US8102489B2 - Liquid crystal display device having black matrix in region outside of pixel region and method for fabricating the same - Google Patents

Liquid crystal display device having black matrix in region outside of pixel region and method for fabricating the same Download PDF

Info

Publication number
US8102489B2
US8102489B2 US11/158,009 US15800905A US8102489B2 US 8102489 B2 US8102489 B2 US 8102489B2 US 15800905 A US15800905 A US 15800905A US 8102489 B2 US8102489 B2 US 8102489B2
Authority
US
United States
Prior art keywords
region
black matrix
substrate
pixel
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US11/158,009
Other languages
English (en)
Other versions
US20050285995A1 (en
Inventor
Dong-Guk Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Display Co Ltd filed Critical LG Display Co Ltd
Assigned to LG.PHILIPS LCD CO., LTD. reassignment LG.PHILIPS LCD CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, DONG-GUK
Publication of US20050285995A1 publication Critical patent/US20050285995A1/en
Assigned to LG DISPLAY CO., LTD. reassignment LG DISPLAY CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LG.PHILIPS LCD CO., LTD.
Priority to US13/342,596 priority Critical patent/US8284376B2/en
Application granted granted Critical
Publication of US8102489B2 publication Critical patent/US8102489B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to a liquid crystal display device, and more particularly, to a color filter on thin film transistor type liquid crystal display device having a black matrix in an outside region immediately adjacent to a pixel region.
  • a liquid crystal display (LCD) device is a display device for displaying an image using liquid crystal molecules having a refractive anisotropy and a dielectric anisotropy.
  • an LCD device includes an array substrate in which unit pixels are arranged in a matrix form, a color filter substrate facing the array substrate and displaying an image in color, and a liquid crystal layer between the array substrate and the color filter substrate.
  • a TN (twisted nematic) mode LCD device which provides vivid colors with high brightness is being widely used these days.
  • the TN mode LCD device includes an array substrate in which unit pixels are arranged in a matrix form, a color filter substrate having a color filter layer and facing the array substrate, and a liquid crystal layer formed such that liquid crystal molecules are twisted between the two substrates.
  • a thin film transistor (TFT) which is a switching device for a unit pixel, is formed at each pixel of the array substrate.
  • the array substrate is often referred to as a TFT array substrate.
  • the LCD device cannot generate light by itself, the LCD device includes a backlight assembly for supplying light from the outside.
  • a backlight assembly for supplying light from the outside.
  • light advances from under the TFT array substrate and passes through the liquid crystal layer and the upper color filter layer to display an image. Part of the light advancing from under the TFT array substrate is unnecessary, which should be blocked. Therefore, a black matrix is formed to block the unnecessary light.
  • the black matrix is formed of an opaque metal thin film or an organic film on a color filter layer.
  • the LCD device in which the black matrix is formed on the color filter substrate is disadvantageous in that it is difficult to precisely attach the array substrate and color filter substrate together. Therefore, a color filter on TFT (COT) type LCD device has been proposed.
  • a black matrix and a color filter layer are formed on an array substrate so that an LCD panel forming process concentrates on the array substrate, and the alignment between the array substrate and the color filter substrate during an attachment is easily facilitated.
  • FIG. 1 is a cross-sectional view illustrating a COT type LCD device in accordance with the related art.
  • a COT type LCD device includes a color filter layer 110 and a black matrix 111 on a lower substrate 101 .
  • the COT type LCD device also includes an upper substrate 150 facing the lower substrate 101 and a liquid crystal layer 140 between the lower and upper substrates 101 and 150 .
  • the lower substrate 101 includes gate lines (not shown) and data lines 108 intersecting each other and defining a plurality of unit pixels.
  • the lower substrate 101 includes a TFT at one side of every unit pixel, a color filter layer 110 at every unit pixel, and a black matrix 111 between the color filter layers 110 .
  • the plurality of TFTs are arranged in a matrix form on the lower substrate 101 , which is a transparent glass substrate.
  • the TFT includes a gate electrode 103 for receiving a scan signal, a gate insulation layer 102 formed on the gate electrode 103 , an active layer 104 , which is a semiconductor layer formed on the gate insulation layer 102 , and an ohmic contact layer 107 contacting the active layer 104 with source and drain electrodes 105 and 106 . Further, a passivation layer 109 for protecting and insulating the TFT from the outside is formed on the TFT.
  • the black matrix 111 is formed on the passivation layer 109 .
  • the black matrix 111 is arranged in a matrix form for blocking the unnecessary light leaked from and passing through a reverse tilt domain region around the gate line (not shown) and the data line 108 and the like.
  • the color filter 110 having one of red, green and blue sub-color filters is formed on the passivation layer 109 at each of the unit pixels.
  • a pixel electrode 112 also is formed on the passivation layer 109 .
  • a contact hole is formed in the color filter 110 and the passivation layer 109 for exposing the drain electrode 106 of the TFT, such that the pixel electrode 112 is connected to the drain electrode 106 through the contact hole.
  • the upper substrate 150 which is a glass substrate, includes a common electrode 151 and an alignment layer 152 .
