semiconductor imaging device is determined by a recording device ⁇ 10 Is entered and recorded.
- the recording device 7100 is a recording device that uses a semiconductor memory or a magnetic medium such as a magnetic disk or a magnetic tape. If it is a recording device that uses a magnetic disk, video recording device A constitutes a so-called electronic still camera that cannot record video, and if it is a recording device that uses magnetic tape, video recording device A can record video. It is possible to construct any kind of video camera.
- the method of this embodiment of the present invention is different from a conventional so-called electronic still camera or video camera in that an image in which recorded electronic information is optically formed and the solid-state semiconductor imaging device are used.
- the electrical information 420 in a plurality of ⁇ ' ⁇ s having different relative positional relationships is recorded before the electrical information 420 is synthesized.
- the information filling density of the recording medium and the recording format specified by the recording device It is possible to record high-resolution video information for the storage capacity limited by the above. If the area of the recording medium is used as many as the number of positions having different positional relations in the conventional recording format, the recording format shared with the conventional format can be improved by devising a reading method such as reading thinning. It can also be a device.
- the video reproducing device 701 comprises a reading means 730 and a synthesizing means ⁇ 2 ⁇ .
- the video information 770 from the recording device 710 in the video recording device A is read by the reading means 730.
- the read electrical signal 7 8 ⁇ corresponding to the electrical information 4 20 at a plurality of positions where the relative positional relationship between the optically formed image and the solid-state semiconductor imaging device is different is obtained by combining means 7 2 At 0, it is synthesized into normal electrical image information 79 °.
- the synthesized ordinary electric video information 790 is visualized by the display device 702.
- Display device 7 ⁇ 2 can be mounted on a normal television.
- the recording device 7 10 is a recording device using a magnetic medium or the like, recording and reading are usually performed with a so-called magnetic head.
- the recording device 7 10 is a semiconductor memory, recording and reading are usually performed by controlling a so-called read-write signal.
- FIG. 25 shows a video recording apparatus B according to another embodiment of the present invention.
- FIG. 3 is a block diagram of an imaging-recording-reproducing-display system composed of 703, reading means 731, and a display device 702. In this case, the difference from the embodiment in FIG.
- the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device is recorded, and the recorded electrical information is read out and synthesized, whereas in FIG. 25, Before recording the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device, a means for combining the electrical information is disposed, and the combined electrical information is recorded.
- the video recording device B includes the photoelectric conversion device 705, the synthesizing means 721, and the recording device 711.
- the electrical information 42 at multiple positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different is obtained by combining means 721.
- a normal video signal 791 which is input to the recording device 711 and recorded.
- the recording device 71 1 can use a conventional recording device.
- the video information 7 71 from the recording device 7 1 1 is read by the reading means 7 3 1, becomes normal electrical video information 8 ⁇ , and is visualized by the display device 7 0 2.
- the extracted electrical signal is required It is necessary to perform the synthesis in accordance with the conditions.
- the synthesis processing technology in the prior art is analog by CCD or the like, and digitally by memory (line memory, field memory). Memory, frame memory, etc.).
- the synthesizing means 720 in FIGS. 24 and 25 are analog by CCD or the like, and digitally by memory (line memory, field memory). Memory, frame memory, etc.).
- FIG. 26 is an internal block diagram of the combining means 722 corresponding to 720 in FIG. 24 and 721 in FIG.
- Input signal 810 and output signal 816 are both analog electric signals.
- the input signal 810 corresponds to 780 in FIG. 26 and 420 in FIG. 25, and the output signal 816 corresponds to 790 in FIG. 26 and 791 in FIG.
- the input signal 810 is delayed by the delay circuit 74 °, and the input signal 810 and the delayed input signal 811 are input to the synthesizing unit 750 to become the synthesized output signal 816.
- the delay time of the delay circuit 74 is matched with the relative position change time between the optically formed image and the solid-state semiconductor image pickup device, the image formed on the image pickup device surface is obtained. It is possible to take out the same composite output signal 8 16 as that obtained by continuously taking out.
- FIG. 27 is an internal block diagram of another embodiment of the synthesizing means 723 corresponding to 720 in FIG. 24 and 721 in FIG. 25, similarly to FIG. 0,
- Output signal 8 15 are the same analog electric as in Fig. 26
- This is a method in which the signal is converted into a digital signal once by an AD converter, signal processing such as delay and synthesis is performed, and finally the signal is converted back into an analog electric signal by a DA converter.
- the input signal 8110 corresponds to 780 in FIG. 24 and 420 in FIG. 25, and the output signal 815 corresponds to 79 ° in FIG. 24 and 791 in FIG.
- Input signal 8 1 0 is AD converter 7
- the signal is converted into a digital signal 812 by 60, and further becomes a delayed digital signal 813 by shift register 741.
- the digital signal 8 12 and the delayed digital signal 8 13 are processed by the synthesizing unit 751 to become a digital synthesized signal 8 14. Further, the digital composite signal 814 is converted into an analog electric output signal 815 by the DA converter 761.
- the combining means in the embodiment shown in FIGS. 26 and 27 are shown as analog electric signals for both the input and output signals.
- FIG. 30 shows an embodiment of a video camera using the method of the present invention when performing electronic zoom processing.
- Optical information 920 from a subject passes through an optical imaging means 900 having a zoom function, and the optical imaging information 921 forms an image on a solid-state imaging device 901.
- the electrical information 923 extracted from the solid-state imaging device 901 is converted to a digital signal 924 by the AD converter 902, and the signal 925 processed by the DSP 903 is DA converted.
- the image is again converted into an analog surface image signal 926 by the unit 9104.
- the external control signals 933 are control signals for shutter speed, zoom magnification, etc., are input to the external input control section 907, and the individual control signals 933 are input to the microcomputer 908. .
- the optical imaging means with a zoom function 9 ⁇ ⁇ is controlled by the microcomputer 9 ⁇ 8, and the zoom magnification and the focus adjustment are controlled by the optical system control signal group 927.
- the imaging device relative position changing means 905 is formed by the imaging and imaging device relative position control signal 93 ° from the microcomputer 908, and the optical imaging device 900 with a zoom function is connected to the solid-state imaging device.
- the relative position of 901 is controlled by the relative position control signal 928.
- the solid-state image sensor scanning control signal group 931 from the microcomputer 908 becomes a scanning control signal 929 by the solid-state image sensor scanning unit 906, and controls the reading scan of the solid-state image sensor 9 Perform The control of the reading scan controls the shutter speed, the electronic zoom control, and the like.
- a general zoom method is to change the magnification of an elephant imaged on a solid-state image sensor by a combination of optical lens groups. It is a method of extracting and expanding a specific area.
- Such image processing can also be processed by expanding and processing a part of the screen inside the digital signal processor DSP on the image signal read from the solid-state image sensor, but here the signal from the solid-state image sensor is read
- the method of controlling the reading scan from the solid-state imaging device scanning section 906 is limited to the center 1--4 screen surrounded by half the pixels of the solid-state imaging device 9001 in both the vertical and horizontal directions. This can be changed by scanning in the vertical and horizontal directions. At this time, pixels are lost between pixels on a screen that is simply zoomed (expanded).
- the image sensor and relative position change means 905 are operated, and the image is synthesized by the DSP 903. It is possible to prevent the resolution from deteriorating by processing.
- a general electronic zoom as a processing method of a vertical and a horizontal missing pixel, the method of the present invention is not used, and an image obtained by averaging the pixel data of an adjacent area as the missing pixel data using a DSP is used.
- a method of processing and inserting interpolation is also possible, but as the zoom magnification increases, the resolution naturally deteriorates. For this reason, the resolution can be prevented from deteriorating by operating the method of the present invention in combination only when the electronic zoom magnification exceeds a certain value. In this case, the operating current can be reduced by using the method of the present invention only under certain conditions.
- the recording apparatus in the embodiment shown in FIG. 24 in the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention to examine the usage thereof, even if the input is a normal video signal, the recording apparatus is temporally difficult.
- By arranging means for dividing serial video information at multiple sampling positions to generate multiple video information at the front of the recording device it is also possible to consider a recording method characterized by recording separately and sequentially in the recording device. it can.
- the present invention converts light from a subject into electrical information.
- a method for increasing the resolution by similarly moving a display unit in a device that displays electrical information is also considered.
Abstract
A photoelectric conversion device, an image recording device and an image recording/reproducing device having low noises and high resolutions. The relative positional relation between an image made optically and the solid-state image pickup device is changed on the plane of the surface of the solid-state image pickup device and information of images made optically are processed at plural positions whose relative positional relations are different from each other.
Description
明細 光電変換装置、 映像記録装置、 及び映像記録再生装置 Description Photoelectric conversion device, video recording device, and video recording / reproducing device
【技術分野】 【Technical field】
本発明は固体撮像素子を有する光電変換装置及び映像 記録装置、 及び映像再生装置に関する。 The present invention relates to a photoelectric conversion device, a video recording device, and a video reproduction device having a solid-state imaging device.
【背景技術】 [Background Art]
従来の光学的レンズ等の光学的結像手段と固体撮像素 子により、 光学的に結像した固体撮像素子上の情報をと りだす光電変換装置での固体撮像素子は、 光電変換と蓄 積の機能をもち一次元または二次元に配列された画素群 と各画素に蓄積された信号電荷を時系列的に順次取り出 す走査機能を持つ回路とを有している。 ここで二次元の 固体撮像素子についてみてみると走査方式で二つに大別 出来る。 一つは撮像管における電子ビーム走査の方法を、 原理的にそのまま集積回路に置き換えたもので M O S等 を用いたもので各画素に順次選択パルスを送りそこに蓄 積された信号電荷を読みだしていく X Yァ ドレス走査方 式であり もうひとつは自己走査 (転送) 機能を持つ C C D等を用いたもので各画素に蓄積された信号電荷を一 方向に順次転送しながら、 最後に信号として取り出して いく方法で電荷転送方式といわれている。 The solid-state imaging device in the photoelectric conversion device, which obtains information on the solid-state imaging device optically imaged by the conventional optical imaging means such as an optical lens and the solid-state imaging device, performs photoelectric conversion and accumulation. It has a one-dimensional or two-dimensional array of pixels and a circuit having a scanning function for sequentially taking out signal charges accumulated in each pixel in a time-series manner. Here, looking at the two-dimensional solid-state image sensor, it can be roughly divided into two by the scanning method. One is that the method of electron beam scanning in the image pickup tube is replaced in principle with an integrated circuit as it is, using MOS, etc., in which a selection pulse is sequentially sent to each pixel and the signal charge stored there is read. The other is using a CCD or the like that has a self-scanning (transfer) function. The signal charges accumulated in each pixel are sequentially transferred in one direction, and finally extracted as signals. This method is called the charge transfer method.
また、 M〇 S、 C C D 等を組み合わせた方法も発表
され実現されてきているが、 いずれの場合も画像情報は 水平方向に走査され時間的に直列に出力され、 次に一水 平走査が終了すると垂直方向に一画素分下の水平方向の 走査に移るというように、 二次元の画像情報を T Vの映 像信号のように水平走査の繰り返しにより取り出してい る。 Also announced a method combining M〇S, CCD, etc. In either case, the image information is scanned in the horizontal direction and output serially in time.Next, when the horizontal scanning is completed, the horizontal scanning is performed one pixel down in the vertical direction. As it moves, two-dimensional image information is extracted by repeating horizontal scanning like a TV video signal.
この取り出されたアナログ画素情報を、 ノィズ削減や 垂直解像度をあげるため等、 アナログまたはデジタル的 に異なる画素情報どうしで合成処理する方法はよく知ら れているが、 従来の場合はいずれも光学的に結像した固 体撮像素子面上の情報を、 光学的結像と該固体撮像素子 との相対的位置関係を固定したまま取り出しており、 本 発明のように光学的結像と該固体撮像素子との相対的位 置関係を、 該固体撮像素子面と同一平面上で変化させ、 相対位置関係が異なる複数の位置で光学的に結像した像 情報を該固.体撮像素子から電気的情報として取り出す方 法は例が無かった。 It is well known to combine the extracted analog pixel information with analog or digitally different pixel information, such as to reduce noise or increase vertical resolution. The information on the imaged solid-state imaging device surface is extracted while the relative positional relationship between the optical imaging and the solid-state imaging device is fixed. As in the present invention, the optical imaging and the solid-state imaging device Is changed on the same plane as the surface of the solid-state imaging device, and image information optically imaged at a plurality of positions having different relative positional relationships is converted into electrical information from the solid-state imaging device. There was no example of how to take it out.
ここで注意しなければならないのは固体撮像素子上に 二次元的に各画素が配置されているといっても、 下記に 述べるような要因により実質的に光電変換に寄与するホ トダイォ一ドの面積は画素領域すべてではない点である。 一般的に M O S形、 C C D形いずれの場合も固体撮像素 子特有の問題をかかえており、 その代表的なものは偽信 号の発生でありブルーミングとスミアである。 ブルーミ ングとは、 強い光の入射によって光電変換部が飽和し、
そこから溢れ出た過剰電荷に基づく偽信号であり、 走査 部分にあふれた成分は縦縞状にあらわれることが多いが、 周囲ににじみ出る成分もある。 またスミアはこれ以外の 経路を通じて、 所定の光電変換部から他へ、 電気的、 光 学的に漏れた成分に基づく もので、 やはり縦 (あるいは 横) 縞状に生じるものが多いが、 輪郭がぼけて周囲に広 がる成分もあり、 弱光のレベルから生じているが強い光 で目立つようになる。 このため各画素に蓄えられた信号 電荷が隣に拡散していかないようにチャンネルス トツバ 領域を設けたりする対策がとられており実質的に光電変 換する部分以外の平面的領域が必要である。 また C C D の場合は転送路が各画素の隣に必要であり、 M 0 Sの場 合は各画素にスイ ッチング用 トランジスタが必要であり、 いづれの場合も実質的に光電変換するホトダイオー ド部 分以外の平面的領域を必要と し、 一画素分の面積すベて を光電変換に使用しているわけではなく、 これが光電変 換効率を落とす要因となっている。 It should be noted here that even though pixels are arranged two-dimensionally on a solid-state image sensor, photodiodes that substantially contribute to photoelectric conversion due to the factors described below are considered. The area is not the entire pixel area. In general, both the MOS type and the CCD type have problems specific to solid-state imaging devices. The typical ones are the generation of false signals, such as blooming and smear. Blooming means that the photoelectric converter saturates when strong light enters, This is a false signal based on the excess charge that has overflowed. The components that overflow into the scanned area often appear as vertical stripes, but some also ooze out to the surroundings. Smear is also caused by electrical and optical leakage components from a given photoelectric conversion part to other parts through other routes. In many cases, smears also occur in vertical (or horizontal) stripes. Some components are blurred and spread around, resulting from low light levels but becoming noticeable with strong light. For this reason, measures have been taken to provide a channel stop region so that the signal charges stored in each pixel do not diffuse to the neighbors, and a planar region other than the portion that substantially performs photoelectric conversion is required. . In the case of CCD, a transfer path is required next to each pixel, and in the case of M0S, a switching transistor is required for each pixel. Since a planar area other than the above is required, not all the area of one pixel is used for photoelectric conversion, and this is a factor that lowers the photoelectric conversion efficiency.
