US7528176B2 - Carbonyl-functionalized thiophene compounds and related device structures - Google Patents

Carbonyl-functionalized thiophene compounds and related device structures Download PDF

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US7528176B2
US7528176B2 US11/227,559 US22755905A US7528176B2 US 7528176 B2 US7528176 B2 US 7528176B2 US 22755905 A US22755905 A US 22755905A US 7528176 B2 US7528176 B2 US 7528176B2
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Tobin J. Marks
Antonio Facchetti
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    • C07—ORGANIC CHEMISTRY
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    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/22—Radicals substituted by doubly bound hetero atoms, or by two hetero atoms other than halogen singly bound to the same carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • FET field-effect transistor
  • the simplest and most common OFET device configuration is that of a thin-film transistor (TFT), in which a thin film of the organic semiconductor is deposited on top of a dielectric with an underlying gate (G) electrode.
  • TFT thin-film transistor
  • G gate
  • D-S charge-injecting drain-source
  • the OFETs operate in p-type accumulation mode, meaning that the semiconductor acts as a hole-transporting material.
  • the semiconductor acts as a hole-transporting material.
  • high-performing electron-transporting (n-type) materials are needed as well.
  • the mobility of the field-induced charges should be about 0.1-1 cm 2 /Vs or greater.
  • the organic semiconductors should satisfy stringent criteria relating to both the injection and current-carrying phenomena, in particular: (i) the HOMO/LUMO energies of the individual molecules (perturbed by their placement in a crystalline solid) should be at levels where holes/electrons may be added at accessible applied voltages; (ii) the crystal structure of the material should provide sufficient overlap of the frontier orbitals ( ⁇ stacking and edge-to-face contacts) to allow charge to migrate among neighboring molecules; (iii) the compound should be highly pure since impurities act as charge carrier traps; (iv) the molecules (in particular the conjugated core axes) should be preferentially oriented with their long axes close to the FET substrate normal, as the most efficient charge transport occurs along the direction of intermolecular ⁇ - ⁇ stacking; and (v) the domains of the crystalline semiconductor should cover uniformly the area between source and drain contacts, hence the film should have a single crystal-like morphology.
  • fluoroalkyl functionalization of the nT core significantly alters the electronic, film growth, and semiconducting properties of the resulting films, and that a TFT device with these system as active layer operates in the n-type accumulation mode, indicating facile electron injection into the semiconducting material.
  • film growth morphologies were shown to strongly depend on growth temperature and substrate functionalization.
  • the field effect mobilities measured in the saturated regime (V d >V g ) approach ⁇ 0.3 cm 2 /Vs, the highest reported so far for organic n-type semiconductors. See, U.S. Pat. No. 6,585,914 incorporated herein by reference in its entirety.
  • fluorocarbon substituents limit subsequent structural modification and, in certain environments, present concerns regarding chemical stability.
  • FIG. 1 Schematic diagram of a thin film field effect transistor geometry, known in the art.
  • FIGS. 2A-D UV-vis/PL spectra of Ia (DFHCO-4T) and Ib (DHCO-4T).
  • FIG. 3 FET current-voltage characteristics of Ia and Ib under different positive gate-source biases (e.g., OV, 80V and 100V).
  • FIGS. 4A-B UV-vis/Photoluminescence (PL) spectra of DHCO-4T, DFHCO-4T and DFHCO-4TCO.
  • FIG. 5 Schematic diagram of an OFET device, with non-limiting semiconductor compound(s), in accordance with this invention.
  • FIGS. 6A-D I DS -V plots for: A. DHCO-4T (n-type, vacuum). B. DHCO-4T (p-type). C. DFHCO-4T in vacuum (black) and air (gray). D. DFHCO-4TCO transfer plots in vacuum (black) and air (light) at different drain-source/gate biases.
  • FIG. 7 Electron ⁇ e and hole ⁇ h mobilities vs. film deposition temperature (T D ) for DHCO-4T ( ⁇ ), DFHCO-4T (*), and DFHCO-4TCO ( ⁇ ) in vacuum.
  • T D film deposition temperature
  • ⁇ e for DFHCO-4T is after I 2 vapor treatment.
  • FIG. 8 Illustrations of crystal structure and packing of a dioxolane-protected quaterthiophene.
