US9356193B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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US9356193B2
US9356193B2 US14/171,191 US201414171191A US9356193B2 US 9356193 B2 US9356193 B2 US 9356193B2 US 201414171191 A US201414171191 A US 201414171191A US 9356193 B2 US9356193 B2 US 9356193B2
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light emitting
layer
conductive
semiconductor layer
electrode
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US20140231833A1 (en
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Hwan Hee Jeong
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Fairlight Innovations LLC
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Definitions

  • the embodiment relates to a light emitting device, a light emitting device package, and a light unit.
  • a light emitting diode has been extensively used as one of light emitting devices.
  • the LED converts electrical signals into the form of light such as infra-red light, visible light and ultra-violet light by using the characteristic of a compound semiconductor.
  • the light emitting device As the light efficiency of the light emitting device is increased, the light emitting device has been used in various fields such as display apparatuses and lighting appliances.
  • FIG. 1 is a view showing a light emitting device according to the embodiment.
  • FIG. 2 is a view showing an arrangement of a first contact portion and a third contact portion of a light emitting device shown in FIG. 1 .
  • FIGS. 3 to 6 are sectional views showing a method of fabricating a light emitting device according to the embodiment.
  • FIG. 7 is a sectional view showing a light emitting device according to another embodiment.
  • FIG. 8 is a sectional view showing a light emitting device package according to the embodiment.
  • FIG. 9 is an exploded perspective view showing a display device according to the embodiment.
  • FIG. 10 is a sectional view showing another example of the display device according to the embodiment.
  • FIG. 11 is an exploded perspective view showing a lighting apparatus according to the embodiment.
  • FIG. 1 is a view showing a light emitting device according to the embodiment and FIG. 2 is a view showing an arrangement of a first contact portion and a third contact portion of a light emitting device shown in FIG. 1 .
  • the light emitting device may include a first light emitting structure 10 , a second light emitting structure 20 , a first electrode 81 , a second electrode 82 , a third electrode 83 , a fourth electrode 84 , a first contact portion 91 , a second contact portion 92 and a third contact portion 93 .
  • the first light emitting structure 10 may include a first conductive first semiconductor layer 11 , a first active layer 12 , and a second conductive second semiconductor layer 13 .
  • the first active layer 12 may be disposed between the first conductive first semiconductor layer 11 and the second conductive second semiconductor layer 13 .
  • the first active layer 12 may be provided under the first conductive first semiconductor layer 11
  • the second conductive second semiconductor layer 13 may be provided under the first active layer 12 .
  • the first conductive first semiconductor layer 11 may include an N-type semiconductor layer doped with N-type dopants serving as first conductive dopants, and the second conductive second semiconductor layer 13 may include a P-type semiconductor layer doped with P-type dopants serving as second conductive dopants.
  • the first conductive first semiconductor layer 11 may include a P-type semiconductor layer, and the second conductive second semiconductor layer 13 may include an N-type semiconductor layer.
  • the first conductive first semiconductor layer 11 may include an N-type semiconductor layer.
  • the first conductive first semiconductor layer 11 may be realized by using a compound semiconductor.
  • the first conductive first semiconductor layer 11 may be realized by using a group II-VI compound semiconductor, or a group III-V compound semiconductor.
  • the first conductive first semiconductor layer 11 may be realized by using a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ y1).
  • the first conductive first semiconductor layer 11 may include one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP doped with N-type dopants such as Si, Ge, Sn, Se, and Te.
  • the first active layer 12 emits light having a wavelength corresponding to the energy band gap difference according to materials constituting the first active layer 13 through the combination of electrons (or holes) injected through the first conductive first semiconductor layer 11 and holes (or electrons) injected through the second conductive second semiconductor layer 13 .
  • the first active layer 12 may have one of a single quantum well (SQW) structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure, but the embodiment is not limited thereto.
  • the first active layer 12 may be realized by using a compound semiconductor.
  • the first active layer 12 may be realized by using a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the first active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers.
  • the first active layer 12 may have a cycle of InGaN well layer/GaN barrier layer.
  • the second conductive second semiconductor layer 13 may include a P-type semiconductor layer.
  • the second conductive second semiconductor layer 13 may be realized by using a compound semiconductor.
  • the second conductive second semiconductor layer 13 may be realized by using a group II-VI compound semiconductor, or a group II-V compound semiconductor.
  • the second conductive second semiconductor layer 13 may be realized by using a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the second conductive second semiconductor layer 13 may include one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP doped with P-type dopants such as Mg, Zn, Ca, Sr, and Ba.
  • the first conductive first semiconductor layer 11 may include a P-type semiconductor layer and the second conductive second semiconductor layer 13 may include the N-type semiconductor layer.
  • a semiconductor layer including an N-type or P-type semiconductor layer may be additionally provided under the second conductive second semiconductor layer 13 .
  • the first light emitting structure 10 may have at least one of an NP junction structure, a PN junction structure, an NPN junction structure, or a PNP junction structure.
  • impurities may be doped into the first conductive first semiconductor layer 11 and the second conductive second semiconductor layer 13 with uniform or non-uniform doping concentration.
  • the first light emitting structure 10 may have various structures, and the embodiment is not limited thereto.
  • a first conductive InGaN/GaN superlattice structure or InGaN/InGaN superlattice structure may be formed between the first conductive first semiconductor layer 11 and the first active layer 12 .
  • a second conductive AlGaN layer may be formed between the second conductive second semiconductor layer 13 and the first active layer 13 .
  • the second light emitting structure 20 may include a first conductive third semiconductor layer 21 , a second active layer 22 , and a second conductive fourth semiconductor layer 23 .
  • the second active layer 22 may be disposed between the first conductive third semiconductor layer 21 and the second conductive fourth semiconductor layer 23 .
  • the second active layer 22 may be provided under the first conductive third semiconductor layer 21
  • the second conductive fourth semiconductor layer 23 may be provided under the second active layer 22 .
  • the first conductive third semiconductor layer 21 may include an N-type semiconductor layer doped with N-type dopants serving as first conductive dopants, and the second conductive fourth layer 23 may include a P-type semiconductor layer doped with P-type dopants serving as second conductive dopants.
  • the first conductive third semiconductor layer 21 may include a P-type semiconductor layer, and the second conductive fourth semiconductor layer 23 may include an N-type semiconductor layer.
  • the structure and material of the second light emitting structure 20 are similar to those of the first light emitting structure 10 , so the detailed description thereof will be omitted.
  • the light emitting device may include a first reflective layer 17 .
  • the first reflective layer may be electrically connected to the second conductive second semiconductor layer 13 .
  • the first reflective layer 17 may be disposed under the first light emitting structure 10 .
  • the first reflective layer 17 may be disposed under the second conductive second semiconductor layer 13 .
  • the first reflective layer 17 may reflect light incident thereto from the first light emitting structure 10 to increase the quantity of light extracted to an outside.
  • the light emitting device may include a first ohmic contact layer 15 disposed between the first reflective layer 17 and the second conductive second semiconductor layer 13 .
  • the first ohmic contact layer 15 may make contact with the second conductive second semiconductor layer 13 .
  • the first ohmic contact layer 15 may make ohmic contact with the first light emitting structure 10 .
  • the first ohmic contact layer 15 may include a region that makes ohmic-contact with the first light emitting structure 10 .
  • the first ohmic contact layer 15 may include a region that makes ohmic-contact with the second conductive second semiconductor layer 13 .
  • the first ohmic contact layer 15 may include a transparent conductive oxide layer.
  • the first ohmic contact layer 15 may include at least one selected from the group consisting of an ITO (Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum Zinc Oxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc Tin Oxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium Gallium Zinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony Tin Oxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.
  • the first reflective layer 17 may include a material having high reflectance.
  • the first reflective layer 17 may include metal including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, and the alloy thereof.
  • the first reflective layer 17 may be formed in a multi-layer of the metal or the alloy thereof and a transmissive conductive material such as an ITO (Indium-Tin-Oxide), an IZO (Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO (Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), an IGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO (Antimony-Tin-Oxide).
