WO1986002774A1 - Alteration focalisee d'un substrat - Google Patents

Alteration focalisee d'un substrat Download PDF

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Publication number
WO1986002774A1
WO1986002774A1 PCT/US1985/002109 US8502109W WO8602774A1 WO 1986002774 A1 WO1986002774 A1 WO 1986002774A1 US 8502109 W US8502109 W US 8502109W WO 8602774 A1 WO8602774 A1 WO 8602774A1
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WO
WIPO (PCT)
Prior art keywords
gas
site
substrate
alteration
ion beam
Prior art date
Application number
PCT/US1985/002109
Other languages
English (en)
Inventor
Edwin M. Kellogg
John Melngailis
Original Assignee
Ion Beam Systems, Inc.
Massachusetts Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Systems, Inc., Massachusetts Institute Of Technology filed Critical Ion Beam Systems, Inc.
Publication of WO1986002774A1 publication Critical patent/WO1986002774A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Definitions

  • This invention relates to alteration of a precisely localized site on a substrate, for example, creating an opaque deposit to correct a transparent defect in a photolithographic mask.
  • Photolithographic masks are used to pass light (usually ultraviolet light) to a workpiece in a specified pattern.
  • Such masks often consist of a clear substrate such as glass or quartz onto which a pattern of an opaque material such as chrome has been deposited.
  • a mask may develop or be manufactured with small defects or imperfections, for example pin oles in the chrome layer, that allow exposure of the workpiece in undesired locations.
  • it may be desirable to alter the pattern on the mask, by rendering a previously transparent site opaque.
  • Mask alteration should be. effective and chirable without complex processing steps that can intrOduce contaminants or cause further defects.
  • One way to repair mask imperfections involves a lift-off procedure using a positive photoresist.
  • the resist is applied to the affected area, exposed, and developed, after which any resist that was applied to a transparent imperfection is removed.
  • An opaque layer e.g., of aluminum, is deposited over the area, and any of the deposited layer that overlies photoresist is lifted off using a solvent that dissolves the resist.
  • Laser beams are also used to repair photolithographic mask defects, particularly opaque defects, by removing the undesired opaque material.
  • Gamo et al. (1984) Intern. Conf. on Solid State Devices and Materials (Kobe 9/1/84) and Gamo et al. (1984) Japanese J. Appl. Physics 23(5) :L293-L295 disclose the use of a focused or broad argon or gold ion beam in an atmosphere of trimethyl aluminum.
  • the resulting deposited film contains oxygen, carbon, and aluminum in varying ratios.
  • the technique is reported to be promising for mask repair or mask fabrication for optical, ion, or X-ray lithography.
  • Kellogg Ph.D. thesis. University of Pennsylvania, November 1965, discloses a method of making a self-supporting carbon target for helium bombardment by heating a nickel foil substrate in an atmosphere of methyl iodide to deposit a carbon film on the nickel. Hydrogen is released as a gas, and iodine is deposited as an amorphous layer on the walls of the chamber. The nickel is dissolved ' later to leave a carbon target.
  • the gases were provided as controlled atmospheres (10 -7 to 10-5 mbar) by means of a needle valve or by means of a small liquid container installed in a vacuum.chamber; the container temperature could be varied between -30°C and 40°C, depending on the gas.
  • the residual gas consists mainly of water, nitrogen, carbon dioxide, and argon.
  • the amount of deposited material increases with increasing molecular weight of the gas and with dose rate (between 1.5 x 10 13 and 1 x 10 15 cm-2 seconds-1) .
  • dose rate between 1.5 x 10 13 and 1 x 10 15 cm-2 seconds-1 .
  • the invention features apparatus and methods for alteration of a precisely located site on a substrate.
  • the apparatus comprises: a) a focusable ion source; b) a lens positioned to focus ions emitted by the source into an ion beam; c) a vacuum chamber for containing " the substrate site in the path of the ion beam; and d) a directed gas inlet positioned to provide a localized supply of a substance at the site whereby the beam interacts with the substance to cause the alteration localized at the site.
  • the substance is supplied as a gas that is adsorbed at the substrate site; the substance comprises a hydrocarbon, and the resulting deposit is a coherent carbonaceous deposit.
  • the substance comprises an organometallic compound (e.g. Al (CH 3 ) 3 o.r WF g ) .
  • the substance comprises an agent (e.g.