  • FIG. 9 UV-vis spectra of DFHCO-4TCO and 10 films and that of film 10 after H 2 O—HCl vapor treatment and annealing.
  • FIGS. 10A-D With reference to examples 13a-13e, crystal structures of 1 (A) and 2 (B) viewed perpendicular to the long axis of the unit cell (hydrogen atoms not shown). Note the remarkably similar herringbone packing motif in 1 (C) and 2 (D) viewed along the long crystallographic axis.
  • FIGS. 11A-B Thin film x-ray diffraction patterns of 1 (A) and 2 (B) films vacuum deposited at indicated temperatures onto HMDS treated SiO 2 (300 nm)/Si(100) substrates. All data beyond 2 ⁇ of 6.4° (dotted line) are expanded by a factor of 10 for clarity. Peaks are assigned from the powder pattern calculated from the single c crystal structures using the program Mercury version 1.3.
  • FIGS. 14A-B Output (A) and transfer (B) plots of an OFET fabricated with 1 solution cast at 120° C.
  • FIGS. 16A-B Optimized DFT (Q-Chem 2.0 ⁇ /DFT/B3LYP/6-31G*) geometies of 1 ( a ) and 2 ( b ) viewed above the plane of the thiophene core (top) and in the thiophene core plane (bottom).
  • this invention can comprise compounds represented by structural formulas I-V, as shown below.
  • R 1 , R 2 and R 3 can be independently selected from H, alkyl, fluorosubstituted alkyl, aryl, heterocyclic and fluorosubstituted aryl moieties, said alkyl and fluorosubstituted alkyl moieties ranging from about C 2 to about C 10 ; each said x can be an integer independently ranging from about 0 to about 8; and z can be an integer selected from 0 and integers greater than 0, where at least one of x, y an z can be selected from 2 and integers greater than 2;
  • R 1 can be selected from H, alkyl, fluorosubstituted heterocyclic alkyl, aryl and fluorosubstituted aryl moieties, said alkyl and fluorosubstituted alkyl moieties ranging from about C 2 to about C 10 ; each said x can be an integer independently ranging from 0 to about 4; y and y′ can be integers independently selected from 1 and integers greater than 1; z can be an integer selected from 0 and integers greater than 0; each said v can be an integer independently selected from 1 and 2; and each said w can be an integer independently selected from 0 and 1, wherein at least one of said x and z can be 1, at least one of y and y′ is 1, and at least one of said v and said w is 1; and where v can be 2
  • R 1 can be fluoro-substitutedphenyl
  • oligothiophene I Two representative non-limiting examples of oligothiophene I are shown below: The diperfluorohexyl carbonyl (DFHCO) and dihexyl carbonyl (DHCO) substituted quaterthiophene (4T) compounds Ia and Ib, respectively.
  • DHFCO diperfluorohexyl carbonyl
  • DHCO dihexyl carbonyl
  • oligothiophene compounds of this invention can be represented by structural formula V, below, where variables corresponding structures I-IV are as described above and Ar can be selected from a y and/or y′ number of the aryl and fused aryl (e.g., phenyl and/or thiophenyl) moieties shown in structures II-IV.
  • Ar can be selected from a y and/or y′ number of the aryl and fused aryl (e.g., phenyl and/or thiophenyl) moieties shown in structures II-IV.
  • R 1 , R 2 and R 3 can be independently selected from H, alkyl, fluorosubstituted alkyl, aryl heterocyclic, and fluorosubstituted aryl moieties, said alkyl and fluorosubstituted alkyl moieties ranging from about C 2 to about C 10 ; each said Ar can be an aryl moiety independently selected from phenyl, perfluorophenyl, diacylphenyl, diacylperfluorophenyl, and thiophenyl moieties; each said x can be an integer independently selected from 0 to about 4; y and y′ can be integers independently selected from 0 to about 4; z can be an integer selected from 0 to about 8; and a can be an integer ranging from 0 to about 4, wherein at least one of said x, z and a is selected from 2 and integers greater than 2; and each said w is an integer selected from 0 and 1; and further, R 2
  • each of x can be 2, R 1 and R 2 can be H, y can be 1, y′, z, w and a can be 0, and Ar can be diacylperfluorophenyl.
  • a corresponding polymer of such a compound can be of a formula
  • the 3- and/or 4-positions of one or more thiophenyl moieties can be substituted with alkyl, fluorosubstituted alkyl, and/or fluorosubstituted alkylcarbonyl moieties, such moieties as described above.
  • the diacyl moiety can, in the alternative, be phenyl or substituted at one or more positions with one or more other halogen moieties.
  • Such compounds can be used as described below, alone or in combination with one or more other compounds of this invention, in the fabrication of OFET devices—including those comprising semiconductor components comprising one or more of the inventive compounds exhibiting hole mobility, electron mobility, or both under operating conditions.
  • the present invention relates to novel classes of thiophene-based materials substituted with one or more carbonyl moieties on the periphery, on the terminal or lateral positions, and at positions along the oligo/polythiophene backbone.
  • the choice of any carbonyl moiety of the sort described herein, or understood by those skilled in the art made aware of this invention can be considered for any one of the following reasons: 1) it is one of the strongest electron-withdrawing groups (EWG), 2) in contrast to e.g., CN and NO 2 groups, such a moiety allows additional synthetic modifications/functionalization, 3) it can be part of the ⁇ -conjugated core, and 4) it prevents ⁇ -elimination of fluorine atoms when positioned in between a fluoroalkyl chain and a carbanion site.
  • EWG electron-withdrawing groups
  • the compounds of this invention have been characterized by a combination of techniques including thermal analysis (DSC, TGA), molecular spectroscopy (NMR, UV-Vis, PL), and electrochemistry (CV, DPP). Results confirm that all the thiophene-carbonyl modified systems are more chemically and thermally stable than the corresponding ⁇ -isoelectronic olgothiophenes and are highly volatile and soluble in common organic solvents.
  • FIG. 2 shows optical spectrum of THF solution and vacuum-deposited films.
  • Table 1 summarizes for purposes of comparison and illustration, the electrochemical data of compounds Ia and Ib to that for the corresponding non-carbonyl compounds of the prior art, DFH-4T and DH-4T.
  • the reduction potential values decease of about 0.7-0.9 V. Reversible oxidation potentials were not observed for the carbonyl series, possibly but without limitation because of the low caution stability.
  • absolute orbital energies can be estimated.
  • LUMO energies can be determined from the first reduction potentials and HOMO energies considering the optical gap.
  • modification of an all-thiophene framework by introduction of powerful carbonyl-containing electron-withdrawing groups was found to decrease MO energy levels, allowing for an easier electron injection.
  • substitution on the morphology of corresponding thin films and single crystals of several compounds was examined by X-ray crystallography.
  • deposition method evaporation, spin-coating, casing
  • substrate temperature and pretreatment either highly ordered or amorphous solids can be produced and incorporated into various semi-conductor components and related device structures.
  • the LUMO fully extends to the C ⁇ O groups via S thiophene ⁇ C ⁇ O intramolecular charge transfer, enhancing substituent ⁇ / ⁇ -EWD effects. Therefore, greater perturbation of the 1-3 LUMOs is expected, in excellent agreement with the present electrochemical and optical data.
  • Such carbonyl-substituted oligothiophenes are thermally stable and undergo quantitative sublimation.
  • Thin films are readily grown from the vapor phase under vacuum and have been characterized by XRD (revealing molecular edge-on-substrate growth orientation), scanning electron microscopy, and FET I-V measurements.
  • Top-contact FET devices were fabricated as described in the literature and elsewhere herein. Briefly, with respect to examples 10a-10i and 11, semiconductors 1-3 ( ⁇ 50 nm) were vapor-deposited on HMDS-treated p-doped Si/SiO 2 substrates maintained at temperatures (T D ) between 25-90° C. OFET fabrication was completed by vapor-depositing source-drain Au contacts ( ⁇ 50 nm). (See, schematically, FIG. 5 .) Measurements were performed in air and vacuum ( ⁇ 10 ⁇ 5 Torr), and the standard saturation FET equation (Eq. 1, below) employed to calculate carrier mobilities.
  • FIG. 6 shows typical drain-source current-voltage plots for 1-3-based OFETs under different conditions. All of the new oligothiophenes exhibit very high electron mobilities ( ⁇ e ) in vacuum, with average values as a function of deposition temperature (T D ) shown in FIG. 7 . For some devices ⁇ e as high as ⁇ 0.65 cm 2 V ⁇ 1 s ⁇ 1 has been measured. Interestingly, DHCO-4T films also exhibit relatively large hole (i.e., p-type) mobilities ( ⁇ h up to 0.01 cm 2 V ⁇ 1 s ⁇ 1 ) at all deposition temperatures.
  • p-type mobilities ⁇ h up to 0.01 cm 2 V ⁇ 1 s ⁇ 1
  • DHCO-4T is the first organic conductor exhibiting unoptimized ⁇ e / ⁇ h values as high as ⁇ 0.1/0.01 cm 2 V ⁇ 1 s ⁇ 1 .
  • DFHCO-4T also exhibits ambipolar behavior but only after I 2 vapor treatment. More electron-deficient DFHCO-4T and DFHCO-4TCO are air-stable with ⁇ e 's exhibiting the same T D dependence as in vacuum but with ⁇ 5/10 ⁇ lower magnitudes.
  • DFHCO-4TCO-based devices can be cycled many times in air without obvious degradation. From the transfer plots, very high I on :I off ratios are observed for electrons, >10 7 . Maximum current gains for holes is >10 8 for DHCO-4T.
  • the sub-threshold swings (S), indicating how sharply the devices turn on, are in the 1.3-4.9 V/decade range and turn-on voltages
  • the present invention provides a new class of soluble oligothiophenes having high electron/hole mobilities both in solution-cast (e.g., ⁇ e ⁇ 0.25 cm 2 V ⁇ 1 s ⁇ 1 ) and vapor-deposited (e.g., ⁇ e ⁇ 0.5 cm 2 V ⁇ 1 s ⁇ 1 ) films with very high current modulation (e.g., I on :I off >10 5 and 10 8 , respectively).
  • I on :I off >10 5 and 10 8 respectively.
  • the structure and energetics of these molecular motifs can also be used as models for the synthesis/characteristics of other n-type polythiophenes, in accordance with this invention.
  • quaterthiophenes 1 and 2 and polythiophene 3, therein, were synthesized according to Scheme 4 and characterized by conventional chemical and physical methods. Crystals of 1 and 2 suitable for X-ray diffraction were obtained by sublimation. They both crystallize in a herringbone motif ( FIG. 10 ), with the shortest inter-core distance being 3.50 ⁇ (C14-C15) and 3.43 ⁇ (C14-C16), respectively. The average dihedral angle between the phenyl substitutent and the adjacent thiophene subunit is ⁇ 53° in 1 and ⁇ 49° in 2.
  • the quaterthiophene core of 2 is more planar than that of 1 with a maximum inter-thiophene torsional angle of ⁇ 4° versus ⁇ 13° in 1.
  • the 1 carbonyl groups lie ⁇ 6° out of the plane of the adjacent thiophene ring while in 2 this angle increases considerably to ⁇ 17°.
  • Both semiconductors are thermally stable and undergo quantative sublimation at reduced pressure as indicated by differential scanning calorimetry and thermogravimetric analysis.
  • Films can be grown from the vapor phase and by solution casting from common solvents such as thiophene, toluene, and xylenes.
  • Wide angle x-ray diffraction indicates that vapor-deposited films are highly crystalline, having the same phase observed in the crystal structure ( FIG. 11 ).
  • the progression of Bragg reflections corresponds to a d-spacing of 27.62 ⁇ (1) and 26.87 ⁇ (2). These spacings are consistent with half of the unit cell long axis (shown in FIG.
  • field effect transistors of 1, 2, and 3 were fabricated with Au top-contact electrodes.
  • Semiconductor films 50 nm were deposited onto temperature controlled HMDS-treated SiO 2 /p + —Si substrates by vapor deposition and drop casting.
  • a 50 nm layer of Au was then deposited through a shadow mask to define the source and drain electrodes. (See example 14.)
  • OFET characterization was preformed in a high vacuum probe station back-filled with Argon.
  • polymer 3 (scheme 4, example 13e) is found to have good solubility in common solvents and forms high-quality films when spun cast from xylenes.
  • 3 undergoes a reversible two electron reduction at ⁇ 1.23 V plus an additional irreversible reduction at ⁇ 1.60 V and three single electron oxidations at +0.96/+1.13 V (reversible) and +1.40 V.
  • spin cast films of the neat polymer exhibit ⁇ e ⁇ 10 ⁇ 6 cm 2 V ⁇ 1 s ⁇ 1 (optimization in progress)
  • an initial study revealed that blends of 1 and 3 (500-1000 ppm, 1:1 wt.
  • 2-Thiophenylaldehyde and 2-bromothiophene are commercially available.
  • the reagent 5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene was prepared according to the known procedure (Wei, Y.; Yang, Y.; Yeh, J,-M. Chem. Mater. 1996, 8, 2659).
  • compounds 1-4 are prepared as described below, enroute to the diperfluorohexyl and dihexyl compounds, DFHCO-4T and DHCO-4T, respectively.
  • oligothiophene compounds of structures I-IV and/or V can be prepared using synthetic techniques of the sort described in the aforementioned incorporated '914 patent or straight-forward modifications thereof, depending upon choice of reagent or thiophene core, as would be understood by those skilled in the art made aware of this invention.
  • Field effect transistor devices were fabricated for compounds of the preceding examples using a top-contact configuration. These semiconductors were vacuum-deposited on top of HMDS-treated Si/SiO 2 substrates kept at the temperature (T D ) of 25 and 70° C. To show the precision of each measurement, the reported data are an average of at least three devices tested at different area of the semiconductor layer. The electrical measurements were performed under vacuum ( ⁇ 10 ⁇ 4 Torr).
  • FIG. 3 shows typical drain-source current/voltage plots of compounds Ia and Ib operating at different gate bias. For the purposes of comparison with other organic FETs, the mobilities were calculated by standard field effect transistor equations.
  • I DS sat ( WC i /2 L ) ⁇ ( V G ⁇ V t ) 2 (1)
  • L and W are the device channel length and width, respectively
  • C i is the capacitance of the insulator (1 ⁇ 10 ⁇ 8 F/cm 2 for 300 nm SiO 2 ).
  • FIG. 3 shows I-V electrical characteristics of Ia and Ib. From these data n-type mobilities approaching 0.5 cm 2 /Vs, current on/off ratio of 10 6 -10 7 , and Vt of ⁇ 20V were obtained. Furthermore, devices of Ib exhibit ambipolar characteristics, meaning that a channel of both electrons and holes can be induced upon applying a positive and negative bias to the gate-source contacts, respectively.
  • the reagent 2-thiophenylaldehyde and 2-bromothiophene are commercially available.
  • the reagent 5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene was prepared according to the known procedure (Wei, Y.; Yang, Y.; Yeh, J.-M. Chem. Mater. 1996, 8, 2659).
  • Compound 8 was prepared following a known procedure (Brzezinski, J. Z.; Reynolds, J. R. Synthesis 2002, 8, 1053, respectively).
  • n-doped silicon wafers 100 having 300 nm thermally grown oxide (Process Specialties Inc.) were used as device substrates. They were rinsed with water, methanol, and acetone before film deposition. Trimethylsilyl functionalization of the Si/SiO 2 surface was carried out by exposing the silicon wafers to hexamethyldisilazane (HMDS) vapor at room temperature in a closed container under nitrogen overnight.
  • HMDS hexamethyldisilazane
  • Organic compounds were deposited by either vacuum evaporation (pressures ⁇ 10 ⁇ 5 Torr) at a growth rate of 0.2-0.3 ⁇ s ⁇ 1 , or by casting films from THF solutions (concentrations 200-400 ppm, 10 ⁇ 4 -10 ⁇ 2 M). Evaporated films were 500 ⁇ thick (as determined by a calibrated in situ quartz crystal monitor), and solution-cast films were variable and thicker, on the order of microns. For solution depositions, a region of the substrate surface ( ⁇ 1-2 cm 2 ) was defined using 3M NovecTM EGC-1700 electronic coating (comparable to the previously used 3M FC-722 product) before casting.
  • top-contact electrodes 500 ⁇ were deposited by evaporating gold (pressure ⁇ 10 ⁇ 5 Torr); channel dimensions were 50/100 ⁇ m (L) by 5.0 mm (W).
  • the capacitance of the insulator is 2 ⁇ 10 ⁇ 8 F/cm 2 for 300 nm SiO 2 .
  • TFT device measurements were carried out in a customized vacuum probe station (8 ⁇ 10 ⁇ 5 Torr) or in air. Coaxial and/or triaxial shielding was incorporated into Signaton probe stations to minimize the noise level. TFT characterization was performed with a Keithly 6430 subfemtoammeter and a Keithly 2400 source meter, operated by a locally written Labview program and GPIB communication.
  • Thin films were analyzed by X-ray film diffractometry (XRD), using standard ⁇ -2 ⁇ techniques, with Cu K ⁇ radiation and a monochromator. All ⁇ -2 ⁇ scans were calibrated in situ with the reflection of the Si (100) substrates. Films were coated with 3 nm of sputtered Au before analysis by scanning electron microscopy (SEM) using a Hitachi S4500 FE microscope.
  • XRD X-ray film diffractometry
  • reaction mixture was heated to 80° C. for 10 h with stirring. A red-brown precipitate formed and upon cooling was collected by filtration, washed with hexanes (3 ⁇ 10 mL) and methanol (3 ⁇ 10 mL). Gradient sublimation (2 ⁇ ) afforded a bright orange crystalline material (0.305 g, 60%) with some crystals suitable for x-ray diffraction.
  • P(COFCO-4T) (3) A mixture of 4,4′-dioctyl-5,5′-bis(tributylstannyl)-2,2′-dithiophene (0.969 g, 1.00 mmol), 1,4-bis((5-bromothien-2-yl)carbonyl)-2,3,5,6-tetrafluorobenzene (0.530 g, 1.00 mmol), and tetrakis(triphenylphosphine)palladium(0) (34.7 mg, 0.0300 mmol, 0.03 equiv.) was degassed with nitrogen three times before 10 mL anhydrous DMF was added. The reaction mixture was then heated to 110° C.
  • This material has a M w of 15,300 and M n of 6100 by HT-GPC (140° C., trichlorobenzene, calibrated vs. polystyrene).
  • 1 H NMR (CDCl 3 ) ⁇ 7.51 (m, 2H), 7.13 (s, 1H); 19 F NMR (CDCl 3 ): ⁇ ⁇ 138.97 (s), ⁇ 139.03 (s); 119 Sn NMR ⁇ ⁇ 4.2 (s); Anal. Calcd for C 40 H 40 F 4 O 2 S 4 : C 63.46, H 5.33. Found: C 63.20, H 5.44.
  • Organic compounds were deposited by either vacuum evaporation (pressures ⁇ 10 ⁇ 5 Torr) at a growth rate of 0.2-0.3 ⁇ s ⁇ 1 , or by drop casting films from xylenes solutions (concentrations 200-1000 ppm).
  • Polymer films were spin cast from xylenes or drop cast from a xylenes/triethylamine mixture (7:3 v/v), before being annealed under high vacuum for 1 h at 100° C. Films of polymer and molecule blends were cast from xylenes before annealing under the same conditions.
  • Evaporated films were 500 ⁇ thick (as determined by a calibrated in situ quartz crystal monitor), and solution-cast films were variable and thicker, on the order of microns.
  • top-contact electrodes 500 ⁇ were deposited by evaporating gold (pressure ⁇ 10 ⁇ 5 Torr); channel dimensions were 50/100 ⁇ m (L) by 5.0 mm (W).
  • the capacitance of the insulator is 2 ⁇ 10 ⁇ 8 F/cm 2 for 300 nm SiO 2 .
  • TFT device measurements were carried out in a customized vacuum probe station pumped down to (8 ⁇ 10 ⁇ 6 Torr) before being backfilled with Argon or in air.
  • Coaxial and/or triaxial shielding was incorporated into Signatone probe stations to minimize the noise level.
  • TFT characterization was performed with a Keithly 6430 sub-femtoamp meter and a Keithly 2400 source meter, operated by a locally written Labview program and GPIB communication.
  • Thin films were analyzed by wide-angle X-ray film diffractometry (WAXRD) on a Rikagu ATX-G using standard ⁇ -2 ⁇ techniques, with Cu K ⁇ radiation and a monochromator. All ⁇ -2 ⁇ scans were calibrated in situ with the reflection of the Si (100) substrates.
  • WAXRD wide-angle X-ray film diffractometry

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