US8587080B2 - Optical filtering matrix structure and associated image sensor - Google Patents

Optical filtering matrix structure and associated image sensor Download PDF

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US8587080B2
US8587080B2 US12/373,832 US37383207A US8587080B2 US 8587080 B2 US8587080 B2 US 8587080B2 US 37383207 A US37383207 A US 37383207A US 8587080 B2 US8587080 B2 US 8587080B2
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layer
substantially transparent
optical
optical filtering
filtering structure
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Pierre Gidon
Gilles Grand
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Definitions

  • the invention relates to an optical filtering matrix structure and an image sensor which comprises an optical filtering matrix structure according to the invention.
  • the invention finds a particular advantageous application for producing image sensors of small dimensions such as for example, miniature camera image sensors of mobile telephones.
  • CCD sensors Charge coupled devices
  • CMOS APS Active Pixel Sensor
  • One of the important problems to be solved for an image sensor is that of obtaining colors. It is known that starting with three colors taken from the visible spectrum (red, green, blue), it is possible to record and to then reproduce the majority of colors.
  • the second option (adding sets of filters positioned as a matrix to the surface of a matrix of detectors) is the one which is the most used.
  • the most standard matrix is then a matrix commonly called a Bayer matrix.
  • FIG. 1 An example of a Bayer matrix, as seen from the top, is illustrated in FIG. 1 .
  • the Bayer matrix illustrated in FIG. 1 is a 2 ⁇ 2 (two lines ⁇ two columns) matrix. From left to right, the filters of the line of row 1 are green and red filters, respectively, and the filters of the line of row 2 are blue, green filters, respectively.
  • Producing such a filtering matrix is conventionally accomplished by using colored resins.
  • resins which are photosensitive to ultraviolet radiations, which may be removed in a developing bath there where they have not been insolated.
  • resins which are photosensitive to ultraviolet radiations, which may be removed in a developing bath there where they have not been insolated.
  • three layers of resin are successively deposited: one for green, one for red and one for blue. At each deposition, each of the resins is insolated through a mask and developed so that it only remains there where it should be placed.
  • the diagram of FIG. 2 illustrates a simplified structure of an APS CMOS sensor from the prior art.
  • the CMOS APS sensor comprises a photosensitive semiconducting element 1 , for example silicon, at the surface of which are formed photosensitive areas Zph and electronic circuits E 1 , a silica layer 2 in which electric interconnections 3 are integrated, which connect together the electronic circuits E 1 , resin layers forming blue filters B, red filters R and green filters V, a layer of resin 4 and a set of micro-lenses MC.
  • This sensor making technique is presently well under control.
  • a drawback of this sensor is its impossibility of filtering infrared. It is therefore necessary to add afterwards above the sensor, a glass sheet provided with a multilayer interferential filter for removing infrared.
  • the resins are not very dense and it is presently necessary to lay a thickness of resin close to or larger than one micron in order to obtain a sufficient filtering effect.
  • the size of the pixels of recent image sensors is consequently close to this size (typically 2 ⁇ m). This pixel size then poses a problem when the rays arrive with strong incidence at the surface of the sensor (image edge or strongly open objective). Indeed, the photons allowed to pass through a filter may then finish their course in the photosite of the neighboring filter. This phenomenon therefore considerably limits miniaturization.
  • the colored resins are also known for being easily inhomogeneous. Filtering inhomogeneity is therefore all the more marked since the pixels are small. This also represents another drawback.
  • absorbent materials other than resins but, if they may be more absorbent, these materials pose too many problems in producing them for being compatible with a simple production of a matrix of integrated photosites, which production then becomes too expensive.
  • the invention does not have the drawbacks mentioned above.
  • the invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters, one elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers and n substantially transparent layers which alternate between a first metal layer and an n th substantially transparent layer, the n metal layers each having constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of an elementary optical filter, n being an integer larger than or equal to 2.
  • n 2 and only one substantially transparent layer has variable thickness, the substantially transparent layer which has variable thickness being the substantially transparent layer located between the first metal layer and a second metal layer.
  • the elementary optical filters are positioned as a matrix.
  • the matrix is a Bayer matrix for filtering the three colors, red, green and blue.
  • the metal layers are in silver (Ag).
  • the material which makes up the substantially transparent layers is selected from titanium dioxide (TiO 2 ), silica (SiO 2 ), silicon nitride (Si 3 N 4 ), hafnium oxide (HfO 2 ).
