US8399287B1 - Method of manufacturing solar cell - Google Patents
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- US8399287B1 US8399287B1 US13/013,628 US201113013628A US8399287B1 US 8399287 B1 US8399287 B1 US 8399287B1 US 201113013628 A US201113013628 A US 201113013628A US 8399287 B1 US8399287 B1 US 8399287B1
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 238000007747 plating Methods 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 230000000977 initiatory effect Effects 0.000 claims description 4
- 239000010953 base metal Substances 0.000 claims 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 abstract description 2
- 230000002301 combined effect Effects 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 239000003518 caustics Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007649 pad printing Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000010023 transfer printing Methods 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- This invention relates generally to solar cells, and more particularly the invention relates to a solar cell structure which is efficient in operation and economical to manufacture.
- the photovoltaic cell comprises a substrate of semiconductive material having a p-n junction defined therein.
- the p-n junction is formed near a surface of the substrate which receives impinging radiation. Radiated photons create mobile carriers (holes and electrons) and the substrate which can be directed to an electrical circuit outside of the cell. Only photons having at least a minimum energy level (e.g., 1.1 electron volt for silicon) can generate an electron-hole pair in the semiconductor pair.
- Photons having less energy are either not absorbed or are absorbed as heat, and the excess energy of photons having more than 1.1 electron volt energy (e.g. photons have a wavelength of 1.1 ⁇ m and less) create heat. These and other losses limit the efficiency of silicon photovoltaic cells in directly converting solar energy to electricity to less than 30%.
- Solar cells with interdigitated contacts of opposite polarity on the back surface of the cell are known and have numerous advantages over conventional solar cells with front side metal grids and blanket or grid metallized backside contacts, including improved photo-generation due to elimination of front grid shading, much reduced grid series resistance, and improved “blue” photo-response since heavy front surface doping is not required to minimize front contact resistance because there are no front contacts.
- the back-contact cell structure allows simplified module assembly due to coplanar contacts. See Swanson U.S. Pat. No. 4,927,770 for example.
- IBC solar cells While interdigitated back-contact (IBC) solar cells have been fabricated, cost considerations have prevented the IBC solar cell from being commercialized.
- conventional microelectronics (integrated circuit) processing has been employed in fabricating IBC solar cells, including the use of backside diffusions, contacts, and metal lines fabricated by conventional microelectronics photolithography, thin film metallization, and etching processes. This fabrication process is capable of producing high efficiency solar cells, but the process is not cost effective for application in conventional low-cost, flat-plate solar panels.
- IBC solar cell The key problem with practical realization of an IBC solar cell by this process is the high cost of fabrication, including the use of photoresist materials, processing and mask alignment, and the use of thick metal conductor deposition by vacuum evaporation or sputtering. Further, the processing must be carried out in a clean room environment. Thus IBC solar cells fabricated using these methods have been restricted to application in high concentration solar cells or in very high value one-sun applications.
- a solar cell structure is provided which can be readily manufactured using alternative processing techniques which are less expensive than microelectronic circuit processing.
- a silicon cell having a first major surface for receiving solar radiation has an opposing or backside surface in which p-doped and n-doped regions are formed in a spaced parallel arrangement.
- the p and n regions can be in offset planes or in the same plane.
- Interdigitated metal contacts respectively contact the p and n doped regions.
- the doped regions can be formed by first applying one dopant type to the entire back side of the cell by high temperature diffusion. Next, a patterned etch resist is applied to the cell by a low cost printing technology. This is followed by selective etching of a thermal oxide and doped region, and then by high temperature diffusion of the other dopant and thermal growth of a silicon oxide layer.
- arrays of small contact openings are fabricated in the silicon oxide layer by using a patterned etch resist and chemical etching.
- a seed layer metal stack is then sputtered on the back side of the cell.
- the first metal in the stack provides ohmic contact to the silicon through the contact openings in the oxide and acts as an infrared reflector.
