WO1990002718A1 - Process for smoothing the surface of a ceramic substrate - Google Patents

Process for smoothing the surface of a ceramic substrate Download PDF

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Publication number
WO1990002718A1
WO1990002718A1 PCT/DE1989/000392 DE8900392W WO9002718A1 WO 1990002718 A1 WO1990002718 A1 WO 1990002718A1 DE 8900392 W DE8900392 W DE 8900392W WO 9002718 A1 WO9002718 A1 WO 9002718A1
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WIPO (PCT)
Prior art keywords
layer
ceramic substrate
glass
smoothed
pore
Prior art date
Application number
PCT/DE1989/000392
Other languages
German (de)
French (fr)
Inventor
Jörg SCHWEIKHARDT
Peter SCHÖTTLE
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO1990002718A1 publication Critical patent/WO1990002718A1/en

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5022—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with vitreous materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/86—Glazes; Cold glazes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Definitions

  • the invention relates to a method for producing a smooth surface of a ceramic substrate for coating with a thin layer, in particular a layer with a semiconductor and / or transistor function.
  • Ceramic substrates are particularly suitable for this purpose as insulating substrates.
  • these ceramic substrates again have the disadvantage that their surface is relatively rough and porous, so that the actual semiconductor layer does not have a uniform thickness over its entire surface.
  • the application and the properties of the semiconductor layer in the thin or thick layer process are also negatively influenced by the rough surface of the ceramic substrate.
  • DE-OS 23 25 774 shows a surface-rough body covered with a surface-smooth layer, in particular a ferrite core, in which a preferably low-melting glass solder is applied as an intermediate layer on the surface-rough body.
  • the melted glass solder forms a non-porous coating and is so smooth that all the processing techniques in question for producing conductor tracks, namely laser beam treatment, screen printing technology, mask technology and the etching process, are possible.
  • this method does not relate to the production of a layer with a semiconductor and / or transistor function on an insulating substrate.
  • the method with the features of the main claim contains, on the other hand, that the ceramic substrate is first smoothed by grinding and polishing or the like, and then a glass-like, pore-free layer is applied to this smoothed ceramic substrate.
  • This applied glass-like, pore-free layer is then preferably polished again.
  • layers with a semiconductor and / or transistor function can be applied easily.
  • Such layers are, for example, CdSe (cadmium selenide) layers and undoped or doped a-Si: H (amorphous silicon layers with a high hydrogen content).
  • These latter layers are generally applied by physical or chemical processes, for example vapor deposition, plasma-assisted glass phase deposition, etc.
  • Polytitanate is preferably used as the ceramic substrate, but the invention is not intended to be limited to this.
  • the thick-film method should preferably be used as the method for applying the glass-like, pore-free layer. More detailed information about this method can be found in the above-mentioned DE-AS 25 26 553 or the prior art mentioned there.
  • CVD Chemical Vapor Deposition

Abstract

In a process for smoothing the surface of a ceramic substrate to be coated with a thin film, in particular a film with a semiconductor and/or transistor function, the substrate is smoothed by grinding, polishing or the like, then coated with a vitreous, poreless layer and finally this vitreous, poreless layer is polished once again.

