US9356081B2 - Organic light emitting display device - Google Patents

Organic light emitting display device Download PDF

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US9356081B2
US9356081B2 US14/537,740 US201414537740A US9356081B2 US 9356081 B2 US9356081 B2 US 9356081B2 US 201414537740 A US201414537740 A US 201414537740A US 9356081 B2 US9356081 B2 US 9356081B2
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transistor
plate
oxide semiconductor
light emitting
organic light
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US20150137099A1 (en
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Heedong Choi
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H01L27/3248—
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H01L27/3265—
    • H01L27/3269—
    • H01L51/52—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen

Definitions

  • the present disclosure relates to an organic light emitting display device.
  • organic light emitting display devices have been in the spotlight as being display devices having fast response rates, high light emitting efficiency, high luminance, and wide viewing angles. These advantages are due to the use of an organic light emitting diode, which is self-illuminating (emits light by itself).
  • Such an organic light emitting display device includes pixels arranged in a matrix form, the pixels including an organic light emitting diode.
  • the display device controls brightness of pixels that are selected by a scan signal, according to a grayscale of data.
  • Each pixel of the organic light emitting display device includes, in addition to the organic light emitting diode, a data line and a gate line crossing each other, a transistor, and a storage capacitor connected to the data line and the gate line.
  • Each pixel may include a corresponding transistor in order to further perform various functions. Therefore, a number of signal lines for providing various signals to transistors increases, and thus a pixel structure becomes more complex. For example, when an internal or external compensation circuit for compensating for luminance non-uniformity between pixels is applied to a pixel structure, a transistor related to a sensing operation for a compensation may be added. This increases the number of necessary signal lines, and thus this causes complexity of the pixel structure.
  • the number of signal lines may be increased, and thus a pixel structure becomes more complex.
  • the number of the signal lines is increased due to the increased number of design needs, such as additions of various functions such as sensing and compensation functions, need for larger size and the higher resolution. Therefore, the number of IC pads and the number of ICs are increased, and thus the pixel structure becomes more complex.
  • an aspect of the present disclosure is to provide an organic light emitting display device having a simple and compact structure.
  • Another aspect of the present disclosure is to provide an organic light emitting display device having a pixel structure with an improved opening ratio.
  • Another aspect of the present disclosure is to provide an organic light emitting display device having a pixel structure including a double capacitor in a pixel by a simplified process flow.
  • Another aspect of the present disclosure is to provide an organic light emitting display device having a pixel structure capable of preventing a short defect which may be caused by a step difference due to a contact hole.
  • an organic light emitting display device comprises a driving transistor, including a semiconductor layer that includes an oxide semiconductor material, and for driving an organic light emitting diode.
  • the display device further comprises a first transistor including a semiconductor layer including an oxide semiconductor material, controlled by a scan signal, and connected between a reference voltage line and a first node of the driving transistor.
  • the display device further comprises a second transistor including a semiconductor layer including the oxide semiconductor material, controlled by the scan signal commonly provided from a gate line, and connected between a data line and a second node of the driving transistor.
  • the display device also includes a first plate including the oxide semiconductor material of which conductive characteristic is improved, and connected to the semiconductor layer of the driving transistor and the semiconductor layer of the first transistor.
  • the display device also includes a second plate positioned on the first plate, and connected to the semiconductor layer of the second transistor and a gate electrode of the driving transistor.
  • the device further includes a pixel electrode of the organic light emitting diode, positioned on the second plate and connected to the first plate through a contact hole.
  • an organic light emitting display device can provide a simple and compact structure.
  • an organic light emitting display device can provide a pixel structure capable of increasing an opening ratio.
  • an organic light emitting display device can include a double capacitor in a pixel by a simplified process flow.
  • an organic light emitting display device can prevent a short defect, which may be caused by a step difference due to a contact hole.
  • a display panel having a good quality can be manufactured in a high throughput.
  • FIG. 1 is an overall system construction diagram for an organic light emitting display device to which embodiments are applied.
  • FIG. 2 is an equivalent circuit diagram for a pixel in a display panel of the organic light emitting display device of FIG. 1 , according to one or more embodiments.
  • FIG. 3A is a cross-sectional view schematically illustrating a portion of a display panel of an organic light emitting display device according to a first embodiment.
  • FIG. 3B is an enlarged view of a portion A in FIG. 3A , according to the first embodiment.
  • FIG. 4 is a cross-sectional view taken along a cutting line I-I′ of FIG. 3A , according to one or more embodiments.
  • FIG. 5 is a cross-sectional view taken along a cutting line II-II′ of FIG. 3B , according to one or more embodiments.
  • FIG. 6A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a second embodiment.
  • FIG. 6B is an enlarged view of a portion B in FIG. 6A , according to the second embodiment.
  • FIG. 7 is a cross-sectional view taken along a cutting line III-III′ of FIG. 6A , according to one or more embodiments.
  • FIG. 8 is a cross-sectional view taken along a cutting line IV-IV′ of FIG. 6B , according to one or more embodiments.
  • FIG. 9A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a third embodiment.
  • FIG. 9B is an enlarged view of a portion C in FIG. 9A , according to the third embodiment.
  • FIG. 10 is a cross-sectional view taken along a cutting line V-V′ of FIG. 9B , according to one or more embodiments.
  • FIG. 11A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a fourth embodiment.
  • FIG. 11B is an enlarged view of a portion D in FIG. 11A , according to the fourth embodiment.
  • FIG. 12 is a cross-sectional view taken along a cutting line VI-VI′ of FIG. 11B , according to one or more embodiments.
  • first, second, A, B, (a), (b) or the like may be used herein when describing components of the present disclosure.
  • Each of these terminologies is not used to define an essence, order or sequence of a corresponding component but used merely to distinguish the corresponding component from other component(s).
  • another structural element may “be connected to”, “be coupled to”, or “be in contact with” the structural elements as well as that the certain structural element is directly connected to or is in direct contact with another structural element.