- a second metal layer acts as a diffusion barrier and adhesion layer.
- a top metal layer then forms a base to initiate plating.
- a plating resist is then applied over the seed layer, and metal is plated to the cell to build up thickness for the metal grid lines. Finally, the plating resist is stripped, and the metal seed layer between the grid lines is removed by chemical etching.
- the first surface of the cell is preferably textured, as is conventional in solar cells.
- the texturing is preferably accomplished chemically.
- An antireflection nitride layer is then applied over the textured surface to assist in the coupling of light energy into the solar cell and hence improve efficiency.
- FIGS. 1-15 are side views in section illustrating steps in fabricating a solar cell in accordance with one embodiment of the invention.
- FIG. 16 is a perspective view illustrating the back side of a finished solar cell fabricated in accordance with the invention.
- a solar cell in accordance with the invention is preferably manufactured in a single crystalline silicon substrate having a (100) crystalline orientation or in a multi-crystalline silicon substrate with minority carrier lifetime greater than 200 microseconds.
- FIG. 1 is a side view in section of such a wafer 10 which is doped n-type in the resistivity range of 1-20 ohm/cm and with a thickness of approximately 200 ⁇ m.
- the first step of the process is caustic etching of the wafer using KOH or NaOH to remove solid damage from ingot wafering. Typically, 20-50 ⁇ m of silicon are removed. After the caustic etch, the wafers are cleaned using a standard pre-diffusion, wet cleaning sequence.
- the wafer is blanket-diffused on both sides in diffusion boats in a high temperature diffusion furnace.
- a liquid boron dopant source (BBr 3 ) is used and a dopant drive forms a p+ layer 12 .
- the dopant drive is followed by growth of a thermal silicon oxide layer 14 .
- the junction depth of layer 12 is 1.8 ⁇ 0.5 ⁇ m and the resultant sheet resistance is 16 ⁇ 4 ohms per square.
- the thickness of thermal oxide layer 14 is 2,500 ⁇ 200 A.
- the polarity of the diffusions can be reversed, with n+ diffusion as the first step instead of a p+ diffusion.
- solid or gaseous dopant sources can be used as diffusion sources.
- the boron dopant can be diffused on one side of the wafer only by back-to-back loading of wafers into the diffusion boats.
- a patterned etch resist 16 is applied over the back side thermal oxide 14 .
- the etch resist is directly patterned on the structure by screen-printing, pad printing, inkjet printing, or roll transfer printing. Resists are then either thermal or UV-cured.
- openings in the thermal oxide are chemically etched in the areas not covered by the printed etch resist 16 .
- the resist is removed in a caustic solution with the width of the openings being about 0.7 mm and the pitch of the openings being about 2 mm.
- Another caustic etch (concentrated KOH) is then used to etch about 3 ⁇ m of silicon completely through layer 12 and the diffusion junction of FIG. 2 , as taught in U.S. Pat. No. 5,053,083, for example.
- the boron diffusion on the front side of the wafer is also removed during this etch.
- the wafers are then diffused on both sides in a high temperature diffusion furnace to form n+ layer 18 on the back side and n+ layer 20 on the top surface as shown in FIG. 5 .
- a liquid phosphorous source POCl 3
- the polarity of the diffusions can be reversed, consistent with FIG. 2 , with p+ diffusion instead of n+ diffusion.
- solid or gaseous dopant sources can be used as diffusion sources, and the wafers can be diffused on one side only by back-to-back loading of the wafers in the diffusion boats.
- the high temperature diffusion furnace also forms thermally grown oxide layer 22 over n+ region 18 and oxide layer 24 over layer 20 .
- the junction depth of regions 18 , 20 is 0.9 ⁇ 0.2 ⁇ m
- the resultant sheet resistance is 40 ⁇ 13 ohms/square.
- the thickness of the thermal oxide layers 22 , 24 is 950 ⁇ 150 .
- n+ dopants such as As or Sb can be employed.