  • the invention also relates to an optical sensor comprising an optical filtering structure and a photosensitive semiconducting substrate on which the optical filtering structure is deposited, characterized in that the optical filtering structure is a structure according to the invention, the first metal layer of which is deposited on a first face of the semiconducting substrate.
  • the invention also relates to an optical sensor comprising an optical filtering structure and a photosensitive semiconducting substrate on which the optical filtering structure is deposited, characterized in that the optical filtering structure is a structure according to the invention and in that the optical sensor comprises a barrier layer, a first face of which is deposited on a first face of the semiconducting substrate and a second face of which is in contact with the first metal layer of the optical filtering structure.
  • the barrier layer is made in a material identical with the material which forms the substantially transparent layers of the optical filtering structure.
  • the barrier layer is partly or totally electrically conducting.
  • the material of the barrier layer is indium-doped tin oxide (ITO) in the electrically conducting portions and silica (SiO 2 ) or silicon nitride (Si 3 N 4 ) in the portions which are not electrically conducting.
  • ITO indium-doped tin oxide
  • SiO 2 silica
  • Si 3 N 4 silicon nitride
  • photosensitive areas and electronic components are formed on the first face of the photosensitive semiconductor.
  • photosensitive areas and electronic components are formed on a second face of the photosensitive semiconductor, opposite to the first face.
  • Multilayer filters consisting of an alternation of transparent layers and of metal layers are known for making structures with a photonic forbidden band, more commonly called PBG (Photonic Band Gap) structures.
  • PBG Photonic Band Gap
  • U.S. Pat. No. 6,262,830 discloses metal-dielectric transparent structures with a photonic forbidden band.
  • the metal-dielectric transparent structures with a photonic forbidden band disclosed in U.S. Pat. No. 6,262,830 consist of the superposition of a plurality of transparent dielectric layers with a thickness close to one half-wavelength separated by thin metal layers. The thickness of each dielectric or metal layer is uniform. These structures are designed in order to let through certain frequency bands and to block other ones. A drawback of these structures is that they absorb a portion of the light, including in the areas where it would be desired that they be transparent.
  • the invention produces an optical filtering structure adapted to the transmission of certain particular frequencies by a change in the thickness of only one or two transparent layers, whereas, moreover, all the other layers are of constant thickness.
  • the transparent layer(s) with variable thickness vary stepwise depending on their position in the matrix.
  • an optical filtering structure according to the invention for example a Bayer matrix, may then be such that all the elementary optical filters of the matrix have a smaller thickness than the shortest of the useful wavelengths.
  • FIG. 1 already described, illustrates a top view of a Bayer matrix according to the prior art
  • FIG. 2 already described, illustrates a sectional view of a CMOS APS sensor according to the prior art
  • FIG. 3 illustrates a top view of an optical filtering matrix structure according to the invention
  • FIGS. 4A and 4B illustrate sectional views along two different axes of an optical filtering matrix structure according to a first embodiment of the invention
  • FIG. 5 illustrates the performances of optical filtering of an optical filtering matrix structure according to the first embodiment of the invention
  • FIGS. 6A and 6B illustrate sectional views along two different axes of an optical filtering matrix structure according to a second embodiment of the invention
  • FIG. 7 illustrates the optical filtering performances of an optical filtering matrix structure according to the second embodiment of the invention.
  • FIG. 8 illustrates a sensor block sectional view which uses an optical filtering matrix structure according to the second embodiment of the invention
  • FIG. 9 illustrates a first alternative sensor according to the invention
  • FIG. 10 illustrates a first alternative sensor according to the invention.
  • FIG. 3 illustrates a top view of an optical filtering matrix structure according to the invention.
  • the optical filtering matrix structure of the invention has a geometry obtained by repeating the basic structure from the prior art illustrated in FIG. 1 .
  • Filtering cells R, V, B for selecting the colors red, green and blue, respectively, are placed one beside another.
  • FIGS. 4A and 4B illustrate sectional views, along two different axes, of an optical filtering matrix structure according to a first embodiment of the invention.
  • FIG. 4A is a sectional view along the axis AA of FIG. 3
  • FIG. 4B is the sectional view along the axis BB of FIG. 3 .
  • the AA axis diagonally cuts the green optical filters V.
  • the BB axis is an axis perpendicular to the AA axis and cuts, outside the diagonals, successive blue B, green V, red R, green V, blue B, green V, red R, etc. optical filters.
  • the image sensor comprises a photosensitive semiconducting element 1 , for example silicon, on which a first metal layer m 1 , a first transparent layer d 1 , a second metal layer m 2 and a second transparent layer d 2 are successively laid.