近年画像品質が重要視されてきており、 このため画像 情報の分解能を上げよう と した場合、 従来の方法では絶 対画素数を増やす必要があり、 各画素の面積を同じとす れば固体撮像素子のサイズが大き く なり製造上の歩留ま りも悪く なる。 また固体撮像素子のサイズが大きく なる と光学的レンズ系も大き く なつてしまうという欠点があ つた。 また各画素自体を微細化しよう とした場合は、 も ともと上記の説明で述べたように光電変換効率が良く な
いうえに微細化により光電変換出力は更に弱くなり信号 とノイズとの比率いわゆる 比は悪化する。 また画 素の微細化により固体撮像素子のサイズが同一であって も製造上の歩留まりは悪化する。 このように高解像度を めざす方向はコス トアップ及び信号とノイズとの比 S/ Nの悪化の方向と一致する等、 多くの困難をかかえてい る。 MO S型, C C D型とも各種の方式が実現されてき ているが、 代表的な従来例と して第 1 9図にインタライ ン型 C C Dの構成図をしめす。 簡単なモデルと して画素 が 6 X 6の計 3 6個で説明する。 1 0 1から 1 36の斜 線部分は感光部で、 14 1から 146は垂直 C C Dであ る。 147は水平 C C Dで 148は出力の増幅器である。 第 2 0図はインタライン型 C C Dの断面構造図であり、 1 5 1は基板表面に形成された N +拡散層で上部からの 入射光 1 58に反応するホトダイオード部であり、 1 5 2は P型拡散層、 1 5 3は N—拡散層で垂直 C C Dであ る。 1 54、 1 5 5は P +拡散層でチャンネルス トツバ である。 1 5 6の斜線部は酸化シリコンで絶縁体であ る。 1 5 7はアルミシール ドである。 第 2 0図で明白な ように二次元 C C Dでの固体撮像素子面には水平方向に ホトダイォード以外の非光電変換領域が存在しており、 同様に垂直方向の画素間にも非光電変換領域が存在して いる。 In recent years, the importance of image quality has been emphasized.For this reason, when trying to increase the resolution of image information, it is necessary to increase the absolute number of pixels in the conventional method, and if the area of each pixel is the same, solid-state imaging As the size of the device increases, the production yield also deteriorates. Another drawback is that as the size of the solid-state imaging device increases, the size of the optical lens system also increases. If each pixel itself is to be miniaturized, the photoelectric conversion efficiency is not high as originally described in the above description. In addition, the miniaturization further weakens the photoelectric conversion output, and the signal-to-noise ratio deteriorates. In addition, even if the size of the solid-state imaging device is the same due to the miniaturization of the pixel, the production yield is deteriorated. The direction to achieve high resolution in this way has many difficulties, such as increasing the cost and deteriorating the signal-to-noise ratio S / N. Various methods have been realized for both the MOS type and the CCD type. Fig. 19 shows the configuration of an interline type CCD as a typical conventional example. A simple model will be described with a total of 36 pixels, 6 x 6 pixels. The shaded portions 101 to 136 are photosensitive portions, and 141 to 146 are vertical CCDs. 147 is a horizontal CCD and 148 is an output amplifier. FIG. 20 is a cross-sectional structure diagram of the interline CCD, and numeral 151 denotes an N + diffusion layer formed on the substrate surface, which is a photodiode portion which responds to incident light 158 from above, and numeral 152 is P-type diffusion layer, 153 is an N-diffusion layer, which is a vertical CCD. Reference numerals 154 and 155 denote P + diffusion layers, which are channel stops. The shaded area of 156 is silicon oxide, which is an insulator. 157 is an aluminum shield. As is clear from FIG. 20, there is a non-photoelectric conversion region other than the photodiode in the horizontal direction on the solid-state image sensor surface of the two-dimensional CCD, and a non-photoelectric conversion region similarly exists between pixels in the vertical direction. Existing.
第 2 1図に従来の光電変換装置で、 光の情報を電気的 情報に変換するブロック構成図を示す。 被写体 35 0か
らの光学的情報 4 0 0が光学的結像手段 3 7 0により光 学的結像情報 4 1 0に変換され更に固体撮像素子 3 6 0 により電気的情報 4 2 0 と してと りだされる。 更に第 2 2図に具体的な従来での光学的結像手段と該結像した像 を電気的情報に変換する固体撮像素子とを有する光電変 換装置をしめす。 1 7 1は光学的結像手段と しての代表 的なレンズである。 1 7 2は固体撮像素子で被写体 1 Ί 3の固体撮像素子上の結像を 1 7 4でしめす。 第 2 3図 は 1 7 2の固体撮像素子上で結像した像 1 7 4をしめす。 2 0 1から 2 3 6は各画素のホトダイオー ド部であり前 述のとおりこのホ トダイォー ド部のみが光電変換部であ りその他の部分は非光電変換領域である。 このためホ ト ダイォー ド部分以外では被写体の像が結像していても電 気的に像は検出できない。 言い替えれば光学的結像装置 の分解能がいく ら高くても実際に電気的に取り出すこと が出来る情報は 2 0 1から 2 3 6のホ トダイォード部で 示される 3 6個のいわゆる窓から見える部分のみである。 FIG. 21 shows a block diagram of a conventional photoelectric conversion device that converts light information into electrical information. Subject 35 0 The optical information 400 is converted into optical imaging information 410 by the optical imaging means 370, and further obtained as electrical information 420 by the solid-state imaging device 360. Is done. Further, FIG. 22 shows a specific conventional photoelectric conversion device and a photoelectric conversion device having a solid-state image pickup device for converting the formed image into electrical information. Reference numeral 171 denotes a typical lens as an optical imaging means. Reference numeral 172 denotes a solid-state image sensor. FIG. 23 shows an image 17 4 formed on the solid-state image sensor 17 2. Reference numerals 201 to 236 denote photodiode portions of each pixel. As described above, only this photodiode portion is a photoelectric conversion portion, and the other portions are non-photoelectric conversion regions. For this reason, even if an image of the subject is formed outside the photo diode portion, the image cannot be detected electrically. In other words, no matter how high the resolution of the optical imaging device is, the information that can be actually electrically extracted is only the part visible from the so-called windows indicated by the photodiodes 201 to 236. It is.
公知の例であるため、 動作の詳細な説明は省略するが、 2 3イ ンチ光学系の C C Dで 2 5万画素のもので 1画 素ピッチが水平方向に 1 8 ミクロンであり この 1 8 ミク ロンのなかにホ トダイオー ドと T G ( トランスファゲ一 ト) と垂直 C C Dがはいっている。 最近の 1 Z 2イ ンチ 光学系の 4 0万画素の C C Dでは、 1画素ピッチが約 8. 5 ミクロンである。 また入射光が利用されるホ トダイォ ード部の開口部は 2 5から 3 0パーセン トであり、 光電
変換効率が良くないうえに微細化により光電変換出力は 更に弱くなり信号とノイズとの比率いわゆる S Z N比は 悪化してしまう。 ここでは従来例と して C C D型で説明 したが、 M O S型の場合も同様の問題点をもっている。 Since this is a well-known example, the detailed description of the operation is omitted, but the CCD of 23 inch optical system with 250 thousand pixels has a pixel pitch of 18 microns in the horizontal direction and this 18 Inside, a photodiode, a TG (transfer gate) and a vertical CCD are included. A recent 1Z2 inch optical CCD with 400,000 pixels has a pixel pitch of about 8.5 microns. The opening of the photodiode where the incident light is used is 25 to 30%, The conversion efficiency is not good, and the miniaturization makes the photoelectric conversion output even weaker, and the signal-to-noise ratio, the so-called SZN ratio, gets worse. Here, the CCD type was explained as a conventional example, but the MOS type also has the same problem.
【発明の開示】 DISCLOSURE OF THE INVENTION
そこで本発明は、 コス トアツプ及び信号とノイズとの 比 S Z Nの悪化させることなしに、 高解像度な光電変換 装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a high-resolution photoelectric conversion device without increasing the cost and the signal-to-noise ratio SZN.
更に該光電変換装置からの電気的映像情報を記録及び 再生する装置を提供することを目的とする。 It is another object of the present invention to provide an apparatus for recording and reproducing electric video information from the photoelectric conversion device.
本発明は光学的結像手段と該結像した像を電気的情報 に変換する固体撮像素子とを有する光電変換装置におい. て、 光学的に結像される像と該固体撮像素子との相対位 置関係を、 該固体撮像素子面と同一平面上で変化きせる 手段を有し該相対位置関係が異なる複数の位置で、 光学 的に結像した像情報を該固体撮像素子から電気的情報と して取り出す手段を有し、 取り出した上記電気的情報を 加工することにより低ノィズでかつ高分解能の光電変換 装置を提供し、 また該光電変換装置からの該相対位置が 異なる複数の位置での該電気的情報を記録する映像記録 装置 Aを提供し、 また該映像記録装置に記録された該電 気的情報を読みだし合成する映像再生装置を提供し、 更 に該光電変換装置からの該相対位置が異なる複数の位置 での該電気的情報を合成する手段と該合成電気的情報を
記録する手段をもつ映像記録装置 Bを提供するものであ る。 The present invention relates to a photoelectric conversion device having an optical imaging means and a solid-state imaging device for converting the formed image into electrical information, wherein a relative relationship between an optically formed image and the solid-state imaging device is provided. Means for changing the positional relationship on the same plane as the surface of the solid-state imaging device, and image information optically imaged at a plurality of positions having different relative positional relationships with electrical information from the solid-state imaging device. A low-noise, high-resolution photoelectric conversion device by processing the extracted electrical information; and providing a plurality of positions at different relative positions from the photoelectric conversion device. A video recording device for recording the electrical information; and a video playback device for reading and synthesizing the electrical information recorded in the video recording device. At multiple positions with different relative positions The means for combining the electrical information and the synthetic electrical information A video recording device B having recording means is provided.
また該固体半導体撮像素子から取り出した電気的情報 により、 該光学的結像と該固体半導体撮像素子との相対 的位置関係を検出し制御する手段を有することにより最 適な該相対的位置関係を容易に維持できるよう制御する ことを特徴とする光電変換装置を提供するものである。 本発明の光学的に結像される像と該固体撮像素子との 相対位置関係を、 該固体撮像素子面と同一平面上で変化 させる手段を有し該相対位置関係が異なる複数の位置で、 光学的に結像した像情報を該固体撮像素子から電気的情 報として取り出し、 複数の電気的情報を合成加工するこ とを特徴としまた該固体半導体撮像素子から取り出した 電気的情報を、 合成前に映像情報と してメモリ、 または 磁気ディ スク、 磁気テープ等の磁気媒体等を使用する記 録装置に記録し、 次に記録された情報を読みだし後合成 し再生すること、 あるいは該固体半導体撮像素子から取 り出した電気的情報を、 合成後記録装置に映像情報と し て記録し、 また記録された情報を読みだすことを特徴と する。 Further, by providing means for detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor image sensor based on the electrical information extracted from the solid-state semiconductor image sensor, the optimum relative positional relationship can be determined. It is intended to provide a photoelectric conversion device characterized in that it is controlled so that it can be easily maintained. Means for changing the relative positional relationship between the optically imaged image of the present invention and the solid-state imaging device on the same plane as the solid-state imaging device surface, at a plurality of positions having different relative positional relationships; It is characterized in that optically imaged image information is extracted as electrical information from the solid-state imaging device, and a plurality of pieces of electrical information are synthesized and processed, and the electrical information extracted from the solid-state semiconductor imaging device is synthesized. Before recording on a recording device using a memory or a magnetic medium such as a magnetic disk or a magnetic tape as video information, and then reading out the recorded information and synthesizing and reproducing it, or It is characterized in that electrical information extracted from a semiconductor imaging device is recorded as video information in a recording device after synthesis, and the recorded information is read out.
また該固体半導体撮像素子から取り出した電気的情報 により、 該光学的結像と該固体半導体撮像素子との相対 的位置関係を検出し制御する手段を有することにより最 適な該相対的位置関係を容易に維持できるよう制御する ことを特徴とする。
本発明の上記の構成によれば、 各画素の実質的に光電 変換する領域 (ホトダイオード領域) と非光電変換領域 とに光学的に結像したおのおのの撮像素子面上の情報を、 光学的結像と該撮像素子との相対的位置関係を該撮像素 子面と同一面上で変化させ、 同一の被写体の相対位置関 係が異なる複数の位置で、 光学的に結像した像情報を該 固体撮像素子から電気的情報として取り出し、 複数の電 気的情報を合成加工することにより従来不可能であった 非光電変換領域に光学的に結像した撮像素子面上の情報 をも取り出すことを可能とする。 該固体半導体撮像素 子から取り出した電気的情報である映像情報を、 合成前 または合成後に記録装置に記録する。 合成前に記録され た場合は記録装置から情報を読みだし後、 合成し映像情 報を再生する。 Further, by providing means for detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor image sensor based on the electrical information extracted from the solid-state semiconductor image sensor, the optimum relative positional relationship can be determined. It is characterized by control so that it can be easily maintained. According to the above configuration of the present invention, information on each imaging element surface optically imaged in a substantially photoelectric conversion region (photodiode region) and a non-photoelectric conversion region of each pixel is optically formed. The relative positional relationship between the image and the image sensor is changed on the same plane as the image sensor surface, and image information optically imaged at a plurality of positions having different relative positional relationships of the same subject is obtained. By extracting electrical information from the solid-state imaging device and combining and processing multiple pieces of electrical information, it is also possible to extract information on the imaging device surface optically focused on the non-photoelectric conversion area, which was previously impossible. Make it possible. Video information, which is electrical information extracted from the solid-state semiconductor imaging device, is recorded in a recording device before or after the synthesis. If recorded before compositing, read out the information from the recording device and compose to reproduce the video information.
また該固体半導体撮像素子から取り出した電気的情報 .により、 該光学的結像と該固体半導体撮像素子との相対 的位置関係を検出し制御する手段を有することにより最 適な該相対的位置関係を容易に維持できるよう制御する。 Further, by providing means for detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor image sensor based on the electrical information extracted from the solid-state semiconductor image sensor, the optimum relative positional relationship is obtained. Is controlled so that is easily maintained.
以上述べたように本発明によれば、 光学的結像手段と 該結像した像を電気的情報に変換する固体撮像素子とを 有する光電変換装置において、 光学的に結像される像と 該固体撮像素子との栢対位置関係を、 該固体撮像素子面 と同一平面上で変化させ、 該相対位置関係が異なる複数 の位置で、 光学的に結像した像情報を該固体撮像素子か ら電気的情報として複数回取り出す、 いいかえれば各画
素の実質的に光電変換する有効領域を複数回使用するこ とにより、 従来不可能であった非光電変換領域に光学的 に結像した撮像素子面上の情報をも取り出すことができ る。 更に別の言い方をすれば本発明の方法は光電変換部 である受光部のいわゆる窓の大きさを小さくすることな しに、 窓の数を増やすことを意味する。 これはサンプリ ング定理からも明かなように固体撮像素子の解像度をあ げる効果を有し、 本発明はコス トアップ及び信号とノィ ズとの比 S Z Nの悪化させることなしに、 高解像度な光 電変換をすることが可能である。 またノイズとの比 S Z Nと解像度を従来と同様に維持したまま、 光電装置の部 品であるレンズ等の結像装置、 固体撮像素子等を小型化、 コス トダウンでき更に光電装置自体をコス トダウン、 小 型化することが可能である。 As described above, according to the present invention, in a photoelectric conversion device including an optical imaging unit and a solid-state imaging device that converts the formed image into electrical information, an optically formed image and The positional relationship with the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device, and image information optically formed at a plurality of positions having different relative positional relationships is transmitted from the solid-state imaging device. Extracted multiple times as electrical information, in other words, each image By using the effective region for substantially photoelectric conversion of the element a plurality of times, information on the imaging element surface optically imaged in the non-photoelectric conversion region, which has been impossible in the past, can be extracted. In other words, the method of the present invention means to increase the number of windows without reducing the size of the so-called windows of the light receiving unit which is the photoelectric conversion unit. This has the effect of increasing the resolution of the solid-state imaging device, as is clear from the sampling theorem, and the present invention provides a high-resolution optical signal without increasing the cost and the signal-to-noise ratio SZN. It is possible to perform electrical conversion. Also, while maintaining the noise ratio SZN and resolution as before, the size of the imaging device such as a lens, which is a component of the photoelectric device, and the solid-state imaging device can be reduced and the cost can be reduced, and the cost of the photoelectric device itself can be reduced. It is possible to reduce the size.
. 本発明の方法は個々の該相対位置で該結像情報を固体 . 撮像素子内で該電気的情報に変換している有限時間内に · おいて該相対位置が必ずしも全く固定されていなくても 上記効果を得ることが可能である。 これは該相対位置が 一定の周期で時間とともに連続的に変化しているモデル で、 該一定周期内で時間分割された各々の時間内で該相 対位置の重心が互いに異なれば、 固体撮像素子内の各画 素に取り込まれる像情報の位置重心が互いに異なってく るため、 各々得られた電気的情報を合成処理することに より、 該相対位置を一箇所に固定した場合と比較して更 に細かい像情報を取り出すことが可能であることから明
白である。 本発明の方法で実際に複数の異なる位置間で の移動時間中の結像情報も、 各々近傍の複数の異なる相 対位置の像情報として取り込むことで解像度をあげる効 果が期待できる。 このため被写体からの光情報を取り込 む時間中に該相対位置を完全に各々固定しないで、 移動 時間中での光情報も効率よく使いながら高解像度な光電 装置として使用することも可能である。 同様に考えれば、 前記の説明での完全に固定された位置でのいわゆる窓の 大きさについても、 各異なる相対位置で取り込まれる像 情報が少し重なる状態、 言い替えればいわゆる窓が少し 重なる状態でも結像情報の位置重心が互いに異なってく るため本発明の効果は期待できる。 In the method of the present invention, the relative position is not necessarily fixed at all within a finite time during which the imaging information is converted into the electrical information in the image sensor at each of the relative positions. The above effect can also be obtained. This is a model in which the relative position changes continuously with time in a fixed cycle. If the center of gravity of the relative position is different from each other in each time divided in the fixed cycle, the solid-state imaging device Since the position and center of gravity of the image information captured by each pixel in the pixel are different from each other, the obtained electrical information is synthesized and compared with the case where the relative position is fixed to one place. Because it is possible to extract detailed image information It is white. With the method of the present invention, the effect of increasing the resolution can also be expected by actually capturing the imaging information during the movement time between a plurality of different positions as image information at a plurality of different relative positions near each other. Therefore, it is possible to use the optical information as a high-resolution photoelectric device while efficiently using the optical information during the movement time without completely fixing the relative positions during the time of capturing the optical information from the subject. . Similarly, regarding the size of the window at the completely fixed position in the above description, even if the image information captured at each different relative position slightly overlaps, in other words, the so-called window overlaps slightly. Since the position and center of gravity of the image information are different from each other, the effect of the present invention can be expected.
