Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
  • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
  • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
  • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
  • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

• the present invention provides a sputtering target capable of easily and uniformly forming a film resistor having high specific resistance and excellent heat resistance and corrosion resistance, and a film resistor formed using the sputtering target. And a thermal printer head using the film resistor.
• a thermal transfer recording device using a thermal printer head taking advantage of low noise and low maintenance.
• tantalum nitride has conventionally been frequently used as a stable material as a membrane resistor that generates heat and melts a print medium.
• Ta-N based films are generated by reactive sputtering of Ta target in N 2 atmosphere, and the specific resistance increases as the N content increases, but when used as a heating element
• Ta 2 N has been generally used in terms of reliability and stability.
• the specific resistance of Ta 2 N itself is about 200 Q cra, and there is a limit to the upper limit even if the film is made extremely thin and elongated to increase the resistance. .
• the specific resistance of Ta 2 N itself is about 200 Q cra, and there is a limit to the upper limit even if the film is made extremely thin and elongated to increase the resistance.
• problems In order to improve such disadvantages, attempts have been made to increase the resistance value by forming the film resistor in a meander shape and increasing the effective length per unit area.
• the reactive sputtering method is used as the production method, but the amount of reactive gas introduced into the vacuum chamber is very small, and strict production control is required to control this. Is required.
• a high resistivity film is obtained by using a target in which a heating resistor such as TiC is embedded in a concave portion of a quartz disk. Although it has excellent oxidation resistance, it has the drawback that film composition is difficult to control, and the sheet resistance in the substrate tends to vary greatly.
• the - is the main Tsu preparative thin, Ta-Si 0 2 resistive film or the like have been into practical use, for example, Ta target Bok and Si O.
• the film is formed by multi-element sputtering using a target.
• the Ta-Si0 2 resistive film in order to sputter discharge angle between the Ta and Si differs greatly, depending subtle differences in spatter conditions likely to occur Bara' key on the composition of the target and film, film of the composition There was a problem that control was difficult.
• the composition in the film is likely to be non-uniform, so that the sheet resistance in the film tends to vary, and the reproducibility of the resistance value is poor.
• the present invention has been made in consideration of the above points, and provides a sputtering target capable of forming a high-resistivity film having a uniform composition with a small composition deviation from the evening target. It is intended to provide. Another object of the present invention is to provide a film resistor which is excellent in heat resistance and corrosion resistance, suppresses variations in sheet resistance in the film, and realizes a high ratio and resistance. ing. Further, another object of the present invention is to improve the printing resolution by using the above-mentioned membrane resistor. The objective is to provide a thermal printer head that is capable of improving speed and responding to high-speed operation.
• the present inventors have made extensive investigations about the film resistor is used as a heating element or the like of the thermal pre Ntae' de, Nb-Si 0 2 type film resistor with a high resistance, and heat resistance and corrosion resistance excellent, also Mii that the use of composite target of silicon oxide containing Nb as the oxide Ya silicide, which can significantly improve the reproducibility of ⁇ configuration of the Nb- Si 0 2 based film resistor And
• the sputtering target of the present invention is based on the above-described findings, and contains an oxide containing niobium and a silicide containing niobium, with the balance being substantially the rest. It is characterized by being made of silicon oxide.
• the film resistor of the present invention is characterized in that a sputter film is formed by using the above-mentioned sputtering target.
