US8264666B2 - Exposure apparatus, exposure method, and method of manufacturing device - Google Patents
Exposure apparatus, exposure method, and method of manufacturing device Download PDFInfo
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- US8264666B2 US8264666B2 US12/692,443 US69244310A US8264666B2 US 8264666 B2 US8264666 B2 US 8264666B2 US 69244310 A US69244310 A US 69244310A US 8264666 B2 US8264666 B2 US 8264666B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Definitions
- the present invention relates to a scanning-type exposure apparatus that transfers a pattern onto a substrate that has photosensitivity.
- Liquid crystal display panels are often used as display devices such as personal computers and displays. Recently, there has been devised a method of manufacturing a display panel by patterning with a method of photolithography a transparent thin film electrode on a flexible polymers sheet (photosensitive substrate). As an exposure apparatus that is used in this photolithography step, an exposure apparatus that transfers a mask pattern onto a belt-shaped (strip-shaped) photosensitive substrate that is transported by roll-to-roll (hereinbelow referred to as a roll-to-roll type exposure apparatus) has been proposed (for example, refer to Japanese Patent Application Publication No. 2007-114385A).
- a purpose of some aspects of the present invention is to provide an exposure apparatus that can achieve an improvement in throughput related to scanning and exposure to, for example, a belt-shaped photosensitive substrate that is transported by roll-to-roll, an exposure method, and a method of manufacturing a device.
- an exposure apparatus is provided that is constituted by a moving mechanism that moves a first substrate that has photosensitivity in a first heading along a first direction and that moves a second substrate that has photosensitivity in a second heading that is opposite to the first heading along the first direction; a stage mechanism that holds a mask that has a pattern, and moves in a third heading along a second direction in synchronization with the movement in the first direction of the first substrate and the second substrate; and a projection optical system that receives light via the pattern, forms a first projection image of the pattern on the first substrate so that the third heading on the mask and the first heading on the first substrate optically correspond, and forms a second projection image of the pattern on the second substrate so that the third heading on the mask and the second heading on the second substrate optically correspond.
- an exposure apparatus is provided that is constituted by a moving mechanism that moves a first portion of a belt-shaped substrate that has photosensitivity in a first heading along a first direction and that moves a second portion of the substrate in a second heading that is opposite to the first heading along the first direction; a stage mechanism that holds a mask that has a pattern, and moves in a third heading along a second direction in synchronization with the movement in the first direction of the first portion and the second portion; and a projection optical system that receives light via the pattern, forms a first projection image of the pattern on the first portion so that the third heading on the mask and the first heading on the first portion optically correspond, and forms a second projection image of the pattern on the second portion so that the third heading on the mask and the second heading on the second portion optically correspond.
- an exposure method includes a step that moves a first substrate that has photosensitivity in a first heading along a first direction and that moves a second substrate that has photosensitivity in a second heading that is opposite to the first heading along the first direction; a step that moves a mask that has a pattern in a third heading along a second direction in synchronization with the movement in the first direction of the first substrate and the second substrate; and a step that receives light from the pattern, forms a first projection image of the pattern on the first substrate so that the third heading on the mask and the first heading on the first substrate optically correspond, and forms a second projection image of the pattern on the second substrate so that the third heading on the mask and the second heading on the second substrate optically correspond.
- an exposure method includes a step that moves a first portion of a belt-shaped substrate that has photosensitivity in a first heading along a first direction and that moves a second portion of the substrate in a second heading that is opposite to the first heading along the first direction; a step that moves a mask that has a pattern in a third heading along a second direction in synchronization with the movement in the first direction of the first portion and the second portion; a step that receives light from the pattern and forms a first projection image of the pattern on the first portion so that the third heading on the mask and the first heading on the first portion optically correspond, and a step that receives light from the pattern and forms a second projection image of the pattern on the second portion so that the third heading on the mask and the second heading on the second portion optically correspond.
- a method of manufacturing a device includes a step that, using the exposure apparatus of the present invention, transfers the pattern to a substrate; a step that develops the substrate to which the pattern has been transferred, and forms on the substrate a transfer pattern layer of a shape corresponding to the pattern; and a step that processes the substrate via the transfer pattern layer.
- the exposure apparatus of the present invention it is possible to simultaneously perform scanning and exposure of a first projection image to a first portion of a belt-shaped photosensitive substrate that moves in first heading and scanning and exposure of a first projection image to a second portion of a belt-shaped photosensitive substrate that moves in second heading by causing a mask to move once in a third heading. Also, by repeating reciprocal movement of the mask along a first direction over a plurality of times, it is possible to continuously form in an alternating manner on a substrate that moves continuously along a predetermined path a region to which the first projection image has been transferred and a region to which the second projection image has been transferred. As a result, in the exposure apparatus of the present invention, it is possible to improve the throughput of the scanning and exposure to, for example, a belt-shaped photosensitive substrate that is conveyed by roll-to-roll.
- FIG. 1 is a drawing that schematically shows the constitution of the exposure apparatus of the embodiment of the present invention.
- FIG. 2 is a drawing that schematically shows the essential elements of the moving mechanism that conveys the belt-shaped photosensitive substrate by roll-to-roll.
- FIG. 3 is a drawing that schematically shows the constitution of the projection optical system of the present embodiment.
- FIG. 4 is a drawing that describes the operation of the group of deflecting members.
- FIG. 5 is a drawing that shows the appearance of the first imaging region and the second imaging region that are formed in a row.
- FIG. 6 is a drawing that describes the constitution and operation of the splitting and reflecting portion in the present embodiment.
- FIG. 7 is a drawing that describes the correspondence relationship of the plurality of reflecting portions of the splitting and reflecting portion and the plurality of light sources in the illumination pupil.
- FIG. 8 is a drawing that describes the scanning and exposure operation in the present embodiment.
- FIG. 9 is a drawing that describes the constitution and operation of the splitting and reflecting portion in the first modification.
- FIG. 10 is a drawing that describes the constitution and operation of the splitting and reflecting portion in the second modification.
- FIG. 11 is a drawing that describes the constitution and operation of the splitting and reflecting portion in the third modification.
- FIG. 12 is a flowchart that shows the manufacturing steps of a semiconductor device.
- FIG. 13 is a flowchart that shows the manufacturing steps of a liquid crystal device.
- FIG. 1 is a drawing that schematically shows the constitution of the exposure apparatus of the embodiment of the present invention.
- the present invention is applied to a roll-to-roll type exposure apparatus that, while relatively moving a mask M and a belt-shaped sheet SH with respect to a projection optical system PL, projection-exposes (transfers) a pattern of a mask M onto a sheet SH.
- the Z axis is set to the normal direction to the transfer surface (photosensitive surface, exposed surface) of the sheet SH as the photosensitive substrate, the Y axis to the direction parallel to the page surface of FIG. 1 in the plane that is parallel to the transfer surface of the sheet SH, and the X axis to the direction perpendicular to the page surface of FIG. 1 in the plane that is parallel to the transfer surface of the sheet SH.
