WO1989006437A1 - Dispositif de formation d'une fine pellicule - Google Patents

Dispositif de formation d'une fine pellicule Download PDF

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Publication number
WO1989006437A1
WO1989006437A1 PCT/JP1989/000023 JP8900023W WO8906437A1 WO 1989006437 A1 WO1989006437 A1 WO 1989006437A1 JP 8900023 W JP8900023 W JP 8900023W WO 8906437 A1 WO8906437 A1 WO 8906437A1
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WO
WIPO (PCT)
Prior art keywords
target
wafer
thin film
chamber
holder
Prior art date
Application number
PCT/JP1989/000023
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
Tadashi Shibata
Masaru Umeda
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Priority to JP1501169A priority Critical patent/JP3057605B2/ja
Publication of WO1989006437A1 publication Critical patent/WO1989006437A1/fr
Priority to US08/213,079 priority patent/US5906688A/en
Priority to US08/458,894 priority patent/US5591267A/en
Priority to US08/872,467 priority patent/US6074538A/en
Priority to US09/085,238 priority patent/US5989722A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Definitions

  • the present invention relates to a thin film forming apparatus suitable for manufacturing, for example, an ultra-high density integrated circuit.
  • DRAM Dynamic * Random access memory
  • 16 megabit and 64 megabit DRAMs are the subject of R & D, and technology is being actively developed.
  • the degree of integration the dimensions of unit elements have been reduced, and the minimum dimensions have been reduced from 1 ⁇ m to the submicron region.
  • the structure of various devices that make up an integrated circuit is basically a laminated structure of various thin films.
  • the MOS transistor has a three-layer structure consisting of an electrode material and a thin green material thin film and a semiconductor substrate, the main part of which is formed.
  • the capacitor used in the memory cell of the DRAM has a high capacity. It has a semiconductor three-layer structure in which a dielectric thin film is sandwiched between upper and lower electrode materials.
  • the non-volatile memory device has a five-layer structure consisting of a semiconductor substrate, a thin green film, an electrode material, an insulating thin film, and an electrode material. The structure is With the miniaturization of devices, As the thicknesses of these thin films become ever thinner, the characteristics of these thin films will be a major factor in determining the characteristics, yield, and reliability of LSIs. Therefore, the key to realizing ultra-high integration in the future is the technology for forming high-quality thin films, and the technology for realizing a highly reliable thin-film laminated structure. In addition, these processes
  • the insulating film formed thereon and the electrode forming temperature are lower than the melting point of A (about 630). It must be between 500 and 550 and should be able to do the following, and preferably it should be 400 and below. In order to precisely control the distribution of N-type and P-type impurities, it is necessary to keep the process temperature at 700 or lower.
  • FIG. 23 is a schematic diagram showing a cross-sectional structure of a memory capacitor portion 2301 of a DRAM memory cell formed by a conventional technique. This structure is formed, for example, by forming a field oxide film 2303 on a silicon substrate 2302 and then forming a memory capacitor forming portion.
  • 3 0 5 is deposited by CVD and put into a predetermined shape. By doing so, a memory capacitor is realized.
  • the surface of the silicon substrate 2302 is exposed by etching with a dilute HF solution or the like, and then an oxide film is grown by placing the wafer in a thermal oxidation furnace. After that, the ⁇ is taken out of the furnace, and then the ⁇ is put into the CVD apparatus to deposit a polycrystalline silicon film 235, which is processed into a predetermined pattern. Normal. That is, since the thin films constituting the laminated structure are formed in separate devices in a normal process, the interface between the thin films is always exposed to the atmosphere.
  • An oxide film of 100 A is an insulating film used for a 1-megabit DRAM, and a thin film of 50 A or less is required for a 4-megabit or 16-megabit DRAM. Therefore, the problem of interface contamination has become a serious problem because it has become a major factor in lowering the withstand voltage and reliability of the thin film oxide film.
  • Silicon nitride film (Si 3 N 4) which has a higher dielectric constant than the thermal oxide film (S i 02) of S, is used as the canopy green film of DRAM.
  • Si 3 N 4 film Although a thin film may be used, it is very difficult to form a Si 3 N 4 film by directly nitriding silicon, so use a Si 3 N 4 film deposited by LPCVD. ing. Usually, the thin film formed by deposition has poor interface characteristics with silicon and has many defects such as pinholes. Therefore, after thermal oxidation of the silicon surface, Si 3 N 4 By depositing a film, the interface characteristics with Si are improved,
  • the final capacitor structure consists of five layers of Si * Si0a.SiaN4 • Si02 / Po1Si (polycrystalline silicon). With a laminated structure, there are four interfaces exposed to the atmosphere, making it very difficult to prevent the introduction of contamination. In addition, thermal oxidation is usually performed at a temperature of 850 to 900 or higher, so that it is almost impossible to lower the temperature of the process.
  • the present invention has been made in view of the above points, and provides, for example, a thin film forming apparatus suitable for manufacturing an ultra-high-density integrated circuit.
  • the present invention provides a thin film forming apparatus having a plurality of decompression chambers, and an exhaust device and a gas supply device connected to the plurality of decompression chambers, so that a small kinetic energy can be obtained without depositing any thin film on the wafer surface.
  • At least one first decompression chamber having means for irradiating the ion is provided, and the second decompression chamber for forming a thin film on the surface by sputtering is reduced in number.
  • there is a gist in a thin film forming apparatus characterized by having a mechanism capable of performing vacuum transfer between the first and second decompression chambers without breaking vacuum.
  • FIG. 1 (a) is a system diagram of an apparatus showing one embodiment of the present invention
  • FIG. 1 (b) is a cross-sectional view of an apparatus showing another embodiment of the present invention
  • FIG. 2 is a modification of the present invention.
  • FIG. 3 is a conceptual diagram showing an example
  • FIG. 3 is a conceptual diagram showing a thin film structure formed using the device according to the modification shown in FIG. 2
  • FIGS. 4 (a) to 4 (e) are snorters.
  • Fig. 5 is a schematic diagram of a chamber
  • Fig. 5 is a conceptual diagram showing an example of the connection relationship between a tachino and a vacuum evacuation device and a gas supply device
  • Fig. Photomicrographs showing the effect on roughness Fig.
  • FIG. 7 (a) is a block diagram showing the experimental setup for degassing characteristics
  • Fig. 7 (b) is a graph showing the results
  • Fig. 8 is an experiment.
  • FIG. 9 is a graph showing element distribution
  • FIG. 10 is a front view and a cross-sectional view showing an example of a sealing material
  • FIG. Fig. 1 1 is a mechanism diagram showing the replacement of the target material
  • Fig. 1 2 is a graph showing the current-voltage characteristics of the target with respect to frequency
  • Fig. 1 3 is a concept showing an example of a method of holding the target
  • FIG. 14 is a conceptual diagram showing an example of a high-speed gate valve
  • FIG. 15 is a micrograph of an AJ2 thin film formed on a Si wafer using the apparatus according to the present invention.
  • FIG. 16 is an electron beam diffraction photograph
  • FIG. 17 is a graph showing the relationship between X-ray intensity and X-ray intensity in a Cu thin film formed using the apparatus according to the present invention.
  • FIG. 18 is a conceptual cross-sectional view of a thin film structure formed by using the device according to the present invention
  • FIG. 19 is a diagram showing the current of a shot key junction in the structure shown in FIG.
  • FIG. 20 is a graph showing voltage characteristics
  • FIG. 20 is a graph showing a relationship between a wafer bias and a height of a shot barrier in the structure shown in FIG.
  • FIG. 23 is a diagram for explaining a conventional example, and is a one-sided structural diagram of a memory capacitor portion of a DRAM memory cell. 2 to 22 are detailed drawings for explaining an embodiment of the present invention, and FIG. 23 is a drawing for explaining a conventional example.
