WO1989004052A1 - Exposition de substrats a des faisceaux ioniques - Google Patents

Exposition de substrats a des faisceaux ioniques Download PDF

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Publication number
WO1989004052A1
WO1989004052A1 PCT/GB1988/000916 GB8800916W WO8904052A1 WO 1989004052 A1 WO1989004052 A1 WO 1989004052A1 GB 8800916 W GB8800916 W GB 8800916W WO 8904052 A1 WO8904052 A1 WO 8904052A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ion beam
ion
mask
ions
Prior art date
Application number
PCT/GB1988/000916
Other languages
English (en)
Inventor
William B. Thompson
Patricia G. Blauner
David Felsenthal
Robert S. Vincent
Henry C. Kaufman
Original Assignee
Oxford Instruments Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instruments Limited filed Critical Oxford Instruments Limited
Publication of WO1989004052A1 publication Critical patent/WO1989004052A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Definitions

  • EXPOSING SUBSTRATES TO ION BEAMS The present invention relates to methods and apparatus for exposing substrates to ion beams.
  • These masks are generally made of chrome or molybdenum suicide o patterns, approximately 1000A thick, on a glass substrate.
  • opaque and clear defects unavoidably occur in the masks.
  • Opaque defects typically consist of excess opaque material outside the desired pattern while clear defects consist of missing opaque material within the desired pattern.
  • repair of opaque defects was typically achieved by a laser system wherein the excess chromium was melted and then evaporated.
  • Focussed ion beams offer an improved means of mask repair because they can achieve beam spot sizes of less than O.l ⁇ and can be accurately positioned using electrostatic deflection. Focussed ion beams can repair masks either by eroding (sputtering) away excess material or, through interaction with an applied gas, by depositing opaque material.
  • the present invention finds particular application to opaque repairs.
  • opaque repairs in addition to sputtering material from surfaces, the bombarding ions also create damage by implanting themselves into the glass mask substrate and by rearranging the surface structure of the substrate.
  • Gallium ions are commonly used for ion beam mask repair and have been observed to damage the mask by leaving a greyish brown stain in the glass substrate which mask inspection machines may detect as a defect and which affects the quality of the images printed with the mask.
  • the stain represents a region of the mask that is less transparent to light than the unbombarded glass itself. Staining thus leads to inspection difficulties and degrades the quality of the mask.
  • the only means of removing such stains involve post-processing of the mask utilising an unwanted, extra step.
  • Ion beams can also be used, for example during mask repair, to image areas of a substrate by detecting secondary particles created by the impacting ions. During this imaging, undesirable substrate damage can occur from the incident ions.
  • ion beams are used for implanting ions of a particular element into the substrate crystal structure, just below the s bstrata surface.
  • P or N type dopants may be added to a surface or subsurface layer of a semiconductor wafer by ion implantation. In most semiconductor applications the dopant concentration and its variation with depth are important parameters to be able to specify and control.
  • a system for exposing a substrate to an ion beam comprises an ion beam source; ion beam control means for controlling the application of the ion beam from the source to the substrate; and supply means for supplying material to the path of the ion beam in the vicinity of a substrate to interact with the ion beam so as to reduce the affect of the ion beam on the substrate.
  • a method for exposing a substrate to an ion beam comprises applying an ion beam to a substrate in response to a control; and introducing material in the path of the ion beam in the vicinity of the substrate to interact with the ion beam to reduce the affect of the ion beam on the substrate.
  • a system according to the invention can introduce a volatile or gaseous material into a vacuum chamber containing the substrate and apply the material directly above the substrate in the path of the incident ion beam.
  • a stainless steel tube is suspended over the mask surface and is fed by a manifold which regulates the flow of a volatile material, such as water, from a reservoir. Valves leading to the manifold are pneumatically operated by computer control to appropriately apply the volatile material.
  • the damaged area is viewed on a CRT by the detection of secondary electrons or ions created by the ion beam striking the mask surface.
  • the operator outlines the area to be repaired on the CRT and the coordinates of that outline are recorded in ' computer memory.
  • the computer then commands the appropriate valves to open, allowing the introduction of water vapour into the work chamber above the substrate.
  • the ion beam under computer control is directed to trace out the area to be repaired causing sputter removal of unwanted opaque material.
  • the computer stops the water flow and a secondary electron or ion image of the repaired area is obtained to assure the operator of a successful repair.
  • the incident ion beam's energy which can have values between 5 and 200 keV, is partially attenuated by adsorbed layers of the volatile material on the surface of the substrate.
  • This attenuation of the ion beam energy has at least three effects.
  • the reduction in energy of the ions which do enter the substrate shortens the implantation depth of the ions.
  • the radiation damage to the substrate is reduced.
  • the energy deposited in the layers of the adsorbed material can decompose the material on the substrate surface producing chemical interaction which reduce the staining of the mask.