また、 実施例では二次元ノンインターレース方式のモ ノクロ撮像素子で説明したが本発明の方法はィンターレ ース方式の摄像素子でも、 カラー撮像素子でも可能であ りビデオカメラ、 電子スチルカメラ等に応用でき、 更に ファクス等に使用される一次元ラインセンサ一でも応用 可能であり応用範囲は広い。 Further, in the embodiments, the description has been made with respect to the two-dimensional non-interlaced monochromatic image sensor. However, the method of the present invention is applicable to an interlaced image sensor and a color image sensor, and is applied to a video camera, an electronic still camera, and the like. It can be applied to one-dimensional line sensors used for faxing, etc., and its application range is wide.
また本発明の光電変換装置は、 光学的に結像される像 と該固体半導体撮像素子との相対位置関係を該固体半導 体撮像素子面と同一平面上で変化させる場合に、 該相対 位置関係が異なる複数の位置で光学的に結像した像情報 の電気的情報により、 該光学的結像と該固体半導体撮像 素子との相対的位置関係を検出し制御することによって、 装置の製造段階での該相対位置の合わせ込み精度をそれ
ほど要求せず容易に組立可能であり、 かつ装置の経年変 化による機械的該相対位置のずれを自動で調整できると いう効果を有する。 Further, the photoelectric conversion device according to the present invention, when changing the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device on the same plane as the surface of the solid-state semiconductor image pickup device, By detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor imaging device based on electrical information of image information optically imaged at a plurality of positions having different relationships, a device manufacturing stage The alignment accuracy of the relative position at It is easy to assemble without requiring much, and has the effect of automatically adjusting the mechanical displacement of the relative position due to aging of the device.
また本発明は、 光電変換装置だけでなぐ、 電子スチル カメラ、 ビデオカメラ等の録画再生可能な記録装置にた いしても、 高解像度、 小型化、 コス トダウン等の効果を 期待できる。 In addition, the present invention can be expected to have effects such as high resolution, miniaturization, and cost reduction even in a recording device capable of recording and reproducing, such as an electronic still camera and a video camera, in addition to the photoelectric conversion device.
また本発明のひとつの記録方式は高解像度な映像情報 を記録するために、 従来の記録フォーマッ トのまま、 記 録媒体の領域を多く使い、 読み取り間引き等の読み取り 方法を工夫することにより従来フォ一マツ トと共用の記 録方式とすることも可能であることを説明している。 こ のため本発明の方法での実施例第 2 4図の場合での記録 装置について、 本発明の光電変換装置と切り離して使用 方法を検討してみると、 入力が通常の映像信号でも、 時 間的に直列な映像情報を複数のサンプリング位置で分割 し複数の映像情報とする手段を記録装置の前段におく こ とにより、 記録装置に別々に順次記録することを特徴と する記録方式も考えることができ、 本発明は他に応用す る等発展性も高い。 In addition, one recording method of the present invention uses a large area of a recording medium in the conventional recording format to record high-resolution video information, and devises a reading method such as thinning out the reading. It explains that it is possible to use a common recording system with one mat. Therefore, when the recording apparatus in the case of the embodiment of FIG. 24 using the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention, the use of the recording apparatus is not limited to a normal video signal. A recording method characterized by sequentially and separately recording in a recording device by providing means for dividing intermittently serial video information at a plurality of sampling positions into a plurality of pieces of video information in front of the recording device is also considered. Therefore, the present invention is highly developable, such as being applied to other applications.
【図面の簡単な説明】 [Brief description of the drawings]
第 1図は本発明の実施例におけるブロック構成図。 FIG. 1 is a block diagram of an embodiment of the present invention.
第 2図は本発明の実施例における構成図。 FIG. 2 is a configuration diagram in an embodiment of the present invention.
第 3図は本発明の別の実施例 2での構成図。
第 4図は本発明の更に別の実施例 3での構成図。 FIG. 3 is a block diagram of another embodiment 2 of the present invention. FIG. 4 is a configuration diagram of still another embodiment 3 of the present invention.
第 5図は本発明の更に別の実施例 4での構成図。 FIG. 5 is a configuration diagram of still another embodiment 4 of the present invention.
第 6図は本発明の更に別の実施例 5での構成図。 FIG. 6 is a configuration diagram of still another embodiment 5 of the present invention.
第 7図は本発明の更に別の実施例 6での構成図。 FIG. 7 is a configuration diagram of still another embodiment 6 of the present invention.
第 8図 (a)、 第 8図 ( b ) は本発明の第 2図、 第 3図 の実施例 1、 2の場合の固体撮像素子 172上に結像し た像 1 74と 201から 236の各画素のホトダイォー ド部との位置関係図。 FIGS. 8 (a) and 8 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the first and second embodiments of FIGS. 2 and 3 of the present invention. FIG. 4 is a diagram showing a positional relationship between each pixel and a photodiode portion.
第 9図は第 8図 ( a ) と第 8図 ( b ) の両者の合成され た窓と、 結像された像 174の関係図。 FIG. 9 is a diagram showing the relationship between the synthesized window of FIGS. 8 (a) and 8 (b) and the image 174 formed.
第 10図 (a )、 第 10図 ( b ) は本発明の第 4図、 第 5図の実施例 3、 4の場合の固体撮像素子 172上に結 像した像 174と 201から 236の各画素のホトダイ ォード部との位置関係を示す図。 FIGS. 10 (a) and 10 (b) show the images 174 and 201 to 236 formed on the solid-state image sensor 172 in the case of the third and fourth embodiments of FIGS. 4 and 5, respectively. FIG. 4 is a diagram showing a positional relationship between a pixel and a photodiode portion.
第 11図は第 10図 (a) と第 10図 (b ) の両者の合 成された窓と、 結像された像 174の関係図。 FIG. 11 is a diagram showing the relationship between the combined window of FIGS. 10 (a) and 10 (b) and the image 174 formed.
第 12図 (a)、 第 12図 (b)、 第 12図 ( c ) 、 第 12図 ( d) は本発明の第 6図、 第 7図の実施例 5、 6 の場合の固体撮像素子 172上に結像した像 1 74と 2 01から 236の各画素のホトダイオード部との位置関 係を示す図。 FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) are solid-state imaging devices in the case of the fifth and sixth embodiments of FIGS. 6 and 7 of the present invention. FIG. 17 is a view showing the positional relationship between the pixels 174 and 201 to 236 formed on the image 172 and the photodiode unit of each pixel.
第 13図は第 12図 (a )、 第 12図 (b ) 、 第 12 ( c ) 図、 第 12図 ( d ) の 4つの合成された窓と、 結像 された像 174の関係図。 FIG. 13 is a diagram showing the relationship between the four synthesized windows shown in FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) and the image 174 formed.
第 14図は本発明の更に別の実施例でのプロック構成図
第 1 5図は本発明の更に別の実施例でのプロック構成図 第 1 6図は本発明の更に別の実施例でのプロック構成図 第 1 7図は本発明の更に別の実施例でのプロック構成図 第 1 8図は本発明の更に別の実施例でのブロック構成図 第 1 9図は従来例と してイン夕ライ ン型 C C Dの構成図。 第 2 0図は従来例でのィンタライ ン型 C C Dの断面構造 図。 . FIG. 14 is a block diagram of a block according to still another embodiment of the present invention. FIG. 15 is a block diagram of a block according to still another embodiment of the present invention. FIG. 16 is a block diagram of a block according to still another embodiment of the present invention. FIG. 17 is a block diagram of still another embodiment of the present invention. FIG. 18 is a block diagram of still another embodiment of the present invention. FIG. 19 is a block diagram of an in-line CCD as a conventional example. FIG. 20 is a cross-sectional view of a conventional interline CCD. .
第 2 1図は従来の光電変換装置でのブロック構成図。 FIG. 21 is a block diagram of a conventional photoelectric conversion device.
第 2 2図は従来での光学的結像手段と該結像した像を電 気的情報に変換する固体撮像素子とを有する光電変換装 第 2 3図は 1 7 2の固体撮像素子上で結像した像 1 Ί 4 をしめす図。 FIG. 22 is a photoelectric conversion device having a conventional optical imaging means and a solid-state imaging device for converting the formed image into electrical information. FIG. 3 is a view showing an image 1Ί4 formed.
第 2 4図は本発明の実施例である映像記録装置 A、 7 0 0と映像再生装置 7 0 1 と表示装置 7 02で構成される 撮像一記録一再生一表示システムのブロック構成図 第 2 5図は本発明の別の一実施例である映像記録装置 B、 70 3 と読み取り手段 7 3 1 と表示装置 7 0 2で構成さ れる撮像一記録一再生一表示システムのブロック構成図 第 2 6図は第 2 4図の 7 2 0、 第 2 5図の 7 2 1に対応 する合成手段 7 2 2の内部ブロック構成図。 FIG. 24 is a block diagram of an imaging-recording-reproducing-display system composed of a video recording device A 700, a video reproducing device 701, and a display device 7002 according to an embodiment of the present invention. FIG. 5 is a block diagram of an imaging-recording-reproducing-display system composed of video recording devices B and 703, reading means 731 and a display device 72, which is another embodiment of the present invention. FIG. 6 is an internal block configuration diagram of the synthesizing means 7 22 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
第 2 7図は第 2 6図と同様 、 第 2 4図の 7 2 0、 第 2 5図の 7 2 1 に対応する合成手段 7 2 3の別の実施例の 内部プロック構成図 FIG. 27 is a block diagram of another embodiment of the synthesizing means 7 23 corresponding to 7 20 in FIG. 24 and 7 2 1 in FIG.
第 2 8図は本発明の別の実施例におけるプロック構成図。
第 2 9図は第 2 8図の本発明の実施例におけるブロック 構成図での、 結像 · 撮像素子相対位置検出制御手段 5 0 ◦ブロック構成図 FIG. 28 is a block diagram of a block according to another embodiment of the present invention. FIG. 29 is a block diagram of an embodiment of the present invention shown in FIG. 28, which is a block diagram of the imaging / imaging element relative position detection control means 50 ◦
第 3 0図は本発明の更に別の実施例におけるブロック構 成図。 FIG. 30 is a block diagram of still another embodiment of the present invention.
【発明を実施するための最良の形態】 この発明の実施例を添付図面を参照して詳細に説明す る。 BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings.
第 1図は、 本発明の実施例における光電変換装置部分 のブロック構成図を示す。 被写体 3 5 0からの光学的情 報 4 0 0が光学的結像手段 3 7 1 により光学的結像情報 1 1 に変換され更に固体撮像素子 3 6 1 により電気的 情報 4 2 0と してと りだされる。 ここまでは第 2 1図の 従来例と同じである。 異なるのは結像 ' 撮像素子相対位 置変更制御信号 4 3 0により、 結像 · 撮像素子相対位置 ' 変更手段 3 9 0が、 光学的結像手段 3 7 1 と固体撮像素 子 3 6 1の少なく とも片方を動かすことにより、 光学的 結像情報 4 1 1 と固体撮像素子 3 6 1の該相対的位置関 係を固体撮像素子面と同一平面上で変化させ、 相対位置 が異なる複数の位置で、 光学的結像情報 4 1 1 を固体撮 像素子 3 6 1から電気的情報 4 2 0 として取り出す手段 を有していることである。 FIG. 1 is a block diagram showing a photoelectric conversion device according to an embodiment of the present invention. The optical information 400 from the subject 350 is converted into optical image information 11 by the optical imaging means 371, and further converted into electrical information 420 by the solid-state imaging device 361. It is taken out. Up to this point, it is the same as the conventional example in FIG. The difference is that the imaging / image sensor relative position change control signal 4300 changes the imaging / image sensor relative position change means 390 to the optical imaging means 371 and the solid-state image sensor 361 By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positions are changed. A means for extracting optical imaging information 4 11 from the solid-state imaging device 3 61 as electrical information 4 20 at the position.
第 2 8図は、 本発明の別の実施例におけるブロック構 成図を示す。 被写体 3 5 ◦からの光学的情報 4 0 0が光
学的結像手段 3 7 1 により光学的結像情報 4 1 1に変換 され更に固体撮像素子 3 6 1 により電気的情報 4 2 〇 と してと りだされる。 ここまでは第 2 1図の従来例と同じ である。 異なるのは結像 · 撮像素子相対位置変更制御信 号 4 3 0により、 結像 · 撮像素子相対位置変更手段 3 9 0が、 光学的結像手段 3 7 1 と固体撮像素子 3 6 1の少 なく とも片方を動かすことにより、 光学的結像情報 4 1 1 と固体撮像素子 3 6 1の該相対的位置関係を固体撮像 素子面と同一平面上で変化させ、 相対位置が異なる複数 の位置で、 光学的結像情報 4 1 1を固体撮像素子 3 6 1 から電気的情報 4 2 0と して取り出す手段を有している - <!·でめ *S? o FIG. 28 shows a block diagram of another embodiment of the present invention. Optical information from the subject 35 It is converted into optical imaging information 411 by the biological imaging means 371, and is further extracted as electrical information 42 by the solid-state imaging device 361. Up to this point, it is the same as the conventional example in FIG. The only difference is that the imaging and imaging element relative position changing means 390 are smaller than the optical imaging means 371 and solid-state imaging element 361 by the imaging and imaging element relative position change control signal 430. By moving at least one of them, the relative positional relationship between the optical imaging information 411 and the solid-state image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and at a plurality of positions having different relative positions. And means for extracting the optical imaging information 4 1 1 from the solid-state imaging device 3 6 1 as electrical information 4 2 0-<!
この第 2 8図が、 本発明の実施例におけるブロック構 成図である第 1図と異なるのは、 また結像 · 撮像素子相 対位置検出制御手段 5 0 0は電気的情報 4 2 0を入力信 号と し該相対位置を検出し、 該相対位置変位量を最適化 するように結像 · 撮像素子相対位置変更制御信号 4 3 0 を出力し、 結像 · 撮像素子相対位置変更手段 3 9 0を制 御する'1?、でめる。 This FIG. 28 is different from FIG. 1 which is a block configuration diagram in the embodiment of the present invention, in that the imaging / imaging element relative position detection control means 500 0 stores the electrical information 420. The relative position is detected as an input signal, and an image formation / image pickup device relative position change control signal 4330 is output so as to optimize the relative position displacement amount, and the image formation / image pickup device relative position change means 3 is output. Control 9 0, ' 1 ?
言い替えれば、 該相対位置関係が異なる複数の位置で 光学的に結像した像情報の電気的情報により、 該光学的 結像と該固体半導体撮像素子との相対的位置関係を検出 し制御することによって、 In other words, detecting and controlling the relative positional relationship between the optical imaging and the solid-state semiconductor imaging device based on the electrical information of the image information optically imaged at the plurality of positions having different relative positional relationships. By
機械的該相対位置の変位量を最適化するように自動的に 調整できる機能を有している。
第 2 9図は第 2 8図の本発明の実施例におけるブロッ ク構成図での、 結像 · 撮像素子相対位置検出制御手段 5 0〇ブロックの実施例を示す。 一般的には結像 · 撮像素 子相対位置変更制御信号 4 3 0は、 一本の制御信号と し て説明するが、 後述する第 2図以降の本発明での実施例 で示すように該相対位置を変化させる方向が複雑になる 場合、 当然結像 · 撮像素子相対位置変更制御信号 4 3 0 も該変化方向を制御する信号と変位量を制御する信号と を別々に考慮していく必要が生じて来る。 It has a function that can be automatically adjusted to optimize the mechanical displacement of the relative position. FIG. 29 is a block diagram of the embodiment of the present invention shown in FIG. 28, and shows an embodiment of the imaging / imaging element relative position detection control means 50 block. Generally, the imaging / imaging element relative position change control signal 430 is described as a single control signal, but as shown in the embodiments of the present invention after FIG. 2 to be described later. When the direction in which the relative position is changed becomes complicated, it is necessary to consider separately the signal for controlling the direction of change and the signal for controlling the amount of displacement for the imaging / relative position change control signal 430 of the image sensor. Is coming.
しかしここでは結像 · 撮像素子相対位置変更制御信号 4 3 0は、 基準電位に対して正負両方向に変化する信号 とし、 正負で該相対位置を変化させる方向を示し、 その 絶対値で変位量を示す信号として説明することとする。 当然正負の繰り返し周波数が結像 · 撮像素子相対位置変 更周波数と一致する。 However, here, the imaging / image sensor relative position change control signal 430 is a signal that changes in both the positive and negative directions with respect to the reference potential, and indicates the direction in which the relative position is changed in positive and negative directions. It will be described as a signal shown. Naturally, the positive / negative repetition frequency matches the imaging / image sensor relative position change frequency.