  • FIG. 1 (a) is a system configuration diagram of a thin film forming apparatus showing a first embodiment of the present invention.
  • the apparatus shown in the figure has four decompression chambers (process chambers), a sputter chamber 101a for metal thin film and a sputter chamber for absolute thin film, respectively. It has four different functions: 101b, cleaning champion 101c, and oxidation champion 101d.
  • Numeral 102 is a loading channel of the wafer, which is used when setting the wafer in the apparatus.
  • Reference numeral 103 denotes an unloading chamber, which is a channel that is used when the bar is extracted from the device.
  • 104 is the transport port This is called a channel, and is used to transport the wafer to a predetermined chamber in each of the above-described four process channels.
  • the transfer of 06 c is performed using, for example, an electrostatic adsorption type wafer chuck 114. That is, a wafer is obtained by the electrostatic chuck 11.4.
  • a predetermined channo uno and a holder 107a are provided. Set the eno on top of ⁇ d.
  • the 108 a to 108 d are called target chambers, and each allows replacement of the target material 109 a to 109 d without breaking the vacuum.
  • an RF power supply 111a to 111d is connected via a tuning circuit 110a to 110d, and a wafer holder 107a to The RF power supply 113a-l13d is connected to 107d via the tuning circuit 112a-112d, respectively.
  • the tuning circuit 112a-112d respectively.
  • Fig. 1 (a) shows the structure where the target and the wafer face vertically, and the target is located just below the wafer.
  • a heavy target may be held below and a wafer may be held above.
  • the target drops even if the power supply voltage of the electrostatic chuck temporarily fluctuates and the attraction force weakens. That accident can be prevented.
  • garbage or garbage adhering to the wafer falls on the target, it contaminates the target and improves the quality of the thin film formed by sputtering. This causes problems such as deterioration.
  • FIG. 2 (a) it is more effective to adopt a structure in which the target 109a and the wafer 106a face each other in the left-right direction. In this way, the problem of dust attachment for both wafers and targets is almost eliminated.
  • a method in which the target 109a is inclined slightly upward may be adopted. This not only makes it easier to hold the heavier target, but also eliminates dust from adhering to the eno and surface, and also reduces the dust from the eno to the target. This is an extremely effective arrangement, as it will not fall.
  • Figure 3 Capacitor Are formed on the N + diffusion layer 302 formed in the silicon substrate 301 through the openings formed in the insulating film 303 through the A J2 thin films 304 and A Jl 20. It has a three-layer structure of three films 305 and A thin film 306, and is a capacitor structure realized for the first time using the device of the present invention.
  • an N + diffusion layer 302 is formed on a silicon wafer 301, and an insulating film 303 and an opening formed on the N + diffusion layer are formed thereon. 6
  • the wafer After evacuating the loading chamber, open the gate valve 105 e and hold the wafer with the electrostatic chuck 106 c to hold the transfer boat chamber. Bring the wafer in and close the gate knob 105 e. Next, the wafer is set in cleaning channel 101c.
  • the extremely thin natural oxide layer and the adsorbed molecular layer formed on the surface of the N + diffusion layer 302, especially the adsorbed molecular layer of water, are kept at a low temperature (150 or less), and the underlying silicon is removed. Can be removed without giving any damage to the application.
  • the Ar ion generated by the RF discharge is not damaged in the Si crystal at all times (eg, several eV to 30 eV, preferably 5 eV or less). (Preferably with a kinetic energy of 2-3 eV).
  • Such cleaning of the surface is extremely important in achieving good electrical contact between the AJ2 thin film 304 and the N + diffusion layer 302. That is, An ideal metal-semiconductor contact can be obtained without a subsequent heat treatment step.
  • the wafer is transported to the metal thin film sputtering chamber 101a.
  • AA thin film 304 is formed on the wafer by sputtering method using AJ ⁇ target and solution 109a in sputtering chamber 101a. .
  • the venom is transported to the Odani channo 101d.
  • This oxygen gas in a state of heated pressurized to a temperature of at this ⁇ E eight at 3 0 0-5 0 0 is supplied, on the order of about 5 0 A Ri by the thermal acid I spoon to A J2 thin film surface A JZ 2 0 3 A film 3 05 is formed. Thereafter, the wafer is transported again to the channel 101a to form the AJ2 thin film 303. In this way, the three-layer structure of A J2 — A SL a03 1 A J2 is transported again through the trans-port channel 104. Returned to wafer stage 107 f in unload channel 103. After closing the gate valve 105 f, return the unloading chamber 103 to atmospheric pressure and take out of the device.
  • Figs. 4 (a) and (b) 11 detail the structure of a metal thin film sputter chamber 101a, which is one of the process chambers. It is a schematic diagram, and shows a transfer boat 104, a target chamber 108a, a hoe, a holder 107a, and a gate knob 1. 05a, target 109a, target holder 401, etc. are also drawn at the same time.
  • Fig. 5 also shows an example of the connection relationship between the vacuum exhaust device and the gas supply device, centering on the metal 'thin film sputtering chamber 101a.
  • the same parts as those in FIGS. 1 and 4 are denoted by the same reference numerals.
  • a turbo molecular Po down flop 5 0 having a B over terpolymers of the magnetic levitation system if example embodiment as a vacuum exhaust system to process Ji catcher down Roh 1 0 1 a Rotary pump 502 is connected as 1 and its backup.
  • Numeral 503 denotes an oil trap which prevents oil knock from a single-purpose pump.
  • a method to further increase the ultimate vacuum of the chamber for example, by connecting two-stage turbo molecular pumps in series, is proposed. It is good.
  • a structure may be employed in which a dry pump or the like which is resistant to a gas load is used.
  • a dry pump is a turbo molecular pump designed to be able to draw from atmospheric pressure to high vacuum.
  • Ball bearings are used to support the rotor rotating at high speed and to keep the temperature of the rotor from rising, by wiping the oil with high pressure to reduce friction and release heat. ing. Although this for oil is sealed using the N 2 gas in the jar does not cause pollution to enter the vacuum system, significant damage to the vacuum tea and N 2 gas is also ten thousand gar it stops during operation Therefore, care must be taken when using it. !
  • the transport chamber also has a similar evacuation system.
  • the target chamber also has a similar evacuation system, and each chamber is configured so that evacuation can be performed independently of each other.
  • I have. 5 0 4 Ri Der gas supply device, A r, H e, are summer Ni Let 's that can supply gas such as H 2 in the process ya down Roh 1 0 1 a.
  • Ar gas is constantly supplied at a constant flow rate (for 1 to 5 ⁇ Z), and is purged out of the system by a purge line 505. Only when sputtering is performed, the valve 506 is opened, and a part of the gas is con- trolled to a small flow rate of 1 to 10 cc / min by the mass flow controller 507. Trolled process Introduced to Channo 101a.
  • a moisture meter may be attached to the tip of the purge line 505 to confirm that the dew point is less than 110 t.
  • the surface of the stainless steel is mirror-polished without a work-affected layer, but the inner surface of the pipe is, for example, electrolytic polished, and the inner surface of the chamber is electrolytically polished. Perform using.
  • purging is performed using Ar or He having a water content of about 1 PPb or less, and the temperature is further raised to about 400.
  • Performs purge Te after H 2 0 molecule almost completely desorbed adsorbed on the surface, arrows content of Ri water flowing pure oxygen below about 1 ppb, 4 0 0 ⁇ 5 5
  • the temperature rises to oxidize the inner surface.
  • the oxide film obtained by thermally oxidizing the stainless steel surface has a higher HC, HC, than the conventional passivation film formed using nitric acid or the like.