- a boron or phosphorous silicate glass layer of opposite polarity from the dopant applied in step 2, can be applied to the back side of the side using atmospheric pressure chemical vapor deposition (APCVD) to act as a dopant source.
- APCVD atmospheric pressure chemical vapor deposition
- the dopant is diffused into the silicon in a high temperature diffusion furnace. If an APCVD dopant source is used as in FIG. 2 , then both dopant types can be diffused simultaneously.
- an unpatterned etch resist 26 is applied over the back side of substrate 10 and is used to protect the back side oxide 14 , 22 from subsequent etching.
- the etch resist is directly applied on the substrate by screen printing, pad printing, inkjet printing, or a roll transfer printing.
- the resist can then be cured either thermally or by UV.
- a textured surface is next formed in the top surface of substrate 10 .
- (100) oriented single crystal wafers are used and the oxide on the top surface is removed by chemical etching.
- the back side is protected during this etch by the etch resist 26 applied in FIG. 6 .
- the back side etch resist is removed in a caustic solution.
- Another caustic solution KOH/IPA is then used to preferentially expose the (111) planes of silicon on the front side of substrate 10 , creating a textured surface with square pyramidal features that have a random distribution of apexes and heights, with heights typically ranging from 1-10 ⁇ m. This random texture greatly assists in the coupling of light energy into the solar cell and hence improves efficiency.
- texture can also be created by a number of alternative methods, including acid etching, plasma etching, and mechanical abrasion. Following the texturing, the wafers are cleaned using a standard pre-diffusion wet cleansing sequence.
- the wafers are diffused and oxidized on both sides in a high temperature diffusion furnace, creating doped layer 28 and thermally grown oxide layer 30 on the textured surface.
- a liquid phosphorous dopant source POCl 3
- the diffusion serves to create a front surface electrical field and good passivation of the silicon-silicon dioxide interface. The combined effect is very low surface recombination velocity, which is essential for high efficiency in the solar cell design.
- solid or gaseous dopant sources can be used as diffusion sources.
- the wafers can be diffused on the front side on a by back-to-back loading of wafers in the diffusion boats.
- n+ dopants such as As or Sb can be used.
- a p-type dopant such as boron
- boron can be used to create a floating junction, which provides good passivation of the silicon-silicon dioxide interface.
- a boron or phosphorous silicate glass layer can be used as a dopant source.
- the junction depth is 0.38 ⁇ 0.1 ⁇ m and the resultant sheet resistivity is 115 ⁇ 15 ohms/square.
- the thickness of the thermal oxide layer 30 is 350 ⁇ 100 .
- this step can be eliminated, altogether or by using another technique, such as a fixed change in a SiN ARC, to create good surface passivation, or by moving the texture etch before the doping mask and using a single n+ diffusion and oxidation to diffuse both sides of the wafer.
- another technique such as a fixed change in a SiN ARC, to create good surface passivation, or by moving the texture etch before the doping mask and using a single n+ diffusion and oxidation to diffuse both sides of the wafer.
- an antireflection coating (ARC) 32 such as SiN or TiO 2 is then applied to the front surface of the solar cell. This coating assists in the coupling of light energy into the solar cell and hence improves efficiency.
- the ARC can be deposited after deposition of the seed metal stack described in FIG. 12 , infra. Further, the ARC can be applied to both sides of substrate 10 .
- the patterned etch resist 40 is applied over the back side thermal oxide by screen printing, pad printing, inkjet printing, or a roll transfer printing. Resist 40 is then either thermal or UV cured. Depending on the ARC material, a patterned etch resist may be applied over the front of the solar cell to protect the ARC from subsequent etching.
- arrays of small contact openings 42 are chemically etched in the thermal oxide over both the p and n regions 12 , 18 , then the etch resist is stripped using a caustic solution.
- the total contact area as a fraction of the entire back side is typically less than 5%. Reducing the metal to semiconductor contact area greatly reduces photo-generated carrier recombination at the back surface of the solar cell, and hence increases cell efficiency.
