US9012940B2 - Optoelectronic semiconductor bodies having a reflective layer system - Google Patents

Optoelectronic semiconductor bodies having a reflective layer system Download PDF

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Publication number
US9012940B2
US9012940B2 US13/255,341 US201013255341A US9012940B2 US 9012940 B2 US9012940 B2 US 9012940B2 US 201013255341 A US201013255341 A US 201013255341A US 9012940 B2 US9012940 B2 US 9012940B2
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Prior art keywords
layer
adhesion
radiation
permeable
improving material
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US20120049228A1 (en
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Robert Walter
Vincent Grolier
Michael Schmal
Korbinian Perzlmaier
Franz Eberhard
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Osram Oled GmbH
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Osram Opto Semiconductors GmbH
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Assigned to OSRAM OPTO SEMICONDUCTORS GMBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GROLIER, VINCENT, DR., EBERHARD, FRANZ, DR., PERZLMAIER, KORBINIAN, DR., SCHMAL, MICHAEL, WALTER, ROBERT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present application relates to an optoelectronic semiconductor body having a reflective layer system.
  • the semiconductor body comprises an active semiconductor layer sequence.
  • the active semiconductor layer sequence expediently contains an n-conductive layer, a p-conductive layer and an active layer between the n-conductive layer and the p-conductive layer.
  • the active layer preferably comprises a pn-junction, a double heterostructure, a single quantum well structure or a multiple quantum well structure for generating radiation.
  • the active semiconductor layer sequence is provided preferably for the emission of electromagnetic radiation—in particular in the infrared, visible and/or ultraviolet spectral range. Alternatively or in addition, the active semiconductor layer sequence can also be provided for the reception of electromagnetic radiation.
  • the active semiconductor layer sequence is preferably an epitaxial layer sequence which is, for example, epitaxially deposited on a growth substrate, wherein the growth substrate can be subsequently removed or thinned to a significant extent.
  • the optoelectronic semiconductor body comprises a reflective layer system.
  • the reflective layer system contains a first radiation-permeable layer which adjoins the active semiconductor layer sequence.
  • the first radiation-permeable layer contains a dielectric material, in particular silicon dioxide (SiO 2 ).
  • the term “radiation-permeable layer” refers to a layer which consists of a material composition which is at least partially permeable, and in particular transparent, for electromagnetic radiation, for the emission or reception of which the active semiconductor layer sequence is provided.
  • the first radiation-permeable layer contains a distributed Bragg reflector (DBR) which contains e.g. several layer pairs each having an SiO 2 layer and a TiO 2 layer.
  • DBR distributed Bragg reflector
  • the reflective layer system contains a metal layer which follows the first radiation-permeable layer in the direction away from the semiconductor layer sequence.
  • the metal layer is disposed on the side of the first radiation-permeable layer facing away from the semiconductor layer sequence.
  • the second radiation-permeable layer contains an adhesion-improving material or consists of the adhesion-improving material.
  • the metal layer is applied directly to the adhesion-improving material of the second radiation-permeable layer.
  • the adhesion-improving material differs from the first dielectric material. It is selected such that the adhesion of the metal layer is improved in comparison with the adhesion on the first dielectric material.
  • Adhesion is improved in particular if a tensile force and/or a shear force, which is required in order to separate the metal layer from the adhesion-improving material, is greater than the corresponding tensile force or shear force which is required in order to separate a corresponding metal layer, which is applied directly to the first dielectric material, from this dielectric material.
  • Such a reflective layer system is advantageous in order to achieve a high degree of reflectivity.
  • light rays which extend in the semiconductor layer sequence at a flat angle towards the reflective layer system are totally reflected on the boundary surface between the semiconductor layer sequence and the first radiation-permeable layer.
  • Light rays which do not fulfill the reflection conditions for total reflection and penetrate into the first radiation-permeable layer are reflected back in the direction of the semiconductor layer sequence e.g. by means of the metal layer. In this manner, a high degree of reflectivity can be achieved over a large angular range.
  • the adhesion-improving material is a second dielectric material.
  • the second dielectric material is different from the first dielectric material.
  • the second dielectric material is different from silicon dioxide. Silicon dioxide is a dielectric material having particularly disadvantageous adhesion properties for the metal layer.
  • the adhesion-improving material in particular the second dielectric material, is a nitrogen-containing compound, e.g. aluminum nitride (AlN), a silicon nitride (Si x N y ) such as Si 3 N 4 or tantalum nitride (TaN).
  • AlN aluminum nitride
  • Si x N y silicon nitride
  • TaN tantalum nitride
  • the adhesion of metal layers on nitrogen-containing compounds, in particular on Si 3 N 4 is improved in particular with respect to the adhesion on other dielectric materials, such as silicon dioxide.
  • the adhesion-improving material is a transparent conducting oxide (TCO).
  • TCO transparent conducting oxide
  • the transparent conducting oxide is indium tungsten oxide (IW), indium zinc oxide (IZO) or zinc oxide (ZnO).
  • IW indium tungsten oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • ITO indium tin oxide
  • Other transparent conducting oxides such as indium tin oxide (ITO) also have an adhesion which is improved compared to silicon dioxide.
  • ITO indium tin oxide
  • the adhesion properties of zinc oxide are even further improved compared to these other transparent conducting oxides.