- the exposure apparatus of the present embodiment is provided with an illumination optical system IL that illuminates the pattern region of the mask M, a mask stage MS that holds and moves the mask M that has the pattern, a projection optical system PL that forms a magnified image of the pattern of the mask M on the sheet SH, a moving mechanism SC that moves (conveys) the sheet SH according to a roll-to-roll format, a drive system DR that drives the mask stage MS and the moving mechanism SC, and a main control system CR that collectively controls the operation of the drive system DR and the like.
- the sheet SH is a flexible (provided with flexibility) belt-shaped polymer sheet to which a photoresist (photosensitive material) is applied.
- illumination light for exposure is supplied from a light source LS.
- exposure light it is possible to use i line (365 nm wavelength) light selected from the emitted light of an ultra-high pressure mercury lamp, a pulse light that is the third harmonic of a YAG laser (355 nm wavelength), KrF excimer laser light (248 nm wavelength), and the like.
- the illumination optical system IL is provided with, in the order of the incoming light, a collimator lens 20 , a fly-eye lens 21 , a condenser optical system 22 , a mask blind 23 as a variable visual field aperture, and an illumination imaging optical system 24 ( 24 a and 24 b ).
- the light that is emitted from the light source LS illuminates an illumination region IR on the mask M via the illumination optical system IL.
- the illumination region IR has a predetermined external shape that extends in an elongated manner in the X direction.
- Light from the illumination region IR of the mask M forms via the projection optical system PL a first projection image of the pattern in the illumination region IR on a first imaging region ER 1 and forms a second projection image of the pattern in the illumination region IR on a second imaging region ER 2 that is separated by an interval in the Y direction from the first imaging region ER 1 .
- the projection optical system PL forms the first imaging region ER 1 in which the first projection image of the pattern is formed on the sheet SH that moves in the ⁇ X direction, and forms the second imaging region ER 2 in which the second projection image of the pattern is formed on the sheet SH that moves in the +X direction.
- the projection optical system PL is telecentric to the mask M side and the sheet SH side, and has a magnifying power from the mask M side to the sheet SH side.
- the shape of the imaging regions ER 1 and ER 2 is a shape that magnifies the shape of the illumination region IR by the projection magnification ⁇ of the projection optical system PL.
- the illumination region IR is assumed to be a region of an elongated rectangular shape along the X direction.
- the first imaging region ER 1 and the second imaging region ER 2 become regions of an elongated rectangular shape along the Y direction that is perpendicular to the X direction that is the lengthwise direction of the illumination region IR.
- the shape of the illumination region IR, and by extension the shape of the imaging regions ER 1 and ER 2 are variably set corresponding to the shape of the variable opening portion (light transmission portion) of the mask blind 23 in the illumination optical system IL
- the mask M is adsorptively held on the mask stage MS via a mask holder (not illustrated).
- a mask side laser interferometer (not illustrated) which has a well-known constitution is arranged on the mask stage MS.
- the mask-side laser interferometer measures the position in the X direction and the position in the Y direction of the mask stage MS, and the rotation angle about the Z axis, and supplies the measuring result to main control system CR.
- the main control system CR controls via the drive system DR the position in the X direction of the mask stage MS, the position and speed in the Y direction as the scan direction, and the rotation angle about the Z axis.
- the sheet SH is conveyed along a predetermined path by the working of the moving mechanism SC that is provided with a series of rolls.
- the moving mechanism SC has a first straight path SCa that extends in a straight line shape along the X direction, a second straight path SCb that extends in a straight line shape along the X direction separated by an interval in the Y direction from the first straight path SCa, and an inverted path SCc that connects the first straight path SCa and the second straight path SCb.
- the belt-shape sheet SH that has flexibility, after moving in the heading of the ⁇ X direction along the first straight path SCa, advances to the inverted path SCc.
- the first imaging region ER 1 is formed on the sheet SH that moves in the heading of the ⁇ X direction along the first straight path SCa.
- the sheet SH that has entered the inverted path SCc after passing the inverted roll SCd that is disposed in the center of the inverted path SCc and that rotates centered on an axial line that extends in the Z direction, enters the second straight path SCb.
- the sheet SH that has entered the second straight path SCb moves in the heading of the +X direction.
- the second imaging region ER 2 is formed on the sheet SH that moves in the heading of the +X direction along the second straight path SCb.
- the sheet SH is made to move at velocity V in the heading of the ⁇ X direction in the first straight path SCa and the sheet SH is made to move at velocity V in the heading of the +X direction in the second straight path SCb.
- FIG. 3 is a drawing that schematically shows the constitution of the projection optical system of the present embodiment.
- the projection optical system PL has an intermediate imaging optical system GM that forms a first intermediate image I 1 and a second intermediate image I 2 of the pattern that is illuminated by the illumination region IR in the pattern region of the mask M, a first imaging optical system G 1 that forms a first projection image of the pattern in the first imaging region ER 1 on the sheet SH based on the light from the first intermediate image I 1 , and a second imaging optical system G 2 that forms a second projection image of the pattern in the second imaging region ER 2 on the sheet SH based on the light from the second intermediate image I 2 .
- the intermediate imaging optical system GM makes optically conjugate the position of the pattern region of the mask M and the formation position of the first intermediate image I 1 and the formation position of the second intermediate image I 2 .
- the first imaging optical system G 1 makes optically conjugate the formation position of the first intermediate image I 1 and the position of the first imaging region ER 1 , and forms the first projection image of the pattern in the first imaging region ER 1 on the sheet SH that moves in the ⁇ X direction along the first straight path SCa.
- the second imaging optical system G 2 makes optically conjugate the formation position of the second intermediate image I 2 and the position of the second imaging region ER 2 , and forms the second projection image of the pattern in the second imaging region ER 2 on the sheet SH that moves in the +X direction along the second straight path SCb.
- the mask M is arranged on the mask stage MS so that the pattern region may be mostly in agreement with the object surface OBJ of the projection optical system PL.
- the sheet SH is conveyed by the moving mechanism SC along a track whose surface (photosensitive surface) mostly corresponds with the image plane IMG of the projection optical system PL.
- the intermediate imaging optical system GM has a positive lens group Lp that light from the pattern region that is illuminated by the illumination region IR enters, and a splitting and reflecting portion 10 that splits light from the positive lens group Lp into a first light and a second light that advance in mutually separate directions that sandwich the optical axis AXp of the positive lens group Lp and reflects the first light and the second light toward the positive lens group Lp.
- the specific constitution and action of the splitting and reflecting portion 10 shall be described below.
- a first deflecting member M 1 , a second deflecting member M 2 , and a third deflecting member M 3 are arranged in the order of incidence of light.
- a fourth deflecting member M 4 , a fifth deflecting member M 5 , and a sixth deflecting member M 6 are arranged in the order of incidence of light.
- the deflecting members M 1 to M 6 are, for example, reflecting mirrors that have a planar reflecting surface.
- the action of the deflecting members M 1 to M 6 shall be described, focusing on light L 1 that is emitted along the optical axis AXp from the illumination region IR.
- the light L 1 that is emitted along the optical axis AXp from the illumination region IR passes through the positive lens group Lp and is then reflected by the splitting and reflecting portion 10 , and is split into a first light L 11 that advances in a diagonal upper-right heading (first heading) and a second light L 2 that advances in a diagonal upper-left heading (second heading) in the page surface of FIG. 3 .
- the first light L 11 that is reflected by the splitting and reflecting portion 10 enters the deflecting member M 1 along the +Z direction after passing through the positive lens group Lp, and it is deflected in the +Y direction by the deflecting member M 1 .
- the first light L 11 that is deflected in the +Y direction by the deflecting member M 1 forms, as the first intermediate image I 1 , for example an image of nearly equal magnification of the mask pattern.
- the first light that advances along the +Y direction from the first intermediate image I 1 , as shown in FIG. 4 after being deflected in the +X direction by the deflecting member M 2 and deflected in the ⁇ Z direction by the deflecting member M 3 , reaches the first imaging region ER 1 on the sheet SH that moves in the ⁇ X direction along the first straight path SCa via the first imaging optical system G 1 .
- a magnified image of the mask pattern is formed as the first projection image in the first imaging region ER 1 having an elongated rectangular shape along the Y direction. Note that FIG. 4 shows only the lens LP 1 that is disposed closest to the mask side, among the positive lens group Lp.
- the second light L 12 that is reflected by the splitting and reflecting portion 10 after passing through the positive lens group Lp, enters the deflecting member M 4 along the +Z direction, and it is deflected in the ⁇ Y direction by the deflecting member M 4 .
- the second light L 12 that is deflected in the ⁇ Y direction by the deflecting member M 4 forms an image of nearly equal magnification of the mask pattern similarly to the first intermediate image I 1 .
- the second light that advances along the ⁇ Y direction from the second intermediate image I 2 as shown in FIG.
- a magnified image of the mask pattern is formed as the second projection image in the second imaging region ER 2 having an elongated rectangular shape along the Y direction.
- the first projection image and the second projection image have a shape that magnifies the mask pattern by projection magnification ⁇ of the projection optical system PL. Then, as clearly shown in FIG. 4 , the first projection image is formed with an orientation that rotates the mask pattern +90 degrees about the Z-axis, and the second projection image is formed with an orientation that rotates the mask pattern ⁇ 90 degrees. That is, the first projection image and the second projection image have the same shape and size, but are mutually reversed in relation to the X direction and the Y direction.
- the position C 1 of a light beam that is emitted from the illumination region IR along the optical axis AXp and deflected in the ⁇ Z direction by the third deflecting member M 3 and the optical axis AX 1 of the first imaging optical system G 1 agree
- the position C 2 of a light beam that is emitted from the illumination region IR along the optical axis AXp and deflected in the ⁇ Z direction by the sixth deflecting member M 6 and the optical axis AX 2 of the second imaging optical system G 2 agree.
- the first imaging region ER 1 and the second imaging region ER 2 are formed in a row in the Y direction. Note that in FIG.
- the dashed line circle IF 0 shows the incidence side visual field of the projection optical system PL
- the dashed line circles IF 1 and IF 2 show the entry side visual field of the imaging optical systems G 1 and G 2
- the dashed line circles EF 1 and EF 2 show the emission side visual field of the imaging optical systems G 1 and G 2 .
- the splitting and reflecting portion 10 has a plurality of first reflecting portions 10 a and a plurality of second reflecting portions 10 b arranged at the focal position of the positive lens group Lp or in the vicinity thereof, as shown in FIG. 6 .
- the focal position of the positive lens group Lp is the position at which the parallel beams are condensed (that is, the rear focal position), in the case of parallel light beams being input from the mask M side to the positive lens group Lp.
- the first reflecting portion 10 a and the second reflecting portion 10 b are arranged over a concave curved surface (for example, a spherical surface) facing the positive lens group Lp, and are alternately provided in the Y direction.
- the first reflecting portion 10 a and the second reflecting portion part 10 b are arranged along a surface that is parallel to the XY plane, and are alternately provided along the Y direction.
- the first reflecting portion 10 a for example, has a plane-shaped reflecting surface, and the normal that extends from the reflecting surface thereof to the outer side faces diagonally upward to the right in FIG. 6 .
- the second reflecting portion 10 b for example, has a plane-shaped reflecting surface, and the normal that extends from the reflecting surface thereof to the outer side faces diagonally upward to the left in FIG. 6 .
- the light that entered the first reflecting portion 10 a parallel with the optical axis AXp of the positive lens group Lp (by extension, the optical axis of the intermediate imaging optical system GM) is reflected diagonally upward to the right in FIG. 6 by the reflecting surface thereof.
- the light that is reflected by the plurality of first reflecting portions 10 a turns into the above-mentioned first light, and passes through the positive lens group Lp and the first deflecting member M 1 to form the first intermediate image I 1 .
- the light that entered the second reflecting portion 10 b parallel with the optical axis AXp is reflected diagonally upward to the left in FIG. 6 by the reflecting surface thereof.
- the light that is reflected by the plurality of second reflecting portions 10 b turns into the above-mentioned second light, and passes through the positive lens group Lp and the fourth deflecting member M 4 to form the second intermediate image I 2 . That is, in the splitting and reflecting portion 10 , the first reflecting portions 10 a generate the first light by reflecting the light that entered from the positive lens group Lp diagonally upward to the right in FIG. 6 , and the second reflecting portions 10 b generate the second light by reflecting the light that entered from the positive lens group Lp diagonally upward to the left in FIG. 6 .
- the reflecting portions 10 a and 10 b of the splitting and reflecting portion 10 are arranged at the rear focal position of the positive lens group Lp or in the vicinity thereof (that is, the pupil position of the projection optical system PL or the vicinity thereof), and as a result are arranged at an optically conjugate position with the rear focal position of the fly-eye lens 21 in the illumination optical system IL (that is, the position of the illumination pupil of the illumination optical system IL) or in the vicinity thereof.
- the fly-eye lens 21 is an optical element that consists of a plurality of lens elements 21 a having positive refractive power that are, for example, arranged vertically and horizontally and densely, as shown in the upper side of FIG. 7 .
- Each lens element 21 a corresponding to the rectangular illumination region IR with an elongated rectangular shape in the X direction, has a cross-sectional shape with a similarly elongated rectangular shape in the X direction.
- the rectangular plane of incidence of each lens element 21 a constitutes a unit wavefront splitting surface of the fly-eye lens 21 as a wavefront splitting type optical integrator.
- the flux of light that has entered the fly-eye lens 21 is split in a two-dimension manner by the plurality of lens elements 21 a , and forms one light source 21 b at the rear focal surface of each lens element 21 a (and by extension, the rear focal plane of the fly-eye lens 21 ) or the vicinity thereof.
- the mask M (and by extension the sheet SH that is arranged at the image plane of the projection optical system PL) that is arranged in the irradiated surface of the illumination optical system IL (the object surface of the projection optical system PL) is Koehler-illuminated.
- the images of the plurality of light sources 21 b are formed on the reflecting surfaces of the plurality of reflecting portions 10 a and 10 b of the splitting and reflecting portion 10 that is disposed at the rear focal position of the positive lens group Lp or the vicinity thereof.
- the illumination optical system IL preferably forms a plurality of light sources 21 b corresponding to the arrangement of the plurality of first reflecting portions 10 a and the plurality of second reflecting portions 10 b .
- the reflecting portions 10 a and 10 b preferably have a reflecting region of a size that encloses the conjugate image on the reflecting portions 10 a and 10 b of the light source 21 b.
- a rectangular pattern area PA in which, for example, a circuit pattern of, for example, a display panel is formed is provided on the mask M.
- the sheet S that is a belt-shaped (strip-shaped) photosensitive substrate is conveyed at a constant speed along a predetermined path by the operation of the moving mechanism SC.
- rectangular shot regions SR 1 and SR 2 that are enlargements of the pattern region PA of the mask M by the projection magnification ⁇ of the projection optical system PL are formed in turn at a fixed interval on the sheet SH.
- a shot region in which the pattern of the mask M is to be transferred or has been transferred via the first imaging optical system G 1 of the projection optical system PL is expressed by reference numeral SR 1
- a shot region in which the pattern of the mask M is to be transferred or has been transferred via the second imaging optical system G 2 is expressed by reference numeral SR 2 .
- the shot region SR 1 and the shot region SR 2 are alternately formed along the lengthwise direction of the sheet SH.
- the dimension of each shot region SR 1 and SR 2 along the lengthwise direction of the sheet SH is Sx, and the interval between a mutually adjacent pair of shot regions SR 1 and SR 2 is Gx.
- the Y direction that is the scan movement direction of the mask M and the X direction that is the scan movement direction of the sheet SH are made to agree in the horizontal direction of the paper surface of FIG. 8 .
- the pattern of the mask M is scanned and exposed on the shot region SR 1 that passes directly under the first imaging optical system G 1 of the projection optical system PL, that is, the shot region SR 1 on the sheet SH that moves in the ⁇ X direction along the first straight path SCa.
- the pattern of the mask M is scanned and exposed on the shot region SR 2 that passes directly under the second imaging optical system G 2 of the projection optical system PL, that is, the shot region SR 2 on the sheet SH that moves in the +X direction along the second straight path SCb, simultaneously with the scanning and exposing to the shot region SR 1 in the first straight path SCa.
- the mask M (and by extension the mask stage MS) is moved at a required speed in the +Y direction so that the pattern area PA is scanned by the illumination region IR, from a start position at which the illumination region IR is positioned at the edge portion on the +Y direction side of the pattern area PA until a completion position at which it reaches the edge portion on the ⁇ Y direction side.
- the sheet SH moves in the ⁇ X direction along the first straight path SCa so that the shot region SR 1 is scanned by the first imaging region ER 1 , from a start position at which the first imaging region ER 1 is positioned at the edge portion on the ⁇ X direction side of the shot region SR 1 to a completion position at which it reaches the edge portion on the +X direction side.
- the sheet SH moves in the +X direction along the second straight path SCb so that the shot region SR 2 is scanned by the second imaging region ER 2 , from a start position at which the second imaging region ER 2 is positioned at the edge portion on the +X direction side of the shot region SR 2 to a completion position at which it reaches the edge portion on the ⁇ X direction side. That is, in synchronization with the scanning of the pattern area PA by the illumination region IR, the scanning and exposure to the shot region SR 1 and the scanning and exposure to the shot region SR 2 are performed in parallel and simultaneously. Stated in other words, while the mask M is being moved in the heading of the +Y direction, the first projection image and the second projection image of the pattern of the mask M are respectively formed on the shot regions SR 1 and SR 2 .
- the mask M is backward moved in the ⁇ Y direction so that the illumination region IR moves from the edge portion at the ⁇ Y direction side of the pattern area PA to the edge portion at the +Y direction side of the pattern area PA, that is, so that the illumination region IR returns from the end position to the start position of the scan exposure.
- a shutter for blocking the image forming flux is inserted in the light path immediately after the mask M, so that the projection image of the mask pattern is not formed in the imaging regions ER 1 and ER 2 .
- the projection image of the mask pattern may not be formed in the imaging regions ER 1 and ER 2 .
- the shot region SR 2 which is the shot region following the shot region SR 1 immediately after scanning and exposure is completed and is set for transfer of the second projection image of the mask pattern, passes directly under the first imaging optical system G 1 without undergoing scanning and exposure.
- the shot region SR 1 during scanning and exposure and the shot region SR 1 after scanning and exposure in the first straight path SCa are shown by solid lines, and the shot region SR 2 that is to pass directly under the first imaging optical system G 1 without undergoing scanning and exposure and the shot region SR 2 that has passed directly under the first imaging optical system G 1 without undergoing scanning and exposure are shown by broken lines.
- the shot region SR 1 which is the shot region following the shot region SR 2 immediately after scanning and exposure is completed and to which the first projection image of the mask pattern has already been transferred, passes directly under the second imaging optical system G 2 without undergoing scanning and exposure.
- the shot region SR 2 during scanning and exposure and the shot region SR 2 after scanning and exposure in the second straight path SCb are shown by dashed dotted lines, and the shot region SR 1 that is to pass directly under the second imaging optical system G 2 without undergoing scanning and exposure and the shot region SR 1 that has passed directly under the second imaging optical system G 2 without undergoing scanning and exposure are shown by solid lines.
- the shutter immediately after the mask M is retracted from the optical path, and the first imaging region ER 1 is formed at the start position on the ⁇ X direction side of the shot region SR 1 that is to be next scanned and exposed, and the second imaging region ER 2 is formed at the start position on the +X direction side of the shot region SR 2 that is to be next scanned and exposed.
- the imaging regions ER 1 and ER 2 are formed at the start position of the shot region SR 1 and SR 2 to be next scanned and exposed.
- the scanning and exposure to the shot region SR 1 that passes directly under the first imaging optical system G 1 , and the scanning and exposure to the shot region SR 2 that passes directly under the second imaging optical system G 2 are performed simultaneously. Then, by repeating several times the reciprocal movement of the mask M along the Y direction (scan movement and backward movement), the shot region SR 1 and the shot region SR 2 , on which the pattern of the mask M is transferred, are formed one after the other on the sheet SH that moves continuously along a predetermined path.
- the shot region SR 1 in which the first projection image of the mask pattern is formed via the first imaging optical system G 1 , and the shot region SR 2 in which the second projection image of the mask pattern is formed via the second imaging optical system G 2 are mutually adjoined along the lengthwise direction of the belt-shaped sheet SH.
- the turn-back distance along the conveyance path from the center of the first imaging region ER 1 to the center of the second imaging region ER 2 is an odd-number multiple of the sum (Sx+Gx) of the X-direction dimension Sx and the interval Gx of each shot region.
- the sum (Sx+Gx) of the X-direction dimension Sx and the interval Gx corresponds to the period of scan movement of the mask M and corresponds to the period of the backward movement of the mask M.
- the intermediate imaging optical system GM, the group of deflecting members M 1 to M 3 , and the first imaging optical system G 1 constitute a first imaging system that forms the first projection image of the pattern of the mask M on the first imaging region ER 1 on the sheet SH.
- the first imaging system (GM, M 1 to M 3 , G 1 ) forms the first imaging region ER 1 that is optically conjugate with the illumination region IR that is formed in the pattern region of the mask M by the illumination optical system IL on the sheet SH that moves in the ⁇ X direction along the first straight path SCa.
- the intermediate imaging optical system GM, the group of deflecting members M 4 to M 6 , and the second imaging optical system G 2 constitute a second imaging system that forms the second projection image of the pattern of the mask M on the second imaging region ER 2 at an interval in the Y direction from the first imaging region ER 1 .
- the second imaging system (GM, M 4 to M 6 , G 2 ) forms the second imaging region ER 2 that is optically conjugate with the illumination region IR on the sheet SH that moves in the +X direction along the second straight path SCb at an interval in the Y direction from the first straight path SCa.
- the portion on the first straight path SCa of the belt-shaped sheet SH moves in the ⁇ X direction
- the portion on the second straight path SCb of the sheet SH moves in the +X direction
- the mask M moves in the +Y direction in synchronization with the movement of the sheet SH in the X direction.
- the pair of imaging regions ER 1 and ER 2 are respectively formed in a row separated by an interval in the Y direction, which is perpendicular to the X direction that is the scanning direction of the sheet SH, in the first portion on the first straight path SCa of the sheet SH and the second portion on the second straight path SCb of the sheet SH.
- the first projection image of the pattern of the mask M is formed in the first imaging region ER 1 on the sheet SH that moves along the first straight path SCa so as to optically correspond with the +Y direction that is the scanning direction of the mask M and the ⁇ X direction that is the moving direction (scanning direction) of the sheet SH in the first straight path SCa.
- the second projection image of the pattern of the mask M is formed in the second imaging region ER 2 on the sheet SH that moves along the second straight path SCb so as to optically correspond with the +Y direction that is the scanning direction of the mask M and the +X direction that is the moving direction of the sheet SH in the second straight path SCb.
- the exposure apparatus of the present embodiment by performing a scan movement of the mask M once in the +Y direction, the scanning and exposure of the first projection image to the shot region SR 1 on the sheet SH that moves in the ⁇ X direction along the first straight path SCa and the scanning and exposure of the second projection image to the shot region SR 2 on the sheet SH that moves in the +X direction along the second straight path SCb can be performed simultaneously. Also, by repeating several times the reciprocal movement of the mask M along the Y direction, it is possible to continuously form in an alternating manner the shot region SR 1 in which the first projection image of the pattern of the mask M is transferred and the shot region SR 2 in which the second projection image is transferred on the sheet SH that continuously moves along a predetermined path. That is, in the exposure apparatus of the present embodiment, it is possible to improve the throughput of scanning and exposure to the belt-shaped sheet SH that is conveyed by roll to roll.
- the present invention was described based on the projection optical system PL that has the specific constitution shown in FIG. 2 to FIG. 7 .
- the splitting and reflecting portion 10 is used that has the plurality of first reflecting portions 10 a and the plurality of second reflection parts 10 b that are arranged in a fixed manner at the rear focal position of the positive lens group Lp or in the vicinity thereof.
- the splitting and reflecting portion 10 it is not limited thereto, and instead of the splitting and reflecting portion 10 , as shown in FIG. 9 , it is possible to use a spatial optical modulator 11 that has a plurality of mirror elements 11 a that are two-dimensionally arranged and whose attitude can be individually changed.
- the spatial optical modulator 11 is provided with a plurality of mirror elements 11 a that are two-dimensionally disposed at the rear focal position of the positive lens group Lp or the vicinity thereof, a base 11 b that holds the plurality of mirror elements 11 a , and a drive portion 11 c that individually drives the attitude of the plurality of mirror elements 11 a via a cable (not illustrated) that is connected to base 11 b .
- the drive portion 11 c individually controls the attitude of the plurality of mirror elements 11 a in accordance with a command from a main control system CR.
- the plurality of mirror elements 11 a have for example a plane-shaped reflecting surface, and are arranged along a plane parallel to the XY plane. Alternatively, the plurality of mirror elements 11 a are arranged along a concave curved surface (for example, a spherical surface) toward the positive lens group Lp.
- the attitudes of the plurality of mirror elements 11 a are set to the state shown in the partial detailed drawing A of FIG. 9 .
- the mirror elements 11 ab that are attitude controlled so that the normal that extends from the reflecting surface to the outside faces diagonally upward to the left in FIG. 9 are set so as to be alternately arranged in the Y direction. Accordingly, the light parallel to the optical axis AXp of the positive lens group Lp that is incident on the mirror elements 11 as serving as a first reflecting portion is reflected diagonally upward to the right in FIG. 9 by the reflecting surfaces thereof.
- the light that is incident on the mirror elements 11 ab serving as a second reflecting portion parallel to the optical axis AXp is reflected diagonally upward to the left in FIG. 9 by the reflecting surfaces thereof.
- the light that is reflected by the plurality of mirror elements 11 ab becomes a second light, and passes through the positive lens group Lp and the fourth deflecting member M 4 to form the second intermediate image I 2 .
- the attitudes of all of the mirror elements 11 a are set to the state shown in the partial detailed drawing B of FIG. 9 .
- the attitudes of all of the mirror elements 11 a are uniformly set so that the normal that extends from the reflecting surface to the outside faces diagonally upward to the right in FIG. 9 .
- all of the mirror elements 11 a function as the first reflecting portion that reflects light that has entered parallel to the optical axis AXp of the positive lens group Lp diagonally upward to the right in FIG. 9 . Accordingly, all the light that is reflected by the spatial optical modulator 11 becomes the first light and passes through the positive lens group Lp and the first deflecting member M 1 to form the first intermediate image I 1 .
- the attitudes of all of the mirror elements 11 a are uniformly controlled so that the normal that extends from the reflecting surface to the outside faces diagonally upward to the left.
- all of the mirror elements 11 a function as the second reflecting portion that reflects light that has entered parallel to the optical axis AXp of the positive lens group Lp diagonally upward to the left in FIG. 9 . Accordingly, all the light that is reflected by the spatial optical modulator 11 becomes the second light and passes through the positive lens group Lp and the fourth deflecting member M 4 to form the second intermediate image I 2 .
- each mirror element 11 a in response to the shape of the optical intensity distribution (pupil intensity distribution) that is for example formed in the illumination pupil at the rear focal plane of the fly-eye lens 21 or the vicinity thereof, and by extension it is possible to suitably change the selection of mirror elements 11 a that are used, the selection of the orientation of reflected light from the mirror elements 11 a , and the distribution of the quantity of reflected light from the mirror elements 11 a .
- the optical intensity distribution projection intensity distribution
- the spatial optical modulator 11 it is possible to use the spatial optical modulator disclosed in Japanese Patent Application Publication No. H10-503300A and the corresponding European Patent Application Publication No. 779530, Japanese Patent Application Publication No. 2004-78136A and the corresponding U.S. Pat. No. 6,900,915, Japanese Patent Application Publication No. 2006-524349A and corresponding U.S. Pat. No. 7,095,546, and Japanese Patent Application Publication No. 2006-113437.
- the intermediate imaging optical system GM is provided with the positive lens group Lp as a lens group which light from the pattern region of the mask M enters
- this lens group is not limited to a positive lens group (a lens group having overall positive refractive power), and it is possible to make it a negative lens group (a lens group having overall negative refractive power).
- this lens group is preferably a positive lens group in the case of the plurality of first reflecting portions 10 a and the plurality of second reflecting portions 10 b of the splitting and reflecting portion 10 being arranged along a planar surface, and in the case of the plurality of mirror elements 11 a of the spatial optical modulator 11 being arranged along a planar surface.
- this lens group is preferably a negative lens group in the case of the plurality of first reflecting portions 10 a and the second reflecting portions 10 b , or the plurality of mirror elements 11 a being arranged along a concave surface facing the intermediate imaging optical system GM, and the lens Lp 2 that is most on the rear focal position side of the intermediate imaging optical system GM (refer to FIG. 9 ) being a concave lens.
- splitting and reflecting portion 12 that consists of a polarization beam splitter 12 a and a pair of concave reflecting mirrors 12 b and 12 c .
- the polarization beam splitter 12 a that serves as the splitting portion splits the light L 1 from the positive lens group Lp into P polarization transmitted light (first light) L 11 and S polarization reflected light (second light) L 12 .
- the P polarization light L 11 that is transmitted through the polarization beam splitter 12 a is reflected by the first concave reflecting mirror 12 b that is positioned at the focal position of the positive lens group Lp or in the vicinity thereof, and enters the polarization beam splitter 12 a.
- the P polarization light L 11 that has entered the polarization beam splitter 12 a after being transmitted through the polarization beam splitter 12 a , it passes through the positive lens group Lp and the first deflecting member M 1 to form the first intermediate image I 1 .
- the S polarization light L 12 that is reflected by the polarization beam splitter 12 a it is reflected by the second concave reflecting mirror 12 c that is disposed at the focal position of the positive lens group Lp or the vicinity thereof and enters the polarization beam splitter 12 a .
- the P-polarization light that is transmitted through the polarization beam splitter becomes the second light that forms the second intermediate image I 2
- the S-polarization light that is reflected by the polarization beam splitter becomes the first light that forms the first intermediate image I 1 .
- the P-polarization light that is transmitted through the polarization beam splitter after being reflected by the one concave reflecting mirror, passes through the polarization beam splitter, the positive lens group Lp and the fourth deflecting member M 4 to form the second intermediate image I 2 .
- splitting and reflecting portion 13 that has a reflection-type diffraction grating.
- the splitting and reflecting portion 13 has a diffraction optical surface 13 a that is formed along a plane that is for example parallel to the XY plane (or along a concave curved surface (for example, along a spherical surface) facing the positive lens group Lp).
- the diffraction optical surface 13 a is designed to reflect light Li that is incident along the optical axis AXp of the positive lens group Lp so as to generate +1st order diffracted light L(+1) diagonally upward to the left in FIG.
- the diffraction optical surface 13 a be a phase grating that distributes and diffracts most of the incident light to +1st order diffracted light and ⁇ 1st order diffracted light.
- the duty ratio of the concave portions and the convex portions of the diffraction optical surface 13 a is preferably approximately 50%. By having the duty ratio be approximately 50%, it is possible to efficiently diffract the +1st order diffracted light L(+1) and the ⁇ 1st order diffracted light L( ⁇ 1).
- the arrangement pitch P may be set so that the formed angle ⁇ is equivalent with the angle formed by the optical axis AXp and the first light L 11 (or the second light L 12 ) (refer to FIG. 3 ).
- the first deflecting member M 1 is disposed in the optical path between the intermediate imaging optical system GM and the formation position of the first intermediate image I 1
- the second deflecting member M 2 is disposed in the optical path between the formation position of the first intermediate image I 1 and the first imaging optical system G 1
- the third deflecting member M 3 is disposed in the optical path between the second deflecting member M 2 and the first imaging optical system G 1 .
- the fourth deflecting member M 4 is disposed in the optical path between the intermediate imaging optical system GM and the formation position of the second intermediate image I 2
- the fifth deflecting member M 5 is disposed in the optical path between the formation position of the second intermediate image I 2 and the second imaging optical system G 2
- the sixth deflecting member M 6 is disposed in the optical path between the fifth deflecting member M 5 and the second imaging optical system G 2 .
- the first deflecting member M 1 deflects the first light from the positive lens group Lp in the Y direction that is the scanning direction of the mask M
- the second deflecting member M 2 deflects the light from the first deflecting member M 1 in the X direction that is the scanning direction of the sheet SH
- the third deflecting member M 3 deflects the light from the second deflecting member M 2 in the Z direction that is parallel to the optical axis AXp of the intermediate imaging optical system GM.
- the fourth deflecting member M 4 deflects the second light from the positive lens group Lp in the Y direction
- the fifth deflecting member M 5 deflects the light from the fourth deflecting member M 4 in the X direction
- the sixth deflecting member M 6 deflects the light from the fifth deflecting member M 5 in the Z direction.
- the fourth deflecting member M 4 deflects light in the opposite direction ( ⁇ Y direction) to the deflection direction of light by the first deflecting member M 1 (+Y direction)
- the fifth deflecting member M 5 deflects light from the fourth deflecting member M 4 in the same direction (+X direction) as the deflection direction of light by the second deflecting member M 2 (+X direction)
- the sixth deflecting member M 6 deflects light from the fifth deflecting member M 5 in the same direction ( ⁇ Z direction) as the deflection direction of light by the third deflecting member M 3 ( ⁇ Z direction).
- the first group of deflecting members with the first deflecting member that deflects the first light from the positive lens group Lp in the X direction that is the scanning direction of the sheet SH, the second deflecting member that deflects the light from this first deflecting member in the Y direction which is the scanning direction of the mask M, and the third deflecting member that deflects the light from this second deflecting member in the Z direction that is parallel to the optical axis AXp of the intermediate imaging optical system GM.
- the second group of deflecting members with the fourth deflecting member that deflects the second light from the positive lens group Lp in the X direction, the fifth deflecting member that deflects the light from this fourth deflecting member in the Y direction, and the sixth deflecting member that deflects the light from this fifth deflecting member in the Z direction.
- the first group of deflecting members so as to deflect the first light from the positive lens group Lp in the Y direction, the X direction and the Z direction in turn, or in the X direction, the Y direction, and the Z direction in turn, it is possible to bring the direction on the first projection image that optically corresponds to the +Y direction on the pattern region of the mask M into agreement with the ⁇ X direction.
- the second group of deflecting members so as to deflect the second light from the positive lens group Lp in the Y direction, the X direction and the Z direction in turn, or in the X direction, the Y direction, and the Z direction in turn, it is possible to bring the direction on the second projection image that optically corresponds to the +Y direction on the pattern region of the mask M into agreement with the +X direction.
- the first group of deflecting members so as to deflect the first light from the positive lens group Lp in the X direction, the Y direction, and the Z direction in turn
- the second group of deflecting members so as to deflect the second light from the positive lens group Lp in the X direction, the Y direction, and the Z direction in turn.
- “deflect in turn” means to deflect in each direction one after the other and is not limited to the aforementioned order, and specifically means the order of deflecting in the X direction and deflecting in the Y direction may be replaced.
- a constitution is also possible that arranges the lenses constituting a portion of the intermediate imaging optical system GM in the optical path between the first deflecting member M 1 and the formation position of the first intermediate image I 1 , and arranges the lenses constituting a portion of the intermediate imaging optical system GM in the optical path between the fourth deflecting member M 4 and the formation position of a second intermediate image I 2 .
- a portion and not the entirety of the intermediate imaging optical system GM is in common with the first imaging system and the second imaging system.
- the foregoing embodiment specifies the shape of the illumination region IR that is formed on the mask M by the operation of the mask blind 23 in the illumination optical system IL, and by extension specifies the shape of the imaging regions ER 1 and ER 2 that are formed on the sheet SH.
- a constitution is also possible that for example arranges a first variable visual field aperture (not illustrated) at the formation position of the first intermediate image I 1 or the vicinity thereof, and a second variable visual field aperture (not illustrated) at the formation position of the second intermediate image I 2 or the vicinity thereof.
- the shape of the mask-side projection visual field of the projection optical system PL is specified by the first variable visual field aperture and the second variable visual field aperture, and this mask side projection visual field is not necessarily in agreement with the illumination region IR that is formed on the mask M.
- the illumination region IR is set to a shape that secures a necessary margin region to include the mask-side projection visual field.
- the first imaging region ER 1 that is the first projection visual field on the sheet side of the projection optical system PL is specified as a region that is optically conjugate with the mask-side projection visual field by the first variable visual field aperture.
- the second imaging region ER 2 that is the second projection visual field on the sheet side of the projection optical system PL is specified as a region that is optically conjugate with the mask-side projection visual field by the second variable visual field aperture.
- a constitution is also possible that for example disposes the first variable visual field aperture at the formation position of the first intermediate image I 1 or the vicinity thereof, and disposes the second variable visual field aperture at the formation position of the second intermediate image I 2 or the vicinity thereof.
- arrangement of the aforementioned shutter becomes unnecessary, and it is possible to fulfill the shutter function by the opening and closing operation of the opening portion of the first variable visual field aperture and the second variable visual field aperture.
- the scan direction of the mask M (Y direction) and the scan direction of the sheet SH (X direction) are perpendicular.
- the scan direction of the mask and the scan direction of the substrate it is not necessary for the scan direction of the mask and the scan direction of the substrate to be perpendicular, and various aspects are possible in accordance with the constitution of the projection optical system.
- the first straight path SCa and the second straight path SCb are provided in a mutually parallel manner, and so by extension the direction in which the belt-shaped sheet SH moves along the first straight path SCa ( ⁇ X direction) and the direction in which it moves along the second straight path SCb (+X direction) are opposed.
- the first straight path and the second straight path it is not necessary for the first straight path and the second straight path to be exactly parallel, and accordingly there is no need for the movement direction of the first portion and the movement direction of the second portion of the belt-shaped sensitive substrate to be exactly oppositely-oriented.
- the present invention is applied to an exposure apparatus that simultaneously performs scanning and exposure to a first portion and scanning and exposure to a second portion of a belt-shaped sensitive substrate that has flexibility.
- the invention similarly to an exposure apparatus that simultaneously performs scanning and exposure to a first substrate that moves in a first heading along a first direction, and scanning and exposure to a second substrate that moves in a second heading opposite to the first heading along the first direction.
- the moving mechanism moves the second substrate in the second heading at an interval from the first substrate in a direction that is perpendicular to the first direction.
- the first substrate and the second substrate may be a substrate of any shape that has flexibility, and may also be a substrate of any shape that does not have flexibility.
- the foregoing embodiment applies the present invention to an exposure apparatus in which is mounted a projection optical system PL that has a magnification power.
- a projection optical system PL that has a magnification power
- the exposure apparatus of the foregoing embodiment is manufactured by assembling various sub-systems including each constituent element that is recited in the claims of the present application so as to retain a predetermined mechanical accuracy, electrical accuracy and optical accuracy.
- adjustment for attaining the optical accuracy in various optical systems adjustment for attaining mechanical accuracy in various mechanical systems, and adjustment for attaining the electrical accuracy in various electrical systems is performed before and after this assembly.
- mechanical connections, wiring connections of electrical circuits, and piping connections of air-pressure circuits between various subsystems are included. Prior to the assembly step from each subsystem to the exposure apparatus, it goes without saying that there are assembly steps of each subsystem.
- the manufacture of the exposure apparatus is preferably performed in a clean room in which the temperature and the level of cleanness are controlled.
- FIG. 12 is a flowchart that shows the manufacturing steps of a semiconductor device.
- the manufacturing steps of the semiconductor device consist of vapor depositing a metallic film on a wafer that that serves as the substrate of the semiconductor device (Step 40 ) and applying a photoresist made of a photosensitive material on this vapor-deposited metal film (Step S 42 ).
- Step S 44 exposure step
- Step S 46 developing step
- Step S 48 processing step.
- the resist pattern indicates a photoresist layer (transfer pattern layer) in which unevenness is generated of a shape corresponding to the pattern that is transferred by the exposure apparatus of the foregoing embodiment, with the concavities thereof passing through the photoresist layer.
- Step S 48 surface processing of the wafer is performed by this resist pattern.
- at least one of etching of the surface of the wafer or formation of a metal film is included. Note that in Step S 44 , the exposure apparatus of the foregoing embodiment performs transfer of the pattern with the wafer on which the photoresist is applied serving as a photosensitive substrate.
- FIG. 13 is a flowchart that shows the manufacturing steps of a liquid crystal device such as a liquid crystal display.
- a pattern formation step (Step S 50 ), a color filter formation step (Step S 52 ), a cell assembly step (Step S 54 ) and a module assembly step (Step S 56 ) are sequentially performed.
- a predetermined pattern such as a circuit pattern, an electrode pattern and the like is formed using the exposure apparatus of the foregoing embodiment on a glass substrate on which a photoresist is applied serving as a photosensitive substrate.
- the pattern forming step includes an exposure step of transferring a pattern onto the photoresist layer by using the exposure apparatus of the foregoing embodiment, a developing step of developing the photosensitive substrate onto which the pattern has been transferred, in other words, developing the photoresist layer on the glass substrate to shape the photoresist layer (transfer pattern layer) in accordance with the pattern, and a processing step of processing the surface of the glass substrate by means of the developed photoresist layer.
- Step S 52 a large number of sets of three dots corresponding to R (red), G (green) and B (blue) are arranged in a matrix, or a large number of sets of three stripe filters R, G and B are arranged so as to be adjacent to each other in the horizontal scan direction, in order to form a color filter.
- a liquid crystal panel (a liquid crystal cell) is assembled by using the glass substrate in which the predetermined pattern is formed in Step S 50 and the color filter formed in Step S 52 . Specifically speaking, liquid crystal is injected between the glass substrate and the color filter to form the liquid crystal panel, for example.
- the liquid crystal panel assembled in Step S 54 is provided with an electrical circuit designed to cause the liquid crystal panel to perform a display operation and a variety of components including a back light.
- the present invention is not limited to application to an exposure apparatus for the manufacturing process of semiconductor devices or liquid crystal devices.
- an exposure apparatus for the manufacture of display devices such as plasma displays
- an exposure apparatus for the manufacture of various devices such as imaging elements (such as CCDs), micro electro mechanical systems, thin-film magnetic heads, and DNA chips.
- the present invention can also be applied to an exposure step (exposure apparatus) when manufacturing masks (photomasks, reticles and the like) having mask patterns of a variety of devices formed therein by using the photolithography technique.
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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US12/692,443 US8264666B2 (en) | 2009-03-13 | 2010-01-22 | Exposure apparatus, exposure method, and method of manufacturing device |
JP2010026086A JP5534176B2 (ja) | 2009-03-13 | 2010-02-09 | 露光装置、露光方法、およびデバイス製造方法 |
KR1020117021229A KR20110137309A (ko) | 2009-03-13 | 2010-03-05 | 노광장치, 노광방법 및 디바이스 제조방법 |
PCT/JP2010/054163 WO2010104162A1 (en) | 2009-03-13 | 2010-03-05 | Exposure apparatus, exposure method, and method of manufacturing device |
CN201080011781.4A CN102362227B (zh) | 2009-03-13 | 2010-03-05 | 曝光设备、曝光方法和加工装置的方法 |
TW099107186A TWI453547B (zh) | 2009-03-13 | 2010-03-12 | An exposure apparatus, an exposure method, and an element manufacturing method |
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US12/692,443 US8264666B2 (en) | 2009-03-13 | 2010-01-22 | Exposure apparatus, exposure method, and method of manufacturing device |
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US (1) | US8264666B2 (enrdf_load_stackoverflow) |
JP (1) | JP5534176B2 (enrdf_load_stackoverflow) |
KR (1) | KR20110137309A (enrdf_load_stackoverflow) |
CN (1) | CN102362227B (enrdf_load_stackoverflow) |
TW (1) | TWI453547B (enrdf_load_stackoverflow) |
WO (1) | WO2010104162A1 (enrdf_load_stackoverflow) |
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US9348462B2 (en) * | 2012-06-13 | 2016-05-24 | Maxim Integrated Products, Inc. | Gesture detection and recognition based upon measurement and tracking of light intensity ratios within an array of photodetectors |
KR102096891B1 (ko) * | 2012-07-13 | 2020-04-03 | 가부시키가이샤 니콘 | 디바이스 제조 방법 |
JP6256338B2 (ja) | 2012-09-14 | 2018-01-10 | 株式会社ニコン | 基板処理装置及びデバイス製造方法 |
TWI596652B (zh) * | 2012-11-06 | 2017-08-21 | 尼康股份有限公司 | Polarizing beam splitter, substrate processing apparatus, component manufacturing system, and device manufacturing method |
WO2014199744A1 (ja) * | 2013-06-14 | 2014-12-18 | 株式会社ニコン | 基板処理装置、デバイス製造方法及び露光方法 |
CN105684126A (zh) * | 2013-10-22 | 2016-06-15 | 应用材料公司 | 具有主动对准的卷对卷无掩模光刻 |
CN106687867B (zh) * | 2014-09-04 | 2019-08-02 | 株式会社尼康 | 处理系统及元件制造方法 |
GB2530768B (en) * | 2014-10-01 | 2019-07-17 | Kratos Analytical Ltd | Method and apparatuses relating to cleaning an ion source |
TWI699624B (zh) * | 2015-02-27 | 2020-07-21 | 日商尼康股份有限公司 | 基板處理裝置及元件製造方法 |
JP6723831B2 (ja) * | 2016-06-01 | 2020-07-15 | 株式会社オーク製作所 | 露光装置 |
CN109031899A (zh) * | 2018-09-29 | 2018-12-18 | 苏州源卓光电科技有限公司 | 一种高分辨率高效率投影光刻成像系统及曝光方法 |
DE102022200539A1 (de) | 2022-01-18 | 2022-11-17 | Carl Zeiss Smt Gmbh | Optisches System für die Projektionslithographie |
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- 2010-03-05 KR KR1020117021229A patent/KR20110137309A/ko not_active Ceased
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Also Published As
Publication number | Publication date |
---|---|
KR20110137309A (ko) | 2011-12-22 |
CN102362227B (zh) | 2014-06-18 |
JP2010217877A (ja) | 2010-09-30 |
JP5534176B2 (ja) | 2014-06-25 |
WO2010104162A1 (en) | 2010-09-16 |
CN102362227A (zh) | 2012-02-22 |
TW201035698A (en) | 2010-10-01 |
TWI453547B (zh) | 2014-09-21 |
US20100265483A1 (en) | 2010-10-21 |
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