  • the alignment layer 152 is formed on the common electrode 151 for aligning liquid crystal molecules of the liquid crystal layer 140 .
  • the lower substrate 101 generally is referred to as a TFT array substrate.
  • the TFT array substrate includes a pixel region where the pixel electrode 112 is formed, pad regions where a gate pad and a data pad for supplying a gate voltage and a data voltage are formed, a seal forming region where a sealant for attaching the upper substrate and the array substrate together is formed, and an outside region between the pixel region and the seal forming region.
  • FIG. 2 is a cross-sectional view illustrating edge portions of the COT type LCD device shown in FIG. 1 .
  • the array substrate includes a pixel region A, an outside region O adjacent to the pixel region A, a seal forming region P where a seal line 170 is formed, and a pad region Q in which various pads are formed.
  • a spacer 172 is formed between an array substrate 160 including a lower substrate 101 and an upper substrate 150 .
  • a gate pad electrode 176 is formed on the lower substrate 101 .
  • An electrostatic discharge (ESD) circuit 171 is formed between the pixel region A and the seal line 170 , namely, at the outside region O.
  • the ESD circuit 171 may be constructed by a combination of a plurality of TFTs, and one electrode thereof is connected to the pad region Q and its other electrode is connected to other lines of the pixel regions by Indium Tin Oxide (ITO). Therefore, when the external static electricity enters through the pad region Q, the ESD circuit 171 is operated to disperse the static electricity to the LCD panel and to block the static electricity from being applied to the pixel region A, thereby protecting the pixel.
  • ITO Indium Tin Oxide
  • an additional black matrix 173 of an opaque metal layer is formed on the upper substrate 150 corresponding to the outside region O.
  • a black matrix forming process is performed twice, one in an array substrate fabricating process and another in an upper substrate fabricating process, thereby reducing production efficiency and increasing fabrication costs.
  • the present invention is directed to a liquid crystal display device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide a liquid crystal display device having a black matrix in an outside region, thereby preventing light leakage occurring at the outside region.
  • the black matrix in the outside region is extended from a pixel region or is a black matrix in addition to a black matrix in the pixel region.
  • Another object of the present invention is to provide a method for fabricating a liquid crystal display device that omits forming a black matrix on an upper substrate.
  • Another object of the present invention is to provide a method for fabricating a liquid crystal display device having shortened fabricating process by forming a black matrix in an outside region when forming a black matrix in a pixel region on an array substrate.
  • a color filter on thin film transistor (COT) type liquid crystal display device includes a pixel region having a plurality of unit pixels defined by intersections of gate and data lines, the gate and data lines formed on a first substrate, a pad region receiving driving signals and applying the driving signals to the gate and data lines, a seal pattern between the pad region and the pixel region, an outside region having a first black matrix, the outside region being between the seal pattern and the pixel region and the first black matrix formed on the first substrate, and an electrostatic discharge circuit between the pad region and the pixel region, the electrostatic discharge circuit formed on the first substrate.
  • COT color filter on thin film transistor
  • a liquid crystal display device in another aspect, includes a first substrate including a thin film transistor, a passivation layer on the thin film transistor, a color filter layer on the passivation layer, a first black matrix on the passivation layer covering the thin film transistor, and an electrostatic discharge circuit, a second substrate facing the first substrate, a seal pattern attaching the first and second substrates to each other, the seal pattern covering the electrostatic discharge circuit, and a liquid crystal layer between the first and second substrates.
  • a method for manufacturing a color filter on thin film transistor (COT) type liquid crystal display device includes forming a thin film transistor in a pixel region on a first substrate, the thin film transistor including a gate electrode, an active layer and source and drain electrodes, forming a passivation layer above the thin film transistor, forming a black matrix extending to an outside portion of the pixel region on the passivation layer, forming a color filter layer at the pixel region, and forming a pixel electrode on the color filter layer.
  • COT color filter on thin film transistor
  • FIG. 1 is a cross-sectional view illustrating a COT type LCD device in accordance with the related art
  • FIG. 2 is a cross-sectional view illustrating edge portions of the COT type LCD device shown in FIG. 1 ;
  • FIG. 3 is a cross-sectional view illustrating a COT type LCD device in accordance with an embodiment of the present invention
  • FIG. 4 is a cross-sectional view illustrating a COT type LCD device in accordance with another embodiment of the present invention.
  • FIGS. 5A to 5G are cross-sectional views illustrating a method for fabricating a COT type LCD device in accordance with an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view illustrating a COT type LCD device in accordance with an embodiment of the present invention.
  • an LCD device includes an array substrate 500 including a color filter layer and an upper substrate 600 facing the array substrate 500 .
  • the array substrate 500 and the upper substrate 600 are attached together by a seal pattern 460 .
  • a plurality of gate lines (not shown) and a plurality of data lines (not shown) intersecting the gate lines are formed in a pixel region A on a lower substrate 401 of the array substrate 500 , thereby defining a plurality of unit pixels.