  • the second radiation-permeable layer has a layer thickness of 100 nm or less. Preferably, it has a layer thickness of ten nanometers or less. In an advantageous manner, in the case of such a layer thickness the absorption losses due to the second radiation-permeable layer are particularly small. Such a small layer thickness is advantageous particularly in the case of transparent conducting oxides as the adhesion-improving material, since in comparative terms they are greatly absorbent.
  • the second radiation-permeable layer comprises a layer system consisting of layer pairs having an alternately high and low refractive index.
  • This type of layer system constitutes e.g. a distributed Bragg reflector.
  • distributed Bragg reflectors are known in principle to the person skilled in the art and therefore will not be explained in greater detail at this juncture.
  • one layer pair, a plurality of layer pairs or each layer pair contains a layer which consists of the adhesion-improving material, in particular of a silicon nitride such as Si 3 N 4 or zinc oxide.
  • the second layer of the layer pair(s) consists e.g. of silicon dioxide.
  • the metal layer comprises a multiple layer structure.
  • the multiple layer structure has an adhesion-promotion layer which faces towards the semiconductor layer sequence and is applied directly to the adhesion-improving material of the second radiation-permeable layer. In the direction away from the semiconductor layer sequence, the adhesion-promotion layer is followed by a reflector layer.
  • the adhesion-promotion layer contains at least one of the metals from the group formed by Ti, Ta, Al, Pt, Pd, Cr and Ni. For example, it consists of one of these metals or of an alloy of these metals.
  • the adhesion-promotion layer has a thickness of 50 nanometers or less, particularly preferably one nanometer or less.
  • the metal layer preferably contains one of the following metals or consists of one of these metals: Al, Ag, Au. Preferably, this/these metal(s) is/are contained in the reflector layer.
  • the reflector layer preferably adjoins the adhesion-promotion layer on the side facing away from the semiconductor layer sequence.
  • FIGS. 1 and 2 Further advantages and advantageous embodiments and developments are apparent from the following exemplary embodiments described in conjunction with FIGS. 1 and 2 , in which:
  • FIG. 1 shows a schematic cross-sectional view of a semiconductor body in accordance with a first exemplary embodiment
  • FIG. 2 shows a schematic cross-sectional view of a semiconductor body in accordance with a second exemplary embodiment.
  • FIG. 1 illustrates an optoelectronic semiconductor body 1 in accordance with a first exemplary embodiment.
  • the semiconductor body comprises an active semiconductor layer sequence 10 .
  • the active semiconductor layer sequence 10 is, for example, grown epitaxially on a growth substrate (not illustrated in the Figures).
  • the growth substrate can be removed or thinned to a significant extent.
  • the active semiconductor layer sequence 10 contains an n-conductive layer 11 , an active layer 12 which contains e.g. a multiple quantum well structure for generating radiation, and a p-conductive layer 13 .
  • the sequence of the n-conductive and p-conductive layers 11 , 13 can also be interchanged.
  • a reflective layer system 20 is applied to a first main surface 101 of the semiconductor layer sequence 10 .
  • the reflective layer system 20 consists of a first radiation-permeable layer 21 , a second radiation-permeable layer 22 and a metal layer 23 .
  • the second radiation-permeable layer 22 is applied to a first main surface 211 of the first radiation-permeable layer 21 .
  • the first radiation-permeable layer 21 adjoins the first main surface 101 of the semiconductor layer sequence 10 .
  • the metal layer 23 is applied to a first main surface 221 of the second radiation-permeable layer 22 .
  • the second main surface 222 of the second radiation-permeable layer which lies opposite the first main surface 221 adjoins the first main surface 211 of the first radiation-permeable layer 21 .
  • the first radiation-permeable layer 21 consists e.g. of silicon dioxide (SiO 2 ).
  • the second radiation-permeable layer 22 consists of the silicon nitride Si 3 N 4 and has a layer thickness D of 10 nm or less.
  • the second radiation-permeable layer 22 consists of the transparent conducting oxide ZnO.
  • the metal layer 23 which by means of a main surface 232 adjoins the second radiation-permeable layer 22 consists of an adhesion-promotion layer 23 A and a reflector layer 23 B.
  • the adhesion-promotion layer 23 A is applied directly to the adhesion-improving material—i.e., to the silicon nitride in the present case or to the zinc oxide of the second radiation-permeable layer 22 in the case of the variant of this exemplary embodiment.
  • the adhesion-promotion layer 23 A consists e.g. of chromium (Cr) and/or titanium (Ti). Applied directly to the adhesion-promotion layer is the reflector layer 23 B which in the present case consists of silver (Ag).
  • FIG. 2 illustrates a second exemplary embodiment of an optoelectronic semiconductor body.
  • the optoelectronic semiconductor body 1 in accordance with the second exemplified embodiment differs from that of the first exemplified embodiment in that the second radiation-permeable layer 22 is formed as a distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • the second radiation-permeable layer consists of layer pairs 22 A, 22 B of layers having an alternately high and low refractive index.
  • the first layers 22 A of the layer pairs consist of silicon dioxide which has a refractive index n of about n ⁇ 1.45 and the second layers 22 B of the layer pairs consist of silicon nitride which has a refractive index n of about n ⁇ 2.
  • the DBR comprises e.g. at least five, in particular at least ten, of these layer pairs 22 A, 22 B.
  • the DBR terminates with a silicon nitride layer 22 B, to which the metal layer 23 is directly applied.
  • the invention is not limited to the exemplary embodiments by way of the description with reference thereto. Rather, it includes each new feature and each combination of features in the exemplary embodiments and claims, even if this combination itself is not explicitly stated in the claims or exemplified embodiments.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
US13/255,341 2009-04-30 2010-04-26 Optoelectronic semiconductor bodies having a reflective layer system Active 2032-05-07 US9012940B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009019524 2009-04-30
DE102009019524.6 2009-04-30
DE102009019524.6A DE102009019524B4 (de) 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
PCT/EP2010/055546 WO2010125028A2 (de) 2009-04-30 2010-04-26 Optoelektronischer halbleiterkörper mit einem reflektierenden schichtsystem