  • the directed gas inlet is preferably a jet formed of small diameter tubing that is angled with respect to vertical and ends a predetermined distance above the substrate, e.g. a distance on the order of the tubing diameter.
  • the equivalent gas pressure at the site during deposition is about 3 x
  • the beam energy is preferably between 25 and 70 keV (most preferably 30-50 keV) ;
  • the beam spot size is on the order of 1 micron or less; an image is formed by scanning the focused ion beam over the site without the presence of the hydrocarbon gas and by sensing charged particles such as ions or electrons emitted from the site; the ion beam spot size is on the order of 1 micron or less; and to repair the defect, the ion beam is repeatedly scanned over the defect site to overcome localized depletion of the substance.
  • the invention is particularly useful for repairing a defect site in a photolithographic mask, preferably by opacifying a transparent defect.
  • the invention is also useful for dual function substrate alteration--!.e. , apparatus that also can remove material, e.g. by sputtering, when an opaque defect is detected. This is so because localization of the gas used for opa ⁇ ification enables faster gas removal necessary for the material removal reqime.
  • the substrate can be imaged and the defect positioned in the beam path by scanning the substrate with the beam without the presence of the gas, and detecting the resulting charged particle emissions using a particle detector.
  • the use of the directed gas inlet provides local gas pressure high enough to enable deposition or creation of a thin film adsorbed at the substrate site, without excessively restricting the area that can be swept by the ion beam to scan the workpiece, e.g. by scanning the workpiece in a vacuum and detecting charged particle emissions.
  • the rate of deposit of material from the gas can be high enough (due to the enhanced local gas concentration) to overcome the rate of loss of material from ion beam induced sputtering.
  • Fig. 1 is a highly diagrammatic sectional representation of apparatus for repairing a mask.
  • Fig. 2 is a greatly enlarged diagrammatic representation of the mask repair process.
  • Fig. 3 is a partially sectional, diagrammatic view of the jet and adjacent portions of the apparatus for repairing a mask.
  • apparatus 5 for repairing a photolithographic mask includes, in general, ion beam source 10 and beam focusing column 20 arranged to deliver a focused ion beam 24 to vacuum chamber 30 through opening 32.
  • Wrthin' chamber 30 is an X-Y stage table 40 adapted to hold mask 35 in the path of ion beam 24.
  • a gas delivery system includes an inlet tube 50 (broken away in Fig. 1) extending through the wall of chamber 30.
  • a vacuum pump 60 communicates with chamber 30 through port 62 to evacuate the chamber.
  • Ion source 10 is a liquid metal ion source for generating a stable focusable ion beam.
  • suitable ion sources are disclosed in Clampitt et al., U.S. Patent 4,088,919, Jergenson, U.S. Patent 4,318,029, and Jergenson, U.S. Patent 4,318,030, each of which is hereby incorporated by reference.
  • the source includes a tip 12 from which metal ions are emitted under the action of extractor electrode 14 in a continuous and stable beam that can be focused by column 20.
  • Electrode 14 is insulated from tip 12 by electrical insulation 13.
  • Focusing column 20 includes lens 22 to deliver a focused ion beam through opening 32 in chamber 30.
  • an axial electric field between conductive elements 28 and 29 creates an electrostatic immersion lens 22.
  • Insulation 85 electrically insulates chamber 30 from focusing column 20.
  • a suitable focusing column is described in Wang et al. J. Vac. Sci. Tech. 19 (4) ;1158-1163 (1981) which is hereby incorporated by reference.
  • Ion source 10 and column 20 are capable of delivering a high-energy focused liquid-metal ion beam
  • a spot size of 0.1 to 1.0 microns (micrometers).
  • Ion beam energy should be great enough to enable focusing (at least 20 keV) .
  • a preferred range of operation is 25 to 70 keV.
  • a range of 30 keV - 50 keV is most preferable.
  • such energies are satisfactory for removing opaque defects, so that both types of defects can be repaired by the same piece of apparatus.
  • the apparatus includes an X-Y stage table 40 controlled by stage drive motor 42 connected thereto by a transmission shaft 44 through a sealed bearing in the wall of chamber 30.
  • the motor may be positioned inside the vacuum chamber.
  • Motor 42 is controlled by stage drive electronics 45, which in turn are connected to computer pattern generator and image display 46.
  • Display 46 is supplied by electron detector 48 with a signal representative of electrons generated by the collision of beam 24 with the mask to indicate the position of the beam on the mask as described in more detail below.