• the thermal printer head of the present invention includes an insulating substrate, a number of heating resistors provided on the insulating substrate, and electrodes connected to the heating resistors.
• the heating resistor is formed of a film resistor formed by sputtering using the above-mentioned sparing target.
• the sputtering target of the present invention uses Nb as a metal component that is a main component of the target, and contains this Nb in the form of an oxide and a silicide.
• Nb is uniformly dispersed and contained in the target in the form of a compound such as oxide / silicide, the film composition of the obtained film can be made uniform.
• the sputtering target of the present invention described above can be used for, for example, Nb powder. Alternatively, it is obtained by reacting and sintering a mixed powder of an Nb alloy powder and a silicon oxide powder.
• the composition ratio of the silicon oxide powder in the mixed powder is preferably in the range of 15 mol% to 70 niol% in molar ratio. That is, the sputtering target of the present invention is preferably one obtained by reacting and sintering Nb powder or Nb alloy powder containing silicon oxide in a molar ratio of 15 nio!% To 70 mol. .
• the reason why the molar ratio of silicon oxide in the mixed powder is limited to the range of 15 mol% to 70 niol% is as follows. That is, if the molar ratio of the silicon oxide powder exceeds 70 mol% ;, the obtained sintered body becomes brittle, the handleability is reduced, the uniformity of the obtained sputtered film is reduced, and the resistance change during the sputtering is reduced. As the rate increases, it becomes difficult to control the resistance value of the obtained sputtered film, and the variation in sheet resistance increases. On the other hand, when the molar ratio of silicon oxide is less than 15 mol%, the specific resistance of the obtained sputtered film is reduced, and the effect as a resistor is reduced. A more preferred range of the molar ratio of silicon oxide in the mixed powder is 30rao to ⁇ .
• the sputtering target of the present invention is a mixed powder comprising Nb oxide powder or Nb alloy oxide powder ', Nb silicide powder or Nb alloy silicide powder, and silicon oxide powder. It can also be obtained by sintering powder.
• the amount of each powder at this time is not particularly limited, but it is preferable to determine the composition ratio according to the above-mentioned mixed powder for reaction sintering.
• Hot pressing is generally used as a method for sintering the mixed powder described above.After hot isostatic pressing (HIP) or cold isostatic pressing (CIP), normal pressure sintering is performed. Is also good.
• HIP hot isostatic pressing
• CIP cold isostatic pressing
• the starting material for is not limited to Nb powder alone, but Nb alloy powder can also be used as described above.
• Nb alloy powder can also be used as described above.
• an Nb alloy an Nb-Ta alloy, an Nb-Fe alloy, or the like is used.
• Nb and Ta are present in the same ore, although their contents are different Therefore, it is desirable to use an alloy composed of both metals from the viewpoint of labor and cost required for refining.
• Nb is present in the target as a composite oxide or a composite silicide with Ta or Fe. Even when Nb is present in the target in such a form, the above-described effects can be similarly obtained.
• the film resistor of the present invention is formed of a film formed by sputtering using the sputtering ring-gate of the present invention described above, and is basically made of Nb-SiO. It has a system composition. Further, the film itself is excellent in oxidation resistance and heat resistance since the main body is amorphous.
• the above-described Nb component may be contained as an Nb-Ta alloy, an Nb-Fe alloy, or the like.
• the film resistor has a thickness of 5 ⁇ ! It is preferable to use a thin film of up to 3000 nm. A more preferred range for this film thickness is 0.50 nm to 200 nm, and more preferably 80 ⁇ ! ⁇ 500 nm.
• a film resistor containing silicon oxide as a resistance component and mainly containing Nb as a metal component has a high specific resistance, and is excellent in heat resistance and corrosion resistance, for example, a thermal printer head. By using it as a heating element, a large amount of heat can be stably obtained, and therefore, excellent print recording can be performed. Also, the density of Nb is about 1/2 of Ta and the price per unit weight is almost 1/2, so it is extremely useful from the viewpoint of cost reduction.
• the film resistor of the present invention is formed by using the sputtering target of the present invention, which is excellent in sputter characteristics (sputter emission angle, uniformity of composition, etc.).
• the composition deviation from the target is small, that is, the film composition is excellent in reproducibility and has a uniform composition. Therefore, it is possible not only to stably realize a high specific resistance, but also to minimize a variation in sheet resistance.
• Film resistor of the present invention considering the case of using as a heating element, it is necessary to have a high resistivity, the resistivity is 1 0 2 Q en! ⁇ 1 0 6 ⁇ cm of range and child. And is favored arbitrariness. Such a high resistivity is By using the snorting target of the present invention, it can be realized stably.
• the specific resistance value 1 0 2 Q en! ⁇ 1 0 6 ⁇ cm of range and child.
• the film resistor of the present invention Nb is mainly used as a metal component, and the sputtering target of the present invention, which can realize a uniform film composition, is used. It is possible to reduce the variation in sheet resistance to 20% or less. If the variation of the sheet resistance is large, when the thermal printer head is used, the variation of the calorific value in the substrate becomes large and the printing characteristics are deteriorated. The more preferable variation of the sheet resistance is 10% or less.
• the variation in the sheet resistance referred to here is a value obtained by the following equation.
• the thermal printer head of the present invention uses a film resistor having the above-described characteristics as a heating element, so that it can easily cope with high speed and high heat resistance. Excellent printing stability and resolution It will be. Brief Description of the Drawings.
• Figure 1 is the work s made the Nb- Si0 2 based film resistor in the embodiment of the present invention, the SiQ 2 amount and membrane resistance of the target in bets using relationship prior Ta- graph comparing the SiO 2 based film resistor, the second figure in the Nb-Si0 2 based film resistor fabricated in one embodiment of the present invention, the relationship Bara' key of the substrate position and the specific resistance of the conventional Ta -Si0 graph comparing the 2-based film resistor, FIG.
• FIG. 3 is shown to cross-sectional view of the schematic structure of a head to the thermal printers of an embodiment of the present invention, one embodiment of Fig. 4 the invention in the resistance value change rate when the Nb-Si0 2 based film resistor fabricated by adding heat pulses to the thermal purine head evening to single utilizing as heating elements as compared to conventional mono Marupuri Ntae' de
• FIG. 5 is a diagram showing sheet resistance measurement points on a substrate c .
• Reaction sintering was performed for 1 hour to obtain a target sintered body.
• the components contained in the sintered body were identified by X-ray microanalyzer analysis and X-ray diffraction, it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present. Thereafter, the surface of the sintered body was ground by about 1 mm by machining to obtain a sputtering target of 5 inches in diameter and 5 in thickness.
• the output was 300 W
• the Ar flow rate was 17 scc
• the gas pressure was 5.3 mTorr or more using a high frequency magnetron sputtering.
• a film having a thickness of 100 ⁇ was formed on a 3-inch glaze alumina substrate.
• the mixture was mixed for 18 hours.
• a pressure of 100 kg / cm 2 was applied to the mixed powder with a vacuum hot press device to 1400.
• Reaction sintering was performed under the conditions of CX for 1 hour to obtain a target sintered body.
• the components contained in the sintered body were identified by X-ray microanalyzer analysis and X-ray diffraction, it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present.
• the surface of the sintered body was ground by about 1 mm by machining to obtain a sputtering target with a diameter of 5 inches and a thickness of 5 mm.
• high-frequency magnetron sputtering was used to produce a 300-inch thick glaze alumina substrate under the conditions of an output of 300 W, an Ar flow rate of 17 secm, and a gas pressure of 5.3 ⁇ to 5.5 mTorr. A film having a thickness of 100 ⁇ was formed.