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US20120049228A1 US20120049228A1 (en) 2012-03-01
US9012940B2 true US9012940B2 (en) 2015-04-21

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US (1) US9012940B2 (zh)
JP (1) JP2012525693A (zh)
KR (1) KR101689413B1 (zh)
CN (1) CN102414826B (zh)
DE (1) DE102009019524B4 (zh)
TW (1) TW201101535A (zh)
WO (1) WO2010125028A2 (zh)

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US10468569B2 (en) 2015-05-15 2019-11-05 Osram Opto Semiconductor Gmbh Method of producing a connection support, connection support and optoelectronic semiconductor component comprising a connection support

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JP2014139997A (ja) * 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ
JP6806446B2 (ja) * 2016-01-25 2021-01-06 日亜化学工業株式会社 半導体素子及びその製造方法
JP2018026597A (ja) * 2017-11-16 2018-02-15 ローム株式会社 発光素子および発光素子パッケージ
JP6892909B2 (ja) * 2017-11-16 2021-06-23 ローム株式会社 発光素子および発光素子パッケージ
DE102018107673A1 (de) * 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Herstellungsverfahren für einen optoelektronischen Halbleiterchip
CN116323474A (zh) * 2020-10-09 2023-06-23 Oti照明公司 包括低折射率涂层和辐射改性层的器件
JP2023553379A (ja) 2020-12-07 2023-12-21 オーティーアイ ルミオニクス インコーポレーテッド 核形成抑制被膜及び下地金属被膜を用いた導電性堆積層のパターニング
CN114141924B (zh) * 2021-11-19 2023-08-11 厦门市三安光电科技有限公司 发光二极管及其制备方法

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DE102009019524A1 (de) 2010-11-04
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WO2010125028A3 (de) 2011-04-07
US20120049228A1 (en) 2012-03-01

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