Description

Verfahren zum Erzeugen einer glatten Oberfläche eines keramischen Substrates Process for producing a smooth surface of a ceramic substrate
Stand der TechnikState of the art
Die Erfindung betrifft ein Verfahren zum Erzeugen einer glatten Oberfläche eines keramischen Substrates für die Beschichtung mit einer dünnen Schicht, insbesondere einer Schicht mit einer Halbleiter- und/oder Transistorfunktion.The invention relates to a method for producing a smooth surface of a ceramic substrate for coating with a thin layer, in particular a layer with a semiconductor and / or transistor function.
In vielen Anwendungsfällen ist es wünschenswert, inte¬ grierte Schaltungen mit Halbleiterschichten auf einem isolierenden Substrat aufzubringen. Hierzu bieten sich als isolierende Substrate insbesondere keramische Substrate an. Diese keramischen Substrate haben jedoch wiederum den Nachteil, daß ihre Oberfläche relativ rauh und porös ist, so daß die eigentliche Halbleiterschicht keine gleich¬ mäßige Dicke über ihre gesamte Fläche aufweist. Auch das Aufbringen und die Eigenschaften der Halbleiterschicht im Dünn- oder Dickschichtverfahren werden durch die rauhe Oberfläche des keramischen Substrates negativ beeinflußt.In many applications it is desirable to apply integrated circuits with semiconductor layers on an insulating substrate. Ceramic substrates are particularly suitable for this purpose as insulating substrates. However, these ceramic substrates again have the disadvantage that their surface is relatively rough and porous, so that the actual semiconductor layer does not have a uniform thickness over its entire surface. The application and the properties of the semiconductor layer in the thin or thick layer process are also negatively influenced by the rough surface of the ceramic substrate.
Aus der DE-AS 25 26 553 ist eine elektronische Schicht¬ schaltung bekannt, bei der auf einem Substrat eine Schal¬ tungsebene in Dünnschichttechnik aufgebracht und von einer benachbarten in Dickschichttechnik hergestellten Schaltungs- ebene durch eine Isolierschicht aus amorphem Glas getrennt ist. Hierdurch sollen die Vorteile der Dickschichtschaltung mit denen einer in Dünnschichttechnik hergestellten Schal¬ tungsebene verbunden werden. Sollte es sich jedoch bei dem Substrat um ein keramisches Substrat handeln, so bleiben die oben beschriebenen Nachteile bezüglich der in Dünn¬ schichttechnik aufgebrachten Schaltungsebene bestehen.From DE-AS 25 26 553 an electronic layer circuit is known in which a circuit level is applied to a substrate in thin-film technology and by an adjacent circuit layer manufactured in thick-film technology. level is separated by an insulating layer of amorphous glass. This is intended to combine the advantages of the thick-film circuit with those of a circuit plane produced using thin-film technology. However, if the substrate is a ceramic substrate, the disadvantages described above with regard to the circuit level applied in thin-film technology remain.
In der DE-OS 23 25 774 wird ein mit einer oberflächenglatten Schicht bedeckter oberflächenrauher Körper, insbesondere ein Ferritkern aufgezeigt, bei dem als Zwischenschicht auf dem oberflächenrauhen Körper ein vorzugsweise niedrig schmelzendes Glaslot aufgebracht ist. Dabei bildet das aufgeschmolzene Glaslot einen porenlosen Überzug und ist derart glatt, daß alle in Frage kommenden Bearbeitungs- techniken zur Erzeugung von Leiterbahnen, nämlich Laser¬ strahl-Behandlung, Siebdruck-Technik, Maskentechnik und das Ätzverfahren, möglich sind. Somit bezieht sich dieses Verfahren nicht auf die Herstellung von einer Schicht mit einer Halbleiter- und/oder Transistorfunktion auf einem isolierenden Substrat.DE-OS 23 25 774 shows a surface-rough body covered with a surface-smooth layer, in particular a ferrite core, in which a preferably low-melting glass solder is applied as an intermediate layer on the surface-rough body. The melted glass solder forms a non-porous coating and is so smooth that all the processing techniques in question for producing conductor tracks, namely laser beam treatment, screen printing technology, mask technology and the etching process, are possible. Thus, this method does not relate to the production of a layer with a semiconductor and / or transistor function on an insulating substrate.
Vorteile der ErfindungAdvantages of the invention
Das Verfahren mit den Merkmalen des Hauptanspruchs bein¬ haltet dagegen, daß das keramische Substrat zuerst durch Schleifen und Polieren od. dgl. Maßnahmen geglättet und sodann auf dieses geglättete keramische Substrat eine glasartige, porenfreie Schicht aufgebracht wird. Bevorzugt wird danach diese aufgebrachte glasartige, porenfreie Schicht nochmals poliert. Hierdurch wird eine absolut glatte und ebene Oberfläche erzeugt, so daß Schichten mit einer Halbleiter- und/oder Transistorfunktion ohne weiteres aufgebracht werden können. Derartige Schichten sind beispielsweise CdSe (Cadmium-Selenid)- Schichten und undotierte oder dotierte a-Si:H (amorphe Silicium- schichten mit hohem Wasserstoffgehalt) . Diese letztgenannten Schichten werden in der Regel nach physikalischen oder chemischen Verfahren, z.B. Aufdampfen, plasmaunterstützte Glasphasenabscheidung usw., aufgebracht.The method with the features of the main claim contains, on the other hand, that the ceramic substrate is first smoothed by grinding and polishing or the like, and then a glass-like, pore-free layer is applied to this smoothed ceramic substrate. This applied glass-like, pore-free layer is then preferably polished again. This creates an absolutely smooth and flat surface, so that layers with a semiconductor and / or transistor function can be applied easily. Such layers are, for example, CdSe (cadmium selenide) layers and undoped or doped a-Si: H (amorphous silicon layers with a high hydrogen content). These latter layers are generally applied by physical or chemical processes, for example vapor deposition, plasma-assisted glass phase deposition, etc.
Als keramisches Substrat wird bevorzugt Polytitanat verwen¬ det, jedoch soll hierauf die Erfindung nicht beschränkt sein.Polytitanate is preferably used as the ceramic substrate, but the invention is not intended to be limited to this.
Als Verfahren zum Aufbringen der glasartigen, porenfreien Schicht soll bevorzugt das Dickschichtverfahren angewendet werden. Nähere Angaben über dieses Verfahren finden sich in der oben genannten DE-AS 25 26 553 bzw. dem dort genann- ten Stand der Technik.The thick-film method should preferably be used as the method for applying the glass-like, pore-free layer. More detailed information about this method can be found in the above-mentioned DE-AS 25 26 553 or the prior art mentioned there.
Als weiteres bevorzugtes Verfahren zum Aufbringen der glasartigen, porenfreien Schicht wird die chemische oder plasmaunterstützte Gasphasenabscheidung des SiO_ genannt. Hierdurch lassen sich insbesondere sehr dünne Schichten erzeugen.Chemical or plasma-assisted vapor deposition of SiO_ is mentioned as a further preferred method for applying the glass-like, pore-free layer. In this way, very thin layers can be produced in particular.
Als letztes noch bevorzugtes Verfahren soll das Aufbringen einer CVD-Si-Schicht (CVD = Chemical Vapor Deposition) genannt werden, die anschließend durch thermische Oxidation in SiO- umgewandelt wird. The last preferred method is the application of a CVD-Si layer (CVD = Chemical Vapor Deposition), which is subsequently converted into SiO- by thermal oxidation.