電気的情報 4 2 0は、 電気的情報合成手段 6 0 0に入 力され、 結像 · 撮像素子相対位置方向基準信号発生手段 6 0 2の出力である結像 · 撮像素子相対位置方向基準信 号 4 2 3により制御され合成され合成電気信号 4 2 1 と なる。 この電気的情報合成手段 6 ◦ 0は更に詳しく説明 すれば、 ひとつの結像 · 撮像素子相対位置で取り出され た電気的情報 4 2 0を、 遅延素子または記憶素子により 遅らし、 別の結像 ' 撮像素子相対位置で取り出された電 気的情報 4 2 0 とを合成するもので、 出力である合成電 気信号 4 2 1は複数の結像 · 撮像素子相対位置で取り出
された電気的情報 4 2 0がちょう ど該撮像素子での物理 的結像位置の順で取り出されるように合成される。 実際 に結像の電気的情報としての信号は、 この合成電気信号 4 2 1から使用してもよいし、 また別途電気的情報 4 2 0から、 別の合成手段を使用してもよい。 The electrical information 420 is input to the electrical information synthesizing means 600, and the imaging and image sensor relative position and direction reference signal output from the imaging and image sensor relative position and direction reference signal generating means 62 are input. The signal is controlled and synthesized by the signal No. 4 2 3 to obtain a synthesized electric signal 4 21. This electrical information synthesizing means 6◦0 will be described in further detail.Electrical information 420 extracted at one image formation / image sensor relative position is delayed by a delay element or a storage element to form another image. '' It combines the electrical information 420 extracted at the relative position of the image sensor, and the combined electrical signal 421, which is the output, is extracted at multiple relative positions of the imaging device and the image sensor. The obtained electrical information 420 is synthesized so as to be extracted just in the order of the physical imaging position in the image sensor. The signal as the electrical information of the actual image formation may be used from the combined electrical signal 421, or another combining means may be used separately from the electrical information 420.
この合成技術は、 現在テレビ、 ビデオ等で実現されてい る高画質化技術のひとつである、 走査線の縦方向でとな りあった映像信号の合成技術の応用と して実現可能であ る。 この場合本発明のプロック図では省略してあるが、 テレビ、 ビデオ等での映像信号合成技術と同様、 撮像素 子からの電気的情報 4 2 0 とともに水平、 垂直の同期信 号が必要である。 This synthesizing technology can be realized as an application of a video signal synthesizing technology that is displaced in the vertical direction of scanning lines, which is one of the high image quality technologies currently implemented in televisions and videos. . In this case, although omitted in the block diagram of the present invention, horizontal and vertical synchronization signals are required together with the electrical information 420 from the imaging device, similar to the video signal synthesis technology for television, video, etc. .
該合成電気信号 4 2 1は高周波成分検出手段 6 0 1 に入 力され、 合成電気信号 4 2 1が高周波成分が大きいほど 高周波検出出力 4 2 2は大きくなる。 制御部 6 0 3はこ の高周波検出出力 4 2 2により結像 · 撮像素子相対位置 方向基準信号 4 2 3を基準に結像 · 撮像素子相対位置の 変位量を決定して結像 · 撮像素子相対位置変更制御信号 4 3 0を出力する。 第 2図以降で詳細に説明するが、 ち よう ど適切な変位量になったときに、 該合成電気信号 4 2 1は、 もっとも高周波成分が多く なり、 高分解能の光 電変換装置と して機能する。 つま り変位量を変化させ、 該合成電気信号 4 2 1が最も高周波成分が多く なるよう 自動調整すればよい。 The synthesized electric signal 421 is inputted to the high frequency component detecting means 601, and the higher the high frequency component of the synthesized electric signal 421, the higher the high frequency detection output 422. The controller 603 forms an image with the high frequency detection output 422.Image is formed based on the image sensor relative position direction reference signal 423.Image is formed by determining the displacement amount of the image sensor relative position.Image sensor Outputs relative position change control signal 4330. As will be described in detail in FIG. 2 and subsequent figures, when the displacement amount becomes appropriate, the composite electric signal 421 has the highest frequency component, and is used as a high-resolution photoelectric conversion device. Function. In other words, the displacement amount may be changed, and the combined electric signal 421 may be automatically adjusted so as to have the highest frequency component.
この技術は、 ビデオカメラ等で使用されるオー トフォ
一カス技術でいわゆるパッシブ型でコン トラス ト検出方 式のなかでピエゾオートフォーカスと呼ばれるものと同 様な技術で実現可能である。 このピエゾオー トフォー力 ス方式では、 撮像素子をピエゾ素子で動かし、 ピン トが あって画像の輪郭がはっきりすると、 映像信号に高周波 成分が多くなるのでその成分を調べこれをピン ト電圧と する方法である。 This technology is used for auto cameras used in video cameras, etc. It can be realized by a technology similar to what is called a piezo autofocus in the contrast detection method, a so-called passive type contrast technology. In this piezo auto force method, the image sensor is moved by the piezo element, and when the image is focused and the outline of the image is clear, the high-frequency component increases in the video signal, so the component is examined and this is used as the focus voltage. is there.
本発明では光学的結像と該撮像素子との相対的位置関 係を該撮像素子面と同一面上で変化させ方式であり、 前 述のピエゾオートフォーカス方式では、 光学的結像と該 撮像素子との相対的位置関係を該撮像素子面と鉛直方向 つまりピン トが変化する方向で変化させ方式であり、 該 相対位置の変化方向及び目的とするところは全く異なる が、 一般的な相対的位置関係を制御する方式と しては、 従来技術の応 で可能である。 In the present invention, the relative positional relationship between the optical imaging and the imaging device is changed on the same plane as the imaging device surface. In the above-described piezo autofocus method, the optical imaging and the imaging are performed. This is a method in which the relative positional relationship with the element is changed in a direction perpendicular to the imaging element surface, that is, in the direction in which the focus changes. The direction of change of the relative position and the intended purpose are completely different, but general relative As a method of controlling the positional relationship, it is possible to respond to the conventional technology.
また本発明では、 被写体からの光学的情報を利用して該 相対位置の変位量を調整する方法である。 被写体自体が 急激に移動する場合、 また被写体自体がコン トラス トが 弱く、 得られた電気的情報にあまり高周波成分がない場 合等が考えられる。 被写体のこのような状態は、 一般に いわゆるパッシブ型でコン トラス ト検出方式でのォー ト フォーカス方式でもピン トの迷いとしてあらわれるが、 これを解決するための方法と同様に、 本発明の場合でも 第 2 9図での制御部 6 0 3内で、 制御に適当な時定数を 設定する方法、 また変位量設定メモリを設けて適切な変
位量の状態を記憶しておく等の方法で対処可能である。 更に本発明では使用する映像信号と して、 光学的に結 像される像と該固体撮像素子との相対位置関係を、 該固 体撮像素子面と同一平面上で変化させ、 該相対位置関係 が異なる複数の位置で、 光学的に結像した像情報を該固 体撮像素子から電気的情報と して取り出し、 複数の電気 的情報を合成したものを使用していることに特徴がある。 この合成技術も前述の通り、 テレビ、 ビデオ等での高画 質技術を応用して可能であるため、 第 2 9図での結像 - 撮像素子相対位置検出制御手段 5 0 0のブロック内の実 施例は、 他の方法も考えることができるが、 更なる詳細 な説明は省略する。 Further, the present invention is a method of adjusting the displacement of the relative position by using optical information from a subject. The case where the subject itself moves rapidly, the case where the contrast of the subject itself is weak, and the obtained electrical information does not include much high frequency components, etc., can be considered. Such a state of the subject generally appears as a loss of focus even in a so-called passive type and an autofocus method in a contrast detection method, but similarly to the method for solving the problem, the present invention is also applicable. In the control unit 603 in Fig. 29, a method for setting an appropriate time constant for control, and an appropriate amount of This can be dealt with by a method such as storing the state of the position. Further, in the present invention, as a video signal to be used, the relative positional relationship between the optically formed image and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device. It is characterized in that image information optically formed at a plurality of different positions is extracted as electrical information from the solid-state imaging device, and a combination of the plurality of electrical information is used. As described above, this synthesizing technique is also possible by applying a high-quality technique for television, video, etc., so that the imaging-image sensor relative position detection control means 500 in FIG. Embodiments may consider other methods, but further detailed description is omitted.
また電気的情報合成手段 6 0 0、 高周波成分検出手段 6 〇 1等の結像 · 撮像素子相対位置検出制御手段 5 0 0 の一部は、 固体撮像素子 3 6 1内につく り込むことも可 能 ^ める Also, a part of the imaging / relative position detection control means 500 of the electric information synthesizing means 600 and the high-frequency component detecting means 6 〇 1 may be incorporated in the solid-state image sensor 36 1. Possible ^
結像 ♦ 撮像素子相対位置検出制御手段 5 ◦ 0のブロッ クは共通であるため省略して説明する。 つま り、 結像 - 撮像素子相対位置変更手段 3 9 0を制御する結像 · 撮像 素子相対位置変更制御信号 4 3 0 自体は、 上記省略した 結像 · 撮像素子相対位置検出制御手段 5 0 0のブロック から発生されるものとして説明する。 Imaging ♦ Blocks of image sensor relative position detection control means 5 ◦ 0 are common and will not be described. In other words, the imaging-imaging element relative position changing means 390 which controls the imaging element relative position changing means 390The imaging element relative position changing control signal 430 itself is the above-described omitted imaging. The explanation will be made assuming that the block is generated.
また別の言い方をすれば本発明の実施例である第 2 8 図以外の方法で該相対位置を制御する方法も含めたもの が本発明の第 1図の実施例のブロック図であり、 第 2図
から第 7図までは、 本発明の第 1図に相当する実施例の 更に具体的な実施例である。 In other words, a block diagram of the embodiment of FIG. 1 of the present invention including a method of controlling the relative position by a method other than that of FIG. 28, which is an embodiment of the present invention, is shown in FIG. Figure 2 7 to 7 are more specific embodiments of the embodiment corresponding to FIG. 1 of the present invention.
次に第 2図から第 7図に具体的な実施例をしめすが、 前述の通り結像 · 撮像素子相対位置変更手段 3 9 0は光 学的結像手段 3 7 1 と固体撮像素子 3 6 1の両方を動か す必要はなく、 片方のみでもかまわないことを前提に説 明していく。 Next, a specific embodiment is shown in FIG. 2 to FIG. 7. As described above, the imaging / imaging element relative position changing means 390 is composed of the optical imaging means 37 1 and the solid-state imaging element 36. It is assumed that it is not necessary to move both of them, only one of them is sufficient.
第 2図は、 本発明の実施例における構成図であり、 1 7 1は光学的結像手段としての代表的なレンズであり、 1 7 2は固体撮像素子で被写体 1 Ί 3の固体撮像素子上 の結像が 1 7 4であり、 1 7 5は光学的に結像される像 と該固体撮像素子との相対位置関係を、 該固体撮像素子 面と同一平面上で変化させる部品である。 ここでは 1 7 5は 1 7 2の固体撮像素子の下部につけてあるが、 模式 的に示したもので一部が 1 7 2の固体撮像素子に固定さ れ他の部位が固定されていて、 例えばピエゾ素子のよう な電気的信号により機械的変位を起こすものであればよ い。 つまり 1 7 2の固体撮像素子を左右に変位させるこ とができれば取付位置は下部にこだわらず左右上下また は裏側でもかまわない。 矢印で示す L方向は 1 7 2の固 体撮像素子が左に動ぐことを示し、 また矢印で示す R方 向は 1 Ί 2の固体撮像素子が右に動く ことを示す。 FIG. 2 is a configuration diagram of an embodiment of the present invention. Reference numeral 171 denotes a representative lens as optical imaging means, and reference numeral 172 denotes a solid-state image sensor, The upper image is 174, and 175 is a component that changes the relative positional relationship between the optically formed image and the solid-state imaging device on the same plane as the surface of the solid-state imaging device. . Here, 175 is attached to the lower part of the solid-state imaging device of 172, but is schematically shown, and a part is fixed to the solid-state imaging device of 172, and other parts are fixed. For example, any element that causes mechanical displacement by an electric signal such as a piezo element may be used. In other words, if the solid-state imaging device 17 can be displaced left and right, the mounting position may be left, right, up, down, or the back, without being limited to the lower portion. The L direction indicated by the arrow indicates that the 17 2 solid-state imaging device moves to the left, and the R direction indicated by the arrow indicates that the 1Ί2 solid-state imaging device moves to the right.
第 3図は本発明の別の実施例 2での構成図であり、 第 FIG. 3 is a block diagram of another embodiment 2 of the present invention.
2図と同様に 1 7 1は光学的結像手段としての代表的な レンズであり、 1 7 2は固体撮像素子で被写体 1 7 3の
固体撮像素子上の結像が 1 7 4である。 第 2図と異な るのは、 光学的に結像される像と該固体撮像素子との相 対位置関係を、 該固体撮像素子面と同一平面上で変化さ せるために、 1 7 2の固体撮像素子を動かすのではなく、 光学的結像装置側で動かすことである。 ここでは動かす 部品 1 7 6を 1 7 1のレンズの下部につけてあるが、 第 2図と同様に模式的に示したもので一部が 1 Ί 1のレン ズに固定され他の部位が固定されていて、 例えばピエゾ 素子のような電気的信号により機械的変位を起こすもの であればよい。 またこの場合は 1 7 1のレンズを動かす のみに限らず、 1 7 2の固体撮像素子上に結像した像 1 7 4を、 光学的結像装置側で動かすものであればよく、 例えば光路上にミラーとかプリズムを置き、 方向を変え る方法も考えられる。 この点については別の実施例と し て第 1 4、 1 5、 1 6、 1 8図でのブロック構成図で後 述する。 矢印で示す L方向は 1 7 1のレンズが右方向に 動き、 相対的に第 2図の場合と同様に結像された像 1 7 4に対して 1 7 2の固体撮像素子が左に動く ことを示し、 また矢印で示す R方向は 1 7 1のレンズが左方向に動き、 相対的に第 2図の場合と同様に結像された像 1 7 4に対 して 1 7 2の固体撮像素子が右に動く ことを示す。 As in Fig. 2, 17 1 is a representative lens as an optical imaging means, and 17 2 is a solid-state The image formed on the solid-state imaging device is 174. The difference from FIG. 2 is that in order to change the relative positional relationship between the optically imaged image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor, the difference in FIG. It is not to move the solid-state imaging device, but to move it on the optical imaging device side. Here, the moving parts 17 6 are attached to the lower part of the 17 1 lens, but are schematically shown in the same way as in Fig. 2, with a part fixed to the 1 1 lens and other parts fixed. Any material that causes mechanical displacement by an electric signal such as a piezo element may be used. In this case, not only the movement of the lens 171, but also the movement of the image 174 formed on the solid-state imaging device 172 on the optical imaging device side is sufficient. A way to change the direction by placing a mirror or prism on the road is also conceivable. This point will be described later as another embodiment with reference to block diagrams in FIGS. 14, 15, 16, and 18. In the L direction indicated by the arrow, the lens 17 1 moves to the right, and the solid-state image sensor 17 2 moves to the left relative to the image 17 4 formed as in the case of Fig. 2. In the R direction indicated by the arrow, the lens 17 1 moves to the left, and the solid image 17 2 is relatively formed as in the case of FIG. 2. Indicates that the image sensor moves to the right.
第 4図は本発明の更に別の実施例 3であり、 第 2図は 1 7 2の固体撮像素子を左右に動かすのに対し第 4図は 1 7 2の固体撮像素子を上下に動かす場合である。 1 7 7は第 2図の 1 7 5に相当する部品である。 U方向は 1
7 2の固体撮像素子が上に動くことを示し、 また矢印で 示す D方向は 1 7 2の固体撮像素子が下に動く ことを示 す。 FIG. 4 shows still another embodiment 3 of the present invention, and FIG. 2 shows a case where the solid-state image sensor 17 2 is moved left and right while FIG. 4 shows a case where the solid-state image sensor 17 2 is moved up and down. It is. Reference numeral 177 denotes a part corresponding to 175 in FIG. U direction is 1 The solid-state image sensor 72 moves upward, and the D direction indicated by an arrow indicates that the solid-state image sensor 72 moves downward.