  • the metal used for producing the metal layers m 1 and m 2 is silver (Ag) for example and the material used for producing the transparent layers d 1 and d 2 is a dielectric for example, which may be titanium dioxide (TiO 2 ) for example.
  • the layer d 1 is an adjustment layer, the change in thickness of which changes the different transmission wavelengths of the filter, all the other layers having constant thickness.
  • the change in thickness of the layer d 1 is thus adapted to selective transmission of the blue color (thickness e 1 ), of the green color (thickness f 1 ) and of the red color (thickness g 1 ).
  • the thicknesses of the layers m 1 , m 2 and d 2 are equal, for example to 27 nm, 36 nm and 41 nm, respectively and the thickness of the layer d 1 varies between 50 nm and 90 nm, i.e.: 52 nm for blue, 70 nm for green, 87 nm for red.
  • the thicknesses of the layers would assume different values with other materials.
  • the metal layers may be made with Ag, Al, Au, Nb, Li and the transparent layers may be made with TiO 2 , ITO, SiO 2 , Si 3 N 4 , MgF 2 , SiON, Al 2 O 3 , HfO 2 .
  • the thicknesses of the layers m 1 , d 1 , m 2 , d 2 are calculated with algorithms for multilayer filter calculations.
  • FIG. 5 illustrates the optical filtering performances of a filtering matrix structure according to the first embodiment of the invention.
  • Three curves are illustrated in FIG. 5 , i.e. a transmission curve C 1 relative to the blue color (for blue filters), a transmission curve C 2 relative to the green color (for green filters) and a transmission curve C 3 relative to the red color (for red filters).
  • the curves C 1 , C 2 , C 3 illustrate the transmission coefficient of the matrix structure expressed as percentages depending on the wavelength ⁇ expressed in nm.
  • the optical filters only show one transmission peak between the near ultraviolet (400 nm) and infrared (1100 nm). This is also an advantage as compared with the dielectric structures of the prior art which already have parasitic transmission in the near infrared (>800 nm).
  • FIGS. 6A and 6B illustrate sectional views, along two different axes of an optical filtering matrix structure according to a second embodiment of the invention.
  • FIG. 6A is a sectional view along the AA axis
  • FIG. 6B is a sectional view along the BB axis.
  • the image sensor comprises a photosensitive semiconducting element 1 , for example silicon, on which three metal layers m 1 , m 2 , m 3 and three transparent layers d 1 , d 2 , d 3 are alternately laid, the metal layer m 1 being in contact with the semiconducting element 1 .
  • the metal layers m 1 -m 3 are in silver (Ag) for example, and the transparent layers d 1 -d 3 are in titanium dioxide (TiO 2 ) for example.
  • the layers d 1 and d 2 are adjustment layers, of which the changes in thickness set the different transmission wavelengths of the filter, all the other layers having a constant thickness.
  • An overthickness resulting from a change in thickness of the layer d 1 coincides with an overthickness resulting from a change in thickness of the layer d 2 (the overthicknesses are stacked).
  • the layer d 3 is an antireflection layer. The changes in thickness of the layers d 1 and d 2 are thus adapted to selective transmission of the different colors:
  • the thicknesses of the layers m 1 , m 2 , m 3 and d 3 are for example equal to 23 nm, 39 nm, 12 nm and 65 nm, respectively, the thicknesses of the layers d 1 and d 2 being comprised between 50 nm and 100 nm, i.e.:
  • the transmission spectrum resulting from this matrix structure is illustrated in FIG. 7 .
  • the curves D 1 , D 2 , D 3 represent the transmission coefficient T of the matrix structure expressed as percentages depending on the wavelength ⁇ expressed in nm. At the central wavelengths which correspond to the three desired colors (red, green, blue), transmission is substantially comprised between 60 and 70%.
  • FIG. 8 illustrates a sectional view of an enhancement of an optical filtering matrix structure according to the second embodiment of the invention.
  • the matrix structure is here equipped with a set of micro-lenses MC which focus the light L in the photosites.
  • the MC micro-lenses are placed on a planarization layer p.
  • the matrix structure of the invention here comprises a barrier layer b which protects the semiconductor 1 from the metal layer m 1 .
  • the barrier layer b then prevents the semiconductor 1 from being contaminated by the metal layer m 1 (pollution by migration of metal ions into the semiconductor).
  • the metal is silver (Ag)
  • a silica barrier layer or a layer of indium-doped tin oxide (ITO) (Indium Tin Oxide) the desired protection may be achieved.
  • the thickness of the silica layers or of ITO is, for example, equal to 10 nm.