  • Fig. 7 (a) shows the configuration of the experimental apparatus. That is, the Ar gas passed through the gas purifier 60 1 was passed through the sample SUS pipe 62 at a flow rate of 1.2 J2 / min, and the amount of water contained in the gas was APIMS (atmospheric pressure ionization). Measured with a mass analyzer (603).
  • the result of barge at room temperature is shown in the graph of Fig. 7 (b).
  • the types of pipes tested were those in which the inner surface of the pipe was electropolished (A), those that were subjected to passivation treatment with nitric acid after electropolishing (B), and those that were passivated by oxidation. ('C), which are indicated by the lines A, B and C in FIG. 7 (b), respectively.
  • Each tube was left in a clean room with a relative humidity of 50% and a temperature of 2 for about one week before conducting this experiment.
  • a and B in Fig. 7 (b) a large amount of water was detected in both the electropolishing tube (A) and the electropolishing tube (B) that was passivated with nitric acid.
  • test pipe 602 was energized and heated by a power supply 604, and the temperature of the pipe was changed in accordance with the heating time chart shown in FIG.
  • the temperature is changed from room temperature to 120:, from 200 to 200, then from 300 to 300
  • the average value of the amount of water coming out is summarized. It is shown in Table 1.
  • the surface of the oxidized stainless steel releases less than one digit of water. This means that the amount of water adsorbed is small and the water can be easily desorbed, indicating that it is optimal for supplying ultra-high purity gas. .
  • Table 2 shows the thickness and refractive index of the oxide film formed on the surface when SUS316L and SUS304L are oxidized with ultra-high purity oxygen as a function of the oxidation temperature and time. It is a thing. It should be noted that the oxide thickness is not dependent on time, but only on temperature. This suggests that US acid is progressing through a process described by the Cabrera and Mott model. In other words, if the temperature is controlled and kept constant, the oxide film grows up to a desired thickness, so that a dense oxide film having a uniform thickness and no pinholes can be formed.
  • Thickness (A) Refractive index
  • Thickness (A) Refractive index
  • Figure 9 is a graph showing the results obtained by oxidizing SUS316L at 500 for about 1 hour and then examining the surface element distribution by ESCA. It can be seen that the concentration of Fe is high near the surface and the concentration of Cr is high in the deep part.
  • the oxide has a two-layer structure with Fe oxide near the surface and Cr oxide near the interface between the oxide film and the SUS substrate. ing. This is due to the fact that, as a result of the energy analysis of the ESCA spectrum, chemical shift due to oxide formation was observed at Fe near the surface, and this was not a deep part. Also, it has been confirmed that chemical shift due to oxide formation is observed only in deep parts of Cr. There has been no report that such a two-layer film was formed by the oxidation of SUS so far, and the decompression device according to the present invention exhibited excellent corrosion resistance and desorption characteristics of adsorbed gas. The mechanism shown is not yet clear, but is thought to be due to the formation of this dense two-layer film.
  • a film having a thickness of about 10 O A was used, but the same effect can be obtained if the thickness is 50 A or more. However, if the film thickness is less than 50 A, binholes are generated and the corrosion resistance is deteriorated, so that the film thickness is preferably set to 50 A or more.
  • the surface affinity is R max
  • the target material is also fully purified to ultra-high purity by removing impurities, and then gas components such as oxygen are removed by vacuum melting.
  • the entire holder 107a will be described with reference to FIG. 4 (a).
  • the entire holder is connected to the outer wall of the chamber by bellows 403 so that it can be moved up and down.
  • the silicon wafer 404 is moved up and down while adsorbing it on the electrostatic chuck electrode 405, and the wafer is moved into and out of the process chamber 101a.
  • the entire wafer holder 107 a is raised, and the orifice 406 is pressed against the flange surface 407 of the chamber.
  • the hermetic seal between the transfer boat chambers 104 is also made at the same time.
  • a metal seal that retains elasticity for many attachment / detachment operations and has excellent sealability.
  • the elastic resin orifice 1001 shown in Figs. (A) and (b) expands and contracts within the range of elasticity (that is, plastic deformation occurs).
  • a J2, Ni, SUS316L, Ni-coated stainless steel or other metal plate panel-shaped ring 1002 And are valid.
  • the sealing surface is in contact with a metal surface (this surface can be a mirror surface with a R max of 0.2 m or less, which can further reduce leakage).
  • the crimping force holding and holding the seals is supplied by the rubber orifice of rubber 1001, so that not only good airtightness can be obtained, but also It can be returned and used.
  • the opening 1003 of the leaf spring-shaped ring 1002 is preferably provided on the lower vacuum side.
  • Et al is, the rubber 1 0 0 1, and this to prevent stagnation distillate gas to the inside 1 0 0 4 and the opening 1 0 0 3 and inner 1 0 0 4 if provided cutout communicating It is more preferable because it is possible.
  • This notch is crushed when the ring 1002 is pressurized, and the inside 1004 is sealed. Communicates with the internal 1 0 4 on the board A hole may be provided.
  • FIGS. 10 (c) and (d) show a structure in which two plates are welded at their ends to form a plate panel, and a contact portion with a flange surface is flattened. It is preferable that this contact surface has a mirror surface of R max 0.2 ⁇ or less.
  • Fig. 10 (d) shows an example in which both ends of the plate are welded together to seal the inside of the panel-like ring 1002. In this example, not to preferred Ri by rubber 1 0 0 1 or et al for Ku made without the Tsu gas release kettle to the outside 0
  • the opening is sealed by the gate valve 105a, and the process channel and the transporter are closed. The airtightness between the chambers is maintained.
  • the seal 408 may be used for this seal, but it is more effective if a metal seal as shown in FIG. 10 is used. There is no problem even if other sealing methods are used as long as sufficient airtightness is maintained.
  • the position is determined by the force that crushes 4 06 Instead, as shown in the enlarged view in Fig. 4 (c), insert a non-deformable stone, ⁇ 4201, so that the relative position is always constant. It is better to do so. As a result, the ring 406 is always compressed with a constant force, and a stable sealing characteristic can be obtained.
  • a metal ring as shown in Fig. 10 is used instead of a talent ring.
  • this stopper should be placed on the lower vacuum side so that there is no dead zone on the high vacuum side.
  • Reference numeral 405 denotes an electrostatic chuck electrode for holding a wafer, which is made of, for example, stainless steel, Mo, Ti or the like, and has an insulative surface. Is formed. Absolute ⁇ coating, for example a A J2 3 0 3, A JZ N is formed on the electrode surface in flops la Zuma spraying, it is then by Ri planarized polishing the surface.
  • the thickness is, for example, about 10 to 100 ⁇ m.
  • the temperature control of the eno can be performed very accurately.
  • An electric potential is applied to the wafer by the metal electrode 410, which is insulated from 405 and connected to a power supply outside the system.
  • the structure is such that the potential of the electrode A is taken from the center of the electrode by the electrode 410 from the center of the anode, but it may be taken from the periphery.
  • the temperature is taken from the periphery, it is easier to achieve in-plane uniformity when controlling the temperature of the wafer when the hole is opened in the center of the wafer holder as shown in the figure.
  • the entire electrode 405 is electrically isolated from the jumper by the insulation insulator 411. Further, high-frequency power having a frequency f w is externally supplied to the electrode 4 05 by 4 12.
  • Fig. 4 (b) shows an example of the connection relationship between the electrode 405 and the electrode 404 and the external power supply.
  • Reference numeral 4101 denotes a DC power supply for an electrostatic chuck, which is a high-frequency filter that cuts high frequencies and supplies only a DC potential.
  • a DC potential difference Vc is given between 400 and 405.
  • Reference numeral 4103 denotes an RF power supply having a frequency fw of, for example, 100 MHz, and includes a matching circuit 4101 and a blocking capacitor 4105. High frequency power is supplied to the wafer through the introduction electrodes 4 1 and 2 via the intermediary electrodes.