  • the first reflective layer 17 may include at least one of Ag, Al, an Ag—Pd—Cu alloy, and an Ag—Cu alloy.
  • the first reflective layer 17 may have a structure in which an Ag layer and a Ni layer are alternately formed, and may include Ni/Ag/Ni or a TI layer, and a Pt layer.
  • the first ohmic contact layer 15 may be provided under the first reflective layer 17 , and at least a portion of the first ohmic contact layer 15 may make ohmic-contact with the first light emitting structure 10 through the first reflective layer 17 .
  • the light emitting device may include a second reflective layer 27 .
  • the second reflective layer 27 may be electrically connected to the second conductive fourth semiconductor layer 23 .
  • the second reflective layer 27 may be disposed under the second light emitting structure 20 .
  • the second reflective layer 27 may be disposed under the second conductive fourth semiconductor layer 23 .
  • the second reflective layer 27 may reflect light incident thereto from the second light emitting structure 20 to increase the quantity of light extracted to an outside.
  • the light emitting device may include a second ohmic contact layer 25 disposed between the second reflective layer 27 and the second conductive fourth semiconductor layer 23 .
  • the second ohmic contact layer 25 may make contact with the second conductive fourth semiconductor layer 23 .
  • the second ohmic contact layer 25 may make ohmic contact with the second light emitting structure 20 .
  • the second ohmic contact layer 25 may include a region that makes ohmic-contact with the second light emitting structure 20 .
  • the second ohmic contact layer 25 may include a region that makes ohmic-contact with the second conductive fourth semiconductor layer 23 .
  • the second ohmic contact layer 25 may include a material and a structure similar to those of the first ohmic contact layer 15 .
  • the second reflective layer 27 may include a material and a structure similar to those of the first reflective layer 17 .
  • the light emitting device may include a first metal layer 35 provided under the first reflective layer 17 .
  • the first metal layer 35 may include at least one of Au, Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the light emitting device may include a second metal layer 45 provided under the second reflective layer 27 .
  • the second metal layer 45 may include at least one of Au, Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the first and second metal layers 35 and 45 may be formed by using the same material or mutually different materials.
  • the second electrode 82 may include at least one of the first reflective layer 17 , the first ohmic contact layer 15 , and the first metal layer 35 .
  • the second electrode 82 may include all of the first reflective layer 17 , the first metal layer 35 , and the first ohmic contact layer 15 , or may include one or two selected from the first reflective layer 17 , the first metal layer 35 , and the first ohmic contact layer 15 .
  • the second electrode 82 may be disposed under the first light emitting structure 10 .
  • the second electrode 82 may be electrically connected to the second conductive second semiconductor layer 13 .
  • the fourth electrode 84 may include at least one of the second reflective layer 27 , the second ohmic contact layer 25 , and the second metal layer 45 .
  • the fourth electrode 84 may include all of the second reflective layer 27 , the second metal layer 45 , and the second ohmic contact layer 25 , or may include one or two selected from the second reflective layer 27 , the second metal layer 45 , and the second ohmic contact layer 25 .
  • the fourth electrode 84 may be disposed under the second light emitting structure 20 .
  • the fourth electrode 84 may be electrically connected to the second conductive fourth semiconductor layer 23 .
  • the light emitting device may include a channel layer 30 provided around a lower portion of the first light emitting structure 10 .
  • the channel layer 30 may be provided around a lower portion of the second light emitting structure 20 .
  • a first region of the channel layer 30 may be disposed under the second conductive second semiconductor layer 13 .
  • a first region of the channel layer 30 may come into contact with a bottom surface of the second conductive second semiconductor layer 13 .
  • a second region of the channel layer 30 may be disposed under the second conductive fourth semiconductor layer 23 .
  • the second region of the channel layer 30 may come into contact with a bottom surface of the second conductive fourth semiconductor layer 23 .
  • the first region of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and the first reflective layer 17 .
  • the second region of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and the second reflective layer 27 .
  • the first region of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and the first ohmic contact layer 15 .
  • the second region of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and the second ohmic contact layer 25 .
  • the channel layer 30 may be exposed at a lower peripheral portion of the first light emitting structure 10 .
  • the channel layer 30 may extend outward from the sidewall of the first light emitting structure 10 .
  • a side of the channel layer 30 may come into contact with a side of the second electrode 82 .
  • the side of the channel layer 30 may come into contact with a side of the first ohmic contact layer 15 .
  • Some region of the channel layer 30 may be disposed on a top surface of the second electrode 82 .
  • Some region of the channel layer 30 may come into contact with a top surface of the first metal layer 35 .
  • the channel layer 30 may be exposed at a lower peripheral portion of the second light emitting structure 20 .
  • the channel layer 30 may extend outward from the sidewall of the second light emitting structure 20 .
  • a side of the channel layer 30 may come into contact with a side of the fourth electrode 84 .
  • the side of the channel layer 30 may come into contact with a side of the second ohmic contact layer 25 .
  • Some region of the channel layer 30 may be disposed on a top surface of the fourth electrode 84 .
  • Some region of the channel layer 30 may come into contact with a top surface of the second metal layer 45 .
  • a third region of the channel layer 30 may be disposed between the first and second light emitting structures 10 and 20 .
  • the third region of the channel layer 30 may be exposed between the first and second light emitting structures 10 and 20 .
  • the channel layer 30 may be referred to as an isolation layer.
  • the channel layer 30 may serve as an etching stopper when an isolation process is performed with respect to the first and second light emitting structures 10 and 20 later.
  • the channel layer 30 may prevent the electrical characteristic of the light emitting device from being degraded caused by the isolation process.
  • the channel layer 30 may include an insulating material.
  • the channel layer 30 may be realized by using oxide or nitride.
  • the channel layer 30 may include at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the light emitting device may include the first conduct portion 91 .
  • the first conduct portion 91 may be provided through the first light emitting structure 10 .
  • the first conduct portion 91 may be provided through the first conductive first semiconductor layer 11 , the first active layer 12 and the second conductive second semiconductor layer 13 .
  • a plurality of first contact portions 91 may be formed in the first light emitting structure 10 according to the embodiment.
  • the first contact portions 91 may be disposed along first through holes 55 of the first light emitting structure 10 .
  • a first region of the first contact portion 91 may be electrically connected to the first electrode 81 and a second region of the first contact portion 91 may make contact with a top surface of the first conductive first semiconductor layer 11 .
  • the first region of the first contact portion 91 may make contact with the third metal layer 50 .
  • the first region of the first contact portion 91 may make contact with the top surface of the third metal layer 50 .
  • the first contact portion 91 may make contact with an n face of the first conductive first semiconductor layer 11 .
  • the first light emitting structure 10 may be formed with a plurality of first through holes 55 as shown in FIG. 2 and the first contact portion 91 may be formed in each first through hole 55 .
  • the first contact portions 91 may be spaced apart from each other on the top surface of the first conductive first semiconductor layer 11 . Since the first contact portions 91 are distributed on the first light emitting structure 10 , current applied to the first conductive first semiconductor layer 11 may be spread. Thus, the degradation of the first conductive first semiconductor layer 11 can be prevented and the combination efficiency of the electrons and holes in the first active layer 12 can be improved.
  • the first contact portion 91 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the first contact portion 91 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the third conduct portion 93 .
  • the third conduct portion 93 may be provided through the second light emitting structure 20 .
  • the third conduct portion 93 may be provided through the first conductive third semiconductor layer 21 , the second active layer 22 and the second conductive fourth semiconductor layer 23 .
  • a plurality of third contact portions 93 may be formed in the second light emitting structure 20 according to the embodiment.
  • the third contact portions 91 may be disposed along second through holes 65 of the second light emitting structure 20 .
  • a first region of the third contact portion 93 may be electrically connected to the third electrode 83 and a second region of the third contact portion 93 may make contact with a top surface of the first conductive third semiconductor layer 21 .
  • the first region of the third contact portion 93 may make contact with the third electrode 83 .
  • the first region of the third contact portion 93 may make contact with the top surface of the third electrode 83 .
