WO1990002718A1 - Verfahren zum erzeugen einer glatten oberfläche eines keramischen substrates - Google Patents

Verfahren zum erzeugen einer glatten oberfläche eines keramischen substrates Download PDF

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Publication number
WO1990002718A1
WO1990002718A1 PCT/DE1989/000392 DE8900392W WO9002718A1 WO 1990002718 A1 WO1990002718 A1 WO 1990002718A1 DE 8900392 W DE8900392 W DE 8900392W WO 9002718 A1 WO9002718 A1 WO 9002718A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ceramic substrate
glass
smoothed
pore
Prior art date
Application number
PCT/DE1989/000392
Other languages
German (de)
English (en)
French (fr)
Inventor
Jörg SCHWEIKHARDT
Peter SCHÖTTLE
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO1990002718A1 publication Critical patent/WO1990002718A1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5022—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with vitreous materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/86—Glazes; Cold glazes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Definitions

  • the invention relates to a method for producing a smooth surface of a ceramic substrate for coating with a thin layer, in particular a layer with a semiconductor and / or transistor function.
  • Ceramic substrates are particularly suitable for this purpose as insulating substrates.
  • these ceramic substrates again have the disadvantage that their surface is relatively rough and porous, so that the actual semiconductor layer does not have a uniform thickness over its entire surface.
  • the application and the properties of the semiconductor layer in the thin or thick layer process are also negatively influenced by the rough surface of the ceramic substrate.
  • DE-OS 23 25 774 shows a surface-rough body covered with a surface-smooth layer, in particular a ferrite core, in which a preferably low-melting glass solder is applied as an intermediate layer on the surface-rough body.
  • the melted glass solder forms a non-porous coating and is so smooth that all the processing techniques in question for producing conductor tracks, namely laser beam treatment, screen printing technology, mask technology and the etching process, are possible.
  • this method does not relate to the production of a layer with a semiconductor and / or transistor function on an insulating substrate.
  • the method with the features of the main claim contains, on the other hand, that the ceramic substrate is first smoothed by grinding and polishing or the like, and then a glass-like, pore-free layer is applied to this smoothed ceramic substrate.
  • This applied glass-like, pore-free layer is then preferably polished again.
  • layers with a semiconductor and / or transistor function can be applied easily.
  • Such layers are, for example, CdSe (cadmium selenide) layers and undoped or doped a-Si: H (amorphous silicon layers with a high hydrogen content).
  • These latter layers are generally applied by physical or chemical processes, for example vapor deposition, plasma-assisted glass phase deposition, etc.
  • Polytitanate is preferably used as the ceramic substrate, but the invention is not intended to be limited to this.
  • the thick-film method should preferably be used as the method for applying the glass-like, pore-free layer. More detailed information about this method can be found in the above-mentioned DE-AS 25 26 553 or the prior art mentioned there.
  • CVD Chemical Vapor Deposition
PCT/DE1989/000392 1988-09-13 1989-06-15 Verfahren zum erzeugen einer glatten oberfläche eines keramischen substrates WO1990002718A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3831148.8 1988-09-13
DE19883831148 DE3831148C1 (zh) 1988-09-13 1988-09-13

Publications (1)

Publication Number Publication Date
WO1990002718A1 true WO1990002718A1 (de) 1990-03-22

Family

ID=6362881

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1989/000392 WO1990002718A1 (de) 1988-09-13 1989-06-15 Verfahren zum erzeugen einer glatten oberfläche eines keramischen substrates

Country Status (2)

Country Link
DE (1) DE3831148C1 (zh)
WO (1) WO1990002718A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074229A1 (en) 2012-11-09 2014-05-15 Dow Corning Corporation Method for preparing an organo-functional silane

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9722020D0 (en) * 1997-10-17 1997-12-17 Tsl Group Plc Production of quartz glass articles having high surface purity
DE10142614A1 (de) * 2001-08-31 2003-04-03 Siemens Ag Leistungselektronikeinheit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544208A1 (de) * 1966-04-20 1970-07-02 Ibm Deutschland Verfahren zum Erzeugen einer Schicht in Form eines Musters auf der Oberflaeche eines Koerpers
US4004052A (en) * 1974-03-08 1977-01-18 Vera Ivanovna Bystrova Process for producing non-porous coating for corundum substrates
GB2185973A (en) * 1986-02-03 1987-08-05 Sumitomo Metal Mining Co Dielectric ceramics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2325774A1 (de) * 1973-05-21 1974-12-19 Siemens Ag Mit einer oberflaechenglatten schicht bedeckter oberflaechenrauher koerper sowie verfahren zu seiner herstellung
DE2526553C3 (de) * 1975-06-13 1978-06-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Mehrlagige elektronische Schichtschaltung und Verfahren zu ihrer Herstellung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544208A1 (de) * 1966-04-20 1970-07-02 Ibm Deutschland Verfahren zum Erzeugen einer Schicht in Form eines Musters auf der Oberflaeche eines Koerpers
US4004052A (en) * 1974-03-08 1977-01-18 Vera Ivanovna Bystrova Process for producing non-porous coating for corundum substrates
GB2185973A (en) * 1986-02-03 1987-08-05 Sumitomo Metal Mining Co Dielectric ceramics

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Chemical Abstracts, Band 105, Nr. 24, Dezember 1986, (Columbus, Ohio, US), siehe Seite 267 *
Solid State Technology, Band 24, Nr. 10, Oktober 1981 (Port Washington, Ny, US) L.W. Winkle et al.: "Improved atmospheric-pressure chemical vapor-deposition system for depositing silica and phosphosilicate glass thin films", Seiten 123-128 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074229A1 (en) 2012-11-09 2014-05-15 Dow Corning Corporation Method for preparing an organo-functional silane

Also Published As

Publication number Publication date
DE3831148C1 (zh) 1990-03-29

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