  • the DC potential of 4004 can be set to a predetermined value. It is getting ready.
  • the DC potential of the wafer can also be changed by changing the matching conditions of the matching circuit 4104.
  • the potential of the inverter is monitored by a voltmeter via a high-frequency filter, and this is fed to the controller of the RF power supply, and one layer is fed to the controller of the matching circuit.
  • the DC potential on the wafer surface can be controlled accurately to a constant value.
  • the wafer potential set in this way it is possible to precisely control the ion energy incident on the wafer surface from the plasma to a desired value. It is possible.
  • the circuit of 106 is a circuit that maintains a sufficiently high impedance with respect to the frequency f w and short-circuits the high frequency of the frequency f ⁇ , whereby the DC potential of the wafer becomes It is controlled only by the high frequency of fw applied to the wafer holder.
  • This circuit for example, using a parallel resonance circuit of L and C,
  • the potential of the device I may be directly controlled by a DC power supply.
  • the potential of the wafer that is, the potential on the wafer surface is controlled by, for example, turning on the switch 410 and using the DC power supply 410. Can be done.
  • reference numeral 413 denotes a heater, which is used to heat the electrode 405 of the wafer holder to a predetermined temperature by flowing a current.
  • the UNO 404 since the UNO 404 is strongly adsorbed to the electrode 405 by the electrostatic chuck, it can be uniformly heated to the same temperature as the electrode. The wafer temperature can be controlled accurately.
  • reference numeral 4 14 denotes a fiber thermometer, which measures the temperature by extracting the emission of black body radiation with an optical fiber, and completely eliminates noise such as RF. Accurate temperature measurement can be performed without being affected. By feeding back the measurement result to the heater controller, accurate temperature control can be performed.
  • discharge heating is performed using a large number of plasma torches, and each discharge current is controlled to achieve a more precise temperature.
  • the distribution may be controlled.
  • One of the major features of the apparatus of the present invention is that, in the process chamber, there is almost nothing considered to be a source of contamination, such as a wafer transport mechanism and a wafer heating mechanism. It has not been inserted. As a result, the process chamber is kept highly purified, and a high-quality thin film can be formed. In addition, the heating mechanism is completely separated from the vacuum tea and is placed in the atmosphere or at normal pressure, so there is no risk of contamination and it is easier to heat it evenly. ing.
  • Ri holder electrode der, stearyl down less, T i or M o metal or al can be your Ri the table surface, such as in example A J2 2 0 3, AAN and S i 0 2 such as absolute ⁇ film Covered and electrostatically chucked.
  • the metal target 109 a is supplied with a potential from the back surface by the electrode 416, and a potential difference generated between the metal target 109 a and the holder electrode 415. It is electrostatically attracted and held.
  • Reference numeral 420 denotes an insulative material, which electrically insulates the holder electrode 415 from the jumper.
  • Reference numeral 417 denotes a magnet for magnetron discharge
  • reference numeral 418 denotes a pipe for flowing a refrigerant for target cooling. If the diameter of the ground shield is larger than the diameter of the target holder, it may not be provided.
  • Reference numeral 419 denotes a ground shield for preventing the target holder from being sputtered. This ground shield was not mentioned in the description of the wafer holder 107a, but it goes without saying that the ground shield may be provided in the same manner for the eno and the holder.
  • the target holder 401 also has a bellows seal 420, like the venom and holder 107a, so that it can move up and down.
  • a bellows seal 420 like the venom and holder 107a, so that it can move up and down.
  • the gate valve (not shown) closes the opening as in the case of the wafer holder.
  • the target material is replaced by a mechanism as shown in FIG. 11, for example.
  • Fig. 11 (a) shows a disk-shaped target stocker that holds three target materials, for example, 3 1 1 1, 1 1 0 2, 1 1 0 3 It is 1105 and has a cutout portion 1104 in part.
  • the same figure (b) shows the cross section at X-X ', and the electrostatic capacitance shown in Fig. 4 (a) is almost equal to 401.
  • This is a chuck type target holder that has a bellows 420 and moves up and down. If, for example, a target of 1102 is to be mounted on this target holder 401, the target stocker 1105 should be kept on the rotation axis 1106. Rotate it aside and bring the target 1102 directly under the electrostatic chip type target holder electrode 4 15.
  • the electrode is lowered, and the target 1102 is electrostatically attracted to the target holder.
  • the holder electrode 4 15 moves only in the vertical direction, the surfaces of the holder electrode 4 15 and the target 1 10 2 must be exactly aligned.
  • a plate tip such as 1107 is placed on the target storage device 1105, and the target holder 410 is placed on the target holder 401.
  • the surface 1 1 0 2 ′ is given a degree of freedom so that the surface 1 1 0 2 ′ coincides with the surface of the holder by the force pressing the substrate 1 1 2.
  • the holder electrode 4 15 that has absorbed the target rises again, and the target stocker is moved so that the cutout 110 4 comes under the holder electrode. To rotate. The holder 4 15 extends below this notch and the process channel 10 1 a The target is inserted into the target, and the arrangement is as shown in Fig. 4.
  • the load lock exchange mechanism of this target can be used in the same manner as the metal thin film sputtering chamber shown in FIG. 4 as well.
  • a conductive material 1108 such as a metal may be provided on the back surface thereof. This may be done by attaching a metal plate, or by forming a metal thin film by sputtering or the like.
  • the target stocker does not need to be in the shape of a disk, but may be in the form of arranging targets linearly and sliding in the left, right, front and back directions.
  • each of the process channels (101a to 101d) in FIG. 1 may be separately provided, or the target channel 108 may be provided separately.
  • All of a to l08d may be a single common chamber, and a common stocker may be provided.
  • the target can be held by the target stocker by gravity as shown in Fig. 11 or by electrostatic chuck or mechanical holding method. May be adopted. In particular, when the target and the wafer are arranged as shown in Fig. 2 (a), such a holding method is suitable.
  • the cooling pipe (Fig. 4 (a) 4 18) has been used as a target because the temperature in the spatter has increased sharply. Forcibly cooled from the back side of the target holder by using a heat sink.However, in order to improve heat conduction from the target to the holder, the holder is usually cooled. It was necessary to use a screw or the like to secure the damper with strong force.
  • the target replacement is usually performed by breaking the vacuum of the process channel 101a, and only when the target material is worn out.
  • the target can be easily replaced by introducing a target holder using an electrostatic chuck, so that one chamber can be used.
  • the deposition of various types of materials has become possible, and the function of the device has been greatly expanded. More importantly, it is no longer necessary to screw down the target.
  • the stopper screw was made using the same material as the target material, but there were problems such as difficulty in processing.
  • the target material is highly purified to a purity of 6 N to 7 N or more, the size of each crystal grain increases to several millimeters or more, and the grain boundary is formed during processing. Because of the cracks, complicated machining was not possible. For this reason, parts that require fine processing such as screws have to use materials whose purity has been reduced to about 3 N at present.
  • the device of the present invention uses an electrostatic chuck type holder, no screw or the like is required at all, and the shape of the target is also reduced.
  • the processing is extremely simple, such as a simple disk shape, so that not only can high-purity materials be used, but also so-called cutting margins can be reduced when manufacturing targets.
  • the expensive high-purity target material can be used without waste, and the economic effect has been greatly enhanced.
  • a thick target had to be used as a target.
  • a target was not provided when a magnet was provided behind the target.
  • the magnetic force is absorbed, and the magnetic field in the film forming space is weakened.
  • a very thin target can be used in the device, it is possible to apply a strong magnetic field to the film formation space, and to form a thin film having good film quality at a high speed . This is possible.