• the mixture was mixed for 18 hours in a vacuum using a ball mill.
• the mixed powder was subjected to reaction sintering under the conditions of 1400 X 1 hour at a pressure of 1 O Okg / era 2 with a vacuum hot press apparatus to obtain a target sintered body.
• the components contained in the sintered body were identified by X-ray microanalyzer analysis and X-ray diffraction, it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present.
• the surface of the sintered body was ground by about 1 mm by machining to obtain a sputtering target having a diameter of 5 inches and a thickness of 5 mm.
• a 100-nm-thick film was formed on a 3-inch glaze alumina substrate under the conditions of an output of 300 W, an Ar flow rate of 17 seem, and a gas pressure of 5.3 mTorr to 5.5 mTorr.
• the average particle diameter of 3 m Nb alloy powder containing 15 mol% of Ta (Nb), and silicon oxide powder which was sufficiently dried average particle diameter in lm, and Nt ⁇ '/ SiO x 70/30 in molar ratio
• the mixed powder was subjected to reaction sintering under the conditions of U00 ° C for 1 hour by applying a pressure of 100 kg / cm 2 with a vacuum hot press apparatus to obtain a target sintered body.
• the components contained in the 'sintered body' were identified by X-ray microscopic analyzer analysis and X-ray diffraction, the presence of niobium oxide, tantalum oxide, niobium silicide, tantalum silicide, and silicon oxide It was confirmed. Thereafter, the surface of the sintered body was ground by about 1 mm by machining to obtain a 5-inch diameter, 5-mni-thick sputtering pad.
• a high-frequency magnetron sputtering was used to produce a 100-nm-thick glazed alumina substrate on a 3-inch glazed alumina under the conditions of an output of 300 W, an Ar flow rate of 17 sccm, and a gas pressure of 5.3 mTorr to 5.5 mTorr. A film was formed.
• this sintered body When the components contained in this sintered body were identified by X-ray microscopic analyzer analysis and X-ray diffraction, it was found that niobium oxide, tantalum oxide, niobium silicide, tantalum silicide, and silicon oxide were present. It was confirmed. After this, the surface of the sintered body was machined. Then, it was ground by about 1 mm to obtain a sputtering target with a diameter of 5 inches and a thickness of 5 mm.
• a high-frequency magnetron sputter was used to produce a 100-inch thick glass substrate on a 3-inch glaze alumina substrate under the conditions of an output of 200 W, an Ar flow rate of 17 sccm, and a gas pressure of 5.3 raTorr to 5.5 mm. A nm film was formed.
• high-frequency magnetron sputtering was used to produce a 100-nm-thick glazed alumina substrate on a 3-inch glazed alumina substrate under the conditions of an output of 200 W, an Ar flow rate of 17 sccra, and a gas pressure of 5.SmTorr to 5.5 mTorr. A film was formed.
• the surface of the sintered body was ground by about 1 mm by machining to obtain a sputtering target having a diameter of 5 inches and a thickness of 5 minutes.
• high-frequency magnetron sputtering was performed on a 3-inch glaze alumina substrate under the conditions of 200 W output, 17 sccm Ar flow rate, and 5.3 mTorr to 5.5 mTorr gas pressure. A 100 nm film was formed.
• TC ⁇ 3.5 hours a condition of 150
• a mixed powder of Nb 5 Si 3 having an average particle diameter of 7 m and Nb 90 ⁇ at a weight ratio of 2: 1 and a silicon oxide powder having an average particle diameter of 78% were mixed with a Nb weight ratio of 78% in the sputtering target. And mixed with a ball mill in an argon atmosphere for 18 hours. Then, the mixed powder was sintered under a condition of 160 (TCX 3.5 hours) by applying a pressure of 100 kg / cm 2 with a vacuum hot press device to obtain a target sintered body. Ingredients of Was identified by X-ray microscope analyzer analysis and X-ray diffraction, and it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present. Thereafter, to cut about lram Research by machine 1 machinable surface of the sintered body, the diameter 5 inches, to give 'sputtering evening thickness 5 Li Ngutage' preparative 3 ⁇ 4.
• the average particle diameter of 7 ⁇ ⁇ of Nb r Sio and Nb 2 0 5 weight ratio 10 mixing a powder of 3, and a silicon oxide powder having an average particle diameter of 3 m, the weight ratio of Nb in the sputtering re Ngutage' bets is
• the mixture was prepared to be 65.4%, and mixed with a ball mill in an argon atmosphere for 18 hours. Then, the mixed powder was sintered under a condition of 1500 ° C ⁇ S.5 hours by applying a pressure of 100 kg / em 2 with a vacuum hot press apparatus to obtain a target sintered body.