  • the third contact portion 93 may make contact with an n face of the first conductive third semiconductor layer 21 .
  • the second light emitting structure 20 may be formed with a plurality of second through holes 65 as shown in FIG. 2 and the third contact portion 93 may be formed in each second through hole 65 .
  • the third contact portions 93 may be spaced apart from each other on the top surface of the first conductive third semiconductor layer 21 . Since the third contact portions 93 are distributed on the second light emitting structure 20 , current applied to the first conductive third semiconductor layer 21 may be spread. Thus, the degradation of the first conductive third semiconductor layer 21 can be prevented and the combination efficiency of the electrons and holes in the second active layer 22 can be improved.
  • the third contact portion 93 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the third contact portion 93 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the second conduct portion 92 .
  • the second conduct portion 92 may be electrically connected to the second and third electrodes 82 and 83 .
  • the second contact portion 92 may be disposed between the first and second light emitting structures 10 and 20 .
  • the second contact portion 92 may be exposed between the first and second light emitting structures 10 and 20 .
  • One end of the second contact portion 92 may come into contact with the top surface of the second electrode 82 and the other end of the second contact portion 92 may come into contact with the top surface of the third electrode 83 .
  • the second contact portion 92 may be exposed on the third region of the channel layer 30 .
  • the second contact portion 92 may be spaced apart from the side of the first light emitting structure 10 .
  • the second contact portion 92 may be spaced apart from the side of the second light emitting structure 20 .
  • the second contact portion 92 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the second contact portion 92 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • a plurality of the second contact portions 92 and the fourth contact portions 94 may be provided.
  • the light emitting device may include a third insulating layer 33 .
  • the third insulating layer 33 may be formed of oxide or nitride.
  • the third insulating layer 33 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the third insulating layer 33 may be disposed in the first light emitting structure 10 .
  • the third insulating layer 33 may be disposed around the first contact portion 91 .
  • the third insulating layer 33 may surround the lateral side of the first contact portion 91 .
  • the third insulating layer 33 may be provided through the first conductive first semiconductor layer 11 , the first active layer 12 and the second conductive second semiconductor layer 13 . A portion of the third insulating layer 33 may extend downward from the second conductive second semiconductor layer 13 .
  • a first insulating layer 31 may be disposed around the first contact portion 91 .
  • the first insulating layer 31 may be disposed around the lateral side of the first contact portion 91 .
  • the first insulating layer 31 may be disposed around the third insulating layer 33 .
  • the first insulating layer 31 may surround the third insulating layer 33 .
  • the first insulating layer 31 may be disposed under the first light emitting structure 10 .
  • the first insulating layer 31 may be disposed under the second conductive second semiconductor layer 13 .
  • the first insulating layer 31 may come into contact with a bottom surface of the second conductive second semiconductor layer 13 .
  • the first insulating layer 31 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the first and third insulating layers 31 and 33 may be formed of same material or mutually different materials.
  • the light emitting device may include a fourth insulating layer 43 .
  • the fourth insulating layer 43 may be formed of oxide or nitride.
  • the fourth insulating layer 43 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the fourth insulating layer 43 may be disposed in the second light emitting structure 20 .
  • the fourth insulating layer 43 may be disposed around the third contact portion 93 .
  • the fourth insulating layer 43 may surround the lateral side of the third contact portion 93 .
  • the fourth insulating layer 43 may be provided through the first conductive third semiconductor layer 21 , the second active layer 22 and the second conductive fourth semiconductor layer 23 . A portion of the fourth insulating layer 43 may extend downward from the second conductive fourth semiconductor layer 23 .
  • a second insulating layer 41 may be disposed around the third contact portion 93 .
  • the second insulating layer 41 may be disposed around the lateral side of the third contact portion 93 .
  • the second insulating layer 41 may be disposed around the fourth insulating layer 43 .
  • the second insulating layer 41 may surround the fourth insulating layer 43 .
  • the second insulating layer 41 may be disposed under the second light emitting structure 20 .
  • the second insulating layer 41 may be disposed under the second conductive fourth semiconductor layer 23 .
  • the second insulating layer 41 may come into contact with a bottom surface of the second conductive fourth semiconductor layer 23 .
  • the second insulating layer 41 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the second and fourth insulating layers 41 and 43 may be formed of same material or mutually different materials.
  • a fifth insulating layer 40 may be disposed between the first metal layer 35 and the first contact portion 91 .
  • the fifth insulating layer 40 may be formed of oxide or nitride.
  • the fifth insulating layer 40 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the fifth insulating layer 40 may be disposed under the first metal layer 35 .
  • the fifth insulating layer 40 may be disposed under the third insulating layer 33 .
  • the fifth insulating layer 40 may be disposed under the channel layer 30 .
  • the fifth insulating layer 40 may be disposed under the first insulating layer 31 .
  • the fifth insulating layer 40 may be disposed between the second metal layer 45 and the third contact portion 93 .
  • the fifth insulating layer 40 may be disposed under the second metal layer 45 .
  • the fifth insulating layer 40 may be disposed under the fourth insulating layer 43 .
  • the fifth insulating layer 40 may be disposed under the second insulating layer 41 .
  • the fifth insulating layer 40 may be disposed around the first contact portion 91 .
  • the fifth insulating layer 40 may be disposed around the second contact portion 92 .
  • the fifth insulating layer 40 may be disposed around the third contact portion 93 .
  • the fifth insulating layer 40 may be disposed between the first metal layer 35 and the second metal layer 45 .
  • the third metal layer 50 may be disposed under the first contact portion 91 .
  • the third metal layer 50 may be electrically connected to the first contact portion 91 .
  • a top surface of the third metal layer 50 may come into contact with a bottom surface of the first contact portion 91 .
  • the third metal layer 50 may be disposed under the fifth insulating layer 40 .
  • the third metal layer 50 may include at least one of Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the third metal layer 50 may serve as a diffusion barrier layer.
  • a bonding layer 60 and a conductive support member 70 may be provided under the third metal layer 50 .
  • the third metal layer 50 may prevent a material included in the bonding layer 60 from being diffused to the first and second reflective layers 17 and 27 in the process of providing the bonding layer 60 .
  • the third metal layer 50 may prevent a material, such as Sn, included in the bonding layer 60 from exerting an influence on the first and second reflective layers 17 and 27 .
  • the bonding layer 60 includes barrier metal or bonding metal.
  • the bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta.
  • the conductive support member 70 may support the first and second light emitting structures 10 and 20 according to the embodiment while performing a heat radiation function.
  • the bonding layer 60 may be realized in the form of a seed layer.
  • the conductive support member 70 may include at least one of semiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu—W, or impurities.
  • semiconductor substrates e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates
  • the first electrode 81 may include at least one of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the first electrode 81 may include all of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the first electrode 81 may selectively include one or two of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the first electrode 81 may be disposed under the first light emitting structure 10 .
  • the first electrode 81 may be electrically connected to the first conductive first semiconductor layer 11 .
  • a bottom surface of the first electrode 81 may be disposed lower than a bottom surface of the second electrode 82 .
  • a top surface of the first electrode 81 may be disposed lower than the bottom surface of the second electrode 82 .
  • a bottom surface of the first contact portion 91 may be disposed lower than the bottom surface of the second electrode 82 .
  • the bottom surface of the first contact portion 91 may be arranged on the same plane with the top surface of the first electrode 81 .
  • the third electrode 83 may be disposed under the third contact portion 93 .
  • the third electrode 83 may be disposed under the fifth insulating layer 40 .
  • the third electrode 83 may be disposed between the fifth insulating layer 40 and the third metal layer 50 .
  • the third electrode 83 may be connected to the second contact portion 92 .
  • the third electrode 83 may be disposed under the second light emitting structure 20 .
  • the third electrode 83 may be electrically connected to the first conductive third semiconductor layer 21 .
  • the third electrode 83 may be electrically connected to the first conductive third semiconductor layer 21 through the third contact portion 93 .
  • a top surface of the first electrode 81 may be arranged on the same plane with a top surface of the third electrode 83 .