  • detector 48 can be used to detect ions emitted from the mask during beam bombardment.
  • An electron source (not shown) also can be provided _to neutralize charge build-up during ion bombardment for imaging.
  • Apparatus 5 also includes a means for controlling the beam direction. Specifically, an electronic beam deflector 26 is positioned inside chamber 30 at opening 32 to enable deflection of the beam according to a desired pattern as described below.
  • the gas delivery system includes a pressurized gas bottle 52 a regulator 54 and micro-leak valve 56 to deliver extremely low gas pressures (e.g., between about
  • this gas pressure should be low enough to avoid destabilizing the ion source or dispersing the beam as it travels through the vacuum chamber; at the same time, the pressure should be high enough to provide a deposition rate that overcomes sputtering.
  • the mask is placed on X-Y table 40 and chamber 30 is pumped down e.g., to 3 x 10 -5 torr.
  • Source 10 and column 20 are activated to direct a focused gallium ion beam 24 at mask 35.
  • detector 48 for example, a channel electron multiplier such as one manufactured by Galileo Electrooptics Corp. , Sturbridge
  • gas from bottle 52 is introduced into the defect region in a manner described in more detail below.
  • beam deflector 26 is activated by computer display 46 to scan the beam to cover the entire defect. For example, a raster scan can be generated to cover a polygon that covers the entire site with some overlap of the chrome layer.
  • carbon is locally deposited as described elsewhere herein, momentarily depleating the hydrocarbon supply at the beam spot.
  • Fig. 2 depicts in a very diagrammatic way the interaction between beam 24, and one possible gas (hydrocarbon gas) , and mask 35.
  • the chrome layer 81 on mask 35 ends at the perimeter of a transparent defect that is being repaired. The far side of that defect is not shown.
  • Beam 24, represented by broken lines, is scanning from left to right. Beam 24 is between 0.1 and 10 microns in diameter.
  • Hydrogen gas is formed and carbon atoms combine either with each other and preferably with atoms or compounds in the mask.
  • the carbon atoms may combine with the silicon of the silicon dioxide in the glass or quartz, releasing oxygen gas and forming a silicon carbide transition layer. On top of that transition layer, a tenacious, hard, opaque carbon layer is deposited, probably in amorphous (vitreous) form, and hydrogen gas is released.
  • hydrocarbon gas for any particular application depends inter alia upon the particular deposition apparatus employed, and upon the requirements for thin layer adsorption of hydrocarbon monolayers at the substrate surface site.
  • hydrocarbon whose vapor pressure is high enough to condense upon the substrate under the temperature and pressure conditions prevailing at the surface.
  • the hydrocarbon should be selected to have a vapor pressure high enough to avoid condensation under delivery tube conditions. Heat may be used to avoid such condensation; if heat is used, in certain instances a means of cooling may be employed to enhance condensation at the site.
  • a cooling heat exchanger is employed in the region of the directed gas outlet of the delivery tube.
  • the flow system and directed gas outlet are constructed and arranged to provide substantial cooling by adiabatic expansion.
  • the substrate is cooled by supporting it on a cooled surface, with a gas confined at the interface between the substrate and support, at a subatmospheric pressure greater than that of the surrounding vacuum chamber to provide a conductive medium that enables effective heat transfer from the substrate to the cooled support.
  • Fig. 3 shows a carefully positioned gas inlet 55 (e.g. a hypodermic needle or other small diameter tubing) angled slightly to direct the gas flow to the spot of impact of beam 24 on mask 35.
  • gas inlet 55 e.g. a hypodermic needle or other small diameter tubing
  • Inlet 55 is spaced a distance f above mask 35 on the order of (most preferably about equal to) the diameter of the opening of inlet 55 which has a diameter of between 125 y and 250 ⁇ .
  • Distance f may be adjusted to optimize deposition, and it is preferably between 0.02 and 0.2 mm. The distance can be up to about 1 mm.
  • Gas pressure at the sample is about 3 x
  • the substrate may be contained in a differentially pumped chamber having an opening designed to transmit the ion beam.
  • Gases other than those listed above can be used in the featured apparatus.
  • the gas can be hydrogen to reduce silicon oxide in the substrate to opaque, metallic silicon.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