第 5図は本発明の更に別の実施例 4であり、 第 3図は 1 7 2の固体撮像素子上に結像した像 1 7 4を光学的結 像装置側で左右に動かすのに対し第 5図は上下に動かす 場合である。 1 7 8は第 3図の 1 7 6に相当する部品で ある。 矢印で示す D方向は 1 7 1のレンズが上方向に動 き、 相対的に第 2図の場合と同様に結像された像 1 7 4 に対して 1 7 2の固体撮像素子が下に動くことを示し、 また矢印で示す U方向は 1 7 1のレンズが下方向に動き、 相対的に第 2図の場合と同様に結像された像 1 7 4に対 して 1 7 2の固体撮像素子が上に動く ことを示す。 FIG. 5 shows still another embodiment 4 of the present invention, and FIG. 3 shows that the image 17 4 formed on the solid-state image pickup device 17 2 is moved left and right on the optical imaging device side. Fig. 5 shows the case of moving up and down. Reference numeral 178 denotes a part corresponding to 176 in FIG. In the direction D indicated by the arrow, the lens 17 1 moves upward, and the solid-state image sensor 17 2 moves downward relative to the image 17 4 formed as in the case of Fig. 2. In the U direction indicated by the arrow, the lens 17 1 moves downward, and the lens 17 1 moves relative to the image 17 4 formed in the same way as in FIG. Indicates that the solid-state image sensor moves upward.
第 6図は本発明の更に別の実施例 5であり、 第 2図と 第 4図の組合せた例であり固体撮像素子を上下、 左右に 動かすことが出来る。 FIG. 6 shows still another embodiment 5 of the present invention, which is an example in which FIGS. 2 and 4 are combined, in which the solid-state imaging device can be moved up, down, left, and right.
第 7図は本発明の更に別の実施例 6であり、 第 3図と 第 5図の組合せた例であり、 第 6図と同様に相対的に結 像された像 1 7 4に対して、 1 7 2の固体撮像素子を上 下、 左右に動かすことが出来る。 そのほか第 6図、 第 7 図の実施例とは別に、 第 2図と第 5図の組合せ、 または 第 3図と第 4図の例を組み合わせることによって、 左右、 上下の動作を固体撮像素子と光学的結像手段に分けるこ とも可能である。 FIG. 7 shows still another embodiment 6 of the present invention, which is an example in which FIG. 3 and FIG. 5 are combined. As shown in FIG. , And 172 solid-state imaging devices can be moved up, down, left, and right. Apart from the embodiment of FIGS. 6 and 7, by combining the examples of FIGS. 2 and 5, or by combining the examples of FIGS. It is also possible to divide into optical imaging means.
第 8図 ( a )、 第 8図 ( b ) は、 本発明の第 2図、 第
3図の実施例 1、 2の場合の固体撮像素子 1 72上に結 像した像 1 74と 2 0 1から 2 3 6の各画素のホ トダイ オー ド部との位置関係を示す図である。 第 8図 ( a ) は 固体撮像素子 1 72上に結像した像 1 74に対して相対 的に固体撮像素子 1 72が水平方向で左側に変位した場 合であり、 第 8図 ( b ) は結像した像 1 74に対して相 対的に固体撮像素子 1 72が水平方向で右側に変位した 場合である。 第 8図 ( a ) と第 8図 ( b ) との場合の固 体撮像素子 1 72の水平方向の変位量は 1 2画素ピッ チである。 前述のとおりこのホトダイオー ド部のみが光 電変換部でありその他の部分は非光電変換領域である。 このためホトダイォード部分以外では被写体の像が結像 していても電気的に像は検出できない。 言い替えれば 光学的結像装置の分解能がいく ら高くても実際に電気的 に取り出すことが出来る情報は 2 0 1から 2 3 6のホ ト ダイオー ド部で示される 3 6個の窓から見える部分のみ である。 第 8図 ( a ) と第 8図 ( b ) のホ トダイオー ド 部の窓からは、 結像された像 1 74のみえる部分が異な るため、 両者の電気的情報を取り出し合成することによ り解像度をあげることが可能である。 第 9図は第 8図 ( a ) と第 8図 ( b ) の両者の合成された窓と、 結像さ れた像 1 74の関係を示す。 この場合は図から明かなよ うに水平解像度をあげることが可能である。 FIG. 8 (a) and FIG. 8 (b) correspond to FIG. 2 and FIG. FIG. 3 is a diagram showing a positional relationship between an image formed on a solid-state image sensor 172 and a photodiode portion of each of pixels 201 to 236 in Examples 1 and 2 in FIG. . FIG. 8 (a) shows the case where the solid-state image sensor 172 is displaced to the left in the horizontal direction relative to the image 174 formed on the solid-state image sensor 172, and FIG. 8 (b) The case where the solid-state imaging device 172 is displaced to the right in the horizontal direction relative to the formed image 174 is shown. The horizontal displacement of the solid-state imaging device 172 in FIGS. 8A and 8B is 12 pixel pitches. As described above, only the photodiode portion is a photoelectric conversion portion, and the other portions are non-photoelectric conversion regions. For this reason, an image cannot be detected electrically even if an image of the subject is formed in portions other than the photodiode portion. In other words, no matter how high the resolution of the optical imaging device is, the information that can be actually extracted electrically is the part that can be seen from the 36 windows indicated by the photodiodes 21 to 23. Only. From the window of the photodiode in FIGS. 8 (a) and 8 (b), the visible part of the image 174 is different, so the electrical information of both is taken out and synthesized. It is possible to increase the resolution. FIG. 9 shows the relationship between the combined window of FIGS. 8 (a) and 8 (b) and the image 174 formed. In this case, it is possible to increase the horizontal resolution as is clear from the figure.
第 1 0図 ( a ) 、 第 1 0図 ( b ) は、 本発明の第 4図、 第 5団の実施例 3、 4の場合の固体撮像素子 1 72上に
結像した像 1 74と 20 1から 2 3 6の各画素のホトダ ィオード部との位置関係を示す図である。 第 1 0図 ( a) は固体撮像素子 1 72上に結像した像 1 74に対して相 対的に固体撮像素子 172が垂直方向で上側に変位した 場合であり、 第 1 0図 (b ) は結像した像 1 74に対し て相対的に固体撮像素子 1 72が垂直方向で下側に変位 した場合である。 第 10図 ( a ) と第 1 0図 ( b ) との 場合の固体撮像素子 172の垂直方向の変位量は 1 Z 2 画素ピッチである。 第 8図 ( a ) と第 8図 ( b ) の組合 せと同様に、 第 1 0図 ( a ) と第 1 0図 (b ) のホトダ ィオード部の窓からは、 結像された像 1 74のみえる部 分が異なるため、 両者の電気的情報を取り出し合成する ことにより解像度をあげることが可能である。 第 1 1 図は第 1 0図 ( a ) と第 10図 ( b ) の両者の合成され た窓と、 結像された像 1 74の関係を示す。 この場合は 図から明かなように垂直解像度をあげることが可能であ - 。 FIGS. 10 (a) and 10 (b) show the solid-state image pickup device 172 in the case of the third and fourth embodiments of FIG. 4 and the fifth group of the present invention, respectively. FIG. 18 is a diagram showing a positional relationship between the formed images 174 and 201 to 236 with respect to a photodiode portion. FIG. 10 (a) shows the case where the solid-state image sensor 172 is displaced upward in the vertical direction relative to the image 1174 formed on the solid-state image sensor 172, and FIG. ) Shows the case where the solid-state imaging device 172 is displaced downward in the vertical direction relative to the formed image 174. In FIGS. 10 (a) and 10 (b), the vertical displacement of the solid-state imaging device 172 is 1Z2 pixel pitch. As in the combination of Figs. 8 (a) and 8 (b), the image formed from the window of the photo diode in Figs. 10 (a) and 10 (b) is Since the visible part is different, it is possible to increase the resolution by extracting and combining the electrical information of both. FIG. 11 shows the relationship between the synthesized window of FIGS. 10 (a) and 10 (b) and the image 174 formed. In this case, it is possible to increase the vertical resolution as is evident from the figure.
第 1 2図 ( a ) 、 第 1 2図 (b ) 、 第 1 2図 ( c ) 、 第 1 2図 ( d ) は、 本発明の第 6図、 第 7図の実施例 5、 6の場合の固体撮像素子 1 72上に結像した像 174と 20 1から 2 3 6の各画素のホトダイオード部との位置 関係を示す図である。 FIGS. 12 (a), 12 (b), 12 (c) and 12 (d) show the embodiments 5 and 6 of FIGS. 6 and 7 of the present invention. FIG. 18 is a diagram showing a positional relationship between an image 174 formed on a solid-state imaging device 172 and photodiodes 201 to 236 in each case.
第 1 2図 ( a ) は固体撮像素子 1 72上に結像した像 1 7 に対して相対的に固体撮像素子 1 72が垂直方向で 上側にかつ水平方向に左側に変位した場合であり、 第 1
2図 ( b ) は固体撮像素子 1 72上に結像した像 1 74 に対して相対的に固体撮像素子 1 7 2が垂直方向で上側 にかつ水平方向に右側に変位した場合であり、 第 1 2図 ( c ) は固体撮像素子 1 72上に結像した像 1 74に対 して相対的に固体撮像素子 1 72が垂直方向で下側にか つ水平方向に左側に変位した場合であり、 第 1 2図 ( d) は固体撮像素子 1 72上に結像した像 1 74に対して相 対的に固体撮像素子 1 72が垂直方向で下側にかつ水平 方向に右側に変位した場合である。 第 12図 ( a ) 、 第 1 2図 ( b ) 、 第 1 2図 ( c ) 、 第 1 2図 ( d ) との場 合の固体撮像素子 1 72の水平、 垂直方向の変位量は 1 Z2画素ピッチである。 第 8図 ( a ) と第 8図 (b ) の 組合せと同様に、 第 1 2図 ( a ) 、 第 1 2図 ( b ) 、 第 1 2図 ( c ) 、 第 1 2図 ( d ) のホ トダイオー ド部の窓 からは、 結像された像 1 74のみえる部分が異なるため、 4つの電気的情報を取り出し合成することにより解像度 をあげることが可能である。 水平方向、 垂直方向とは個 別に合成することも可能である。 FIG. 12 (a) shows a case where the solid-state image sensor 172 is displaced upward in the vertical direction and leftward in the horizontal direction relative to the image 17 formed on the solid-state image sensor 172. First 2 (b) shows the case where the solid-state image sensor 172 is displaced vertically upward and horizontally to the right relative to the image 1174 formed on the solid-state image sensor 172. Fig. 12 (c) shows the case where the solid-state image sensor 172 is displaced vertically downward and horizontally to the left relative to the image 174 formed on the solid-state image sensor 172. Fig. 12 (d) shows that the solid-state image sensor 172 is displaced vertically downward and horizontally to the right relative to the image 174 formed on the solid-state image sensor 172. Is the case. The displacement in the horizontal and vertical directions of the solid-state imaging device 172 in the case of FIG. 12 (a), FIG. 12 (b), FIG. 12 (c), and FIG. This is the Z2 pixel pitch. Similar to the combination of Fig. 8 (a) and Fig. 8 (b), Fig. 12 (a), Fig. 12 (b), Fig. 12 (c), Fig. 12 (d) From the window of the photodiode section, the visible part of the formed image 174 is different, so it is possible to increase the resolution by extracting and combining four pieces of electrical information. It is also possible to combine them separately in the horizontal and vertical directions.
第 1 3図は、 第 1 2図 ( a ) 、 第 1 2図 ( b ) 、 第 1 2図 ( c ) 、 第 1 2図 ( d ) の 4つの合成された窓と、 結像された像 1 74の関係を示す。 この場合は水平、 垂 直ともに解像度をあげることが可能である。 Fig. 13 shows the four synthesized windows of Fig. 12 (a), Fig. 12 (b), Fig. 12 (c), and Fig. 12 (d). The relationship of image 174 is shown. In this case, it is possible to increase the resolution both horizontally and vertically.
いずれの場合も取り出した電気的信号を必要に応じて 合成することは、 アナログ的には C C D等により、 ディ ジタル的にはメモリ等を使用することにより容易に実現
可能である。 更にこの合成手段を、 該固体撮像素子上に、 造り込み 1チップ化することも実現可能である。 In any case, combining the extracted electrical signals as necessary can be easily realized by using a CCD etc. for analog and a memory etc. for digital It is possible. Furthermore, it is also feasible to integrate this synthesizing means into a single chip on the solid-state imaging device.
第 1 4図は本発明の更に別の実施例でのブロック構成 図を示す。 以下本発明の実施例第 1図の場合と対比しな がら説明する。 被写体 3 5 0からの光学的情報 4 0 0が 光学的結像手段 3 7 2により光学的結像情報 4 1 2に変 換され光路内の結像位置変更手段 3 9 2により光の向き を変えられ光学的結像情報 4 1 3 となり、 更に固体撮像 素子 3 6 1により電気的情報 4 2 0 と してと りだされる。 ここで本発明の第 1図の実施例のプロック構成図の場合 と異なるのは第 1図で結像 · 撮像素子相対位置変更制御 信号 4 3 0により、 結像 · 撮像素子相対位置変更手段 3 9 0が、 光学的結像手段 3 7 1自体を直接動かすのに対 して、 第 1 4図では光学的結像手段 3 7 2を通った光学 的結像情報 4 1 2の光の向きを光路内結像位置変更手段 3 9 2 によって動かし、 光学的結像情報 4 1 3 として固 体撮像素子 3 6 1上に結像させ電気的情報 4 2 0として とりだすことである。 また結像 ' 撮像素子相対位置変更 制御信号 4 3 0により、 結像 · 撮像素子相対位置変更手 段 3 9 1が、 固体撮像素子 3 6 1を動かし、 光学的結像 情報 4 1 3と固体撮像素子 3 6 1の相対的位置関係を、 固体撮像素子面と同一平面上で変化させ、 相対位置が異 なる複数の位置で、 光学的結像情報 4 1 3を固体撮像素 子 3 6 1から電気的情報 4 2 ◦と して取り出す点は本発 明の第 1図の場合と同様である。 具体的な光路内結像位
置変更手段 3 9 2 と しては、 光路内に光学的鏡を置き電 気的制御信号により鏡自体を動かし光の向きを変える方 法、 また光路内に光を屈折透過する物体を置き電気的信 号により、 該物体の位置を変更する方法、 また光路内に 電気的信号で通過する光の向きをかえる物体を置く方法 等反射、 屈折、 透過等光の性質を利用した方法により実 現可能である。 更に第 1図の場合と同様に固体撮像素子 3 6 1を動かす結像 · 撮像素子相対位置変更手段 3 9 1 が無く光路内結像位置変更手段 3 9 2のみで、 光学的結 像情報 4 1 3 と固体撮像素子 3 6 1の相対的位置関係を、 固体撮像素子面と同一平面上で変化させるような別の実 施例も可能である。 FIG. 14 shows a block diagram of still another embodiment of the present invention. Hereinafter, an embodiment of the present invention will be described in comparison with the case of FIG. The optical information 400 from the subject 350 is converted into optical imaging information 412 by the optical imaging means 372, and the light direction is changed by the imaging position changing means 392 in the optical path. The optical imaging information is changed into 4 13, which is further extracted as electrical information 4 20 by the solid-state imaging device 36 1. Here, the difference from the block configuration diagram of the embodiment of FIG. 1 of the present invention in FIG. 1 is that the imaging and the imaging device relative position changing means 3 are changed by the imaging and imaging device relative position change control signal 4330 in FIG. While 90 moves the optical imaging means 3 71 itself directly, in FIG. 14, the direction of light of the optical imaging information 4 12 passing through the optical imaging means 37 2 is shown in FIG. Is moved by the imaging position changing means 392 in the optical path to form an image on the solid-state image sensor 361 as optical image information 413 and to extract it as electrical information 420. In addition, the imaging / imaging element relative position change means 391 moves the solid-state imaging element 361, and the optical imaging information 413 and the solid The relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 413 is transferred to the solid-state image sensor 361 at a plurality of positions having different relative positions. It is the same as in the case of FIG. 1 of the present invention in that electrical information is extracted as 42 ° from FIG. Specific optical path imaging position As the position changing means 392, there is a method in which an optical mirror is placed in the optical path and the mirror itself is moved by an electric control signal to change the direction of the light, or an object that refracts and transmits light in the optical path is placed in the electric path. A method using the properties of light such as reflection, refraction, transmission, etc., such as a method of changing the position of the object using a static signal, and a method of placing an object that changes the direction of light passing by an electric signal in the optical path. It is possible. Further, as in the case of FIG. 1, the imaging to move the solid-state imaging device 361, the imaging device relative position changing device 391 is not provided, and only the imaging position changing device 392 in the optical path is used. Another embodiment is possible in which the relative positional relationship between 13 and the solid-state imaging device 36 1 is changed on the same plane as the surface of the solid-state imaging device.