  • the potential difference between the electrostatic chuck electrode 415 and the target 109a is determined by the DC power supply connected via the high frequency filter 4102. Granted by 4109.
  • the potential of the target is supplied directly at 410, and the contact is taken at the center in the figure, but it may be taken, for example, from the periphery of the target.
  • the power supply 410 it is preferable to adopt a method of using a battery for backup in order to prevent the target from dropping in the event of a power failure or the like.
  • the DC potential of the target may use a self-bias generated by the RF power supply 411, but when the target is made of a metal material, for example, the switch 411 is closed.
  • 4 11 6 is a circuit having the same function as 4 10 6, which is open only to the frequency f T of the RF power supply 4 11 3, and almost open to other frequencies. Usually grounded circuit. However, it is open to DC. (4) Since the power of the high-frequency power supply (frequency fw) for controlling the electric potential of c is usually small, it is not always necessary to provide 4116. In general, it is better to use an RF power supply 4103 connected to the power supply, such as 13.56 MHz, for the 4113, which has a lower frequency than the RF power supply. .
  • FIG. 12 shows the current-voltage characteristics of the target for three different frequencies of 14 MHz, 40 MHz, and 100 MHz
  • FIG. 4 (b) shows the target current-voltage characteristics. 1 1 1 of the sweep rate Tsu experiments theta blood was the value of the current flowing through the DC power supply 4 1 1 2 as a function of the closed V T and blots.
  • the point where the current value becomes 0 corresponds to the self-bias value, that is, the target potential that appears when the switch 411 is opened.
  • the self-bias value decreases as the frequency is increased.
  • the sputtering speed is increased by using a low-frequency (f ⁇ ) RF power source on the target side, and the high-frequency (fw) RF is applied on the wafer side.
  • f ⁇ low-frequency
  • fw high-frequency
  • the target shown in FIG. 4 (b) -2 may be used as an electrostatic chuck type target holder.
  • the RF power, the thin-film insulating film 409 is interposed between the target holder and one electrode 415 by capacitive coupling, while the DC power supply 4109 Is input to the target holder electrode 4 15 alone via the high frequency filter 4 102.
  • the DC power supply 4109 Is input to the target holder electrode 4 15 alone via the high frequency filter 4 102.
  • a similar configuration may be adopted for the wafer holder.
  • the impedance to w becomes 0 when viewed from the wafer side, and f W Is short-circuited, while the impedance to f ⁇ as viewed from the target side is 0 and short-circuited to f ⁇ . Therefore, for example, if f ⁇ is set to 13.56 MHz, it is possible to prevent 13.56 MHz from being put on the eno. In this way, it becomes possible to accurately control the energy of tapping the wafer. It is preferable that the LC circuit be provided symmetrically, as shown in Fig. 4 (e).
  • FIG. 13 (a) is a drawing for explaining a method other than the electrostatic chuck and in which the target can be load-locked and exchangeable.
  • Reference numeral 1301 denotes a target material, and a thin plate 1302 of, for example, iron, nickel, chromium, or the like is attached to the back surface thereof.
  • Reference numeral 1303 denotes a magnet, and the magnetic force attracts the thin plate 1302, and the target is attracted to the target holder 1304 by this.
  • the target 1301 and the thin plate 1302 may be screwed, for example, from the back surface of the thin plate. By doing so, there is no contamination problem since no screw material comes out on the target surface.
  • the magnet 133 may serve also as a magnet (FIG. 4 (a) 417) for magnetron discharge. This may be a permanent magnet, but it is an electromagnet to make it easy to attach and detach the target.
  • the target may be attached or detached by turning off the excitation current.
  • the permanent magnet 13 0 5 is directly taken.
  • the magnetic force may be attracted by a magnetic force between this and the magnet 133 provided on the back of the holder 134.
  • a permanent magnet is placed just behind the target, so that a large magnetic field is formed on the target surface and discharge can be performed efficiently even at low gas pressure. This is the point that the ion density can be increased and the sputter speed of the target can be increased.
  • a mechanism such as a commonly used target shutter may be provided in the sputter jumper.
  • the entire system is compatible with ultra-high vacuum, and the use of ultra-high-purity gas eliminates the need for frequent cleaning of the target surface.
  • the operation may be performed with the gate valve 105a closed.
  • the power of the RF power supply 4113 is made sufficiently small and the sputtering of the target material 109a is performed.
  • the surface should be sputtered with a Pierce value below the threshold value of the target, which eliminates the need for target material. Does not accumulate on the inner surface of the chamber.
  • the frequency of the RF power supply 4 11 3 applied to the target should be higher than the 13.56 MHz used for the metal thin film, for example, 100 MHz. Ray.
  • a higher frequency for example, 200 MH 2 or It is better to use a higher frequency.
  • the irradiation energy of this Ar ion is determined by the self-bias generated in the wafer by the RF power supply of 4103.
  • Kuri One The surface is mainly composed of a very thin native oxide film layer and an adsorbed molecular layer, especially a water adsorbed molecular layer, formed on the surface of silicon or other materials, so it is several eV or at most 30 eV. Ir particle of kinetic energy of irradiate.
  • the frequency of the RF power supply 4103 may use a large value, for example, 100 MHz.
  • a frequency of 200 MHz or more may be used, but a value very different from the frequency f ⁇ of the target may be used to prevent a stroll between the target and the wafer.
  • the DC potential of the target and the DC potential of the target can be independently controlled to an optimum value.
  • the target 109 a only the case where an inexpensive material is used has been described. However, even if the material is a conductive material such as Si, for example, the self-bias value is small. It is only necessary to be able to set a sufficiently low value that does not cause tiling. In particular, since it is not necessary to frequently exchange with the target material 109a, the load lock exchange mechanism of the target need not necessarily be provided.
  • the gas used may be Ar, but a gas such as H 2 or He may be used.
  • a gas such as H 2 or He
  • Ar gas is obtained.
  • the carbon atoms adsorbed on the Si surface are also effectively removed from the H ion by the H ion. it can . .
  • impurities molecules such as H 2 0 and 0 2 in or not I in gas is mixed, since a result contaminate the front surface
  • ultra-high purity gas supply system FIG. 5 5 0 It is important to use 4).
  • the cleaning chamber described above has the function of irradiating the sample surface with ions having a small kinetic energy of several eV to 30 eV. Therefore, it is very important to obtain a good interface when forming a multilayer thin film structure.
  • the low-energy ion is used in this way, the underlying substrate is not damaged at all.
  • this cleaning does not need to raise the temperature of the substrate, and can be performed at room temperature. Therefore, it is not necessary to equip the 4 13 heater.
  • RF 4103 is applied to the wafer susceptor has been described as an example, but in order to more accurately control the energy of the Arion, Is preferably a circuit shown in FIG. 4 (d).
  • the LC circuit is in a parallel resonance state, and when the earth 423 is viewed from the Ueno holder 201, the impedance becomes negative, and the potential of Jehachi is reduced. It approaches the potential of the plasma infinitely. That is, the energy of the Ar ion illuminating the wafer approaches zero. Therefore, if the values of L and C are slightly shifted from the values satisfying the above conditions, the energy of the Ar ion can be accurately controlled even in the range of 0 to 5 eV. become.
  • the oxide channel 101d will be described in detail. Since the basic configuration of the oxide chamber is the same as that of the metal thin-film chamber 101a, FIG. 4 (a), FIG. 4 (b) and FIG. It will be described using FIG. Ultra-pure argon and oxygen gas can be introduced into this chamber from the gas supply system 504.
  • the wafer is heated using a heater 41-3, and the temperature of the wafer is set to, for example, 100 t: an arbitrary value in a range of ⁇ 450. Can be set to. Approximately 30 people were heated on the surface by heating 404 silicon with __ ⁇ on the surface in a high-purity oxygen gas atmosphere, for example, at 400 t for about 1 hour.