On altère un site précisément localisé sur un substrat (35) en utilisant un appareillage qui comprend: a) une source d'ions (10) susceptible d'être focalisée; b) une lentille (22) positionnée de façon à focaliser les ions émis par la source en un faisceau d'ions (124); c) une chambre à vide (30) pour contenir le site du substrat dans la trajectoire du faisceau d'ions; et d) une conduite d'admission dirigée des gaz (55) positionnée pour fournir localement la substance gazeuse au niveau du site. Le faisceau interagit avec la substance pour causer l'altération localisée dans le site. L'invention porte également sur des procédés utilisés pour exécuter l'altération.
PCT/US1985/002109 1984-10-26 1985-10-25 Alteration focalisee d'un substrat WO1986002774A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US66525184A 1984-10-26 1984-10-26
US665,251 1984-10-26
US76937085A 1985-08-26 1985-08-26
US769,370 1985-08-26

Publications (1)

Publication Number Publication Date
WO1986002774A1 true WO1986002774A1 (fr) 1986-05-09

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Application Number Title Priority Date Filing Date
PCT/US1985/002109 WO1986002774A1 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat
PCT/US1985/002108 WO1986002581A1 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US1985/002108 WO1986002581A1 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat

Country Status (2)

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EP (2) EP0198908A4 (fr)
WO (2) WO1986002774A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273351A2 (fr) * 1986-12-26 1988-07-06 Seiko Instruments Inc. Appareil pour la réparation d'un film comportant des motifs
EP0316111A2 (fr) * 1987-11-09 1989-05-17 AT&T Corp. Correction de masques
EP0320292A2 (fr) * 1987-12-10 1989-06-14 Fujitsu Limited Procédé de formation d'un motif
DE4029470C1 (en) * 1990-09-17 1991-05-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Local gas atmos. generator for vacuum receptacle - has application jet with ID tapering to outlet tip smaller than 100 microns
EP0483517A2 (fr) * 1990-10-29 1992-05-06 International Business Machines Corporation Dispositif d'amenée le gaz pour le dépot et la gravure par faisceau d'ions
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989004052A1 (fr) * 1987-10-22 1989-05-05 Oxford Instruments Limited Exposition de substrats a des faisceaux ioniques
UA73290C2 (uk) * 1999-08-04 2005-07-15 Дженерал Електрік Компані Електронно-променевий пристрій для нанесення покриття шляхом конденсації з парової фази (варіанти)
DE102006054695B4 (de) * 2006-11-17 2014-05-15 Carl Von Ossietzky Universität Oldenburg Verfahren zur Regelung nanoskaliger elektronenstrahlinduzierter Abscheidungen