  • the barrier layer b may be non-conducting (this is the case of silica SiO 2 and of silicon nitride Si 3 N 4 ), conducting (this is the case of ITO) or partly conducting. When it is conducting, the barrier layer b may advantageously be used as an electrode at the surface of the semiconductor 1 .
  • ITO may also be used for making the transparent layers of the structure, ITO being transparent. The layers b, d 1 , d 2 , d 3 are then in ITO and the layers m 1 , m 2 , m 3 are in Ag.
  • Two materials are then sufficient for making the structure according to the invention in which the photosensitive semiconductor is protected from a contact with metal. It is also possible to replace the silver with a less contaminating metal alloy for the semiconductor but still having good index properties. The metal alloy and ITO are then also sufficient for making a structure according to the invention, in which the photosensitive semiconductor is protected.
  • FIGS. 9 and 10 illustrate two alternative optical sensors according to the invention.
  • FIG. 9 illustrates an optical sensor in which light arrives on the face of the photosensitive semiconductor on which the photosensitive areas Zph and electronic circuits E 1 are formed.
  • light should avoid the metal interconnections 3 .
  • the optical filters of the invention are generally much thinner than the filters of the prior art. It is then advantageous to place the filters as close as possible to the photosensitive areas Zph, between the interconnections 3 . Comparatively to the corresponding structure of the prior art (cf. FIG. 2 ), the optical sensor accordingly has better insensitivity to the incidence of the light.
  • FIG. 10 illustrates an optical sensor in which light arrives on the face of the photosensitive semiconductor which is opposite to the face on which the photosensitive areas Zph and the electronic circuits E 1 are formed.
  • the optical filtering matrix of the invention is very easily adapted to this type of sensor.
  • the optical sensor of the invention has an advantageously smaller thickness than a corresponding optical sensor of the prior art.
  • the proximity of the optical filters advantageously allows the micro-lenses MC to be suppressed.
  • the senor illustrated in FIG. 10 comprises, between the semiconductor 1 and the first metal layer m 1 , a barrier layer b provided with electrically conducting areas k 1 and electrically insulating areas k 2 .
  • the conducting k 1 and insulating k 2 areas enable electric contact to be established at the desired locations.
  • the two particular structures illustrated in FIGS. 9 and 10 advantageously have a transmission spectrum which varies very little with the angle of incidence of the light.
  • a green filter (TiO 2 /Ag) having a filter bandwidth of 90 nm has its average wavelength vary by substantially 20 nm when the incidence varies from 0° to 40°. Comparatively, this change would be 38 nm for a multilayer filter of the prior art (SiO 2 /TiO 2 ).
  • filtering structures of the invention may be made with materials such as silver and ITO which are electric conductors, so that the filter may play the role of an electrode, this electrode being able to have several points of contact with the underlying circuit (El, Zph).
  • the transparent layers and the metal layers are made by vacuum sputtering but other techniques are also possible such as for example vacuum evaporation. Control of the thickness is accomplished by knowing the rate of the depositions.
  • a protective layer SiO 2
  • a metal layer silica
  • ITO transparent material layer
  • Two steps of photolithography-etching are then carried out.
  • Masking of the areas which should not be etched is made with resin.
  • Etching is accomplished, preferably, as a reactive ionic etching (for example under chlorine+HBr gases for etching ITO).
  • the point for stopping the etching is determined by an interferometer.
  • an ITO layer with a thickness of 90 nm it is possible to obtain an ITO thickness of 70 nm for green, 50 nm for blue, the initial thickness of 90 nm being kept for red.
  • a silver layer (Ag) and an ITO layer each having a constant thickness, are then deposited successively.
  • the invention provides that the protective layer may be more complicated to produce than a simple dielectric layer.
  • the intention is to use an elementary filter as a conducting electrode, then it is mandatory to replace the insulating protective layer with a conducting protective layer at the locations where the protective layer is in electric contact with the photosensitive semiconductor.
  • Producing such a layer with two materials, for example SiO 2 for producing the insulating areas and ITO for producing the conducting areas, is conducted in four steps, i.e.:

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Optics & Photonics (AREA)
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FR0653093A FR2904432B1 (fr) 2006-07-25 2006-07-25 Structure matricielle de filtrage optique et capteur d'images associe
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US10197716B2 (en) 2012-12-19 2019-02-05 Viavi Solutions Inc. Metal-dielectric optical filter, sensor device, and fabrication method
US10222523B2 (en) 2012-12-19 2019-03-05 Viavi Solutions Inc. Sensor device including one or more metal-dielectric optical filters
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