• this sintered body was identified by X-ray microanalysis and X-ray diffraction, and it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present. Thereafter, the surface of the sintered body was subjected to approximately Iram grinding by machining to obtain a sputtering ingot having a diameter of 5 inches and a thickness of 5 mm.
• a high frequency magnet sputter was used to form a thick film on a 3-inch glass alumina substrate under the conditions of an output of 200 W, an Ar flow rate of 17 sccm, and a gas pressure of 5.3 mTorr to 5.5 raTorr. A 100 nm film was formed.
• the average particle diameter 7 m of Nb & Si and Nb 2 0 5 weight ratio 10 mixing a powder of 3, and a silicon oxide powder having an average particle diameter of 3 in, the weight ratio of Nb in the sputtering re Ngutage' bets 65.4 %, And mixed in a ball mill in an atmosphere of Argon for 18 hours. Then, the mixed powder is vacuum A pressure of 100 kg / cm 2 was applied using a hot press device, and sintering was performed at 1600 ° C. for 3.5 hours to obtain a target sintered body.
• this sintered body was identified by X-ray microanalyzer analysis and X-ray diffraction, and it was confirmed that niobium oxide, niobium silicide, and silicon oxide were present. Thereafter, the surface of the sintered body was ground by mechanical machining to obtain a sputtering target of 5 inches in diameter and 5 in thickness.
• a high-frequency magnetron sputtering was used to produce a 100-nm-thick glazed aluminum substrate on a 3-inch glazed aluminum substrate under the conditions of an output of 200 W, an Ar flow rate of 17 sccra, and a gas pressure of 5.3 raTorr to 5.5 mTorr. Was formed.
• the mixture was mixed in a ball mill in an argon atmosphere for 18 hours.
• this mixed powder was sintered under a condition of 1500 ° C. for 3.5 hours by applying a pressure of 100 kg / cm 2 using a vacuum hot press apparatus to obtain a target sintered body.
• the components contained in this sintered body were identified by X-ray microscopic analyzer analysis and X-ray diffraction, and it was confirmed that niobium oxide, niobium silicide and silicon oxide were present.
• the surface of the sintered body was polished by machining to obtain a sputtering target having a diameter of 5 inches and a thickness of 5'.0
• the sputtering target was used.
• a 100 nm thick film was formed on a S-inch glaze alumina substrate under the conditions of 200 W output, 17 sccm Ar flow rate, and 5.3 mTorr to 5.5 mTorr gas pressure.
• the average particle diameter of 7 ⁇ 111 Nbr Si 3 and Nb 2 0 5 weight ratio 10: 9 mixed with powder, and a silicon oxide powder having an average particle diameter of 3 m, spatter Li Ngutage' The mixture was prepared so that the weight ratio of Nb in the mixture was 56%, and mixed by a ball mill in an argon atmosphere for 18 hours. Next, the mixed powder was subjected to a pressure of 100 kg / cm 2 by a vacuum hot press apparatus and sintered at 1600 ° C. for 3.5 hours to obtain a target sintered body.
• the surface of the sintered body was ground by about lmm by machining to obtain a small sputtering target with a diameter of 5 inches and a thickness of 5 mm ⁇ Next, using the above sputtering target, high frequency A 100 nra-thick film was formed on a 3-inch glazed alumina substrate under the conditions of an output of 200 ', an Ar flow rate of 17sccm, and a gas pressure of 5.3mTorr to 5.5mTorr using a magnet port sputtering.
• the mixture was mixed for 18 hours.
• the mixed powder was sintered by applying a pressure of 100 kg / em 2 with a vacuum hot press device under the condition of 140 CTC for 1 hour to obtain a target sintered body. Thereafter, the surface of the sintered body was ground by about 1 mm by machining to obtain a 5-inch diameter and 5BD-thick sputtering alloy.
• a Ta powder having an average particle diameter of 3; / m and a silicon oxide powder having an average particle diameter of sufficiently dried are mixed so as to have a molar ratio of Ta / SiO x 45/55, and are then vacuumed by a ball mill. For 18 hours. Next, a pressure of 100 kg / cm 2 was applied to this mixed powder with a vacuum hot press device at 1500 ° C. Sintering was performed for one hour to obtain the target sintered body. Thereafter, the surface of the sintered body was ground by about 1 mm by machining to obtain a sputtering target with a diameter of 5 inches and a thickness of 5 mm.
• a high-frequency magnetron sputter was used to produce a 200-W output power, an Ar flow rate of 17 sccm, and a gas pressure of 5.3 mTorr to 5.5 mTorr, on a 3-inch glaze alumina substrate. A 100 nm film was formed.
• Table 1 also shows that alloys containing Ta, Fe, etc. maintain their stability.
• Table 2 shows the relationship between the composition of the gates manufactured in each of the examples and the comparative examples and the composition of the film formed by sputtering them. From these results, it was found that a film having almost the same composition as the target can be formed with high reproducibility by forming a film using each sputtering target according to the example. It was also shown that the performance of the alloy containing Ta, Fe, etc. hardly changed.
• reference numeral 1 denotes an insulating substrate such as a ceramic substrate or a metal substrate having an insulating layer on the surface.
• a heating resistor layer 2 is formed on the insulating substrate 1.
• the heating resistor layer 2 is patterned to form a heating resistor group.
• a common electrode 4 made of A1 or the like and an individual electrode 5 are provided so as to form an opening serving as a heat generating portion 3, and cover the heat generating portion 3 at least. So, the thickness ⁇ ! A protective layer 6 of about 10 m is formed.
• the preferred thickness of this protective film is ⁇ ! ⁇ ⁇ ⁇ ⁇ , and more preferably 3 ⁇ ! ⁇ 4 ⁇ 111.
• a glaze alumina substrate on which a film resistor was formed according to Example 3 above was used as the insulating substrate 1 of the above-described thermal printer head, and the film resistor was used as a heating resistor layer. After patterning this film resistor, an A1 electrode 45 is formed on each heating resistor 2, a protective film is further formed, and a thermal printer head is manufactured. did.
• Figure 4 shows the rate of change in resistance when a thermal pulse with a pulse width of 0.3 sec and a period of 5 msec was applied to the obtained thermal print head.
• the test results of a thermal printer head using a conventional TaN resistance film are also shown as comparative examples.
• the thermal printer head of the present invention is used. Compared to thermal printer heads using a TaN resistive film, the resistance fluctuation due to the heat pulse is small and the heat resistance is excellent.
• the same effect can be obtained even if a small amount of Fe is contained in an alloy composed of Nb and Ta, or a small amount of Ta is contained in an alloy composed of Nb and Fe.
• the thermal printer head of the present invention is a thin-film thermal printer having a high specific resistance, high thermal stability, and high heat resistance, comprising the above-described film resistor according to the present invention as a heating element.
• the film resistor formed by using the sputtering ring of the present invention has a stable film composition and resistance value, and can realize a high specific resistance. It is useful as a heating element for a head.
• the thermal printer of the present invention can easily cope with high speed and high heat resistance, and furthermore, satisfies high printing performance, so that it is useful as a recording device requiring small size and high performance. .

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Organic Chemistry (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physical Vapour Deposition (AREA)
• Electronic Switches (AREA)
• Compositions Of Oxide Ceramics (AREA)
• Powder Metallurgy (AREA)

Priority Applications (6)

Applications Claiming Priority (4)

Publications (1)

Family

ID=26357406

Family Applications (1)

Country Status (5)

Families Citing this family (1)

Citations (1)

Family Cites Families (4)

• 1991
  • 1991-01-31 KR KR1019950704653A patent/KR960006591B1/ko not_active IP Right Cessation
  • 1991-01-31 JP JP3503460A patent/JPH0726200B1/ja not_active Expired - Lifetime
  • 1991-01-31 WO PCT/JP1991/000119 patent/WO1991011328A1/ja active Application Filing
  • 1991-01-31 EP EP91903659A patent/EP0471080B1/en not_active Expired - Lifetime
  • 1991-01-31 KR KR1019950704652A patent/KR960006590B1/ko not_active IP Right Cessation
  • 1991-01-31 DE DE69112739T patent/DE69112739T2/de not_active Expired - Fee Related
• 1994
  • 1994-08-04 JP JP6183360A patent/JPH07292464A/ja active Pending

Patent Citations (1)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events