  • Embodiments of the present disclosure provide an organic light emitting display device having a panel structure with a simple and compact pixel structure, despite an increased number of signal lines connected to the pixel.
  • positions of a transistor, a capacitor, an organic light emitting diode, and a signal line connection is simplified and compact in the pixel structure, according to some embodiments.
  • an opening ratio can be increased, defect occurrence possibility can be reduced, manufacturing can be easier, and a panel having a good quality can be manufactured in a high throughput. Specifically, such an effect may becomes larger when an organic light emitting display device including a panel of a high resolution and a large size is manufactured.
  • FIG. 1 is an overall system construction diagram for an organic light emitting display device to which embodiments are applied.
  • an organic light emitting display device 10 includes a display panel 11 , a data driving unit 12 , a gate driving unit 13 and a timing controller 14 .
  • the display panel 11 includes a plurality of pixels P disposed in areas where a data line DL (of a plurality of data lines DL formed in a direction) intersects with a gate line GL (of a plurality of gate lines GL formed in another direction).
  • the data driving unit 12 provides a data voltage through the data line.
  • the gate driving unit 13 provides a scan signal through the gate line.
  • the timing controller 14 controls the driving timing of the data driving unit 12 and the gate driving unit 13 .
  • the plurality of data lines DL 1 , . . . , and DL 4 N are formed in a direction and the plurality of gate lines GL 1 , . . . , and GLM are formed in another direction, the gate lines GL 1 , . . . , and GLM intersecting the data lines DL 1 , . . . , and DL 4 N.
  • each pixel P is defined in an area where the data lines DL 1 , . . . , and DL 4 N and the M gate lines GL 1 , . . . , and GLM intersect.
  • a pixel structure for each pixel P is described in more detail with reference to FIG. 2 .
  • FIG. 2 is an equivalent circuit diagram for a pixel in the display panel of the organic light emitting display device of FIG. 1 , according to one or more embodiments.
  • each pixel P is connected to one data line DL, and receives only one scan signal SCAN through one gate line GL.
  • each pixel includes an Organic Light Emitting Diode (OLED), a driving transistor DT, a first transistor T 1 , a second transistor T 2 , a storage capacitor Cst, and the like.
  • OLED Organic Light Emitting Diode
  • each pixel includes three transistors DT, T 1 , and T 2 and one storage capacitor Cst, and thus it is referred to that each pixel has a 3T(Transistor)1C(Capacitor) structure.
  • the driving transistor DT in each pixel receives a driving voltage EVDD provided through a driving voltage line DVL, and is a transistor driving the OLED under a control of a voltage (i.e., a data voltage) of a gate node N 2 , which is applied through the second transistor T 2 .
  • the driving transistor DT includes a first node N 1 , the second node N 2 , and a third node N 3 .
  • the driving transistor DT is connected to the first transistor T 1 through the first node N 1 , the driving transistor DT is connected to the second node N 2 , and receives the driving voltage EVDD through the third node N 3 .
  • the first node of the driving transistor DT may be a source node (may be referred to as a source electrode)
  • the second node of the driving transistor DT may be a gate node (may be referred to as a gate electrode)
  • the third node of the driving transistor DT may be a drain node (may be referred to as a drain electrode).
  • the first node, the second node, and the third node of the driving transistor DT may be changed according to a type change of a transistor, a circuit change, and the like.
  • the first transistor T 1 is controlled by the scan signal SCAN provided from the gate line GL.
  • the first transistor T 1 is connected between the first node N 1 of the driving transistor DT and a reference voltage line RVL providing a reference voltage Vref or a connection pattern CP connected to the reference voltage line RVL.
  • the first transistor T 1 may be referred to as a sensor transistor.
  • the second transistor T 2 is controlled by the scan signal SCAN commonly provided through the gate line GL, and is connected between a corresponding data line DL and the second node N 2 of the driving transistor DT.
  • the second transistor T 2 may be referred to as a switching transistor.
  • the storage capacitor Cst is connected between the first node N 1 and the second node N 2 of the driving transistor.
  • the storage capacitor Cst may maintain a data voltage during one frame.
  • the first transistor T 1 and the second transistor T 2 are controlled by one scan signal provided through one gate line (i.e., a common gate line).
  • one gate line i.e., a common gate line.
  • each pixel since each pixel uses one scan signal, each pixel has a basic pixel structure of a “3T1C based 1 scan structure” in a first embodiment of the present disclosure.
  • the second transistor T 2 basically is a transistor that serves a driving function which applies a data voltage to the gate node N 2 of the driving transistor DT.
  • the first transistor T 1 may also be related to a driving function, however, the first transistor basically is a transistor that serves a sensing function which compensates for a luminance deviation between pixels. Since uses and functions of the two transistors T 1 and T 2 are different, controlling of the two transistors T 1 and T 2 using one scan signal has an effect on related operations (e.g., a driving operation and a sensing operation).
  • a separate device e.g., a second switch and the like
  • a change of an operation scheme e.g., an operation timing and the like
  • each pixel according to the organic light emitting display device 10 of the first embodiment has the “3T1C based 1 scan structure (i.e., a common scan structure)” which receives one scan signal SCAN through one gate line GL under the 3T1C structure. That is, the scan signal (i.e., a common scan signal) provided through one gate line GL (e.g., a common gate line connected to both the first and second transistors) is commonly applied to the gate node of the first transistor and the gate node of the second transistor. Alternatively, different scan signals may be applied to the gate node of the first transistor and the gate node of the second transistor, respectively.
  • the scan signal i.e., a common scan signal
  • the gate line GL e.g., a common gate line connected to both the first and second transistors
  • different scan signals may be applied to the gate node of the first transistor and the gate node of the second transistor, respectively.
  • the pixel structure of the organic light emitting display device 10 includes a “signal line connection structure” related to a connection between each pixel and various signal lines, such as the data line, the gate line GL, the driving voltage line DVL, and the reference voltage line RVL, in addition to the “basic pixel structure (i.e., 3T1C based 1 scan structure)” described with reference to FIG. 2 .
