US8546885B2 - Metal gate electrode of a field effect transistor - Google Patents

Metal gate electrode of a field effect transistor Download PDF

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Publication number
US8546885B2
US8546885B2 US13/189,732 US201113189732A US8546885B2 US 8546885 B2 US8546885 B2 US 8546885B2 US 201113189732 A US201113189732 A US 201113189732A US 8546885 B2 US8546885 B2 US 8546885B2
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metal
gate electrode
work
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US20130026637A1 (en
Inventor
Cheng-Hao Hou
Peng-Soon Lim
Da-Yuan Lee
Xiong-Fei Yu
Chun-Yuan Chou
Fan-yi Hsu
Jian-Hao Chen
Kuang-Yuan Hsu
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority to US13/189,732 priority Critical patent/US8546885B2/en
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, Jian-hao, YU, Xiong-fei, CHOU, CHUN-YUAN, HOU, CHENG-HAO, HSU, FAN-YI, HSU, KUANG-YUAN, LEE, DA-YUAN, LIM, PENG-SOON
Priority to CN201210026682.4A priority patent/CN102903742B/zh
Publication of US20130026637A1 publication Critical patent/US20130026637A1/en
Priority to US14/018,087 priority patent/US9196691B2/en
Application granted granted Critical
Publication of US8546885B2 publication Critical patent/US8546885B2/en
Priority to US14/936,939 priority patent/US9449828B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
US13/189,732 2011-07-25 2011-07-25 Metal gate electrode of a field effect transistor Active US8546885B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/189,732 US8546885B2 (en) 2011-07-25 2011-07-25 Metal gate electrode of a field effect transistor
CN201210026682.4A CN102903742B (zh) 2011-07-25 2012-02-07 场效应晶体管的金属栅电极
US14/018,087 US9196691B2 (en) 2011-07-25 2013-09-04 Metal gate electrode of a field effect transistor
US14/936,939 US9449828B2 (en) 2011-07-25 2015-11-10 Method of forming metal gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/189,732 US8546885B2 (en) 2011-07-25 2011-07-25 Metal gate electrode of a field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/018,087 Division US9196691B2 (en) 2011-07-25 2013-09-04 Metal gate electrode of a field effect transistor

Publications (2)

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US20130026637A1 US20130026637A1 (en) 2013-01-31
US8546885B2 true US8546885B2 (en) 2013-10-01

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US13/189,732 Active US8546885B2 (en) 2011-07-25 2011-07-25 Metal gate electrode of a field effect transistor
US14/018,087 Expired - Fee Related US9196691B2 (en) 2011-07-25 2013-09-04 Metal gate electrode of a field effect transistor
US14/936,939 Active US9449828B2 (en) 2011-07-25 2015-11-10 Method of forming metal gate electrode

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US14/018,087 Expired - Fee Related US9196691B2 (en) 2011-07-25 2013-09-04 Metal gate electrode of a field effect transistor
US14/936,939 Active US9449828B2 (en) 2011-07-25 2015-11-10 Method of forming metal gate electrode

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US (3) US8546885B2 (zh)
CN (1) CN102903742B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236379B2 (en) 2011-09-28 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabrication method thereof
KR20140139340A (ko) * 2013-05-27 2014-12-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9997457B2 (en) * 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
US9583362B2 (en) 2014-01-17 2017-02-28 Taiwan Semiconductor Manufacturing Company Ltd. Metal gate structure and manufacturing method thereof
US9231071B2 (en) * 2014-02-24 2016-01-05 United Microelectronics Corp. Semiconductor structure and manufacturing method of the same
KR102164542B1 (ko) * 2014-05-21 2020-10-12 삼성전자 주식회사 매립형 게이트 구조체를 갖는 반도체 소자 및 그 제조 방법
US9831100B2 (en) * 2014-06-24 2017-11-28 Intermolecular, Inc. Solution based etching of titanium carbide and titanium nitride structures
US10056462B2 (en) * 2014-08-13 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. Metal gate structure and manufacturing method thereof
CN105990145B (zh) * 2015-02-04 2019-06-28 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
US9685532B2 (en) 2015-03-24 2017-06-20 International Business Machines Corporation Replacement metal gate structures
CN106298484B (zh) * 2015-06-01 2019-03-12 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
KR102286112B1 (ko) * 2015-10-21 2021-08-04 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN107785248B (zh) * 2016-08-25 2021-04-06 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
US10163899B2 (en) * 2016-11-30 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature compensation circuits
US10276391B1 (en) * 2018-06-13 2019-04-30 Globalfoundries Inc. Self-aligned gate caps with an inverted profile
CN109267025B (zh) * 2018-11-16 2020-10-09 江苏科技大学 基于陶瓷基片表面制备Ti-Al-Ru-N纳米硬质薄膜的方法
US11282934B2 (en) 2019-07-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Structure for metal gate electrode and method of fabrication
CN115863408A (zh) * 2021-08-20 2023-03-28 长鑫存储技术有限公司 晶体管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216038A1 (en) * 2002-05-20 2003-11-20 Sucharita Madhukar Dual metal gate transistors for CMOS process
US20060278934A1 (en) * 2005-06-13 2006-12-14 Yoshihiko Nagahama Semiconductor device and method of manufacturing semiconductor device
US20070262451A1 (en) * 2006-05-09 2007-11-15 Willy Rachmady Recessed workfunction metal in CMOS transistor gates

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7977751B2 (en) * 2007-02-06 2011-07-12 Sony Corporation Insulated gate field effect transistor and a method of manufacturing the same
US8039381B2 (en) * 2008-09-12 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist etch back method for gate last process
US8779530B2 (en) * 2009-12-21 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure of a field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216038A1 (en) * 2002-05-20 2003-11-20 Sucharita Madhukar Dual metal gate transistors for CMOS process
US20060278934A1 (en) * 2005-06-13 2006-12-14 Yoshihiko Nagahama Semiconductor device and method of manufacturing semiconductor device
US20070262451A1 (en) * 2006-05-09 2007-11-15 Willy Rachmady Recessed workfunction metal in CMOS transistor gates

Also Published As

Publication number Publication date
US9196691B2 (en) 2015-11-24
US20160064223A1 (en) 2016-03-03
CN102903742B (zh) 2015-08-05
US9449828B2 (en) 2016-09-20
US20130026637A1 (en) 2013-01-31
US20140004694A1 (en) 2014-01-02
CN102903742A (zh) 2013-01-30

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