  • the third electrode 83 may include at least one of Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the light emitting device may include a sixth insulating layer 48 disposed between the third electrode 83 and the first electrode 81 .
  • the sixth insulating layer 48 may be formed of oxide or nitride.
  • the light emitting device may include a fourth contact portion 94 .
  • the fourth contact portion 94 may be spaced apart from the second light emitting structure 20 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 through the channel layer 30 .
  • the fourth contact portion 94 may be electrically connected to the second electrode 82 .
  • the fourth contact portion 94 may come into contact with a top surface of the second electrode 82 .
  • the fourth contact portion 94 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.
  • the fourth contact portion 94 and the third contact portion 93 may be formed of same material or mutually different materials.
  • the roughness may be formed on the top surface of the first conductive first semiconductor layer 11 .
  • the roughness may be formed on the top surface of the first conductive third semiconductor layer 21 .
  • the quantity of light extracted upward may be increased in the region where the roughness is formed.
  • power may be applied to the first and second light emitting structures 10 and 20 through the first electrode 81 and the fourth electrode 84 .
  • the power may be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 of the first electrode 81 and the fourth contact portion 94 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 . Therefore, the fourth contact portion 94 is connected to a power pad through a wire bonding scheme, thereby supplying power to the second conductive fourth semiconductor layer 23 .
  • the power can be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the fourth contact portion 94 .
  • current concentration can be prevented, and the electrical reliability can be improved.
  • a high-voltage light emitting device can be implemented.
  • the embodiment illustrates the first and second light emitting structures 10 and 20
  • the number of the light emitting structures may not be limited thereto.
  • three or more of the light emitting structures may be provided.
  • the light emitting structures may be electrically connected to each other in series or in a row.
  • the first through holes 55 are formed from the top surface of the first light emitting structure 10 .
  • the second through holes 65 are formed from the top surface of the second light emitting structure 20 .
  • an area of the electrode disposed on the top surface of the first and second light emitting structures 10 and 20 can be reduced so that a protective layer may be omitted from the top surface or lateral side of the first and second light emitting structures 10 and 20 . Therefore, the extraction efficiency of light emitted to the outside from the first and second light emitting structures 10 and 20 can be improved.
  • the first conductive semiconductor layer 11 a , the active layer 12 a , and the second conductive semiconductor layer 13 a may be formed on a substrate 5 .
  • the first conductive semiconductor layer 11 a , the active layer 12 a , and the second conductive semiconductor layer 13 a may be defined as the light emitting structure 10 a.
  • the substrate 5 may include at least one of a sapphire substrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but the embodiment is not limited thereto.
  • a buffer layer may be disposed between the first conductive semiconductor layer 11 a and the substrate 5 .
  • the first conductive semiconductor layer 11 a may include an N-type semiconductor layer doped with N-type dopants serving as first conductive dopants, and the second conductive semiconductor layer 13 a may include a P-type semiconductor layer doped with P-type dopants serving as second conductive dopants.
  • the first conductive semiconductor layer 11 a may include a P-type semiconductor layer, and the second conductive semiconductor layer 13 a may include an N-type semiconductor layer.
  • the first conductive semiconductor layer 11 a may include an N-type semiconductor.
  • the first conductive semiconductor layer 11 a may include a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the first conductive semiconductor layer 11 a may include one selected from the group consisting of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN, and may be doped with N-type dopants such as Si, Ge, Sn, Se, and Te.
  • the active layer 12 a emits light having a wavelength corresponding to the energy band gap difference according to materials constituting the active layer 12 a through the combination of electrons (or holes) injected through the first conductive semiconductor layer 11 a and holes (or electrons) injected through the second conductive semiconductor layer 13 a .
  • the active layer 12 a may have one of a single quantum well (SQW) structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure, but the embodiment is not limited thereto.
  • the active layer 12 a may be realized by using a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the active layer 12 a may be formed by stacking a plurality of well layers and a plurality of barrier layers.
  • the active layer 12 a may have a cycle of InGaN well layer/GaN barrier layer.
  • the second conductive semiconductor layer 13 a may be realized by using a P type semiconductor.
  • the second conductive semiconductor layer 13 a may be realized by using a semiconductor material having a compositional formula of InxAlyGal-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the second conductive semiconductor layer 13 a may include one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, and InN, and may be doped with P-type dopants such as Mg, Zn, Ca, Sr, and Ba.
  • the first conductive semiconductor layer 11 a may include a P-type semiconductor layer and the second conductive semiconductor layer 13 a may include the N-type semiconductor layer.
  • a semiconductor layer including an N-type or P-type semiconductor layer may be additionally provided on the second conductive semiconductor layer 13 a .
  • the light emitting structure 10 a may have at least one of an NP junction structure, a PN junction structure, an NPN junction structure, or a PNP junction structure.
  • impurities may be doped into the first conductive semiconductor layer 11 a and the second conductive semiconductor layer 13 a with uniform or non-uniform doping concentration.
  • the light emitting structure 10 a may have various structures, and the embodiment is not limited thereto.
  • first conductive InGaN/GaN superlattice structure or InGaN/InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 a and the active layer 12 a .
  • a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 a and the active layer 12 a.
  • the channel layer 30 , the first insulating layer 31 and the second insulating layer 41 may be formed on the light emitting structure 10 a .
  • the channel layer 30 , the first insulating layer 31 and the second insulating layer 41 may be formed by using the same material or mutually different materials.
  • the channel layer 30 , the first insulating layer 31 and the second insulating layer 41 may be formed of oxide or nitride.
  • the channel layer 30 , the first insulating layer 31 and the second insulating layer 41 may be formed by using at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, and TiO2.
  • the light emitting structure 10 a may be provided therein with the first ohmic contact layer 15 , the second ohmic contact layer 25 , the first reflective layer 17 and the second reflective layer 27 .
  • the first ohmic contact layer 15 may be disposed between the first reflective layer 17 and the second conductive semiconductor layer 13 a .
  • the first ohmic contact layer 15 may make contact with the second conductive semiconductor layer 13 a .
  • the second ohmic contact layer 25 may be disposed between the second reflective layer 27 and the second conductive semiconductor layer 13 a .
  • the second ohmic contact layer 25 may make contact with the second conductive semiconductor layer 13 a.
  • the first ohmic contact layer 15 may make ohmic-contact with the light emitting structure 10 a .
  • the first reflective layer 17 may be electrically connected to the second conductive semiconductor layer 13 a .
  • the first ohmic contact layer 15 may include an ohmic-contact region that makes ohmic-contact with the light emitting structure 10 a .
  • the second ohmic contact layer 25 may make ohmic-contact with the light emitting structure 10 a .
  • the second reflective layer 27 may be electrically connected to the second conductive semiconductor layer 13 a .
  • the second ohmic contact layer 25 may include an ohmic-contact region that makes ohmic-contact with the light emitting structure 10 a.
  • the first and second ohmic contact layers 15 and 25 may include a transparent conductive oxide layer.
  • the first and second ohmic contact layers 15 and 25 may include at least one selected from the group consisting of an ITO (Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum Zinc Oxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc Tin Oxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium Gallium Zinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony Tin Oxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.
  • the first and second reflective layers 17 and 27 may include a material having high reflectance.
  • the first and second reflective layers 17 and 27 may include metal including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, and the alloy thereof.
  • the first and second reflective layers 17 and 27 may be formed in a multi-layer structure by using the metal or the alloy thereof and a transmissive conductive material such as an ITO (Indium-Tin-Oxide), an IZO (Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO (Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), an IGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO (Antimony-Tin-Oxide).
  • the first and second reflective layers 17 and 27 may include at least one of Ag, Al, an Ag—Pd—Cu alloy, and an Ag—Cu alloy.
  • the first and second reflective layers 17 and 27 may have a structure in which an Ag layer and a Ni layer are alternately formed, and may include Ni/Ag/Ni or a TI layer, and a Pt layer.
  • the first ohmic contact layer 15 may be provided on the first reflective layer 17 , and at least a portion of the first ohmic contact layer 15 may make ohmic-contact with the light emitting structure 10 a through the first reflective layer 17 .