第 1 5図は本発明の更に別の実施例でのプロック構成 図を示す。 以下第 1 4図の場合と対比しながら説明する。 被写体 3 5 0からの光学的情報 4 0 0が、 光路変更手段 3 9 0により光の向きを変えられ光 4 0 1 となり次に光 学的結像手段 3 7 2 により光学的結像情報 4 1 4に変換 され、 更に固体撮像素子 3 6 1により電気的情報 4 2 〇 としてと りだされる。 ここで本発明の別の実施例である 第 1 4図のブロック構成図と異なるのは、 第 1 4図での 光路内結像位置変更手段 3 9 2 と同等の作用をする第 1 5図の光の向きを変える光路変更手段 3 9 0が光学的結 像手段 3 7 2の前にあることである。 また結像 ' 撮像素 子相対位置変更制御信号 4 3 0により、 結像 · 撮像素子 相対位置変更手段 3 9 1が、 固体撮像素子 3 6 1を動か
し、 光学的結像情報 4 1 4と固体撮像素子 3 6 1の相対 的位置関係を、 固体撮像素子面と同一平面上で変化させ、 相対位置が異なる複数の位置で、 固体撮像素子 3 6 1か ら光学的結像情報 4 1 4を変換して電気的情報 4 2 ◦ と して取り出す点は本発明の第 1 4図の場合と同様である。 また具体的な光路変更手段 3 9 0 としては、 第 1 4図の 場合の光路内結像位置変更手段 3 9 2 と同様な方法で実 現可能である。 更に第 1 4図の場合と同様に固体撮像素 子 3 6 1 を動かす結像 · 撮像素子相対位置変更手段 3 9 1が無く光路変更手段 3 9 0のみで、 光学的結像情報 4 1 4と固体撮像素子 3 6 1の相対的位置関係を、 固体撮 像素子面と同一平面上で変化させるような別の実施例も 可能である。 FIG. 15 shows a block diagram of still another embodiment of the present invention. This will be described below in comparison with the case of FIG. The optical information 400 from the subject 350 is turned into light 401 by changing the direction of the light by the optical path changing means 390, and then the optical imaging information 4 is obtained by the optical imaging means 372. It is converted to 14 and further extracted as electrical information 42 に よ り by the solid-state imaging device 36 1. Here, the difference from the block diagram of FIG. 14 which is another embodiment of the present invention is that FIG. 15 which has the same operation as the in-optical-path imaging position changing means 392 in FIG. That is, the optical path changing means 390 for changing the direction of the light is located in front of the optical imaging means 372. Also, the imaging / imaging element relative position changing means 391 moves the solid-state imaging element 361 by the imaging / imaging element relative position change control signal 4330. The relative positional relationship between the optical imaging information 4 14 and the solid-state image sensor 36 1 is changed on the same plane as the solid-state image sensor surface, and the solid-state image sensor 36 The point that the optical imaging information 4 14 is converted from 1 and extracted as electrical information 4 2 ° is the same as in the case of FIG. 14 of the present invention. The specific optical path changing means 390 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG. 14, an image is formed by moving the solid-state imaging device 361, and the optical imaging information 4 1 4 is obtained only by the optical path changing device 390 without the imaging device relative position changing device 391. Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
第 1 6図は本発明の更に別の実施例でのプロック構成 図を示す。 以下本発明の実施例第 1 4、 1 5図の場合と 対比しながら説明する。 被写体 3 5 0からの光学的情報 4 0 0が光路可変機構付き光学的結像手段 3 7 9により 結像及び光の向きを変えられる。 光路可変機構付き光学 的結像手段 3 7 9は第 1の光学的結像手段 3 7 4、 光路 変更手段 3 9 4、 第 2の光学的結像手段 3 7 5 により構 成され、 光学的情報 4◦ ◦は第 1の光学的結像手段 3 7 4により光学的結像情報 4 1 5に変換され、 次に光路変 更手段 3 9 4により光の向きを変えられ光学的結像情報 4 1 6 となり、 次に第 2の光学的結像手段 3 7 5を通り 光学的結像情報 4 1 7となり、 更に固体撮像素子 3 6 1
により電気的情報 4 2 ◦ と してと りだされる。 ここで本 発明の別の実施例の第 1 4、 1 5図のブロック構成図と 異なるのは光路変更手段 3 9 4が二つの光学的結像手段 3 7 4、 3 7 5の間にあることである。 これは高精度の 光学的結像手段と しては複数枚のレンズが使用されるの が一般的であり、 光路変更手段 3 9 4が複数のレンズの 間にある場合の例である。 また結像 · 撮像素子相対位置 変更制御信号 4 3 0により、 結像 · 撮像素子相対位置変 更手段 3 9 1が、 固体撮像素子 3 6 1 を動かし、 光学的 結像情報 4 1 7 と固体撮像素子 3 6 1の相対的位置関係 を、 固体撮像素子面と同一平面上で変化させ、 相対位置 が異なる複数の位置で、 固体撮像素子 3 6 1 により光学 的結像情報 4 1 7を電気的情報 4 2 0 として変換して取 、 り出す点は本発明の第 1 4、 1 5図の場合と同様である。 .また具体的な光路変更手段 3 9 1 としては、 第 1 4図の 場合の光路内結像位置変更手段 3 9 2 と同様な方法で実 現可能である。 更に第 1 4図の場合と同様に固体撮像素 子 3 6 1を動かす結像 · 撮像素子相対位置変更手段 3 9 1が無く光路変更手段 3 9 4のみで、 光学的結像情報 4 1 7 と固体撮像素子 3 6 1の相対的位置関係を、 固体撮 像素子面と同一平面上で変化させるような別の実施例も 可能である。 FIG. 16 shows a block diagram of still another embodiment of the present invention. Hereinafter, an embodiment of the present invention will be described in comparison with the case of FIGS. The optical information 400 from the subject 350 can be image-formed and the direction of the light can be changed by the optical imaging means 379 with the variable optical path mechanism. The optical imaging means with variable optical path mechanism 379 comprises a first optical imaging means 374, an optical path changing means 394, and a second optical imaging means 375. The information 4 ◦ ◦ is converted into optical imaging information 415 by the first optical imaging means 374, and then the optical direction is changed by the optical path changing means 394 to obtain the optical imaging information. 4 16, and then passes through the second optical imaging means 3 75 to become optical imaging information 4 17, and furthermore, the solid-state image sensor 3 6 1 Is retrieved as electrical information 42 ◦. Here, the difference from the block diagram of FIGS. 14 and 15 of another embodiment of the present invention is that the optical path changing means 3 94 is between the two optical imaging means 3 7 4 and 3 75 That is. This is an example in which a plurality of lenses are generally used as high-precision optical imaging means, and the optical path changing means 394 is provided between the plurality of lenses. The imaging / image sensor relative position change control signal 4330 causes the image / image sensor relative position change means 391 to move the solid-state image sensor 361, and the optical image information 417 and the solid The relative positional relationship of the image sensor 361 is changed on the same plane as the surface of the solid-state image sensor, and the optical imaging information 417 is electrically generated by the solid-state image sensor 361 at a plurality of positions having different relative positions. The point of conversion and extraction as the target information 420 is the same as in the case of FIGS. 14 and 15 of the present invention. The specific optical path changing means 391 can be realized by the same method as the in-optical path image position changing means 392 in the case of FIG. Further, as in the case of FIG. 14, an image is formed by moving the solid-state image sensor 361, and there is no image sensor relative position changing means 391, and only the optical path changing means 394 4 provides optical image information 4 1 7 Another embodiment is possible in which the relative positional relationship between the solid-state imaging device and the solid-state imaging device is changed on the same plane as the surface of the solid-state imaging device.
第 1 7図は本発明の更に別の実施例でのブロック構成 図を示す。 以下本発明の実施例第 1 4、 1 5、 1 6図の 場合と対比しながら説明する。 被写体 3 5 0からの光学
的情報 4 0◦が光学的結像手段 3 7 2により光学的結像 情報 4 1 8に変換され、 光路可変機構付き固体撮像素子 3 6 9により電気的情報 4 2 ◦と してとりだされる。 光 路可変機構付き固体撮像素子 3 6 9は、 結像 ' 撮像素子 相対位置変更制御信号 4 3 0によって制御される光路変 更手段 3 9 6 と固体撮像素子 3 6 5により構成され、 光 学的結像情報 4 1 8は、 電気的信号により制御される光 路変更手段 3 9 6で光の向きを変えられ光学的結像情報 4 1 9 となり、 固体撮像素子 3 6 5上に結像され電気的 情報 4 2 ◦と してとりだされる。 本発明の実施例第 1 4、 1 5、 1 6図の場合と異なるのは光路変更手段 3 9 6 と 従来の固体撮像素子 3 6 5が一体化されて光路可変機構 付き固体撮像素子 3 6 9を構成していることである。 光 路変更手段 3 9 6を含む光路可変機構付き固体撮像素子 3 6 9は、 別の実施例である第 1 4、 1 5、 1 6図での 光路を変更する手段のうち機械的要素を含まないで電気 的に光路を制御可能な手段、 あるいは固体撮像素子上に 同一光電変換領域に光を誘導する微細化した 2系統以上 の光路を形成し、 それぞれの該光路を電気的信号により 選択開閉する手段等を固体撮像素子 3 6 5上に一体構成 する方法により実現可能である。 この第 1 7図の実施例 は本発明の第 1 6図までの実施例とは少し異なることに 注意が必要である。 それは第 1 6図までの実施例が、 光 学的に結像される像と該固体撮像素子との相対位置関係 を、 該固体撮像素子面と同一平面上で変化させる手段を
- - 有し該相対位置関係が異なる複数の位置で、 光学的に結 像した像情報を該固体撮像素子から電気的情報として取 り出していたのに対し、 正確に説明すればこの第 1 7図 の実施例では光路変更手段 3 9 6が固体撮像素子と一体 化したために、 光学的に結像される像と該固体撮像素子 との相対位置関係でなく、 光学的に結像される像と該固 体撮像素子の光電変換領域との相対位置関係を該固体撮 像素子上の光電変換領域面と同一平面上で変化させる手 段を有し該相対位置関係が異なる複数の位置で、 光学的 に結像した像情報を該固体撮像素子から電気的情報と し て取り出している点である。 通常は上記固体撮像素子面 と、 光電変換領域面は同一と解釈できる。 FIG. 17 shows a block diagram of still another embodiment of the present invention. Hereinafter, an embodiment of the present invention will be described in comparison with the case of FIGS. 14, 15 and 16. Optics from subject 350 Information 40 ° is converted into optical image information 418 by the optical imaging means 372, and is extracted as electrical information 422 by the solid-state imaging device 369 with the variable optical path mechanism. You. The solid-state image pickup device with a variable optical path mechanism 369 is composed of an optical path changing unit 396 controlled by an imaging device and a relative position change control signal 430 and a solid-state image pickup device 365. The optical image information 418 is turned into the optical image information 419 by changing the direction of light by an optical path changing means 396 controlled by an electric signal, and is formed on the solid-state imaging device 365. And retrieved as electrical information 42 ◦. Embodiments of the present invention The difference from the case of FIGS. 14, 15 and 16 is that the light path changing means 3 96 and the conventional solid state image pickup device 365 are integrated to form a solid state image pickup device 36 with a light path variable mechanism. 9 is composed. The solid-state imaging device 3669 with an optical path changing mechanism including the optical path changing means 3966 is a mechanical element of the optical path changing means in FIGS. 14, 15 and 16 as another embodiment. Means that can electrically control the optical path without including it, or form two or more miniaturized optical paths on the solid-state imaging device that guide light to the same photoelectric conversion area, and select each of these optical paths by an electrical signal This can be realized by a method in which opening / closing means and the like are integrally formed on the solid-state imaging device 365. It should be noted that the embodiment of FIG. 17 is slightly different from the embodiments of the present invention up to FIG. That is, the embodiments up to FIG. 16 provide a means for changing the relative positional relationship between an optically formed image and the solid-state image sensor on the same plane as the surface of the solid-state image sensor. The image information optically formed at a plurality of positions having different relative positional relationships was taken out as electrical information from the solid-state imaging device. In the embodiment shown in FIG. 7, since the optical path changing means 3996 is integrated with the solid-state image pickup device, the image is optically formed instead of the relative positional relationship between the image formed optically and the solid-state image pickup device. Means for changing the relative positional relationship between the image and the photoelectric conversion region of the solid-state imaging device on the same plane as the surface of the photoelectric conversion region on the solid-state imaging device, and at a plurality of positions having different relative positional relationships. The point is that optically formed image information is extracted as electrical information from the solid-state imaging device. Usually, it can be interpreted that the surface of the solid-state imaging device and the surface of the photoelectric conversion region are the same.
第 1 8図は、 本発明の更に別の実施例でのブロック構 成図を示す。 被写体 3 5 0からの光学的情報 4 0 0が光 学的結像手段 3 7 2により光学的結像情報 4 5 0に変換 され、 更に光分割手段 4 6 0により、 光学的結像情報 4 5 1 と他の光学的結像情報 4 5 2 に分割される。 次に該 光学的結像情報 4 5 1、 4 5 2は光切り替え手段 4 6 1 により選択され、 光学的結像情報 4 5 3となり、 固体撮 像素子 3 6 1上に結像され電気的情報 4 2 0 と してと り だされる。 こ こで光学的結像手段 3 7 2、 光分割手段 4 6 〇、 光切り替え手段 4 6 1は、 光学的結像情報 4 5 1、 4 5 2の選択に応じて最終的に固体撮像素子 3 6 1上に 結像される位置が異なるように物理的に配置することが 可能であり、 結像 · 撮像素子相対位置変更制御信号 4 3
0で光切り替え手段 4 6 1を制御すればよい。 またここ で光分割手段 4 6 0はいわゆるハーフミラ一等で容易に 実現可能であり、 光切り替え手段 4 6 1は、 いわゆる液 晶シャツ夕の組合せ等で容易に実現可能である。 また他 の実施例からも推測できるように光学的結像手段 3 7 2 を光切り替え手段 4 6 1の後方に配置する等の実施例も 可能である。 FIG. 18 shows a block diagram of still another embodiment of the present invention. The optical information 400 from the subject 350 is converted into optical image information 450 by the optical image forming means 372, and the optical image information 460 is further converted by the light dividing means 460. 5 1 and other optical imaging information 4 5 2. Next, the optical imaging information 45 1 and 45 2 are selected by the light switching means 46 1 to become optical imaging information 45 3, which is imaged on the solid-state imaging device 36 1 and electrically connected. The information is retrieved as 420. Here, the optical imaging means 37 2, the light splitting means 46 〇, and the light switching means 46 1 finally turn on the solid-state image pickup device according to the selection of the optical imaging information 45 1 and 45 2. 3 6 1 It is possible to physically arrange the image so that the image-forming position is different, and the image-forming / image sensor relative position change control signal 4 3 The light switching means 4 61 may be controlled by 0. Further, here, the light splitting means 460 can be easily realized by a so-called half mirror, and the light switching means 461 can be easily realized by a so-called liquid crystal combination. Further, as can be inferred from other embodiments, an embodiment in which the optical imaging means 372 is arranged behind the light switching means 461 is possible.
以上の実施例で説明した方法以外にも、 被写体からの 光路に光ファイバ一を使用する方法、 第 1 8図で示した ように光路を複数に分割し後で光シャッターを使用する 方法、 また結像手段として単純な光学レンズのみにとど まらず光の干渉縞現象を利用する全く異なる結像手段を 使用する方法等数多くの実施例が考えられるが、 本発明 の方法は全て光学的に結像される像と該固体撮像素子 ( 固体撮像素子上の光電変換領域) との相対位置関係を、 該固体撮像素子面と同一平面上で変化させ、 該相対位置 関係が異なる複数の位置で、 光学的に結像した像情報を 該固体撮像素子から電気的情報と して取り出すことであ る。 In addition to the method described in the above embodiment, a method using an optical fiber in an optical path from a subject, a method of dividing an optical path into a plurality of optical paths as shown in FIG. A number of embodiments can be considered, such as a method using not only a simple optical lens but also a completely different image forming means utilizing the interference fringe phenomenon of light, but the method of the present invention is all optical. The relative positional relationship between the image formed on the solid-state image sensor and the photoelectric conversion region on the solid-state image sensor is changed on the same plane as the surface of the solid-state image sensor, and a plurality of positions having different relative positional relationships are changed. This means that optically formed image information is extracted as electrical information from the solid-state imaging device.
また説明を簡単にするために固体撮像素子上の光電変 換領域と非光電変換領域を 1対 1 と し、 該相対位置移動 量を光電変換領域の繰り返しピッチの半分と しているが、 本発明の方法は特に該相対位置の移動量が上記ピッチの 半分である必要はなく、 その他の移動量であっても、 電 気的情報を合成処理する後工程を変更することにより、
本発明の目的を達成することは可能である。 For simplicity of explanation, the photoelectric conversion region and the non-photoelectric conversion region on the solid-state imaging device are one-to-one, and the relative displacement is set to half the repetition pitch of the photoelectric conversion region. In the method of the present invention, the moving amount of the relative position does not need to be half of the pitch, and even if the moving amount is other than that, the post-process for synthesizing the electronic information is changed, It is possible to achieve the object of the present invention.