  • a direct oxidation of A J2 may be achieved by first introducing oxygen gas into the chamber and raising the temperature of the wafer at atmospheric pressure, or by first increasing the pressure in a vacuum. After heating, oxygen gas may be introduced. Further, the pressure of oxygen may be carried out in a reduced pressure atmosphere lower than the atmospheric pressure, or may be carried out at a high pressure.
  • Decompression oxide 0 2 gas Shi flow lengths et performs by Ri evacuated to the evacuation device (5 5 0 1), to the pressure of oxygen may be adjusted, it was or, for example, A r gas May be diluted. Before oxidation with oxygen, it is better to perform annealing in a vacuum atmosphere or Ar atmosphere for about 30 minutes at 400 ° C. This is because the sputtered AJZ thin film contains several ppm of Ar gas, which has the effect of releasing this gas out of the film. This is because a better quality oxide film can be obtained if thermal oxidation of A is performed after that.
  • the target Fig.
  • the high-frequency power supply (410, 411) connected to the holder is not necessarily required. However, it is necessary in the following cases. For example Pas A J2 2 0 3 layers of film size when Tsu also a thickness Do value, For example 5 0 or more people Using target of A JZ 2 0 3 as a 1 0 9 a ho when upper needed, 4 1 1 3 to 1 3. 5 6 MH z, 4 1 0 3 and Shiteho 1 0 0 A high-frequency power supply of up to 200 MHz is used.
  • This chamber also has the same basic structure as the metal thin film sputter chamber of 101a, and therefore will be described with reference to FIGS. 4 (a), 4 (b) and 5.
  • the major difference between the present channel 110b and the metal channel sputter channel 101a is that the target material 109b is an insulator. Therefore, on the back of the target, if an electrostatic chuck holder is used, see Fig. 11.
  • Reference numeral 508 denotes a wafer holder which transports the wafer by adsorbing the wafer surface around the periphery by means of an electrostatic chuck 509.
  • the arm of 510 moves up and down the electrostatic chuck at the required position, and is fixed to the transport vehicle 511, and the transport boat is transported together with the transport vehicle. Reciprocate freely in chunk 104.
  • the wings when the wings are moved in and out of the device, they also enter the loading and unloading chan- nels, 102 and 103.
  • this carrier it is desirable to use, for example, a linear motor that moves at high speed while magnetically levitating on the track 5 12.
  • a linear motor that moves at high speed while magnetically levitating on the track 5 12.
  • a type of transport vehicle that operates on wheels on rails may be used.
  • the transfer port channel 104 is evacuated.
  • Ar is flown from 10 sccm to 100 sccm through the transport port chamber 104 to 10 _ 2 to 10 " 8 Torr (it is rather the preferred 1 0 - 3 to 1 0-4
  • the transfer may be performed by setting the transport chamber 104 to a reduced pressure of about T rr).
  • k acts to reduce the frictional force that may be generated in the ⁇ -transport vehicle.
  • Such a device for single-wafer processing is suitable for high-speed processing, such as the time allowed to perform one processing on one wafer or within one minute.
  • a metal thin film such as AJZ
  • all processes are performed within one minute, including the time required to enter and exit the process chamber 101a. It must be completed. Assuming that the time required for film formation is 30 seconds, the time that can be used for opening and closing the gate knob 105a, taking in and out the wafer, and setting the process conditions is at most 30 seconds. To cope with this, a gate valve that can be opened and closed in about 0.5 seconds is required.
  • FIG. 14 (a) is a cross-sectional view of the high-speed gate valve used in the apparatus of the present invention, for example, between the process channel 101a and the transport chamber 104. This corresponds to the state in which the gate is closed.
  • 1401 is, for example, a thin plate having a Ti thickness of about 0.2 to 0.5 mm.
  • FIG. (B) of the figure is a view of the gate valve of (a) viewed from below.
  • the thin plate 1401 of Ti is attached to two arms 1442 and 1402 '. Therefore, it is supported by two points 1403 and 1403 '.
  • Reference numerals 1404 and 1444 ' denote bins for pivotally connecting the arm to the chunk, and the arm moves about this bin. That is, by moving the arm 1402, the 1401 moves.
  • a 1401 thin plate for example, a thin plate of Ti
  • the thickness of Ti In order to further reduce the NO mass, reduce the thickness of Ti to 0.1 mm or less and reinforce it by attaching it to the plastic plate. You may take other methods.
  • the surface of the reinforced plastic is coated with a metal material such as Ti, Mo, W, etc., it will be lightweight and durable. This method is desirable because it can be obtained. Even if such a thin plate is used, the inside of both chambers partitioned by the thin plate 1401 is at most a few T0rr. Therefore, there is no strength problem.
  • the material of the thin plate is not limited to Ti, and other materials such as diuramine may be used. Further, it is preferable that the surface of the thin plate 1401 to the seal portion 1405 is, for example, R max 0.1 ⁇ m or less.
  • reference numeral 1405 denotes a vacuum seal portion, and an enlarged view of this portion is shown in FIG. 14 (c).
  • reference numeral 1406 is made of an insulating material, and is fixed to the jumper wall 14407.
  • ⁇ 148 denotes a metal electrode, which is connected to one electrode of a DC power supply, not shown. The other electrode of this DC power supply is a gate valve.
  • 1 4 0 9 is the thickness ⁇ ⁇ ⁇ ⁇ ! ⁇ Insulation material of number 100
  • the gate valve By applying a voltage of about several hundred volts during 1401, the gate valve is sucked by electrostatic force, and vacuum sealing is performed by this force. It has a structure. Therefore,
  • a material having elasticity as 1409.
  • the mechanical strength and the suction force are realized by the above configuration.
  • an airtight sealing material 1 4 1 1 is provided on the drawing.
  • the sealing material shown in Fig. 10 is used.
  • the high-speed gate valve shown in FIG. The fact that a high-speed opening and closing operation has been realized using a large amount of gate valve 1401 and that the principle of the electrostatic chuck is used instead of using mechanical force for the vacuum seal. This is an unprecedented new feature. As a result, the time required for opening and closing is 0.2 to 0.5 seconds, which is much shorter than the conventional gate valve that required several seconds to several ten seconds.
  • the gate valve used here can be used only when the chambers at both ends of the gate valve are always at a vacuum of several Torr or less.For example, one of the chambers has the atmospheric pressure. If it returns to, it cannot be used in terms of strength. In such a case, for example, as shown in FIG. (D), the lightweight gate valve 1441 is opened, and a gate that seals with conventional mechanical force is used instead. It may be closed using the valve 1410. Gate valves such as Fig. 1 106a to 106d are usually used only in a high vacuum state with the channel on both sides. A high-speed gate valve is used only when returning the pressure of the chamber to atmospheric pressure by maintenance or the like. During the process, a high-speed gate valve can be used at all times.
  • the gates for 105 e and 105 f also have load chambers, unload chambers (102, 103) and transport chambers 10.
  • a high-speed gate valve should always be used for inflow and outflow between the four zones. However, when the wafer is moved in and out of the device, it is necessary to return it to atmospheric pressure with both 102 and 103, and the opening and closing speed is slow at this time. Use the conventional gate valve 1410, if you want. This knocks the eno Since this operation is required only when mounting or unloading the equipment with a switch, the wafer processing time is not lengthened.
  • Figure 15 (a) is a photograph of the surface of the thin film A formed in this way, observed with a Nomarski differential interference microscope.
  • an N-type (111) Si wafer was used. This ueno was first treated with a cleaning chamber 101c. That is, the frequency fw is 100 to 200 MHz, and the pressure is 1. One half to one 0 - 3 and T orr, was cleanings the wafer surface energy of irradiation A r ion-set to 2 ⁇ 5 e V.