  • a thin film transistor which is a switching device, is formed at one side of each of the unit pixels on the array substrate 500 .
  • the TFT applying data voltage to the unit pixel is insulated from the outside by a passivation layer 409 .
  • a black matrix 410 for covering a reverse tilt domain region such as a gate line, a data line or the like is formed on the passivation layer 409 .
  • the black matrix 410 also covers a region where the TFT is formed.
  • the black matrix 410 is arranged in a matrix form in the pixel region A and covers the reverse tilt domain region.
  • a color filter layer 411 is formed at each of the unit pixels on the array substrate 500 .
  • the color filter layer 411 may include one of red, green and blue sub-color filter layers.
  • a pixel electrode 412 is formed on the color filter layer 411 at every unit pixel, and the pixel electrode 412 is connected to the drain electrode of the TFT.
  • the black matrix 410 is not only in the pixel region A but also extends to an outside region O that is immediately adjacent to the pixel region A. Because the black matrix 410 is formed extending to the outside region O, leakage of light through the outside region O is prevented.
  • the LCD device includes an ESD circuit 450 formed in a seal line forming region P
  • the ESD circuit 450 may include a plurality of thin film transistors, and one electrode of the ESD circuit 450 is connected to a gate pad or a data pad and the other electrode thereof is connected to a gate line and a data line of the array substrate 500 or to a common electrode of the upper substrate 600 .
  • the gate pad and the data pad may be in a pad region Q where a gate signal and a data signal are input from an external source (not shown).
  • the ESD circuit 450 discharges static electricity flowing from the outside and blocking static electricity from the pixel region A.
  • the ESD circuit 450 may be connected to the pad region Q and a plurality of lines within the pixel region A by a pixel electrode material, e.g., ITO. In particular, the connection is made through a plurality of contact holes (not shown) formed in the passivation layer 409 .
  • the black matrix 410 may include a thick organic layer, it becomes difficult to form the contact holes in the passivation layer 409 .
  • the black matrix 410 is relatively thick, fine etching thereon is difficult and accordingly, the contact hole which exposes the ESD circuit 450 may not be formed.
  • the ESD circuit 450 is formed under the seal pattern 460 because the seal pattern 460 may be formed after the ITO line connects the ESD circuit 450 with the various lines of the pixel region A and of the upper substrate 600 , the seal pattern 460 may be formed on the ESD circuit 450 .
  • the ESD circuit 450 which is not covered with the black matrix 410 may be formed while the black matrix 410 is formed extending to the outside region O.
  • the upper substrate 600 includes a second substrate 480 .
  • the second substrate 480 may be formed of transparent glass.
  • a common electrode and an alignment layer are formed on the second substrate 480 facing the array substrate 500 .
  • the common electrode on the upper substrate 600 and the pixel electrode 412 on the array substrate 500 may generate an electric field to control liquid crystal molecules of a liquid crystal layer between the upper and array substrates 600 and 500 , thereby displaying images.
  • a plurality of spacers 483 are formed on the upper substrate 600 or the array substrate 500 .
  • a polarization plate 361 is formed at an outer surface of the upper substrate 600
  • another polarization plate 361 (not shown) is formed at an outer surface of the array substrate 500 .
  • An LCD panel formed by the upper substrate 600 and the array substrate 500 attached to each other is protected by module devices.
  • one of the module devices is a top case 370 that covers an edge of the LCD panel thereon.
  • the top case 370 protects the LCD panel from an external impact or the like, and also prevents light leakage which may occur at the outside region O of the array substrate 500 .
  • a location of the ESD circuit 450 may be adjusted by adjusting a location of the top case 370 .
  • FIG. 4 is a cross-sectional view illustrating a COT type LCD device in accordance with another embodiment of the present invention.
  • an array substrate 500 includes a pixel region A, a seal line forming region P in which the seal pattern 460 is formed, an outside region O formed between the seal line forming region P and the pixel region A, and a pad region Q to which a gate voltage or a data voltage is applied.
  • a TFT, a pixel electrode and a color filter layer are formed at every unit pixel within the pixel region A on a lower substrate 401 of the array substrate 500 .
  • An ESD circuit 450 is formed adjacent to the seal pattern 460 in the outside region O.
  • the outside region O excluding its portion where the ESD circuit is formed is covered with a black matrix 410 .
  • the ESD circuit 450 is formed inside of the seal pattern 460
  • the black matrix 410 is formed on the lower substrate 401 of the array substrate 500 .
  • a top case 370 encompassing an outer edge of an LCD panel extends to cover a portion of the outside region O where the ESD circuit 450 is formed.
  • the top case 370 may extend further as long as it does not contact a polarization plate 361 formed on a second substrate 480 of an upper substrate 600 facing the array substrate 500 .
  • the top case 370 may be directly above the ESD circuit 450 . Therefore, light leakage occurring at the outside region O is prevented by the top case 370 and the black matrix 410 .
  • a link portion reaching the pad region Q from the seal line forming region P may be formed.
  • the link portion may be connected to the pad region Q as an interval between gate lines or between data lines decreases. Therefore, it may be difficult to form the ESD circuit because of narrowness of the link portion.