  • the volatile material used is water.
  • Water has the advantage of being easily handled while it does not contaminate the vacuum system, ion source, or photomasks.
  • Water in addition to providing a protective layer, decomposes into hydrogen, oxygen, and hydroxide ions.
  • the vapour phase material may also be applied to the area of ion impact during imaging from detection of secondary particles. The application of this material reduces the substrate damage which results from the ion beam's interaction with the substrate during imaging.
  • a vapour phase material may also be added in the ion beam path in ion implantation applications to provide a control over the implantation process.
  • Figure 1 is a diagram of the apparatus; and, Figure 2 is a flow chart representing the steps of mask repair practiced by the apparatus of Figure 1.
  • Figure 1 illustrates apparatus for ion beam imaging and photomask repair.
  • the apparatus includes a focussed ion beam source 28 and associated optics placed above a vacuum, work chamber 20 for the application of an ion beam focussed to submicron dimensions at a substrate 22, such as a photomask, within the chamber 20.
  • the optics of source 28 controls deflection of the ion beam within the chamber 20 to follow a prescribed course over the substrate 22 as is known in the art.
  • the ion beam source 28 and vacuum chamber 20 are differentially pumped, to evacuate them of air, the ion beam passing between them through a small aperture.
  • a stainless steel tube 2 with 1mm inside diameter is suspended in a fixed position with its orifice approximately 0.03 inches (0.076cm) over the surface of the substrate 22.
  • the substrate 22 is normally an opaquely patterned mask to be repaired by opaque material removal at a point of ion beam application.
  • the mask is mounted on an X-Y positioning stage 24 and moves in response to computer activated control 23.
  • the tube 2 is fed from a manifold 4 which, with appropriate valves, controls the flow of a volatile material through tube 2 from a reservoir 10 during the mask repair process.
  • the manifold 4 is used to control the flow rate of the volatile material held in a storage reservoir 10 via valves 16 and 18 under control of a computer 32.
  • a vacuum pump 8 is connected to the manifold 4 by a computer controlled, pneumatically operated valve 12 and a variable leak valve 14. Valve
  • a low energy electron flood beam 26 may be applied to the substrate 22 during ion bombardment to achieve charge neutralisation of insulating substrate materials, as is known in the art.
  • Figure 2 illustrates the process of mask repair.
  • a step 40 the coordinates of the portion of the substrate or mask 22 to be repaired are recorded in a scan control memory of computer 32.
  • the ion beam is scanned over the damaged area of the mask generating secondary electron emission from the point of beam application.
  • An electron detector 30 senses these electrons and controls the intensity of a spot on a CRT screen 31 at a position controlled by computer 32 to correspond to the position of the ion beam. In this manner, the CRT screen 31 is used to view the ion scanned area.
  • An operator outlines the area of the mask 22 to be repaired by sputtering using, for example, a mouse control 25. This process records the X and Y coordinates of that area into the scan control memory of computer 32. The system then stands in a wait state 42 until given a command by an operator to proceed.
  • valves 14, 16 and 18 are opened and valve 12 is closed by the computer 32.
  • the material vapour is introduced into the vacuum chamber 20 through the tube 2.
  • the gas flows from the manifold 4 into the work chamber 20 and over the substrate 22.
  • Leak valve 14 limits the vapour pressure to avoid excess vapour pressure at the tube orifice. This causes the pressure in the work chamber 20 to rise.
  • the pressure in the manifold at typical operating conditions is approximately 2 Torr for the exemplary tube to substrate distance and tube diameter given above.
  • step 46 is entered.
  • the ion beam is deflected over and interacts with the material of the substrate 22 in the operator defined portion of the pattern to be repaired.
  • the ion beam is applied for a preset computer controlled amount of time.
  • the computer software controls the beam deflection, the step size between beam application points, and the beam's dwell time there.
  • the pattern is repeated until each point has been exposed for a preset amount of time as is known in the art.
  • step 48 shuts down the system after computer controlled scan of the repair area by the ion beam is complete.
  • Step 48 turns the ion beam from its beam source 28 off, closes valves 14, 16 and 18, and opens valve 12.
  • a preset value dependent upon the type of electron detector 30
  • an image of the repaired area is obtained in step 50 by secondary electron imaging to assure the operator of the completion of a successful repair.
  • the process of Figure 2 was practiced with water, both tap and pure water, in the reservoir 10.
  • vapour phase material is added to the vacuum chamber 20 to reduce the rate of substrate damage from the applied ion beam.
  • the vapour is applied using the same process as utilised in ion beam repair except that pressures are adjusted to accommodate the requirements of an individual detector 30.
  • a vapour phase material such as water vapour
  • a vapour phase material is applied during ion beam implantation to act as a control mechanism for the depth of ion penetration.
  • the apparatus and process as described above may be used to apply a vapour to the region of ion beam application to control the ion beam penetration.
  • the substrate 22 is a material such as a semiconductor wafer and the ion beam comprises ions to be implanted, as is known in the art.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