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US3056881A (en) * 1961-06-07 1962-10-02 United Aircraft Corp Method of making electrical conductor device
US3686499A (en) * 1969-05-16 1972-08-22 Hitachi Ltd Ion micro-analyzer
US3930155A (en) * 1973-01-19 1975-12-30 Hitachi Ltd Ion microprobe analyser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS586133A (ja) * 1981-07-03 1983-01-13 Mitsubishi Electric Corp 微細パタ−ン形成装置

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US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US4085330A (en) * 1976-07-08 1978-04-18 Burroughs Corporation Focused ion beam mask maker
GB1582231A (en) * 1976-08-13 1981-01-07 Nat Res Dev Application of a layer of carbonaceous material to a surface
JPS5732630A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Repair of defect on photomask
JPS57102019A (en) * 1980-12-17 1982-06-24 Mitsubishi Electric Corp Failure correction of x-ray exposure mask
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
US4466992A (en) * 1982-05-28 1984-08-21 Phillips Petroleum Company Healing pinhole defects in amorphous silicon films
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3056881A (en) * 1961-06-07 1962-10-02 United Aircraft Corp Method of making electrical conductor device
US3686499A (en) * 1969-05-16 1972-08-22 Hitachi Ltd Ion micro-analyzer
US3930155A (en) * 1973-01-19 1975-12-30 Hitachi Ltd Ion microprobe analyser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS586133A (ja) * 1981-07-03 1983-01-13 Mitsubishi Electric Corp 微細パタ−ン形成装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Intenational Conference on Solid State Devices and Materials, published 01 September 1984, KENJI GAMO, NOBUYUKI TAKAKURA, DAISUKE TAKEHARA, and SUSUMU NAMBA, Characteristics of Selective Deposition of Metal Organic Films using Focused Ion Beams. *
Japanese Journal of Applied Physics, Vol. 23, No. 5, published May 1984, KENJI GAMO, NOBUYUKI TAKAKURA, NOROHIKI SAMOTO, RYUICHI SHIMIGU, and SUSUMU NAMBA, Ion Beam Assisted Deposition of Metal Organic Films using Focused Ion Beams, pages L293-L295. *
See also references of EP0198908A4 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273351A2 (fr) * 1986-12-26 1988-07-06 Seiko Instruments Inc. Appareil pour la réparation d'un film comportant des motifs
EP0273351A3 (en) * 1986-12-26 1989-04-12 Seiko Instruments Inc. Apparatus for repairing a pattern film
EP0316111A2 (fr) * 1987-11-09 1989-05-17 AT&T Corp. Correction de masques
EP0316111A3 (en) * 1987-11-09 1989-09-27 American Telephone And Telegraph Company Mask repair
EP0320292A2 (fr) * 1987-12-10 1989-06-14 Fujitsu Limited Procédé de formation d'un motif
EP0320292A3 (en) * 1987-12-10 1990-03-07 Fujitsu Limited A process for forming a pattern
US5004927A (en) * 1987-12-10 1991-04-02 Fujitsu Limited Process for forming a fine pattern having a high aspect ratio
DE4029470C1 (en) * 1990-09-17 1991-05-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Local gas atmos. generator for vacuum receptacle - has application jet with ID tapering to outlet tip smaller than 100 microns
EP0483517A2 (fr) * 1990-10-29 1992-05-06 International Business Machines Corporation Dispositif d'amenée le gaz pour le dépot et la gravure par faisceau d'ions
EP0483517A3 (en) * 1990-10-29 1992-05-27 International Business Machines Corporation Gas delivery for ion beam deposition and etching
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.

Also Published As

Publication number Publication date
EP0198908A1 (fr) 1986-10-29
EP0198907A1 (fr) 1986-10-29
EP0198908A4 (fr) 1987-03-02
WO1986002581A1 (fr) 1986-05-09

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