  • the ESD circuit is formed in the outside region O not at the link portion, a sufficient space for the formation of the ESD circuit is secured.
  • the ESD circuit is not limited in being formed in the seal line forming region P or the outside region O. For example, if the ESD circuit is designed to have a fine line width by improving a design rule, it may be formed at the link portion.
  • FIGS. 5A to 5G are cross-sectional views illustrating a method for fabricating a COT type LCD device in accordance with an embodiment of the present invention.
  • a gate electrode 402 and a gate pad electrode 403 are formed on a lower substrate 401 .
  • the lower substrate 401 may be formed of glass.
  • the gate electrode 402 and the gate pad electrode 403 may be formed by depositing a metal thin film using a sputtering method and by patterning the metal thin film into a predetermined pattern using a photolithography process.
  • a gate insulation layer 404 is formed on the gate electrode 402 and the gate pad electrode 403 .
  • the gate insulation layer 404 may be an silicon oxide film formed using a plasma enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma enhanced chemical vapor deposition
  • an active layer 405 and an ohmic-contact layer 406 are formed above the gate electrode 402 .
  • the active layer 405 may be formed by depositing a semiconductor layer using a PECVD method and by patterning the semiconductor layer using a dry etching process.
  • source and drain electrodes 407 and 408 are formed on the active layer 405 and the ohmic-contact layer 406 .
  • the source and drain electrodes 407 and 408 may be formed by depositing a metal thin film layer using a sputtering method and by patterning the metal thin film layer using a photolithography process.
  • a data line may be formed at a pixel region when forming the source and drain electrodes 407 and 408 .
  • a passivation layer 409 is formed on the source and drain electrodes 407 and 408 .
  • the passivation layer 409 may be an insulation layer.
  • an ESD circuit may be formed outside the pixel region.
  • the ESD circuit may also be protected by the passivation layer 409 .
  • a black matrix 410 is formed on the passivation layer 409 .
  • the black matrix 410 is formed at the pixel region A and may include an organic film.
  • the black matrix 410 is formed as a lattice shape, and covers the gate line and the data line (not shown), to thereby cover portions adjacent to the gate line and the data line which are reverse tilt domain regions.
  • the black matrix 410 extends to cover the outside region O.
  • a color filter layer 411 is formed at every unit pixel.
  • the color filter layer 411 may include one of red, green and blue sub-color filter layers, and may be formed using a photomask process and a pigment dispersing method.
  • the color filter layer 411 is not formed at a predetermined region corresponding to the TFT.
  • a contact hole that exposes the drain electrode 408 of the TFT is formed at every pixel.
  • the contact hole is formed at a region where the color filter layer 411 is not formed so as to be easily formed only by removing a portion of the passivation layer 409 .
  • another contact hole exposing one electrode of the ESD circuit and another contact hole for exposing the gate pad electrode 403 may be simultaneously formed when the contact hole exposing the drain electrode 408 is formed.
  • a pixel electrode 412 connected to the drain electrode 408 through the contact hole is formed at every unit pixel.
  • the pixel electrode 412 may be formed by depositing an ITO layer using a sputtering method and by patterning the ITO layer using a photolithography process.
  • a pad of the pad region Q and an ESG circuit connection line 450 for connecting the ESD circuit with lines of the pixel region A may be simultaneously formed.
  • a seal pattern 460 is formed in the seal forming region P.
  • the seal pattern 460 may be formed on an upper substrate 480 (shown in FIG. 5G ).
  • an alignment film may be formed where the pixel electrode 412 is formed, and the alignment film may include polyimide.
  • the upper substrate 480 is attached to the lower substrate 401 by the sealant pattern 460 .
  • the upper substrate 480 facing the TFT array substrate is formed through a separate process.
  • a common electrode 481 is formed on the upper substrate 480 , and an alignment film 482 is formed thereon.
  • a black matrix for preventing light leakage occurring at the outside region is not formed on the upper substrate 480 .
  • an alignment process of the upper substrate and the array substrate may be employed.
  • a liquid crystal material is filled in a cell gap between the lower and upper substrates 401 and 480 to form an LCD panel. Then, the LCD panel may be cut into a plurality of unit LCD panels.
  • the method for fabricating a COT type LCD device in accordance with an embodiment of the present invention includes forming a black matrix on an array substrate and extending the black matrix in an outside region immediately adjacent to the pixel region.
  • the black matrix also prevents light leakage occurring at the outside region.
  • the black matrix is simultaneously formed in both the pixel region and the outside region, thereby simplifying fabrication process and improving production efficiency. Hence, the process for forming a black matrix on the upper substrate is omitted.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
US11/158,009 2004-06-29 2005-06-22 Liquid crystal display device having black matrix in region outside of pixel region and method for fabricating the same Active 2026-10-05 US8102489B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/342,596 US8284376B2 (en) 2004-06-29 2012-01-03 Method for manufacturing color filter on thin film transistor (COT) type liquid crystal display device having black matrix in region outside of pixel region