La formation de taches ioniques sur un substrat de masque (22) dans un système de réparation de masques de semi-conducteurs par bombardement ionique est commandée par l'introduction dans le trajet du faisceau ionique, au-dessus du substrat, d'un matériau qui agit en interaction avec le faisceau ionique pour éviter la formation de taches inhérentes à l'exposition du substrat de masques à un rayonnement ionisant. Dans un faisceau ionique contenant par exemple des ions de gallium destinés à être utilisés dans la réparation de masques, et en particulier pour l'érosion par pulvérisations ioniques de parties opaques non désirées d'un masque sur un substrat de verre, une couche ou une zone protectrice formée par exemple par de la vapeur d'eau est introduite dans le trajet du faisceau ionique. Le matériau ainsi introduit réagit avec les ions du faisceau ionique pour éviter toute formation sensible de taches ioniques sur le substrat de verre sous-jacent (22). La couche protectrice réduit en général la vitesse d'érosion et les dommages causés par le rayonnement à une surface de substrat bombardée par des faisceaux ioniques énergétiques. En conséquence, la couche protectrice est utile pour réduire au minimum les dommages causés au substrat lors de la formation d'images par faisceaux ioniques et pour commander l'implantation d'ions.
PCT/GB1988/000916 1987-10-22 1988-10-21 Exposition de substrats a des faisceaux ioniques WO1989004052A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11246687A 1987-10-22 1987-10-22
US112,466 1987-10-22

Publications (1)

Publication Number Publication Date
WO1989004052A1 true WO1989004052A1 (fr) 1989-05-05

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Country Status (1)

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WO (1) WO1989004052A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996032741A1 (fr) * 1995-04-13 1996-10-17 North Carolina State University Procede d'usinage par faisceau de particules chargees optimise par vapeur d'eau
WO1997038355A1 (fr) * 1996-04-08 1997-10-16 Micrion Corporation Systemes et dispositifs de depot de films dielectriques
EP0814494A2 (fr) * 1996-06-20 1997-12-29 Seiko Instruments Inc. Procédé et appareil d'usinage par faisceau d'ions
WO2001067501A1 (fr) * 2000-03-10 2001-09-13 Fei Company Appareil et procede permettant de reduire des taux de pulverisation differentiels
WO2001067502A2 (fr) * 2000-03-10 2001-09-13 Fei Company Procede et appareil permettant d'abraser des interconnexions en cuivre dans un systeme a faisceau de particules chargees
US6414307B1 (en) 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
US7140812B2 (en) 2002-05-29 2006-11-28 3M Innovative Properties Company Diamond tool with a multi-tipped diamond
US7510462B2 (en) 2002-09-10 2009-03-31 3M Innovative Properties Company Multi-diamond cutting tool assembly for creating microreplication tools
US9810817B2 (en) 2008-04-02 2017-11-07 3M Innovative Properties Company Light directing film and method for making the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930155A (en) * 1973-01-19 1975-12-30 Hitachi Ltd Ion microprobe analyser
WO1986002581A1 (fr) * 1984-10-26 1986-05-09 Ion Beam Systems, Inc. Alteration focalisee d'un substrat

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930155A (en) * 1973-01-19 1975-12-30 Hitachi Ltd Ion microprobe analyser
WO1986002581A1 (fr) * 1984-10-26 1986-05-09 Ion Beam Systems, Inc. Alteration focalisee d'un substrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Chemical Abstracts, vol. 105, no. 16, October 1986 (Columbus, Ohio, US) H. Betz et al.: "Influence of sputter effects on the resolution in x-ray mask repair", see page 635 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996032741A1 (fr) * 1995-04-13 1996-10-17 North Carolina State University Procede d'usinage par faisceau de particules chargees optimise par vapeur d'eau
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US6140655A (en) * 1995-04-13 2000-10-31 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
WO1997038355A1 (fr) * 1996-04-08 1997-10-16 Micrion Corporation Systemes et dispositifs de depot de films dielectriques
EP0814494A2 (fr) * 1996-06-20 1997-12-29 Seiko Instruments Inc. Procédé et appareil d'usinage par faisceau d'ions
EP0814494A3 (fr) * 1996-06-20 2000-09-20 Seiko Instruments Inc. Procédé et appareil d'usinage par faisceau d'ions
US6414307B1 (en) 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
WO2001067502A2 (fr) * 2000-03-10 2001-09-13 Fei Company Procede et appareil permettant d'abraser des interconnexions en cuivre dans un systeme a faisceau de particules chargees
WO2001067502A3 (fr) * 2000-03-10 2002-02-21 Fei Co Procede et appareil permettant d'abraser des interconnexions en cuivre dans un systeme a faisceau de particules chargees
WO2001067501A1 (fr) * 2000-03-10 2001-09-13 Fei Company Appareil et procede permettant de reduire des taux de pulverisation differentiels
US6641705B2 (en) 2000-03-10 2003-11-04 Fei Company Apparatus and method for reducing differential sputter rates
US7140812B2 (en) 2002-05-29 2006-11-28 3M Innovative Properties Company Diamond tool with a multi-tipped diamond
US7510462B2 (en) 2002-09-10 2009-03-31 3M Innovative Properties Company Multi-diamond cutting tool assembly for creating microreplication tools
US9810817B2 (en) 2008-04-02 2017-11-07 3M Innovative Properties Company Light directing film and method for making the same
US10197713B2 (en) 2008-04-02 2019-02-05 3M Innovative Properties Company Light directing film and method for making the same

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