US9171986B2 - Semiconductor photo-detecting device - Google Patents

Semiconductor photo-detecting device Download PDF

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US9171986B2
US9171986B2 US14/496,998 US201414496998A US9171986B2 US 9171986 B2 US9171986 B2 US 9171986B2 US 201414496998 A US201414496998 A US 201414496998A US 9171986 B2 US9171986 B2 US 9171986B2
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layer
photo
detecting device
nitride
low
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US20150084061A1 (en
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Ki Yon Park
Hwa Mok Kim
Kyu Ho Lee
Sung Hyun Lee
Hyung Kyu Kim
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Assigned to SEOUL VIOSYS CO., LTD. reassignment SEOUL VIOSYS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, HWA MOK, LEE, KYU HO, LEE, SUNG HYUN, PARK, KI YON
Priority to US14/584,732 priority Critical patent/US9356167B2/en
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Priority to US14/922,946 priority patent/US9478690B2/en
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Priority to US15/168,159 priority patent/US9786805B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Exemplary embodiments relate to a semiconductor photo-detecting device. More particularly, exemplary embodiments relate to a semiconductor photo-detecting device with excellent detection efficiency for a specific wavelength of light.
  • Semiconductor photo-detecting devices operate on the principle that current is induced by illuminated light.
  • semiconductor photo-detecting devices for detecting ultraviolet (UV) light may be used in a variety of fields, such as business, medical science, defense industry, communications, etc.
  • the semiconductor photo-detecting devices are based on the principle that a depletion region is formed by the separation of electrons and holes within a semiconductor upon absorption of photons, and current is, thus, induced depending upon a flow of the electrons.
  • Semiconductor photo-detecting devices using silicon have been typically used in the art.
  • the semiconductor photo-detecting devices may require high voltage for operation and have low detection efficiency.
  • photo-detection efficiency may decrease due to the silicon being sensitive not only to UV light but also to visible and infrared light.
  • UV light detecting devices using silicon may be thermally and chemically unstable.
  • Photo-detecting devices using nitride-based semiconductors have been developed.
  • Photo-detecting devices using nitride-based semiconductors may have relatively high responsivity, high reaction rate, low noise level, and high thermal and chemical stability compared with photo-detecting devices using silicon.
  • Photo-detecting devices using AlGaN, among nitride-based semiconductors, as a light absorption layer may show improved characteristics as a UV light detecting device.
  • Nitride-based semiconductor photo-detecting devices may be manufactured in a variety of structures, such as, photoconductors, Schottky junction photo-detecting devices, p-i-n photo-detecting devices, and the like.
  • Schottky junction photo-detecting devices may include a substrate, a buffer layer on the substrate, a light absorption layer on the buffer layer, and a Schottky junction layer on the light-absorption layer. Further, a first electrode and a second electrode may be arranged on the Schottky junction layer and the buffer layer or the light-absorption layer, respectively.
  • the light absorption layer may be formed of a nitride-based semiconductor having band gap energy capable of absorbing UV light. Accordingly, AlGaN may be used as a semiconductor substance in the light-absorption layer. A GaN layer may be used as the buffer layer.
  • an AlN layer may be interposed between the GaN buffer layer and the AlGaN light absorption layer. Even in this case, photo-detection response may be reduced due to high energy band gap and insulation characteristics of the AlN layer.
  • the thickness of the AlN layer is less than about 100 ⁇ , photo-detection characteristics may be improved but it may be difficult to completely prevent cracks, and when the thickness of the AlN layer exceeds about 100 ⁇ , cracks may be prevented, but photo-detection characteristics may be deteriorated.
  • GaN, InGaN, and AlGaN layers used as a light absorption layer in typical nitride-based semiconductor photo-detecting devices may have intrinsic defects and allow current flow in the devices in response to visible light, but not UV light due to such defects.
  • characteristics of the semiconductor photo-detecting device a low UV-to-visible rejection ratio of about 10 3 has been measured. That is, the typical semiconductor photo-detecting devices may allow low current flow in response to visible light but not UV light, thereby, deteriorating detection accuracy.
  • Exemplary embodiments provide a photo-detecting device having high photo-detection efficiency for light in a specific wavelength range, such as, a UV light wavelength range.
  • Exemplary embodiments of provide a photo-detecting device including a light absorption layer with improved crystallinity and having high photo-detection efficiency for, for instance, UV light.
  • a photo-detecting device includes: a first nitride layer; a low-current blocking layer disposed on the first nitride layer, the low-current blocking layer including a multilayer structure; a light absorption layer disposed on the low-current blocking layer; and a Schottky junction layer disposed on the light absorption layer.
  • a method of manufacturing a photo-detecting device includes: forming a first nitride layer; forming a low-current blocking layer including a multilayer structure on the first nitride layer; forming a light absorption layer on the low-current blocking layer; and forming a Schottky junction layer on the light absorption layer, wherein the low-current blocking layer is formed at a lower temperature than the light absorption layer.
  • exemplary embodiments provide a photo-detecting device with relatively low responsivity to visible light by including a low-current blocking layer. Accordingly, the photo-detecting device may have an improved UV-to-visible rejection ratio and achieve improved photo-detection efficiency and reliability.
  • exemplary embodiments provide a photo-detecting device that includes a light absorption layer having improved crystallinity and may reduce a micro-current induced by reaction to visible light.
  • FIGS. 1 and 2 are, respectively, a sectional view and a top view of a photo-detecting device, according to exemplary embodiments.
  • FIGS. 3 , 4 , 5 , 6 , 7 , and 8 are sectional views of a photo-detecting device at various stages of manufacture, a photo-detecting device according to exemplary embodiments.
  • FIG. 9 is a graph comparing characteristics of a photo-detecting device, according to exemplary embodiments.
  • an element or layer When an element or layer is referred to as being “on,” “connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present. When, however, an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.
  • “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ.
  • Like numbers refer to like elements throughout.
  • the term “and/or” includes any and all combinations of one or more of the associated listed items.
  • first, second, etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, and/or section from another element, component, region, layer, and/or section. Thus, a first element, component, region, layer, and/or section discussed below could be termed a second element, component, region, layer, and/or section without departing from the teachings of the present disclosure.
  • Spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” and the like, may be used herein for descriptive purposes, and, thereby, to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the drawings.
  • Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features.
  • the exemplary term “below” can encompass both an orientation of above and below.
  • the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.
  • exemplary embodiments are described herein with reference to sectional illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
  • a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
  • the regions illustrated in the drawings are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to be limiting.
  • composition ratios for semiconductor layers disclosed hereinafter, and the following descriptions do not limit the inventive concept disclosed herein.
  • semiconductor layers disclosed hereinafter may be grown by various methods generally well-known to those skilled in the art, such as Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • MBE Molecular Beam Epitaxy
  • HVPE Hydride Vapor Phase Epitaxy
  • semiconductor layers are grown in the same chamber by MOCVD, and sources known to those skilled in the art according to composition ratios may be used as sources introduced into the chamber.
  • sources known to those skilled in the art according to composition ratios may be used as sources introduced into the chamber.
  • the present invention is not limited thereto.
  • FIGS. 1 and 2 are, respectively, a sectional view and a top view of a photo-detecting device, according to exemplary embodiments.
  • a photo-detecting device includes a substrate 110 , a first nitride layer 130 , a low-current blocking layer 140 , a light absorption layer 150 , and a junction layer (e.g., Schottky junction layer) 160 .
  • the photo-detecting device may further include a second nitride layer 120 , a first electrode 171 , and a second electrode 173 .
  • the photo-detecting device may embody many forms and include multiple and/or alternative components.
  • the substrate 110 is disposed at a lower side of the photo-detecting device, and any substrate enabling growth of semiconductor layers thereon may be used as the substrate 110 .
  • the substrate 110 may include at least one of sapphire, SiC, ZnO, and a nitride-based substrate, such as GaN and AlN.
  • the substrate 110 may include sapphire.
  • the first nitride layer 130 may be disposed on the substrate 110 .
  • the first nitride layer 130 may include a nitride-based semiconductor layer, for example, a GaN layer.
  • the first nitride layer 130 may be doped with impurities, such as Si, to have n-type properties, or may be undoped.
  • a nitride-based semiconductor may have characteristics of an n-type semiconductor even in an undoped state, and thus, doping of the nitride-based semiconductor may be determined as needed.
  • a doping concentration of Si may be 1 ⁇ 10 8 or less.
  • the first nitride layer 130 may have a thickness of about 2 ⁇ m.
  • the second nitride layer 120 may be disposed between the first nitride layer 130 and the substrate 110 .
  • the second nitride layer 120 may contain a substance similar to that of the first nitride layer 130 , and, for example, may include GaN.
  • the second nitride layer 120 may have a thickness of about 25 nm and may be grown at a lower temperature (for example, from 500° C. to 600° C.) than the first nitride layer 130 .
  • the second nitride layer 120 may serve to enhance crystallinity of the first nitride layer 130 , whereby optical and electrical characteristics of the first nitride layer 130 may be improved by virtue of the second nitride layer 120 .
  • the substrate 110 is a heterogeneous substrate, such as a sapphire substrate
  • the second nitride layer 120 may also serve as a seed layer on which the first nitride layer 130 may be grown.
  • the low-current blocking layer 140 is disposed on the first nitride layer 130 and may have a multilayer structure.
  • the multilayer structure of the low-current blocking layer 140 may include at least one of binary, ternary, and quaternary nitride semiconductor layers including (Al, In, Ga)N. Also, at least two nitride layers of the multilayer structure of the low-current blocking layer 140 may have different composition ratios than one another (or than at least one of the other layers of the multilayer structure).
  • Each of the nitride layers may have a thickness of 5 nm to 10 nm, e.g., 6 nm to 9 nm, such as 7 nm to 8 nm.
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which three to ten pairs of nitride layers having different composition ratios are stacked.
  • Nitride semiconductor layers included in the multilayer structure of the low-current blocking layer 140 may be determined depending upon compositions of nitride layers in the light absorption layer 150 .
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which AlN/AlGaN layers and/or AlGaN/AlGaN layers are repetitively stacked.
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which InGaN/InGaN layers, GaN/InGaN layers, and/or AlInGaN/AlInGaN layers are repetitively stacked, and when the light absorption layer 150 includes a GaN layer, the multilayer structure of the low-current blocking layer 140 may have a structure in which GaN/InGaN layers, InGaN/InGaN layers, and/or GaN/GaN layers are repetitively stacked.
  • Each of the nitride layers included in the low-current blocking layer 140 may have a different composition ratio by growing the nitride layers at different pressures.
  • the Al x Ga (1-x) N layer may be grown at a pressure of about 100 Torr and the Al y Ga (1-y) N layer may be grown at a pressure of about 400 Torr.
  • the Al x Ga (1-x) N layer grown at a lower pressure may have a higher Al ratio than the Al y Ga (1-y) N layer grown at a higher pressure. It is contemplated, however, than any other suitable method may be utilized to control the various composition ratios of the various nitride layers.
  • the nitride layers grown at different pressures may have different growth rates. As the nitride layers are grown at the different growth rates, it is possible to reduce propagation of dislocation or to change a propagation path of dislocation in the process of growth, thereby reducing dislocation concentration in other semiconductor layers to be grown in subsequent processes. Also, different composition ratios of the repetitively stacked layers may relieve stress caused by lattice mismatch, thereby enhancing crystallinity of the other semiconductor layers to be grown in the subsequent processes, and preventing damage such as cracks and the like.
  • the low-current blocking layer 140 including the multilayer structure may be formed under the light absorption layer 150 , the light absorption layer 150 may have enhanced crystallinity with reduced cracks therein. When the light absorption layer 150 has improved crystallinity, quantum efficiency of the photo-detecting device may be improved.
  • the low-current blocking layer 140 may have a higher defect concentration than the light absorption layer 150 . This may be obtained by growing the low-current blocking layer 140 at a lower temperature than the light absorption layer 150 .
  • the light absorption layer 150 may be grown at a temperature of about 1050° C. and the low-current blocking layer 140 may be grown at a lower temperature than the light absorption layer 150 by 30° C. to 200° C., e.g., 70° C. to 160° C., such as 100° C. to 130° C.
  • the low-current blocking layer 140 When the low-current blocking layer 140 is grown at a lower temperature than the light absorption layer 150 by more than 200° C., crystallinity of the light absorption layer 150 formed on the low-current blocking layer 140 may be rapidly degraded, thereby decreasing quantum efficiency of the light absorption layer 150 . Thus, the low-current blocking layer 140 may be grown at a lower temperature than the light absorption layer 150 by 30° C. to 200° C. When the low-current blocking layer 140 is grown at a lower temperature than the light absorption layer 150 , the low-current blocking layer 140 may have a relatively higher concentration of defects, such as dislocation and vacancy, than the light absorption layer 150 . Low-current blocking of the low-current blocking layer 140 will be described below in detail.
  • the light absorption layer 150 may be disposed on the low-current blocking layer 140 .
  • the light absorption layer 150 may include a nitride semiconductor layer, including at least one of, but not limited to, a GaN layer, an InGaN layer, an AlInGaN layer, and an AlGaN layer. Since an energy band gap of the nitride semiconductor layer is determined depending upon the type of Group III element utilized, a substance for a nitride semiconductor of the light absorption layer 150 may be determined depending on the wavelength(s) of light to be detected by the photo-detecting device. For example, a photo-detecting device for detecting UV light in the UVA band may include the light absorption layer 150 including a GaN layer or an InGaN layer.
  • a photo-detecting device for detecting UV light in the UVB band may include the light absorption layer 150 including an AlGaN layer having an Al ratio of 28% or less
  • a photo-detecting device for detecting UV light in the UVC band may include the light absorption layer 150 including an AlGaN layer having an Al ratio of 28% to 50%, e.g., 33% to 45%, such as 38% to 40%.
  • the present invention is not limited thereto.
  • the light absorption layer 150 may have a thickness of about 0.1 ⁇ m to about 0.5 ⁇ m, and may be formed to a thickness of 0.1 ⁇ m or more to improve photo-detection efficiency.
  • the light absorption layer 150 may suffer from cracking when the light absorption layer 150 including an AlGaN layer having an Al ratio of 15% is formed to a thickness of 0.1 ⁇ m or more. As such, device manufacturing yield and photo-detection efficiency may be reduced from a thin thickness of 0.1 ⁇ m or less of the light absorption layer 150 .
  • the light absorption layer 150 may be formed on the low-current blocking layer 140 including the multilayer structure, such that cracks may be reduced in the light absorption layer 150 . In this manner, thereby the light absorption layer 150 may be manufactured to have a thickness of 0.1 ⁇ m or more. Accordingly, the photo-detecting device according to the exemplary embodiments may have improved photo-detection efficiency.
  • the Schottky junction layer 160 may disposed on the light absorption layer 150 .
  • the Schottky junction layer 160 and the light absorption layer 150 may make Schottky-contact with each other, and the Schottky junction layer 160 may include at least one of indium tin oxide (ITO), Ni, Co, Pt, W, Ti, Pd, Ru, Cr, and Au.
  • ITO indium tin oxide
  • the thickness of the Schottky junction layer 160 may be adjusted in terms of light transmittance and Schottky characteristics, and may be, for example, 10 nm or less.
  • the photo-detecting device may further include a cap layer (not shown) between the Schottky junction layer 160 and the light absorption layer 150 .
  • the cap layer may be a p-type-doped nitride semiconductor layer containing one or more impurities, such as Mg.
  • the cap layer may have a thickness of 100 nm or less, e.g., 5 nm or less. The cap layer may improve Schottky characteristics of the device.
  • the photo-detecting device may include an exposed region of the first nitride layer 130 that may be formed by partially removing the light absorption layer 150 and the low-current blocking layer 140 .
  • the second electrode 173 may be disposed on the exposed region of the first nitride layer 130
  • the first electrode 171 may be disposed on the Schottky junction layer 160 .
  • the first electrode 171 may be a metal electrode including multiple layers, and may be formed from any suitable material.
  • the first electrode 171 may include at least one of a Ni layer and an Au layer stacked.
  • the second electrode 173 may form ohmic-contact with the first nitride layer 130 and may include multiple metal layers formed from any suitable material.
  • the second electrode 173 may include at least one of a Cr layer, a Ni layer, and an Au layer stacked. It is contemplated, however, that any other suitable formations may be utilized in association with exemplary embodiments described herein.
  • the photo-detecting device With an external power source connected to the first electrode 171 and the second electrode 173 of the photo-detecting device, the photo-detecting device may be prepared in a state in which voltage is not applied thereto or backward voltage is applied thereto.
  • the light absorption layer 150 absorbs the light.
  • the Schottky junction layer 160 is formed on the light absorption layer 150 , an electron-hole separation region, namely, a depletion region is formed at an interface therebetween. Electrons created by the radiated light may induce a current and a photo-detecting function may be performed by measuring the induced current.
  • the photo-detecting device when the photo-detecting device is a UV light detecting device, an ideal UV light detecting device has an infinite UV-to-visible rejection ratio.
  • a conventional UV light detecting device a light absorption layer responds also to visible light due to defects in the light-absorption layer and generates electric current.
  • the conventional photo-detecting device may have a UV-to-visible rejection ratio of 10 3 or less, thereby causing an error in the optical measurement.
  • the low-current blocking layer 140 captures electrons created by visible light in the light absorption layer 150 to decrease the error from the device driven by the visible light.
  • the low-current blocking layer 140 is grown at a lower temperature than the light absorption layer 150 to have a higher defect concentration. Electrons created by visible light are much fewer than electrons created by UV light, thereby the movement of the electrons created by visible light may be captured by defects present in the low-current blocking layer 140 . That is, the low-current blocking layer 140 has such a higher defect concentration than the light absorption layer 150 , thereby capturing movement of the electrons created by the visible light.
  • the photo-detecting device of exemplary embodiments may have a higher UV-to-visible rejection ratio than the conventional UV light detecting device due to low responsivity to visible light.
  • the photo-detecting device according to exemplary embodiments may have a UV-to-visible rejection ratio of 10 4 or more. Therefore, the device may provide a photo-detecting device with high detection efficiency and reliability.
  • FIGS. 3 , 4 , 5 , 6 , 7 , and 8 are sectional views of a photo-detecting device at various stages of manufacture, according to exemplary embodiments. Duplicative descriptions of the same components as those described with reference to FIGS. 1 and 2 will be omitted.
  • a second nitride layer 120 may be formed on a substrate 110 .
  • the second nitride layer 120 may include a nitride semiconductor and may be grown by MOCVD.
  • the second nitride layer 120 may be grown by injecting a Ga source and a N source into a chamber at 550° C. and 100 Torr.
  • the second nitride layer 120 may include a GaN layer grown at low temperature.
  • the second nitride layer 120 may be grown to a thickness of about 25 nm.
  • the second nitride layer 120 grown to a small thickness at low temperature can provide improved crystallinity and optical and electrical characteristics to a first nitride layer 130 in the subsequent process.
  • the first nitride layer 130 is formed on the second nitride layer 120 by MOCVD.
  • the first nitride layer 130 may include a nitride semiconductor and may be grown by MOCVD.
  • the first nitride layer 130 may be grown by injecting Ga source and N source into the chamber at 1050° C. and 100 Torr. In this manner, the first nitride layer 130 may include a GaN layer grown at high temperature.
  • the first nitride layer 130 may include an n-type-doped GaN layer obtained by injecting an additional Si source into the chamber during growth of the first nitride layer 130 , or may include an undoped GaN layer.
  • the first nitride layer 130 may be grown with a thickness of about 2 ⁇ m.
  • a low-current blocking layer 140 is formed on the first nitride layer 130 .
  • the low-current blocking layer 140 may include a multilayer structure.
  • the multilayer structure may be formed by repetitively stacking at least one of binary, ternary, and quaternary nitride layers including (Al, In, Ga)N.
  • the multilayer structure of the low-current blocking layer 140 may include at least two nitride layers having different composition ratios.
  • the nitride layers included in the multilayer structure of the low-current blocking layer 140 may be determined depending upon compositions of a nitride layer to be included in a light absorption layer 150 .
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which AlN/AlGaN layers and/or AlGaN/AlGaN layers are repetitively stacked.
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which InGaN/InGaN layers, GaN/InGaN layers, and/or AlInGaN/AlInGaN layers are repetitively stacked.
  • the multilayer structure of the low-current blocking layer 140 may have a structure in which GaN/InGaN layers, InGaN/InGaN layers, and/or GaN/GaN layers are repetitively stacked.
  • the multilayer structure of the low-current blocking layer 140 may be formed by stacking three to ten pairs of nitride layers, and the low-current blocking layer 140 may be formed to have a thickness of 10 nm to 100 nm.
  • Each of the at least two nitride layers having different composition ratios may be grown to a thickness of 5 nm to 10 nm, and may be grown to have a different composition ratio by regulating an inflow rate of a source. It is also contemplated that the at least two nitride layers having different composition ratios may be formed by stacking nitride layers at different pressures of the chamber while preserving other growth conditions (e.g. growth temperature) including the inflow rates of the sources.
  • growth conditions e.g. growth temperature
  • the Al x Ga (1-x) N layer may be grown at a pressure of about 100 Torr and the Al y Ga (1-y) N layer may be grown at a pressure of about 400 Torr.
  • the Al x Ga (1-x) N layer grown at a lower pressure may have a higher Al ratio than the Al y Ga (1-x) N layer grown at a higher pressure.
  • the low-current blocking layer 140 including the multilayer structure grown at different pressures as described above may prevent (or otherwise reduce) the creation and propagation of dislocations during the growth process, thereby improving the crystallinity of the light absorption layer 150 formed on the low-current blocking layer 140 . Furthermore, since the nitride layers grown at different pressures having different composition ratios are repetitively stacked, the stress caused, at least in part, by lattice mismatch may be decreased, thereby also reducing the generation of cracks in the light absorption layer 150 . Moreover, since the nitride layers are grown by changing only the pressure while preserving the inflow rate of the source, it may be relatively easy to form the low-current blocking layer 140 .
  • the multilayer structure of the low-current blocking layer 140 may be grown at a temperature between 850° C. and 1020° C.
  • the growth temperature of the multilayer structure of the low-current blocking layer 140 may be 30° C. to 200° C. lower than that of the light absorption layer 150 , and, therefore, the low-current blocking layer 140 can have a higher defect concentration than that of the light absorption layer 150 . Accordingly, the low-current blocking layer 140 may capture the flow of electrons created by a reaction of the light absorption layer 150 to visible light.
  • the light absorption layer 150 is formed on the low-current blocking layer 140 .
  • the light absorption layer 150 may include a nitride semiconductor and may be grown by selectively applying elements and compositions of the nitride semiconductor depending upon a wavelength of light to be detected by the photo-detecting device.
  • the light absorption layer 150 including a GaN layer or an InGaN layer may be grown for a photo-detecting device configured to detect UV light in the UVA band.
  • the light absorption layer 150 including an AlGaN layer having an Al ratio of 28% or less may be grown for a photo-detecting device configured to detect UV light in the UVB band.
  • the light absorption layer 150 including an AlGaN layer having an Al ratio of 28% to 50% may be grown for a photo-detecting device configured to detect UV light in the UVC band. It is contemplated, however, that exemplary embodiments are not limited thereto.
  • the light absorption layer 150 may be grown to a thickness of 0.1 ⁇ m or more, and thus the manufactured photo-detecting device may have improved photo-detection efficiency.
  • the first nitride layer 130 may be partially exposed by partially removing the light absorption layer 150 and the low-current blocking layer 140 .
  • a portion of the first nitride layer 130 under the exposed portion may be further removed in a thickness direction.
  • the light absorption layer 150 and the low-current blocking layer 140 may be partially removed by photolithography and etching, for example, dry etching. It is contemplated, however, that any other suitable methodology may be utilized in association with exemplary embodiments described herein.
  • a Schottky junction layer 160 is formed on the light absorption layer 150 .
  • the Schottky junction layer 160 may be formed by deposition (or other formation) of a substance including at least one of ITO, Ni, Co, Pt, W, Ti, Pd, Ru, Cr, and Au.
  • the thickness of the Schottky junction layer 160 may be adjusted in terms of light transmittance and Schottky characteristics, and, may be, for example, 10 nm or less in thickness.
  • the manufacturing method may further include forming a cap layer (not shown) between the Schottky junction layer 160 and the light absorption layer 150 .
  • the cap layer may be formed by growing a p-type-doped nitride semiconductor layer containing an impurity such as, for example, Mg.
  • the cap layer may have a thickness of 100 nm or less, such as, 5 nm or less. The cap layer may improve the Schottky characteristics of the device.
  • first electrode 171 and a second electrode 173 are formed on the Schottky junction layer 160 and the exposed area of the first nitride layer 130 , respectively, as seen in FIG. 1 .
  • the first and second electrodes 171 and 173 may be formed by deposition (or other formation) of metallic materials and lift-off, and may also be composed of multiple layers.
  • the first electrode 171 may be formed by stacking at least one of Ni and Au layers
  • the second electrode 173 may be formed by stacking at least one of Cr, Ni, and Au layers. It is contemplated, however, that exemplary embodiments are not limited thereto.
  • FIG. 9 is a graph comparing responsivity of photo-detecting devices depending upon wavelengths, according to exemplary embodiments.
  • the photo-detecting devices used in FIG. 9 include features of the exemplary embodiments described herein.
  • the UVA photo-detecting device includes a GaN layer as the light-absorption layer 150
  • the UVB photo-detecting device includes an AlGaN layer having an Al ratio of 28% as the light-absorption layer 150
  • the UVC photo-detecting device includes an AlGaN layer having an Al ratio of 50% as the light-absorption layer 150 .
  • the photo-detecting devices have high responsivity, as shown in FIG. 9 .
  • UV-to-visible light rejection ratios of the photo-detecting devices are calculated on the basis of measurement results on responsivity obtained by illuminating the photo-detecting devices with a white LED having a peak wavelength of 600 nm, and the calculation results show that all of these photo-detecting devices have UV-to-visible light rejection ratios of 10 4 or higher.

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