WO1991020098A3 - Base de tranche pour dispositifs a semiconducteurs au carbure de silicium incorporant des substrats en alliage et leur procede de fabrication - Google Patents

Base de tranche pour dispositifs a semiconducteurs au carbure de silicium incorporant des substrats en alliage et leur procede de fabrication Download PDF

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Publication number
WO1991020098A3
WO1991020098A3 PCT/US1991/003935 US9103935W WO9120098A3 WO 1991020098 A3 WO1991020098 A3 WO 1991020098A3 US 9103935 W US9103935 W US 9103935W WO 9120098 A3 WO9120098 A3 WO 9120098A3
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WO
WIPO (PCT)
Prior art keywords
silicon carbide
carbide
substrate
single crystal
semiconductor devices
Prior art date
Application number
PCT/US1991/003935
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English (en)
Other versions
WO1991020098A2 (fr
Inventor
Walter Precht
Richard Koba
Donald Kupp
Delwyn Cummings
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of WO1991020098A2 publication Critical patent/WO1991020098A2/fr
Publication of WO1991020098A3 publication Critical patent/WO1991020098A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Base de tranche de semiconducteurs (10) adapté à la fabrication de dispositifs dans du carbure de silicium, comprenant un substrat monocristallin (14), lequel est un alliage au carbure de métal de transition ayant une structure de cristal cubique et une couche de revêtement au carbure en 3C-silicium monocristallin (12) sans polytype déposé de manière épitaxiale sur le substrat. Le substrat est de préférence un alliage d'au moins deux des éléments suivants: carbure de titane, carbure de tantale, carbure de vanadium et carbure de niobium, le paramètre de treillis différant du carbure de 3C-silicium d'au moins environ 1 %. L'emploi d'alliages au carbure de métal de transition permet la préparation de grands substrats monocristallins exempts de fissures, de dislocations ou d'autres défauts, adaptés à un dépôt épitaxial de carbure de 3C-silicium. On peut déposer la couche de revêtement épitaxial au carbure de 3C-silicium à l'aide de n'importe quelle technique appropriée, y compris le dépôt en phase gazeuse par procédé chimique et l'évaporation réactive, et on peut le doper à l'aide de dopant de type n ou p. Le carbure de 3C-silicium est utile dans la fabrication de dispositifs à semiconducteurs utilisés à haute température, à des puissances élevées et dans des environnements corrosifs.
PCT/US1991/003935 1990-06-04 1991-06-04 Base de tranche pour dispositifs a semiconducteurs au carbure de silicium incorporant des substrats en alliage et leur procede de fabrication WO1991020098A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US532,906 1990-06-04
US07/532,906 US5043773A (en) 1990-06-04 1990-06-04 Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates

Publications (2)

Publication Number Publication Date
WO1991020098A2 WO1991020098A2 (fr) 1991-12-26
WO1991020098A3 true WO1991020098A3 (fr) 1992-02-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1991/003935 WO1991020098A2 (fr) 1990-06-04 1991-06-04 Base de tranche pour dispositifs a semiconducteurs au carbure de silicium incorporant des substrats en alliage et leur procede de fabrication

Country Status (2)

Country Link
US (1) US5043773A (fr)
WO (1) WO1991020098A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
US5190890A (en) * 1990-06-04 1993-03-02 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
CA2092215A1 (fr) * 1992-03-24 1993-09-25 Shinichi Shikata Dispositif semiconducteur
US5374412A (en) * 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
JP3086556B2 (ja) * 1993-02-09 2000-09-11 株式会社神戸製鋼所 半導体ダイヤモンド層上の耐熱性オーミック電極及びその形成方法
US5529949A (en) * 1994-03-17 1996-06-25 Kent State University Process of making thin film 2H α-sic by laser ablation
US5784187A (en) * 1996-07-23 1998-07-21 Lucent Technologies Inc. Wafer level integration of an optical modulator and III-V photodetector
SE9602993D0 (sv) * 1996-08-16 1996-08-16 Abb Research Ltd A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
JP4144047B2 (ja) * 1997-08-20 2008-09-03 株式会社デンソー 半導体基板の製造方法
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6562183B1 (en) * 1999-04-07 2003-05-13 Ngk Insulators, Ltd. Anti-corrosive parts for etching apparatus
SE525574C2 (sv) 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
US9275861B2 (en) 2013-06-26 2016-03-01 Globalfoundries Inc. Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures
US20170248275A1 (en) * 2014-10-03 2017-08-31 Entegris, Inc. Pressure-regulated gas supply vessel
DE102017000528A1 (de) * 2017-01-20 2018-07-26 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. Verfahren zur Bearbeitung einer Halteplatte, insbesondere für einen Clamp zur Waferhalterung
CN111295465B (zh) * 2017-09-14 2022-12-09 弗萨姆材料美国有限责任公司 用于沉积含硅膜的组合物和方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US4738937A (en) * 1985-10-22 1988-04-19 Hughes Aircraft Company Method of making ohmic contact structure
US4767666A (en) * 1985-05-23 1988-08-30 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
US4916088A (en) * 1988-04-29 1990-04-10 Sri International Method of making a low dislocation density semiconductor device
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
US4568792A (en) * 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
US4616672A (en) * 1986-01-27 1986-10-14 General Motors Corporation Pressure relief and drain valve
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US4767666A (en) * 1985-05-23 1988-08-30 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
US4738937A (en) * 1985-10-22 1988-04-19 Hughes Aircraft Company Method of making ohmic contact structure
US4916088A (en) * 1988-04-29 1990-04-10 Sri International Method of making a low dislocation density semiconductor device
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide

Also Published As

Publication number Publication date
WO1991020098A2 (fr) 1991-12-26
US5043773A (en) 1991-08-27

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