  • the second ohmic contact layer 25 may be provided on the second reflective layer 27 , and at least a portion of the second ohmic contact layer 25 may make ohmic-contact with the light emitting structure 10 a through the second reflective layer 27 .
  • the first metal layer 35 is formed on the first reflective layer 17 and the second metal layer 45 is formed on the second reflective layer 27 .
  • the fifth insulating layer 40 , the third electrode 83 , the sixth insulating layer 48 , the third metal layer 50 , the bonding layer 60 and the conductive support member 70 are formed on the first and second metal layers 35 and 45 .
  • the first and second metal layers 35 and 45 may include at least one selected from the group consisting of Au, Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the second electrode 82 may include at least one of the first reflective layer 17 , the first ohmic contact layer 15 , and the first metal layer 35 .
  • the second electrode 82 may include all of the first reflective layer 17 , the first ohmic contact layer 15 , and the first metal layer 35 or may selectively include one or two of the first reflective layer 17 , the first ohmic contact layer 15 , and the first metal layer 35 .
  • the fourth electrode 84 may include at least one of the second reflective layer 27 , the second ohmic contact layer 25 , and the second metal layer 45 .
  • the fourth electrode 84 may include all of the second reflective layer 27 , the second ohmic contact layer 25 , and the second metal layer 45 or may selectively include one or two of the second reflective layer 27 , the second ohmic contact layer 25 , and the second metal layer 45 .
  • the fifth insulating layer 40 may be formed of oxide or nitride.
  • the fifth insulating layer 40 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the third electrode 83 may be formed on the fifth insulating layer 40 .
  • the third electrode 83 may include at least one of Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the third electrode 83 may serve as a diffusion barrier layer.
  • the sixth insulating layer 48 may be formed on the third electrode 83 .
  • the sixth insulating layer 48 may include at least one selected from the group consisting of Si02, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.
  • the third metal layer 50 may be disposed on the sixth insulating layer 48 .
  • the third metal layer 50 may include at least one of Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.
  • the third metal layer 50 may serve as a diffusion barrier layer.
  • the bonding layer 60 and the conductive support member 70 may be provided on the third metal layer 50 .
  • the third metal layer 50 may prevent a material included in the bonding layer 60 from being diffused to the first and second reflective layers 17 and 27 in the process of providing the bonding layer 60 .
  • the third metal layer 50 may prevent a material, such as Sn, included in the bonding layer 60 from exerting an influence on the first and second reflective layers 17 and 27 .
  • the bonding layer 60 includes barrier metal or bonding metal.
  • the bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta.
  • the conductive support member 70 may support the light emitting structure 10 a according to the embodiment while performing a heat radiation function.
  • the bonding layer 60 may be realized in the form of a seed layer.
  • the conductive support member 70 may include at least one of semiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu—W, or impurities.
  • semiconductor substrates e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates
  • the first electrode 81 may include at least one of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the first electrode 81 may include all of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the first electrode 81 may selectively include one or two of the third metal layer 50 , the bonding layer 60 and the conductive support member 70 .
  • the substrate 5 is removed from the first conductive semiconductor layer 11 .
  • the substrate 5 may be removed through a laser lift off (LLO) process.
  • the LLO process is a process to delaminate the substrate 5 from the first conductive semiconductor layer 11 a by irradiating a laser to the bottom surface of the substrate 5 .
  • the lateral side of the light emitting structure 10 a is etched through an isolation etching process to expose a portion of the channel layer 30 .
  • the isolation etching process may be performed through a dry etching process such as an inductively coupled plasma (ICP), but the embodiment is not limited thereto.
  • ICP inductively coupled plasma
  • the first and second light emitting structures 10 and 20 may be provided through the isolation etching process.
  • the first light emitting structure 10 may include the first conductive first semiconductor layer 11 , the first active layer 12 and the second conductive second semiconductor layer 13 .
  • the second light emitting structure 20 may include the first conductive third semiconductor layer 21 , the second active layer 22 and the second conductive fourth semiconductor layer 23 .
  • the roughness may be formed on the top surface of the first and second light emitting structures 10 and 20 . Accordingly, a light extraction pattern may be provided on the top surface of the first and second light emitting structures 10 and 20 .
  • a concave-convex pattern may be provided on the top surface of the first and second light emitting structures 10 and 20 .
  • the light extraction pattern provided on the first and second light emitting structures 10 and 20 may be provided through a PEC (photo electro chemical) etching process. Therefore, according to the embodiment, the external light extraction effect can be increased.
  • the third insulating layer 33 , the fourth insulating layer 43 , the first contact portion 91 , the second contact portion 92 , the third contact portion 93 and the fourth contact portion 94 may be formed.
  • the third insulating layer 33 may be provided through the first light emitting structure 10 .
  • the third insulating layer 33 may come into contact with the fifth insulating layer 40 by passing through the first light emitting structure 10 .
  • the third insulating layer 33 may come into contact with a lateral side of the first insulating layer 31 by passing through the first light emitting structure 10 .
  • the third insulating layer 33 may be formed of oxide or nitride.
  • the fourth insulating layer 43 may be provided through the second light emitting structure 20 .
  • the fourth insulating layer 43 may come into contact with the fifth insulating layer 40 by passing through the second light emitting structure 20 .
  • the fourth insulating layer 43 may come into contact with a lateral side of the second insulating layer 41 by passing through the second light emitting structure 20 .
  • the fourth insulating layer 43 may be formed of oxide or nitride.
  • the light emitting device may include the first conduct portion 91 .
  • the first conduct portion 91 may be provided through the first light emitting structure 10 .
  • the first conduct portion 91 may be provided through the first conductive first semiconductor layer 11 , the first active layer 12 and the second conductive second semiconductor layer 13 .
  • a plurality of first contact portions 91 may be formed in the first light emitting structure 10 according to the embodiment.
  • the first contact portions 91 may be disposed along first through holes 55 of the first light emitting structure 10 .
  • a first region of the first contact portion 91 may be electrically connected to the first electrode 81 and a second region of the first contact portion 91 may make contact with a top surface of the first conductive first semiconductor layer 11 .
  • the first region of the first contact portion 91 may make contact with the third metal layer 50 .
  • the first region of the first contact portion 91 may make contact with the top surface of the third metal layer 50 .
  • the first contact portion 91 may make contact with an n face of the first conductive first semiconductor layer 11 .
  • the first light emitting structure 10 may be formed with a plurality of first through holes 55 as shown in FIG. 2 and the first contact portion 91 may be formed in each first through hole 55 .
  • the first contact portions 91 may be spaced apart from each other on the top surface of the first conductive first semiconductor layer 11 . Since the first contact portions 91 are distributed on the first light emitting structure 10 , current applied to the first conductive first semiconductor layer 11 may be spread. Thus, the degradation of the first conductive first semiconductor layer 11 can be prevented and the combination efficiency of the electrons and holes in the first active layer 12 can be improved.
  • the first contact portion 91 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the first contact portion 91 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the third conduct portion 93 .
  • the third conduct portion 93 may be provided through the second light emitting structure 20 .
  • the third conduct portion 93 may be provided through the first conductive third semiconductor layer 21 , the second active layer 22 and the second conductive fourth semiconductor layer 23 .
  • a plurality of third contact portions 93 may be formed in the second light emitting structure 20 according to the embodiment.
  • the third contact portions 91 may be disposed along second through holes 65 of the second light emitting structure 20 .
  • a first region of the third contact portion 93 may be electrically connected to the third electrode 83 and a second region of the third contact portion 93 may make contact with a top surface of the first conductive third semiconductor layer 21 .
  • the first region of the third contact portion 93 may make contact with the third electrode 83 .
  • the first region of the third contact portion 93 may make contact with the top surface of the third electrode 83 .
  • the third contact portion 93 may make contact with an n face of the first conductive third semiconductor layer 21 .
  • the second light emitting structure 20 may be formed with a plurality of second through holes 65 as shown in FIG. 2 and the third contact portion 93 may be formed in each second through hole 65 .