また、 各実施例で該相対位置が異なる複数の位置で電 気的情報を取り出す場合、 該相対位置の最適値は解像度 の最も良くなるところであり、 読みだした電気的情報を 合成した後の合成電気的情報の高周波成分が最も増大す るところでもある。 この点に着目すれば、 本発明のシス テムでの該相対位置を最適に制御する方法と して、 該相 対位置変位量を微少変化させ、 本発明の該電気的情報を 合成した後の合成電気的情報の高周波成分を検出し積分 処理した値とを比較しながら、 該積分処理値がピーク値 になるように、 フィードパックしながら該相対位置の制 御をすることも可能である。 In the case where electrical information is taken out at a plurality of positions having different relative positions in each embodiment, the optimum value of the relative position is where the resolution becomes the best, and the combined value after combining the read electrical information is used. There are also places where the high-frequency components of electrical information increase most. Focusing on this point, as a method of optimally controlling the relative position in the system of the present invention, the relative position displacement amount is slightly changed, and after the electrical information of the present invention is synthesized. It is also possible to control the relative position while feeding back such that the integrated processing value becomes a peak value while detecting the high-frequency component of the combined electrical information and comparing it with the integrated value.
この考え方の一実施例が前述の第 2 8図、 第 2 9図であ る o One example of this concept is the aforementioned Fig. 28 and Fig. 29 o
更にまた本発明の方法の応用と して、 該結像 · 撮像素 子相対位置変更制御信号を固定しておけば本発明の方法 より低解像度の従来の光電変換装置と しても使用可能で ある。 この点に着目すれば本発明の 2回読み取り合成処 理する時間に比較して被写体自体の動きが早い場合は、 従来の光電変換装置として、 また被写体自体の動きが遅 い場合は本発明の高解像度の光電変換装置と して使用す る等、 用途によって切り替えして使用することも容易に 実現可能である。 この切り替え手段は用途により使用す る人が判断して手動でスィ ッチを切り替えるのみにとど まらず、 現在 T Vの技術と して発展しつつある E D T V
での動き補償技術等、 映像の電気的情報から映像の動き があるかどうか判断して T Vの走査方法を制御する技術 と同様に、 被写体からの電気的情報から動きを検出判断 し、 本発明の該結像 · 撮像素子相対位置変更制御信号を 制御、 自動切り替えすることも可能である。 更に切り替 えて使用する方法は、 必要に応じて水平、 垂直方向のみ 切り替える等、 組み合わせで多く あり、 本発明の方法は 前述の通りいずれも切り替えが容易であるため容易に実 現可能であり発展性は大である。 Further, as an application of the method of the present invention, if the imaging / imaging element relative position change control signal is fixed, it can be used as a conventional photoelectric conversion device having a lower resolution than the method of the present invention. is there. Focusing on this point, the conventional photoelectric conversion device is used when the movement of the subject itself is faster than the time required for the double reading and combining processing of the present invention, and the present invention is used when the movement of the subject itself is slower. Switching to use depending on the application, such as use as a high-resolution photoelectric conversion device, can be easily realized. This switching method is not limited to manual switching by the user who decides according to the application, and EDTV is currently developing as TV technology. In the same manner as the technology for controlling the scanning method of the TV by judging whether there is a motion of the video from the electrical information of the video, such as the motion compensation technology in It is also possible to control and automatically switch the imaging and relative position change control signal of the image pickup device. Furthermore, there are many combinations of switching methods to be used, such as switching only in the horizontal and vertical directions as needed. As described above, the methods of the present invention can be easily realized because the switching is easy, and the development is possible. Is great.
このように本発明のいずれの場合も取り出した電気的 信号を必要に応じて合成することが必要であるが、 この 合成処理自体の実現にあ っては従来技術での合成処理 技術としてアナログ的には C C D等により、 ディジタル 的にはメモリ (ラインメモリ、 フィールドメモリ、 フレ ームメモリ等) を使用することにより容易に実現可能で c る。 As described above, in each case of the present invention, it is necessary to combine the extracted electric signals as necessary. However, in realizing this combining process itself, analog signals are used as the combining process technology in the prior art. It can be easily realized by using a digital memory (line memory, field memory, frame memory, etc.) using a CCD or the like.
また本発明とは全く異なるが、 光学的に結像される像 と該固体半導体撮像素子との相対位置関係を該固体半導 体撮像素子面と垂直方向でピエゾ素子等により変化させ、 電気的情報を取り出し判断することにより、 光学的なピ ン ト合わせを自動でおこなういわゆるォ一 トフォーカス 方式のビデオカメラが知られている。 本発明の方法は、 上記のいわゆるピエゾオー トフォーカス方式と制御 (判 断) 部分は一部と共用可能であり、 組み合わせることも 容易に可能である。
次に該光電変換装置で得られた電気的情報を記録する 方法、 合成方法について説明する。 Although completely different from the present invention, the relative positional relationship between the optically formed image and the solid-state semiconductor image pickup device is changed by a piezo element or the like in a direction perpendicular to the solid-state semiconductor image pickup device surface. 2. Description of the Related Art A so-called auto-focus video camera that automatically performs optical focusing by extracting and judging information is known. In the method of the present invention, the so-called piezo-autofocus method and the control (judgment) part can be shared with a part, and can be easily combined. Next, a method for recording electrical information obtained by the photoelectric conversion device and a synthesis method will be described.
第 2 4図は本発明の一実施例である映像記録装置 A、 7 0 0 と映像再生装置 7 0 1 と表示装置 7 0 2で構成され る撮像一記録一再生一表示システムのブロック構成図で あ Όο FIG. 24 is a block diagram of an image-recording-recording-reproducing-display system composed of a video recording device A, 700, a video reproducing device 701, and a display device 702 according to an embodiment of the present invention.あ Όο
映像記録装置 Αは該光電変換装置 7 0 5 と記録装置 7 1 〇からなる。 該光電変換装置 7 0 5内での光学的に結像 される像と該固体半導体撮像素子との該相対位置関係が 異なる複数の位置での該電気的情報 4 2 0は記録装置 Ί 1 0に入力され記録される。 記録装置 7 1 0は半導体メ モリ、 または磁気ディスク、 磁気テープ等の磁気媒体等 を使用する記録装置である。 磁気ディ スクを使用する記 録装置ならば、 映像記録装置 Aは映像記録可能ないわゆ る電子スチルカメラを構成し、 磁気テープを使用する記 録装置ならば、 映像記録装置 Aは映像記録可能ないわゆ るビデオカメラを構成することが可能である。 但し本発 明のこの実施例での方式は従来のいわゆる電子スチルカ メラあるいはビデオカメラと異なるのは、 記録される電 気的情報が光学的に結像される像と該固体半導体撮像素 子との該相対位置関係が異なる複数の ίί' Ϊでの該電気的 情報 4 2 0であり、 該電気的情報 4 2 0が合成される前 に記録されることに特徴がある。 このため記録装置で 定められた記録媒体の情報充填密度、 記録フォーマッ ト
等で制限される記憶容量に対して、 高解像度な映像情報 を記録することが可能である。 従来の記録フォーマッ ト のまま、 該栢対位置関係が異なる複数の位置の数だけ記 録媒体の領域を多く使えば、 読み取り間引き等の読み取 り方法を工夫することにより従来フォーマツ トと共用の 記録装置とすることも可能である。 The video recording device な る includes the photoelectric conversion device 705 and the recording device 71 7. The electrical information 420 at a plurality of positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different from that of the solid-state semiconductor imaging device is determined by a recording device Ί10 Is entered and recorded. The recording device 7100 is a recording device that uses a semiconductor memory or a magnetic medium such as a magnetic disk or a magnetic tape. If it is a recording device that uses a magnetic disk, video recording device A constitutes a so-called electronic still camera that cannot record video, and if it is a recording device that uses magnetic tape, video recording device A can record video. It is possible to construct any kind of video camera. However, the method of this embodiment of the present invention is different from a conventional so-called electronic still camera or video camera in that an image in which recorded electronic information is optically formed and the solid-state semiconductor imaging device are used. The electrical information 420 in a plurality of {'} s having different relative positional relationships is recorded before the electrical information 420 is synthesized. For this reason, the information filling density of the recording medium and the recording format specified by the recording device It is possible to record high-resolution video information for the storage capacity limited by the above. If the area of the recording medium is used as many as the number of positions having different positional relations in the conventional recording format, the recording format shared with the conventional format can be improved by devising a reading method such as reading thinning. It can also be a device.
映像再生装置 7 0 1は読み取り手段 7 3 0と合成手段 Ί 2〇からなる。 映像記録装置 A内の記録装置 7 1 0から の映像情報 7 7 0は読み取り手段 7 3 0で読み取られる。 光学的に結像される像と該固体半導体撮像素子との該相 対位置関係が異なる複数の位置での該電気的情報 4 2 0 に対応する読み取り電気的信号 7 8 ◦は合成手段 7 2 0 で通常の電気的映像情報 7 9 ◦に合成加工される。 合成 された通常の電気的映像情報 7 9 0は表示装置 7 0 2に より映像化される。 表示装置 7 ◦ 2は通常のテレビ等で める。 The video reproducing device 701 comprises a reading means 730 and a synthesizing means {2}. The video information 770 from the recording device 710 in the video recording device A is read by the reading means 730. The read electrical signal 7 8 ◦ corresponding to the electrical information 4 20 at a plurality of positions where the relative positional relationship between the optically formed image and the solid-state semiconductor imaging device is different is obtained by combining means 7 2 At 0, it is synthesized into normal electrical image information 79 °. The synthesized ordinary electric video information 790 is visualized by the display device 702. Display device 7 ◦ 2 can be mounted on a normal television.
記録装置 7 1 0が磁気媒体等を使用する記録装置である 場合は、 記録及び読み取りは通常いわゆる磁気ヘッ ドで 行なわれる。 記録装置 7 1 0が半導体メモリの場合は記 録及び読みだしは通常いわゆるリー ドライ ト信号を制御 することでおこなわれる。 When the recording device 7 10 is a recording device using a magnetic medium or the like, recording and reading are usually performed with a so-called magnetic head. When the recording device 7 10 is a semiconductor memory, recording and reading are usually performed by controlling a so-called read-write signal.
映像記録装置 A、 7 0 0 と映像再生装置 7 0 1 とを一体 化すれば、 いわゆる記録再生可能な電子スチルカメラ、 ビデオカメラ等を構成することが可能である。 By integrating the video recording devices A and 700 with the video reproducing device 701, it is possible to constitute a so-called recording / reproducing electronic still camera, video camera, or the like.
第 2 5図は本発明の別の一実施例である映像記録装置 B、
7 0 3 と読み取り手段 7 3 1 と表示装置 7 0 2で構成さ れる撮像一記録一再生一表示システムのプロック構成図 である。 この場合第 2 4図での実施例と異なるのは、 第FIG. 25 shows a video recording apparatus B according to another embodiment of the present invention. FIG. 3 is a block diagram of an imaging-recording-reproducing-display system composed of 703, reading means 731, and a display device 702. In this case, the difference from the embodiment in FIG.
2 4図では該光電変換装置からの該相対位置が異なる複 数の位置での該電気的情報を記録し、 記録された該電気 的情報を読みだし合成するのに対し、 第 2 5図では該光 電変換装置からの該相対位置が異なる複数の位置での該 電気的情報を記録する前に合成する手段を配置し、 該合 成電気的情報を記録することである。 In FIG. 24, the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device is recorded, and the recorded electrical information is read out and synthesized, whereas in FIG. 25, Before recording the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device, a means for combining the electrical information is disposed, and the combined electrical information is recorded.
映像記録装置 Bは該光電変換装置 7 0 5 と合成手段 7 2 1 と記録装置 7 1 1からなる。 該光電変換装置 7 0 5内 での光学的に結像される像と該固体半導体撮像素子との 該相対位置関係が異なる複数の位置での該電気的情報 4 2 〇は合成手段 7 2 1により合成され通常の映像信号 7 9 1 となり、 記録装置 7 1 1 に入力され記録される。 こ の場合記録される前に該電気的情報 4 2 0は合成された ' 信号となるため、 記録装置 7 1 1は従来の記録装置を使 用することも可能である。 記録装置 7 1 1からの映像情 報 7 7 1は読み取り手段 7 3 1で読み取られ、 通常の電 気的映像情報 8 ◦ ◦ となり、 表示装置 7 0 2 により映像 化される。 この場合もいわゆる記録再生可能な電子スチ ルカメラ、 ビデオカメラ等を構成することが可能であり、 該光電変換装置 7 0 5 と合成手段 7 2 1以降の信号の処 理技術は従来の技術でも可能である。 The video recording device B includes the photoelectric conversion device 705, the synthesizing means 721, and the recording device 711. The electrical information 42 at multiple positions where the relative positional relationship between the optically formed image in the photoelectric conversion device 705 and the solid-state semiconductor imaging device is different is obtained by combining means 721. Are combined into a normal video signal 791, which is input to the recording device 711 and recorded. In this case, since the electrical information 420 becomes a synthesized signal before being recorded, the recording device 71 1 can use a conventional recording device. The video information 7 71 from the recording device 7 1 1 is read by the reading means 7 3 1, becomes normal electrical video information 8 ◦, and is visualized by the display device 7 0 2. In this case, it is also possible to constitute a so-called recordable / reproducible electronic still camera, video camera, or the like, and the conventional technology can process the signals of the photoelectric conversion device 705 and the synthesizing means 721 and thereafter. It is.
本発明のいずれの場合も取り出した電気的信号を必要
に応じて合成することが必要であるが、 この合成処理自 体の実現にあたっては従来技術での合成処理技術と して アナログ的には C C D等により、 ディジタル的にはメモ リ (ラインメモリ、 フィール ドメモリ、 フレームメモリ 等) を使用することにより容易に実現可能である。 次に 本発明の実施例第 24図、 第 25図での合成手段 72 0、In each case of the present invention, the extracted electrical signal is required It is necessary to perform the synthesis in accordance with the conditions. However, in order to realize the synthesis processing itself, the synthesis processing technology in the prior art is analog by CCD or the like, and digitally by memory (line memory, field memory). Memory, frame memory, etc.). Next, in Example 24 of the present invention, the synthesizing means 720 in FIGS. 24 and 25,
72 1の実施例を第 26図、 第 2 7図で説明していく。 第 2 6図は第 24図の 72 0、 第 2 5図の 72 1に対 応する合成手段 722の内部ブロック構成図である。 入 力信号 8 10、 出力信号 8 1 6ともにアナログ電気信号 の場合とする。 The embodiment of 721 will be described with reference to FIGS. 26 and 27. FIG. 26 is an internal block diagram of the combining means 722 corresponding to 720 in FIG. 24 and 721 in FIG. Input signal 810 and output signal 816 are both analog electric signals.
入力信号 810は第 26図の 780、 第 2 5図の 42 0 に対応し、 出力信号 81 6は第 2 6図の 7 9 0、 第 2 5 図の 79 1に対応する。 The input signal 810 corresponds to 780 in FIG. 26 and 420 in FIG. 25, and the output signal 816 corresponds to 790 in FIG. 26 and 791 in FIG.
入力信号 81 0は遅延回路 74◦により遅延され合成部 75 0に、 入力信号 81 0と遅延入力信号 8 1 1とが入 力され、 合成出力信号 8 1 6となる。 ここで遅延回路 7 4〇の遅延時間を、 光学的に結像される像と該固体半導 体撮像素子との相対位置変化時間と一致させれば、 撮像 素子面上の結像される像を連続してと りだすことと同様 の合成出力信号 8 1 6をとりだすことが可能である。 The input signal 810 is delayed by the delay circuit 74 °, and the input signal 810 and the delayed input signal 811 are input to the synthesizing unit 750 to become the synthesized output signal 816. Here, if the delay time of the delay circuit 74 is matched with the relative position change time between the optically formed image and the solid-state semiconductor image pickup device, the image formed on the image pickup device surface is obtained. It is possible to take out the same composite output signal 8 16 as that obtained by continuously taking out.
更に第 27図は第 26図と同様に、 第 24図の 72 0、 第 2 5図の 72 1に対応する合成手段 72 3の別の実施 例の内部ブロック構成図であり、 入力信号 8 1 0、 出力 信号 8 1 5はともに第 2 6図の場合と同じアナログ電気
信号であるが、 一度 AD変換器によりディ ジタル信号に 変換して遅延、 合成等の信号処理を行い、 最後に D A変 換器により再度アナログ電気信号に戻す方法である。 入力信号 8 1 0は第 24図の 78 0、 第 2 5図の 420 に対応し、 出力信号 8 1 5は第 24図の 7 9 ◦、 第 2 5 図の 7 9 1に対応する。 入力信号 8 1 0は AD変換器 727 is an internal block diagram of another embodiment of the synthesizing means 723 corresponding to 720 in FIG. 24 and 721 in FIG. 25, similarly to FIG. 0, Output signal 8 15 are the same analog electric as in Fig. 26 This is a method in which the signal is converted into a digital signal once by an AD converter, signal processing such as delay and synthesis is performed, and finally the signal is converted back into an analog electric signal by a DA converter. The input signal 8110 corresponds to 780 in FIG. 24 and 420 in FIG. 25, and the output signal 815 corresponds to 79 ° in FIG. 24 and 791 in FIG. Input signal 8 1 0 is AD converter 7
60によりディ ジタル信号 8 1 2に変換され、 更にシフ トレジスタ 74 1により遅延ディ ジ夕ル信号 8 1 3とな る。 ディジタル信号 8 1 2及び遅延ディジタル信号 8 1 3は合成部 7 5 1により、 処理されディジタル合成信号 8 1 4となる。 更にディジタル合成信号 8 1 4は D A変 換器 7 6 1により、 アナログの電気出力信号 8 1 5 とな る。 The signal is converted into a digital signal 812 by 60, and further becomes a delayed digital signal 813 by shift register 741. The digital signal 8 12 and the delayed digital signal 8 13 are processed by the synthesizing unit 751 to become a digital synthesized signal 8 14. Further, the digital composite signal 814 is converted into an analog electric output signal 815 by the DA converter 761.
また第 24図、 第 2 5図での記録装置 7 1 0、 7 1 1 はアナログ信号記録だけでなくデジタル信号記録でも同 様に実現可能である。 このことを考慮すると第 2 6、 2 7図の場合の実施例での合成手段は入力、 出力信号とも にアナログ電気信号で示してあるが、 合成手段 72 0、 24 and 25 can be realized not only by analog signal recording but also by digital signal recording. Taking this into consideration, the combining means in the embodiment shown in FIGS. 26 and 27 are shown as analog electric signals for both the input and output signals.
72 1の別の実施例として入力、 出力がアナログ、 ディ ジタルの組合せも可能である。 As another embodiment of the above, a combination of analog and digital inputs and outputs is also possible.
また、 ディ ジタル信号の合成手段は近年 D S P (ディ ジタルシグナルプロセ、ソサ) を使用することによつても 可能である。 この場合第 2 7図での 74 1のシフ ト レジ スタ、 7 5 1の合成部は D S Pに置き換えることができ る。 また D S Pを使用することにより、 本発明の画像合
成処理以外の他の画像信号処理も同時に可能であり、 例 えばビデオカメラでの被写体の明るさ (照度) に応じて、 輝度信号の輪郭補正 (ェンハンス) 量や色の濃さ (飽和 度) などをきめ細かく設定し処理することが可能である。 更にホワイ トパランス調整、 自動逆光補正、 電子ズーム 等の処理も可能であり、 電子ズーム処理を行う場合での 本発明の方法も使用したビデオカメラの実施例を第 3 0 図に示す。 In recent years, digital signal synthesizing is also possible by using DSP (Digital Signal Processor, Sosa). In this case, the shift register 741 in FIG. 27 and the synthesizing section 751 can be replaced with a DSP. Also, by using a DSP, the image Image signal processing other than image processing is also possible at the same time. For example, depending on the brightness (illuminance) of the subject in a video camera, the contour correction (enhance) of the luminance signal and the color density (saturation) Etc. can be set and processed finely. Further, processing such as white balance adjustment, automatic backlight correction, and electronic zoom is also possible. FIG. 30 shows an embodiment of a video camera using the method of the present invention when performing electronic zoom processing.
被写体からの光学的情報 9 2 0はズーム機能付き光学的 結像手段 9 0 0を通過し、 光学的結像情報 9 2 1は固体 撮像素子 9 0 1上に像を結ぶ。 固体撮像素子 9 0 1から 取り出された電気的情報 9 2 3は A D変換器 9 0 2によ りディジタル信号 9 2 4に変換され D S P 9 0 3に画像 処理された信号 9 2 5は D A変換器 9 0 4によって再度 アナログ的な面像信号 9 2 6 となって取り出される。 こ こで外部制御信号 9 3 3はシャッタースピー ド、 ズーム 倍率等の制御信号であり、 外部入力制御部 9 0 7に入力 され、 個々の制御信号 9 3 はマイ コン 9 0 8に入力さ れる。 ズーム機能付き光学的結像手段 9 ◦ ◦はマイコン 9 〇 8により、 ズーム倍率、 焦点調整等が光学系制御信 号群 9 2 7により制御される。 またマイコン 9 0 8から の結像 · 撮像素子相対位置制御信号 9 3◦により、 結像 . 撮像素子相対位置変更手段 9 0 5はズーム機能付き光 学的結像手段 9 0 0 と固体撮像素子 9 0 1の相対位置を 相対位置制御信号 9 2 8により制御する。 本発明の画像
合成処理はマイ コン 908からの命令により D S P 9 0 3により処理される。 また更に、 マイ コン 9 08からの 固体撮像素子走査制御信号群 9 3 1は、 固体撮像素子走 査部 9 0 6により走査制御信号 9 2 9 となり、 固体撮像 素子 9 ◦ 1の読み取り走査の制御をおこなう。 この読み 取り走査の制御によりシャッタースピー ドの制御、 電子 ズーム制御等が行なわれるが、 ここで電子ズームの方法 について、 説明する。 一般的なズーム方法は光学レン ズ群の組合せによって、 固体撮像素子上に結象される象 の倍率を変化させるのにたいして、 電子ズームの方法と は、 固体撮像素子上に結象される象のなかで特定の領域 をとりだして拡大する方法である。 こう した画像処理は、 固体撮像素子から読みだされた画像信号をディジタルシ グナルプロセッサ D S P内部で画面の一部を拡張、 加工 することでも処理可能であるが、 ここでは固体撮像素子 からの信号読み取り時に水平、 垂直方向での走査方法を 変更する方法と して、 画面の中央部分を 2倍に拡大する 場合について具体的に説明する。 この場合固体撮像素子 走査部 9 06からの読み取り走査の制御方法を、 固体撮 像素子 9 01の画面の縦方向と横方向ともに画面の半数 の画素で囲まれた中央の 1ノ4の画面のみを上下、 左右 向に走査するようにすれば変更すれ よい。 この時、 単純にズーミング (伸長) した画面では画素間に欠落が 生じるが、 ズーミング時のみ結像 · 撮像素子相対位置変 更手段 9 05を動作させ、 D S P 9 0 3により画像合成
処理することにより解像度を悪化させないことが可能で ある。 ここで一般的な電子ズームでは、 垂直と水平の欠 けた画素の処理方法として、 本発明の方法ではなく、 欠 けた画素データと して隣接した領域の画素データから平 均したものを D S Pで画像処理し挿入補間する方法も可 能であるが、 ズーム倍率が高くなると当然解像度は悪化 してしまう。 このため電子ズーム倍率が一定以上になる 場合のみ本発明の方法を組み合わせ動作させることによ り解像度を悪化させないことも可能である。 この場合、 本発明の方法を一定条件の場合のみ使用することにより、 動作電流の低減をはかることも可能である。 Optical information 920 from a subject passes through an optical imaging means 900 having a zoom function, and the optical imaging information 921 forms an image on a solid-state imaging device 901. The electrical information 923 extracted from the solid-state imaging device 901 is converted to a digital signal 924 by the AD converter 902, and the signal 925 processed by the DSP 903 is DA converted. The image is again converted into an analog surface image signal 926 by the unit 9104. Here, the external control signals 933 are control signals for shutter speed, zoom magnification, etc., are input to the external input control section 907, and the individual control signals 933 are input to the microcomputer 908. . The optical imaging means with a zoom function 9 ◦ ◦ is controlled by the microcomputer 9 〇 8, and the zoom magnification and the focus adjustment are controlled by the optical system control signal group 927. In addition, the imaging device relative position changing means 905 is formed by the imaging and imaging device relative position control signal 93 ° from the microcomputer 908, and the optical imaging device 900 with a zoom function is connected to the solid-state imaging device. The relative position of 901 is controlled by the relative position control signal 928. Images of the present invention The synthesizing process is performed by the DSP 903 according to an instruction from the microcomputer 908. Further, the solid-state image sensor scanning control signal group 931 from the microcomputer 908 becomes a scanning control signal 929 by the solid-state image sensor scanning unit 906, and controls the reading scan of the solid-state image sensor 9 Perform The control of the reading scan controls the shutter speed, the electronic zoom control, and the like. Here, the method of the electronic zoom will be described. A general zoom method is to change the magnification of an elephant imaged on a solid-state image sensor by a combination of optical lens groups. It is a method of extracting and expanding a specific area. Such image processing can also be processed by expanding and processing a part of the screen inside the digital signal processor DSP on the image signal read from the solid-state image sensor, but here the signal from the solid-state image sensor is read As a method of sometimes changing the scanning method in the horizontal and vertical directions, a case in which the center portion of the screen is enlarged twice as much will be specifically described. In this case, the method of controlling the reading scan from the solid-state imaging device scanning section 906 is limited to the center 1--4 screen surrounded by half the pixels of the solid-state imaging device 9001 in both the vertical and horizontal directions. This can be changed by scanning in the vertical and horizontal directions. At this time, pixels are lost between pixels on a screen that is simply zoomed (expanded). However, only during zooming, the image sensor and relative position change means 905 are operated, and the image is synthesized by the DSP 903. It is possible to prevent the resolution from deteriorating by processing. Here, in a general electronic zoom, as a processing method of a vertical and a horizontal missing pixel, the method of the present invention is not used, and an image obtained by averaging the pixel data of an adjacent area as the missing pixel data using a DSP is used. A method of processing and inserting interpolation is also possible, but as the zoom magnification increases, the resolution naturally deteriorates. For this reason, the resolution can be prevented from deteriorating by operating the method of the present invention in combination only when the electronic zoom magnification exceeds a certain value. In this case, the operating current can be reduced by using the method of the present invention only under certain conditions.
また本発明の方法での実施例第 2 4図の場合での記録 装置について本発明の光電変換装置と切り離して使用方 法を検討してみると、 入力が通常の映像信号でも、 時間 的に直列な映像情報を複数のサンプリング位置で分割し 複数の映像情報とする手段を記録装置の前段におく こと ' により、 記録装置に別々に順次記録することを特徴とす る記録方式も考えることができる。 When the recording apparatus in the embodiment shown in FIG. 24 in the method of the present invention is used separately from the photoelectric conversion apparatus of the present invention to examine the usage thereof, even if the input is a normal video signal, the recording apparatus is temporally difficult. By arranging means for dividing serial video information at multiple sampling positions to generate multiple video information at the front of the recording device, it is also possible to consider a recording method characterized by recording separately and sequentially in the recording device. it can.
また、 本発明は被写体からの光を電気的情報に変換する ものであるが、 全く逆の発想をすれば電気的情報を表示 する装置において、 表示部を同様に動かすことにより、 解像度を上げる方法を考えられる。 これは表示装置を表 示面方向で移動させながら、 時間的に直列な映像情報を 複数のサンプリング位置で分割された複数の映像情報を 交互に表示することを特徴とする表示装置と して実現可
In addition, the present invention converts light from a subject into electrical information. However, if the idea is completely reversed, a method for increasing the resolution by similarly moving a display unit in a device that displays electrical information is also considered. Can be considered. This is realized as a display device characterized in that, while moving the display device in the direction of the display surface, a plurality of video information obtained by dividing temporally serial video information at a plurality of sampling positions is alternately displayed. Yes
Claims
能であり、 具体的には液晶を使用するプロジェクタで一 次表示部である液晶パネルを移動させる方式が考えられ る。 このように本発明は応用発展性が大きい。 Specifically, a system that moves the liquid crystal panel, which is the primary display unit, using a projector that uses liquid crystal can be considered. Thus, the present invention has a large application development potential.
【産業上の利用可能性】 [Industrial applicability]
この発明は光学的結像手段と該結像した像を電気的情 報に変換する固体撮像素子とを有する光電変換装置、 ま た映像記録装置、 再生装置に適用できるものであり、 一 次元ラインセンサー、 二次元エリアセンサ一等にこだわ らず、 ファックス、 ビデオカメラ、 電子スチルカメラ等 で高解像度が要求される分野で必要不可欠なものである。
The present invention is applicable to a photoelectric conversion device having an optical imaging means and a solid-state imaging device for converting the formed image into electrical information, as well as a video recording device and a reproducing device. It is indispensable in fields where high resolution is required for faxes, video cameras, electronic still cameras, etc., not limited to sensors and two-dimensional area sensors.
請求の範囲 The scope of the claims
( 1 ) 光学的結像手段と、 その結像を電気的情報に変換 する固体半導体撮像素子とを有する光電変換装置におい て、 該結像と該固体半導体撮像素子との相対の位置の関 係を、 該固体半導体撮像素子面と同一平面上で変化させ る手段と、 該栢対位置関係が異なる複数の位置での、 該 結像を該固体半導体撮像素子から電気的情報として取り 出す手段と、 を有することを特徴とする光電変換装置。(1) In a photoelectric conversion device having optical imaging means and a solid-state semiconductor imaging device that converts the image into electrical information, the relationship between the relative position between the imaging and the solid-state semiconductor imaging device Means for changing the position of the solid-state image sensor on the same plane as the surface of the solid-state semiconductor image sensor, and means for extracting the image at a plurality of positions having different positional relations as electrical information from the solid-state semiconductor image sensor. A photoelectric conversion device comprising:
( 2 ) 請求の範囲 1において、 前記相対位置関係を変化 させる手段による変化量が前記固体半導体撮像素子の画 素ピッチの約 2分の 1であることを特徵とする光電変換 ( 3 ) 請求の範囲 1において、 ·前記電気的情報に基ずい て、 前記相対位置関係を変化させる手段を制御すべき制 御手段を有することを特徴とする光電変換装置。 (2) The photoelectric conversion device according to (1), wherein the amount of change by the means for changing the relative positional relationship is about one half of a pixel pitch of the solid-state semiconductor imaging device. The photoelectric conversion device according to range 1, further comprising: control means for controlling the means for changing the relative positional relationship based on the electrical information.
( ) 請求の範囲 1ないし 3のいずれか一項において、 前記相対位置の関係を変化させる手段としてピエゾ素子 を使用してなることを特徴とする光電変換装置。 (4) The photoelectric conversion device according to any one of claims 1 to 3, wherein a piezo element is used as the means for changing the relationship between the relative positions.
( δ ) 請求の範囲 1ないし 3のいずれか一項において、 前記相対位置の関係を変化させる手段は動作または非動 作に切り換え可能な手段であることを特徵とする光電変 (δ) The photoelectric conversion device according to any one of claims 1 to 3, wherein the means for changing the relationship between the relative positions is means capable of switching between operation and non-operation.
( 6 ) 請求の範囲 1記載の光電変換装置と、 前記光電変 換装置からの前記相対位置が異なる複数の位置での前記
電気的情報を記録する記録手段とを有するこ とを特徴と する映像記録装置。 (6) The photoelectric conversion device according to claim 1, wherein the relative position from the photoelectric conversion device is different at a plurality of positions. A video recording device comprising: a recording unit for recording electrical information.
( 7 ) 請求の範囲 6において、 前記記録手段は前記相対 位置が異なる複数の位置単位での電気的情報と して記録 する手段であることを特徴とする映像記録装置。 (7) The video recording apparatus according to claim 6, wherein the recording means is means for recording as a piece of electrical information in a plurality of position units having different relative positions.
( 8 ) 請求の範囲 6ないし 7記載の映像記録装置と、 前 記映像記録装置の前記記録手段に記録された前記電気的 情報を読みだし合成する合成手段を有することを特徴と する映像記録再生装置。 (8) A video recording / reproducing device comprising: the video recording device according to claims 6 to 7; and a synthesizing unit that reads and synthesizes the electrical information recorded in the recording unit of the video recording device. apparatus.
( 9 ) 請求の範囲 1記載の光電変換装置と、 前記光電変 換装置からの前記相対位置が異なる複数の位置での前記 電気的情報を合成する手段と、 その合成電気的情報を記 録する記録手段とを有することを特徴とする映像記録再
(9) The photoelectric conversion device according to claim 1, means for synthesizing the electrical information at a plurality of positions having different relative positions from the photoelectric conversion device, and recording the synthesized electrical information. Recording means, comprising: recording means.
Priority Applications (1)
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PCT/JP1991/000781 WO1992022982A1 (en) | 1991-06-11 | 1991-06-11 | Photoelectric conversion device, image recording device and image recording/reproducing device |
Applications Claiming Priority (1)
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PCT/JP1991/000781 WO1992022982A1 (en) | 1991-06-11 | 1991-06-11 | Photoelectric conversion device, image recording device and image recording/reproducing device |
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JPS60223388A (en) * | 1984-04-20 | 1985-11-07 | Victor Co Of Japan Ltd | Solid-state image pickup device |
JPS61173586A (en) * | 1985-01-29 | 1986-08-05 | Matsushita Electric Ind Co Ltd | Image input device |
JPS61264873A (en) * | 1985-05-20 | 1986-11-22 | Fujitsu General Ltd | Solid-state image pickup device |
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