- the contact mask and contact oxide etch can be eliminated from the process and contact openings can be formed in the oxide layer by other methods, such as laser ablation of oxide, or direct printing of chemical pastes that etch the oxide. Laser ablation and printed chemical paste can be used in the steps of FIG. 4 , also.
- a thin (approximately 400 nm) 3-layer seed metal stack 44 is sputtered or evaporated onto the solar cell for contacts to p+ region 12 and n+ region 18 .
- the first layer of the stack aluminum in the preferred embodiment, makes ohmic contact to the semiconductor material and acts as a back surface reflector.
- the seed layer covers mostly silicon oxide, except in small contact openings where it contacts the silicon.
- the metallized silicon oxide stack is designed to be an excellent infrared reflector, reflecting light back into the cell and effectively multiplying the absorption path length.
- the front surface texture in combination with the back surface reflector can increase the optical path length to more than 20 times the wafer thickness. This design feature leads to higher photo-generated current in the solar cell.
- a second layer, titanium-10%/tungsten-90% (TiW) in the preferred embodiment acts as a diffusion barrier to metals and other impurities.
- a third layer, copper (Cu) in the preferred embodiment is used to provide a base for initiating electroplating of metal. Because the seed layer is not required to have significant current-carrying capacity, it can be made very thin. Hence, the manufacturing cost of depositing the seed layer is low.
- the metal layer comprises a Al(Si)/TiW/Cu stack, where the aluminum provides ohmic contact and back surface reflectance, TiW acts as the barrier layer, and Cu acts as the plating base.
- chromium (Cr) can be used as the barrier layer instead of TiW.
- the metal semiconductor contact can be annealed in a forming gas atmosphere, preferably at 400° C. Alternatively, the contact anneal step can be eliminated.
- a patterned plating resist 48 is applied to the seed layer.
- the plating resist is directly patterned on the solar cell by screen printing, pad printing, inkjet printing, or a roll transfer screening.
- the plating resist is directly patterned on the wafer by screen printing.
- the plating resist is cured to harden it against the subsequent electroplating solution. Metal does not plate in areas covered by the plating resist.
- the thickness of the metal layer in regions without plating resist is greatly increased by electroplating or electroless plating a good electrical conductor to act as low series resistance metal grid lines 50 , 52 .
- a good electrical conductor to act as low series resistance metal grid lines 50 , 52 .
- about 20 ⁇ m of copper are electroplated.
- a thin capping layer, such as tin or silver, may be plated after the copper to improve solderability and/or to prevent etching of plated areas during etch back.
- Preferably about 7 ⁇ m of tin are electroplated.
- plating resist 48 is stripped and the thin seed metal 44 between the metal grid lines is removed by chemical etching.
- the etch back chemistries are chosen such that they selectively etch the seed metal stack components over the plated metal capping layer.
- a small amount of metal on the plated conductive lines may be sacrificed during etch back if an etch resistant metal capping layer is not used, or if the seed layer etch chemistries are not selective.
- a resist pattern can be used to cover the contact areas and then remove all exposed seed layer by etching thereafter the resist is removed, and the thickness of the metal layer in the contact areas is increased by plating as in FIG. 14 .
- the final structure is shown in perspective view in FIG. 16 showing the interdigitated metal contacts 50 , 52 to the p+ regions and n+ regions, respectively, of the solar cell.
- a solar cell fabricated in accordance with the invention is economical to manufacture through use of printing technology.
- the stacked metal contacts provide good ohmic connection and reflection properties on the back side of the cell, and the textured surface on the front side provides greater capture of photons and increased operating efficiency for the cell.
- a number of alternative processing steps and structural elements have been suggested for the preferred embodiment.
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Abstract
Description
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Application Number | Priority Date | Filing Date | Title |
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US13/013,628 US8399287B1 (en) | 2003-04-10 | 2011-01-25 | Method of manufacturing solar cell |
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