  • the third contact portions 93 may be spaced apart from each other on the top surface of the first conductive third semiconductor layer 21 . Since the third contact portions 93 are distributed on the second light emitting structure 20 , current applied to the first conductive third semiconductor layer 21 may be spread. Thus, the degradation of the first conductive third semiconductor layer 21 can be prevented and the combination efficiency of the electrons and holes in the second active layer 22 can be improved.
  • the third contact portion 93 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the third contact portion 93 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the second conduct portion 92 .
  • the second conduct portion 92 may be electrically connected to the second and third electrodes 82 and 83 .
  • the second contact portion 92 may be disposed between the first and second light emitting structures 10 and 20 .
  • the second contact portion 92 may be exposed between the first and second light emitting structures 10 and 20 .
  • One end of the second contact portion 92 may come into contact with the top surface of the second electrode 82 and the other end of the second contact portion 92 may come into contact with the top surface of the third electrode 83 .
  • the second contact portion 92 may be exposed on the channel layer 30 .
  • the second contact portion 92 may be spaced apart from the side of the first light emitting structure 10 .
  • the second contact portion 92 may be spaced apart from the side of the second light emitting structure 20 .
  • the second contact portion 92 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the second contact portion 92 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include a fourth contact portion 94 .
  • the fourth contact portion 94 may be spaced apart from the second light emitting structure 20 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 through the channel layer 30 .
  • the fourth contact portion 94 may be electrically connected to the second electrode 82 .
  • the fourth contact portion 94 may come into contact with a top surface of the second electrode 82 .
  • the fourth contact portion 94 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.
  • the fourth contact portion 94 and the third contact portion 93 may be formed of same material or mutually different materials.
  • a plurality of second contact portions 92 and fourth contact portions 94 may be provided.
  • the manufacturing process described above is illustrative purpose only and may be variously modified.
  • power may be applied to the first and second light emitting structures 10 and 20 through the first electrode 81 and the fourth electrode 84 .
  • the power may be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 of the first electrode 81 and the fourth contact portion 94 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 . Therefore, the fourth contact portion 94 is connected to a power pad through a wire bonding scheme, thereby supplying power to the second conductive fourth semiconductor layer 23 .
  • the power can be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the fourth contact portion 94 .
  • current concentration can be prevented, and the electrical reliability can be improved.
  • a high-voltage light emitting device can be implemented.
  • the embodiment illustrates the first and second light emitting structures 10 and 20
  • the number of the light emitting structures may not be limited thereto.
  • three or more of the light emitting structures may be provided.
  • the light emitting structures may be electrically connected to each other in series or in a row.
  • the first through holes 55 are formed from the top surface of the first light emitting structure 10 .
  • the second through holes 65 are formed from the top surface of the second light emitting structure 20 .
  • an area of the electrode disposed on the top surface of the first and second light emitting structures 10 and 20 can be reduced so that a protective layer may be omitted from the top surface or lateral side of the first and second light emitting structures 10 and 20 . Therefore, the extraction efficiency of light emitted to the outside from the first and second light emitting structures 10 and 20 can be improved.
  • FIG. 7 is a sectional view showing another example of a light emitting device according to the embodiment.
  • components and structures the same as those described with reference to FIGS. 1 and 2 will not be further described in order to avoid redundancy.
  • a first ohmic reflective layer 19 may be provided under the first light emitting structure 10 .
  • the first ohmic reflective layer 19 may be realized such that the first ohmic reflective layer 19 may serve as both of the first reflective layer 17 and the first ohmic contact layer 15 . Accordingly, the first ohmic reflective layer 19 may make ohmic-contact with the second conductive second semiconductor layer 13 , and reflect the light incident thereto from the first light emitting structure 10 .
  • the first ohmic reflective layer 19 may include multiple layers.
  • the first ohmic reflective layer 19 may have a structure in which an Ag layer and a Ni layer are alternately formed, or may include a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.
  • the conductive support member 70 provided under the first ohmic reflective layer 19 may be electrically connected to the first conductive first semiconductor layer 11 provided on the first ohmic reflective layer 19 .
  • the second electrode 82 may include at least one of the first ohmic reflective layer 19 and the first metal layer 35 .
  • the conductive support member 70 provided under the second electrode 82 may be electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 82 through the first contact portion 91 .
  • a second ohmic reflective layer 29 may be provided under the second light emitting structure 20 .
  • the second ohmic reflective layer 29 may be realized such that the second ohmic reflective layer 29 may serve as both of the second reflective layer 27 and the second ohmic contact layer 25 . Accordingly, the second ohmic reflective layer 29 may make ohmic-contact with the second conductive fourth semiconductor layer 23 , and reflect the light incident thereto from the second light emitting structure 20 .
  • the second ohmic reflective layer 29 may include multiple layers.
  • the second ohmic reflective layer 29 may have a structure in which an Ag layer and a Ni layer are alternately formed, or may include a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.
  • the fourth electrode 84 may include at least one of the second ohmic reflective layer 29 and the second metal layer 45 .
  • the fourth electrode 84 may be electrically connected to the first conductive third semiconductor layer 21 through the third contact portion 93 .
  • the light emitting device may include the first conduct portion 91 .
  • the first conduct portion 91 may be provided through the first light emitting structure 10 .
  • the first conduct portion 91 may be provided through the first conductive first semiconductor layer 11 , the first active layer 12 and the second conductive second semiconductor layer 13 .
  • a plurality of first contact portions 91 may be formed in the first light emitting structure 10 according to the embodiment.
  • the first contact portions 91 may be disposed along first through holes 55 of the first light emitting structure 10 .
  • a first region of the first contact portion 91 may be electrically connected to the first electrode 81 and a second region of the first contact portion 91 may make contact with a top surface of the first conductive first semiconductor layer 11 .
  • the first region of the first contact portion 91 may make contact with the third metal layer 50 .
  • the first region of the first contact portion 91 may make contact with the top surface of the third metal layer 50 .
  • the first contact portion 91 may make contact with an n face of the first conductive first semiconductor layer 11 .
  • the first light emitting structure 10 may be formed with a plurality of first through holes 55 as shown in FIG. 2 and the first contact portion 91 may be formed in each first through hole 55 .
  • the first contact portions 91 may be spaced apart from each other on the top surface of the first conductive first semiconductor layer 11 . Since the first contact portions 91 are distributed on the first light emitting structure 10 , current applied to the first conductive first semiconductor layer 11 may be spread. Thus, the degradation of the first conductive first semiconductor layer 11 can be prevented and the combination efficiency of the electrons and holes in the first active layer 12 can be improved.
  • the first contact portion 91 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the first contact portion 91 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the third conduct portion 93 .
  • the third conduct portion 93 may be provided through the second light emitting structure 20 .
  • the third conduct portion 93 may be provided through the first conductive third semiconductor layer 21 , the second active layer 22 and the second conductive fourth semiconductor layer 23 .
  • a plurality of third contact portions 93 may be formed in the second light emitting structure 20 according to the embodiment.
  • the third contact portions 91 may be disposed along second through holes 65 of the second light emitting structure 20 .
  • a first region of the third contact portion 93 may be electrically connected to the third electrode 83 and a second region of the third contact portion 93 may make contact with a top surface of the first conductive third semiconductor layer 21 .
  • the first region of the third contact portion 93 may make contact with the third electrode 83 .
  • the first region of the third contact portion 93 may make contact with the top surface of the third electrode 83 .
  • the third contact portion 93 may make contact with an n face of the first conductive third semiconductor layer 21 .
  • the second light emitting structure 20 may be formed with a plurality of second through holes 65 as shown in FIG. 2 and the third contact portion 93 may be formed in each second through hole 65 .
  • the third contact portions 93 may be spaced apart from each other on the top surface of the first conductive third semiconductor layer 21 . Since the third contact portions 93 are distributed on the second light emitting structure 20 , current applied to the first conductive third semiconductor layer 21 may be spread. Thus, the degradation of the first conductive third semiconductor layer 21 can be prevented and the combination efficiency of the electrons and holes in the second active layer 22 can be improved.
  • the third contact portion 93 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the third contact portion 93 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include the second conduct portion 92 .
  • the second conduct portion 92 may be electrically connected to the second and third electrodes 82 and 83 .
  • the second contact portion 92 may be disposed between the first and second light emitting structures 10 and 20 .
  • the second contact portion 92 may be exposed between the first and second light emitting structures 10 and 20 .
  • One end of the second contact portion 92 may come into contact with the top surface of the second electrode 82 and the other end of the second contact portion 92 may come into contact with the top surface of the third electrode 83 .
  • the second contact portion 92 may be exposed on the third region of the channel layer 30 .
  • the second contact portion 92 may be spaced apart from the side of the first light emitting structure 10 .
  • the second contact portion 92 may be spaced apart from the side of the second light emitting structure 20 .
  • the second contact portion 92 may include an ohmic layer, an intermediate layer, and an upper layer.
  • the ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact.
  • the intermediate layer may be realized by using a material selected from the group consisting of Ni, Cu, and Al.
  • the upper layer may include Au.
  • the second contact portion 92 may include at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.
  • the light emitting device may include a fourth contact portion 94 .
  • the fourth contact portion 94 may be spaced apart from the second light emitting structure 20 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 through the channel layer 30 .
  • the fourth contact portion 94 may be electrically connected to the second electrode 82 .
  • the fourth contact portion 94 may come into contact with a top surface of the second electrode 82 .
  • the fourth contact portion 94 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.
  • the fourth contact portion 94 and the third contact portion 93 may be formed of same material or mutually different materials.
  • a plurality of second contact portions 92 and fourth contact portions 94 may be provided.
  • power may be applied to the first and second light emitting structures 10 and 20 through the first electrode 81 and the fourth electrode 84 .
  • the power may be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 of the first electrode 81 and the fourth contact portion 94 .
  • the fourth contact portion 94 may be electrically connected to the fourth electrode 84 . Therefore, the fourth contact portion 94 is connected to a power pad through a wire bonding scheme, thereby supplying power to the second conductive fourth semiconductor layer 23 .
  • the power can be applied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the fourth contact portion 94 .
  • current concentration can be prevented, and the electrical reliability can be improved.
  • a high-voltage light emitting device can be implemented.
  • the embodiment illustrates the first and second light emitting structures 10 and 20
  • the number of the light emitting structures may not be limited thereto.
  • three or more of the light emitting structures may be provided.
  • the light emitting structures may be electrically connected to each other in series or in a row.
  • the first through holes 55 are formed from the top surface of the first light emitting structure 10 .
  • the second through holes 65 are formed from the top surface of the second light emitting structure 20 .
  • an area of the electrode disposed on the top surface of the first and second light emitting structures 10 and 20 can be reduced so that a protective layer may be omitted from the top surface or lateral side of the first and second light emitting structures 10 and 20 . Therefore, the extraction efficiency of light emitted to the outside from the first and second light emitting structures 10 and 20 can be improved.
  • FIG. 8 is a sectional view showing a light emitting device package to which the light emitting device according to the embodiment is applied.
  • the light emitting device package may include a body 120 , first and second lead electrodes 131 and 132 formed on the body 120 , a light emitting device 100 provided on the body 120 and electrically connected to the first and second lead electrodes 131 and 132 and a molding member 140 that surrounds the light emitting device 100 .
  • the body 120 may include silicon, synthetic resin or metallic material, and an inclined surface may be formed in the vicinity of the light emitting device 100 .
  • the first and second lead electrodes 131 and 132 are electrically isolated from each other to supply power to the light emitting device 100 .
  • the first and second lead electrode 131 and 132 can improve the light efficiency by reflecting the light emitted from the light emitting device 100 . Further, the first and second lead electrodes 131 and 132 dissipate heat generated from the light emitting device 100 to the outside.
  • the light emitting device 100 can be installed on the body 120 or the first or second lead electrode 131 or 132 .
  • the light emitting device 100 may be electrically connected to the first and second lead electrodes 131 and 132 through one of a wire scheme, a flip-chip scheme, and a die-bonding scheme.
  • the molding member 140 may surround the light emitting device 100 to protect the light emitting device 100 .
  • the molding member 140 may include phosphors to change the wavelength of the light emitted from the light emitting device 100 .
  • a plurality of light emitting device or light emitting device packages according to the embodiment may be arrayed on a board, and an optical member including a lens, a light guide plate, a prism sheet, or a diffusion sheet may be provided on the optical path of the light emitted from the light emitting device package.
  • the light emitting device package, the board, and the optical member may serve as a light unit.
  • the light unit is realized in a top view type or a side view type and variously provided in display devices of a portable terminal and a laptop computer or a lighting apparatus and an indicator apparatus.
  • a lighting apparatus according to another embodiment can include a light emitting device, or a light emitting device package according to the embodiment.
  • the lighting apparatus may include a lamp, a signal lamp, an electric sign board and a headlight of a vehicle.
  • the light emitting device may be applied to the light unit.
  • the light unit has a structure in which a plurality of light emitting devices are arrayed.
  • the light unit may include a display device as shown in FIGS. 9 and 10 and the lighting apparatus as shown in FIG. 11 .
  • a display device 1000 includes a light guide plate 1041 , a light emitting module 1031 for supplying the light to the light guide plate 1041 , a reflective member 1022 provided below the light guide plate 1041 , an optical sheet 1051 provided above the light guide plate 1041 , a display panel 1061 provided above the optical sheet 1051 , and a bottom cover 1011 for receiving the light guide plate 1041 , the light emitting module 1031 , and the reflective member 1022 .
  • the embodiment is not limited to the above structure.
  • the bottom cover 1011 , the reflective member 1022 , the light guide plate 1041 and the optical sheet 1051 may constitute a light unit 1050 .
  • the light guide plate 1041 diffuses the light to provide surface light.
  • the light guide plate 1041 may include transparent material.
  • the light guide plate 1041 may include one of acryl-based resin, such as PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PC (polycarbonate), COC (cyclic olefin copolymer) and PEN (polyethylene naphthalate) resin.
  • PMMA polymethyl methacrylate
  • PET polyethylene terephthalate
  • PC polycarbonate
  • COC cyclic olefin copolymer
  • PEN polyethylene naphthalate
  • the light emitting module 1031 supplies the light to at least one side of the light guide plate 1041 .
  • the light emitting module 1031 serves as the light source of the display device.
  • At least one light emitting module 1031 is provided to directly or indirectly supply the light from one side of the light guide plate 1041 .
  • the light emitting module 1031 may include a board 1033 and light emitting devices 100 or the light emitting device package 200 according to the embodiment described above.
  • the light emitting packages 200 may be arrayed on the board 1033 while being spaced apart from each other at the predetermined interval.
  • the board 1033 may be a printed circuit board (PCB) including a circuit pattern.
  • the board 1033 may also include a metal core PCB (MCPCB) or a flexible PCB (FPCB) as well as the PCB, but the embodiment is not limited thereto. If the light emitting device packages 200 are installed on the lateral side of the bottom cover 1011 or on a heat dissipation plate, the board 1033 may be omitted. The heat dissipation plate may partially make contact with the top surface of the bottom cover 1011 .
  • the light emitting device packages 200 are installed such that light exit surfaces of the light emitting device packages 200 are spaced apart from the light guide plate 1041 at a predetermined distance, but the embodiment is not limited thereto.
  • the light emitting device packages 200 may directly or indirectly supply the light to a light incident part, which is one side of the light guide plate 1041 , but the embodiment is not limited thereto.
  • the reflective member 1022 may be disposed below the light guide plate 1041 .
  • the reflective member 1022 reflects the light, which travels downward through the bottom surface of the light guide plate 1041 , upward, thereby improving the brightness of the light unit 1050 .
  • the reflective member 1022 may include PET, PC or PVC resin, but the embodiment is not limited thereto.
  • the reflective member 1022 may serve as the top surface of the bottom cover 1011 , but the embodiment is not limited thereto.
  • the bottom cover 1011 may receive the light guide plate 1041 , the light emitting module 1031 , and the reflective member 1022 therein. To this end, the bottom cover 1011 has a receiving section 1012 having a box shape with an opened top surface, but the embodiment is not limited thereto. The bottom cover 1011 can be coupled with the top cover (not shown), but the embodiment is not limited thereto.
  • the bottom cover 1011 can be manufactured through a press process or an extrusion process by using metallic material or resin material.
  • the bottom cover 1011 may include metal or non-metallic material having superior thermal conductivity, but the embodiment is not limited thereto.
  • the display panel 1061 is an LCD panel including first and second transparent substrates, which are opposite to each other, and a liquid crystal layer disposed between the first and second substrates.
  • a polarizing plate can be attached to at least one surface of the display panel 1061 , but the embodiment is not limited thereto.
  • the display panel 1061 displays information by using light passing through the optical sheet 1051 .
  • the display device 1000 can be applied to various portable terminals, monitors of notebook computers and laptop computers, and televisions.
  • the optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one transmissive sheet.
  • the optical sheet 1051 includes at least one of a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhanced sheet.
  • the diffusion sheet diffuses the incident light
  • the horizontal and/or vertical prism sheet concentrates the incident light onto a display region
  • the brightness enhanced sheet improves the brightness by reusing the light to be lost.
  • a protective sheet can be provided on the display panel 1061 , but the embodiment is not limited thereto.
  • the light guide plate 1041 and the optical sheet 1051 can be provided on the optical path of the light emitting module 1031 as optical members, but the embodiment is not limited thereto.
  • FIG. 10 is a sectional view showing another example of a display device according to the embodiment.
  • the display device 1100 includes a bottom cover 1152 , a board 1020 on which the light emitting devices 100 are arrayed, an optical member 1154 , and a display panel 1155 .
  • the board 1020 and the light emitting device packages 200 may constitute a light emitting module 1060 .
  • the bottom cover 1152 , at least one light emitting module 1060 , and the optical member 1154 may constitute the light unit.
  • the bottom cover 1152 can be provided therein with a receiving section 1153 , but the embodiment is not limited thereto.
  • the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhanced sheet.
  • the light guide plate may include PC or PMMA (Poly methyl methacrylate). The light guide plate can be omitted.
  • the diffusion sheet diffuses the incident light
  • the horizontal and vertical prism sheets concentrate the incident light onto a display region
  • the brightness enhanced sheet improves the brightness by reusing the light to be lost.
  • the optical member 1154 is disposed above the light emitting module 1060 in order to convert the light emitted from the light emitting module 1060 into the surface light. In addition, the optical member 1154 may diffuse or collect the light.
  • FIG. 11 is a perspective view showing a lighting apparatus according to the embodiment.
  • the lighting apparatus may include a cover 2100 , a light source module 2200 , a radiator 2400 , a power supply part 2600 , an inner case 2700 , and a socket 2800 .
  • the lighting apparatus according to the embodiment may further include at least one of a member 2300 and a holder 2500 .
  • the light source module 2200 may include the light emitting device package according to the embodiment.
  • the cover 2100 may have a blub shape or a hemispheric shape.
  • the cover 2100 may have a hollow structure which is partially open.
  • the cover 2100 may be optically coupled with the light source module 2200 .
  • the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200 .
  • the cover 2100 may be an optical member.
  • the cover 2100 may be coupled with the radiator 2400 .
  • the cover 2100 may include a coupling part which is coupled with the radiator 2400 .
  • the cover 2100 may include an inner surface coated with a milk-white pigment.
  • the milk-white pigment may include a diffusion material to diffuse light.
  • the roughness of the inner surface of the cover 2100 may be greater than the roughness of the outer surface of the cover 2100 .
  • the surface roughness is provided for the purpose of sufficiently scattering and diffusing the light from the light source module 2200 .
  • the cover 2100 may include glass, plastic, polypropylene (PP), polyethylene (PE) or polycarbonate (PC).
  • the polycarbonate (PC) has the superior light resistance, heat resistance and strength among the above materials.
  • the cover 2100 may be transparent so that a user may view the light source module 2200 from the outside, or may be opaque.
  • the cover 2100 may be provided through a blow molding scheme.
  • the light source module 220 may be disposed at one surface of the radiator 2400 . Accordingly, the heat from the light source module 220 is transferred to the radiator 2400 .
  • the light source module 2200 may include a light source 2210 , a connection plate 2230 , and a connector 2250 .
  • the member 2300 is disposed on a top surface of the radiator 2400 , and includes guide grooves 2310 into which a plurality of light sources 2210 and the connector 2250 are inserted.
  • the guide grooves 2310 correspond to a board of the light source 2210 and the connector 2250 .
  • a surface of the member 2300 may be coated with a light reflective material.
  • the surface of the member 2300 may be coated with white pigment.
  • the member 2300 reflects again light, which is reflected by the inner surface of the cover 2100 and is returned to the direction of the light source module 2200 , to the direction of the cover 2100 . Accordingly, the light efficiency of the lighting apparatus according to the embodiment may be improved.
  • the member 2300 may include an insulating material.
  • the connection plate 2230 of the light source module 2200 may include an electrically conductive material.
  • the radiator 2400 may be electrically connected to the connection plate 2230 .
  • the member 2300 may be formed by an insulating material, thereby preventing the connection plate 2230 from being electrically shorted with the radiator 2400 .
  • the radiator 2400 receives heat from the light source module 2200 and the power supply part 2600 and dissipates the heat.
  • the holder 2500 covers a receiving groove 2719 of an insulating part 2710 of an inner case 2700 . Accordingly, the power supply part 2600 received in the insulating part 2710 of the inner case 2700 is sealed.
  • the holder 2500 includes a guide protrusion 2510 .
  • the guide protrusion 2510 has a hole and a protrusion of the power supply part 2600 extends by passing through the hole.
  • the power supply part 2600 processes or converts an electric signal received from the outside and provides the processed or converted electric signal to the light source module 2200 .
  • the power supply part 2600 is received in the receiving groove 2719 of the inner case 2700 , and is sealed inside the inner case 2700 by the holder 2500 .
  • the power supply part 2600 may include a protrusion 2610 , a guide part 2630 , a base 2650 , and an extension part 2670 .
  • the guide part 2630 has a shape protruding from one side of the base 2650 to the outside.
  • the guide part 2630 may be inserted into the holder 2500 .
  • a plurality of components may be disposed on one surface of the base 2650 .
  • the components may include a DC converter to convert AC power provided from an external power supply into DC power, a driving chip to control the driving of the light source module 2200 , and an electrostatic discharge (ESD) protection device to protect the light source module 2200 , but the embodiment is not limited thereto.
  • the extension part 2670 has a shape protruding from an opposite side of the base 2650 to the outside.
  • the extension part 2670 is inserted into an inside of the connection part 2750 of the inner case 2700 , and receives an electric signal from the outside.
  • a width of the extension part 2670 may be smaller than or equal to a width of the connection part 2750 of the inner case 2700 .
  • First terminals of a “+ electric wire” and a “ ⁇ electric wire” are electrically connected to the extension part 2670 and second terminals of the “+ electric wire” and the “ ⁇ electric wire” may be electrically connected to a socket 2800 .
  • the inner case 2700 may include a molding part therein together with the power supply part 2600 .
  • the molding part is prepared by hardening molding liquid, and the power supply part 2600 may be fixed inside the inner case 2700 by the molding part.
  • the embodiment provides a light emitting device capable of improving light extraction efficiency and product yield, a light emitting device package, and a light unit.
  • a light emitting device comprises a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer
  • a light emitting device comprises a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer
  • a light emitting device comprises a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer
  • the light emitting device, the light emitting device package and the light unit according to the embodiment can improve the light extraction efficiency and product yield.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

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EP2768032B1 (fr) 2017-08-16
JP2014158020A (ja) 2014-08-28
CN103996675B (zh) 2017-01-18
EP2768032A2 (fr) 2014-08-20
CN103996675A (zh) 2014-08-20
KR102065390B1 (ko) 2020-01-13
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EP2768032A3 (fr) 2015-11-18
US20140231833A1 (en) 2014-08-21

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