  • a “signal line connection structure” related to a connection between each pixel and various signal lines, such as the data line, the gate line GL, the driving voltage line DVL, and the reference voltage line RVL, in addition to the “basic pixel structure (i.e., 3T1C based 1 scan structure)” described with reference to FIG. 2 .
  • the various signal lines further include the reference voltage line RVL for providing the reference voltage Vref to each pixel, the driving voltage line DVL for providing the driving voltage EVDD to each pixel, and the like, in addition to the data line for providing the data voltage to each pixel and the gate line for providing the scan signal to each pixel.
  • the above-mentioned reference voltage line RVL and the driving voltage line DVL are formed in parallel with the data line DL.
  • the number of the reference voltage lines RVL and the number of the driving voltage lines DVL may be the same as the number of the data lines or may be different from the number of the data lines.
  • each pixel is connected to one data line DL and one gate line GL, and may be directly connected to one driving voltage line DVL and one reference voltage line RVL.
  • all of the signal line connection structures of each pixel may be the same. That is, a basic unit of the signal line connection structure is one pixel, and thus the signal line connection structure may be regular per one pixel (i.e., one pixel row).
  • the pixel connected to the data line DL may be, for example, an R (red) pixel, a G (green) pixel, a B (blue) pixel and a W (White) pixel.
  • some pixels may be directly connected to the driving voltage line DVL and the reference voltage line RVL, and other pixels may be connected to each of the driving voltage line DVL and the reference voltage line RVL through the connection pattern CP (illustrated, for instance, in FIGS. 3A and 6A ) instead the other pixels are directly connected to the driving voltage line DVL and the reference voltage line RVL.
  • the signal line connection structures of each pixel may be different.
  • the signal line connection structures of each pixel may be the same per a plurality of pixels. That is, a unit of the signal line connection structure may be the plurality of pixels not one pixel P.
  • the signal line connection structure may be repeatedly regular per the plurality of pixels (i.e., a plurality of pixel rows).
  • the transistors DT, T 1 and T 2 are N types, however, these are for convenience of description, and according to a circuit design change, all of the transistors DT, T 1 , and T 2 may be changed to P types. Alternatively, some of the transistors DT, T 1 and T 2 may be implemented as N types and others of the transistors DT, T 1 and T 2 may be implemented as P types. In addition, the OLED may be changed to an inverted type.
  • TFTs Thin Film Transistors
  • FIG. 3A is a cross-sectional view schematically illustrating a portion of the display panel of the organic light emitting display device according to the first embodiment.
  • FIG. 3B is an enlarged view of a portion A in FIG. 3A , according to the first embodiment.
  • each pixel P connected to the data line DL includes the driving transistor DT receiving the driving voltage EVDD and driving the OLED, the first transistor T 1 (see FIG. 3B ) receiving the reference voltage Vref and transferring the reference voltage Vref to the first node N 1 of the driving transistor DT ( FIG. 3B ), the second transistor T 2 ( FIG. 3B ) receiving the data voltage Vdata and transferring the data voltage Vdata to the second node N 2 of the driving transistor DT, the capacitor Cst ( FIG. 3B ) connected between the first node N 1 and the second node N 2 of the driving transistor DT, and the like.
  • the pixel structure of such a pixel is referred to as the “3T1C based 1 scan structure”.
  • the first embodiment of the present disclosure needs a driving method and an additional construction (e.g., a second switch and the like) so as to normally perform a driving operation and a sensing operation of the pixel without problems, in implementing a simple and compact pixel structure, that is, the 3T1C based 1 scan structure.
  • a driving method and an additional construction e.g., a second switch and the like
  • the first transistor T 1 is the sensor transistor which senses to compensate for a luminance deviation between the pixels
  • the second transistor T 2 is the switching transistor which selects the driving transistor.
  • a semiconductor layer 303 a of each driving transistor DT, a semiconductor layer 303 b of each first transistor T 1 and a semiconductor layer 303 c of each second transistor T 2 are formed on a substrate 300 .
  • the semiconductor layer 303 a of each driving transistor DT is formed in correspondence to an area where a gate electrode 301 a of each driving transistor DT is formed.
  • the semiconductor layer 303 b of each first transistor T 1 is formed in correspondence to a portion playing a role of a gate electrode in a gate line 301 b of each first transistor T 1 .
  • the semiconductor layer 303 c of each second transistor T 2 is formed in correspondence to a portion playing a role of a gate electrode in a gate line 301 b of each second transistor T 2 .
  • An area of the semiconductor layer 303 a of each driving transistor DT, corresponding to the area where the gate electrode 301 a is formed is a first area 303 ab which is a channel area.
  • An area of the semiconductor layer 303 b of each first transistor T 1 , corresponding to the gate line 301 b is a first area 303 ba which is a channel area.
  • An area of the semiconductor layer 303 c of each second transistor T 2 , corresponding to the gate line 301 b becomes a channel area. Both sides of each channel area become source-drain areas by an injection of impurities.
  • the gate electrode 301 a of each driving transistor DT, the gate line 301 b for forming the gate electrodes of the first and second transistors T 1 and T 2 , a connection pattern 302 a connected to each driving voltage line DVL, a connection pattern 302 b connected to each reference voltage line RVL, and a first plate 302 c for forming each storage capacitor Cst are formed, on the substrate 300 on which the semiconductor layer 303 a of each driving transistor DT, the semiconductor layer 303 b of each first transistor T 1 and the semiconductor layer 303 c of each second transistor T 2 are formed.
  • the gate line 301 b is a common gate line for commonly applying the scan signal to the gate electrodes of the first and second transistors T 1 and T 2 included in the pixel, which are connected to the gate line 301 b . Therefore, a portion where the gate electrode is formed in the gate line 301 b is formed wider than other portions in consideration of a channel length L which is a designed value. In addition, a portion where a gate electrode is not formed in the gate line 301 b may be narrowly formed in order to minimize a parasitic capacitance.
  • the signal lines such as the driving voltage line 305 and the data lines 306 corresponding each pixel row are formed on the substrate 300 .
  • the first plate 302 c connected to the source electrode 307 c of the driving transistor DT of each pixel, and a pixel electrode 308 connected to the source electrode 307 e of the first transistor T 1 through the contact hole in each pixel are formed per each pixel.
  • a pixel defining film (referred to as a bank) 309 (illustrating in the cross sectional view of FIG. 4 ) which defines the pixel is formed.
  • An organic layer (not shown) including a light emitting layer corresponding to each pixel may be laminated on the pixel defining film 309 , and a common electrode for all pixels may be laminated on the organic layer.
  • a WOLED White Organic Light Emitting Diode
  • an organic layer including the same light emitting layer may be laminated and a color filter may be formed in a light emitting direction in all pixels.
  • FIG. 4 is a cross-sectional view taken along a cutting line I-I′ of FIG. 3A .
  • FIG. 5 is a cross-sectional view taken along a cutting line II-II′ of FIG. 3B .
  • a buffer layer 310 is formed on the substrate 300 .
  • the semiconductor layer 303 a of the driving transistor DT and the semiconductor layer 303 b of each first transistor T 1 are formed on the substrate 300 on which the buffer layer 310 is formed.
  • the semiconductor layer 303 c of the second transistor T 2 is formed on the substrate in a manner similar to the semiconductor layer 303 a of the driving transistor DT and the semiconductor layer 303 b of each first transistor T 1 .
  • Each of the semiconductor layers 303 a and 303 b includes first areas 303 aa and 303 ba where a plasma is not processed in central areas thereof, and second areas 303 ab and 303 bb which are conductive by a plasma process and positioned at both sides of the first areas 303 aa and 303 ba , respectively.
  • the semiconductor layer 303 c of the second transistor T 2 includes a first area where a plasma is not processed in a central area thereof, and second areas which become conductive by way of a plasma process and positioned at both sides of the first area.
  • a gate insulating film 311 is formed in correspondence to the first area 303 aa on the substrate 300 and the oxide semiconductor layer 303 a including the first and second areas 303 aa and 303 ab .
  • the gate insulating film 311 is formed in correspondence to the first area 303 ba on the substrate 300 and the oxide semiconductor layer 303 b including the first and second areas 303 ba and 303 bb .
  • the gate insulating film 311 is formed on the buffer layer 310 in correspondence to the first plate 302 c for forming the storage capacitor Cst.
  • the gate insulating film 311 is formed in correspondence to the first area of the semiconductor layer 303 c of the second transistor T 2 .
  • the gate line 301 b having a plane form equal to that of the gate insulating film 311 and extending in a direction on the gate insulating film 311 formed on the substrate 300 is formed.
  • the gate line 301 b formed on the first area 303 ab plays the role of the gate electrode of the first transistor T 1 .
  • the gate line 301 b extends in a direction on the gate insulating film 311 , which is formed in correspondence to the first area of the semiconductor layer 303 c of the second transistor T 2 .
  • the gate line 301 b extending in correspondence to the first area of the semiconductor layer 303 c of the second transistor T 2 plays a role of the gate electrode of the second transistor T 2 .
  • the first plate 302 c and the gate electrode 301 a of the driving transistor DT are formed on the gate insulating film 311 .
  • the gate line 301 b , the first plate 302 c and the gate electrode 301 a of the driving transistor DT are formed with the same gate electrode material by the same process.
  • An interlayer dielectric film 312 including an inorganic insulating material (e.g., oxide silicon (SiO2) or nitride silicon (SiNx)) or an organic insulating material is formed on the gate line 301 b , the first plate 302 c and the gate electrode 301 a of the driving transistor DT and a whole surface of the substrate 300 .
  • the interlayer dielectric film 312 includes first and second contact holes 313 a and 313 b exposing the second areas 303 ab positioned at the both sides of the first area 303 aa of the semiconductor layer 303 a of the driving transistor DT, respectively.
  • the interlayer dielectric film 312 includes third and fourth contact holes 313 c and 313 d exposing the second areas 303 bb positioned at both sides of the first area 303 ba of the semiconductor layer 303 b of the first transistor T 1 , respectively.
  • the interlayer dielectric film 312 includes fifth and sixth contact holes 313 e and 313 f exposing the first plate 302 c in an area adjacent to one of the second area 303 ab of the semiconductor layer 303 a of the driving transistor DT and one of the second area 303 bb of the semiconductor layer 303 b of the first transistor T 1 .
  • the driving voltage line 305 , the data line 306 and the like defining the pixel area P by intersecting with the gate line 301 b are formed on the interlayer dielectric film 312 including the first to sixth contact holes 313 a to 313 f.
  • the driving voltage line 305 connected to the second area 303 ab of the semiconductor layer 303 a of the driving transistor through the first contact hole 313 a is formed on the interlayer dielectric film 312 including the first to sixth contact holes 313 a to 313 f .
  • a portion of the driving voltage line, which is connected to the second area 303 ab of the semiconductor layer 303 a of the driving transistor DT through the first contact hole 313 a plays a role of the source electrode of the driving transistor DT.
  • the drain electrode 307 c of the driving transistor DT which is spaced apart from the driving voltage line 305 , connected to the second area 303 ab of the semiconductor layer 303 a of the driving transistor DT through the second contact hole 313 b , and connected to the first plate 302 c through the fifth contact hole 313 e is formed on the interlayer dielectric film 312 .
  • the source electrode 307 e of the first transistor T 1 which is connected to the first plate 302 c through the sixth contact hole 313 f and connected to the second area 303 bb of the semiconductor layer 303 c of the second transistor T 2 through the third contact hole 313 c is formed on the interlayer dielectric film 312 .
  • the drain electrode 307 a of the first transistor T 1 which is connected to the second area 303 bb of the oxide semiconductor layer 303 b through the fourth contact hole 313 d , and connected to the connection pattern CP of FIG. 3 through another contact hole, is formed on the interlayer dielectric film 312 .
  • the second plate 307 d forming the storage capacitor Cst by including the portion connected to the gate electrode 301 a of the driving transistor through the contact hole in a position corresponding to the first plate 302 c and the portion playing a role of the source electrode of the second transistor T 2 is formed on the interlayer dielectric film 312 . That is, the gate electrode 301 a of the driving transistor DT is connected to the second plate 307 d through the contact hole, and the second plate 307 d is connected to the second area 303 cd of the semiconductor layer 303 c through another contact hole.
  • the first plate 302 c and the second plate 307 d which are sequentially laminated in the pixel area, play a role of forming the storage capacitor Cst.
  • the semiconductor layer 303 a which is sequentially laminated in the pixel area, the gate electrode 301 a formed on the gate insulating film, the portion formed on the interlayer dielectric film 312 and playing a role of the source electrode of the driving voltage line 305 connected to the second area 303 ab of the oxide semiconductor layer 303 a through first and second contact holes 313 a and 313 b , and the drain electrode 307 c forms the driving transistor DT.
  • the oxide semiconductor layer 303 b which is sequentially laminated in the pixel area, the gate electrode 301 b formed on the gate insulating film, and the source electrode 307 e and the drain electrode 307 a formed on the interlayer dielectric film 312 and connected to the second area 303 bb of the oxide semiconductor layer 303 b through the third and fourth contact holes 313 c and 313 d form the first transistor T 1 .
  • a protection film 313 including an inorganic insulating material e.g., oxide silicon (SiO2) or nitride silicon (SiNx)
  • an organic insulating material e.g., benzocyclobutene or photoacryl
  • the protection film 313 includes a source contact hole 315 exposing the source electrode 307 e.
  • the pixel electrode 308 connected to the source electrode 307 e through the source contact hole 315 and extending up to a light emitting area is formed on the protection film 313 including the source contact hole 315 .
  • the pixel electrode 308 and the source electrode 307 e which are sequentially laminated in the pixel area are connected through the source contact hole 315 , and the first plate 302 c and the source electrode 307 e are connected through the source contact hole 315 .
  • the pixel electrode 308 and the first plate 302 c form the double storage capacitor Cst together with the second plate 307 d.
  • a planarization film 314 is formed on the protection film 313 .
  • the planarization film 314 is not formed between the pixel electrode 308 and the second plate 307 d in order to form the storage capacitor Cst.
  • a top gate in which the gate electrode 301 a is positioned over the semiconductor layer 303 b is described, but is an example for convenience of description.
  • a bottom gate in which the gate electrode 301 a is positioned under the semiconductor layer 303 b may be provided for the display panel 11 of the organic light emitting display device 10 according to the first embodiment.
  • the pixel structure may be changed in correspondence to the bottom gate.
  • semiconductor layers 303 a , 303 b and 303 c may be, for example, oxide semiconductors, are not limited thereto, and may be amorphous silicon, poly silicon that is obtained by crystallizing amorphous silicon, organic semiconductors (hereinafter, it is the same as above).
  • FIG. 6A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a second embodiment.
  • FIG. 6B is an enlarged view of a portion B in FIG. 6A , according to the second embodiment.
  • each pixel of the second embodiment which is connected to a driving voltage line DVL for providing a driving voltage EVDD and a data line DL analogous to the first embodiment, includes a 3T1C based scan structure in which a driving transistor DT, a first transistor T 1 , and a second transistor T 2 are formed on a substrate 600 .
  • Some pixels may not be directly connected to the driving voltage line DVL and a reference voltage line RVL, and may be connected to each of the driving voltage line DVL and the reference voltage line RVL through a connection pattern CP.
  • a semiconductor layer 603 a of each driving transistor DT, a semiconductor layer 603 b of each first transistor T 1 and a semiconductor layer 603 c of each second transistor T 2 are formed on the substrate 600 .
  • the driving transistor DT includes the semiconductor layer formed with an oxide semiconductor material, and is for driving an OLED.
  • the first transistor T 1 includes the semiconductor layer formed with an oxide semiconductor material, is controlled by a scan signal, and is connected between a first node of the driving transistor DT and the reference voltage line RVL.
  • the second transistor T 2 includes the semiconductor layer formed with an oxide semiconductor material, is controlled by the scan signal commonly provided through a gate line, and is connected between a second node of the driving transistor DT and data line DL.
  • a conductive characteristic of a portion of the semiconductor layer 603 a of the driving transistor DT is improved, the portion of the semiconductor layer 603 a of the driving transistor DT, of which the conductive characteristic is improved is connected to the driving voltage line DVL.
  • a conductive characteristic of a portion of the semiconductor layer 603 b of the first transistor T 1 is improved, the portion of the semiconductor layer 603 b of the first transistor T 1 , of which the conductive characteristic is improved is connected to the reference voltage line RVL.
  • the semiconductor layer 603 a of the driving transistor DT, the semiconductor layer 603 b of the first transistor T 1 , the semiconductor layer 603 c of the second transistor T 2 , and a first plate 607 d are simultaneously formed in the same layer.
  • the first plate 607 d connects the semiconductor layer 603 a of the driving transistor DT with the semiconductor layer 603 b of the first transistor T 1 , and is integrally formed.
  • the semiconductor layer 603 a of the driving transistor DT, the semiconductor layer 603 b of the first transistor T 1 , the semiconductor layer 603 c of the second transistor T 2 , and a first plate 602 c are formed with an oxide semiconductor material.
  • the first plate 602 c connects the semiconductor layer 603 a of the driving transistor DT with the semiconductor layer 603 b of the first transistor T 1 , and is integrally formed.
  • the oxide semiconductor material may be zinc-oxide series material, and may be zinc-oxide series material including indium.
  • the oxide semiconductor material may be Indium Gallium Zinc Oxide (IGZO), Zinc Tin Oxide (ZTO), Zinc Indium Oxide (ZIO), and the like.
  • a conductive characteristic of the oxide semiconductor material may be improved, when the oxide semiconductor material is exposed to a plasma or impurities are added to the oxide semiconductor material.
  • the semiconductor layer 603 a of each driving transistor DT is formed in correspondence to an area where a gate electrode 601 a of each driving transistor DT is formed.
  • the semiconductor layer 603 b of each first transistor T 1 is formed in correspondence to a portion playing a role of a gate electrode in a gate line 601 b of each first transistor T 1 .
  • the semiconductor layer 603 c of each second transistor T 2 is formed in correspondence to a portion playing a role of a gate electrode in a gate line 601 b of each second transistor T 2 .
  • the gate electrode 601 a of each driving transistor DT, the gate line 601 b for forming the gate electrodes of the first and second transistors T 1 and T 2 , a connection pattern 602 a connected to each driving voltage line DVL, and a connection pattern 602 b connected to each reference voltage line RVL are formed, on the substrate 600 on which the semiconductor layer 603 a of each driving transistor DT, the semiconductor layer 603 b of each first transistor T 1 and the semiconductor layer 603 c of each second transistor T 2 are formed.
  • the gate line 601 b is a common gate line for commonly applying the scan signal to the gate electrodes of the first and second transistors T 1 and T 2 included in each pixel, which are connected to the gate line 601 b.
  • signal lines such as the driving voltage line 605 and the data lines 606 corresponding each pixel row are formed on the substrate 600 .
  • the semiconductor layer 603 a of the driving transistor DT, the semiconductor layer 603 b of the first transistor T 1 , the semiconductor layer 603 c of the second transistor T 2 , and the first plate 602 c are conductive by a plasma process or impurities addition, except for a first area where the gate electrode 601 a and the gate line 601 b are covered.
  • a drain electrode 607 a of the first transistor T 1 which is connected to the connection pattern 602 b (i.e., the connection pattern of the reference voltage line) formed on the substrate 600 through a contact hole, a second plate 607 d playing a role of forming a storage capacitor Cst by including a portion connected to the gate electrode 601 a of the driving transistor DT of each pixel through a contact hole and a portion playing a role of a source electrode of the second transistor T 2 of each pixel, and the like are further formed.
  • the first plate 602 c connected to the semiconductor layer 603 a of the driving transistor DT, and a pixel electrode of the OLED connected to a pattern 607 e of the first transistor T 1 through a contact hole in each pixel are formed in each pixel.
  • the pixel electrode 608 is positioned on the first plate 602 c and the second plate 607 d and forms the storage capacitor.
  • a protection film 613 is formed on the substrate 600 including the second plate 607 d .
  • a planarization film 614 may be further formed. The planarization film 614 may not be formed in a portion of the storage capacitor Cst.
  • a pixel defining film (referred to as a bank) 609 which defines the pixel is formed.
  • An organic layer (not shown) including a light emitting layer corresponding to each pixel may be laminated on the pixel defining film 609 , and a common electrode for all pixels may be laminated on the organic layer.
  • a WOLED White Organic Light Emitting Diode
  • an organic layer including the same light emitting layer may be laminated and a color filter may be formed in a light emitting direction in all pixels.
  • FIG. 7 is a cross-sectional view taken along a cutting line III-III′ of FIG. 6A .
  • FIG. 8 is a cross-sectional view taken along a cutting line IV-IV′ of FIG. 6B .
  • a buffer layer 610 is formed on the substrate 600 .
  • the semiconductor layer 603 a of the driving transistor DT and the semiconductor layer 603 b of each first transistor T 1 are formed on the substrate 600 on which the buffer layer 610 is formed.
  • the semiconductor layer 603 c of the second transistor T 2 is formed on the substrate equally to the semiconductor layer 603 a of the driving transistor DT and the semiconductor layer 603 b of each first transistor T 1 .
  • the first plate 602 c connects the semiconductor layer 603 b of the first transistor T 1 with the semiconductor layer 603 c of the second transistor T 2 , and is integrally formed.
  • a gate insulating film 611 is formed on first areas 603 aa and 603 ba of the semiconductor layer 603 b of the first transistor T 1 and the semiconductor layer 603 c of the second transistor T 2 . At this time, the gate insulating film 611 is formed in correspondence to a first area of the semiconductor layer 603 c.
  • the gate line 601 b having a plane form equal to that of the gate insulating film 611 and extending in a direction on the gate insulating film 611 formed on the substrate 600 is formed.
  • the gate line 601 b formed on a first area 603 ab plays a role of the gate electrode of the first transistor T 1 .
  • the gate line 601 b extends in a direction on the gate insulating film 611 which is formed in correspondence to the first area of the semiconductor layer 603 c .
  • the gate line 601 b extending in correspondence to the first area of the semiconductor layer 603 c plays a role of the gate electrode of the second transistor T 2 .
  • the semiconductor layer 603 b of the first transistor T 1 , the semiconductor layer 603 c of the second transistor T 2 and the first plate 602 c may be formed with oxide semiconductor material, and may be conductive by a plasma process or impurities addition.
  • Each of the semiconductor layers 603 a and 603 b includes first areas 603 aa and 603 ba where a plasma is not processed in central areas thereof, and second areas 603 ab and 603 bb , which are conductive and positioned at both sides of the first areas 603 aa and 603 ba .
  • the first plate 602 c is also conductive.
  • the semiconductor layer 603 c of the second transistor T 2 includes a first area where a plasma is not processed in a central area thereof, and second areas, which are conductive by a plasma process and positioned at both sides of the first area.
  • An interlayer dielectric film 612 including an inorganic insulating material (e.g., oxide silicon (SiO2) or nitride silicon (SiNx)) or an organic insulating material is formed on the gate line 601 b , the first plate 602 c and the gate electrode 601 a of the driving transistor DT and a whole surface of the substrate 600 .
  • an inorganic insulating material e.g., oxide silicon (SiO2) or nitride silicon (SiNx)
  • an organic insulating material is formed on the gate line 601 b , the first plate 602 c and the gate electrode 601 a of the driving transistor DT and a whole surface of the substrate 600 .
  • the interlayer dielectric 612 includes a first contact hole 613 a exposing the second area 603 ab of the semiconductor layer 603 a of the driving transistor DT, a fourth contact hole exposing the second area 603 bb of the first transistor T 1 , and a sixth contact hole 613 f exposing the first plate 602 c in a position adjacent to the first transistor T 1 .
  • the semiconductor layer 603 b of the first transistor T 1 , the semiconductor layer 603 c of the second transistor T 2 and the first plate 602 c are integrally formed (e.g., directly connected or physically unified) in the second embodiment.
  • the contact holes 313 b , 313 c and 313 e that were provided in the first embodiment (see FIG. 4 ) in order to electrically connect the first plate 302 c with the gate electrode 301 a of the driving transistor and the first transistor T 1 such contact holes are omitted in this second embodiment. Consequently, since some contact holes (such as 313 b , 313 c , and 313 e of FIG. 4 ) are omitted in the second embodiment, an opening ratio of a light emitting area of an organic light emitting device can be increased.
  • a driving voltage line 605 connected to the second area 603 ab of the oxide semiconductor layer 603 a through the first contact hole 613 a of the driving transistor DT is formed on the interlayer dielectric film 612 .
  • a portion of the driving voltage line 605 , which is connected to the second area 603 ab of the semiconductor layer 603 a of the driving transistor DT through the first contact hole 613 a plays a role of the source electrode of the driving transistor DT.
  • a drain electrode 607 a of the driving transistor DT which is connected to the second area 603 bb of the semiconductor layer 603 b of the first transistor T 1 through the fourth contact hole 613 d and connected to the connection pattern CP of FIG. 6 is formed on the interlayer dielectric film 612 .
  • the pattern 607 e formed with source/drain electrode material is formed on the interlayer dielectric film 612 .
  • the pattern 607 e connects the first plate 602 c with the pixel electrode 608 .
  • the second plate 607 d forming the storage capacitor Cst by including the portion connected to the gate electrode 601 a of the driving transistor through the contact hole in a position corresponding to the first plate 602 c and the portion playing a role of the source electrode of the second transistor T 2 is formed on the interlayer dielectric film 612 . That is, the gate electrode 601 a of the driving transistor DT is connected to the second plate 607 d through the contact hole, and the second plate 607 d is connected to the second area 603 of the semiconductor layer 603 c of the second transistor T 2 through another contact hole.
  • a protection film 613 including an inorganic insulating material e.g., oxide silicon (SiO2) or nitride silicon (SiNx)
  • an organic insulating material e.g., benzocyclobutene or photoacryl
  • the protection film 613 includes a source contact hole 615 exposing the pattern 607 e.
  • the pixel electrode 608 connected to the pattern 607 e through the source contact hole 615 and extending up to a light emitting area is formed on the protection film 613 including the source contact hole 615 .
  • the pixel electrode 608 may be an anode electrode.
  • the pixel electrode 608 and the pattern 607 e which are sequentially laminated in a pixel area are connected through the source contact hole 615 , and the first plate 602 c and the source electrode 607 e are connected through the source contact hole 615 .
  • the pixel electrode 608 and the first plate 602 c form the double storage capacitor Cst together with the second plate 607 d.
  • FIG. 9A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a third embodiment.
  • FIG. 9B is an enlarged view of a portion C in FIG. 9A , according to the third embodiment.
  • the third embodiment is analogous to the second embodiment except a pixel electrode 908 is formed a little larger than that of the second embodiment and some planarization film 914 is not formed between the pixel electrode 908 and a second plate 907 d and thus repetitive explanation will be omitted.
  • each pixel connected to a driving voltage line DVL for providing a driving voltage EVDD and a data line DL equally to the second embodiment includes a 3T1C based scan structure in which a driving transistor DT, a first transistor T 1 and a second transistor T 2 are formed on a substrate 900 .
  • some pixels may be connected to each of the driving voltage line DVL and a reference voltage line RVL through a connection pattern.
  • various signal lines such as a driving voltage line 905 and data lines 906 corresponding to each pixel row, are formed on the substrate 900 .
  • the semiconductor layer 903 a of the driving transistor DT, the semiconductor layer 903 b of the first transistor T 1 and the first plate 902 c are integrally formed analogously to the second embodiment.
  • the gate electrode 901 a of each driving transistor DT, the gate line 901 b for forming the gate electrodes of the first and second transistors T 1 and T 2 , a connection pattern 902 a connected to each driving voltage line DVL, and a connection pattern 902 b connected to each reference voltage line RVL are formed, on the substrate 900 on which the semiconductor layer 903 a of each driving transistor DT, the semiconductor layer 903 b of each first transistor T 1 and the semiconductor layer 903 c of each second transistor T 2 are formed.
  • the gate line 901 b is a common gate line for commonly applying the scan signal to the gate electrodes of the first and second transistors T 1 and T 2 included in each pixel, which are connected to the gate line 901 b.
  • the first plate 902 c connects the driving transistor DT and the first transistor, is formed with an oxide semiconductor material, and is conductive.
  • the first plate 902 c and the second plate 907 d are formed, and an interlayer dielectric film 912 is between the first plate 902 c and the second plate 907 d .
  • the second plate 907 d and the pixel electrode 908 are formed, and a protection film 913 is between the the second plate 907 d and the pixel electrode 908 .
  • a planarization film 914 is further formed between the protection film 913 and the pixel electrode 902 .
  • the planarization film 914 is not formed in an area corresponding to the second plate 907 d in order to increase a capacitance of a double storage capacitor Cst.
  • the planarization film 914 covers a portion of the second plate 907 d except for a portion of the driving transistor DT of the voltage pixel electrode 908 , and thus the capacitance of the storage capacitor can be maximized.
  • the planarization film 914 is formed on the driving voltage line VDL too, and thus a defect between wires can be prevented.
  • FIG. 10 is a cross-sectional view taken along a cutting line V-V′ of FIG. 9B .
  • the semiconductor layer 903 c of the second transistor T 2 is formed on a buffer layer 910 of the substrate 900 .
  • the interlayer dielectric 912 includes a seventh contact hole 913 h exposing a portion of the semiconductor layer 903 c of the second transistor T 2 , and is formed on the second transistor T 2 .
  • the second plate 907 d is connected to the semiconductor layer 903 c of the second transistor T 2 through the seventh contact hole 913 h , and is connected to the gate electrode 901 a of the driving transistor DT through another contact hole.
  • the protection film 913 is formed on the substrate 900 on which the second plate 907 d is formed.
  • the planarization film 914 is formed in a portion corresponding to the second plate 907 d on the protection film 913 .
  • the pixel electrode 908 corresponding to the second plate 907 d is formed on the substrate 900 .
  • the pixel electrode 908 corresponds to the second plate 907 d , and plays a role of the storage capacitor.
  • the organic light emitting display device includes the double storage capacitor Cst including the first plate 902 c , the second plate 907 d and the pixel electrode 908 .
  • the planarization film 914 is not formed on the second contact hole 913 h . Therefore, a short between the second plate 907 d and the pixel electrode 908 formed in correspondence to the seventh contact hole 913 h may occur due to a step difference according to the seventh contact hole 913 h , and a fourth embodiment will be described as a method of enhancing this.
  • FIG. 11A is a plan view schematically illustrating a portion of a display panel of an organic light emitting display device according to a fourth embodiment.
  • FIG. 11B is an enlarged view of a portion D in FIG. 11A , according to the fourth embodiment.
  • the fourth embodiment is substantially the same as the third embodiment except for a planarization film 1114 formed between a pixel electrode 1108 and a second plate 1107 d positioned on a seventh contact hole 1117 h of a second transistor T 2 .
  • a 3T1C based 1 scan structure in which a driving transistor DT, a first transistor T 1 and the second transistor T 2 are formed is formed on a substrate 1100 .
  • the driving transistor DT, the first transistor T 1 and the second transistor T 2 are connected to a driving voltage line DVL and a data line DL equally to the third embodiment.
  • some pixels may not be directly connected to the driving voltage line DVL and a reference voltage line RVL, and may be connected to each of the driving voltage line DVL and the reference voltage line RVL through a connection pattern CP.
  • various signal lines such as a driving voltage line 1105 and data lines 1106 corresponding to each pixel row are formed on the substrate 1100 .
  • the semiconductor layer 1103 a of the driving transistor DT, the semiconductor layer 1103 b of the first transistor T 1 and the first plate 1102 c are integrally formed equally to the second embodiment.
  • a gate electrode 1101 a of each driving transistor DT, a gate line 1101 b for forming gate electrodes of the first and second transistors T 1 and T 2 , a connection pattern 1102 a connected to each driving voltage line DVL, and a connection pattern 1102 b connected to each reference voltage line RVL are formed, on the substrate 1100 on which the semiconductor layer 1103 a of each driving transistor DT, the semiconductor layer 1103 b of each first transistor T 1 and the semiconductor layer 1103 c of each second transistor T 2 are formed.
  • the gate line 1101 b is a common gate line for commonly applying the scan signal to the gate electrodes of the first and second transistors T 1 and T 2 included in each pixel, which are connected to the gate line 1101 b.
  • the first plate 1102 c connects the driving transistor DT and the first transistor, is formed with an oxide semiconductor material, and is conductive.
  • the first plate 1102 c and the second plate 1107 d are formed, and an interlayer dielectric film 1112 is between the first plate 1102 c and the second plate 1107 d .
  • the second plate 1107 d and a pixel electrode 1108 are formed, and a protection film 1113 is between the second plate 1107 d and the pixel electrode 1108 .
  • a planarization film 1114 is further formed between the protection film 1113 and the pixel electrode 1108 .
  • the planarization film 1114 is not formed in an area corresponding to the second plate 1107 d in order to increase a capacitance of a double storage capacitor.
  • the planarization film 1114 covers a portion of the second plate 1107 d except for a portion of the driving transistor DT of the pixel electrode 1108 , and thus a short between the second plate 1107 d and the pixel electrode 1108 can be prevented.
  • the planarization film 1114 is not formed on the portion of the first plate 1102 c , the portion of the second plate 1107 d and the portion of the pixel electrode 1108 which are overlapped.
  • the second plate 1107 d is connected to the semiconductor layer 1103 c of the second transistor T 2 through a contact hole 1113 h .
  • the planarization film 1114 is formed on the second plate 1107 d corresponding to the contact hole 1113 h . Therefore, a short between the pixel electrode 1108 and the second plate 1107 d due to a step difference according to a contact hole can be prevented.
  • FIG. 12 is a cross-sectional view taken along a cutting line VI-VI′ of FIG. 11B .
  • a buffer layer 1110 is formed on the substrate 1100 .
  • the semiconductor layer 1103 c of the second transistor T 2 is formed on the buffer layer 1110 .
  • the interlayer dielectric film 1112 includes the seventh contact hole 1113 h exposing a portion of the semiconductor layer 1103 c of the second transistor T 2 , and is formed on the second transistor T 2 .
  • the second plate 1107 d is connected to the semiconductor layer 1103 c of the second transistor T 2 through the seventh contact hole 1113 h , and is connected to the gate electrode 1101 a of the driving transistor DT through another contact hole.
  • the protection film 1113 is formed on the substrate 1100 on which the second plate 1107 d is formed.
  • the planarization film 1114 is formed in a portion corresponding to the second plate 1107 d on the protection film 1113 .
  • the pixel electrode 1108 corresponding to the second plate 1107 d is formed on the substrate 1100 .
  • the planarization film 1114 is formed on a portion where the second transistor 1103 c and the second plate 1107 d are connected through the seventh contact hole 1113 h , and thus a short between the pixel electrode 1108 and the second plate 1107 d due to the seventh contact hole 1113 h can be prevented.

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US20150137099A1 (en) 2015-05-21
TW201521002A (zh) 2015-06-01

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