  • a wafer bias of ⁇ 240 V is applied to the wafer, and 5 to 6 or more Ar atoms per A JI atom contributing to film formation are removed from the wafer. While irradiating the surface, it was grown to a thickness of about 1 m.
  • Fig. 15 (a) is for a thin film formed in this way.
  • Figure 15 (c) shows the surface of an AJZ thin film formed by a conventional DC magnetron sputtering device. You can see fine irregularities appear on the surface.
  • (t)) and (d) show that the samples of (a) and (c) are formed by the forming gadget at 400 respectively.
  • This is a photograph of the surface after heat treatment for 30 minutes in a gas atmosphere.
  • the surface (d) of the thin film formed by the conventional apparatus has a lot of hillocks and is very uneven, but the surface of the AJ2 thin film formed by the apparatus of the present invention (b) Has no hilo and no sock.
  • Fig. 16 shows the reflected electron beam diffraction pattern of the sample in Fig. 16 (a). As can be seen from the figure, black spots with a stroke were observed, indicating that a monocrystalline AJZ thin film was formed. The results of X-ray diffraction also show that a (111) oriented thin film has been obtained.
  • the thin film formed by the conventional apparatus is a polycrystalline thin film having many plane orientations other than (11 1), which may be the result of reflection electron beam diffraction and X-ray diffraction. They clearly came.
  • the present invention it became possible to grow a ⁇ crystalline thin film of A having a (111) plane on (111) Si, first of all, by using The contamination layer on the surface of the Si wafer has been completely removed by damage free by using Guccino 101c, and the Snottachanno for metal thin film has been removed.
  • Figure 17 shows the heights of the diffraction beaks at (111) and (200) as a function of wafer bias. At 0 V, only the (200) beak appears and it can be seen that the Cu thin film is a (100) oriented film. That is, the crystal structure reflects the crystallinity of the base Si. When the reflection electron beam diffraction pattern of this sample was taken, a Braggsbot with a stroke appeared, and the Cu of the ⁇ crystal was observed on Si You can see that it is growing. As is clear from Fig. 17, when the bias value of the wafer is increased, the beak of (200) becomes smaller, and conversely, the beak of (111) becomes smaller. Is getting bigger. If the bias value is 50 V or more, complete
  • the Cu thin film formed by using the apparatus of the present invention can be used for all kinds of wafers under the wafer bias condition even when performing the adhesion test using all kinds of adhesive tapes such as scotch tape. There was no peeling. This is because the surface adsorbed molecular layer of water was completely removed by the surface cleansing / Jungging process in the cleaning champer, which indicates that the effect of the present invention is extremely large. The result.
  • the specific resistance of the Cu thin film formed in this way is about 1.8 Qcm, which is much lower than that of pure AJ2 wiring, making it extremely advantageous for forming high-speed LSI wiring. It is.
  • FIG. 18 shows the structure shown in Fig. 18, and the characteristics of the short-circuit and the toki junction between Cu and the N-type (100) Si were evaluated. Immediately, a Si 0 182 02 was formed on the N-type (1 0 0) Si 1 801 and a contact hole 1803 was drilled. Thereafter, Cu184 was formed on the entire surface in accordance with the above-described process, and thereafter, pattern formation was performed using photolithography technology. These broses All the events were at 130 and were performed below.
  • Figure 19 shows the current-voltage characteristics of the Schottky junction obtained in this way. In the figure, (a) is the result at room temperature, and (b) is the data at 150 :. The n value obtained from the linear portion of the forward characteristic shows a value very close to 1.03 to 1.05 and 1 irrespective of the quiesce condition of ⁇ ⁇ ⁇ It can be seen that diode characteristics are obtained.
  • Figure 20 is a plot of the height of the shot and the height determined from these characteristics as a function of the substrate bias. Regardless of the bias value, almost the same value as the previously reported value of 0.58 V was obtained.
  • Cu was formed at room temperature. The highest temperature in the thermal process after the formation of the Cu thin film is 13 in the bottom bake of the registry during patterning.
  • the fact that ideal shot-key characteristics were obtained in a low-temperature process close to room temperature in this way is a fact that demonstrates the effectiveness of the cleansing process of the present invention. In other words, using this apparatus, ideal metal-semiconductor contact can be realized without any heat treatment step.
  • FIG. 21 shows a backscattered electron diffraction image of the Si thin film formed on the (100) Si wafer.
  • FIG. 1 109 a N of impurity concentration 3 1 0 18 cm -3
  • a Si thin film of about 0.5 m was formed using a mold silicon.
  • the wafer temperature at this time is 330 to 350.
  • Figures (a) and (b) show diffraction patterns of a sam- ble using two different cleaning conditions.
  • (A) shows the irradiation of the surface by the cleaning process. r The result when the ion energy was about 20 V, and (b) the result when the ion energy was 40 V.
  • a diffraction pattern containing Kikuchi lines is seen, and it can be seen that a highly crystalline evitaxil Si layer is formed.
  • a ring indicating the formation of polycrystalline silicon is seen in Fig.
  • the first layer A 30 '4 is formed in connection with the N + layer 302 formed on the mold 3 i substrate 301 and the AJ formed thereon by thermal oxidation.
  • £ 2 0 3 film 3 0 5 is AJ £ thin film 3 0 6 formed in the al, Ri by the and this to edge switch ing processed Re this key catcher Pas Sita structure is realized.
  • the structure important this this A J2 2 0 3 is thin about 3 0 people and thickness, and, because the relative dielectric constant is about 2 times the value of 9 and S i 0 2 dielectric constant A large capacity can be realized in a small area.
  • the oxidation mechanism is considered to be oxidized by an oxidizing agent that tunnels through the oxide film by an electric field.
  • the oxidation does not proceed further even if the time is increased. Therefore, a uniform oxide film can be formed over the entire surface of the AJ ⁇ thin film by exposing it to the oxidizing atmosphere for a sufficiently long time.
  • the AJ2 thin film formed while irradiating ion with spatchanno 101a has no irregularities on the surface such as hillocks when the temperature rises as shown in Fig. 15.
  • the first layer A thin film is in contact with the surface of the N + layer 302 at the contact hole 307, but the manufacturing process opens the contact hole.
  • the interface between the AJ £ (304) and the N + layer (302) is exposed to the atmosphere, and the influence of the natural oxide film and the like formed on the surface of the N + layer at this time.
  • the contact characteristics are often defective, and this is one of the factors that reduce the yield and reliability of LSIs.
  • such a problem is caused because the first layer AJ2 (304) is formed after cleaning the surface with the cleaning chamber 101c. It hardly occurs.
  • the capacitor (FIG. 3) formed by the apparatus of the present invention not only can realize a large capacity with a sufficiently small area, but also has a high yield rate of the insulating film. It has a number of excellent characteristics such as high reliability and no poor contact with silicon.
  • the device according to this study is applicable to all metals. This is applicable to W, Mo, Ti, Ta, Cu, and Nb, which are beginning to be used for LSI wiring.
  • One of the features of this device is that the metal surface on which the film is formed is extremely flat, and a metal film can be formed without generating any hillocks even if heat treatment is performed.
  • T a deposition 4 0 0 1-6 0 0 T a 2 0 5 of 3 0 - 5 0 A if oxidized Ru resulting et al is a dense film.
  • T aa 0 the dielectric constant of 5 that Ki out and this to achieve a large key catcher Pashita capacity in a small area on the 2 2 der Ri is et al.
  • FIG. 22 shows a wiring structure formed by the same process.
  • Reference numeral 222 denotes a first layer A thin film, which forms a wiring for transmitting a signal.
