USD521464S1 - Process tube for semiconductor device manufacturing apparatus - Google Patents

Process tube for semiconductor device manufacturing apparatus Download PDF

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Publication number
USD521464S1
USD521464S1 US29/204,406 US20440604F USD521464S US D521464 S1 USD521464 S1 US D521464S1 US 20440604 F US20440604 F US 20440604F US D521464 S USD521464 S US D521464S
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US
United States
Prior art keywords
semiconductor device
manufacturing apparatus
device manufacturing
process tube
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/204,406
Inventor
Katsutoshi Ishii
Hiroyuki Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHII, KATSUTOSHI, MATSUURA, HIROYUKI
Application granted granted Critical
Publication of USD521464S1 publication Critical patent/USD521464S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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FIG. 1 is an isometric view of a process tube for semiconductor device manufacturing apparatus of the present invention;
FIG. 2 is a front view thereof;
FIG. 3 is a left side view thereof;
FIG. 4 is a right side view thereof;
FIG. 5 is a top view thereof;
FIG. 6 is a bottom view thereof;
FIG. 7 is a sectional view along line 7—7 shown in FIG. 5;
FIG. 8 is a sectional view along line 8—8 shown in FIG. 7;
FIG. 9 is a sectional view along line 9—9 shown in FIG. 5;
FIG. 10 is a sectional view along line 10—10 shown in FIG. 5; and,
FIG. 11 is a sectional view along line 11—11 shown in FIG. 5.
A rear view is not shown as the rear view is a mirror image of the front view shown in FIG. 2.

Claims (1)

    CLAIM
  1. The ornamental design for a process tube for semiconductor device manufacturing apparatus, as shown and described.
US29/204,406 2003-11-04 2004-04-29 Process tube for semiconductor device manufacturing apparatus Expired - Lifetime USD521464S1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-032503 2003-11-04
JP2003032503 2003-11-04

Publications (1)

Publication Number Publication Date
USD521464S1 true USD521464S1 (en) 2006-05-23

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ID=36424296

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/204,406 Expired - Lifetime USD521464S1 (en) 2003-11-04 2004-04-29 Process tube for semiconductor device manufacturing apparatus

Country Status (2)

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US (1) USD521464S1 (en)
TW (1) TWD104755S1 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD590359S1 (en) * 2006-02-20 2009-04-14 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers or the like
USD594488S1 (en) * 2007-04-20 2009-06-16 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD619630S1 (en) * 2007-05-08 2010-07-13 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
USD772824S1 (en) * 2015-02-25 2016-11-29 Hitachi Kokusai Electric Inc. Reaction tube
USD842824S1 (en) * 2017-08-09 2019-03-12 Kokusai Electric Corporation Reaction tube
USD842823S1 (en) * 2017-08-10 2019-03-12 Kokusai Electric Corporation Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037502A (en) * 1983-12-29 1991-08-06 Sharp Kabushiki Kaisha Process for producing a single-crystal substrate of silicon carbide
US5279986A (en) * 1989-02-03 1994-01-18 Applied Materials, Inc. Method for epitaxial deposition
US5352293A (en) * 1992-01-06 1994-10-04 Samsung Electronics Co., Ltd. Tube apparatus for manufacturing semiconductor device
US5752819A (en) * 1993-01-22 1998-05-19 International Business Machines Corporation Exhaust system for high temperature furnace
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
US6240875B1 (en) * 1999-07-07 2001-06-05 Asm International N.V. Vertical oven with a boat for the uniform treatment of wafers
US6402849B2 (en) * 2000-03-17 2002-06-11 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
JP2002280378A (en) 2001-01-11 2002-09-27 Hitachi Kokusai Electric Inc Batch type remote plasma processing equipment

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037502A (en) * 1983-12-29 1991-08-06 Sharp Kabushiki Kaisha Process for producing a single-crystal substrate of silicon carbide
US5279986A (en) * 1989-02-03 1994-01-18 Applied Materials, Inc. Method for epitaxial deposition
US5352293A (en) * 1992-01-06 1994-10-04 Samsung Electronics Co., Ltd. Tube apparatus for manufacturing semiconductor device
US5752819A (en) * 1993-01-22 1998-05-19 International Business Machines Corporation Exhaust system for high temperature furnace
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
US6240875B1 (en) * 1999-07-07 2001-06-05 Asm International N.V. Vertical oven with a boat for the uniform treatment of wafers
US6402849B2 (en) * 2000-03-17 2002-06-11 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
JP2002280378A (en) 2001-01-11 2002-09-27 Hitachi Kokusai Electric Inc Batch type remote plasma processing equipment

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD590359S1 (en) * 2006-02-20 2009-04-14 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers or the like
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD594488S1 (en) * 2007-04-20 2009-06-16 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD619630S1 (en) * 2007-05-08 2010-07-13 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
USD772824S1 (en) * 2015-02-25 2016-11-29 Hitachi Kokusai Electric Inc. Reaction tube
USD842824S1 (en) * 2017-08-09 2019-03-12 Kokusai Electric Corporation Reaction tube
USD842823S1 (en) * 2017-08-10 2019-03-12 Kokusai Electric Corporation Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube

Also Published As

Publication number Publication date
TWD104755S1 (en) 2005-05-21

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