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR49779/2004 2004-06-29
KR10-2004-0049779 2004-06-29
KR1020040049779A KR100945354B1 (ko) 2004-06-29 2004-06-29 화소영역외곽부에 블랙매트릭스가 형성된 ｃｏｔ구조액정표시장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/342,596 Division US8284376B2 (en) 2004-06-29 2012-01-03 Method for manufacturing color filter on thin film transistor (COT) type liquid crystal display device having black matrix in region outside of pixel region

Publications (2)

Publication Number Publication Date
US20050285995A1 US20050285995A1 (en) 2005-12-29
US8102489B2 true US8102489B2 (en) 2012-01-24

Family

ID=35505270

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/158,009 Active 2026-10-05 US8102489B2 (en) 2004-06-29 2005-06-22 Liquid crystal display device having black matrix in region outside of pixel region and method for fabricating the same
US13/342,596 Expired - Lifetime US8284376B2 (en) 2004-06-29 2012-01-03 Method for manufacturing color filter on thin film transistor (COT) type liquid crystal display device having black matrix in region outside of pixel region

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/342,596 Expired - Lifetime US8284376B2 (en) 2004-06-29 2012-01-03 Method for manufacturing color filter on thin film transistor (COT) type liquid crystal display device having black matrix in region outside of pixel region

Country Status (4)

Country Link
US (2) US8102489B2 (ja)
JP (2) JP4477552B2 (ja)
KR (1) KR100945354B1 (ja)
CN (1) CN100381894C (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140146094A1 (en) * 2012-11-28 2014-05-29 Japan Display Inc. Display device and electronic apparatus
US20140209932A1 (en) * 2013-01-30 2014-07-31 Au Optronics Corp. Pixel unit and pixel array
US8982309B2 (en) 2012-11-13 2015-03-17 Samsung Display Co., Ltd. Liquid crystal display device
US20160163769A1 (en) * 2014-12-05 2016-06-09 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
US9755009B2 (en) 2015-04-07 2017-09-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
US11910646B2 (en) 2020-04-29 2024-02-20 Samsung Display Co., Ltd. Display apparatus having discharge element

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100945354B1 (ko) * 2004-06-29 2010-03-08 엘지디스플레이 주식회사 화소영역외곽부에 블랙매트릭스가 형성된 ｃｏｔ구조액정표시장치
TWI261920B (en) * 2005-07-07 2006-09-11 Au Optronics Corp Active device matrix substrate
KR101300819B1 (ko) * 2006-12-05 2013-08-26 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101430526B1 (ko) * 2006-12-28 2014-08-19 삼성디스플레이 주식회사 표시 기판 및 이를 갖는 표시 장치
KR101386576B1 (ko) * 2008-06-25 2014-04-18 엘지디스플레이 주식회사 액정표시패널
JP5195260B2 (ja) * 2008-10-14 2013-05-08 セイコーエプソン株式会社 電子機器
KR101607636B1 (ko) 2009-11-23 2016-04-12 삼성디스플레이 주식회사 액정 표시 장치
KR101662135B1 (ko) * 2010-01-15 2016-10-05 삼성디스플레이 주식회사 전기영동 표시패널, 이의 제조 방법 및 이를 포함하는 전기영동 표시장치
KR101620526B1 (ko) 2010-01-22 2016-05-13 삼성디스플레이 주식회사 액정 표시 장치의 제조 방법과 이에 의한 액정 표시 장치
WO2012001766A1 (ja) * 2010-06-29 2012-01-05 日本たばこ産業株式会社 シガレット検査装置
CN102722056A (zh) * 2011-03-29 2012-10-10 京东方科技集团股份有限公司 彩色滤光阵列基板及其制造方法和液晶显示面板
JP6028332B2 (ja) 2012-01-12 2016-11-16 セイコーエプソン株式会社 液晶装置、及び電子機器
KR101982095B1 (ko) * 2012-10-17 2019-05-24 엘지디스플레이 주식회사 씰 패턴을 구비한 액정표시장치
KR102029437B1 (ko) * 2012-12-17 2019-10-07 엘지디스플레이 주식회사 터치센서 일체형 표시장치
KR102040084B1 (ko) 2013-03-25 2019-11-05 삼성디스플레이 주식회사 표시 장치
KR102106006B1 (ko) * 2013-08-14 2020-05-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102089326B1 (ko) * 2013-10-01 2020-03-17 엘지디스플레이 주식회사 표시장치
KR102124405B1 (ko) * 2013-11-11 2020-06-19 삼성디스플레이 주식회사 액정 표시 장치
KR102127240B1 (ko) * 2013-12-13 2020-06-26 엘지디스플레이 주식회사 표시장치 및 그 신호라인, 그 제조방법
CN104950541B (zh) * 2015-07-20 2018-05-01 深圳市华星光电技术有限公司 Boa型液晶显示面板及其制作方法
KR102630945B1 (ko) * 2015-11-20 2024-01-30 주식회사 동진쎄미켐 감광성 수지 조성물
CN105445998A (zh) * 2015-12-31 2016-03-30 武汉华星光电技术有限公司 Ltps显示面板及其制备工艺
CN106200160A (zh) * 2016-07-08 2016-12-07 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
KR102554095B1 (ko) 2016-09-30 2023-07-10 엘지디스플레이 주식회사 인셀 터치형 액정표시장치 및 그 제조방법
CN106353944A (zh) * 2016-11-04 2017-01-25 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置
KR20240127796A (ko) * 2023-02-16 2024-08-23 삼성전자주식회사 디스플레이 장치

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844645A (en) * 1996-06-20 1998-12-01 Nec Corporation Color liquid-crystal display device
US5907379A (en) * 1996-10-21 1999-05-25 Samsung Electronics Co., Ltd. In-plane switching liquid crystal display having high aperture ratio
US5949502A (en) * 1995-08-07 1999-09-07 Hitachi, Ltd. Liquid crystal device having resistor elements
US6064451A (en) * 1996-08-23 2000-05-16 Lg Electronics Inc Liquid crystal display device having transparent conductive layer
US6339457B1 (en) * 1998-02-25 2002-01-15 Lg.Philips Lcd Co., Ltd. Case for Liquid crystal display
US20020060768A1 (en) * 2000-11-22 2002-05-23 Lg.Philips Lcd Co., Ltd. Liquid crystal display panel
US6445432B2 (en) * 2000-01-21 2002-09-03 Nec Corporation Color liquid crystal display panel
US20020140883A1 (en) * 2001-03-29 2002-10-03 Nec Corporation CF on TFT liquid crystal display having reduced dot defects
US20030090608A1 (en) * 2001-11-15 2003-05-15 Lg. Philips Lcd Co., Ltd. Liquid crystal display device having an improved aperture ratio and method for fabricating the same
US6587160B2 (en) * 1997-10-14 2003-07-01 Samsung Electronics Co., Ltd. Liquid crystal displays
US20030123017A1 (en) * 2001-12-29 2003-07-03 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method of fabricating the same
US20040109108A1 (en) * 2002-12-05 2004-06-10 Yu-Chi Lee Liquid crystal display with ink jet color filters and manufacture method thereof
CN1507009A (zh) 2002-12-09 2004-06-23 Lg.������Lcd���޹�˾ 具有薄膜晶体管上滤色器结构的阵列基板及其制造方法
US20040218108A1 (en) * 2003-01-08 2004-11-04 Ko Young Yik Liquid crystal display panel
US20040227873A1 (en) * 2003-05-16 2004-11-18 Huo-Long Peng Color liquid crystal display device
US7333167B2 (en) * 2001-08-29 2008-02-19 Seiko Epson Corporation Electrooptical device and electronic equipment having resin film in light emitting region and sealing region

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05241139A (ja) * 1992-02-27 1993-09-21 Canon Inc 液晶表示装置
JPH07311378A (ja) * 1994-05-18 1995-11-28 Toppan Printing Co Ltd 液晶表示装置
JP3663741B2 (ja) * 1996-05-22 2005-06-22 セイコーエプソン株式会社 アクティブマトリックス型液晶表示装置及びその製造方法
JP3343645B2 (ja) * 1997-03-25 2002-11-11 シャープ株式会社 液晶表示装置及びその製造方法
DE10124986B4 (de) * 2000-05-25 2005-03-10 Lg Philips Lcd Co Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren dafür
JP2002026333A (ja) * 2000-07-11 2002-01-25 Nec Corp アクティブマトリクス基板の製造方法
JP3808356B2 (ja) * 2001-12-04 2006-08-09 株式会社日立製作所 液晶表示装置
KR20040009858A (ko) * 2002-07-26 2004-01-31 비오이 하이디스 테크놀로지 주식회사 액정표시장치
KR100945354B1 (ko) * 2004-06-29 2010-03-08 엘지디스플레이 주식회사 화소영역외곽부에 블랙매트릭스가 형성된 ｃｏｔ구조액정표시장치

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949502A (en) * 1995-08-07 1999-09-07 Hitachi, Ltd. Liquid crystal device having resistor elements
US5844645A (en) * 1996-06-20 1998-12-01 Nec Corporation Color liquid-crystal display device
US6064451A (en) * 1996-08-23 2000-05-16 Lg Electronics Inc Liquid crystal display device having transparent conductive layer
US5907379A (en) * 1996-10-21 1999-05-25 Samsung Electronics Co., Ltd. In-plane switching liquid crystal display having high aperture ratio
US6587160B2 (en) * 1997-10-14 2003-07-01 Samsung Electronics Co., Ltd. Liquid crystal displays
US6339457B1 (en) * 1998-02-25 2002-01-15 Lg.Philips Lcd Co., Ltd. Case for Liquid crystal display
US6445432B2 (en) * 2000-01-21 2002-09-03 Nec Corporation Color liquid crystal display panel
US20020060768A1 (en) * 2000-11-22 2002-05-23 Lg.Philips Lcd Co., Ltd. Liquid crystal display panel
US20020140883A1 (en) * 2001-03-29 2002-10-03 Nec Corporation CF on TFT liquid crystal display having reduced dot defects
US7333167B2 (en) * 2001-08-29 2008-02-19 Seiko Epson Corporation Electrooptical device and electronic equipment having resin film in light emitting region and sealing region
US20030090608A1 (en) * 2001-11-15 2003-05-15 Lg. Philips Lcd Co., Ltd. Liquid crystal display device having an improved aperture ratio and method for fabricating the same
US20030123017A1 (en) * 2001-12-29 2003-07-03 Lg.Philips Lcd Co., Ltd. Liquid crystal display device and method of fabricating the same
US20040109108A1 (en) * 2002-12-05 2004-06-10 Yu-Chi Lee Liquid crystal display with ink jet color filters and manufacture method thereof
CN1507009A (zh) 2002-12-09 2004-06-23 Lg.������Lcd���޹�˾ 具有薄膜晶体管上滤色器结构的阵列基板及其制造方法
US7180559B2 (en) 2002-12-09 2007-02-20 Lg.Philips Co., Ltd. Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same
US20040218108A1 (en) * 2003-01-08 2004-11-04 Ko Young Yik Liquid crystal display panel
US20040227873A1 (en) * 2003-05-16 2004-11-18 Huo-Long Peng Color liquid crystal display device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8982309B2 (en) 2012-11-13 2015-03-17 Samsung Display Co., Ltd. Liquid crystal display device
US20140146094A1 (en) * 2012-11-28 2014-05-29 Japan Display Inc. Display device and electronic apparatus
US9093043B2 (en) * 2012-11-28 2015-07-28 Japan Display Inc. Display device and electronic apparatus
US20140209932A1 (en) * 2013-01-30 2014-07-31 Au Optronics Corp. Pixel unit and pixel array
US8916879B2 (en) * 2013-01-30 2014-12-23 Au Optronics Corp. Pixel unit and pixel array
US20160163769A1 (en) * 2014-12-05 2016-06-09 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
US10211264B2 (en) * 2014-12-05 2019-02-19 Lg Display Co., Ltd. Organic light emitting display device having a color filter on thin film transistor structure and method of manufacturing the same
US9755009B2 (en) 2015-04-07 2017-09-05 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
US11910646B2 (en) 2020-04-29 2024-02-20 Samsung Display Co., Ltd. Display apparatus having discharge element

Also Published As

Publication number Publication date
US20120105394A1 (en) 2012-05-03
CN100381894C (zh) 2008-04-16
JP4643738B2 (ja) 2011-03-02
JP4477552B2 (ja) 2010-06-09
JP2010055100A (ja) 2010-03-11
KR100945354B1 (ko) 2010-03-08
US20050285995A1 (en) 2005-12-29
CN1716015A (zh) 2006-01-04
US8284376B2 (en) 2012-10-09
KR20060000808A (ko) 2006-01-06
JP2006018275A (ja) 2006-01-19

Similar Documents

Publication Publication Date Title
US8284376B2 (en) Method for manufacturing color filter on thin film transistor (COT) type liquid crystal display device having black matrix in region outside of pixel region
US7528917B2 (en) Liquid crystal display device having structure of color filter on TFT and using in plane switching mode
US7576824B2 (en) Liquid crystal display device and method for fabricating the same
KR101611923B1 (ko) 액정 표시 장치 및 이의 제조 방법
US6839116B2 (en) In-plane switching mode liquid crystal display device and fabrication method thereof
KR101427708B1 (ko) 액정 표시 패널
US6970223B2 (en) In-plane switching mode LCD device and method for fabricating the same
US20040075801A1 (en) Liquid crystal display device having black seal pattern and external resin pattern, and method of fabricating the same
KR101980773B1 (ko) 컬러필터를 가지는 박막트랜지스터 기판 및 그 제조 방법
EP3040767B1 (en) Liquid crystal display device and method of manufacturing the same
US7321406B2 (en) Liquid crystal display device and method of fabricating the same
KR100562451B1 (ko) 액정표시장치
JP2006201312A (ja) 液晶表示パネル及び液晶表示装置
US7336333B2 (en) In-plane switching mode liquid crystal display device and fabrication method thereof
US7876387B2 (en) Lateral electric field type liquid crystal display device
KR101172048B1 (ko) 액정 표시패널 및 그 제조방법
KR101423909B1 (ko) 표시 기판 및 이를 구비하는 액정 표시 장치
KR101590381B1 (ko) 액정표시장치 및 그 제조방법
KR101222537B1 (ko) 액정표시패널 및 그 제조방법
KR20080048725A (ko) 횡전계형 액정표시장치
US20120236225A1 (en) Display device substrate, manufacturing method of display device substrate, display device, and manufacturing method of display device
KR20070077681A (ko) 박막 트랜지스터, 액정 표시 장치 및 이의 제조 방법
KR20050082549A (ko) 횡전계방식 액정표시장치 및 이의 제조방법
KR20020032088A (ko) 고 개구율을 갖는 액정 디스플레이 패널 및 그 제조 방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: LG.PHILIPS LCD CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KIM, DONG-GUK;REEL/FRAME:016717/0904

Effective date: 20050616

AS Assignment

Owner name: LG DISPLAY CO., LTD., KOREA, REPUBLIC OF

Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021754/0045

Effective date: 20080304

Owner name: LG DISPLAY CO., LTD.,KOREA, REPUBLIC OF

Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021754/0045

Effective date: 20080304

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12