  • 2 2 0 3 Ri A J2 electrode der provided partially through the 2 0 3 film 2 2 0 2, the power supply potential Oh Ru have is given the ground potential.
  • This is a structure in which a capacitor is connected to a part of the wiring.
  • a bootstrap of a dynamic circuit such as a shift register, a jib capacitor, etc.
  • a bootstrap capacitor requires a value approximately equal to the gate capacity.However, it forms a tick MOS transistor, and the gate is referred to as a capacitor. Was used.
  • a J2 is thin film formed was patterned to for step enters the surface after is is et to the atmosphere, then A ⁇ £ 2 0 3 click before film formation re Ningucha Nba 1 0 1 c Ri by the and the child that is responsible for click re-learning of the surface, good AJ £ - a £ 2 0 a free interface to say ho as a child that you can have and the child to form.
  • such a capacitor can be used for canopy which is frequently used in linear LSI. By doing so, the integration of linear LSI can be improved. By using it as the capacitance of the switch capacitor, various applications are possible, such as the ability to produce a resistor with a small area.
  • the following device can be produced by using the apparatus of the present invention. That is, after cleaning the Si surface with the 101c cleaning chamber, the Si02 is applied to the Si surface at the wiring channel 101d for about 3 times. 0 A is formed, and then a ferroelectric thin film is formed in an absolute thin film jumper 101 b. Its to the Chi catcher damper 1 0 1 a after the formation of the S i 0 2 film thereon Ri by the and this forming a S i, Po Li S i - S i 0 2 - ferroelectric thin one S A five-layer structure of i 0 2 1 S i can be realized. This is formed into a gate pattern and the source / drain is formed by ion implantation or the like.
  • an oxide superconductor thin film (for example, Y-Ba-Cu-0) can be formed. That is, after a thin film having a predetermined composition is formed by the channel 101b, the oxygen concentration is controlled by the chamber 101d.
  • any multilayer thin film structure required for an VLSI can be formed with excellent film quality and interface characteristics at a low temperature. It has come to be able to come.
  • the formation of wiring after the formation of the collector has a significant feature if all can be performed at room temperature, including the multilayer wiring structure. This is very important for applications such as ASICs (Application Specific ICs), which have a great deal of freedom.
  • ASICs Application Specific ICs
  • the fact that such a low-temperature process is possible means that there is a great degree of freedom in selecting chamber components and other vacuum components and other materials, and equipment design is very high. Also, there are some advantages that make it easier to manufacture.
  • the present invention has been described mainly for Si LSIs. However, it can be applied to any material such as a quartz substrate. not.
  • the decompression chambers 1001a to 101c are depressurized across the transport channel 104 at positions facing the gate valves 105a to 105c.
  • a movable arm that moves back and forth in the chamber 101a to 101c and has a gripping means for gripping the wafer at the end is provided. This movable arm can be transferred from the wafer by the gripping means at the tip.
  • the wafer 106 e to be processed is placed on the wafer holder 107 e in the loading chamber 102.
  • the loaded wafer 106 e is held by the gripping means at the tip of the movable arm 130 e, and the movable arm is trans-
  • Advance into the boat chamber 104 Open the gate knob '105e, move the movable arm 130e forward, and move it to the transport vehicle 1052 waiting at the transport chamber 104. No, hand over 106 e. After the transfer, the movable arm 130 e retreats, and after retreating, the gate valve 105 e is closed. On the other hand, the carrier 512 that has received the wafer 106 e moves on the track 511 to a position before the cleaning channel 110c. After stopping in front of the cleaning chamber 101b, open the gate valve 105c, move the movable arm 130c forward, and grip the wafer on the carrier.
  • the movable arm 130 e While holding the wafer, move the movable arm 130 e further forward, and place the wafer on the wafer holder 107 c of the cleaning chamber 101 c. Hand over. After the delivery, the movable arm is retracted, and the gate valve 105c is closed. The transfer of the wafer between the decompression chambers may be performed in the same manner. As described above, the wafer can be transferred without breaking the vacuum state.
  • the transport port chamber 104 the decompression chambers 101a to 101c, the load channel 102, An exhaust device is connected to the unload channel 103.
  • a laminated structure of various thin films used for an ultra-high-density integrated circuit can be obtained with excellent reliability and characteristics, and as a result, ultra-high integration and high reliability of the integrated circuit can be achieved.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

Le dispositif décrit, servant à former une fine pellicule, comprend plusieurs chambres à basse pression, un organe servant à faire le vide relié auxdites chambres et un organe d'amenée de gaz. Ledit dispositif comporte en outre au moins une première chambre à basse pression munie d'un organe servant à émettre sur une tranche un rayonnement d'ions d'énergie cynétique faible, en évitant tout dépôt de pellicule sur ladite tranche, au moins une seconde chambre à basse pression servant à former par pulvérisation une fine pellicule sur la surface de la tranche, ainsi qu'un mécanisme servant à transporter la tranche entre les première et seconde chambres à basse pression, tout en la maintenant sous basse pression.
PCT/JP1989/000023 1988-01-11 1989-01-11 Dispositif de formation d'une fine pellicule WO1989006437A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1501169A JP3057605B2 (ja) 1988-01-11 1989-01-11 薄膜形成装置
US08/213,079 US5906688A (en) 1989-01-11 1994-03-15 Method of forming a passivation film
US08/458,894 US5591267A (en) 1988-01-11 1995-06-02 Reduced pressure device
US08/872,467 US6074538A (en) 1988-11-01 1997-06-10 Thin film forming equipment
US09/085,238 US5989722A (en) 1989-01-11 1998-05-27 Reduced pressure device and method of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63/3522 1988-01-11
JP352288 1988-01-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US53654790A Continuation 1988-01-11 1990-07-10

Publications (1)

Publication Number Publication Date
WO1989006437A1 true WO1989006437A1 (fr) 1989-07-13

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Application Number Title Priority Date Filing Date
PCT/JP1989/000023 WO1989006437A1 (fr) 1988-01-11 1989-01-11 Dispositif de formation d'une fine pellicule

Country Status (2)

Country Link
JP (1) JP3057605B2 (fr)
WO (1) WO1989006437A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09209127A (ja) * 1996-02-05 1997-08-12 Idemitsu Kosan Co Ltd 真空蒸着装置およびその真空蒸着装置を用いた有機エレクトロルミネッセンス素子の製造方法
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
FR2940321A1 (fr) * 2008-12-19 2010-06-25 Carewave Shielding Technologie Machine de depot sous vide,sur un substrat,de materiaux en couches minces,par pulverisation cathodique.
WO2015166605A1 (fr) * 2014-04-28 2015-11-05 日新電機株式会社 Procédé de formation de film
CN105887049A (zh) * 2016-04-21 2016-08-24 郑亮 一种低温纳米疏水真空放电沉积镀膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179786A (ja) * 1983-03-30 1984-10-12 Hitachi Ltd 連続スパツタ装置
JPS61112312A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 真空連続処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179786A (ja) * 1983-03-30 1984-10-12 Hitachi Ltd 連続スパツタ装置
JPS61112312A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 真空連続処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09209127A (ja) * 1996-02-05 1997-08-12 Idemitsu Kosan Co Ltd 真空蒸着装置およびその真空蒸着装置を用いた有機エレクトロルミネッセンス素子の製造方法
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
FR2940321A1 (fr) * 2008-12-19 2010-06-25 Carewave Shielding Technologie Machine de depot sous vide,sur un substrat,de materiaux en couches minces,par pulverisation cathodique.
WO2015166605A1 (fr) * 2014-04-28 2015-11-05 日新電機株式会社 Procédé de formation de film
CN105887049A (zh) * 2016-04-21 2016-08-24 郑亮 一种低温纳米疏水真空放电沉积镀膜方法

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