Claims

- -Patentansprüche - -Patent claims
1. Verfahren zum Erzeugen einer glatten Oberfläche eines keramischen Substrates für die Beschichtung mit einer dünnen Schicht, insbesondere einer Schicht mit einer Halb- leiter- und/oder Transistorfunktion, dadurch gekennzeichnet, daß das keramische Substrat durch Schleifen, Polieren od. dgl. geglättet und sodann eine glasartige, porenfreie Schicht aufgebracht wird.1. A method for producing a smooth surface of a ceramic substrate for coating with a thin layer, in particular a layer with a semiconductor and / or transistor function, characterized in that the ceramic substrate or the like is smoothed by grinding, polishing and the like then a glass-like, non-porous layer is applied.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die aufgebrachte glasartige, porenfreie Schicht poliert wird.2. The method according to claim 1, characterized in that the applied glass-like, non-porous layer is polished.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß als keramisches Substrat Polytitanat verwendet wird.3. The method according to claim 1 or 2, characterized in that polytitanate is used as the ceramic substrate.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß auf das geglättete keramische Substrat als glasartige, porenfreie Schicht ein Glas in Dickschicht- technik aufgedruckt wird.4. The method according to any one of claims 1 to 3, characterized in that a glass in thick-film technology is printed on the smoothed ceramic substrate as a glass-like, pore-free layer.
5. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß auf das geglättete keramische Substrat als glasartige, porenfreie Schicht SiO-, mittels chemischer oder plasmaunterstützter Gasphasenabscheidung aufgebracht wird. - 6. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß auf das geglättete keramische Substrat eine SiO_-Schicht aufgebracht wird, die durch thermische Oxidation einer im CVD-Verfahren hergestellte Si-Schicht5. The method according to any one of claims 1 to 3, characterized in that SiO- is applied to the smoothed ceramic substrate as a glass-like, pore-free layer, by means of chemical or plasma-assisted gas phase deposition. - 6. The method according to any one of claims 1 to 3, characterized in that an SiO_ layer is applied to the smoothed ceramic substrate, which by thermal oxidation of a Si layer produced in the CVD process
> gewonnen wird. > is won.
PCT/DE1989/000392 1988-09-13 1989-06-15 Process for smoothing the surface of a ceramic substrate WO1990002718A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19883831148 DE3831148C1 (en) 1988-09-13 1988-09-13
DEP3831148.8 1988-09-13

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WO1990002718A1 true WO1990002718A1 (en) 1990-03-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074229A1 (en) 2012-11-09 2014-05-15 Dow Corning Corporation Method for preparing an organo-functional silane

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9722020D0 (en) * 1997-10-17 1997-12-17 Tsl Group Plc Production of quartz glass articles having high surface purity
DE10142614A1 (en) * 2001-08-31 2003-04-03 Siemens Ag Power electronics unit

Citations (3)

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DE1544208A1 (en) * 1966-04-20 1970-07-02 Ibm Deutschland Method for producing a layer in the form of a pattern on the surface of a body
US4004052A (en) * 1974-03-08 1977-01-18 Vera Ivanovna Bystrova Process for producing non-porous coating for corundum substrates
GB2185973A (en) * 1986-02-03 1987-08-05 Sumitomo Metal Mining Co Dielectric ceramics

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DE2325774A1 (en) * 1973-05-21 1974-12-19 Siemens Ag Smooth layer prodn on rough body, esp. ferrite core - by depositing very thin, flat, insulating and protective inter, glass layer
DE2526553C3 (en) * 1975-06-13 1978-06-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Multilayer electronic circuit and method for its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544208A1 (en) * 1966-04-20 1970-07-02 Ibm Deutschland Method for producing a layer in the form of a pattern on the surface of a body
US4004052A (en) * 1974-03-08 1977-01-18 Vera Ivanovna Bystrova Process for producing non-porous coating for corundum substrates
GB2185973A (en) * 1986-02-03 1987-08-05 Sumitomo Metal Mining Co Dielectric ceramics

Non-Patent Citations (2)

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Title
Chemical Abstracts, Band 105, Nr. 24, Dezember 1986, (Columbus, Ohio, US), siehe Seite 267 *
Solid State Technology, Band 24, Nr. 10, Oktober 1981 (Port Washington, Ny, US) L.W. Winkle et al.: "Improved atmospheric-pressure chemical vapor-deposition system for depositing silica and phosphosilicate glass thin films", Seiten 123-128 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074229A1 (en) 2012-11-09 2014-05-15 Dow Corning Corporation Method for preparing an organo-functional silane

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