DE69112739T2 - Zerstäubungstarget, damit hergestellter filmwiderstand und thermischer druckkopf nebst zugehöriger herstellungsverfahren. - Google Patents

Zerstäubungstarget, damit hergestellter filmwiderstand und thermischer druckkopf nebst zugehöriger herstellungsverfahren.

Info

Publication number
DE69112739T2
DE69112739T2 DE69112739T DE69112739T DE69112739T2 DE 69112739 T2 DE69112739 T2 DE 69112739T2 DE 69112739 T DE69112739 T DE 69112739T DE 69112739 T DE69112739 T DE 69112739T DE 69112739 T2 DE69112739 T2 DE 69112739T2
Authority
DE
Germany
Prior art keywords
print head
production processes
thermal print
film resistance
related production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112739T
Other languages
English (en)
Other versions
DE69112739D1 (de
Inventor
Takashi Ishigami
Mitsuo Kawai
Atsuko Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69112739D1 publication Critical patent/DE69112739D1/de
Publication of DE69112739T2 publication Critical patent/DE69112739T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Electronic Switches (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)
DE69112739T 1990-02-01 1991-01-31 Zerstäubungstarget, damit hergestellter filmwiderstand und thermischer druckkopf nebst zugehöriger herstellungsverfahren. Expired - Fee Related DE69112739T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2044690 1990-02-01
JP27777790 1990-10-18
PCT/JP1991/000119 WO1991011328A1 (en) 1990-02-01 1991-01-31 Sputtering target, film resistor formed with the use thereof, and thermal printer head

Publications (2)

Publication Number Publication Date
DE69112739D1 DE69112739D1 (de) 1995-10-12
DE69112739T2 true DE69112739T2 (de) 1996-04-11

Family

ID=26357406

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112739T Expired - Fee Related DE69112739T2 (de) 1990-02-01 1991-01-31 Zerstäubungstarget, damit hergestellter filmwiderstand und thermischer druckkopf nebst zugehöriger herstellungsverfahren.

Country Status (5)

Country Link
EP (1) EP0471080B1 (de)
JP (2) JPH0726200B1 (de)
KR (2) KR960006591B1 (de)
DE (1) DE69112739T2 (de)
WO (1) WO1991011328A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6311928B2 (ja) * 2014-07-11 2018-04-18 三菱マテリアル株式会社 Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441718B2 (de) * 1973-07-31 1979-12-10
JPS53113554A (en) * 1977-03-15 1978-10-04 Matsushita Electric Ind Co Ltd Thin film type thermal head
US4663120A (en) * 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
JPS62238767A (ja) * 1986-04-10 1987-10-19 Ngk Insulators Ltd 記録装置
JP2594794B2 (ja) * 1987-08-06 1997-03-26 株式会社ジャパンエナジー シリサイドターゲットとその製造方法

Also Published As

Publication number Publication date
WO1991011328A1 (en) 1991-08-08
EP0471080B1 (de) 1995-09-06
EP0471080A4 (en) 1993-01-13
JPH0726200B1 (de) 1995-03-22
JPH07292464A (ja) 1995-11-07
KR960006590B1 (ko) 1996-05-20
KR960006591B1 (ko) 1996-05-20
DE69112739D1 (de) 1995-10-12
EP0471080A1 (de) 1992-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee