CN108574020A - 一种pin结构紫外光电探测器及其制备方法 - Google Patents

一种pin结构紫外光电探测器及其制备方法 Download PDF

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CN108574020A
CN108574020A CN201710148803.5A CN201710148803A CN108574020A CN 108574020 A CN108574020 A CN 108574020A CN 201710148803 A CN201710148803 A CN 201710148803A CN 108574020 A CN108574020 A CN 108574020A
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孙月静
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Abstract

本发明公开了半导体光电探测技术领域的一种PIN结构紫外光电探测器及其制备方法，包括基底，所述基底顶部设有光吸收层所述接触层的顶部左右两端分别设有N电极和P电极，一种PIN结构紫外光电探测器制备方法，该PIN结构紫外光电探测器制备方法具体包括以下步骤：S1：以Al2O3作为衬底；S2：形成n‑GaN基底；S4：在i‑AlInGaN光吸收层上再生长0.1‑0.3μm的掺杂Mg的p‑AlInGaN过渡层；S5：以p‑GaN作为欧姆接触层，本发明对结构进行优化设计，减少表面光反射率，优化有源层厚度，提高器件的量子效率，从而提高光响应度，其中晶格常数和禁带宽度可独立变化，能够提高与金属接触层的半导体浓度，有利于形成良好的欧姆接触。

Description

一种PIN结构紫外光电探测器及其制备方法
技术领域
本发明涉及半导体光电探测技术领域，具体为一种PIN结构紫外光电探测器及其制备方法。
背景技术
与光伏型相比，光电导型探测器有两个主要优点：具有内增益和制作简单。然而光电导型探测器要求加偏置，暗电流大，而且速度慢。肖特基型光探测器被认为是速度最快的探测器，但是它的势垒较低，漏电流比pin型大。由于耗尽区窄，而且GaN材料中耗尽区外产生的载流子扩散长度短，肖特基型光探测器量子效率较低。
目前，AlGaN/GaN材料和器件结构仍存在诸多亟待解决的问题，作为有源区的AlGaN与作为衬底的GaN材料之间晶格失配，导致外延层位错密度较高和紫外探测器的暗电流较大，p型掺杂Mg的激活能很大，其激活率很低，p型AlGaN材料带隙宽、功函数高、空穴浓度低，从而难以获得良好的金属与p型半导体接触，为此，我们提出了一种PIN结构紫外光电探测器及其制备方法投入使用，以解决上述问题。
发明内容
本发明的目的在于提供一种PIN结构紫外光电探测器及其制备方法，以解决上述背景技术中提出的外延层位错密度较高和紫外探测器的暗电流较大，p型掺杂Mg的激活能很大，其激活率很低，p型AlGaN材料带隙宽、功函数高、空穴浓度低，从而难以获得良好的金属与p型半导体接触的问题。
为实现上述目的，本发明提供如下技术方案：一种PIN结构紫外光电探测器，包括基底，所述基底顶部设有光吸收层，所述光吸收层的顶部设有过渡层，所述过渡层的顶部设有接触层，所述接触层的顶部左右两端分别设有N电极和P电极，所述基底、光吸收层、过渡层和接触层的外壁均涂覆有SiO2保护膜层。
优选的，所述基底为n-GaN基底，且n-GaN基底的厚度为2-4μm。
优选的，所述光吸收层为晶格常数和禁带宽度可独立变化的AlInGaN四元合金。
优选的，所述过渡层为p-AlInGaN过渡层，且过渡层为双层结构。
一种PIN结构紫外光电探测器制备方法，该PIN结构紫外光电探测器制备方法具体包括以下步骤：
S1：以Al2O3作为衬底，在Al2O3衬底上生长GaN缓冲层；
S2：在GaN缓冲层上生产2-4μm的掺杂Si的n-GaN，形成n-GaN基底；
S3：在n-GaN基底上生长0.1-0.3μm的i-AlInGaN光吸收层；
S4：在i-AlInGaN光吸收层上再生长0.1-0.3μm的掺杂Mg的p-AlInGaN过渡层；
S5：在p-AlInGaN过渡层上生长掺杂Mg的p-GaN，并以p-GaN作为欧姆接触层。
与现有技术相比，本发明的有益效果是：本发明对结构进行优化设计，减少表面光反射率，优化有源层厚度，提高器件的量子效率，从而提高光响应度，其中晶格常数和禁带宽度可独立变化，能够提高与金属接触层的半导体浓度，有利于形成良好的欧姆接触。
附图说明
图1为本发明结构示意图。
图中：1基底、2光吸收层、3过渡层、4接触层、5 N电极、6 P电极、7 SiO2保护膜层。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
一种PIN结构紫外光电探测器，包括基底1，所述基底1顶部设有光吸收层2，所述光吸收层2的顶部设有过渡层3，所述过渡层3的顶部设有接触层4，所述接触层4的顶部左右两端分别设有N电极5和P电极6，所述基底1、光吸收层2、过渡层3和接触层4的外壁均涂覆有SiO2保护膜层7
其中，所述基底1为n-GaN基底，且n-GaN基底1的厚度为2-4μm，所述光吸收层2为晶格常数和禁带宽度可独立变化的AlInGaN四元合金，所述过渡层3为p-AlInGaN过渡层，且过渡层3为双层结构，
本发明还提供了一种PIN结构紫外光电探测器制备方法，该PIN结构紫外光电探测器制备方法具体包括以下步骤：
S1：以Al2O3作为衬底，在Al2O3衬底上生长GaN缓冲层；
S2：在GaN缓冲层上生产2μm的掺杂Si的n-GaN，形成n-GaN基底1；
S3：在n-GaN基底1上生长0.1μm的i-AlInGaN光吸收层2；
S4：在i-AlInGaN光吸收层2上再生长0.1μm的掺杂Mg的p-AlInGaN过渡层3；
S5：在p-AlInGaN过渡层3上生长掺杂Mg的p-GaN，并以p-GaN作为欧姆接触层。
实施例二
一种PIN结构紫外光电探测器，包括基底1，所述基底1顶部设有光吸收层2，所述光吸收层2的顶部设有过渡层3，所述过渡层3的顶部设有接触层4，所述接触层4的顶部左右两端分别设有N电极5和P电极6，所述基底1、光吸收层2、过渡层3和接触层4的外壁均涂覆有SiO2保护膜层7
其中，所述基底1为n-GaN基底，且n-GaN基底1的厚度为2-4μm，所述光吸收层2为晶格常数和禁带宽度可独立变化的AlInGaN四元合金，所述过渡层3为p-AlInGaN过渡层，且过渡层3为双层结构，
本发明还提供了一种PIN结构紫外光电探测器制备方法，该PIN结构紫外光电探测器制备方法具体包括以下步骤：
S1：以Al2O3作为衬底，在Al2O3衬底上生长GaN缓冲层；
S2：在GaN缓冲层上生产4μm的掺杂Si的n-GaN，形成n-GaN基底1；
S3：在n-GaN基底1上生长0.3μm的i-AlInGaN光吸收层2；
S4：在i-AlInGaN光吸收层2上再生长0.3μm的掺杂Mg的p-AlInGaN过渡层3；
S5：在p-AlInGaN过渡层3上生长掺杂Mg的p-GaN，并以p-GaN作为欧姆接触层。
实施例三
一种PIN结构紫外光电探测器，包括基底1，所述基底1顶部设有光吸收层2，所述光吸收层2的顶部设有过渡层3，所述过渡层3的顶部设有接触层4，所述接触层4的顶部左右两端分别设有N电极5和P电极6，所述基底1、光吸收层2、过渡层3和接触层4的外壁均涂覆有SiO2保护膜层7
其中，所述基底1为n-GaN基底，且n-GaN基底1的厚度为2-4μm，所述光吸收层2为晶格常数和禁带宽度可独立变化的AlInGaN四元合金，所述过渡层3为p-AlInGaN过渡层，且过渡层3为双层结构，
本发明还提供了一种PIN结构紫外光电探测器制备方法，该PIN结构紫外光电探测器制备方法具体包括以下步骤：
S1：以Al2O3作为衬底，在Al2O3衬底上生长GaN缓冲层；
S2：在GaN缓冲层上生产3μm的掺杂Si的n-GaN，形成n-GaN基底1；
S3：在n-GaN基底1上生长0.2μm的i-AlInGaN光吸收层2；
S4：在i-AlInGaN光吸收层2上再生长0.2μm的掺杂Mg的p-AlInGaN过渡层3；
S5：在p-AlInGaN过渡层3上生长掺杂Mg的p-GaN，并以p-GaN作为欧姆接触层。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (5)

1.一种PIN结构紫外光电探测器，包括基底(1)，其特征在于：所述基底(1)顶部设有光吸收层(2)，所述光吸收层(2)的顶部设有过渡层(3)，所述过渡层(3)的顶部设有接触层(4)，所述接触层(4)的顶部左右两端分别设有N电极(5)和P电极(6)，所述基底(1)、光吸收层(2)、过渡层(3)和接触层(4)的外壁均涂覆有SiO2保护膜层(7)。
2.根据权利要求1所述的一种PIN结构紫外光电探测器，其特征在于：所述基底(1)为n-GaN基底，且n-GaN基底(1)的厚度为2-4μm。
3.根据权利要求1所述的一种PIN结构紫外光电探测器，其特征在于：所述光吸收层(2)为晶格常数和禁带宽度可独立变化的AlInGaN四元合金。
4.根据权利要求1所述的一种PIN结构紫外光电探测器，其特征在于：所述过渡层(3)为p-AlInGaN过渡层，且过渡层(3)为双层结构。
5.一种PIN结构紫外光电探测器制备方法，其特征在于：该PIN结构紫外光电探测器制备方法具体包括以下步骤：
S1：以Al2O3作为衬底，在Al2O3衬底上生长GaN缓冲层；
S2：在GaN缓冲层上生产2-4μm的掺杂Si的n-GaN，形成n-GaN基底(1)；
S3：在n-GaN基底(1)上生长0.1-0.3μm的i-AlInGaN光吸收层(2)；
S4：在i-AlInGaN光吸收层(2)上再生长0.1-0.3μm的掺杂Mg的p-AlInGaN过渡层(3)；
S5：在p-AlInGaN过渡层(3)上生长掺杂Mg的p-GaN，并以p-GaN作为欧姆接触层。
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